TW201736798A - Film thickness measurement device for optical thin film having extremely high precision in static detection and dynamic detection and directly used on the production line - Google Patents

Film thickness measurement device for optical thin film having extremely high precision in static detection and dynamic detection and directly used on the production line Download PDF

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TW201736798A
TW201736798A TW105111234A TW105111234A TW201736798A TW 201736798 A TW201736798 A TW 201736798A TW 105111234 A TW105111234 A TW 105111234A TW 105111234 A TW105111234 A TW 105111234A TW 201736798 A TW201736798 A TW 201736798A
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light
optical film
film
optical
light source
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TW105111234A
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林克默
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南臺科技大學
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Abstract

A film thickness measurement device for an optical thin film includes a carrier, a light source, a condenser lens, and a spectrometer. The carrier is used to carry an optical thin film, and has a light incident port and a light exit port located at two opposite sides of the optical thin film and oppositely spaced from each other. The light source is located at one side of the light incident port of the carrier. The condenser lens is located between the light source and the optical thin film for condensing light beam of the light source and emitting it to the optical thin film. The spectrometer is located at one side of the light exit port for detecting a light signal passing through the optical thin film. The spectrometer can absorb a light signal with a wavelength of 200 nm ~ 850 nm. The present invention is a penetrative measurement device, which is not easily affected by a shock in the surrounding environment and has extremely high precision in static detection and dynamic detection. Therefore, the present invention can directly perform on-line detection on the production line.

Description

光學薄膜之膜厚量測裝置Film thickness measuring device for optical film

本發明是有關於一種薄膜之膜厚量測裝置,特別是指一種用於測量透明導電氧化物薄膜之厚度的量測裝置。The present invention relates to a film thickness measuring device for a film, and more particularly to a measuring device for measuring the thickness of a transparent conductive oxide film.

透明導電薄膜廣泛應用於光電、半導體、生醫等領域,其應用產品包含有手機、平板電腦、顯示器、發光二極體、太陽能電池等等。而透明導電薄膜的透光度、導電性、膜層均勻度對於產品性能有重大影響,因此於薄膜形成後,必須針對上述特性進行研究分析,其中,膜層厚度也是要檢測的項目之一。Transparent conductive films are widely used in optoelectronics, semiconductors, biomedical and other fields, and their applications include mobile phones, tablets, displays, light-emitting diodes, solar cells, and so on. The transparency, conductivity, and uniformity of the transparent conductive film have a great influence on the performance of the product. Therefore, after the film is formed, it is necessary to conduct research and analysis on the above characteristics, and the film thickness is also one of the items to be tested.

已知用於檢測透明導電薄膜之膜厚裝置或方式,例如台灣專利第428079號專利案,是利用光干涉法並且量測反射光強度,以換算得到薄膜厚度。台灣專利第201420993 號專利,也是利用光干涉法,可測得薄膜元件的待測面表面輪廓或厚度資訊。另外還有使用X 光、雷射超音波等方式檢測膜厚,對於金屬薄膜還可以利用檢測渦電流的變化來量得膜厚。但無論是上述哪一種測量裝置與方法,都必須於穩定、薄膜不動的情況下進行靜態檢測,因為其中有許多是透過光的干涉來進行檢測,若是有任何震動,對於檢測精度影響較大,如此造成上述檢測裝置無法運用於生產線或會震動的機台上。A film thickness device or a method for detecting a transparent conductive film is known. For example, in the patent of Taiwan Patent No. 428079, the intensity of the reflected light is measured by an optical interference method to obtain a film thickness. Taiwan Patent No. 201420993 also uses optical interference method to measure the surface profile or thickness information of the surface of the film to be tested. In addition, X-rays, laser ultrasonic waves, and the like are used to detect the film thickness, and for the metal film, the film thickness can be measured by detecting the change of the eddy current. However, no matter which of the above measuring devices and methods, it is necessary to perform static detection under stable conditions without moving the film, because many of them are detected by interference of light, and if there is any vibration, the influence on the detection accuracy is large. As a result, the above detection device cannot be applied to a production line or a machine that can vibrate.

因此,本發明之目的,即在提供一種適用於靜態與動態檢測,檢測精確度高的光學薄膜之膜厚量測裝置。Accordingly, it is an object of the present invention to provide a film thickness measuring device suitable for static and dynamic detection, which has an optical film having high detection accuracy.

於是,本發明光學薄膜之膜厚量測裝置,用於量測一光學薄膜的厚度,並包含一載台、一光源、一聚光透鏡,及一光譜儀。該載台用於承載該光學薄膜,並具有位於該光學薄膜的兩相反側且間隔相對的一入光口與一出光口。該光源位於該載台的該入光口一側。該聚光透鏡位於該光源與該光學薄膜之間,用於將該光源的光線聚光後再射向該光學薄膜。該光譜儀位於該載台的該出光口一側,用於檢測通過該光學薄膜而來的光訊號,該光譜儀能吸收波長為200 nm ~850nm的光訊號。Thus, the film thickness measuring device of the optical film of the present invention is used for measuring the thickness of an optical film, and comprises a stage, a light source, a collecting lens, and a spectrometer. The stage is configured to carry the optical film, and has an optical entrance and a light exit opening on opposite sides of the optical film and opposite to each other. The light source is located on the side of the light entrance of the stage. The concentrating lens is located between the light source and the optical film, and is used for concentrating the light of the light source and then illuminating the optical film. The spectrometer is located on the side of the light exit of the stage for detecting an optical signal passing through the optical film, and the spectrometer can absorb optical signals having a wavelength of 200 nm to 850 nm.

本發明之功效在於:藉由該入光口與該出光口位於該光學薄膜的兩相反側,該光譜儀可偵測通過該光學薄膜而來的光線,此為一種穿透式的測量裝置,較不易受周遭環境震動影響,於靜態檢測與動態檢測都具有極高的精確度,故可於生產線上直接進行線上檢測。而且該聚光透鏡的聚光效果,可提升該光源光線的準直性,以及提升光線進入該光學薄膜的入光量,有助於該光學薄膜吸收與提升檢測精確度。該光譜儀可針對特定波段進行光譜訊號分析,亦有助於提升檢測精確度。The effect of the invention is that the spectrometer can detect the light passing through the optical film by the optical entrance and the light exit opening on opposite sides of the optical film, which is a transmissive measuring device. It is not easy to be affected by the surrounding environmental vibration. It has high precision in both static and dynamic detection, so it can be directly tested on the production line. Moreover, the concentrating effect of the concentrating lens can improve the collimation of the light of the light source and enhance the amount of light entering the optical film, which contributes to the absorption and lifting detection accuracy of the optical film. The spectrometer can perform spectral signal analysis for specific bands and also helps improve detection accuracy.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

參閱圖1與圖2,本發明光學薄膜之膜厚量測裝置之一第一實施例,用於量測一光學薄膜1的厚度,本實施例的光學薄膜1為一個能吸收紫外光的透明導電氧化物薄膜。該膜厚量測裝置包含:一載台2、一光源3、一聚光透鏡4、一濾鏡5,以及一光譜儀6。Referring to FIG. 1 and FIG. 2, a first embodiment of a film thickness measuring device for an optical film of the present invention is used for measuring the thickness of an optical film 1. The optical film 1 of the present embodiment is transparent to absorb ultraviolet light. Conductive oxide film. The film thickness measuring device comprises: a stage 2, a light source 3, a collecting lens 4, a filter 5, and a spectrometer 6.

該載台2用於承載該光學薄膜1,並包括上下間隔相對的一個安裝部21與一個基部22、一位於該基部22與該安裝部21之間的架部23,以及一由下往上延伸並連接於該基部22、該安裝部21與該架部23一側的連接部24。該安裝部21具有一自其頂面朝其底面延伸貫穿的入光口211。該基部22具有一供該光學薄膜1擺放的基壁221,以及二自該基壁221的相對兩側朝下延伸並與該基壁221共同界定一容置空間220的側壁222。該基壁221具有一自其頂面朝其底面延伸貫穿且連通該容置空間220的出光口223。該入光口211與該出光口223位於該光學薄膜1的兩相反側且上下間隔相對。The stage 2 is configured to carry the optical film 1 and includes a mounting portion 21 and a base portion 22 spaced apart from each other, a frame portion 23 between the base portion 22 and the mounting portion 21, and a bottom portion The base portion 22, the connecting portion 21 and the connecting portion 24 on the side of the frame portion 23 are extended and connected. The mounting portion 21 has a light entrance opening 211 extending from a top surface thereof toward a bottom surface thereof. The base portion 22 has a base wall 221 for the optical film 1 to be placed, and two side walls 222 extending downward from opposite sides of the base wall 221 and defining an accommodation space 220 together with the base wall 221. The base wall 221 has a light exit opening 223 extending from the top surface thereof toward the bottom surface thereof and communicating with the receiving space 220. The light entrance 211 and the light exit opening 223 are located on opposite sides of the optical film 1 and are spaced apart from each other.

該光源3位於該載台2的該入光口211一側,該光源3的光線可以經由該入光口211射向該光學薄膜1。該光源3例如鹵素燈。The light source 3 is located on the side of the light entrance 211 of the stage 2, and the light of the light source 3 can be directed to the optical film 1 via the light entrance 211. The light source 3 is, for example, a halogen lamp.

該聚光透鏡4位於該光源3與光學薄膜1之間,用於將該光源3的光線聚光後再射向該光學薄膜1。在本實施例中,該聚光透鏡4為一個具有聚光功能的凸透鏡,並且安裝在該載台2的該架部23。The condensing lens 4 is located between the light source 3 and the optical film 1 and is used to condense the light of the light source 3 and then illuminate the optical film 1. In the present embodiment, the condensing lens 4 is a convex lens having a condensing function and is mounted on the frame portion 23 of the stage 2.

該濾鏡5位於該聚光透鏡4與該光源3之間,可以利用螺鎖的方式固定於該載台2的該安裝部21底面,並且位於該入光口211下方。本實施例的濾鏡5可用於濾除波長為200nm~400nm以外的光線。The filter 5 is located between the condensing lens 4 and the light source 3, and is fixed to the bottom surface of the mounting portion 21 of the stage 2 by a screw lock, and is located below the light entrance 211. The filter 5 of the present embodiment can be used to filter out light having a wavelength other than 200 nm to 400 nm.

該光譜儀6設置於該載台2的該容置空間220,並位於該載台2的該出光口223一側,用於檢測通過該光學薄膜1而來的光訊號。該光譜儀6能吸收波長為200 nm ~850nm的光訊號。本實施例所運用的檢測原理為,該光學薄膜1是一個能吸收紫外光的薄膜,但並非整個紫外光波段都會完全吸收,而是對於不同波長的紫外光會有不同的吸收效果,而且隨著薄膜厚度不同,該光學薄膜1吸收紫外光的效果也不同。因此,藉由該光譜儀分析光線通過該光學薄膜1後的穿透光譜,再經由後端的一計算模組(例如一台電腦)計算、比對與分析後,可得到該光學薄膜1的厚度。進一步地,本實施例的光學薄膜1例如ITO透明導電膜,該光譜儀6可以取波長為320 nm ~400nm的光訊號來分析得到該光學薄膜1的厚度。補充說明的是,若是要測量的光學薄膜1,為一種能遮擋過濾紅外線的節能膜,此時該光譜儀6則可以取750 nm ~850nm的光訊號來分析該節能膜的膜厚。也就是說,該光譜儀6所要分析的波段範圍,可隨著不同種類的光學薄膜作調整。The spectrometer 6 is disposed in the accommodating space 220 of the stage 2 and is located on the side of the light exit port 223 of the stage 2 for detecting the optical signal passing through the optical film 1. The spectrometer 6 can absorb optical signals having a wavelength of 200 nm to 850 nm. The detection principle applied in this embodiment is that the optical film 1 is a film capable of absorbing ultraviolet light, but not the entire ultraviolet light band is completely absorbed, but different absorption effects for different wavelengths of ultraviolet light, and The thickness of the film is different, and the effect of the optical film 1 on absorbing ultraviolet light is also different. Therefore, the thickness of the optical film 1 can be obtained by analyzing the contrast spectrum of the light passing through the optical film 1 and calculating, comparing and analyzing it through a computing module (for example, a computer) at the back end. Further, the optical film 1 of the present embodiment is, for example, an ITO transparent conductive film, and the spectrometer 6 can analyze the thickness of the optical film 1 by taking an optical signal having a wavelength of 320 nm to 400 nm. It should be noted that if the optical film 1 to be measured is an energy-saving film capable of shielding infrared rays, the spectrometer 6 can take an optical signal of 750 nm to 850 nm to analyze the film thickness of the energy-saving film. That is to say, the range of wavelengths to be analyzed by the spectrometer 6 can be adjusted with different kinds of optical films.

本發明使用時,該光源3的光線通過該入光口211,並且由該濾鏡5過濾,保留特定波長的光線可通過,本實施例主要是將波長為200nm~400nm以外的光線過濾掉,使波長為200nm~400nm的光線可通過。通過該濾鏡5的光線再受到該聚光透鏡4聚光後,再射向該光學薄膜1。該光學薄膜1例如ITO透明導電膜,可利用真空鍍膜方式沈積於一玻璃基板上。該光學薄膜1具有吸收紫外光的特性,後續由該光譜儀6檢測該光學薄膜1的穿透光譜之光訊號,並由後端的工作電腦分析即可得到該光學薄膜1厚度。When the present invention is used, the light of the light source 3 passes through the light entrance port 211, and is filtered by the filter 5 to retain light of a specific wavelength. In this embodiment, the light having a wavelength of 200 nm to 400 nm is mainly filtered out. Light having a wavelength of 200 nm to 400 nm can be passed. The light passing through the filter 5 is further condensed by the condensing lens 4, and then incident on the optical film 1. The optical film 1, for example, an ITO transparent conductive film, can be deposited on a glass substrate by vacuum coating. The optical film 1 has the property of absorbing ultraviolet light, and the optical signal of the penetration spectrum of the optical film 1 is subsequently detected by the spectrometer 6, and the thickness of the optical film 1 is obtained by analysis of a working computer at the back end.

參閱圖1~3,圖3為光穿透率與膜厚的關係圖,此為事先求出該光學薄膜1的光穿透率與膜厚的相關性,以獲得膜厚與光穿透率的迴歸公式。圖3是以ITO薄膜為例,顯示本發明該光譜儀6採用兩種不同的光譜儀並取三種不同波段所作出的實驗,所述兩種光譜儀為紫外光/可見光分光光譜儀(UV-VIS光譜儀),以及微型光譜儀,所述三種波段分別為320~370nm,330~400nm,及350~380nm。由圖3的實驗結果可知,六個實驗所得到的膜厚對應於光穿透率的趨勢是一致的。也可驗證本發明該光譜儀6可以採用已知的各種光譜儀。Referring to FIGS. 1 to 3, FIG. 3 is a relationship between light transmittance and film thickness, which is obtained by correlating the light transmittance of the optical film 1 with the film thickness in advance to obtain film thickness and light transmittance. Regression formula. 3 is an example of an ITO film, showing the spectrometer 6 of the present invention using two different spectrometers and taking three different wavelength bands. The two spectrometers are ultraviolet/visible spectrophotometers (UV-VIS spectrometers). And the micro spectrometer, the three bands are 320~370nm, 330~400nm, and 350~380nm respectively. From the experimental results of FIG. 3, it is known that the film thickness obtained by the six experiments is consistent with the trend of light transmittance. It is also possible to verify that the spectrometer 6 of the present invention can employ various spectrometers known.

參閱圖1、2、4,更進一步地,本實施例利用濺鍍方式沈積形成數個不同膜厚之ITO薄膜,並分別測量膜厚。具體來說,主要是形成5個不同膜厚的ITO薄膜,各樣品的膜厚範圍約為75~115nm,可先利用多角度光譜式橢圓儀(Spectroscopic Ellipsometer, 簡稱SE)測定各光學薄膜1厚度,以獲得精確的薄膜厚度作為參考標準。接著再利用本發明之裝置進行靜態與動態的膜厚檢測。所述靜態膜厚檢測,是將該光學薄膜1靜止擺放於該載台2的該基部22上,再以本發明之裝置與原理進行膜厚量測,該5個樣品的量測誤差(絕對值平均)平均值為0.87nm,標準差為1.3nm。進行動態膜厚檢測時,主要是將本發明架設於一生產線的輸送帶(圖未示)一側,該光學薄膜1可受到該輸送帶傳送,該輸送帶與該光學薄膜1的高度位置介於該出光口223與該聚光透鏡4間,接著在該光學薄膜1傳輸通過本發明之裝置時,即進行膜厚檢測。參閱圖4,顯示利用本發明膜厚量測裝置進行動態膜厚檢測結果,以及利用光譜式橢圓儀(圖4中標示為「SE量測值」)量測膜厚的比較圖,動態檢測結果顯示該5個不同厚度樣品的量測誤差(絕對值平均)平均值為3.88nm,標準差為4.38nm。由此可知,本發明無論是靜態或動態的量測誤差皆小,量測結果具有高精確度。Referring to Figures 1, 2, and 4, further, in this embodiment, a plurality of ITO films of different film thicknesses are deposited by sputtering, and the film thicknesses are separately measured. Specifically, five ITO films of different film thicknesses are formed, and the film thickness of each sample is about 75 to 115 nm. The thickness of each optical film 1 can be measured by a Spectroscopic Ellipsometer (SE). To obtain accurate film thickness as a reference standard. The device of the present invention is then used for static and dynamic film thickness detection. The static film thickness detection is that the optical film 1 is statically placed on the base portion 22 of the stage 2, and then the film thickness measurement is performed by the apparatus and principle of the present invention, and the measurement errors of the five samples are The average of the absolute values was 0.87 nm with a standard deviation of 1.3 nm. When performing dynamic film thickness detection, the present invention is mainly installed on the side of a conveyor belt (not shown) of a production line, and the optical film 1 can be conveyed by the conveyor belt, and the height position of the conveyor belt and the optical film 1 is introduced. Between the light exit opening 223 and the collecting lens 4, film thickness detection is performed when the optical film 1 is transported through the apparatus of the present invention. Referring to Fig. 4, the results of the dynamic film thickness measurement by the film thickness measuring device of the present invention and the comparison of the film thickness by the spectral ellipsometer (labeled "SE measurement value" in Fig. 4) are shown, and the dynamic detection result is shown. The average of the measurement errors (absolute value average) of the five different thickness samples was 3.88 nm, and the standard deviation was 4.38 nm. It can be seen that the measurement error of the invention is small or static, and the measurement result has high precision.

綜上所述,本發明用於量測光學薄膜1的膜厚,尤其是量測能吸收紫外線的光學薄膜1,藉由該光學薄膜1隨著厚度不同而有不同的吸收特性,故本發明於設計上,該入光口211與該出光口223,位於該光學薄膜1的兩相反側,使該光譜儀6可偵測通過該光學薄膜1而來的光線,此為一種穿透式的測量裝置,與一般採用干涉法測量的裝置及原理不同。而且穿透式的檢測方式較不易受周遭環境震動影響,由上述實驗結果也可知,本發明於靜態檢測與動態檢測都具有極高的精確度,故可於生產線上直接進行線上檢測。而且透過該聚光透鏡4的聚光效果,可提升該光源3光線的準直性,以及提升光線進入該光學薄膜1的入光量,有助於該光學薄膜1吸收,並能提升檢測精確度。該光譜儀6可針對特定波段進行光譜訊號分析,避免其他波段光的干擾、減少雜訊,亦有助於提升檢測精確度。更進一步地,該濾鏡5之設計,使得只有特定波段範圍的光能通過該濾鏡5而射向該光學薄膜1,可減少其他光源的干擾,有助於提升測量精準度。In summary, the present invention is for measuring the film thickness of the optical film 1, in particular, the optical film 1 capable of absorbing ultraviolet rays, and the optical film 1 has different absorption characteristics with different thicknesses, so the present invention The light-injecting port 211 and the light-emitting port 223 are located on opposite sides of the optical film 1 so that the spectrometer 6 can detect light passing through the optical film 1, which is a transmissive measurement. The device is different from the device and principle generally measured by interferometry. Moreover, the penetrating detection method is less susceptible to the surrounding environmental vibration. It is also known from the above experimental results that the present invention has extremely high precision in both static detection and dynamic detection, so that on-line detection can be directly performed on the production line. Moreover, the light collecting effect of the condensing lens 4 can improve the collimation of the light of the light source 3, and increase the amount of light entering the optical film 1, which helps the optical film 1 to absorb and improve the detection accuracy. . The spectrometer 6 can perform spectral signal analysis for a specific wavelength band, avoid interference of other wavelengths of light, reduce noise, and also improve detection accuracy. Further, the filter 5 is designed such that only light of a specific wavelength range is incident on the optical film 1 through the filter 5, which can reduce interference of other light sources and help to improve measurement accuracy.

參閱圖5,本發明光學薄膜之膜厚量測裝置之一第二實施例,與該第一實施例的結構大致相同,不同處在於:本實施例的膜厚量測裝置還包含一個位於該光源3與該入光口211間的第一光纖7,以及一位於該光譜儀6與該出光口223間的第二光纖8。該第一光纖7將該光源3的光線集中導引至該入光口211,使準直與高亮度光線通過該濾鏡5與該聚光透鏡4後射向該光學薄膜1。該第二光纖8將通過該光學薄膜1的光線,集中導引至該光譜儀6。Referring to FIG. 5, a second embodiment of the film thickness measuring device of the optical film of the present invention is substantially the same as the structure of the first embodiment, except that the film thickness measuring device of the embodiment further includes a A first optical fiber 7 between the light source 3 and the light entrance port 211, and a second optical fiber 8 between the spectrometer 6 and the light exit port 223. The first optical fiber 7 concentrates the light of the light source 3 to the light entrance 211, and passes the collimated and high-brightness light through the filter 5 and the condensing lens 4 to the optical film 1. The second optical fiber 8 concentrates the light passing through the optical film 1 to the spectrometer 6.

本實施例透過該第一光纖7與該第二光纖8優良的光傳導效果,使光源3光線可以集中、高效率地傳導至該光學薄膜1,而通過該光學薄膜1後的穿透光線也可以集中、高效率地傳導至該光譜儀6,使該光譜儀6檢測到的光訊號品質佳、雜訊低、強度強,從而能提升檢測精確度。In this embodiment, through the excellent light-conducting effect of the first optical fiber 7 and the second optical fiber 8, the light of the light source 3 can be concentrated and efficiently transmitted to the optical film 1, and the light passing through the optical film 1 is also penetrated. It can be concentrated and efficiently transmitted to the spectrometer 6, so that the optical signal detected by the spectrometer 6 is good in quality, low in noise and strong in intensity, thereby improving detection accuracy.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still The scope of the invention is covered.

1‧‧‧光學薄膜
2‧‧‧載台
21‧‧‧安裝部
211‧‧‧入光口
22‧‧‧基部
220‧‧‧容置空間
221‧‧‧基壁
222‧‧‧側壁
223‧‧‧出光口
23‧‧‧架部
24‧‧‧連接部
3‧‧‧光源
4‧‧‧聚光透鏡
5‧‧‧濾鏡
6‧‧‧光譜儀
7‧‧‧第一光纖
8‧‧‧第二光纖
1‧‧‧Optical film
2‧‧‧ stage
21‧‧‧Installation Department
211‧‧‧Into the light port
22‧‧‧ base
220‧‧‧ accommodating space
221‧‧‧ base wall
222‧‧‧ side wall
223‧‧‧Light outlet
23‧‧‧‧
24‧‧‧Connecting Department
3‧‧‧Light source
4‧‧‧ Concentrating lens
5‧‧‧ filter
6‧‧‧ Spectrometer
7‧‧‧First fiber
8‧‧‧second fiber

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一立體分解圖,顯示本發明光學薄膜之膜厚量測裝置的一第一實施例; 圖2是該第一實施例的一組合側視圖; 圖3為ITO薄膜的光穿透率與膜厚的關係圖; 圖4是一膜厚比較圖,顯示利用本發明與光譜式橢圓儀分別量測5個不同厚度的光學薄膜的量測結果;及 圖5是一組合側視圖,顯示本發明光學薄膜之膜厚量測裝置的一第二實施例。Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is an exploded perspective view showing a first embodiment of the film thickness measuring device of the optical film of the present invention; Figure 2 is a combined side view of the first embodiment; Figure 3 is a graph showing the relationship between the light transmittance of the ITO film and the film thickness; Figure 4 is a comparison of the film thicknesses, showing the use of the present invention and the spectral ellipsometer The measurement results of five different thickness optical films are measured; and FIG. 5 is a combined side view showing a second embodiment of the film thickness measuring device of the optical film of the present invention.

2‧‧‧載台 2‧‧‧ stage

21‧‧‧安裝部 21‧‧‧Installation Department

211‧‧‧入光口 211‧‧‧Into the light port

22‧‧‧基部 22‧‧‧ base

220‧‧‧容置空間 220‧‧‧ accommodating space

221‧‧‧基壁 221‧‧‧ base wall

222‧‧‧側壁 222‧‧‧ side wall

223‧‧‧出光口 223‧‧‧Light outlet

23‧‧‧架部 23‧‧‧‧

24‧‧‧連接部 24‧‧‧Connecting Department

3‧‧‧光源 3‧‧‧Light source

4‧‧‧聚光透鏡 4‧‧‧ Concentrating lens

5‧‧‧濾鏡 5‧‧‧ filter

6‧‧‧光譜儀 6‧‧‧ Spectrometer

Claims (7)

一種光學薄膜之膜厚量測裝置,用於量測一光學薄膜的厚度,並包含: 一載台,用於承載該光學薄膜,並具有位於該光學薄膜的兩相反側且間隔相對的一入光口與一出光口; 一光源,位於該載台的該入光口一側; 一聚光透鏡,位於該光源與該光學薄膜之間,用於將該光源的光線聚光後再射向該光學薄膜;及 一光譜儀,位於該載台的該出光口一側,用於檢測通過該光學薄膜而來的光訊號,該光譜儀能吸收波長為200 nm ~850nm的光訊號。An optical film thickness measuring device for measuring the thickness of an optical film, and comprising: a stage for carrying the optical film, and having opposite sides on opposite sides of the optical film a light source and a light exit port; a light source located on the light entrance side of the stage; a collecting lens located between the light source and the optical film for collecting the light of the light source and then directing The optical film; and a spectrometer located on the light exit side of the stage for detecting an optical signal passing through the optical film, the spectrometer capable of absorbing optical signals having a wavelength of 200 nm to 850 nm. 如請求項1所述的光學薄膜之膜厚量測裝置,還包含一個位於該光源與該入光口間的第一光纖,該第一光纖將該光源的光線導引至該入光口,使光線通過該聚光透鏡後射向該光學薄膜。The film thickness measuring device of the optical film of claim 1, further comprising a first optical fiber between the light source and the light entrance port, the first optical fiber guiding the light of the light source to the light entrance port, Light is passed through the concentrating lens and directed toward the optical film. 如請求項2所述的光學薄膜之膜厚量測裝置,還包含一位於該光譜儀與該出光口間的第二光纖,該第二光纖將通過該光學薄膜的光線導引至該光譜儀。The film thickness measuring device for an optical film according to claim 2, further comprising a second optical fiber between the spectrometer and the light exit port, the second optical fiber guiding light passing through the optical film to the spectrometer. 如請求項1所述的光學薄膜之膜厚量測裝置,還包含一位於該光學薄膜與該光源之間的濾鏡,該濾鏡用於濾除波長為200nm~400nm以外的光線。The film thickness measuring device for an optical film according to claim 1, further comprising a filter between the optical film and the light source, wherein the filter filters out light having a wavelength of from 200 nm to 400 nm. 如請求項4所述的光學薄膜之膜厚量測裝置,其中,該濾鏡位於該聚光透鏡與該光源之間。The film thickness measuring device for an optical film according to claim 4, wherein the filter is located between the collecting lens and the light source. 如請求項1至5中任一項所述的光學薄膜之膜厚量測裝置,其中,該光學薄膜為一個能吸收紫外光的透明導電氧化物薄膜。The film thickness measuring device for an optical film according to any one of claims 1 to 5, wherein the optical film is a transparent conductive oxide film capable of absorbing ultraviolet light. 如請求項6所述的光學薄膜之膜厚量測裝置,其中,該光譜儀是取波長為320nm~400nm的光訊號來分析得到該光學薄膜的厚度。The film thickness measuring device for an optical film according to claim 6, wherein the spectrometer is obtained by taking an optical signal having a wavelength of 320 nm to 400 nm to analyze the thickness of the optical film.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112805531A (en) * 2018-11-09 2021-05-14 株式会社神户制钢所 Oxide film thickness measuring device and method
CN112945110A (en) * 2021-01-29 2021-06-11 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) Thickness measuring device of anti-reflection film and method for in-situ monitoring of growth of anti-reflection film
TWI777576B (en) * 2020-09-30 2022-09-11 國立清華大學 Inspection method for multilayer semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112805531A (en) * 2018-11-09 2021-05-14 株式会社神户制钢所 Oxide film thickness measuring device and method
CN112805531B (en) * 2018-11-09 2022-04-19 株式会社神户制钢所 Oxide film thickness measuring device and method
TWI777576B (en) * 2020-09-30 2022-09-11 國立清華大學 Inspection method for multilayer semiconductor device
CN112945110A (en) * 2021-01-29 2021-06-11 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) Thickness measuring device of anti-reflection film and method for in-situ monitoring of growth of anti-reflection film

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