TWM443132U - Sheet adhesion type LED support of metal reflection cavity - Google Patents

Sheet adhesion type LED support of metal reflection cavity Download PDF

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Publication number
TWM443132U
TWM443132U TW101209604U TW101209604U TWM443132U TW M443132 U TWM443132 U TW M443132U TW 101209604 U TW101209604 U TW 101209604U TW 101209604 U TW101209604 U TW 101209604U TW M443132 U TWM443132 U TW M443132U
Authority
TW
Taiwan
Prior art keywords
metallic
metal
bracket
led support
cavity
Prior art date
Application number
TW101209604U
Other languages
Chinese (zh)
Inventor
xiao-ming Pei
Wei-Chao Wu
Zhen Li
Original Assignee
Shenzhen Luming Semiconductor Lighting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Luming Semiconductor Lighting Co Ltd filed Critical Shenzhen Luming Semiconductor Lighting Co Ltd
Publication of TWM443132U publication Critical patent/TWM443132U/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting

Abstract

A surface mount LED support with metallic reflective cavity includes a plastic frame member and a metallic frame member, wherein the LED support comprises a metallic reflector member which is constructed into a metallic reflector cup-member having a concave cavity. The metallic reflector member includes a bottom metallic plate and a side metallic plate constructing the concave cavity of the metallic cup-member. The side metallic plate is integrally formed by folding the bottom metallic plate. The metallic reflector cup-member has an inner surface coated with a highly reflective material. The LED support of the present invention has high light extraction efficiency, superior cooling capacity and wide range of use of power.

Description

五、新型說明: 【新型所屬之技術領域】 本創作涉及-種LED器件支架,具體而言是一種金屬反 射腔體的貼片式led支架。 【先前技術】 傳統的貼片式LED支架因體積小,結構簡單,很適合採 用全自動設備進行大批量生產,在使用過程中又可採用回流 焊操作,故在半導體照明應财非f廣泛。但因其反光杯主 體都是塑驗體結構’而且熱沉面财限,導致其取光效率 偏低,散熱能力差,使用功率窄。 【新型内容】. 本創作之目岐觀絲率高,散果好,功 率適用性廣的金屬反射雜_片式⑽支架。 本創作之目的通财下技術方絲實現。 一種金屬反射腔體的貼収LED支架,包括塑膠框和金 屬框,其特徵在於:所述貼片式LED支架的反射杯是金 射腔體結構。 甸久 所述反射杯是由底面油面的金屬片制圍成的凹狀 腔體。 所述側面金屬片是由底面金屬片折起而形成。 所述反射杯的内表面鐘有一層高反射材料。 本創作與現有器件led支架相比具有以下優點。 本創作之支架反射杯是以金屬框架為主體構成的,整個 支系的aa片載體和電路載體也是由金屬框架承擔的。支架反 射杯屬於金屬腔體結構,腔體内鍍有高反射材料,所以整個 支架的取光效率高;金屬框架作為晶片的載體,晶片散熱通 道短,散熱能力強;與傳統貼片式le:d支架相比,本創作之 支架熱沉面積大,不僅存在於支架底部,還包括反光杯部分 的金屬框架,從而增大了整個支架的熱容,使其可使用的功 率更尚,功率適用性廣。此外,本創作之支架由於是金屬腔 體的反射杯,不會出現因支架反光杯内的塑膠體變黃而引起 的光通量明顯下降的現象。因此,本創作既繼承了傳統的貼 片式LED支架的優點,體積小,結構簡單,很適合採用全自 • . · 動設進行大批量生產’在使用過程中可採用回流焊操作, 又提尚了取光效率和散熱能力’進一步擴展了貼片式LED的 應用領域。 【實施方式】 以下結合附圖對本創作所述之金屬反射腔體的貼片式 LED支架作進一步詳細描述。 如圖1與圖2所示,本創作之金屬反射腔體的貼片式LED 支架包括塑膠框1和金屬框,金屬框内設有金屬反射杯2。 金屬反射杯2是由底面3與側面4的金屬片共同圍成的凹狀 腔體,側面4是由底面3的金屬片折起形成的。反射杯的内 表面鍍有一層高反射材料。LED支架以金屬框為骨架射出成 型。支架的外形尺寸結構根據需要可做不同的設計。.金屬反 射杯杯底不僅是LED晶片的載體,而且一方面可作為晶片的 引線焊盤,另一方面也可作為支架外接電路焊盤5,支架反 射杯的側面是由底面的金屬片折起形成的,整個反射杯只有 在金屬片間隙處是塑膠材質,如此方便反射杯進行鍍高反射 材料的處理’有效地提高了該金屬反射腔體的貼片式LEI)支 架的取光效率;整個支架的金屬框較傳統的貼片式LEr)支架 的金屬框面積大很多,有效地提高了該支架的散熱能力,也 使該金屬反射腔體的貼片式LED支架可應用於更高功率。本 創作既繼承了傳統貼片式LED支架的優點,體積小,結構簡 單’很適合採用全自動設備進行大批量生產,在使用過程中 可採用回流焊操作,又提高了取光效率和散熱能力,進一步 擴展了貼片式LED的應用領域。 【圖式簡單說明】 圖1為本創作之金屬反射腔體的貼片式LED支架之正視圖; M443132 圖2為本創作之金屬反射腔體的貼片式LED支架之後視圖。 【主要元件符號說明】 1塑膠框 2金屬反射杯 3底面 4側面 5支架外接電路焊盤V. New description: [New technology field] This creation involves a kind of LED device bracket, specifically a patch type LED bracket with a metal reflective cavity. [Prior Art] Due to its small size and simple structure, the conventional SMD LED bracket is suitable for mass production using fully automatic equipment, and can be reflowed during use, so it is not widely used in semiconductor lighting. However, because the main body of the reflector cup is a plastic structure, and the heat sink surface is limited, the light extraction efficiency is low, the heat dissipation capability is poor, and the power consumption is narrow. [New Content]. The purpose of this creation is to achieve high metallographic spectroscopy (10) stents with high spectroscopy rate, good fruit scatter and wide applicability. The purpose of this creation is realized by the technical side of the money. A metal LED housing, comprising a plastic frame and a metal frame, wherein the reflective cup of the chip LED holder is a gold cavity structure. A long time, the reflector cup is a concave cavity surrounded by a metal sheet with a bottom oil surface. The side metal piece is formed by folding up the bottom metal piece. The inner surface of the reflector cup has a layer of highly reflective material. This creation has the following advantages compared with the existing device led bracket. The bracket reflector cup of the present invention is mainly composed of a metal frame, and the aa chip carrier and the circuit carrier of the entire branch are also undertaken by the metal frame. The bracket reflector cup belongs to the metal cavity structure, and the cavity body is plated with high reflection material, so the light extraction efficiency of the whole bracket is high; the metal frame is used as the carrier of the wafer, the heat dissipation channel of the wafer is short, and the heat dissipation capability is strong; and the conventional patch type le: Compared with the d bracket, the bracket has a large heat sink area, which is not only present at the bottom of the bracket, but also includes a metal frame of the reflector portion, thereby increasing the heat capacity of the entire bracket, so that the power available can be used more, and the power is suitable. Sexuality. In addition, since the stent of the present invention is a reflective cup of a metal cavity, there is no significant decrease in luminous flux caused by yellowing of the plastic body in the reflector of the stent. Therefore, this creation not only inherits the advantages of the traditional SMD LED bracket, but also has a small size and a simple structure. It is suitable for all-in-one. · Dynamic design for mass production. 'Reflow soldering operation can be used during use. The light extraction efficiency and heat dissipation capability have further expanded the application field of SMD LEDs. [Embodiment] The chip type LED holder of the metal reflective cavity described in the present application will be further described in detail below with reference to the accompanying drawings. As shown in FIG. 1 and FIG. 2, the chip-type LED bracket of the metal reflective cavity of the present invention comprises a plastic frame 1 and a metal frame, and a metal reflector cup 2 is arranged in the metal frame. The metal reflector cup 2 is a concave cavity surrounded by a metal piece of the bottom surface 3 and the side surface 4, and the side surface 4 is formed by folding a metal piece of the bottom surface 3. The inner surface of the reflector cup is coated with a layer of highly reflective material. The LED bracket is molded with a metal frame as a skeleton. The outer dimensions of the bracket can be designed differently as needed. The bottom of the metal reflector cup is not only the carrier of the LED chip, but also can be used as the lead pad of the wafer on the one hand, and can also be used as the external circuit pad 5 of the bracket on the other hand, and the side of the reflector reflector cup is folded by the metal piece on the bottom surface. Formed, the entire reflector cup is only made of plastic material at the gap of the metal sheet, so that the treatment of the plated high reflective material by the reflector cup is effectively 'effectively improving the light extraction efficiency of the patch type LEI bracket of the metal reflection cavity; The metal frame of the bracket is much larger than the metal frame of the conventional patch type LEr) bracket, which effectively improves the heat dissipation capability of the bracket, and also enables the patch LED bracket of the metal reflective cavity to be applied to higher power. This creation not only inherits the advantages of the traditional SMD LED bracket, but also has a small size and a simple structure. It is very suitable for mass production using fully automatic equipment. It can be reflowed during use, and the light extraction efficiency and heat dissipation capacity are improved. Further expands the application field of SMD LEDs. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view of a patch LED holder of a metal reflective cavity of the present invention; M443132 FIG. 2 is a rear view of a patch LED holder of the metal reflective cavity of the present invention. [Main component symbol description] 1 plastic frame 2 metal reflector cup 3 bottom surface 4 side 5 bracket external circuit pad

Claims (1)

M443132 .’ I ---- 六、申請專利範園: I 21%2曰鸳于 1 補丨 1. 一種金屬反射腔體的貼片式LED支架,包括瓣框^—-* 框’其特徵在於:所述貼片式led支架的反射杯是由底面 與側面的金屬片共同圍成的凹狀腔體。 2.如申5f專概圍第丨項所述之金屬反射腔體賴片式⑽ 支架’其特徵在於:所述側面金屬片是由底面金屬片折起 ' 而形成。 • ^ 3·如申請專概圍第1項所述之金屬反射腔體_>|式LED 支木’其特徵在於:所述反射杯的内表面鍍有一層高反射 材料。 M443132 七、圖式: 101.10.12 年月M443132 .' I ---- VI. Application for Patent Park: I 21%2曰鸳1 1丨 1. A SMD LED holder with a metal reflective cavity, including a petal frame ^—-* frame' The reflector cup of the patch-type led bracket is a concave cavity surrounded by a metal piece of a bottom surface and a side surface. 2. The metal reflective cavity (10) bracket as described in the above-mentioned item, wherein the side metal piece is formed by folding the bottom metal piece. • The metal reflective cavity _>|type LED girders as described in claim 1 is characterized in that the inner surface of the reflective cup is plated with a layer of highly reflective material. M443132 VII. Schema: 101.10.12
TW101209604U 2011-12-23 2012-05-22 Sheet adhesion type LED support of metal reflection cavity TWM443132U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011104389871A CN103178198A (en) 2011-12-23 2011-12-23 Surface-mount-type LED (light emitting diode) support with metallic reflection cavity

Publications (1)

Publication Number Publication Date
TWM443132U true TWM443132U (en) 2012-12-11

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US (1) US20130163259A1 (en)
JP (1) JP3177540U (en)
CN (1) CN103178198A (en)
TW (1) TWM443132U (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105135364A (en) * 2015-09-06 2015-12-09 得实光电实业(江门)有限公司 Novel optical element used for SMD lamp beads

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US5534718A (en) * 1993-04-12 1996-07-09 Hsi-Huang Lin LED package structure of LED display
JP4890775B2 (en) * 2005-03-23 2012-03-07 パナソニック株式会社 Light emitting module
TWM303493U (en) * 2006-07-21 2006-12-21 Lighthouse Technology Co Ltd Support rack structure and metal support rack of side light source SMD LED
US20090273004A1 (en) * 2006-07-24 2009-11-05 Hung-Yi Lin Chip package structure and method of making the same
CN200962430Y (en) * 2006-09-22 2007-10-17 深圳市瑞丰光电子有限公司 Led
KR100851183B1 (en) * 2006-12-27 2008-08-08 엘지이노텍 주식회사 Semiconductor light emitting device package
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JP2010003743A (en) * 2008-06-18 2010-01-07 Toshiba Corp Light-emitting device
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CN202384399U (en) * 2011-12-23 2012-08-15 深圳路明半导体照明有限公司 Patch type LED (light emitting diode)support of metallic reflection cavity body

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US20130163259A1 (en) 2013-06-27
CN103178198A (en) 2013-06-26
JP3177540U (en) 2012-08-09

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