M437430 五、新型說明： 【新型所屬之技術領域】 本新型是有關於一種照明裝置，特別是指一種LED的 照明裝置。 【先前技術】 LED具有壽命長、發光效率高及體積小等許多優點， 於是被大量的運用在各種照明的裝置上。而其中，led的 散熱是-個重要的課題，如果散熱不良會導致發光效 率及使用壽命的降低，而導致成本的増高，故各家廠商無不 尋求更好的散熱技術。 而在現有幾種常見的LED散熱技術。在以銀膠固晶的 製程中’使㈣散熱基板主要區分為金屬基板與陶究基板兩 大類’其中的金屬基板是選㈣或者鋼為材質，並以熱傳導 方式來散熱；而另-類，在共晶和覆晶的製程中，則是降低 介面熱阻並搭配陶究基板，來做熱傳導的散熱，此熱傳導以 水平和垂直基板的方向進行。 然而，在銀膠固晶製程上’無論是使用陶莞基板或是 鋁基板（MCPCB)，都是直接在基板上點銀膠後固晶，因此 基板的選擇和固晶銀膠的選擇影響很大；在共晶和覆晶製 程中，為了改善銀膠固晶的介面熱阻，則使用金錫介金屬 來降低介面熱阻，但其結構複雜、成本也較高。 【新型内容】 因此’本新型之目的’即在提供一種改良散熱效果的 照明裝置，以S升led照明裝置的亮度和壽命。 3 M437430 於是，一種照明裝置’包含一基板、一電路層、一傳 導機構及至少一 led晶片。 該基板具有一上板面及一位於該上板面相反側的下板 面。該電路層設置於該基板的上板面上。該傳導機構設置於 該基板的上板面上且具有一石墨層，並分割成數個彼此不導 電的導電單元。該led晶片以類似覆晶的結構設置於該傳 導機構上且該LED晶片4的兩個電極分別與其中兩個該等 導電單元電連接，而通過該傳導機構與該電路層電連接。 本新型的另一種照明裝置，包含一基板、一傳導機構魯 、一電路層及至少一 LED晶片。 該基板具有一上板面及一與該上板面相反的下板面。 該傳導機構設置於該基板的上板面上並具有一石墨層，該石 墨層厚度為5至ΙΟΟμπ^該電路層設置於該基板上且無電 連接。該LED晶片設置於該石墨層上並與該電路層電連接 。該散熱鰭片連接於該基板的下板面。 本新型之功效在於.本新型的結構組合並配合選用水 平方向導熱良好的石墨材料，所以得到了良好的導熱效果· 〇 【實施方式】 有關本新型之前述及其他技術内容、特點與功效，在 以下配合參考圖式之四個較佳實施例的詳細說明中，將可 清楚的呈現》 在本新型被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 M437430 參閱圖1，本新型照明裝置的第一較佳實施例包含一基 板1、一電路層2、一傳導機構3、二LED晶片4及_散熱 鰭片5。基板1可選用陶瓷基板或McpCB，並具有彼此相 反的一上板面11及一下板面12。電路層2設置於基板】的 上板面11上，且可為一環狀的電路板，或者兩塊間隔的電 路板，也可以直接在基板]的上板面u鍍上電路，主要是 能達到區分正極和負極達到供電效果即可。 傳導機構3,設置於該基板丨的上板面u上並與電路 層2互相間隔，具體而言，傳導機構3是設置在電路層2 的兩電極之間。傳導機構3具有―固定於基板i上板面u 的石墨層32，並分割成三個彼此間隔不導電的導電單元3ι ，且石墨層32可以為石墨粉 '天然石墨、鱗狀石墨、發泡 石墨或人造石墨其中之一，且較佳為高配向熱裂解石墨 (Highly ordered pyrolytic graphite，H〇PG)材質的石墨紙，兼 具導電與導熱功能，其厚度為5至1〇〇μιη，具體而言石 墨層32是以導熱膠帶、導熱膏、或是直接壓合的方式固定 於基板1。位於最外側的兩導電單元31，分別鄰近於該電 路層2的正極和負極，且該二導電單元31與該電路層2的 正極和負極分別以一對導線21電連接，換句話說其中一 導線21是連接電路層2的正極與鄰近該正極的導電單元3ι ’而另-導線21是連接電路層2的負極與鄰近該負極的導 電單元31。 LED晶片4,以串聯的方式電連接並採用類似覆晶的結 構設置於傳導機構3上，令每一 LED晶片4的兩電極41分 5 M437430 別與其中兩個石墨層32電連接，即每兩相鄰的導電單元3ι 會同時與一 LED晶片4電連接，具體而言，LED晶片4是 以銀膠35固定於石墨層32，且LED晶片4的p極連接於 其中一導電單元31，該LED晶片4的N極則連接於另—導 電單元31，再加上位於最外側的該二導電單元31分別對應 地與該電路層2的正極和負極電連接，而使該等LED晶片 4與電路層2形成電連接。但LED晶片4也可以並聯的方 式設置於傳導機構3上，LED晶片4的數目以及導電單元 31的數目也不以此為限，例如：也可以一個LED晶片4配 合兩個導電單元31，或者三個LED晶片4配合四個導電單 元31，以此類推，所以LED晶片4的數目以及導電單元31 的數目可以隨著需求去做相對應的調整。此外，除了最少 需要一對導線21外，在其它種的連接方式下，也可能需要 一對以上的導線21，例如在並聯的情況下可以用到多對的 導線21，導線21的數目並不以本實施例的數目為限。散熱 鰭片5連接於基板1的下板面12。 當供給電源（圖未示）給本第一較佳實施例的電路層2時| ，可以藉由石墨層32所形成的導電單元31傳導電力使 LED晶片4發光，並且在LED晶片4發光的同時，將led 晶片4發光所產生的熱能透過導電單元3i的熱傳導來達到 散熱的效果。再者，由於石墨層在水平方向優良的導熱能 力’而且石墨的重量比铭輕25%、比銅輕75%。除了藉由 石墨層32來大大降低下方的介面熱阻外，同時由於LED晶 片4疋採用類似覆晶的結構’因而led晶片4之間不需要 6 M437430 導線相連’就可以除去導線對LED晶片4發光的影響以 提升整體照明裝置的發光強度。 參閱圖2為本新型照明裝置的第二較佳實施例。第二 較佳實施例與第一較佳實施例大致上相同，兩者間主要的 差異在於傳導機構3，故其餘部分科贅述只針對差異的 部分做說明。 第二較佳實施例的傳導機構3具有一固定於基板丨上 板面11的石墨層32、-連接於石墨層32上的導熱層34, 及-設置於導熱層34上的導電層33,且分割成三個互相間 隔的導電單元31 ’但石墨層32與導熱層34各呈—板狀。 LED晶片4以金屬球36固定於導電層33上，使導電層％ 分別與LED晶片4及電路層2電連接，且金屬球％可以採 用錫球或者金錫合金球。較佳地，導電層33的材質選擇為 金’導熱層34為矽載板。 當供給電源（圖未示）給本第二較佳實施例的電路層2時 ，LED晶片4可以透過自導電層33傳導而來的電力而發光 ’但電力不會通過導熱層34，並且在LED晶片4發光的同 時，LED晶片4發光所產生的熱能以熱傳導的方式依序由 導電層33、導熱層34、石墨層32、基板i往散熱韓片5散 熱，透過導電單元31的熱傳導來達到散熱的效果。 參閱圖3為本新型照明裝置的第三較佳實施例。第三 較佳實施例與第二較佳實施例大致上相同，兩者之間主要 的差異在於··傳導機構3僅有導電層33分割為三個互不相 連的區塊，而導熱層34及石墨層32沒有分割，藉此相較 7 於第二較佳實施例，增加了石墨層32的表面積，而更能夠 利用石墨層32在水平方向上優良的導熱能力。 參閱圖4為本新型照明裝置的第四較佳實施例。該第 四較佳實施例包含一基板1、一電路層2、一傳導機構3、 —LED晶片4及一散熱韓片5。 基板1具有一上板面11及一與上板面u相反的下板面 12。傳導機構3設置於基板1的上板面u上並具有一石墨 層32 ,且石墨層32的厚度為5至1〇〇μιη的石墨紙，較佳 材料為咼配向熱裂解人造石墨。具體而言，石墨層32是利鲁 用導熱膠帶、導熱膏、或是直接壓合的方式固定於基板 電路層2為設置於石墨層32上且彼此無電連接的電路板。 二LED晶片4相反於電極41的一面以銀膠35固定於石墨 層32上且以串聯的方式電連接，也就是說，其中一 晶 片4的電極41(P極）與另一 LED晶片4的電極“…極）之 間以導線21連接，而每一 LED晶片4的另一電極41則以 導線21與電路層2電連接。但LED晶片4也可以並聯的方 式設置於傳導機構3上，LED晶片4的數目以及導電單元籲 31的數目也不以此為限，例如：也可以一個LED晶片4配 合兩個導電單元31，或者三個LED晶片4配合四個導電單 元31，以此類推，所以LED晶片4的數目以及導電單元31 的數目可以隨著需求去做相對應的調整。此外，除了最少 南要對導線21外，在其它種的連接方式下，也可能需要 對以上的導線21，例如在並聯的情況下可以用到多對的 導線21，導線21的數目並不以本實施例的數目為限。散熱 M437430 鰭片5連接於基板1的下板面12。所以在第四較佳實施例 中的傳導機構3不會傳導LED晶片4所需的電力，但藉由 石墨層32將LED晶片4所產生的熱量傳導，而達到散熱的 效果。 綜上所述’本新型的結構組合以及選用高配向熱裂解 石墨材料，其在水平方向上的熱導率15〇〇w/mk遠優於其垂 直方向上的熱導率5W/mk，所以在水平方向上的導熱效果 良好，並配合扁平且表面積大的石墨層32，大大的增加了 散熱效果，故確實能逹成本新型之目的。 惟以上所述者，僅為本新型之較佳實施例而已，當不 月b以此限定本新型實施之範圍，即大凡依本新型申請專利 範圍及新型說明内容所作之簡單的等效變化與修飾，皆仍 屬本新型專利涵蓋之範圍内。M437430 V. New description: [New technical field] The present invention relates to a lighting device, and more particularly to an LED lighting device. [Prior Art] LED has many advantages such as long life, high luminous efficiency, and small volume, and is thus widely used in various illumination devices. Among them, LED heat dissipation is an important issue. If poor heat dissipation leads to a decrease in luminous efficiency and service life, resulting in high cost, various manufacturers are seeking better heat dissipation technology. There are several common LED cooling technologies available. In the process of solidification by silver paste, the (four) heat-dissipating substrate is mainly divided into two types: metal substrate and ceramic substrate. The metal substrate is selected from (four) or steel, and is heat-dissipated to dissipate heat; In the process of eutectic and flip chip, the thermal resistance of the interface is lowered and matched with the ceramic substrate for heat conduction of heat conduction, which is performed in the direction of the horizontal and vertical substrates. However, in the silver paste solid-crystal process, whether using a ceramic substrate or an aluminum substrate (MCPCB), the silver paste is directly deposited on the substrate, and the selection of the substrate and the selection of the solid silver paste are very affected. In the eutectic and flip chip process, in order to improve the interface thermal resistance of the silver paste, the gold-tin metal is used to reduce the interface thermal resistance, but the structure is complicated and the cost is high. [New content] Therefore, the purpose of the present invention is to provide an illumination device with improved heat dissipation effect, and to use the brightness and life of the S-lit LED illumination device. 3 M437430 Thus, a lighting device' includes a substrate, a circuit layer, a conductive mechanism, and at least one led wafer. The substrate has an upper plate surface and a lower plate surface on the opposite side of the upper plate surface. The circuit layer is disposed on an upper surface of the substrate. The conducting mechanism is disposed on the upper surface of the substrate and has a graphite layer and is divided into a plurality of conductive units that are not electrically conductive to each other. The led wafer is disposed on the guiding mechanism in a flip chip-like structure and the two electrodes of the LED chip 4 are electrically connected to two of the conductive units, respectively, and are electrically connected to the circuit layer through the conducting mechanism. Another illumination device of the present invention comprises a substrate, a conductive mechanism, a circuit layer and at least one LED chip. The substrate has an upper plate surface and a lower plate surface opposite to the upper plate surface. The conducting mechanism is disposed on the upper surface of the substrate and has a graphite layer having a thickness of 5 to ΙΟΟμπ^. The circuit layer is disposed on the substrate and has no electrical connection. The LED chip is disposed on the graphite layer and electrically connected to the circuit layer. The heat dissipation fins are connected to the lower surface of the substrate. The utility model has the advantages that the structure of the novel combination and the graphite material with good heat conduction in the horizontal direction are selected, so that a good heat conduction effect is obtained. 实施 [Embodiment] The foregoing and other technical contents, features and effects of the present invention are In the following detailed description of the four preferred embodiments with reference to the drawings, the present invention will be clearly described. Before the present invention is described in detail, it is noted that in the following description, similar elements are identical. The number is used to indicate. M437430 Referring to Figure 1, a first preferred embodiment of the novel illumination device includes a substrate 1, a circuit layer 2, a conductive mechanism 3, two LED chips 4, and a heat sink fin 5. The substrate 1 may be a ceramic substrate or a McCCB, and has an upper plate surface 11 and a lower plate surface 12 opposite to each other. The circuit layer 2 is disposed on the upper surface 11 of the substrate, and may be an annular circuit board, or two spaced circuit boards, or may be directly plated on the upper surface of the substrate. It is enough to distinguish between the positive electrode and the negative electrode to achieve the power supply effect. The conduction mechanism 3 is disposed on the upper surface u of the substrate 并 and spaced apart from the circuit layer 2, specifically, the conduction mechanism 3 is disposed between the two electrodes of the circuit layer 2. The conductive mechanism 3 has a graphite layer 32 fixed to the plate surface u on the substrate i, and is divided into three conductive units 3ι which are spaced apart from each other, and the graphite layer 32 may be graphite powder 'natural graphite, scaly graphite, foamed One of graphite or artificial graphite, and preferably graphite paper of highly-ordered pyrolytic graphite (H〇PG), which has both electrical and thermal conductivity, and has a thickness of 5 to 1 〇〇μιη, specific The graphite layer 32 is fixed to the substrate 1 by a heat conductive tape, a thermal paste, or a direct press fit. The two outer conductive units 31 are located adjacent to the positive and negative electrodes of the circuit layer 2, respectively, and the two conductive units 31 and the positive and negative electrodes of the circuit layer 2 are electrically connected by a pair of wires 21, in other words, one of them. The wire 21 is a positive electrode connecting the circuit layer 2 and a conductive unit 3' adjacent to the positive electrode, and the other wire 21 is a negative electrode connecting the circuit layer 2 and a conductive unit 31 adjacent to the negative electrode. The LED chips 4 are electrically connected in series and are arranged on the conducting mechanism 3 by a flip chip-like structure, so that the two electrodes 41 of each LED chip 4 are electrically connected to two of the graphite layers 32 by 5 M 437 430, that is, each The two adjacent conductive units 3 ι are electrically connected to an LED chip 4 at the same time. Specifically, the LED chip 4 is fixed to the graphite layer 32 by the silver paste 35 , and the p-pole of the LED chip 4 is connected to one of the conductive units 31 . The N-pole of the LED chip 4 is connected to the other conductive unit 31, and the two conductive units 31 located at the outermost side are respectively electrically connected to the positive and negative electrodes of the circuit layer 2, so that the LED chips 4 are Electrical connection is made to the circuit layer 2. However, the LED chips 4 can also be disposed in parallel on the conductive mechanism 3. The number of the LED chips 4 and the number of the conductive units 31 are not limited thereto. For example, one LED chip 4 can also be combined with two conductive units 31, or The three LED chips 4 are mated with four conductive units 31, and so on, so the number of LED wafers 4 and the number of conductive units 31 can be adjusted accordingly as needed. In addition, in addition to the minimum number of wires 21 required, in other connection modes, more than one pair of wires 21 may be required. For example, in the case of parallel connection, a plurality of pairs of wires 21 may be used, and the number of wires 21 is not It is limited to the number of the embodiment. The heat dissipation fins 5 are connected to the lower plate surface 12 of the substrate 1. When a power source (not shown) is supplied to the circuit layer 2 of the first preferred embodiment, the LED wafer 4 can be made to emit light by the conductive unit 31 formed by the graphite layer 32, and the LED chip 4 emits light. At the same time, the heat energy generated by the light emission of the LED chip 4 is transmitted through the heat conduction of the conductive unit 3i to achieve the heat dissipation effect. Furthermore, the graphite layer has excellent thermal conductivity in the horizontal direction and the weight of graphite is 25% lighter and 75% lighter than copper. In addition to the graphite layer 32 to greatly reduce the thermal resistance of the underlying interface, and because the LED wafer 4 is similar to the flip chip structure 'there is no need to connect 6 M437430 wires between the LED chips 4', the wire pair LED chip 4 can be removed. The effect of illumination is to increase the luminous intensity of the overall illumination device. Referring to Figure 2, a second preferred embodiment of the illumination device of the present invention is shown. The second preferred embodiment is substantially identical to the first preferred embodiment. The main difference between the two is the conduction mechanism 3. Therefore, the rest of the section explains only the differences. The conductive mechanism 3 of the second preferred embodiment has a graphite layer 32 fixed to the upper surface 11 of the substrate, a heat conducting layer 34 connected to the graphite layer 32, and a conductive layer 33 disposed on the heat conducting layer 34. And divided into three mutually spaced conductive elements 31 'but the graphite layer 32 and the heat conductive layer 34 each have a plate shape. The LED chip 4 is fixed to the conductive layer 33 by a metal ball 36, and the conductive layer % is electrically connected to the LED chip 4 and the circuit layer 2, respectively, and the metal ball % can be a solder ball or a gold-tin alloy ball. Preferably, the material of the conductive layer 33 is selected to be a gold' thermally conductive layer 34 being a carrier. When a power source (not shown) is supplied to the circuit layer 2 of the second preferred embodiment, the LED chip 4 can emit light through the power conducted from the conductive layer 33, but the power does not pass through the heat conductive layer 34, and While the LED chip 4 emits light, the heat generated by the LED chip 4 is thermally radiated by the conductive layer 33, the heat conductive layer 34, the graphite layer 32, and the substrate i to the heat dissipation film 5 in a thermally conductive manner, and the heat conduction through the conductive unit 31 is performed. Achieve the effect of heat dissipation. Referring to Figure 3, a third preferred embodiment of the illuminating device of the present invention is shown. The third preferred embodiment is substantially the same as the second preferred embodiment. The main difference between the two is that the conductive mechanism 3 has only the conductive layer 33 divided into three mutually disconnected blocks, and the heat conducting layer 34 The graphite layer 32 is not divided, thereby increasing the surface area of the graphite layer 32 compared to the second preferred embodiment, and is more capable of utilizing the excellent thermal conductivity of the graphite layer 32 in the horizontal direction. Referring to Figure 4, a fourth preferred embodiment of the illuminating device of the present invention is shown. The fourth preferred embodiment comprises a substrate 1, a circuit layer 2, a conducting mechanism 3, an LED chip 4, and a heat sinking film 5. The substrate 1 has an upper plate surface 11 and a lower plate surface 12 opposite to the upper plate surface u. The conductive mechanism 3 is disposed on the upper plate surface u of the substrate 1 and has a graphite layer 32, and the graphite layer 32 has a thickness of 5 to 1 μm of graphite paper. The preferred material is ruthenium-aligned thermally cracked artificial graphite. Specifically, the graphite layer 32 is fixed to the substrate by a heat conductive tape, a thermal conductive paste, or a direct compression bonding. The circuit layer 2 is a circuit board which is provided on the graphite layer 32 and is not electrically connected to each other. The two LED chips 4 are fixed to the graphite layer 32 with silver paste 35 on the opposite side of the electrode 41 and are electrically connected in series, that is, the electrode 41 (P pole) of one wafer 4 and the other LED wafer 4 The electrodes "..." are connected by wires 21, and the other electrode 41 of each LED chip 4 is electrically connected to the circuit layer 2 by wires 21. However, the LED chips 4 can also be arranged in parallel on the conduction mechanism 3, The number of the LED chips 4 and the number of the conductive elements 31 are not limited thereto. For example, one LED chip 4 may be combined with two conductive units 31, or three LED chips 4 may be combined with four conductive units 31, and so on. Therefore, the number of LED chips 4 and the number of conductive units 31 can be adjusted accordingly according to requirements. In addition, in addition to the least south to the wire 21, in other connection modes, the above wires may be required. 21, for example, in the case of parallel connection, a plurality of pairs of wires 21 can be used, and the number of the wires 21 is not limited to the number of the embodiment. The heat dissipation M437430 fins 5 are connected to the lower plate surface 12 of the substrate 1. In the four preferred embodiments The guiding mechanism 3 does not conduct the electric power required for the LED chip 4, but the heat generated by the LED chip 4 is conducted by the graphite layer 32 to achieve the heat dissipating effect. In summary, the structural combination of the present invention and the selection of the high alignment Thermally cracked graphite material, its thermal conductivity in the horizontal direction is 15〇〇w/mk far better than its thermal conductivity in the vertical direction of 5W/mk, so the thermal conductivity in the horizontal direction is good, and it is flat and surface area The large graphite layer 32 greatly increases the heat dissipation effect, so it can indeed cost a new type of purpose. However, the above is only a preferred embodiment of the present invention, and the present invention is limited to The scope, that is, the simple equivalent changes and modifications made by the company in accordance with the scope of the new patent application and the new description are still within the scope of this new patent.
【圖式簡單說明】 圖1是一示意圖， 例； 圖2是一示意圖， 例； 圓3是一示意圖， 例；及 說明本新型照明裝置的第一較佳實施 說明本新型照明裝置的第二較佳實施 說明本新型照明裝置的第三較佳實施 圖4是一示意圖，說明本新型照明裝置的第四較佳實施 例。 9 M437430 【主要元件符號說明】 1 基板 33 導電層 11 上板面 34 導熱層 12 下板面 35 銀膠 2 電路層 36 金屬球 21 導線 4 LED晶片 3 傳導機構 41 電極 31 導電單元 5 散熱鰭片 32 石墨層 10BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view, an example; FIG. 2 is a schematic view; an example; a circle 3 is a schematic view; an example; and a first preferred embodiment of the novel lighting device illustrating a second embodiment of the novel lighting device BEST MODE FOR CARRYING OUT THE INVENTION A third preferred embodiment of the present illuminating device is a schematic view showing a fourth preferred embodiment of the illuminating device of the present invention. 9 M437430 [Main component symbol description] 1 Substrate 33 Conductive layer 11 Upper plate surface 34 Thermal conductive layer 12 Lower surface 35 Silver paste 2 Circuit layer 36 Metal ball 21 Conductor 4 LED wafer 3 Conduction mechanism 41 Electrode 31 Conductive unit 5 Heat sink fin 32 graphite layer 10