M426599 . 五、新型說明： . 【新型所屬之技術領域】 • 本新型是有關於一種蒸鍵(evaporation)設備，且特別是 有關於一種薄膜蒸鍍設備。 【先前技術】 隨著可攜式電子裝置的普及，為了維持其外觀，對於 φ 沒類可攜式電子裝置之外層表面的保護要求也日益提高。 目則’為了保護這些電子裝置的外層表面，通常會在電子 裝置的外層表面上塗佈一層薄膜，例如抗指紋膜等抗汙薄 膜。舉例而言，現在相當流行之觸控式電子裝置的觸控螢 幕表面通常均設有一層抗指紋膜’以使螢幕表面在歷經使 用者的多次碰觸摩擦後，仍保有良好的顯示品質與操作敏 感度。 ^ 般而s ’這類表面上所覆蓋的薄膜大都具有良好之 鲁 抗汙丨生、可防止指紋沾黏、觸感平滑、可防水排油與透明 ' 等特，。此外’這類薄膜對其所覆蓋之裝置的外層表面需 • "、有尚附著力，以延長薄膜之使用壽命。 目別於待處理基材之表面塗佈薄膜之方式主要有四 義#第一種方式係真空蒸鍍方式，其係在真空環境下，於 i#之下方加熱薄膜塗料，使薄膜塗料氣化而上升附著在 二之下表面上，進而在基材之下表面上覆蓋一層薄膜。 • I ’此種塗佈方式僅可進行基材的單-表面塗佈，不適 '巾心來塗佈具複雜結構之基材。此外，在此種塗佈方式 ’由於受熱後氣化之塗料具有由下而上的方向性，因此 M426599 基材對於其上方之另—基材具有遮蔽性，故此 次蒸鍍所能處理的基材有限。 ' η “ 另—方面，此種加熱蒸鍵製 転要求之真工度較高，因此需耗# 到與維持反應所f之真空度ϋ η” *絲來運 使得製程成本大幅提ί Μ，此錢設備造價昂貴， 待處潤塗佈（dipping e°ating)方式’其係將 塗料溶液中，再將待處理基材自薄膜 f斗溶液巾取出，藉此使_塗㈣覆在待處理基材之表 接此種塗佈方式可對待處理基材進行多面塗佈，但設 備體積較為魔大。 第三種方式為喷霧式塗佈（spray⑽ting)方S，其係以 汾，裝置直接朝待處理基材之表面喷射，而將薄膜塗料喷 蚀一待處理基材之表面上，藉以在待處理基材之表面上塗 層薄膜。然而’噴霧裝置所噴出之薄膜塗料大都在尚 =化别便已接觸到待處理基材之表面，因而喷霧裝置所 之霧滴會滴在基材之待塗佈之表面上。如此一來，將 導致所形成之薄膜的均勻性不佳。 4第四種方式為刷塗(brushcoating)法，其係以刷子直接 將薄膜塗料塗设在待處理基材之表面上。然而，這樣的塗 佈方式常會在相鄰之二塗刷區域之相鄰處上產生重覆塗佈 的現象，導致所形成之薄膜不均勻。 因此，目前亟需一種蒸鍍設備，可同時在多個基材上 形成均句薄膜。 【新型内容】 M426599 因此，本新型之一態樣就是在提供一種薄膜蒸鍍設 備，其可在同一真空腔室中臨場(in-situ)進行基材表面的清 潔、改質與鍍膜，故可提高製程的可靠度，並可縮短製程 * 時間。 • 本新型之另一態樣是在提供一種薄膜蒸鍍設備，其可 使薄膜塗料蒸氣分子擴散於真空腔室内，因此可進行無方 向性的鑛膜，如此一來可進行具複雜結構之基材的表面鑛 ’ 膜處理。 φ 本新型之又一態樣是在提供一種薄膜蒸鍍設備，其可 使薄膜塗料蒸氣分子均勻散佈於真空腔室内，因此可一次 進行大量基材之表面鍍膜處理。 本新型之再一態樣是在提供一種薄膜蒸鍍設備，其無 需如習知加熱蒸鍍設備需高度真空的反應室，因此可大幅 降低製程成本。 本新型之再一態樣是在提供一種薄膜蒸鍍設備，其真 空腔室内之壓力高於習知加熱蒸鍍製程之真空腔室，因此 φ 薄膜塗料蒸氣分子在真空腔室内之碰撞頻率較高，使得薄 膜塗料蒸氣分子可快速移動充滿真空腔室，而可提高真空 腔室内之薄膜塗料蒸氣分子的均勻度，進而可增進基材之 表面上所鍍覆之薄膜的厚度均勻性。 根據本新型之上述目的，提出一種薄膜蒸鍍設備。此 蒸鍍設備包含一第一真空腔室、一第一進氣系統、一第一 排氣系統、一承載元件以及一霧化裝置。第一進氣系統與 第一真空腔室連通，且適用以將一工作氣體導入第一真空 腔室内。第一排氣系統與第一真空腔室連通，且適用以對 M426599 第一真空腔室進行抽氣處理。承載元件適用以將至少一基 材裝載至第一真空腔室。霧化裝置設於第一真空腔室内， 且適用以將一薄膜塗料溶液霧化與氣化成複數個薄膜塗料 • 蒸氣分子，而沉積在前述至少一基材之一表面上 - 依據本新型之一實施例，上述之薄膜蒸鍍設備更包含 一電漿裝置設於第一真空腔室中，且適用以產生一電漿來 對上述至少一基材之表面進行一表面活化處理。 ' 依據本新型之另一實施例，上述之薄膜蒸鍍設備更包 Φ 含一電漿裝置設於第一真空腔室外，且適用以產生一電漿 來對上述至少一基材之該表面進行一表面活化處理，其中 此電漿透過一輸送管路傳送至第一真空腔室内。 依據本新型之又一實施例，上述之薄膜蒸鍍設備更包 含一壓力計設於第一真空腔室上，適用以量測第一真空腔 室内之壓力。 依據本新型之又一實施例，上述之薄膜蒸鍍設備更包 含一儲液桶，適用以儲放薄膜塗料溶液與將薄膜塗料溶液 φ 提供給霧化裝置。 依據本新型之再一實施例，上述之薄膜蒸鍍設備更包 含一加熱器設於第一真空腔室内，以加速薄膜塗料蒸氣分 子於第一真空腔室内的擴散。 依據本新型之再一實施例，上述之薄膜蒸鍍設備更包 含一加熱裝置設於第一真空腔室之一腔壁上，以加熱腔壁。 依據本新型之再一實施例，上述之薄膜蒸鍍設備更包 含一擾流裝置設置在第一真空腔室中。 依據本新型之再一實施例，上述之承載元件可自轉地 M426599 或可公轉地設置於第一真空腔室或第二真空腔室中。 根據本新型之上述目的，另提出一種薄膜蒸鍍設備。 此薄膜蒸鍍設備包含一第一真空腔室、一第一進氣系統、 一第一排氣系統、一承載元件、一霧化裳置以及一第一輸 送管路。第一進氣系統與第一真空腔室連通，適用以將一 第一工作氣體導入第一真空腔室内。第一排氣系統與第一 真空腔室連通，且適用以對第一真空腔室進行抽氣處理。 承載元件適用以將至少一基材裝載至第一真空腔室。霧化 裝置設於第一真空腔室外，且適用以將一薄膜塗料溶液霧 化與氣化成複數個薄膜塗料蒸氣分子。第一輸送管路連通 第一真空腔室與霧化裝置，且適用以將薄膜塗料蒸氣分子 自霧化裝置傳送至第一真空腔室内，而沉積在前述至少一 基材之一表面上。 依據本新型之一實施例，上述之薄膜蒸鍍設備更包含 一電漿裝置設於第一真空腔室中，且適用以產生一電漿來 對上述至少一基材之表面進行一表面活化處理。 依據本新型之另一實施例，上述之薄膜蒸鍍設備更包 含一電漿裝置設於第一真空腔室外，且適用以產生一電漿 來對上述至少一基材之表面進行一表面活化處理，其中此 電漿透過一第二輸送管路傳送至第一真空腔室内。 依據本新型之又一實施例，上述之薄膜蒸鍍設備更包 含：一第一壓力計設於第一真空腔室上，且適用以量測第 一真空腔室内之壓力；以及一儲液桶適用以儲放薄膜塗料 溶液與將薄膜塗料溶液提供給霧化裝置。 依據本新型之再一實施例，上述之薄膜蒸鍍設備更包 M426599 含：一第二真空腔室；一第一閘閥適用以控制第二真空腔 室與第一真空腔室之間的連通；一第二閘閥適用以控制上 述至少一基材進入第二真空腔室之入口的開關；以及一電 • 漿裝置設於第二真空腔室内，適用以產生一電漿來對前述 . 至少一基材之表面進行一表面活化處理。 依據本新型之再一實施例，上述之薄膜蒸鍍設備更包 含：一第二進氣系統與第二真空腔室連通，且適用以將一 ' 第二工作氣體導入第二真空腔室内；一第二排氣系統與第 I 二真空腔室連通，且適用以對第二真空腔室進行抽氣處 理；以及一第二壓力計設於第二真空腔室上，且適用以量 測第二真空腔室内之壓力。 【實施方式】 請參照第1圖，其係繪示依照本新型之一實施方式的 一種薄膜蒸鍍設備的裝置示意圖。在本實施方式中，薄膜 之蒸鍍設備200a主要可包含真空腔室202、霧化裝置206、 φ 排氣系統208、進氣系統218、以及承載元件210。 真空腔室202可提供密閉的處理空間，來進行待處理 基材之表面薄膜的蒸鍍。進氣系統218與真空腔室202連 通，而可將所需之工作氣體及製程輔助氣體載入真空腔室 202内。排氣系統208同樣與真空腔室202連通，而可對 真空腔室202進行抽氣處理，以將多餘的工作氣體或廢氣 排出真空腔室202。此外，利用排氣系統208來將真空腔 室202内之氣體抽出，更可藉此降低真空腔室202内的壓 力，進而提供真空腔室202所需之製程壓力。 M426599 A材件210則係用以裝載一或多個基材222，並將 基材222運运至真空腔室2G2内，且可 件210可例如為承載架或承二2 實施例中，承載元件21〇可為具有開口 、一 ^材222與承載元件21〇接合表面的部分不會受到承2 件训遮蔽’藉此設計可對基材222之多個表面同時=行 蒸鑛處理。 〜在一實施例中，承載元件210在真空腔室2〇2内係固 定的。在另一實施例中，承載元件21〇設置成可在真空腔 至202内原地旋轉，亦即自轉。在又一實施例中承載元 件210設置成可在真空腔室2〇2内相對於真空腔室2〇2内 的其他裝置旋轉，亦即公轉。 基材222可例如為保護玻璃、塑膠基材、強化玻璃或 金屬基材。在一些例子中，基材222可為具簡單結構的板 狀物’例如玻璃板。在另一些例子中’基材222亦可為具 複雜結構的物件，例如電子元件之殼體或球具。 在此實施方式中，霧化裝置206係設置於真空腔室202 内。霧化裝置206可用以將薄膜塗料溶液214霧化成薄膜 塗料霧氣224，甚至可將薄膜塗料溶液214氣化成許多的 薄膜塗料蒸氣分子226。這些薄膜塗料蒸氣分子226與基 材222接觸後’便沉積在基材222之表面上，進而在所有 基材222之表面上形成薄膜。在一些實施例中，霧化裝置 206可例如為超音波霧化裝置、加熱霧化裝置、高壓喷霧 裴置、或喷嘴霧化裝置。 薄膜塗料溶液214可包含薄膜塗料與溶劑。在一些實 M426599 施例中’薄膜塗料溶液214之溶劑較佳可例如包含高揮發 性液體、水、或高揮發性液體與水所混合而成之液體。在 一例子中’當欲鑛覆在基材222表面上之薄膜為抗汙薄 膜’薄膜塗料溶液214之薄膜塗料包含抗汙塗料。此抗汙 塗料之材料可例如包含氟碳矽烴類化合物、全氟碳矽烴類 化合物、氟碳矽烷烴類化合物、全氟矽烷烴類化合物、全 氟矽烷烴醚類化合物、含氣基全氟矽烷烴醚類化合物、或 含氣基全氟矽烷烴醚類化合物。M426599 . V. New description: . [New technical field] The present invention relates to an evaporation device, and in particular to a thin film evaporation device. [Prior Art] With the popularization of portable electronic devices, in order to maintain their appearance, the protection requirements for the outer surface of the φ portable electronic device are also increasing. In order to protect the outer surface of these electronic devices, a thin film such as an anti-fouling film such as an anti-finger film is usually applied to the outer surface of the electronic device. For example, the touch screen surface of a currently popular touch-sensitive electronic device is usually provided with an anti-fingerprint film to maintain good display quality after repeated rubbing by the user. Operational sensitivity. ^ Generally, the film covered on the surface has a good anti-pollution, can prevent fingerprints from sticking, smooth touch, waterproof and oil-repellent and transparent. In addition, such films require <"" to the outer surface of the device they cover to extend the life of the film. The method of coating the surface of the substrate to be treated is mainly four senses. The first method is a vacuum evaporation method, which is to heat the film coating under the i# in a vacuum environment to vaporize the film coating. The rise adheres to the lower surface of the substrate, and the surface of the substrate is covered with a film. • I ′ This coating method can only apply single-surface coating of the substrate, and it is not suitable for coating a substrate with a complicated structure. In addition, in this coating method, since the coating which is vaporized after being heated has a bottom-up directionality, the M426599 substrate has a shielding property for the other substrate above it, so the base which can be processed by the vapor deposition this time. Limited material. ' η " On the other hand, this kind of heating steaming key requires a high degree of real work, so it takes up to the vacuum degree of maintaining the reaction ϋ η" * wire to make the process cost greatly improved, This money equipment is expensive to manufacture, and the dipping e°ating method is used to remove the substrate to be treated from the film f bucket solution, thereby allowing the coating to be treated. The surface of the substrate is connected to the substrate to be coated on the surface to be treated, but the volume of the device is relatively large. The third way is spray coating (spray coating), which is sprayed directly onto the surface of the substrate to be treated, and the film coating is sprayed on the surface of the substrate to be treated, thereby waiting for The coated film on the surface of the substrate is treated. However, most of the film coatings sprayed by the spray device have been exposed to the surface of the substrate to be treated, so that the droplets of the spray device will drip onto the surface of the substrate to be coated. As a result, the uniformity of the formed film will be poor. 4 The fourth method is a brush coating method in which a film coating is directly applied to the surface of a substrate to be treated by a brush. However, such a coating method often causes repeated coating on adjacent portions of the adjacent two painted regions, resulting in uneven film formation. Therefore, there is a need for an evaporation apparatus that can form a uniform film on a plurality of substrates at the same time. [New content] M426599 Therefore, one aspect of the present invention is to provide a thin film evaporation apparatus capable of in-situ cleaning, modifying and coating the surface of the substrate in the same vacuum chamber. Improve process reliability and reduce process* time. • Another aspect of the present invention is to provide a thin film evaporation apparatus which can diffuse vapor molecules of a film coating into a vacuum chamber, thereby enabling a non-directional mineral film, thereby enabling a complex structure. The surface of the material is 'membrane treated'. φ Another aspect of the present invention is to provide a thin film evaporation apparatus which allows the vapor molecules of the film coating to be uniformly dispersed in the vacuum chamber, so that the surface coating treatment of a large number of substrates can be performed at one time. A further aspect of the present invention is to provide a thin film evaporation apparatus which does not require a high vacuum chamber for heating an evaporation apparatus, thereby greatly reducing the process cost. A further aspect of the present invention is to provide a thin film evaporation apparatus having a higher pressure in a vacuum chamber than a vacuum chamber of a conventional heating evaporation process, so that a collision frequency of a φ film coating vapor molecule in a vacuum chamber is high. The film coating vapor molecules can be quickly moved to fill the vacuum chamber, and the uniformity of the vapor molecules of the film coating in the vacuum chamber can be improved, thereby improving the thickness uniformity of the film coated on the surface of the substrate. According to the above object of the present invention, a thin film evaporation apparatus is proposed. The vapor deposition apparatus includes a first vacuum chamber, a first intake system, a first exhaust system, a carrier member, and an atomization device. The first air intake system is in communication with the first vacuum chamber and is adapted to direct a working gas into the first vacuum chamber. The first exhaust system is in communication with the first vacuum chamber and is adapted to evacuate the first vacuum chamber of the M426599. A load bearing member is adapted to load at least one of the substrates into the first vacuum chamber. The atomizing device is disposed in the first vacuum chamber and is adapted to atomize and vaporize a thin film coating solution into a plurality of thin film coatings and vapor molecules, and deposit on one surface of the at least one substrate - according to one of the novel In an embodiment, the thin film evaporation apparatus further includes a plasma device disposed in the first vacuum chamber and adapted to generate a plasma to perform a surface activation treatment on the surface of the at least one substrate. According to another embodiment of the present invention, the thin film evaporation apparatus further includes a plasma device disposed outside the first vacuum chamber, and is adapted to generate a plasma to perform the surface of the at least one substrate. A surface activation treatment in which the plasma is delivered to the first vacuum chamber through a transfer line. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes a pressure gauge disposed on the first vacuum chamber for measuring the pressure in the first vacuum chamber. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes a liquid storage tank adapted to store the thin film coating solution and supply the thin film coating solution φ to the atomizing device. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes a heater disposed in the first vacuum chamber to accelerate diffusion of the vapor of the film coating vapor in the first vacuum chamber. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes a heating device disposed on a cavity wall of the first vacuum chamber to heat the chamber wall. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes a spoiler disposed in the first vacuum chamber. According to still another embodiment of the present invention, the above-mentioned carrier member can be self-rotatingly M426599 or reproducibly disposed in the first vacuum chamber or the second vacuum chamber. According to the above object of the present invention, a thin film evaporation apparatus is further proposed. The thin film evaporation apparatus includes a first vacuum chamber, a first intake system, a first exhaust system, a carrier member, an atomizing skirt, and a first delivery line. The first air intake system is in communication with the first vacuum chamber and is adapted to direct a first working gas into the first vacuum chamber. The first exhaust system is in communication with the first vacuum chamber and is adapted to evacuate the first vacuum chamber. The carrier element is adapted to load at least one substrate to the first vacuum chamber. The atomizing device is disposed outside the first vacuum chamber and is adapted to atomize and vaporize a film coating solution into a plurality of film coating vapor molecules. The first transfer line communicates with the first vacuum chamber and the atomizing device and is adapted to transfer the film coating vapor molecules from the atomizing device into the first vacuum chamber and onto the surface of one of the at least one substrate. According to an embodiment of the present invention, the thin film evaporation apparatus further includes a plasma device disposed in the first vacuum chamber and adapted to generate a plasma to perform a surface activation treatment on the surface of the at least one substrate. . According to another embodiment of the present invention, the thin film evaporation apparatus further includes a plasma device disposed outside the first vacuum chamber and adapted to generate a plasma to perform surface activation treatment on the surface of the at least one substrate. The plasma is delivered to the first vacuum chamber through a second transfer line. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes: a first pressure gauge disposed on the first vacuum chamber and adapted to measure a pressure in the first vacuum chamber; and a liquid storage tank It is suitable for storing the film coating solution and supplying the film coating solution to the atomizing device. According to still another embodiment of the present invention, the film evaporation apparatus further includes M426599 comprising: a second vacuum chamber; a first gate valve is adapted to control communication between the second vacuum chamber and the first vacuum chamber; a second gate valve is adapted to control the switch of the at least one substrate entering the inlet of the second vacuum chamber; and a plasma device is disposed in the second vacuum chamber, adapted to generate a plasma to the aforementioned. at least one base The surface of the material is subjected to a surface activation treatment. According to still another embodiment of the present invention, the thin film evaporation apparatus further includes: a second air intake system connected to the second vacuum chamber, and adapted to introduce a 'second working gas into the second vacuum chamber; a second exhaust system is in communication with the first two vacuum chambers, and is adapted to perform a pumping process on the second vacuum chamber; and a second pressure gauge is disposed on the second vacuum chamber and is adapted to measure the second The pressure inside the vacuum chamber. Embodiments Please refer to FIG. 1 , which is a schematic diagram of an apparatus for a thin film evaporation apparatus according to an embodiment of the present invention. In the present embodiment, the thin film evaporation apparatus 200a may mainly include a vacuum chamber 202, an atomizing device 206, a φ exhaust system 208, an intake system 218, and a carrier member 210. The vacuum chamber 202 provides a sealed processing space for vapor deposition of the surface film of the substrate to be treated. The intake system 218 is in communication with the vacuum chamber 202 to load the desired working gas and process assist gas into the vacuum chamber 202. The exhaust system 208 is also in communication with the vacuum chamber 202, and the vacuum chamber 202 can be evacuated to evacuate excess working gas or exhaust gases out of the vacuum chamber 202. In addition, the exhaust system 208 is utilized to draw the gas within the vacuum chamber 202, thereby further reducing the pressure within the vacuum chamber 202, thereby providing the process pressure required for the vacuum chamber 202. The M426599 A material 210 is used to load one or more substrates 222 and transport the substrate 222 into the vacuum chamber 2G2, and the member 210 can be, for example, a carrier or a carrier. The component 21 can be a portion having an opening, and the portion of the bonding surface of the carrier member 21 and the carrier member 21 is not shielded by the member. Thus, the design can simultaneously perform a plurality of surfaces on the substrate 222. In an embodiment, the carrier member 210 is secured within the vacuum chamber 2〇2. In another embodiment, the carrier member 21 is configured to rotate in situ within the vacuum chamber 202, i.e., to rotate. In yet another embodiment, the carrier member 210 is configured to be rotatable within the vacuum chamber 2〇2 relative to other devices within the vacuum chamber 2〇2, i.e., revolving. Substrate 222 can be, for example, a protective glass, a plastic substrate, a tempered glass, or a metal substrate. In some examples, substrate 222 can be a sheet of a simple structure such as a glass sheet. In other examples, the substrate 222 can also be an article having a complex structure, such as a housing or a ball of an electronic component. In this embodiment, the atomizing device 206 is disposed within the vacuum chamber 202. The atomizing device 206 can be used to atomize the thin film coating solution 214 into a film coating mist 224, and even the film coating solution 214 can be vaporized into a plurality of film coating vapor molecules 226. These film coating vapor molecules 226 are deposited on the surface of the substrate 222 after contact with the substrate 222, thereby forming a film on the surface of all of the substrates 222. In some embodiments, the atomizing device 206 can be, for example, an ultrasonic atomizing device, a heated atomizing device, a high pressure spray device, or a nozzle atomizing device. The thin film coating solution 214 can comprise a thin film coating and a solvent. In some embodiments of M426599, the solvent of the film coating solution 214 preferably comprises, for example, a highly volatile liquid, water, or a liquid in which a highly volatile liquid and water are mixed. In one example, when the film coated on the surface of the substrate 222 is a non-staining film, the film coating of the film coating solution 214 contains an antifouling coating. The material of the antifouling coating may, for example, comprise a fluorocarbon hydrocarbon compound, a perfluorocarbon hydrocarbon compound, a fluorocarbon hydride hydrocarbon compound, a perfluoro decane hydrocarbon compound, a perfluoro decane hydrocarbon compound, and a gas-containing base. A fluorononane ether compound or a gas-containing perfluorodecane hydrocarbon compound.
在一些實施例中’高揮發性溶劑之性質為常溫下呈液 體狀態、具有穩定的化學結構、具有高揮發性、低沸點、 ，明無色、以及對生物無明顯傷害性的液體。在—較佳實 =例中，:揮發性液體在常溫下之蒸氣壓比水的蒸氣壓 錮、ΐ此向揮發性液體可選自於由醇類、醚類、烷類、酮 美類、含氟基醇類、含氟基醚類、含氟基院類、含氟 基_類與含氟基笨類所組成之一族群。 選摆1些實&例中’如第1圖所示’蒸鑛設備2·亦可 ΐ二 =;置204。電聚裝置204可用以產生電 與表面改質Ls =,來對絲222之表®進行清潔 =^中」電„置綱係設置在真空腔室搬内，而可 生之雷將至2G2内形成電Χ或離子源。電漿裝置204所產 波電ί =直嶋、交流電漿、脈衝電漿、高週 ’電漿裝置2G4用來產生離子源< 作乳體可包含氧氣㈣、氩氣㈣、氮氣(N2)、二氧化碳 M426599 (co2)、一氧化碳(co)、胺(Nh2)、空氣、氫氣(h2)、水氣、 或上述氣體之組合。在另一例子中，電漿裝置2〇4亦可直 接使用殘留在真空腔室202内的氣體來做為工作氣體。 . 在一示範實施例中，此電漿裝置204對基材222所進 .行之處理可例如分成二個階段，其中第一個階段為對基材 222表面之清潔處理，而第二個階段為對基材222之表面 改質處理。在此二處理階段，電漿裝置2〇4可使用不同之 工作氣體。舉例而言，當基材222為金屬時，在第一階段 φ 的電漿清潔處理中，電漿裝置204可使用氫氣來做為產生 電漿或離子源之工作氣體；而在第二階段之基材222表面 改質處理中，電漿裝置204則可使用水氣來做為產生電漿 或離子源之工作氣體。在另一些實施例中’電漿裝置204 亦可採用二種以上的工作氣體來對基材222表面進行電漿 處理。 在一例子中’基材222表面經電漿活化後，可在基材 222表面上形成數個官能基。經電漿處理後，基材222表 φ 面上所產生之官能基較佳係可以與後續形成之薄膜塗料蒸 氣分子226形成鍵結之官能基，例如包含氫氧官能基、氮 氫官能基、羧基、鹵素官能基、氫官能基及/或空懸鍵。 在另一實施例中’蒸鍍設備200a更可包含儲液桶 212。儲液桶212可儲放薄臈塗料溶液214。儲液桶212可 直接設置在霧化裝置206上，而直接提供薄膜塗料溶液214 予霧化裝置206。在其他例子中，儲液桶212與霧化裝置 206之間亦可藉由輸送管路232來加以連通，而藉由輸送 管路232可將薄膜塗料溶液214傳送至霧化裝置206。在 M426599 一些例子中，儲液桶2U與霧化敦置2〇6之間的輪送管路 232上更设有閥216 ’用以控制薄膜塗料溶液214從儲液桶 212至霧化裝置206的傳送。 . 在又一實施例中，蒸鍍設備2〇〇a亦可包含壓力叶 220。壓力計220可設於真空腔室202上，用以量測該真空 腔室202内之壓力。 Λ、工 此外，根據製程需求，蒸鍍设備2〇〇a可選擇性地包含 . 加熱器234，並利用加熱器234來提供適當輻射赦，以二 • 熱薄膜塗料霧氣224、薄膜塗料蒸氣分子226及/或額外加 入之輔助氣體。在一例子中，如第丨圖所示，藉由加熱器 234所提供之輻射熱，不僅可加速薄臈塗料霧氣224轉化 成薄膜塗料蒸氣分子226’更可增加薄膜塗料蒸氣分子226 與輔助氣體的擴散速率，而可進一步加速薄膜塗料蒸氣分 子226在真空腔室202中的擴散。此外，加熱器234所提 供之輻射熱亦可在薄膜塗料蒸氣分子226沉積過程中，加 速薄膜塗料蒸氣分子226與基材222之表面鍵結反應，縮 參 短’’儿積反應的時間。在一實施例中，加熱器234可例如使 真空腔室202内的溫度大於室溫，但小於2〇〇°C。 於一些實施例中，根據製程需求，蒸鍍設備200a亦可 選擇性地包含加熱裝置236。加熱裝置236可例如為加熱 絲或其内裝載有熱煤油之熱管。加熱裝置236較佳係設置 在真空腔室202外，例如加熱絲可貼設在真空腔室202之 腔壁的外侧面上，以避免薄膜塗料蒸氣分子226附著，更 可防止因熱管破損而導致熱油外漏進而對真空腔室202内 造成污染。在薄膜塗料蒸氣分子226沉積過程中，利用加 13 M426599 熱裝置236來加熱真空腔室202之腔壁，可減少薄膜塗料 蒸氣分子226附著在真空腔室202之腔壁内側面上。 在又一實施例中，根據製程需求，蒸鍍設備200a可進 一步包含擾流裝置252。其中，擾流裝置252同樣可設置 在真空腔室202中，例如真空腔室202之内側壁上。擾流 裝置252可在薄膜塗料蒸氣分子226沉積在基材222上之 前，先使分佈在真空腔室202内的薄膜塗料蒸氣分子226 更均勻地散佈於真空腔室202中。藉由擾流裝置252的運 作，不僅可使形成在基材222表面上的薄膜更為均勻，亦 使得蒸鍍設備200a可順利進行立體結構之各表面的薄膜 塗佈。 在蒸鍍設備200a中，電漿裝置204與霧化裝置206均 設置在真空腔室202内。本新型之蒸鍍設備的電漿裝置與 霧化裝置亦可設置在真空腔室外。在此種實施態樣中，電 漿裝置與霧化裝置先在真空腔室外分別形成電漿或離子 源、與薄膜塗料霧氣及/或薄膜塗料蒸氣分子，再分別藉由 連通電漿裝置與真空腔室、以及連通霧化裝置與真空腔室 的輸送管路，來分別將電漿或離子源、與薄膜塗料霧氣及/ 或薄膜塗料蒸氣分子傳送至真空腔體内。在另一些實施例 中，本新型之蒸鍍設備的電漿裝置與霧化裝置之一者可設 置在真空腔室内，而另一者則可設置在真空腔室外。 舉例而言，如第2圖所示，其係繪示依照本新型之另 一實施方式的一種薄膜蒸鍍設備的裝置示意圖。蒸鍍設備 200b的架構大致上與上述實施例之蒸鍍設備200a相同， 二蒸鍍設備200a與200b之間的差異在於蒸鍍設備200b之 14 霧化裝置206係設置於直* 與真空腔室奶之間更tΓ夕卜，且霧化裝置2〇6 ^ 9Π. . ^ ^ ^尺有輸迗管路230，以連通霧化裝 霧ϋ 2心；》二，至2〇2。藉由輸送管路230，可將薄膜塗料 至—5核塗料蒸氣分子226從霧化裝i2〇6傳送 给接至2〇2内。霧化裝置206與真空腔室202之間的 之m二冷230上5又有㈤228，以控制霧化裝置206所形成 之薄膜塗料霧氣224及/十# . 番士戈及/或溥膜塗料蒸氣分子226從霧化裝 置206至真空腔室2〇2的傳送。In some embodiments, the nature of the high volatility solvent is a liquid state at normal temperature, a stable chemical structure, a high volatility, a low boiling point, a clear colorless, and a liquid which is not significantly harmful to living organisms. In the preferred embodiment, the vapor pressure of the volatile liquid at normal temperature is higher than the vapor pressure of water, and the volatile liquid may be selected from the group consisting of alcohols, ethers, alkanes, ketones, and the like. A group consisting of a fluorine-containing alcohol, a fluorine-containing ether, a fluorine-containing compound, a fluorine-containing group, and a fluorine-containing group. Selecting some of the real & in the example ' as shown in Figure 1 'steaming equipment 2 · can also be ΐ 2 =; set 204. The electro-convergence device 204 can be used to generate electricity and surface modification Ls = to clean the watch о of the wire 222. The system is set in the vacuum chamber, and the thunder can be reached within 2G2. Forming an electric or ion source. The electric wave generated by the plasma device 204 ί = direct 嶋, alternating current plasma, pulsed plasma, high-cycle 'plasma device 2G4 is used to generate an ion source < the milk body may contain oxygen (four), argon Gas (4), nitrogen (N2), carbon dioxide M426599 (co2), carbon monoxide (co), amine (Nh2), air, hydrogen (h2), water vapor, or a combination of the above gases. In another example, the plasma device 2 The gas remaining in the vacuum chamber 202 can also be used directly as the working gas. In an exemplary embodiment, the processing of the substrate 222 by the plasma device 204 can be, for example, divided into two stages. The first stage is the cleaning treatment of the surface of the substrate 222, and the second stage is the surface modification treatment of the substrate 222. In the two processing stages, the plasma device 2〇4 can use different working gases. For example, when the substrate 222 is a metal, in the plasma cleaning process of the first stage φ, The slurry device 204 can use hydrogen as a working gas for generating a plasma or ion source; and in the second stage of the surface modification of the substrate 222, the plasma device 204 can use moisture to generate plasma or The working gas of the ion source. In other embodiments, the plasma device 204 may also use two or more working gases to plasma treat the surface of the substrate 222. In one example, the surface of the substrate 222 is plasma-activated. Thereafter, a plurality of functional groups may be formed on the surface of the substrate 222. After the plasma treatment, the functional groups generated on the surface of the substrate 222 may preferably be bonded to the subsequently formed thin film coating vapor molecules 226. The functional group, for example, includes a hydroxide functional group, a nitrogen hydrogen functional group, a carboxyl group, a halogen functional group, a hydrogen functional group, and/or an air dangling bond. In another embodiment, the vapor deposition apparatus 200a may further include a liquid storage tank 212. The liquid storage tank 212 can store the thin paint coating solution 214. The liquid storage tank 212 can be directly disposed on the atomizing device 206, and directly provide the thin film coating solution 214 to the atomizing device 206. In other examples, the liquid storage tank 212 and The atomizing device 206 can also be borrowed between The transfer line 232 is communicated, and the film coating solution 214 can be transferred to the atomizing device 206 by the transfer line 232. In some examples of the M426599, the wheel between the liquid storage tank 2U and the atomizing tank 2〇6 The delivery line 232 is further provided with a valve 216' for controlling the transfer of the thin film coating solution 214 from the reservoir 212 to the atomizing device 206. In still another embodiment, the vapor deposition apparatus 2a may also contain pressure. Leaf 220. A pressure gauge 220 may be disposed on the vacuum chamber 202 for measuring the pressure in the vacuum chamber 202. In addition, according to the process requirements, the vapor deposition apparatus 2〇〇a may optionally include Heater 234 is utilized and heater 234 is utilized to provide appropriate radiation enthalpy, thermal film coating mist 224, film coating vapor molecules 226, and/or additional auxiliary gases. In one example, as shown in the figure, the radiant heat provided by the heater 234 not only accelerates the conversion of the thin coating mist 224 into the film coating vapor molecules 226' but also increases the film coating vapor molecules 226 and the auxiliary gas. The rate of diffusion further accelerates the diffusion of the film coating vapor molecules 226 in the vacuum chamber 202. In addition, the radiant heat provided by the heater 234 can also accelerate the surface bonding reaction of the film coating vapor molecules 226 with the substrate 222 during the deposition of the film coating vapor molecules 226, thereby reducing the time of the short reaction. In one embodiment, heater 234 may, for example, cause the temperature within vacuum chamber 202 to be greater than room temperature, but less than 2 °C. In some embodiments, the evaporation apparatus 200a may also optionally include a heating device 236, depending on process requirements. The heating device 236 can be, for example, a heating wire or a heat pipe loaded with hot kerosene therein. The heating device 236 is preferably disposed outside the vacuum chamber 202. For example, the heating wire can be attached to the outer side surface of the cavity wall of the vacuum chamber 202 to avoid adhesion of the film coating vapor molecules 226, and to prevent damage caused by the heat pipe. The leakage of hot oil in turn causes contamination in the vacuum chamber 202. During the deposition of the film coating vapor molecules 226, the addition of the 13 M426599 thermal device 236 to heat the walls of the vacuum chamber 202 reduces the adhesion of the film coating vapor molecules 226 to the inner side of the chamber wall of the vacuum chamber 202. In yet another embodiment, the vapor deposition apparatus 200a may further include a spoiler 252, depending on process requirements. Therein, the spoiler 252 can also be disposed in the vacuum chamber 202, such as the inner sidewall of the vacuum chamber 202. The spoiler 252 spreads the thin film coating vapor molecules 226 distributed within the vacuum chamber 202 more evenly within the vacuum chamber 202 before the thin film coating vapor molecules 226 are deposited on the substrate 222. By the operation of the spoiler 252, not only the film formed on the surface of the substrate 222 can be made more uniform, but also the vapor deposition apparatus 200a can smoothly coat the film on each surface of the three-dimensional structure. In the vapor deposition apparatus 200a, both the plasma device 204 and the atomizing device 206 are disposed in the vacuum chamber 202. The plasma device and the atomizing device of the vapor deposition device of the present invention may also be disposed outside the vacuum chamber. In this embodiment, the plasma device and the atomizing device first form a plasma or ion source, a film coating mist and/or a film coating vapor molecule separately outside the vacuum chamber, and then connect the plasma device and the vacuum respectively. The chamber, and the transfer line connecting the atomizing device and the vacuum chamber, respectively deliver the plasma or ion source, and the film coating mist and/or the film coating vapor molecules into the vacuum chamber. In other embodiments, one of the plasma device and the atomizing device of the vapor deposition apparatus of the present invention may be disposed within the vacuum chamber while the other may be disposed outside of the vacuum chamber. For example, as shown in Fig. 2, it is a schematic view of a device of a thin film evaporation apparatus according to another embodiment of the present invention. The structure of the vapor deposition apparatus 200b is substantially the same as that of the vapor deposition apparatus 200a of the above embodiment, and the difference between the two evaporation apparatuses 200a and 200b is that the atomization apparatus 206 of the evaporation apparatus 200b is disposed in the straight* and vacuum chambers. The milk is more t-week, and the atomizing device 2〇6 ^ 9Π. . ^ ^ ^ has a feeding line 230 to connect the atomizing mist 2 heart; "2, to 2〇2. By means of the transfer line 230, the film coating to the -5 core coating vapor molecules 226 can be transferred from the atomizing unit i2 to the second unit. The second cooling 230 between the atomizing device 206 and the vacuum chamber 202 has (5) 228 to control the film coating mist 224 and/or #10 formed by the atomizing device 206. Fansgo and/or enamel coating The vapor molecules 226 are transferred from the atomizing device 206 to the vacuum chamber 2〇2.
胺沾t Ϊ施例中’利用蒸鍍設備2GGa或2_來進行薄 日，可先利用承栽元件21G %這些基材222傳送 系:二備2〇如或2〇〇b之真空腔室202 *。再利用排氣 ^ 2〇8對真空腔室202進行抽氣處理，以抽出真空腔室 内之氣體。經抽氣處理後，真空腔室2〇2内具有一壓 ^ ’例如小於9x10 W。此外，經抽氣處理後，真空腔室 2内可此仍具有-些殘留氣體，例如空氣或水氣等。In the case of the amine dip Ϊ ' ' 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用202 *. The vacuum chamber 202 is then evacuated by means of an exhaust gas ^ 2 〇 8 to extract the gas in the vacuum chamber. After evacuation, the vacuum chamber 2 〇 2 has a pressure ^ ', for example less than 9 x 10 W. Further, after the evacuation treatment, there may be some residual gas such as air or moisture in the vacuum chamber 2.
接下來，可根據製程需求，而先選擇性地利用電漿裝 置204所產生之電黎或離子源，來對基材222之表面進行 清潔與表面改質處理，藉以活化基材222之表面。利用電 漿裝置2〇4對基材m進行表面處理時，先透過進氣系統 218將工作氣體導入真空腔室2〇2中，再利用電漿裝置2〇4 來產生電漿或離子源電漿或離子源進行基材222表 面之清潔與活化處理。 接著’利用排氣系統208將真空腔室2〇2内的殘留氣 體抽出，並調整真空腔室2〇2内的壓力後，再利用霧化裝 置206來進行薄膜的蒸鍍。針對蒸鍍設備2〇〇a，可利用霧 M426599 . 化裝置206霧化薄獏塗料溶液214,以直接在真空腔室2〇2 内產生許多薄膜塗料霧氣224及/或薄膜塗料蒸氣分子 226。針對蒸錢設備2〇〇b，可先利用霧化裝置先於真 .空腔室2〇〇外產生薄臈塗料霧氣224及/或薄膜塗料蒸氣分 .子226，再透過傳輸管路230而將所產生之薄膜塗料霧氣 224及/或薄膜塗料蒸氣分子226傳輸至真空腔室202内。 由於薄膜塗料溶液214之溶劑可包含高揮發性溶劑及/ 或水，因此溶劑可帶動分子較大之薄臈塗料，而有助於將 鲁薄·料溶液214霧化轉化成薄膜塗料霧氣224。隨後， 因薄膜塗料霧氣224中之溶劑快速揮發，可使薄膜塗料霧 氣224變成薄膜塗料蒸氣分子226。此外由於真空腔室 202係-負壓腔至’因此薄膜塗料蒸氣分子226形成於真 空腔室202 β、或進入真空腔室2〇2内時，可快速擴散而 均勻分佈於整個真空腔室202内。再者，由於真空腔室2〇2 内之壓力較低，使得薄臈塗料蒸氣分子226可快速移動充 滿真空腔室202 ’提高鑛膜均勻性。 • 在另一實施例中’可在擴散薄膜塗料蒸氣分子226的 ，期間，另外利用進氣系統218將輔助氣體載入真空腔室202 卜以增加真空腔室202内之所有氣體的碰撞頻率，藉以 加速薄膜塗料蒸氣分子226的擴散。 由於基材222之表面已先經電毁活化而具有官能基， 因此均勻分佈在真空腔室202内之薄膜塗料蒸氣分子226 會以非等向性的方式接觸且附著於基材222之表面，並與 基材222表面上之官能基產生縮合反應（c〇ndensati〇n Reaction)。藉由這樣的縮合反應，鍍覆在基材瓜表面上 M426599 的薄膜可穩固地附著於基材222上，而完成基材222表面 的鍍膜程序。 本新型之薄膜蒸鍍設備亦可為連續式真空蒸鍍系統。 請參照第3圖，其係繪示依照本新型之又一實施方式的一 種薄膜蒸鍍設備的裝置示意圖。不同於上述第1圖與第2 圖所示之薄膜蒸鍍設備200a與200b，本實施方式之薄膜 蒸鍍設備200c的霧化裝置206與電漿裝置204係分別設於 二真空腔室202與240之中。 在薄膜蒸鍍設備200c中，承載元件210搭配滚輪238 等傳送元件，來運送基材222。基材222亦可以吊掛方式， 設置在承載元件210之下方，此時滚輪238與基材222在 承載元件21〇上的位置錯開，以避免互相干擾。薄膜蒸鍍 設備20〇c之真空腔室24〇設於真空腔室202之前方。此二 真空腔室202與240之間設有閘閥250，可用以控制此二 真空腔室202與240之間的連通。此外，真空腔室240之 入口亦設有閘閥248。透過此閘閥248，可控制真空腔室 240之入口的開關，進一步控制基材222是否可進入真空 腔室240。 真空腔室240可提供密閉的處理空間，來進行待處理 基材之表面處理。薄膜蒸鍍設備2〇〇c更包含進氣系統242 與排氣系統246。進氣系統242與真空腔室240連通，而 可將所需之工作氣體載入真空腔室240内。排氣系統246 亦與真空腔室240連通，而可對真空腔室240進行抽氣處 理’以將多餘的工作氣體或廢氣排出真空腔室240。此外， 同樣可利用排氣系統246來將真空腔室240内之氣體抽 M426599 出’藉此降低真空腔室240内的壓力’進而提供真空腔室 240所需之製程壓力。根據製程需求，真空腔室240亦可 配置有壓力計244。廢力計244可設於真空腔室240上， 用以量測該真空腔室240内之壓力。Next, the surface of the substrate 222 may be cleaned and surface modified to selectively activate the surface of the substrate 222 by selectively utilizing the electrical or ion source generated by the plasma device 204, depending on process requirements. When the substrate m is surface-treated by the plasma device 2〇4, the working gas is first introduced into the vacuum chamber 2〇2 through the intake system 218, and then the plasma device 2〇4 is used to generate the plasma or ion source. The slurry or ion source is used to clean and activate the surface of the substrate 222. Next, the residual gas in the vacuum chamber 2〇2 is extracted by the exhaust system 208, and the pressure in the vacuum chamber 2〇2 is adjusted, and then the atomization device 206 is used to perform vapor deposition of the film. For the vapor deposition apparatus 2A, the thinning coating solution 214 can be atomized by means of a mist M426599 to produce a plurality of film coating mists 224 and/or film coating vapor molecules 226 directly in the vacuum chamber 2〇2. For the steaming device 2〇〇b, the atomizing device can be used to generate the thin coating mist 224 and/or the film coating vapor portion 226 outside the chamber 2, and then through the transmission line 230. The resulting film coating mist 224 and/or film coating vapor molecules 226 are transferred to vacuum chamber 202. Since the solvent of the thin film coating solution 214 can contain a highly volatile solvent and/or water, the solvent can drive the larger thin coating of the molecules, and help to atomize the thin solution 214 into the film coating mist 224. Subsequently, the film coating mist 224 becomes a film coating vapor molecule 226 due to the rapid evaporation of the solvent in the film coating mist 224. In addition, since the vacuum chamber 202 is a negative pressure chamber to 'therefore the thin film coating vapor molecules 226 are formed in the vacuum chamber 202 β or into the vacuum chamber 2〇2, they can be rapidly diffused and uniformly distributed throughout the vacuum chamber 202. Inside. Moreover, due to the lower pressure within the vacuum chamber 2〇2, the thin coating vapor molecules 226 can rapidly move to fill the vacuum chamber 202' to increase the uniformity of the film. • In another embodiment, during the diffusion of the thin film coating vapor molecules 226, an auxiliary gas is additionally loaded into the vacuum chamber 202 by the intake system 218 to increase the collision frequency of all gases within the vacuum chamber 202, Thereby accelerating the diffusion of the film coating vapor molecules 226. Since the surface of the substrate 222 has been functionalized by electrolysis, the film coating vapor molecules 226 uniformly distributed in the vacuum chamber 202 are contacted in an anisotropic manner and attached to the surface of the substrate 222. And a condensation reaction with a functional group on the surface of the substrate 222 (c〇ndensati〇n Reaction). By such a condensation reaction, the film of M426599 plated on the surface of the substrate can be firmly adhered to the substrate 222, and the coating process on the surface of the substrate 222 is completed. The film evaporation apparatus of the present invention can also be a continuous vacuum evaporation system. Please refer to FIG. 3, which is a schematic diagram of a device of a thin film evaporation apparatus according to still another embodiment of the present invention. Different from the thin film vapor deposition apparatuses 200a and 200b shown in the first and second figures, the atomizing device 206 and the plasma device 204 of the thin film vapor deposition apparatus 200c of the present embodiment are respectively disposed in the two vacuum chambers 202 and Among 240. In the thin film evaporation apparatus 200c, the carrier member 210 is transported with a transfer member such as a roller 238 to transport the substrate 222. The substrate 222 can also be placed under the carrier member 210 in a hanging manner, in which case the position of the roller 238 and the substrate 222 on the carrier member 21 is staggered to avoid mutual interference. The vacuum chamber 24 of the thin film evaporation apparatus 20〇c is disposed in front of the vacuum chamber 202. A gate valve 250 is provided between the two vacuum chambers 202 and 240 to control the communication between the two vacuum chambers 202 and 240. In addition, a gate valve 248 is also provided at the inlet of the vacuum chamber 240. Through the gate valve 248, the switch of the inlet of the vacuum chamber 240 can be controlled to further control whether the substrate 222 can enter the vacuum chamber 240. The vacuum chamber 240 provides a closed processing space for surface treatment of the substrate to be treated. The thin film evaporation apparatus 2〇〇c further includes an intake system 242 and an exhaust system 246. Intake system 242 is in communication with vacuum chamber 240 to load the desired working gas into vacuum chamber 240. The exhaust system 246 is also in communication with the vacuum chamber 240, and the vacuum chamber 240 can be evacuated to discharge excess working gas or exhaust gases out of the vacuum chamber 240. In addition, the exhaust system 246 can also be utilized to draw the gas in the vacuum chamber 240 out of the 'by thereby reducing the pressure within the vacuum chamber 240' to provide the process pressure required for the vacuum chamber 240. The vacuum chamber 240 can also be configured with a pressure gauge 244, depending on process requirements. A waste force meter 244 can be disposed on the vacuum chamber 240 for measuring the pressure within the vacuum chamber 240.
利用蒸鍍設備200c來進行薄膜的塗佈時，先以承載元 件210與滾輪238來運送基材222。而後，打開閘閥248， 以開啟真空腔室240 ’藉以使得承載元件210與滾輪238 可將基材222載入真空腔室240中。接下來，先關閉閘閥 248，再利用排氣系統246來對真空腔室240進行抽氣處 理。經抽氣處理後，真空腔室24〇内具有一壓力，例如小 於9χ1〇Λοιτ。此外，經抽氣處理後，真空腔室24〇内可能 仍具有一些殘留氣體，例如空氣或水氣等。 接下來，利用電漿裝置204所產生之電漿或離子源， 來對基材222之表面進行清潔與表面改質處理，藉以活化 基材222之表面。對基材222進行表面處理時，先透過進 氣系統242將工作氣體導入真空腔室24〇中，再利用電槳 裝置204來產生電漿或離子源，而以電漿或離子源進行基 材222表面之清潔與活化處理。 類似於在真空腔室202内的設置，承載元件21〇在真 空腔室240内亦可有多種設計。在—實施例中，承載元件 21 〇在真空腔至240内係固定的。在另一實施例中，承載 元件210 β又置成可在真空腔室240内原地旋轉，亦即自轉。 在又-實施例中，承載元件21〇設置成可在真 内相對於真空腔室24〇内的其他裝置旋轉，，恥至Ml) 接著，打開閘閥25〇，並利用承載元方即公轉。 210與凌輪238 M426599 將基材222載入真空腔室202中。而後，關閉閘閥250， 並利用排氣系統208將真空腔室202内的殘留氣體抽出， 同時調整真空腔室202内的壓力。然後，利用霧化裝置206 來進行薄膜的蒸鑛。利用霧化裝置206霧化從儲液桶212 . 傳來之薄膜塗料溶液214，而直接在真空腔室202内產生 許多薄膜塗料霧氣224及/或薄膜塗料蒸氣分子226。 由於真空腔室202係一負壓腔室，因此薄膜塗料蒸氣 分子226形成於真空腔室202内時，可快速擴散而均勻分 • 佈於整個真空腔室202内。此外，由於真空腔室2〇2内之 壓力較低’使得薄膜塗料蒸氣分子226可快速移動充滿真 空腔室202，提高鍍膜均勻性。 同樣地，另一實施例可在擴散薄膜塗料蒸氣分子226 的期間，另外利用進氣系統218將辅助氣體載入真空腔室 202中，以增加真空腔室202内之所有氣體的碰撞頻率， 藉以加速薄膜塗料蒸氣分子226的擴散。 由於基材222之表面已先經電漿活化而具有官能基， φ 因此均勻分佈在真空腔室202内之薄膜塗料蒸氣分子226 會以非等向性的方式接觸且附著於基材222之表面，並與 基材222表面上之官能基產生縮合反應。如此，即可在基 材222表面上形成穩固附著的薄膜，而完成基材222表面 的鍍臈程序。 在本新型之其他實施態樣中，連續式之薄膜蒸鑛設備 的霧化裝置206與電漿裝置204亦可分別設於二真空腔室 202與240之外，再透過輸送管路來分別將薄膜塗料霧氣 及/或薄膜塗料蒸氣分子、與電漿或離子源傳送至真空腔體 19 M426599 202與240内。在另一些實施態樣中，本新型之連續式薄 膜蒸鍍設備的電漿裝置與霧化裝置之一者可設置在真空腔 室内，而另一者則可設置在真空腔室外。 • 由上述本新型之實施方式可知，本新型之一優點就是 • 因為運用本新型之薄膜蒸鍍設備，可在同一真空腔室中臨 場進行基材表面的清潔、改質與鍍膜，因此可提高製程的 可靠度，並可縮短製程時間。 ' 由上述本新型之實施方式可知，本新型之另一優點就 φ 是因為本新型之薄膜蒸鍍設備可使薄膜塗料蒸氣分子擴散 於真空腔室内，因此可進行無方向性的鍍膜，如此一來可 進行具複雜結構之基材的表面鍍膜處理。 由上述本新型之實施方式可知，本新型之又一優點就 是因為本新型之薄膜蒸鍍設備可使薄膜塗料蒸氣分子均勻 散佈於真空腔室内，因此可一次進行大量基材之表面鍍膜 處理。 由上述本新型之實施方式可知，本新型之再一優點就 φ 是因為本新型之薄膜蒸鍍設備無需如習知加熱蒸鍍設備需 高度真空的反應室，因此可大幅降低製程成本。 由上述本新型之實施方式可知，本新型之再一優點就 是因為本新型之薄膜蒸鍍設備之真空腔室内的壓力高於習 知加熱蒸鍍製程之真空腔室，因此薄膜塗料蒸氣分子在真 空腔室内之碰撞頻率較高，使得薄膜塗料蒸氣分子可快速 移動充滿真空腔室，而可提高真空腔室内之薄膜塗料蒸氣 分子的均勻度，進而可增進基材之表面上所鑛覆之薄膜的 厚度均勻性。 M426599 雖然本新型已以實施方式揭露如上，然其並非用以限 定本新型，任何在此技術領域中具有通常知識者，在不脫 離本新型之精神和範圍内，當可作各種之更動與潤飾，因 • 此本新型之保護範圍當視後附之申請專利範圍所界定者為 . 準。 【圖式簡單說明】 為讓本新型之上述和其他目的、特徵、優點與實施例 Φ 能更明顯易懂，所附圖式之說明如下： 第1圖係繪示依照本新型之一實施方式的一種薄膜蒸 鍍設備的裝置示意圖。 第2圖係繪示依照本新型之另一實施方式的一種薄膜 蒸鍍設備的裝置示意圖。 第3圖係繪示依照本新型之又一實施方式的一種薄膜 蒸鍍設備的裝置示意圖。 # 【主要元件符號說明】 200a :蒸鍍設備 200c :蒸鍍設備 204 :電漿裝置 208 :排氣系統 212 :儲液桶 216 :閥 220 :壓力計 224 :薄膜塗料霧氣 200b :蒸鍍設備 202 :真空腔室 206 :霧化裝置 210 :承載元件 214 :薄膜塗料溶液 218 :進氣系統 222 :基材 226 :薄膜塗料蒸氣分子 21 M426599 228 :閥 230 232 :輸送管路 234 236 :加熱裝置 238 240 :真空腔室 242 244 :壓力計 246 248 :閘閥 250 252 :擾流裝置 輸送管路 加熱器 滾輪 進氣系統 排氣系統 閘閥When the film is applied by the vapor deposition device 200c, the substrate 222 is first transported by the carrier member 210 and the roller 238. The gate valve 248 is then opened to open the vacuum chamber 240' so that the carrier member 210 and the roller 238 can load the substrate 222 into the vacuum chamber 240. Next, the gate valve 248 is first closed, and the evacuation system 246 is used to evacuate the vacuum chamber 240. After evacuation, the vacuum chamber has a pressure within 24 Torr, for example, less than 9 χ 1 〇Λ οιτ. In addition, after evacuation, there may still be some residual gas in the vacuum chamber 24, such as air or moisture. Next, the surface of the substrate 222 is cleaned and surface modified by the plasma or ion source generated by the plasma device 204 to activate the surface of the substrate 222. When the substrate 222 is surface-treated, the working gas is first introduced into the vacuum chamber 24 through the inlet system 242, and then the electric paddle 204 is used to generate a plasma or ion source, and the plasma or ion source is used as the substrate. 222 surface cleaning and activation treatment. Similar to the arrangement within the vacuum chamber 202, the carrier member 21 can have a variety of designs within the vacuum chamber 240. In the embodiment, the carrier member 21 is fixed within the vacuum chamber to 240. In another embodiment, the carrier element 210 is again placed to rotate in situ within the vacuum chamber 240, i.e., to rotate. In a further embodiment, the carrier element 21 is arranged to be rotatable relative to other means within the vacuum chamber 24, in the true state, shame to Ml). Next, the gate valve 25 is opened and revolved using the carrier element. 210 and the wheel 238 M426599 load the substrate 222 into the vacuum chamber 202. Thereafter, the gate valve 250 is closed, and the residual gas in the vacuum chamber 202 is withdrawn by the exhaust system 208 while the pressure in the vacuum chamber 202 is adjusted. The atomization device 206 is then used to carry out the vaporization of the film. The film coating solution 214 from the reservoir 212 is atomized by the atomizing device 206, and a plurality of film coating mists 224 and/or film coating vapor molecules 226 are produced directly in the vacuum chamber 202. Since the vacuum chamber 202 is a negative pressure chamber, the thin film coating vapor molecules 226 are rapidly diffused and evenly distributed throughout the vacuum chamber 202 when they are formed in the vacuum chamber 202. In addition, since the pressure in the vacuum chamber 2〇2 is low, the film coating vapor molecules 226 can be quickly moved to fill the true cavity 202, improving coating uniformity. Likewise, another embodiment may utilize an intake system 218 to load an auxiliary gas into the vacuum chamber 202 during diffusion of the thin film coating vapor molecules 226 to increase the collision frequency of all gases within the vacuum chamber 202. Accelerate the diffusion of the film coating vapor molecules 226. Since the surface of the substrate 222 has been first activated by plasma to have a functional group, the film coating vapor molecules 226 uniformly distributed in the vacuum chamber 202 are contacted in an anisotropic manner and attached to the surface of the substrate 222. And a condensation reaction with a functional group on the surface of the substrate 222. Thus, a firmly adhered film can be formed on the surface of the substrate 222 to complete the ruthenium plating process on the surface of the substrate 222. In other embodiments of the present invention, the atomizing device 206 and the plasma device 204 of the continuous film vapour distillation apparatus may also be disposed outside the two vacuum chambers 202 and 240, respectively, and then through the conveying pipeline to respectively The film coating mist and/or film coating vapor molecules, and the plasma or ion source are delivered to the vacuum chamber 19 M426599 202 and 240. In other embodiments, one of the plasma device and the atomizing device of the continuous film evaporation apparatus of the present invention may be disposed in a vacuum chamber while the other may be disposed outside the vacuum chamber. • According to the embodiment of the present invention described above, one of the advantages of the present invention is that, by using the thin film evaporation device of the present invention, the surface of the substrate can be cleaned, modified and coated in the same vacuum chamber, thereby improving Process reliability and process time can be reduced. According to the embodiment of the present invention, another advantage of the present invention is that φ is because the thin film evaporation device of the present invention can diffuse vapor molecules of the film coating into the vacuum chamber, so that non-directional coating can be performed. It can be used for surface coating of substrates with complex structures. According to the embodiment of the present invention, another advantage of the present invention is that the thin film evaporation device of the present invention can uniformly distribute the vapor molecules of the film coating in the vacuum chamber, so that the surface coating treatment of a large number of substrates can be performed at one time. According to the embodiment of the present invention described above, a further advantage of the present invention is that φ is because the thin film evaporation apparatus of the present invention does not require a reaction chamber of a high vacuum as is conventionally known for heating an evaporation apparatus, thereby greatly reducing the process cost. According to the embodiment of the present invention, another advantage of the present invention is that since the pressure in the vacuum chamber of the thin film evaporation device of the present invention is higher than the vacuum chamber of the conventional heating evaporation process, the vapor of the film coating vapor is in a vacuum. The collision frequency in the chamber is relatively high, so that the vapor molecules of the film coating can be quickly moved to fill the vacuum chamber, and the uniformity of the vapor molecules of the film coating in the vacuum chamber can be improved, thereby enhancing the film deposited on the surface of the substrate. Thickness uniformity. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of this new type is defined as the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects, features, advantages and embodiments of the present invention Φ more obvious, the description of the drawings is as follows: FIG. 1 is a diagram showing an embodiment according to the present invention. A schematic diagram of a device for a thin film evaporation apparatus. Fig. 2 is a schematic view showing the apparatus of a thin film evaporation apparatus according to another embodiment of the present invention. Fig. 3 is a schematic view showing the apparatus of a thin film evaporation apparatus according to still another embodiment of the present invention. # [Main component symbol description] 200a: vapor deposition device 200c: vapor deposition device 204: plasma device 208: exhaust system 212: liquid storage tank 216: valve 220: pressure gauge 224: film coating mist 200b: vapor deposition device 202 Vacuum chamber 206: atomizing device 210: bearing member 214: film coating solution 218: air intake system 222: substrate 226: film coating vapor molecule 21 M426599 228: valve 230 232: delivery line 234 236: heating device 238 240: vacuum chamber 242 244: pressure gauge 246 248: gate valve 250 252: spoiler delivery line heater roller intake system exhaust system gate valve
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