CN110218988A - AR membrane preparation device, AR membrane preparation method and AR film - Google Patents
AR membrane preparation device, AR membrane preparation method and AR film Download PDFInfo
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- CN110218988A CN110218988A CN201910498875.1A CN201910498875A CN110218988A CN 110218988 A CN110218988 A CN 110218988A CN 201910498875 A CN201910498875 A CN 201910498875A CN 110218988 A CN110218988 A CN 110218988A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Abstract
The present invention provides a kind of AR membrane preparation device, AR membrane preparation method and AR films, it is related to AR film technology for producing field, AR membrane preparation device provided by the invention includes shell, heating dish and radio frequency source, and shell has air inlet and gas outlet, and air inlet enters for reaction gas, gas outlet with pumped vacuum systems for being connected to, heating dish is set in shell, and heating dish is used for carrying substrates, so that substrate is lain against in heating dish, radio frequency source and cage connection, with ionization reaction gas.When in use, substrate can directly be laid flat to heating dish AR membrane preparation device provided by the invention, eliminate the trouble fixed using adhesive tape or fixture, can easily be loaded and unloading substrate.Meanwhile because not introducing resin film or adhesive tape, substrate can be heated at high temperature, form a film closely knit, have more preferably scratch resistant performance.
Description
Technical field
The present invention relates to AR film technology for producing fields, more particularly, to a kind of AR membrane preparation device, the film preparation side AR
Method and AR film.
Background technique
AR film is known as antireflective coating, or also known as anti-reflection film, it be at present it is most widely used, the maximum one kind of yield is optically thin
Film.
When in use, substrate mostly uses to be placed vertically existing sputter coating machine, and for needing whole face plated film, (edge cannot have different
Color) product can the sticking adhesive tape of apparatus adhere to substrate back, it has not been convenient to load and unloading substrate, and will lead to can not be right
Substrate increases temperature, forms a film phenomena such as not so dense, influences damage resistant effect.
Summary of the invention
The purpose of the present invention is to provide a kind of AR membrane preparation device, facilitate loading and the unloading of substrate, and can be right
Substrate is heated at high temperature, and forms a film closely knit, has more preferably scratch resistant performance, in addition provides a kind of AR membrane preparation method and AR
Film.
To achieve the above object, the present invention the following technical schemes are provided:
In a first aspect, the present invention provides a kind of AR membrane preparation device, including shell, heating dish and radio frequency source, the shell
With air inlet and gas outlet, the air inlet enters for reaction gas, and the gas outlet is used to connect with pumped vacuum systems
Logical, the heating dish is set in the shell, and the heating dish is used for carrying substrates, so that the substrate lies against the heating
On disk, the radio frequency source and the cage connection, to ionize the reaction gas.
Further, the AR membrane preparation device further includes the rotating mechanism on the shell, the rotating mechanism
It is connect with the heating dish, for driving the heating dish to rotate.
Second aspect, the present invention also provides a kind of AR membrane preparation methods, comprising:
Baking procedure: substrate is laid flat to vacuum cavity, and is toasted to the substrate；
Silicon nitride film deposition step: being passed through silane and ammonia into vacuum cavity and ionized, so that the substrate table
Face deposits silicon nitride film；
Silicon dioxide film deposition step: being passed through silane and nitrous oxide into vacuum cavity and ionized, so that institute
It states substrate surface and deposits silicon dioxide film；
Alternating deposit step: the alternately described silicon nitride film deposition step and the silicon dioxide film deposition step.
Further, in the baking procedure, comprising:
200-500 DEG C is set as to the baking temperature of the substrate.
Further, in the baking procedure, comprising:
The substrate is lain on heating platform, the substrate is toasted by the heating platform.
Further, in the silicon nitride film deposition step, the flow of the silane is 5-50sccm, the ammonia
Flow be 5-50sccm.
Further, in the silicon nitride film deposition step, further includes:
It is passed through nitrogen into the vacuum cavity, using the carrier gas as reaction.
Further, in the silicon dioxide film deposition step, when being passed through silane and nitrous oxide and ionized
When, the flow of the silane is 5-50sccm, and the flow of the nitrous oxide is greater than 0sccm and is less than 2000sccm.
Further, in the silicon nitride film deposition step and the silicon dioxide film deposition step, further includes:
Uninterruptedly rotate the substrate.
The third aspect, the present invention also provides a kind of AR films, comprising: the side of substrate, the substrate is equipped with multilayer titanium dioxide
Silicon fiml and nitride multilayer silicon fiml, the silicon dioxide film and the silicon nitride film are alternately stacked, in which:
Along far from the substrate direction, the film thickness of the silicon dioxide film be respectively 97.06-99.06nm,
39.92-41.92nm, 11.51-13.51nm, 103-105nm, 37.36-39.36nm, 85.72-87.72nm；
Along the direction far from the substrate, the film thickness of the silicon nitride film is respectively 12.86-14.86nm, 82.22-
84.22nm, 38.65-40.65nm, 15.76-17.76nm, 72.42-74.42nm.
AR membrane preparation device, AR membrane preparation method and AR film provided by the invention can generate it is following the utility model has the advantages that
When stating AR membrane preparation device in use, substrate is laid flat to heating dish, heating dish heats substrate, instead
Answer gas to enter in shell by air inlet, and ionized under the action of radio frequency source, be partially formed plasma, wait from
Daughter mutually reacts, to go out desired film in deposition on substrate, pumped vacuum systems can will be anti-in the process
It answers exhaust gas to be discharged and guarantees the vacuum degree of housing interior volume.
For compared with the existing technology, when in use, substrate can for the AR membrane preparation device that first aspect present invention provides
It directly lays flat to heating dish, eliminates the trouble fixed using adhesive tape or fixture, easily can load and unload base
Piece.Meanwhile because not introducing resin film or adhesive tape, substrate can be heated at high temperature, form a film closely knit, have more preferably
Scratch resistant performance.
For compared with the existing technology, the AR membrane preparation method that second aspect of the present invention provides is with chemical vapor deposition
Principle, the phenomenon for effectively avoiding idea bad, finish are obviously improved.And substrate is directly lain in vacuum cavity,
Substrate size is unrestricted, eliminates the trouble fixed using adhesive tape or fixture, can be heated at high temperature to substrate, form a film
It is closely knit, have more preferably scratch resistant performance.
For compared with the existing technology, the AR film that third aspect present invention provides has lower in visible spectral range
Reflectivity, performance is more preferably.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of AR membrane preparation device provided in an embodiment of the present invention；
Fig. 2 is a kind of AR membrane preparation method that the embodiment of the present invention one provides；
Fig. 3 is a kind of AR membrane preparation method provided by Embodiment 2 of the present invention；
Fig. 4 is the structural schematic diagram of AR film provided in an embodiment of the present invention；
Fig. 5 is the curve graph of AR film reflectivity under certain wavelength provided in an embodiment of the present invention.
Icon: 1- shell；2- heating dish；3- radio frequency source；4- substrate；5- rotating mechanism；6- silicon dioxide film；
61- first layer silicon dioxide film；62- second layer silicon dioxide film；63- third layer silicon dioxide film；The 4th layer of dioxy of 64-
SiClx film；65- layer 5 silicon dioxide film；66- layer 6 silicon dioxide film；7- silicon nitride film；71- first layer silicon nitride
Film；72- second layer silicon nitride film；73- third layer silicon nitride film；The 4th layer of silicon nitride film of 74-；75- layer 5 silicon nitride
Film.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Fig. 1 is the structural schematic diagram of AR membrane preparation device provided in an embodiment of the present invention；Fig. 2 is that the embodiment of the present invention one mentions
A kind of AR membrane preparation method supplied；Fig. 3 is a kind of AR membrane preparation method provided by Embodiment 2 of the present invention；Fig. 4 is that the present invention is real
The structural schematic diagram of the AR film of example offer is provided；Fig. 5 is the song of AR film reflectivity under certain wavelength provided in an embodiment of the present invention
Line chart.
The embodiment of first aspect present invention is to provide a kind of AR membrane preparation device, as shown in Figure 1, including shell 1, adding
Hot plate 2 and radio frequency source 3, shell 1 have air inlet and gas outlet, air inlet for reaction gas enter, gas outlet for
Pumped vacuum systems connection, heating dish are set in shell 1, and heating dish 2 is used for carrying substrates 4, so that substrate 4 lies against heating dish 2
On, radio frequency source 3 is connect with shell 1, with ionization reaction gas.
When stating AR membrane preparation device in use, substrate is laid flat to heating dish, heating dish heats substrate, instead
Answer gas to enter in shell by air inlet, and ionized under the action of radio frequency source, be partially formed plasma, wait from
Daughter mutually reacts, to go out desired film in deposition on substrate, pumped vacuum systems can will be anti-in the process
It answers exhaust gas to be discharged and guarantees the vacuum degree of housing interior volume.
For compared with the existing technology, the AR membrane preparation device that the embodiment of first aspect present invention provides when in use,
Substrate can directly be laid flat to heating dish, eliminated the trouble fixed using adhesive tape or fixture, can easily be loaded
And unloading substrate.Meanwhile because not introducing resin film or adhesive tape, substrate can be heated at high temperature, be formed a film closely knit, tool
Standby more preferably scratch resistant performance.
In some embodiments, as shown in Figure 1, in order to enable each tunic can be more uniform be distributed in substrate surface,
AR membrane preparation device further includes the rotating mechanism 5 on shell 1, and rotating mechanism 5 is connect with heating dish 2, for driving heating
Disk 2 rotates.
Specifically, the pivot center of heating dish 2 is parallel to horizontal plane perpendicular to horizontal plane, the loading end of heating dish, so that
Obtain the carrying substrates 4 that heating dish can be stable.
It should be noted that all structures for being able to drive the rotation of heating dish 2 can be mentioned by above-described embodiment
Rotating mechanism 5, such as: rotating mechanism 5 can be rotary electric machine or rotating mechanism can be hydraulic cylinder, pneumatic cylinder or straight
The combination of line motor and other drive mechanisms, drive mechanism are used for the linear motion of hydraulic cylinder, pneumatic cylinder or linear motor
It converts to rotary motion.
Wherein, as shown in Figure 1, radio frequency source 3 can be set to the top of heating dish 2, so that work of the reaction gas in radio frequency source
It can be preferably deposited on substrate with the substance that lower reaction generates.
When in use, substrate 4 is laid flat to heating dish first, heating dish toasts substrate 4, baking temperature setting
It is 300 DEG C, then to being passed through silane, ammonia and nitrogen in shell 1 and being ionized, so that substrate surface deposits silicon nitride
Film；Then to being passed through silane and nitrous oxide in shell 1 and being ionized, so that 4 surface of substrate deposits silica
Film；Last alternately silicon nitride film deposition step and silicon dioxide film deposition step, form the AR film of multilayer.In the above process
Reactor off-gas can be discharged and be guaranteed the vacuum degree of housing interior volume by middle pumped vacuum systems.
The embodiment of second aspect of the present invention is to provide a kind of AR membrane preparation method, as shown in Figures 2 and 3, comprising:
Baking procedure: substrate 4 is laid flat to vacuum cavity, and is toasted to substrate 4；
Silicon nitride film deposition step: being passed through silane and ammonia into vacuum cavity and ionized, so that 4 surface of substrate is heavy
Product goes out silicon nitride film；
Silicon dioxide film deposition step: it is passed through silane and nitrous oxide into vacuum cavity and is ionized, so that base
4 surface of piece deposits silicon dioxide film；
Alternating deposit step: alternately silicon nitride film deposition step and silicon dioxide film deposition step.
For compared with the existing technology, the AR membrane preparation method that the embodiment of second aspect of the present invention provides is with chemical gas
Mutually the principle of deposition, the phenomenon for effectively avoiding idea bad, finish are obviously improved.And substrate directly lies in vacuum
In cavity, substrate size is unrestricted, eliminates the trouble fixed using adhesive tape or fixture, can carry out high temperature to substrate and add
Heat forms a film closely knit, has more preferably scratch resistant performance.
Wherein, in baking procedure, 200-500 DEG C is set as to the baking temperature of substrate 4.
Specifically, in baking procedure, 200 DEG C, 300 DEG C, 500 DEG C can be set as to the baking temperature of substrate 4.
In at least one embodiment, in baking procedure, 300 DEG C are set as to the baking temperature of substrate 4.
Wherein, in baking procedure, further includes: lie in substrate 4 on heating platform, by heating platform to substrate 4
It is toasted.Heating platform can not only be supported substrate 4, additionally it is possible to heat to substrate 4, be more convenient operating personnel
Use.
Heating platform may include supporting bable tops and the heater strip that connect with supporting bable tops, and supporting bable tops are horizontal positioned,
Substrate can be heated after facilitating carrying substrates, heater strip to be powered.
Wherein, in silicon nitride film deposition step, the flow of silane is 5-50sccm, and the flow of ammonia is 5-
50sccm。
Specifically, the flow of silane can be 5sccm, 11sccm, 50sccm, the flow of ammonia can for 5sccm,
10sccm、50sccm。
In at least one embodiment, in order to enable the obtained silicon nitride of deposition it is thin performance it is more preferable, the flow of silane is
11sccm, the flow of ammonia are 10sccm.
Wherein, in silicon nitride film deposition step, further includes: nitrogen is passed through into vacuum cavity, using the load as reaction
Gas.
Under the action of radio frequency, silane and the ammonia with nitrogen as carrier gas form plasma, concurrent biochemical anti-
Silicon nitride and hydrogen should be generated.Wherein silicon nitride becomes solid phase by gas phase, uniformly, slowly deposits on substrate, forms nitridation
Silicon fiml, and hydrogen is directly evacuated system discharge vacuum cavity.
Specifically, the flow of nitrogen is 800-2500sccm.More specifically, the flow of nitrogen can for 800sccm,
1240sccm、2500sccm。
In at least one embodiment, the flow of nitrogen is 1240sccm.
In silicon dioxide film deposition step, when being passed through gas is silane and nitrous oxide, under action of radio, silicon
Alkane and nitrous oxide form plasma, and concurrent biochemical reaction generates silica, nitrogen and hydrogen, wherein silica
Solid phase is become by gas phase, uniformly, slowly deposits on substrate, forms silicon dioxide film, nitrogen and hydrogen are directly evacuated
Vacuum chamber is discharged in system.
Wherein, it in silicon dioxide film deposition step, is specifically described for being passed through silane and nitrous oxide, silicon
The flow of alkane is 5-50sccm, and the flow of nitrous oxide is greater than 0sccm and is less than 2000sccm.
Specifically, the flow of silane can be 5sccm, 11sccm, 50sccm, the flow of nitrous oxide be 500sccm,
1250sccm、2000sccm。
In at least one embodiment, in order to enable the obtained silica of deposition it is thin performance it is more preferable, the flow of silane
It can be 11sccm, the flow of nitrous oxide is 1250sccm.
Wherein, in order to enable each tunic can be more uniform be distributed in substrate surface, silicon nitride film deposition step with
It is uninterrupted to rotate substrate 4 and in silicon dioxide film deposition step.And vacuum cavity is connected to pumped vacuum systems, above-mentioned two
In a deposition step, reactor off-gas is discharged and guarantees the vacuum degree of vacuum cavity by pumped vacuum systems.
When substrate 4 is placed on heating platform, heating platform can drive substrate 4 to be rotated.
Specifically, AR film can with the film layer number of plies can be at two layers between tens layers.
In conclusion embodiment according to the present invention optional factor is more.Claim according to the present invention can combine
A variety of implementation methods out, thus claim combinations according to the present invention go out technical method protection scope of the present invention it
It is interior.The present invention is further described through below in conjunction with specific embodiments.
Embodiment one:
As shown in Fig. 2, a kind of AR membrane preparation method provided according to the present invention, comprising:
Step S101 lays flat substrate 4 to vacuum cavity, and toasts to substrate 4；
Step S102 is passed through silane, ammonia and nitrogen into vacuum cavity and is ionized, so that substrate surface deposits
Silicon nitride film, wherein carrier gas of the nitrogen as reaction；
Step S103 is passed through silane and nitrous oxide into vacuum cavity and is ionized, so that 4 surface of substrate deposits
Silicon dioxide film out；
Step S104, alternately silicon nitride film deposition step and silicon dioxide film deposition step.
Specific operation process is as follows:
Step S101 is carried out first to lay flat substrate 4 to vacuum cavity, and substrate 4 is toasted, and baking temperature is set
It is set to 300 DEG C；It then carries out step S102 to be passed through silane, ammonia and nitrogen into vacuum cavity and ionized, so that substrate
Surface deposits silicon nitride film, wherein carrier gas of the nitrogen as reaction, and the flow set of silane is 11sccm, and the flow of ammonia is set
It is set to 10sccm, the flow of nitrogen is 1240sccm；Step S103 is then carried out, silane and an oxidation are passed through into vacuum cavity
Phenodiazine is simultaneously ionized, so that 4 surface of substrate deposits silicon dioxide film, when the gas being passed through is silane and nitrous oxide
When, the flow of silane can be 11sccm, and the flow of nitrous oxide is 1250sccm；Finally carry out step S104, alternately into
Row silicon nitride film deposition step and silicon dioxide film deposition step form the AR film of multilayer.
Embodiment two:
As shown in figure 3, a kind of AR membrane preparation method provided according to the present invention, comprising:
Step S201 lays flat substrate on the heating platform into vacuum cavity, is dried by heating platform to substrate
It is roasting；
Step S202 is passed through silane, ammonia and nitrogen into vacuum cavity and is ionized, so that substrate surface deposits
Silicon nitride film, wherein carrier gas of the nitrogen as reaction；
Step S203 is passed through silane and nitrous oxide into vacuum cavity and is ionized, so that substrate surface deposits
Silicon dioxide film out；
Step S204, alternately silicon nitride film deposition step and silicon dioxide film deposition step, and in two steps
Uninterrupted rotation substrate.
Specific operation process is as follows:
It carries out step S201 first to lay flat substrate 4 on the heating platform into vacuum cavity, by heating platform to base
Piece is toasted, and baking temperature is set as 300 DEG C；It then carries out step S202 and is passed through silane, ammonia and nitrogen into vacuum cavity
Gas is simultaneously ionized, so that substrate surface deposits silicon nitride film, wherein carrier gas of the nitrogen as reaction, the flow set of silane
For 11sccm, the flow set of ammonia is 10sccm, and the flow of nitrogen is 1240sccm；Step S203 is then carried out, to vacuum
It is passed through silane and nitrous oxide in cavity and is ionized, so that 4 surface of substrate deposits silicon dioxide film, when the gas being passed through
When body is silane and nitrous oxide, the flow of silane can be 11sccm, and the flow of nitrous oxide is 1250sccm；Finally
Carrying out step S204, alternately silicon nitride film deposition step and silicon dioxide film deposition step form the AR film of multilayer, and
Uninterruptedly rotate substrate in two steps, enable each tunic it is more uniform be distributed in substrate surface.
The embodiment of third aspect present invention is to provide a kind of AR film, as shown in Figure 4, comprising: substrate 4 is set on substrate 4
The silicon dioxide film 6 and silicon nitride film 7 for thering is multilayer to be alternately stacked, in which:
Along the direction far from substrate, the film thickness of silicon dioxide film 6 is respectively 97.06-99.06nm, 39.92-
41.92nm, 11.51-13.51nm, 103-105nm, 37.36-39.36nm, 85.72-87.72nm；
Along the direction far from substrate, the film thickness of silicon nitride film 7 is respectively 12.86-14.86nm, 82.22-
84.22nm, 38.65-40.65nm, 15.76-17.76nm, 72.42-74.42nm.
For compared with the existing technology, the AR film that the embodiment of third aspect present invention provides has in visible spectral range
Interior lower reflectivity, performance is more preferably.
Specifically, silicon dioxide film 6 directly overlays on substrate 4, along the direction far from substrate 4, first layer titanium dioxide
The film thickness of silicon fiml 61 can be 97.06nm, 98.06nm, 99.06nm；The film thickness of second layer silicon dioxide film 62 can be
39.92nm,40.92nm,41.92nm；The film thickness of third layer silicon dioxide film 63 can for 11.51nm, 12.51nm,
13.51nm；The film thickness of 4th layer of silicon dioxide film 64 can be 103nm, 104nm, 103nm；Layer 5 silicon dioxide film 65
Film thickness can be 37.36nm, 38.36nm, 39.36nm；The film thickness of layer 6 silicon dioxide film 66 can for 85.72nm,
86.72nm、87.72nm。
Specifically, along the direction far from substrate 4, first layer silicon nitride film 71 is covered on first layer silicon dioxide film 61
On, along the direction far from substrate 4, the film thickness of first layer silicon nitride film 71 can be 12.86nm, 13.86nm, 14.86nm；The
The film thickness of two layers of silicon nitride film 72 can be 82.22nm, 83.22nm, 84.22nm；The film thickness of third layer silicon nitride film 73 can be with
For 38.65nm, 39.65nm, 40.65nm；The film thickness of 4th layer of silicon nitride film 74 can for 15.76nm, 16.76nm,
17.76nm；The film thickness of layer 5 silicon nitride film 75 can be 72.42nm, 73.42nm, 74.42nm.
In at least one embodiment, as shown in figure 5, along the direction far from substrate 4, first layer silicon dioxide film 61
Film thickness is 98.06nm；The film thickness of second layer silicon dioxide film 62 is 40.92nm；The film thickness of third layer silicon dioxide film 63 is
12.51nm；The film thickness of 4th layer of silicon dioxide film 64 is 104nm；The film thickness of layer 5 silicon dioxide film 65 is 38.36nm；The
The film thickness of six layers of silicon dioxide film 66 is 86.72nm.
In at least one embodiment, as shown in figure 5, along the direction far from substrate 4, the film of first layer silicon nitride film 71
Thickness is 13.86nm；The film thickness of second layer silicon nitride film 72 is 83.22nm；The film thickness of third layer silicon nitride film 73 is 39.65nm；
The film thickness of 4th layer of silicon nitride film 74 is 16.76nm；The film thickness of layer 5 silicon nitride film 75 is 73.42nm.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of AR membrane preparation device, which is characterized in that including shell (1), heating dish (2) and radio frequency source (3), the shell
(1) there is air inlet and gas outlet, the air inlet enters for reaction gas, and the gas outlet is used for and pumped vacuum systems
Connection, the heating dish are set in the shell (1), and the heating dish (2) is used for carrying substrates (4), so that the substrate (4)
It lies against on the heating dish (2), the radio frequency source (3) connect with the shell (1), to ionize the reaction gas.
2. AR membrane preparation device according to claim 1, which is characterized in that the AR membrane preparation device further includes being set to institute
The rotating mechanism (5) on shell (1) is stated, the rotating mechanism (5) connect with the heating dish (2), for driving the heating
Disk (2) rotation.
3. a kind of AR membrane preparation method characterized by comprising
Baking procedure: substrate (4) is laid flat to vacuum cavity, and is toasted to the substrate (4)；
Silicon nitride film deposition step: being passed through silane and ammonia into vacuum cavity and ionized, so that the substrate (4) surface
Deposit silicon nitride film；
Silicon dioxide film deposition step: being passed through silane and nitrous oxide into vacuum cavity and ionized, so that the base
Piece (4) surface deposits silicon dioxide film；
Alternating deposit step: the alternately described silicon nitride film deposition step and the silicon dioxide film deposition step.
4. AR membrane preparation method according to claim 3, which is characterized in that in the baking procedure, comprising:
200-500 DEG C is set as to the baking temperature of the substrate (4).
5. AR membrane preparation method according to claim 3, which is characterized in that in the baking procedure, comprising:
The substrate (4) is lain on heating platform, the substrate (4) is toasted by the heating platform.
6. AR membrane preparation method according to claim 3, which is characterized in that in the silicon nitride film deposition step, institute
The flow for stating silane is 5-50sccm, and the flow of the ammonia is 5-50sccm.
7. AR membrane preparation method according to claim 3, which is characterized in that in the silicon nitride film deposition step, also
Include:
It is passed through nitrogen into the vacuum cavity, using the carrier gas as reaction.
8. AR membrane preparation method according to claim 3, which is characterized in that in the silicon dioxide film deposition step,
When being passed through silane and nitrous oxide and being ionized, the flow of the silane is 5-50sccm, the nitrous oxide
Flow is greater than 0sccm and is less than 2000sccm.
9. AR membrane preparation method according to claim 3, which is characterized in that in the silicon nitride film deposition step and institute
It states in silicon dioxide film deposition step, further includes:
Uninterruptedly rotate the substrate (4).
10. a kind of AR film, which is characterized in that including substrate (4), the side of the substrate (4) is equipped with multi-layer silica dioxide film (6)
And nitride multilayer silicon fiml (7), the silicon dioxide film (6) and the silicon nitride film (7) are alternately stacked, in which:
Along far from the substrate direction, the film thickness of the silicon dioxide film (6) be respectively 97.06-99.06nm,
39.92-41.92nm, 11.51-13.51nm, 103-105nm, 37.36-39.36nm, 85.72-87.72nm；
Along the direction far from the substrate, the film thickness of the silicon nitride film (7) is respectively 12.86-14.86nm, 82.22-
84.22nm, 38.65-40.65nm, 15.76-17.76nm, 72.42-74.42nm.
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