M368892 五、新型說明： 【新型所屬之技術領域】 尤 滤 本創作係有關於—種電㈣篩裝置及其電漿設備， ί 一種微觀馳«巾離子（含質子)與電子特性的電漿 篩裝置及其電漿設備。 【先前技術】 電漿物理、化學氣相领刻或薄膜沉積技術應用於工業 二：:：：：歷史。電漿—詞源於西元1926年Langmui: f時部份區域的現象或狀態。此後，電漿被用 /田述邛伤(或全部)離子化氣體之狀態，電漿中包括電 二離子（含#子）、原子、分子及中性自由基等；Ϊ iU:電中性的狀態’且被稱為是物質的第四狀 心、鍍膜或表面改質等工藝所採用的電漿為冷 電聚（C__a)，也就是說電裝中之電子、離子 子)、原子、分子及自由基物質的溫度皆不相同 漿的特性中只有準電中性的性質不變，其他的性質皆;隨 有關參數如氣體溫度、塵力、射頻頻率等等的改變而 變化。 工紫漿的特性’可使電裝具有各種性質狀態，以利 被廣乏且:用Λ於20世紀’電裝物理、化學氣相技術已 的應用於微電子、平板顯影、太陽能電池 一電感應器之製造。例如··電漿物理、化 關’即所_乾_⑽❿㈣）技術㈣用與不斷 3 M368892 k幵使彳于知體電路的製程發展得持續地以倍數的方式成 長，也造就了半導體工業的快速發展。又例如電漿物理、 化學氣相薄臈沉積技術的應用與不斷提昇，使得基板鍍膜 的面積尺寸得以一再的放大，同樣造成平板顯影工業的迅 速成長。而現今，電漿化學氣相薄膜沉積技術正迅速的應 用於發展中的薄膜太陽能工業。 然而，電漿物理、化學氣相製程技術在半導體、平板 顯影及薄臈太陽能等工業又面臨一些新的挑戰。例如：由 於低介電膜材料（Low-k Dielectric )均含有孔隙，且其硬 度與強度也遠低傳統的介電材料。在乾式蝕刻（Dry Etching)的過程中，如何能不損壞低介電膜材而蝕刻出所 要的電路圖案，即是對電漿蝕刻技術的挑戰。又如在平板 顯影工業方面’如何能降低基板所需的製程溫度而可以進 行鑛膜’進而放見基材選擇的條件，也是平板顯影工業想 要達成的突破。再者，如何在以㈣為基材進行大平面尺 寸的鍍膜，同樣是對電聚物理、化學氣相薄膜沉積技術的 *項挑戰。又如在薄膜太陽能工業方面，如何提昇太陽能 薄膜之轉換效率、增加良率以及降低製造成本 ，也是對電 漿化學氣相薄膜沉積技術的一種挑戰。 緣疋，本創作人有感上述缺失之可改善，提出一種設 計合理且有效改善上述缺失之本創作。 【新型内容】 本創作之主要目的，在於提供一種電漿濾篩装置及其 M368892 電裝設備’該電漿濾篩裝置可結合於電漿設備中，並於物 理、化學氣相敍刻或薄膜沉積過程中，有效控制與篩選離 子（含質子）與電子之數量與能量，而進一步掌控反應室中 - 的電漿特性、電漿物理、化學氣相成份，以及蝕刻或薄膜 ' 沉積參數’以達成製程最佳化目的。 為了達成上述之目的，本創作係提供一種電漿濾篩裝 置，其包括：一濾篩結構體，其具有複數個孔洞，其中該 濾篩結構體包含：一導體結構與一絕緣結構；以及一控制 •電路系統，其係耦接於該導體結構。該電漿濾篩裝置更可 含有一旁側磁力模組。 本創作亦提供一種電漿設備，其包括一電漿反應室， 5亥電漿反應室中容置有一基板，該電漿設備係於該電漿反 應室中之電漿區域形成電漿，該電漿反應室中裝設有一電 漿濾篩裝置，該電漿濾篩裝置係相對於該基板而位於該電 漿區域下方，該電漿濾筛裝置包括一濾_結構體以及一耦 接於該濾篩結構體之控制電路系統，該濾篩結構體係由一 導體結構與一絕緣結構組成，該濾篩結構體具有複數個孔 ' 洞。 . 本創作具有以下有益的效果：本創作提出之電漿濾篩 ,裝置，其包含多個的孔洞，以便讓電漿物質可以通過，濾 篩結構體的導體結構通電時，將會在其内部產生一個或數 個電場’電㈣質中的電子、質子、正離子或負離子通過 此電聚濾、篩裂置時’將會受到上述内部電場或電磁場的強 度及極性（Polarity)的影響，而進行阻止、篩選上述離子 5 M368892 子）與電子通過此 (含質子）與電子，進而調控上述離子（含質 電漿濾篩裝置的數量與能量。 為使能更進一步瞭解本創作之特徵及技術内容，請參 閱以下有關本創作之詳細說明與附圖，然而所附圖式僅提 供參考與說明用，並非用來對本創作加以限制者。 【實施方式】 睛參閱第一圖，本創作係提供一種電漿濾篩裝置工， 该電漿濾篩裝置1主要係裝設於一電漿反應室2之中（係 相對於基板2 1而位於電漿區域2〇下方），以進行通過 該電漿濾篩裝置1之物質（包括帶電粒子、氣相物質等電 漿物質）的筛選作業，該電漿濾篩裝置i係包括一濾篩結 構體1 0以及一耦接於該濾篩結構體i 〇之控制電路系 統1 1，而該電漿濾蒒裝置1主要係利用該控制電路系統 1 1控制該濾篩結構體1 〇產生電場，進以篩選通過該電 漿濾篩裝置1之濾篩結構體1 〇的物質。 請參考第二圖，該濾篩結構體1 〇實質上係一具有複 數個孔洞1 0 1之結構體，請配合第二A圖與第二B圖， 該遽篩結構體1 0係包括一絕緣結構1 〇 2以及一導體 結構1 0 3，而該控制電路系統1 1係輕接於該導體結構 1 0 3，以產生篩選作用之電場。 濾篩結構體1 0之基本構件為導體板、絕緣板、或導 體與絕緣體之疊合板。其中導體與絕緣體之疊合板，請參 考第二A與二B圖。第二A圖中該導體結構丄包含 M368892 有一具有複數個導體基板孔位1 Ο 3 1之導體層體1 Ο 3 a，該絕緣結構1 〇 2包含有一具有複數個絕緣結構孔 位1 0 2 1之絕緣層體1 〇 2 a ’該導體層體1 〇 3 a與該 絕緣層體1 〇 2 a係為上下疊合（在本實施例中，絕緣層 體1 0 2a係疊合於導體層體i 〇 3a上），且該些導體基 板孔位1 〇 3 1係與該些絕緣結構孔位1 〇 2 1形成該 些孔洞101。 «月參考第二B圖’其可為本濾篩結構體之基本構件 _外’也為本創作之電聚濾篩裝置工的第一實施例的變化態 樣，其中該導體結構1 0 3包含有二個具有複數個導體基 板^位1 ◦ 3 1之導體層體1 0 3 a，該絕緣結構1 0 2 包含有一具有複數個絕緣結構孔位i 〇 2 i之絕緣層體 1 〇 2a’该絕緣層體丄〇 2a係夾持於該兩導體層體丄〇 3 a之間，且该些導體基板孔丄〇 3 1位係與該些絕緣結 構孔位1 〇 2 1則對應排列以形成該些孔洞1 〇 1。 • 因此，由第一實施例，電漿濾篩裝置1之導體結構1 〇 3可包含有一個或複數個（如二至六片不等）且有複數 ^㈣基板隸1Q31之導體層體1Q3a，該絕緣結 • 〇2則同樣包含有—個或複數個具有複數個絕緣結 =1 0 2 1之絕緣層體1 〇 2 a，換言之，本創作並 不上述導體層體103a與絕緣層體1〇2a的數量 旦比式。當導體層體10 3a與絕緣層體1 〇2a的數 二:、多數個時’該些絕緣層體丄〇 2a與該些導體層體 a係交錯地上下疊合，藉由絕緣層體工◦ ^隔絕相 7 M368892 鄰之導體層體1 〇 3a，且該些導體基板孔丄〇 3丄位係 與s亥些絕緣結構孔位1 〇 2 1則對應排列以形成該些孔 洞1 0 1，而上述對應方式可為錯位形式或是正對位方式 排列。 請參考第三Α圖，其為本創作之電漿濾篩裝置丄的第 二實施例’其與第一實施例不同之處在於該絕緣結構1 〇 2係由絕緣體1 0 2 b所組成，而該絕緣體i 〇 2 b並不 具有上述實施例之絕緣結構孔位i 〇 2 i，換言之，在本 實施例中’該導體結構1 0 3包含有兩個具有複數個導體 基板孔位1 〇 3 1之導體層體1 〇 3 a，該絕緣結構1 0 2則包含有一個絕緣體1 〇 2b，該絕緣體1 〇 2b係夾合 於該兩導體層體1 〇 3a之間’且該絕緣體1 〇 2b係設 置於該兩導體層體1 〇 3a的旁側，以避免遮擋該些導體 基板孔位1031，而該兩導體層體上i〇3a之該些導 體基板孔位1 〇 3 1係相互對應以形成該些孔洞1 〇 1 °另一方面，在本實施例中，該兩導體層體1 〇 3a上 之該些導體基板孔位1 0 3 1係部分地相互對應以形成 該些孔洞1 〇 1，亦即該些導體基板孔位1 0 3 1係為錯 位形式的對應排列，以產生不同的濾篩效果。 請參考第三B圖’其為本創作之電漿濾篩裝置1的第 三實施例，該導體結構1 0 3包含有三個具有複數個導體 基板孔位1 〇 3 1之導體層體1 〇 3 a，該絕緣結構1 〇 2則包含有二個絕緣體1 〇 2b，每一該絕緣體1 0 2b係 夾合於兩相鄰的導體層體1 〇 3 a之間，且該絕緣體1 〇 M368892 2 b係设置於該導體層體1 〇 3 &的旁側，以避免遮擋該 些導體基板孔位1031，而該兩導體層體i〇3a上之 該些導體基板孔位1 〇 3 1係相互對應以形成該些孔洞 ' 1 0 1 ;在本實施例中，該些導體基板孔位1 〇 3 1係完 ' 全地相互對應以形成該些孔洞101，換言之，該些導體 基板孔位1 0 3 1係以正對位的方式排列，以形成該些孔 洞 1 0 1。 ~ 請參考第三C圖，其為本創作之電漿濾篩裝置i的第 春四實施例，其與前述實施例不同之處在於，該電漿濾篩裝 置1更包括有一设置於該濾篩結構體1 〇旁侧之磁力模 組1 0 0，而該磁力模組i 〇 0可為磁環或電磁鐵，使該 濾篩結構體10所產生的内部電場會伴隨有電磁效應。 因此，综合第一至第四實施例，該電漿濾篩裝置丄之 導體結構1 0 3包含有一個或複數個（含二至六片導體不 等）具有複數個導體基板孔位i 〇 3 1之導體層體i 〇 3 a;而該絕緣結構1 0 2則包含有一個或複數個具有複數 ® 個絕緣結構孔位1 〇 2 1之絕緣層體χ 〇 2a，或（及）包含 -有一個或複數個絕緣體1 0 2b，該些導體層體丄〇 33與 .該些絕緣體1〇2a係交錯地上下疊合，而每一該絕^體 1 〇 2b係設置於兩相鄰之該導體層體i 〇 3a的旁側。 .換言之，本創作並不限定上述導體層體1 0 3a與絕緣層 體1 0 2a、1 〇2b的數1及組合方式。且該些導體美板 孔1 0 3 1位係與該些絕緣結構孔位1 〇 2 i'則對^排 列以形成該些孔洞1 〇 1，該些導體層體i 〇 3a 〜上 9 M368892 些導體基板孔位1 〇 3 1係相互對應以形成該些孔洞工 0 1 ;另外，上述對應方式可為錯位或正對位的方式排列。 另一方面，每一導體層體1 0 3a之電壓、電流量、 頻率皆可獨立控制’而其電流也可能是脈衝式(pulse)或連 續式。而該濾篩結構體1 〇與控制電路系統i工組裝後， 可與現有的電漿設備結合，且該錢濾_置k控制電 路系統11也將依電漿設備與製程的需求而進行設定。 請復參考第一圖，並配合第二圖至第三c圖之具體實 施例，本創作更提出一種具有電漿濾篩裝置丄之電漿設 備，該電漿濾篩裝置1可應用於物理、化學氣相的製程 中，且可輕易的組裝於目前業界所使用的電漿設備中。如 第一圖所示，該電漿濾筛裝置i係裝設於電漿反應室2 中’電漿反應室2之電漿區域2 〇係形成於該電漿濾篩裝 置1的上方，而基板21則在該電漿濾篩裝置丄之濾篩結 構體1 Q的下方’因此’電漿產生的物質將會通過渡筛結 構體1 Q才可到達基板2 1 °而將依據㈣設備與製程的 需求，注入電漿反應室2的所有氣體可能全部注入電漿反 應室2之電㈣域2 〇 ;或者是僅有一部份的氣體注入電 漿反應室2之電漿區域2 〇，而其餘的氣體則注入於滤筛 結構體1 〇與基板2 1之間的區域。 當電漿物質通過該電漿濾篩裝置丄之濾筛結構體工 0時，濾篩結構體i ◦之導體結構i 〇 3會由該控制電路 系統1 1的驅動而產生内部的電場或電磁場，以針對電漿 中帶電的物質㈣選與調控。例如：在半導體乾式姓刻的 M368892 製程中，中性活化之自由基物質（含原子與分子）將通過 濾篩結構體1 0之孔洞i，而不受該濾篩結構體工〇 =内部電場或電磁場之任何影響；反之，帶電物質通過遽 4結構體1 〇時，其數量、能量或數量與能量將受該爐筛 結構體1 0之内部電場或電磁場之影響，而達到其筛選與 調控的作用與目的。因此本創作能產生最佳化的中性活化 .自由基物質、離子（含質子）與電子之氣相組合。再者，該 據筛^構體1〇所產生的外部電場幾乎是零，故此裝置能 與目前業界使用的電裝反應室設備互相組褒結合，而不會 造成其他製程上的影響。 換言之，本創作更提出一種利用電裝遽筛裝置工的電 裝滤篩方法，其係將電聚滤筛裝置工裝設於一電裝設備之 電漿反應室2中，當電聚生成於該電漿反應室2中之電浆 ，域^時’利用該電漿遽篩裝置i所產生的電場或電磁 琢師k通過„亥電漿濾篩裝置1的物質，例如當電聚物質 通過滤篩結構體1〇時，原子、分子及中性自由基物質將 電場或電磁場的影響’而無任何攔阻通過。但電 ’1 η *㈣子、許、正離子或負離子通㈣篩結構體 將會受糊結構體1〇之内部電場或電磁場的 ^:性(Polarity)的影響，而可以被阻正、筛選，或 結構體1 〇的數量與能量。如此，藉 對電漿帶電物質的直接調控，而不須改 、、μ之堊力、軋體溫度、射頻頻率、氣體成份等等之製 程參數’進而達成提昇與增加電浆(或氣相)=:i 11 M368892 自由度；且被電場或電磁場阻欄下的帶電物質，將玎回流 入電漿區域2 0，而可提昇電漿裂解注入電漿區域2 〇的 氣體反應效率，且可以在較低的真空（較高的壓力）中產生 高密度電漿，亦即在近於常壓的壓力環境中產生（冷）電 桌。又或者，將電子能量調控於30到90電子伏特之間， · 此能量之電子撞擊將可對基材、薄膜在蝕刻後或成長後之 應力消除或損害修復，以進行非加熱式的退火（anneal)- 製程。 . 另一方面’本創作之電漿濾篩裝置1對帶電電漿物質 鲁 的直接調控’將可為半導體低介電膜材蝕刻、平板顯影低 /皿基材鍍膜以及薄膜太陽能之轉換效率、良率與製造成本 等挑戰，提出了解決方法。舉例來說，在氣相蝕刻的製程 中/舌性化學物質對基板之反應屬同向性(Isotropic)蚀刻。 而異向性(Anisotropic)蝕刻則必須經由活性化學物質與離 子撞擊共同作用於蝕刻基板而達成，且異向性蝕刻係為乾 式蝕刻製作電路圖案的必備方法。然而過量或過度的離子 ，擊也會造成蝕刻電路、基板或沉積薄膜的損害。又如， 鲁 當離子的平均能量相對於每一沉積原子為不大於10電子_ 伏特（ev)以上時，沉積膜的性質、品質及生長速率將可 改，，且同時不會因離子之過度、過量撞擊基材（含沉積， ，處）而造成沉積膜的損害。因此，藉由調控後離子適度 . 才里擊基材（即沉積物質），將撞擊動能之轉換增加沉積物· 質在基材上之移動機動力，而達成以較低基材溫度生長沉 積膜的功效，使該沉積薄膜的製輕可應用於低溫基材，如 12 M368892 塑膠之鍍膜。 本創作可應用於各種的電漿氣相製程，例如，在氣相 薄膜沉積的製程中，利用氬氣（Argon)、氫氣（H2)及石夕 - 曱烧（SiH4)進行化學氣相沉積生長非晶性氫化梦^ ' (Hydrogenated Amorphous Silicon Film; a-Si-H λ ^ , 、 礼⑴為例，將 鼠氣及氮氣注入電聚反應室2之電浆區域2 Q，而將^ 烷注入沉積區域的製程做說明。中性活化的原早_ . ’、丁 V 3氣氣 及氫氣）可通過濾篩結構體1 0，而不受其内部電 • 磁場之影響。而質子、氬離子及電子通過濾_結構體I0 時，其通過的數量、能量或數量與能量將受到該遽、 體1 0之内部電場或電磁場之影響，以達到篩選與調控的 作用與目的。而篩選與調控後的電漿物質，將與石夕甲燒進 行增生反應，反應混合後的氣體將與基板2 1發生作肖， 以生長非晶性氫化矽膜。藉由本創作之電漿濾篩裝置1對 氛自由基、氬活化基、質子、氬離子及電子之篩選與調控， 進而獲致與矽甲烷反應產生最佳化沉積之混合氣體，以提 鲁 昇沉積薄膜之生長速度、良率以及降低製造成本；且可進 .一步降低製程所需的基板溫度。舉例來說，該電漿濾篩裝 .置1能調控電子之能量在8至13電子伏特之間’此能量 的電子及氫原子與矽甲烷的反應，將可產生以（SiH3; Silyl) 為主的矽沉積物質，進而改善非晶性氫化矽膜的成長速 度、品質、良率及製造成本，且有助於薄嫉太陽能或平板 顯影之製程。 再者，以電漿蝕刻製程說明本創作之特徵。請參考第 13 M368892 四圖’其為本創作之電漿濾篩裝置1應用於電漿蝕刻製程 設備的不意®1 (圖中並未繪出控制電路系統1 1 )。該電 聚反應室2之電漿區域2 〇在遽篩結構體丄〇之上，而晶 圓（即基板2 1)則承載於一晶圓基座2 2上而位於該據 筛，體1 〇的下方，同_刻之氣體則全部注人電J 應室2之電毅區域2 〇。姓刻氣體將被電解而形成部份或 王邛離子化氣體之狀態，因此電漿中包括有電子、離子、 原子、分子及中性自由基等物質，上述電漿中的物質將通 過滤筛結構體1〇才可到達晶圓進行反應。另外，如第四 圖所不，該濾篩結構體1〇之導體結構丄0 3包含有外圍 導體1 0 3b及導體層體i 〇 3a，該導體層體} 〇 3&的 外緣係被為外圍導體1 〇 3 b所圍繞，此外圍導體丄〇 3 b 將屏蔽電莱反應室2中（如電浆區域2 Q)之電磁波對遽筛 結構體1 〇之内部電場的影響。在一般的情況下，外圍導 體1 0 3 b係為接地。而濾篩結構體1 〇的内部設有二片 導體層體1 0 3a，其與外圍導體1 〇 3b之間以絕緣層體 1 0 2 a加以區隔。該二片導體層體丄〇 3 a之間的間距為 0.5至2.0公分。該濾篩結構體1 〇的平面形狀實質上同 於晶圓，且該濾篩結構體1 〇的尺寸將略大於晶圓尺寸。 例如，應用於200mm的製程設備時，本創作之該濾篩結 構體1 〇的平面尺寸將略大於200min。另外，該濾篩結構 體1 0的平面上平均分佈許多孔洞1 〇 1，每一孔洞1 〇 1的直徑為0.005至0.02公分，孔洞1 〇 1的中心間距為 〇.〇1至0.06公分。當電漿物質流經孔洞丄〇丄以穿過濾 14 M368892 師結構體1〇時，其内部之二片導體層體工〇 3a所產生 2電場，將影響帶電物質的通過，以馳到達晶圓之離子 $量或/及能量。因此能產生最佳化的中性活化自由基物 二、離子與電子之氣相組合，而在不财㈣（如低介電 膘材）的情況下，達絲刻出所要的電路圖案的效果。 本創作係提出-種電輯篩裝置丄，其係以内部之電 ^對通過職置之錢物f，進行電漿物f的篩選與調 -’而該電聚遽筛裝置i之濾篩結構體工◦上具有複數個 ^洞1 Ο 1，該些孔洞；L 〇 i的大小、形狀、數量、分佈 :密度’將依應用該電漿濾㈣U的設備與製程需求而 疋。另外，上狀絕緣結則Q 2與導赌構i 〇 3的組 裝結構亦可依照實際應用上的需求進行調整，並不以上 實施例為限。 綜上所述，本創作具有下列諸項優點： 1本創作之電漿濾筛裝置可以組裝於不同尺寸、特性的M368892 V. New description: [New technical field] The special filter system has a kind of electric (four) sieve device and its plasma equipment, ί a micro-machined plasma ion (with proton) and electronic characteristics of the plasma screen Device and its plasma equipment. [Prior Art] Plasma physics, chemical vapor engraving or thin film deposition techniques are applied to industrial two:::::history. Plasma - the word originated from the phenomenon or state of part of the area when Langmui: f in 1926. Thereafter, the plasma is used to injure (or all) the state of the ionized gas, and the plasma includes electric diion (including #子), atoms, molecules, and neutral radicals; Ϊ iU: electrical neutrality The state of the process is called the fourth core of matter, coating or surface modification. The plasma used in the process is cold electricity (C__a), that is, electrons in the electrical equipment, ions, atoms, The temperature of the molecules and the radicals are different. Only the properties of the quasi-electrical neutral are unchanged, and other properties are changed; the parameters such as gas temperature, dust force, radio frequency and the like change. The characteristics of the work of the purple pulp can make the electric equipment have various properties, so that it is widely used: in the 20th century, the electrical and chemical vapor phase technology has been applied to microelectronics, flat panel development, solar cells and electricity. The manufacture of sensors. For example, · Plasma physics, Huaguan's _ dry _ (10) ❿ (four)) Technology (4) with the continuous 3 M368892 k 幵 彳 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知Rapid development. For example, the application and continuous improvement of plasma physics and chemical vapor deposition technology have enabled the substrate size of the substrate to be magnified repeatedly, which has also led to the rapid growth of the flat panel development industry. Today, plasma chemical vapor deposition is rapidly being applied to the developing thin film solar industry. However, plasma physics and chemical vapor process technologies face new challenges in industries such as semiconductors, flat panel development, and thin solar energy. For example, low dielectric film materials (Low-k Dielectric) contain pores, and their hardness and strength are much lower than conventional dielectric materials. In the process of Dry Etching, how to etch the desired circuit pattern without damaging the low dielectric film is a challenge to the plasma etching technique. For example, in the flat panel development industry, how to reduce the process temperature required for the substrate and to carry out the mineral film, and then to see the conditions for substrate selection, is also a breakthrough that the flat panel development industry is trying to achieve. Furthermore, how to apply a large-plane size coating on (4) as a substrate is also a challenge for electro-polymerization and chemical vapor deposition. In the thin film solar industry, how to improve the conversion efficiency, increase the yield and reduce the manufacturing cost of solar thin films is also a challenge to plasma chemical vapor deposition. Because of this, the creator feels that the above-mentioned deficiency can be improved, and proposes a creation that is reasonable in design and effective in improving the above-mentioned deficiency. [New content] The main purpose of this creation is to provide a plasma filter device and its M368892 electrical equipment. The plasma filter device can be combined in a plasma device and physically or chemically vaporized or filmed. During the deposition process, the amount and energy of ions (including protons) and electrons are effectively controlled and controlled, and the plasma characteristics, plasma physics, chemical vapor phase composition, and etching or film 'deposition parameters' of the reaction chamber are further controlled. Achieve process optimization. In order to achieve the above object, the present invention provides a plasma screen device comprising: a screen structure having a plurality of holes, wherein the screen structure comprises: a conductor structure and an insulation structure; A control circuit is coupled to the conductor structure. The plasma filter device can further comprise a side magnetic module. The present invention also provides a plasma apparatus comprising a plasma reaction chamber, wherein a substrate is disposed in a plasma chamber, and the plasma device forms a plasma in a plasma region of the plasma reaction chamber. A plasma filter screen device is disposed in the plasma reaction chamber, and the plasma filter screen device is located below the plasma region relative to the substrate, the plasma filter screen device includes a filter structure and a coupling The control circuit system of the screen structure comprises a conductor structure and an insulation structure, the screen structure body having a plurality of holes. The present invention has the following beneficial effects: the plasma filter screen of the present invention, the device, which comprises a plurality of holes for allowing the plasma material to pass, and the conductor structure of the filter structure body will be inside when it is energized Producing one or several electric fields, the electrons, protons, positive ions or negative ions in the electric (four) mass will be affected by the intensity and polarity of the internal electric field or electromagnetic field through the electropolymerization and sieving. To prevent and screen the above ions 5 M368892) and electrons through this (including protons) and electrons, and then regulate the above ions (the number and energy of the plasma filter device. To enable a better understanding of the characteristics and technology of this creation Please refer to the following for a detailed description of the present invention and the accompanying drawings. However, the drawings are only for reference and description, and are not intended to limit the creation. [Embodiment] Referring to the first figure, the present invention provides A plasma filter screen device 1 is mainly installed in a plasma reaction chamber 2 (located in the plasma region 2 with respect to the substrate 2 1 (bottom) for performing a screening operation of a substance (including a charged particle, a gas phase substance, or the like) passing through the plasma filter device 1, the plasma filter device i including a sieve structure 10 and a control circuit system 1 1 coupled to the screen structure i 而 and the plasma filter device 1 mainly controls the screen structure 1 to generate an electric field by the control circuit system 1 The material of the filter structure 1 of the plasma filter device 1 is referred to the second figure. The sieve structure 1 is substantially a structure having a plurality of holes 1 0 1 , please cooperate with the second A And the second B-picture, the sieving structure 10 includes an insulating structure 1 〇 2 and a conductor structure 203, and the control circuit system 1 1 is lightly connected to the conductor structure 1300 to generate The electric field of the screen is 10. The basic component of the screen structure 10 is a conductor plate, an insulating plate, or a laminated plate of a conductor and an insulator. For the laminated plate of the conductor and the insulator, please refer to the second A and B diagrams. In the figure, the conductor structure 丄 includes M368892 and has a plurality of conductor bases. The conductor layer 1 Ο 3 a of the hole 1 Ο 3 1 , the insulating structure 1 〇 2 comprises an insulating layer body 1 2 2 a 'the conductor layer body 1 具有 3 having a plurality of insulating structure holes 1 0 2 1 a and the insulating layer body 1 〇 2 a are superposed one another (in the present embodiment, the insulating layer body 10 2a is superposed on the conductor layer body i 〇 3a), and the conductor substrate holes are 1 〇 The 3 1 series forms the holes 101 with the holes 1 〇 2 1 of the insulating structure. «May reference to the second B picture, which can be the basic component of the filter structure _ outside' is also the electrofusion filter of the present invention A variation of the first embodiment of the screen assembly, wherein the conductor structure 103 includes two conductor layers 1 0 3 a having a plurality of conductor substrates 1 ◦ 3 1 , the insulating structure 1 0 2 An insulating layer body 1 〇 2a ′ having a plurality of insulating structure hole positions i 〇 2 i is sandwiched between the two conductor layer bodies 丄〇 3 a , and the conductor substrate holes are The 丄〇3 1 position is aligned with the insulating structure hole positions 1 〇 2 1 to form the holes 1 〇1. • Therefore, by the first embodiment, the conductor structure 1 〇3 of the plasma screen device 1 may include one or a plurality of (for example, two to six pieces) and a plurality of (four) substrates of the conductor layer 1Q3a of 1Q31. The insulating junction 〇2 also includes one or a plurality of insulating layer bodies 1 〇 2 a having a plurality of insulating junctions = 1 0 2 1 , in other words, the present invention does not have the above conductor layer body 103a and the insulating layer body. The number of 1〇2a is equal to the formula. When the number of the conductor layer body 10 3a and the insulating layer body 1 〇 2a is two, a plurality of the insulating layer bodies a 2a and the conductor layer bodies a are alternately stacked one on another, by the insulation layer ◦ ^Isolation phase 7 M368892 adjacent conductor layer body 1 〇3a, and the conductor substrate holes 丄3 丄 与 与 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些The above corresponding manner may be in the form of a misalignment or a positive alignment. Please refer to the third drawing, which is a second embodiment of the plasma screen device 创作 of the present invention. The difference from the first embodiment is that the insulating structure 1 〇 2 is composed of an insulator 10 2 b. The insulator i 〇 2 b does not have the insulating structure hole position i 〇 2 i of the above embodiment. In other words, in the present embodiment, the conductor structure IO 3 includes two holes having a plurality of conductor substrates. 3 1 conductor layer body 1 〇 3 a, the insulation structure 1 0 2 includes an insulator 1 〇 2b, the insulator 1 〇 2b is sandwiched between the two conductor layer bodies 1 〇 3a ' and the insulator 1 The 〇2b is disposed on the side of the two-conductor layer body 1 〇3a to avoid obscuring the conductor substrate hole positions 1031, and the conductor substrate holes 1 〇3 1 of the two-conductor layer body Corresponding to each other to form the holes 1 〇 1 ° On the other hand, in the embodiment, the conductor substrate holes 1 0 3 1 on the two conductor layer bodies 1 〇 3a partially correspond to each other to form the holes Hole 1 〇1, that is, the hole positions of the conductor substrates 1 0 3 1 are in a corresponding arrangement of misalignment forms, Different sieve effect. Please refer to the third embodiment of the third embodiment of the plasma filter device 1 of the present invention. The conductor structure 103 includes three conductor layers 1 having a plurality of conductor substrate holes 1 〇 3 1 3 a, the insulating structure 1 〇 2 comprises two insulators 1 〇 2b, each of the insulators 10 2b is sandwiched between two adjacent conductor layer bodies 1 〇 3 a , and the insulator 1 〇 M368892 2 b is disposed on the side of the conductor layer body 1 〇 3 & to avoid obscuring the conductor substrate hole positions 1031, and the conductor substrate holes 1 〇 3 1 on the two conductor layer bodies i 〇 3a Corresponding to each other to form the holes '1 0 1 ; in the embodiment, the hole positions of the conductor substrates 1 〇 3 1 are completely corresponding to each other to form the holes 101, in other words, the conductor substrate holes Bits 1 0 3 1 are arranged in a positive alignment to form the holes 1 0 1 . ~ Please refer to the third C figure, which is the fourth embodiment of the plasma filter device i of the present invention, which is different from the previous embodiment in that the plasma filter device 1 further includes a filter disposed on the filter. The magnetic module i 〇0 on the side of the screen structure 1 is a magnetic ring or an electromagnet, so that the internal electric field generated by the screen structure 10 is accompanied by an electromagnetic effect. Therefore, in combination with the first to fourth embodiments, the conductor structure 10 of the plasma screen device has one or more (including two to six conductors) having a plurality of conductor substrate holes i 〇 3 a conductor layer i 〇 3 a; and the insulating structure 102 includes one or more insulating layers χ 2a having a plurality of insulating structure holes 1 〇 2 1 , or (and) containing - There is one or a plurality of insulators 10 2b, and the conductor layers 丄〇 33 and the insulators 1 〇 2a are alternately stacked one on another, and each of the insulators 1 〇 2b is disposed adjacent to each other. The side of the conductor layer i 〇 3a. In other words, the present invention does not limit the number 1 and the combination of the above-mentioned conductor layer body 10 3a and the insulating layer bodies 1 0 2a, 1 〇 2b. And the conductor plate holes 1 0 3 1 position and the insulating structure hole positions 1 〇 2 i ′ are arranged to form the holes 1 〇 1 , the conductor layer bodies i 〇 3a 〜 9 M368892 The hole positions 1 〇 3 1 of the conductor substrates correspond to each other to form the holes 0 1 ; in addition, the corresponding manners may be arranged in a misaligned or positively aligned manner. On the other hand, the voltage, current amount, and frequency of each conductor layer 1 0 3a can be independently controlled 'and the current can be pulsed or continuous. After the screen structure 1 is assembled with the control circuit system, it can be combined with the existing plasma equipment, and the money filter circuit system 11 will also be set according to the requirements of the plasma equipment and the process. . Referring to the first figure, and in conjunction with the specific embodiments of the second to third c-pictures, the present invention further proposes a plasma device having a plasma screen device, which can be applied to physics. In the process of chemical vapor phase, it can be easily assembled into the plasma equipment used in the industry. As shown in the first figure, the plasma filter device i is installed in the plasma reaction chamber 2, and the plasma region 2 of the plasma reaction chamber 2 is formed above the plasma filter device 1, and The substrate 21 is then below the screen structure 1 Q of the plasma screen device, so that the material generated by the plasma will pass through the screen structure 1 Q to reach the substrate 2 1 ° and will be based on (4) equipment and For the processing requirements, all of the gas injected into the plasma reaction chamber 2 may be completely injected into the electric (four) domain 2 of the plasma reaction chamber 2; or only a portion of the gas is injected into the plasma region 2 of the plasma reaction chamber 2, and The remaining gas is injected into the region between the screen structure 1 〇 and the substrate 2 1 . When the plasma material passes through the filter screen structure of the plasma filter device, the conductor structure i 〇3 of the screen structure i 会 is driven by the control circuit system 1 to generate an internal electric field or an electromagnetic field. In order to select and control the substances (4) charged in the plasma. For example, in the semiconductor dry-type M368892 process, the neutrally activated radical species (containing atoms and molecules) will pass through the pores i of the sieve structure 10, without being affected by the sieve structure = internal electric field Or any influence of the electromagnetic field; conversely, when the charged substance passes through the 遽4 structure, its quantity, energy or quantity and energy will be affected by the internal electric field or electromagnetic field of the sifter structure 10, and the screening and The role and purpose of regulation. Therefore, this creation produces optimized neutral activation. The combination of free radical species, ions (including protons) and electrons. Moreover, the external electric field generated by the screen structure is almost zero, so that the device can be combined with the electrical equipment chamber equipment currently used in the industry without causing other processes. In other words, the present invention further proposes an electric filter screen method using an electric sifting device, which is installed in a plasma reaction chamber 2 of an electrical equipment, when electropolymerization is generated The plasma in the plasma reaction chamber 2, when the electric field generated by the plasma sieving device i or the electromagnetic sifter k passes through the material of the AI filter screen device 1, for example, when the electropolymer material passes through the filter When the sieve structure is 1 ,, the atoms, molecules and neutral radicals will pass the influence of the electric field or electromagnetic field without any hindrance. However, the electric '1 η * (4) sub, Xu, cation or negative ion pass (four) sieve structure will It can be affected by the internal electric field or electromagnetic field of the paste structure, and can be blocked, screened, or the quantity and energy of the structure. Therefore, by the charged material of the plasma Direct regulation, without the need to change, the process parameters of the rolling force, the temperature of the rolling body, the RF frequency, the gas composition, etc., and then increase and increase the plasma (or gas phase) =: i 11 M368892 degrees of freedom; Charged material under the electric field or electromagnetic field Into the plasma region 20, which can increase the gas reaction efficiency of plasma cracking into the plasma region 2 ,, and can produce high-density plasma in a lower vacuum (higher pressure), that is, near normal pressure a (cold) electric table in a pressure environment. Or, to regulate the electron energy between 30 and 90 eV, the electron impact of this energy will eliminate the stress on the substrate or film after etching or after growth. Damage repair for non-heating annealing-process. On the other hand, 'the direct control of the charged plasma filter device 1 to the charged plasma material' will be the semiconductor low dielectric film etching The problem of conversion efficiency, yield and manufacturing cost of flat panel development/film substrate coating and thin film solar energy is proposed. For example, in the process of vapor phase etching, the response of the tongue chemical to the substrate is Isotropic etching. Anisotropic etching must be achieved by the interaction of active chemicals with ions to etch the substrate, and the anisotropic etching is dry etching. An essential method for road patterns. However, excessive or excessive ions can cause damage to the etched circuit, substrate or deposited film. For example, the average energy of Ludang ions is no more than 10 electrons volts per deposited atom ( Ev) Above, the properties, quality and growth rate of the deposited film will be modified, and at the same time, the deposited film will not be damaged by excessive and excessive impact of the ions (including deposition, etc.). After the regulation, the ions are moderate. Only the substrate (ie, the deposition material) is struck, and the conversion of the impact kinetic energy increases the mobile power of the sediment and the substrate on the substrate, thereby achieving the effect of growing the deposited film at a lower substrate temperature. The lightness of the deposited film can be applied to low temperature substrates such as 12 M368892 plastic coating. This creation can be applied to a variety of plasma vapor phase processes, for example, in the vapor phase thin film deposition process, using argon (Argon), hydrogen (H2) and Shi Xi - 曱 (SiH4) for chemical vapor deposition growth Amorphous hydrogenation dreams ' (Hydrogenated Amorphous Silicon Film; a-Si-H λ ^ , , et al (1), for example, injecting rat gas and nitrogen into the plasma region 2 Q of the electropolymerization reaction chamber 2, and injecting the alkane The process of the deposition zone is described. Neutral activation of the original _. ', D3 V 3 gas and hydrogen) can pass through the sieve structure 10 without being affected by its internal electric and magnetic fields. When protons, argon ions and electrons pass through the filter structure I0, the quantity, energy or quantity and energy they pass will be affected by the internal electric field or electromagnetic field of the enthalpy, body 10 to achieve the role and purpose of screening and regulation. . The plasmonic material after screening and regulation will be subjected to a proliferative reaction with Shixijia, and the gas after the reaction mixture will be made to interact with the substrate 2 to grow an amorphous yttrium hydride film. By screening and controlling the radical, argon activation, proton, argon and electrons in the plasma filter device 1 of the present invention, the mixed gas which is optimally deposited by reacting with the methane is obtained to extract the deposition. The growth rate, yield, and manufacturing cost of the film are reduced; and the substrate temperature required for the process can be further reduced. For example, the plasma filter screen can set the energy of electrons between 8 and 13 electron volts. The reaction of electrons and hydrogen atoms with methane can produce (SiH3; Silyl). The main ruthenium deposition material further improves the growth rate, quality, yield and manufacturing cost of the amorphous yttrium hydride film, and contributes to the process of thin solar energy or flat panel development. Furthermore, the characteristics of the creation are illustrated by a plasma etching process. Please refer to the 13th M368892 4's. The plasma screen device 1 of the present invention is applied to the plasma etching process equipment (1) (the control circuit system 1 1 is not shown). The plasma region 2 of the electropolymerization reaction chamber 2 is placed on the screen structure body, and the wafer (ie, the substrate 2 1) is carried on a wafer base 22 and located in the sieve body. Below the 〇, the gas of the same engraving is all in the electric area of the room 2. The gas in the last name will be electrolyzed to form a part or the state of the ionized gas of the king. Therefore, the plasma includes electrons, ions, atoms, molecules, and neutral radicals. The substance in the plasma will pass through the sieve. The structure can reach the wafer for reaction. In addition, as shown in the fourth figure, the conductor structure 丄0 3 of the screen structure body 1 includes a peripheral conductor 1 0 3b and a conductor layer body i 〇 3a, and the outer edge of the conductor layer body 〇 3 & Surrounded by a peripheral conductor 1 〇 3 b , this peripheral conductor 丄〇 3 b shields the electromagnetic wave in the cell chamber 2 (e.g., plasma region 2 Q) from the internal electric field of the 结构 结构 structure 1 〇. In the general case, the peripheral conductor 1 0 3 b is grounded. The inside of the screen structure body 1 is provided with two conductor layer bodies 10 3a which are separated from the peripheral conductors 1 〇 3b by an insulating layer body 10 2 a. The distance between the two conductor layers 丄〇 3 a is 0.5 to 2.0 cm. The planar shape of the screen structure 1 实质上 is substantially the same as the wafer, and the size of the screen structure 1 将 will be slightly larger than the wafer size. For example, when applied to a 200mm process equipment, the screen size of the screen structure 1 本 of this creation will be slightly larger than 200min. Further, a plurality of holes 1 〇 1 are uniformly distributed in the plane of the sieve structure 10, and the diameter of each of the holes 1 〇 1 is 0.005 to 0.02 cm, and the center distance of the holes 1 〇 1 is 〇.〇1 to 0.06 cm. When the plasma material flows through the hole to penetrate the filter 14 M368892 structure, the two electric fields generated by the two inner conductor layers 3a will affect the passage of the charged substance to reach the wafer. The amount of ions or / and energy. Therefore, an optimized neutral activated radical species, a combination of ions and electrons in the gas phase can be produced, and in the case of no (4) (such as a low dielectric crucible), the effect of the desired circuit pattern is drawn. . This creation department proposes a kind of electric sieve device, which is used to filter and adjust the plasma f by the internal electricity, and the sieve of the electropolymer sieve device i The structure has a plurality of holes 1 Ο 1, the holes; the size, shape, number, and distribution of the L 〇i: the density will be determined according to the equipment and process requirements of the plasma filter (4) U. In addition, the assembly structure of the upper insulation joint Q 2 and the guide structure i 〇 3 can also be adjusted according to the requirements of practical applications, and is not limited to the above embodiments. In summary, the creation has the following advantages: 1. The plasma filter device of the present invention can be assembled in different sizes and characteristics.
電聚設備與各種物理、化學氣相製程，以提昇與增進 設備、製程的能力。 θ 2、本創作之電漿料裝置，能對質子、電子、離子（如 氬氣離子）之數量與能量做直接有效的調控。 惟以上所述僅為本創作之較佳實施例，非意欲偈限本 創作之專利保護範圍，故舉凡利本創作說明書及圖式内 谷所為之等效變化，均同理皆包含財創狀權利保 圍内，合予陳明。 15 M368892 【圖式簡單說明】 第一圖係為本創作之電漿濾篩裝置之應用示意圖。 第二圖係為本創作之電漿濾篩裝置之濾篩結構體的結構 示意圖。 第二A圖係為本創作之電聚渡_裝置之濾篩結構基本損 件中導體與絕緣體疊合板之一實施例之結構示音圖^ 第二B圖係為本創作之電《篩農置之渡篩：體 一實施例之結構示意圖。 再菔的弟 第三A圖係為本創作之電漿濾篩| 二實施例之結構示意圖。 置之濾篩結構體的第 第三B圖係為本創作之電漿攄 三實施例之結構示意圖。 篩裴置之濾篩結構體的第 第三C圖係為本創作之電漿濾篩襞 四實施例之結構示意圖。 置之濾篩結構體的第 第四圖係為本創作之電漿濾篩襞 之示意圖。 置應用於電漿飿刻設備 【主要元件符號說明】 1 電漿濾篩裝置 10 濾篩結構體Electro-polymerization equipment and various physical and chemical vapor processes to enhance and enhance equipment and process capabilities. θ 2. The electric slurry device of the present invention can directly and effectively regulate the quantity and energy of protons, electrons, ions (such as argon ions). However, the above description is only a preferred embodiment of the present invention, and it is not intended to limit the scope of patent protection of the present creation. Therefore, the equivalent change of the creation manual and the graphic interior of the valley is the same as the financial creation. Within the scope of the rights guarantee, he will be given to Chen Ming. 15 M368892 [Simple description of the diagram] The first diagram is a schematic diagram of the application of the plasma filter device. The second figure is a schematic view of the structure of the sieve structure of the plasma filter device of the present invention. The second A picture is the structural sound map of one embodiment of the conductor and the insulator laminated plate in the basic damage device of the electric filter of the device. The second B picture is the creation of the electricity The screen of the body is a schematic diagram of the structure of the body. The third A picture is the schematic of the plasma filter screen of the present invention. The third B-picture of the sieve structure is a schematic structural view of the third embodiment of the plasma. The third C-picture of the screen structure of the screen is the schematic diagram of the fourth embodiment of the plasma screen. The fourth picture of the sieve structure is a schematic diagram of the plasma filter screen of the present invention. Applied to plasma engraving equipment [Main component symbol description] 1 Plasma filter unit 10 Filter screen structure
1 〇 0 磁力模組 1 0 1 孔洞 1 0 2 絕緣結構 L 〇 2a 絕緣層體 16 M368892 10 2b 絕緣體 1021 絕緣結構孔位 103 導體結構 ' 10 3a 導體層體 10 3b 外圍導體 • 1031 導體基板孔位 11 控制電路系統 • 2 電漿反應室 2 0 電漿區域 2 1 基板 2 2 晶圓基座 171 〇0 Magnetic Module 1 0 1 Hole 1 0 2 Insulation Structure L 〇2a Insulation Layer 16 M368892 10 2b Insulator 1021 Insulation Structure Hole Position 103 Conductor Structure ' 10 3a Conductor Layer 10 3b Peripheral Conductor • 1031 Conductor Substrate Hole 11 Control circuit system • 2 plasma reaction chamber 2 0 plasma area 2 1 substrate 2 2 wafer base 17