CN101964301A - Plasma filter screen device, plasma screening method and plasma equipment thereof - Google Patents
Plasma filter screen device, plasma screening method and plasma equipment thereof Download PDFInfo
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- CN101964301A CN101964301A CN2009101604718A CN200910160471A CN101964301A CN 101964301 A CN101964301 A CN 101964301A CN 2009101604718 A CN2009101604718 A CN 2009101604718A CN 200910160471 A CN200910160471 A CN 200910160471A CN 101964301 A CN101964301 A CN 101964301A
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Abstract
The invention discloses a plasma filter screen device, a plasma screening method and plasma equipment thereof. The plasma filter screen device comprises a filter screen structural body which is provided with a plurality of holes and comprises a conductor structure, an insulating structure and a control circuit system, wherein the control circuit system is coupled with the conductor structure; and the plasma filter screen device further comprises a side magnetic module. The plasma filter screen device is applied in plasma chamber equipment and can be used for controlling and screening the quantity and energy of ions (containing protons) and electrons so as to achieve the optimality of the process.
Description
Technical field
The present invention relates to a kind of plasma screen device, plasma screen method and plasma apparatus thereof, relate in particular to plasma screen device, plasma screen method and the plasma apparatus thereof of a kind of microcosmic regulation and control plasma intermediate ions (containing proton) and characteristic electron.
Background technology
Plasma physics, chemical gaseous phase etching or film deposition techniques are applied to the existing suitable history of industrial quarters.The phenomenon or the state of plasma one etymology subregion when nineteen twenty-six in Christian era Langmuir definition electrode discharge.After this, plasma is used to describe the state of part (or all) ionized gas, comprises materials such as electronics, ion (containing proton), atom, molecule and neutral free radical in the plasma.Plasma is the state in a kind of quasi-electroneutrality, and the four condition of the material of being known as.At plasmas that technology adopted such as semiconductor, plated film or surfactions is cold plasma (Cold Plasma), that is to say that the temperature of electronics, ion (containing proton), atom, molecule and free radical material in the plasma is all inequality.Have only the character of quasi-electroneutrality constant in fact in the characteristic of cold plasma, other character all can have the change of related parameter such as gas temperature, pressure, rf frequency or the like to change with plasma.
The characteristic of above-mentioned plasma can make plasma have various character states, in order to the application of industrial quarters.In 20th century, plasma physics, chemical gaseous phase technology are by the extensive and successful manufacturing that is applied to microelectronics, dull and stereotyped development, solar cell (plate) and photoelectric sensor.For example: plasma physics, chemical gaseous phase etching, promptly so-called dry ecthing (Dry Etching) The Application of Technology with constantly promote, make the technological development of integrated circuit get constantly and grow up in the mode of multiple, also brought up the fast development of semi-conductor industry.Again for example the application of plasma physics, chemical gaseous phase film deposition techniques with constantly promote, make the area size of substrate film coating be able to amplification again and again, cause shooting up of the dull and stereotyped industry of developing equally.And now, plasma chemistry gas phase membrane deposition technique is applied to developing thin film solar industry just rapidly.
Yet plasma physics, chemical gaseous phase technology face some new challenges again in industry such as semiconductor, dull and stereotyped development and thin film solars.For example: because low dielectric film material (Low-k Dielectric) all contains hole, and its hardness and the also far low traditional dielectric material of intensity.In the process of dry-etching (DryEtching), how can not damage the low dielectric film material and etch desired circuit pattern, promptly be the challenge of article on plasma body etching technique.And for example in flat board development industrial aspect, how to reduce the required technological temperature of substrate and can carry out plated film, and then relax the condition that base material is selected, also be that the breakthrough of reaching is wanted in the dull and stereotyped industry of developing.Moreover, how with the plastic cement plated film that base material carries out big planar dimension, be a challenge of article on plasma body physics, chemical gaseous phase film deposition techniques equally.And for example in the thin film solar industrial aspect, how promoting conversion efficiency, the increase yield of solar energy film and reduce manufacturing cost, also is a kind of challenge of article on plasma body chemical gaseous phase film deposition techniques.
Summary of the invention
Edge is, the improving of the above-mentioned defective of inventor's thoughts proposes a kind of reasonable in design and effectively improve the present invention of above-mentioned defective.
Main purpose of the present invention, be to provide a kind of plasma screen device, plasma screen method and plasma apparatus thereof, this plasma screen device can be incorporated in the plasma apparatus, and in physics, chemical gaseous phase etching or film deposition process, effectively control and quantity and the energy of screening ion (containing proton) with electronics, and further control plasma characteristics, plasma physics, chemical gaseous phase composition in the reative cell, and etching or thin film deposition parameter, to reach technology optimization purpose.
In order to reach above-mentioned purpose, the invention provides a kind of plasma screen device, it comprises: a screen structure, it has a plurality of holes, and wherein this screen structure comprises: a conductor structure and an insulation system; And a control circuit system, it is coupled to this conductor structure.This plasma screen device more can contain a side magnetic force module.
In order to reach above-mentioned purpose, the invention provides a kind of plasma screen method, step is as follows: a plasma equipment is provided and installs plasma screen device of the present invention in the plasma-reaction-chamber of this plasma equipment; And be created on plasma when zone in this plasma reative cell when plasma, and the electric field that utilizes this plasma screen device to be produced, screening is by the material of this plasma screen device.
The present invention also provides a kind of plasma apparatus, it comprises a plasma reative cell, be equipped with a substrate in this plasma reative cell, the plasma zone of this plasma equipment in this plasma reative cell forms plasma, be equiped with a plasma screen device in this plasma reative cell, this plasma screen device is positioned at this below, plasma zone with respect to this substrate, this plasma screen device comprises that a screen structure and is coupled to the control circuit system of this screen structure, this screen structure is made up of a conductor structure and an insulation system, and this screen structure has a plurality of holes.
The present invention has following useful effect: the plasma screen device that the present invention proposes, it comprises a plurality of holes, so that plasma species can be passed through, when the conductor structure of screen structure is switched on, portion produces one or several electric fields within it, electronics in the plasma species, proton, when cation or anion pass through this plasma screen device, will be subjected to the influence of the intensity and the polarity (Polarity) of above-mentioned internal electric field or electromagnetic field, and stop, screen above-mentioned ion (containing proton) and electronics, and then regulate and control above-mentioned ion (containing proton) and quantity and the energy of electronics by this plasma screen device.
For enabling further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing, yet accompanying drawing only provide with reference to and the explanation usefulness, be not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the application schematic diagram of plasma screen device of the present invention.
Fig. 2 is the structural representation of the screen structure of plasma screen device of the present invention.
Fig. 2 A is the structural representation of an embodiment of conductor and insulator superimposed sheet in the screen structure basic building block of plasma screen device of the present invention.
Fig. 2 B is the structural representation of first embodiment of the screen structure of plasma screen device of the present invention.
Fig. 3 A is the structural representation of second embodiment of the screen structure of plasma screen device of the present invention.
Fig. 3 B is the structural representation of the 3rd embodiment of the screen structure of plasma screen device of the present invention.
Fig. 3 C is the structural representation of the 4th embodiment of the screen structure of plasma screen device of the present invention.
Fig. 4 is applied to the schematic diagram of plasma etching equipment for plasma screen device of the present invention.
Description of reference numerals in the above-mentioned accompanying drawing is as follows:
1 plasma screen device
10 screen structures, 100 magnetic force modules
101 holes
102 insulation systems
The 102a insulator layer
The 102b insulator
Position, 1021 insulation system hole
103 conductor structures
103a conductor layer body
The 103b peripheral conductors
Position, 1031 conductor substrate hole
11 control circuit system
2 plasma-reaction-chambers
20 plasma zones
21 substrates
22 wafer bases
Embodiment
See also Fig. 1, the invention provides a kind of plasma screen device 1, this plasma screen device 1 mainly is installed among the plasma reative cell 2 and (is positioned at 20 belows, plasma zone with respect to substrate 21), to carry out (comprising charged particle by the material of this plasma screen device 1, plasma materials such as gaseous substance) screening operation, this plasma screen device 1 comprises that a screen structure 10 and is coupled to the control circuit system 11 of this screen structure 10, and this plasma screen device 1 mainly is to utilize this this screen structure 10 of control circuit system 11 controls to produce electric field, advances with the material of screening by the screen structure 10 of this plasma screen device 1.
Please refer to Fig. 2, this screen structure 10 comes down to a structure with a plurality of holes 101, please cooperate Fig. 2 A and Fig. 2 B, this screen structure 10 comprises an insulation system 102 and a conductor structure 103, and this control circuit system 11 is coupled to this conductor structure 103, to produce the electric field of screening effect.
The basic building block of screen structure 10 is the superimposed sheet of conductor plate, insulation board or conductor and insulator.Wherein the superimposed sheet of conductor and insulator please refer to Fig. 2 A and Fig. 2 B.This conductor structure 103 includes a conductor layer body 103a with position, a plurality of conductor substrates hole 1031 among Fig. 2 A, this insulation system 102 includes an insulator layer 102a with position, a plurality of insulation systems hole 1021, this conductor layer body 103a and this insulator layer 102a be superimposed up and down (in the present embodiment, insulator layer 102a is superimposed on conductor layer body 103a), and position, described conductor substrate hole 1031 forms described hole 101 with position, described insulation system hole 1021.
Please refer to Fig. 2 B, it can be outside the basic building block of this screen structure, it also is the change shape of first embodiment of plasma screen device 1 of the present invention, wherein this conductor structure 103 includes two conductor layer body 103a with position, a plurality of conductor substrates hole 1031, this insulation system 102 includes an insulator layer 102a with position, a plurality of insulation systems hole 1021, this insulator layer 102a is held between this two conductor layers body 103a, and the 1021 corresponding arrangements in position, described conductor substrate hole 1031 and position, described insulation system hole are to form described hole 101.
Therefore, by first embodiment, the conductor structure 103 of plasma screen device 1 can include, and one or more (not waiting as two to six) have the conductor layer body 103a of position, a plurality of conductor substrates hole 1031,102 of this insulation systems include one or more insulator layer 102a with position, a plurality of insulation systems hole 1021 equally, in other words, the present invention does not limit quantity and the compound mode of above-mentioned conductor layer body 103a and insulator layer 102a.When the quantity of conductor layer body 103a and insulator layer 102a all is most, described insulator layer 102a and described conductor layer body 103a are superimposed up and down alternately, by the isolated adjacent conductor layer body 103a of insulator layer 102a, and the 1021 corresponding arrangements in position, described conductor substrate hole 1031 and position, described insulation system hole to be forming described hole 101, and above-mentioned corresponded manner can be the dislocation form or arrange over against the position mode.
Please refer to Fig. 3 A, it is second embodiment of plasma screen device 1 of the present invention, itself and the first embodiment difference are that this insulation system 102 is made up of insulator 102b, and this insulator 102b does not have the position, insulation system hole 1021 of the foregoing description, in other words, in the present embodiment, this conductor structure 103 includes two conductor layer body 103a with position, a plurality of conductor substrates hole 1031,102 of this insulation systems include an insulator 102b, this insulator 102b clamping is between this two conductor layers body 103a, and this insulator 102b is arranged at the side of this two conductor layers body 103a, avoiding blocking position, described conductor substrate hole 1031, and the position, described conductor substrate hole 1031 of 103a is corresponding to mutually to form described hole 101 on the described two conductor layer bodies.On the other hand, in the present embodiment, position, described conductor substrate hole 1031 on this two conductor layers body 103a is partly corresponding to mutually to form described hole 101, also is that arrange for the correspondence of dislocation form position, described conductor substrate hole 1031, to produce different screen effects.
Please refer to Fig. 3 B, it is the 3rd embodiment of plasma screen device 1 of the present invention, this conductor structure 103 includes three conductor layer body 103a with position, a plurality of conductor substrates hole 1031,102 of this insulation systems include two insulator 102b, each this insulator 102b clamping is between two adjacent conductor layer body 103a, and this insulator 102b is arranged at the side of this conductor layer body 103a, avoiding blocking position, described conductor substrate hole 1031, and the position, described conductor substrate hole 1031 on this two conductor layers body 103a is corresponding to mutually to form described hole 101; In the present embodiment, position, described conductor substrate hole 1031 is fully mutually corresponding to form described hole 101, and in other words, arrange in the mode over against the position position, described conductor substrate hole 1031, to form described hole 101.
Please refer to Fig. 3 C, it is the 4th embodiment of plasma screen device 1 of the present invention, itself and previous embodiment difference are, this plasma screen device 1 also includes a magnetic force module 100 that is arranged at these screen structure 10 sides, and this magnetic force module 100 can be magnet ring or electromagnet, and the internal electric field that this screen structure 10 is produced can be attended by galvanomagnetic effect.
Therefore, comprehensive first to fourth embodiment, the conductor structure 103 of this plasma screen device 1 include the conductor layer body 103a that one or more (containing two to six conductors does not wait) have position, a plurality of conductor substrates hole 1031; This insulation system 102 then includes one or more insulator layer 102a with position, a plurality of insulation systems hole 1021, and/or include one or more insulator 102b, described conductor layer body 103a and described insulator 102a are superimposed up and down alternately, and each this insulator 102b is arranged at the side of two adjacent this conductor layer body 103a.In other words, the present invention does not limit quantity and the compound mode of above-mentioned conductor layer body 103a and insulator layer 102a, 102b.And 1031 in described conductor substrate hole and the 1021 corresponding arrangements in position, described insulation system hole are to form described hole 101, and the position, described conductor substrate hole 1031 on the described conductor layer body 103a is corresponding to mutually to form described hole 101; In addition, above-mentioned corresponded manner can be dislocation or arranges over against the mode of position.
On the other hand, the voltage of each conductor layer body 103a, the magnitude of current, frequency all can independently be controlled, and its electric current also may be pulsed (Pulse) or continous way.And after this screen structure 10 and control circuit system 11 assemblings, can combine with existing plasma apparatus, and the control circuit system 11 of this plasma screen device 1 also will be set according to the demand of plasma apparatus and technology.
Refer again to Fig. 1, and the specific embodiment of cooperation Fig. 2 to Fig. 3 C, the present invention more proposes a kind of plasma apparatus with plasma screen device 1, this plasma screen device 1 can be applicable in the technology of physics, chemical gaseous phase, and can be assembled in easily in the employed plasma apparatus of present industry.As shown in Figure 1, this plasma screen device 1 is installed in the plasma-reaction-chamber 2, the plasma zone 20 of plasma-reaction-chamber 2 is formed at the top of this plasma screen device 1, substrate 21 is then below the screen structure 10 of this plasma screen device 1, therefore, the material of plasma generation will just can arrive substrate 21 by screen structure 10.And will be according to the demand of plasma apparatus and technology, all gas of injected plasma reative cell 2 is the plasma zone 20 of injected plasma reative cell 2 all; Or the plasma zone 20 of the gas injected plasma reative cell 2 of some only, remaining gas then flows into the zone between screen structure 10 and the substrate 21.
When plasma species is passed through the screen structure 10 of this plasma screen device 1, the conductor structure 103 of screen structure 10 can be produced inner electric field or electromagnetic field by the driving of this control circuit system 11, to do screening and regulation and control at material charged in the plasma.For example: in the technology of semiconductor dry-etching, the free radical material (containing atom and molecule) of neutral activation will be by the hole 101 of screen structure 10, and not influenced by the internal electric field of this screen structure 10 or any of electromagnetic field; Otherwise when charge species passes through screen structure 10, its quantity, energy or quantity and energy will be subjected to the influence of the internal electric field or the electromagnetic field of this screen structure 10, and reach its screening and effect and the purpose regulated and control.Therefore the present invention can produce optimized neutral activation free radical material, ion (containing proton) makes up with the gas phase of electronics.Moreover the external electrical field that this screen structure 10 is produced almost is zero, can be assembled mutually with the plasma-reaction-chamber equipment that present industry is used so install, and can not cause other technologic influences.
In other words, the present invention more proposes a kind of plasma screen method of utilizing plasma screen device 1, it is installed in plasma screen device 1 in the plasma-reaction-chamber 2 of a plasma equipment, when plasma is created on plasma zone 20 in this plasma reative cell 2, the electric field or the electromagnetic field that utilize this plasma screen device 1 to be produced, screening is by the material of this plasma screen device 1, for example when plasma species is passed through screen structure 10, atom, molecule and neutral free radical material will not be subjected to the influence of internal electric field or electromagnetic field, and do not have any block by.But when the electronics in the plasma species, proton, cation or anion pass through screen structure 10, will be subjected to internal electric field or the intensity of electromagnetic field and the influence of polarity (Polarity) of screen structure 10, and can be prevented from, screen, can be or regulate and control it by the quantity and the energy of screen structure 10.So, direct regulation and control by screen structure 10 article on plasma body charge specieses, and must not change the technological parameter of the pressure, gas temperature, rf frequency, gas componant or the like of reaction, and then reach and promote and the ability and the degree of freedom that increase plasma (or gas phase) technology; And by the charge species under electric field or the electromagnetic field obstruction, can pass back into plasma zone 20, and can promote the gas reaction efficient in plasma pyrolysis injected plasma zone 20, and can in lower vacuum (higher pressure), produce high-density plasma, also promptly in being bordering on the pressure environment of normal pressure, produce (cold) plasma.Or, electron energy to be regulated and control between 30 to 90 electron-volts, the electronic impact of this energy can be to base material, film after the etching or the stress after growing up is eliminated or infringement is repaired, with annealing (anneal) technology of carrying out non-heated type.
On the other hand, the direct regulation and control of 1 pair of current-carrying plasma material of plasma screen device of the present invention, with can be the challenges such as conversion efficiency, yield and manufacturing cost of the etching of semiconductor low dielectric film material, dull and stereotyped development low temperature substrates plated film and thin film solar, solution has been proposed.For instance, in the technology of vapor phase etchant, active chemistry belongs to same tropism (Isotropic) etching to the reaction of substrate.Anisotropy (Anisotropic) etching then must be reached in etching substrates via active chemistry and ionic bombardment acting in conjunction, and anisotropy is etched to the indispensable method that dry-etching is made circuit pattern.Yet excessive or excessive ionic bombardment also can cause the infringement of etched circuit, substrate or deposit film.And for example, when the average energy of ion with respect to each deposition and atomic for being not more than 10 electron-volts (eV) when above, the character of deposited film, quality and growth rate can be improved, and can not cause (containing deposited material) infringement of deposited film simultaneously because of excessive, the excessive bump base material of ion.Therefore, by regulating and control back ion appropriateness bump base material (being deposited material), the conversion of bump kinetic energy is increased the mobile mechanomotive force of deposited material on base material, and reach to hang down the effect of base material temperature growth deposited film, make the technology of this deposit film can be applicable to low temperature substrates, as the plated film of plastic cement.
The present invention can be applicable to various plasma gas phase process, for example, in the technology of gas phase membrane deposition, utilizes argon gas (Argon), hydrogen (H
2) and silicomethane (SiH
4) carry out chemical vapor deposition growth amorphism hydrogenated silicon film (Hydrogenated Amorphous Silicon Film; A-Si:H) be example,, and the technology that silicomethane injects the deposition region done explanation the plasma zone 20 of argon gas and hydrogen injected plasma reative cell 2.The atom (containing argon gas and hydrogen) of neutral activation can pass through screen structure 10, and is not subjected to the influence of its internal electric field or electromagnetic field.And proton, argon ion and electronics be when the screen structure 10, and its quantity of passing through, energy or quantity and energy will be subjected to the influence of the internal electric field or the electromagnetic field of this screen structure 10, to reach screening and effect and the purpose regulated and control.And the plasma species after screening and the regulation and control will be carried out proliferation response with silicomethane, react mixed gas will have an effect with substrate 21, with growth amorphism hydrogenated silicon film.Screening and regulation and control by 1 pair of hydroperoxyl radical of plasma screen device of the present invention, argon activation base, proton, argon ion and electronics, and then obtain the mist that produces the optimization deposition with the silicomethane reaction, with the speed of growth, yield and the reduction manufacturing cost that promotes deposit film; And can further reduce the required substrate temperature of technology.For instance, this plasma screen device 1 can be regulated and control the energy of electronics between 8 to 13 electron-volts, and the reaction of the electronics of this energy and hydrogen atom and silicomethane can produce with (SiH
3Silyl) be main siliceous deposits material, and then improve growth rate, quality, yield and the manufacturing cost of amorphism hydrogenated silicon film, and help thin film solar or dull and stereotyped technology of developing.
Moreover, with plasma etch process feature of the present invention is described.Please refer to Fig. 4, it is applied to the schematic diagram (among the figure and not shown control circuit system 11) of plasma etch process equipment for plasma screen device 1 of the present invention.The plasma zone 20 of this plasma reative cell 2 is on screen structure 10, wafer (being substrate 21) then is carried on the wafer base 22 and is positioned at the below of this screen structure 10, simultaneously etched gas whole plasma zone 20 of injected plasma reative cells 2 then.Etching gas will be formed the state of part or all of ionized gas by electrolysis, therefore include materials such as electronics, ion, atom, molecule and neutral free radical in the plasma, the material in the above-mentioned plasma will just can arrive wafer by screen structure 10 and react.In addition, as shown in Figure 4, the conductor structure 103 of this screen structure 10 includes peripheral conductors 10
3b and conductor layer body 103a, the outer rim of this conductor layer body 103a is centered on by peripheral conductors 103b, and this peripheral conductor 103b will shield the influence of the electromagnetic wave in (as plasma zone 20) in the plasma-reaction-chamber 2 to the internal electric field of screen structure 10.Under general situation, peripheral conductors 103b is a ground connection.And the inside of screen structure 10 is provided with two conductor layer body 103a, is separated with insulator layer 102a between itself and the peripheral conductors 103b.Spacing between these two conductor layer body 103a is 0.5 to 2.0 centimeter.The flat shape of this screen structure 10 is same as wafer in fact, and the size of this screen structure 10 will be slightly larger than wafer size.For example, when being applied to the process equipment of 200mm, the planar dimension of this screen structure 10 of the present invention will be slightly larger than 200mm.In addition, be evenly distributed many holes 101 on the plane of this screen structure 10, the diameter of each hole 101 is 0.005 to 0.02 centimeter, and the center distance of hole 101 is 0.01 to 0.06 centimeter.Flow through hole 101 when passing screen structure 10 when plasma species, and two electric fields that conductor layer body 103a is produced of its inside will influence passing through of charge species, arrive the amount of ions and/or the energy of wafer with regulation and control.Therefore can produce the gas phase combination of optimized neutral activation free radical material, ion and electronics, and under the situation of not damaging wafer (as the low dielectric film material), reach the effect that etches desired circuit pattern.
The present invention proposes a kind of plasma screen device 1, its with the electric field of inside to plasma species by this device, carry out the screening and the regulation and control of plasma species, and have a plurality of holes 101 on the screen structure 10 of this plasma screen device 1, the size of described hole 101, shape, quantity, distribution and density will be decided according to the equipment and technology demand of using this plasma screen device 1.In addition, above-mentioned insulation system 102 also can be adjusted according to the demand in the practical application with the package assembly of conductor structure 103, does not exceed with the foregoing description.
In sum, the present invention has following all advantage:
1, plasma screen device of the present invention can be assembled in the plasma apparatus of different size, characteristic and various physics, chemical gaseous phase technology, to promote the ability with enhancement equipment, technology.
2, plasma screen device of the present invention can be done directly effectively regulation and control to the quantity and the energy of proton, electronics, ion (as argon gas ion).
The above only is preferred embodiment of the present invention, non-ly is intended to limit to scope of patent protection of the present invention, so the equivalence of using specification of the present invention and accompanying drawing content to do such as changes, all in like manner all is contained in the claim of the present invention.
Claims (10)
1. a plasma screen device is characterized in that, comprising:
One screen structure, it has a plurality of holes, and wherein this screen structure comprises:
One conductor structure and an insulation system; And
One control circuit system, it is coupled to this conductor structure.
2. plasma screen device as claimed in claim 1, it is characterized in that: this conductor structure includes at least one conductor layer body with position, a plurality of conductor substrates hole, this insulation system includes at least one insulator layer with position, a plurality of insulation systems hole, and described position, a plurality of conductor substrates hole and position, described a plurality of insulation systems hole form described a plurality of hole.
3. plasma screen device as claimed in claim 2 is characterized in that: this control circuit system is coupled to described at least one conductor layer body, and this control circuit system is independently controlled voltage, electric current or the frequency of each described conductor layer body.
4. plasma screen device as claimed in claim 1, it is characterized in that: this conductor structure includes a plurality of conductor layer bodies with position, a plurality of conductor substrates hole, this insulation system includes a plurality of insulators, described conductor layer body and described a plurality of insulator are superimposed up and down alternately, and each insulator is arranged between two adjacent these conductor layer bodies, each insulator is positioned at the side of this conductor layer body, and the position, described a plurality of conductor substrates hole on the described conductor layer body is corresponding to mutually to form described a plurality of hole.
5. plasma screen device as claimed in claim 1 is characterized in that: this conductor structure includes at least one peripheral conductors and at least one conductor layer body, and this peripheral conductors is around the periphery of this conductor layer body.
6. plasma screen device as claimed in claim 1 is characterized in that: comprise that also one is arranged at the magnetic force module of this screen structure side.
7. plasma apparatus, it is characterized in that, comprise: a plasma reative cell, be equipped with a substrate in this plasma reative cell, the plasma zone of this plasma equipment in this plasma reative cell forms plasma, it is characterized in that, be equiped with a plasma screen device in this plasma reative cell, this plasma screen device is positioned at this below, plasma zone with respect to this substrate, this plasma screen device comprises that a screen structure and is coupled to the control circuit system of this screen structure, this screen structure is by a conductor structure and the superimposed moulding up and down of insulation system institute, and this screen structure has a plurality of holes.
8. a plasma screen method is characterized in that, may further comprise the steps:
Plasma screen device in the plasma-reaction-chamber that one plasma equipment and one is installed in this plasma equipment is provided; And
When plasma is created on plasma when zone in this plasma reative cell, the electric field that utilizes this plasma screen device to be produced, screening is by the material of this plasma screen device.
9. plasma screen method as claimed in claim 8, it is characterized in that: in the step of screening by the material of this plasma screen device, the charge species that electric field stopped that is produced by this plasma screen device is back to this plasma zone.
10. plasma screen method as claimed in claim 8, it is characterized in that: in the step of screening by the material of this plasma screen device, by the electric field that this plasma screen device is produced, may command is by the quantity and the energy of ion, proton or the electronics of this plasma screen device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101604718A CN101964301A (en) | 2009-07-23 | 2009-07-23 | Plasma filter screen device, plasma screening method and plasma equipment thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101604718A CN101964301A (en) | 2009-07-23 | 2009-07-23 | Plasma filter screen device, plasma screening method and plasma equipment thereof |
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| CN101964301A true CN101964301A (en) | 2011-02-02 |
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| CN2009101604718A Pending CN101964301A (en) | 2009-07-23 | 2009-07-23 | Plasma filter screen device, plasma screening method and plasma equipment thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106455282A (en) * | 2016-11-04 | 2017-02-22 | 中国工程物理研究院流体物理研究所 | Ion filtration method, grid with ion filtration function and neutron generator |
| CN106507576A (en) * | 2016-11-04 | 2017-03-15 | 中国工程物理研究院流体物理研究所 | The ionogenic ion filter device of metal hydride, method and neutron generator |
| CN109390197A (en) * | 2017-08-08 | 2019-02-26 | 北京北方华创微电子装备有限公司 | Pre-cleaning cavity and semiconductor processing equipment |
| CN117524866A (en) * | 2024-01-05 | 2024-02-06 | 上海谙邦半导体设备有限公司 | Repairing method and equipment for silicon carbide groove surface and semiconductor device |
-
2009
- 2009-07-23 CN CN2009101604718A patent/CN101964301A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106455282A (en) * | 2016-11-04 | 2017-02-22 | 中国工程物理研究院流体物理研究所 | Ion filtration method, grid with ion filtration function and neutron generator |
| CN106507576A (en) * | 2016-11-04 | 2017-03-15 | 中国工程物理研究院流体物理研究所 | The ionogenic ion filter device of metal hydride, method and neutron generator |
| CN109390197A (en) * | 2017-08-08 | 2019-02-26 | 北京北方华创微电子装备有限公司 | Pre-cleaning cavity and semiconductor processing equipment |
| CN117524866A (en) * | 2024-01-05 | 2024-02-06 | 上海谙邦半导体设备有限公司 | Repairing method and equipment for silicon carbide groove surface and semiconductor device |
| CN117524866B (en) * | 2024-01-05 | 2024-04-05 | 上海谙邦半导体设备有限公司 | Repairing method and equipment for silicon carbide groove surface and semiconductor device |
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Application publication date: 20110202 |