TWM364404U - Bonding structure between a LED substrate and heat-dissipation element - Google Patents

Bonding structure between a LED substrate and heat-dissipation element Download PDF

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Publication number
TWM364404U
TWM364404U TW098208546U TW98208546U TWM364404U TW M364404 U TWM364404 U TW M364404U TW 098208546 U TW098208546 U TW 098208546U TW 98208546 U TW98208546 U TW 98208546U TW M364404 U TWM364404 U TW M364404U
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TW
Taiwan
Prior art keywords
led
led substrate
heat dissipating
layer
heat
Prior art date
Application number
TW098208546U
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Chinese (zh)
Inventor
Yao-Chang Chen
Original Assignee
Yao-Chang Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Yao-Chang Chen filed Critical Yao-Chang Chen
Priority to TW098208546U priority Critical patent/TWM364404U/en
Publication of TWM364404U publication Critical patent/TWM364404U/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Led Device Packages (AREA)

Description

M364404 五、新型說明: 【新型所屬之技術領域】 本創作係-種接合結構是指—種LED基材與散熱元件間之 接合結構。 【先前技術】M364404 V. New description: [New technical field] The author-type joint structure refers to the joint structure between the LED substrate and the heat dissipating component. [Prior Art]

LED除了低耗電量、使用壽命長、低二氧化碳排放量等優勢外,發光 ^ 效率更是從2006年的50hn/W提高到2008年約1001m/W,也開啟了 LED • 從指示燈進展至LED照明產品新應用。然而,由於高功率LED輸入功率僅 有I5〜20%讎絲,其餘8G〜85·賴祕,若這些熱未適時排出至 外界’將導致LED晶粒界面溫度過高而影響發光效率與發光壽命,因此突 顯出LED熱管理的重要性。也就是說,如果能有效降低LED晶粒的界面溫 度’除了可提高光輸出強度與增加LED使用壽命外,還可以改善led的可 靠度、色彩穩定性。 鑑此,目前市面上已有將傳統LED晶片之低熱傳係數之基板替換為某 鲁一部分具有散熱塊(heat slug)之基板,以將LED晶片設置於高熱傳係數 ^ 材之基板上,以降低熱阻值,提升散熱能力。此外,更有於基板下方設置 "一散熱裝置的方式,以求更有效快速降低LED晶粒的界面溫度。但因應此 結構下,基板與散熱裝置兩者間如何產生緊密接合,達到快速導熱,且又 不損傷原先各元件,如LED螢光粉、打線等,成為目前一個極為重要的課 題0 有鑑於此’本創作遂針對上述習知技術之缺失,提出一種嶄新的LED 基材與散熱元件間之接合結構,以有效克服上述之該等問題。 M3 64404 【新型内容】 „ 本創作之主要目的在提供一種LED基材與散熱元件間之接合結構,其 係利用鎳層與低溫之錫鉍銀合金(snBi58Agl 0)或者錫鉍合金(snBi58) 直接且簡易的將LED基材之銅金屬塊與散熱元件緊密焊接接合,達到提高 散熱效果,並可降低生產成本,進而降低產品售價,提高LED燈具於市面 上的接受度。 本創作之另一目的在提供一種LED基材與散熱元件間之接合結構,其 係利用鎳層與低溫之錫鉍銀合金(SnBi58Agl 〇)或者錫鉍合金(SnBi58) 直接且簡易的將LED基材之銅金屬塊與散熱元件緊密焊接接合,可維持 LED螢光粉原有特性,避免製程高溫的傷害。 本創作之另一目的在提供一種LED基材與散熱元件間之接合結構,其 除具容易焊接之功效外’可去雜製散熱元件在加王過程巾所產生之外傷 刮痕,又可增加外k美麗。 為達上述之目的,本創作提出一種LED基材與散熱元件間之接合結 構’其中該LED基材包含有-銅金屬塊(Cu Slug ),以承載至少—LED晶 片’此接合結構包含有-接合於銅金屬塊下方的低溫合金材料層 ;以及' 接合於低溫合金材料層與散熱元件間的錄層。 茲為使貴審查委員對本創作之結構特徵及所達成之功效更有進一步 之瞭解與認識,謹佐讀佳之實施姻舰合詳細之說明,說明如後: 【實施方式】 清參閱第1圖’其係本創作之第一實施例示意圖。如圖所示,本創作 提供-種LED基材10與轉散熱元件12間之接合結構。此LED基材1〇 M364404 ί 包含有-銅金屬塊(CuSlug) 14,以承載至少一 LED晶片16,在咖基 材ίο上且於非銅金屬塊14的位置為低熱傳低導電之部分15且表面印刷有 電路佈局18 ’以利用導線17將LED晶片16打線接合至電路佈局18。le〇 晶片16上更覆蓋有-封圍19’其内表面塗佈有螢光粉。本創作之接合結構 包含有-接合於銅金屬塊14下方的低溫合金材料層2〇;以及一接合於低溫 ^ 合金材料層與散熱元件12間的鎳層22。 - 其中低溫合金材料層20之材料是錫叙銀合金(SnBi58Agl.〇)或者錫 | 叙合金(SnBi58 )。 本創作利用鎳層與低溫138°C之錫鉍銀合金(SnBi58Agl.O)或者錫鉍 合金(SnBi58)來直接且簡易的將LED基材之銅金屬塊位置與鋁製散熱元 件緊密焊接接合’減少熱量傳遞時的界面,達到提高散熱效果,並可於led 燈具生產組裝製程顧-工勒快速完成,省去委外加卫製作的各種生產 成本’如«與管理,進崎低產品售價,提高LED燈具於市面上的接受 度。 > 此外’因LED螢光粉在i8〇〇c以上會受到嚴重的損害,本創作使用的 "是138<>(:低溫焊接的合金’將可避免習知使用無錯焊錫製程,在過錫爐階段 . 至少217°C以上溫度對LED螢光粉的損害。 請再參閱第2圖,其與上述第丨圖之實施例差異在於第2圖中之錄層 24係直接鍍於鋁製散熱元件12外表面上,如此除具容易焊接之功效外可 去除銘製散熱元件在加工過程中所產生之外傷刮痕,又可增加外觀美麗。 ,唯以上所述者,僅為本創作之較佳實施例而已,並非用來限定本創作 實施之範圍。故即凡依本創作申請範圍所述之特徵及精神所為之均等變化 M364404 或修飾,均應包括於本創作之申請專利範圍内。 【圖式簡單說明】 第1圖係本創作之實施例示意圖。 第2圖係本創作之另一種實施例示意圖。 【主要元件符號說明】 10 LED基材 12散熱元件 14銅金屬塊 15部分 16 LED晶片 17導線 18電路佈局In addition to the advantages of low power consumption, long service life and low carbon dioxide emissions, the LED's efficiency has increased from 50hn/W in 2006 to about 1001m/W in 2008. LEDs have also been turned on. • From indicator light to New applications for LED lighting products. However, since the input power of the high-power LED is only I5~20%, the remaining 8G~85·, if these heats are not properly discharged to the outside world, the LED die interface temperature will be too high, which will affect the luminous efficiency and luminous lifetime. , thus highlighting the importance of LED thermal management. That is to say, if the interface temperature of the LED die can be effectively reduced, in addition to improving the light output intensity and increasing the life of the LED, the reliability and color stability of the LED can be improved. For this reason, a substrate having a low heat transfer coefficient of a conventional LED chip has been replaced with a substrate having a heat slug in a part of the market, so that the LED chip is placed on a substrate of a high heat transfer coefficient to reduce heat. Resistance, improve heat dissipation. In addition, there is a way to set a heat sink under the substrate in order to more effectively and quickly reduce the interface temperature of the LED die. However, in this structure, how to form a tight joint between the substrate and the heat sink to achieve rapid heat conduction without damaging the original components, such as LED phosphor powder, wire bonding, etc., has become an extremely important topic at present. In view of the lack of the above-mentioned prior art, the present invention proposes a new joint structure between the LED substrate and the heat dissipating component to effectively overcome the above problems. M3 64404 [New Content] „ The main purpose of this creation is to provide a joint structure between an LED substrate and a heat dissipating component, which uses a nickel layer and a low temperature tin-silver alloy (snBi58Agl 0) or a tin-bismuth alloy (snBi58) directly. And the copper metal block of the LED substrate is simply welded and joined with the heat dissipating component to improve the heat dissipation effect, and the production cost can be reduced, thereby reducing the product price and improving the acceptance of the LED lamp on the market. The object of the invention is to provide a joint structure between an LED substrate and a heat dissipating component, which is a copper metal block of an LED substrate directly and easily by using a nickel layer and a low temperature tin-silver alloy (SnBi58Agl®) or a tin-bismuth alloy (SnBi58). Tightly soldered to the heat dissipating component to maintain the original characteristics of the LED phosphor and avoid the high temperature damage of the process. Another object of the present invention is to provide a joint structure between the LED substrate and the heat dissipating component, which has the effect of being easy to solder. The external 'can be used to dissipate the heat-dissipating components to cause scratches and scratches in the process of adding the king's process towel, and to increase the beauty of the outer k. In order to achieve the above purpose, the present invention proposes a A bonding structure between the LED substrate and the heat dissipating component, wherein the LED substrate comprises a copper metal block (Cu Slug) to carry at least the LED chip. The bonding structure comprises a low temperature alloy material bonded under the copper metal block. Layer; and 'bonding layer between the layer of low-temperature alloy material and the heat-dissipating component. In order to make your reviewer have a better understanding and understanding of the structural features of the creation and the effects achieved, I would like to read the implementation of the marriage. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The following is a description of the first embodiment of the present invention. As shown in the figure, the present invention provides a kind of between the LED substrate 10 and the heat transfer element 12. Bonding structure. The LED substrate 1〇M364404 ί includes a copper metal block (CuSlug) 14 to carry at least one LED wafer 16 on the coffee substrate ίο and at a position of the non-copper metal block 14 for low heat transfer and low conductivity The portion 15 is printed with a circuit layout 18' for wire bonding the LED wafer 16 to the circuit layout 18 by means of wires 17. The wafer 16 is further covered with a seal 19' having an inner surface coated with phosphor powder. Creative knot The structure comprises a layer 2 of low temperature alloy material bonded under the copper metal block 14; and a nickel layer 22 bonded between the layer of the low temperature alloy material and the heat dissipating member 12. - wherein the material of the layer 12 of the low temperature alloy material is tin Silver alloy (SnBi58Agl.〇) or tin | Sn alloy (SnBi58). This design uses a nickel layer and a low temperature 138 ° C tin-silver alloy (SnBi58Agl.O) or tin-bismuth alloy (SnBi58) to directly and easily LED The position of the copper metal block of the substrate is tightly welded to the aluminum heat dissipating component. The interface at the time of heat transfer is reduced to improve the heat dissipation effect, and the production process of the LED lamp assembly can be quickly completed, and the production of the subconductor is eliminated. Various production costs 'such as « and management, into the low price of products, to improve the acceptance of LED lamps on the market. > In addition, because LED phosphor powder will be seriously damaged above i8〇〇c, the use of "138<>(:low-temperature soldered alloy' will avoid the use of error-free soldering process. In the tin furnace stage, the LED phosphor powder is damaged at a temperature of at least 217 ° C. Please refer to Fig. 2 again, which differs from the embodiment of the above figure in that the recording layer 24 in Fig. 2 is directly plated. On the outer surface of the aluminum heat dissipating component 12, in addition to the effect of easy soldering, it can remove the scratches caused by the inlaid heat dissipating component during the processing, and can increase the appearance of beauty. Only the above is only The preferred embodiment of the creation is not intended to limit the scope of the present invention. Therefore, any changes in the characteristics and spirit of M364404 or modifications as described in the scope of this application shall be included in the scope of application for this creation. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of an embodiment of the present invention. Fig. 2 is a schematic view showing another embodiment of the present invention. [Description of main components] 10 LED substrate 12 heat dissipating component 14 copper metal block 15 section 16 LED chip 17 wire 18 circuit layout

I 19封圍 20低溫合金材料層 22鎳層 24鎳層I 19 envelope 20 low temperature alloy material layer 22 nickel layer 24 nickel layer

Claims (1)

M364404 六、申請專利範圍: 1. 一種LED基材與散熱元件間之接合結構,其中該LED基材包含有—銅 金屬塊(Cu Slug) ’以承載至少一 LED晶片,該接合結構包含有: 一低溫合金材料層,其係接合於該銅金屬塊下方;以及 一鎳層,其係接合於該低溫合金材料層與該散熱元件間。 2. 如申請專概目第1項所述之LED紐錄齡讀間之接合結構,其 中該鎳層係塗設於該散熱元件之外表面上。 3. 如申請專利範圍第1項所述之LED基材與散熱件元件間之接合結構,其 中該低溫合金材料層之材料是錫鉍銀合金(SnBi58Agl 〇)。 4. 如申請專利範圍第1項所述之LED基材與散熱件元件間之接合結構,其 中該低溫合金材料層之材料是錫鉍合金(SnBi58)。 5. 如申請專利範圍第1項所述之LED基材與散熱件元件間之接合結構,在 該led基材上且於非該銅金屬塊(Cu slug)位置形成有至少—電路佈 局,以供該LED晶片打線接合。M364404 VI. Patent Application Range: 1. A bonding structure between an LED substrate and a heat dissipating component, wherein the LED substrate comprises a copper metal block (Cu Slug) to carry at least one LED chip, the bonding structure comprising: a layer of low temperature alloy material bonded under the copper metal block; and a nickel layer bonded between the layer of low temperature alloy material and the heat dissipating component. 2. The joint structure of the LED New Age Recording Interpretation as described in Item 1 of the application, wherein the nickel layer is coated on the outer surface of the heat dissipating member. 3. The joint structure between the LED substrate and the heat sink member according to claim 1, wherein the material of the low temperature alloy material layer is tin-bismuth silver alloy (SnBi58Agl®). 4. The joint structure between the LED substrate and the heat dissipating component according to claim 1, wherein the material of the low temperature alloy material layer is tin antimony alloy (SnBi58). 5. The bonding structure between the LED substrate and the heat dissipating component according to claim 1, wherein at least a circuit layout is formed on the LED substrate and at a position other than the copper metal block. The LED chip is wire bonded.
TW098208546U 2009-05-15 2009-05-15 Bonding structure between a LED substrate and heat-dissipation element TWM364404U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468287A (en) * 2010-11-17 2012-05-23 深圳东桥华瀚科技有限公司 Light emitting diode (LED) module and method for manufacturing same
CN102024883B (en) * 2009-09-10 2012-07-25 陈一璋 Preparation method of light-emitting diode radiating substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024883B (en) * 2009-09-10 2012-07-25 陈一璋 Preparation method of light-emitting diode radiating substrate
CN102468287A (en) * 2010-11-17 2012-05-23 深圳东桥华瀚科技有限公司 Light emitting diode (LED) module and method for manufacturing same

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