M359191 五、新型說明： 【新型所屬之技術領域】 本創作是有關於-種電路基板，特別是有關於一種導（散）熱 電路基板。 【先前技術】 目前’發光二極體之照明用途多规於其基板之散熱問題。其 籲中’金屬基覆銅板需具有良好的導熱性、電氣絕緣性和機械加工 性’為目前高功率發光二極體最主要的散熱基板。各種金屬基板 中，最常使用者為銘基板，基本結構包括三層，亦#基層、絕緣層 與電路層。 鋁板上層利用網印及壓合之技術塗佈一層高分子之導熱絕緣 材料’如環氧樹脂或其添加物等導熱係數為〇 lw/m_k至2w/m_k 之導熱絕緣材料。此為基板製作的核心技術，高分子聚合物構 成，熱阻大，無法承受過大的機械及熱應力。電路層則是在絕緣層 鲁上側利用壓合加上一層銅羯，由於此層需要製作印刷電路，使元件 的各個部件相互連接，因此要求具有較大的載流能力，需要使用較 厚的銅箔，一般厚度為15-280 μιη。其中，絕緣層所使用之材料多 為樹脂，此具較高熱阻之導熱絕緣材料之樹脂，其導熱能力仍無法 與陶瓷相提並論，且在高功率發光二極體(LED)之市場中，較高的 導熱係數可提供較高流明值，且對晶片（chip)而言，亦可提升1挤 光效率及穩定性。 x 紹、鎮、鈦及其合金在金屬-氧化物-電解液系統中具有電解閱 門的作用’德國學者稱之為閥金屬，當這類金屬浸入電解液時，通 M359191 金屬表面立即生成很騎—層氧化膜絕緣層，形成這層 =、、’、S賴TCit行舰氧㈣必要條件。紅件上杨的電屬超 ^界值時，絕緣膜上某些薄弱區域被擊穿，發生微弧放電現 表面產生麵的弧點或火花。由於擊穿總是在氧化膜相對 ^的部位發生’而氧化物絕緣膜被擊穿後，在該部位又生成了新 ^化膜’擊穿點轉移到其他相對薄弱的位置，導致最終形成均勾 古氧化，、。母個電弧存在的時·短，但賴放電區瞬間溫度很 > ΙΐΓ制8GG0K ’在如此高的溫度下，此區域㈣金屬及其氧 X炫化，使氧化物的結構發生改變。微弧氧化有別於傳統的 2極氧化處理’其工作電壓由#通的陽極氧化法拉第區推進到高壓 放電區域，完全超出了傳統陽極氧化的範圍。 有鑑於習知技藝之各項問題，為了能夠兼顧解決之，本創作人 =於多年研朗發與諸多實務經驗，提出—麵合材料（導）散熱 基板’以作為改善上述缺，點之實現方式與依據。 …、 【新型内容】 有鑑於此，本創作之目的在於提出一種不使用樹脂材料以接合 金屬基板與電路層之複合材料（導）散熱基板。 緣是，為達上述目的，依本創作之複合材料（導）散熱基板， ”包含-金屬基板、-多孔陶竟層以及一銅銀合金層。金屬基板 用以承載-高功率電子元件。多孔陶变層係以一微弧氧化方式形成 於金屬基板之上，多孔陶兗層之厚度係界於i微米到微^ 間。銅銀合金層則係先形成一銀層於多孔陶竟層之上，此銀居係 以喷塗、電鑛或蒸鍍之方式形成，再形成一鍍銅層於鑛銀層Z， 且銅銀合金層之厚度係界於微米到勘微米之間。其中，金屬 4 M359191 基板係由鋁、鎂、鈦或三者相互魬合形成。 :之樹脂材料來接合電路層與金屬基板 1知壓銅或鍍銅之電路層。 、θ乍為 、隹I為ί #輕委㈣糊作之技娜徵及所_之功效有更 步之瞭解與認識，謹佐以較佳之實施麻配合詳細之說明如 【實施方式】 ^下將參照相_式，說本創作較佳實麵之複合材料 〜2熱基板，為使便於理解，下述實施例中之相同元件係以相 同之付號標示來說明。 ^參閱第1圖’其係為本創作之複合材料（導）散熱基板之結 一圖。圖中，複合材料（導）散熱基板10包含一金屬基板11、 古夕⑽£層12及-銅銀合金層13。金屬基板丨〗係用以承載— 焉功率電子元件’此高功率電子元件可為—發光二極體；多孔陶是 層12係以一微弧氧化方式形成於金屬基板11之上，且多孔陶曼層 12之厚度較佳可界於丨微米到5〇〇微米之間；銅銀合金層13則^ ，开/成銀層於多孔陶瓷層12之上，此銀層係可以喷塗、電鍍或' 二鑛之方式$成，最後再形成一銅層於銀層之上，其中，銅廣亦可 以噴塗、魏或驗之方式形成，金屬基板係由銘、鎂、鈦或 相互組合形成。 f 其中，由於多孔陶瓷層12係以一微弧氧化方式所形成，因而 5 M359191 具有十分優良之纽層及微孔層。而此从陶賴u之導埶係數 可達40W/m-k以上’因而較習知導熱係數為〇 iw/m_k至篇㈣ 之樹脂接合方式為佳。此外，由於糾喊層i2十分平坦，銅銀 合金層13可以緻密地被形成於多孔陶瓷層12之上。 請^閱^ 2圖，其為本創作一實施例之複合材料（導）散教基 板之結構不賴。圖巾，銅銀合金層13係先以—電 於多孔陶錢12上形成—銀層，再以1鑛、喷塗或·之= 於鍍銀層上贼-_合錢13錄 界 路14於其上’以進行電路佈局，進而實現習知之電路声。 精神任何未脫離本創作之 請專利範圍中。 #^改或變更，均應包含於後附之申 【圖式簡單說明】M359191 V. New description: [New technical field] This creation is related to a kind of circuit substrate, especially related to a conductive (dispersion) thermal circuit substrate. [Prior Art] At present, the illumination use of the light-emitting diode is more than the heat dissipation problem of the substrate. It is said that the 'metal-clad copper clad plate needs to have good thermal conductivity, electrical insulation and machinability' as the most important heat-dissipating substrate of the current high-power light-emitting diode. Among the various metal substrates, the most common user is the Ming substrate, and the basic structure includes three layers, also a base layer, an insulating layer and a circuit layer. The aluminum plate is coated with a layer of high-molecular thermal conductive insulating material such as epoxy resin or its additives by a screen printing and pressing technique, such as a thermal conductive material having a thermal conductivity of 〇 lw/m_k to 2 w/m_k. This is the core technology of substrate fabrication. It is composed of high molecular polymer and has high thermal resistance and cannot withstand excessive mechanical and thermal stress. The circuit layer is laminated on the upper side of the insulating layer by pressing and adding a layer of copper enamel. Since this layer needs to make a printed circuit, the components of the component are connected to each other, so that a large current carrying capacity is required, and a thick copper is required. The foil is generally 15-280 μm thick. Among them, the material used for the insulating layer is mostly resin. The resin with high thermal resistance and thermal conductive material can not be compared with ceramics, and it is higher in the market of high-power light-emitting diode (LED). The thermal conductivity provides a higher lumen value and, for a chip, also increases the efficiency and stability of the extrusion. x Shao, Zhen, Titanium and their alloys have the function of electrolysis in the metal-oxide-electrolyte system. German scholars call it valve metal. When such metal is immersed in the electrolyte, the metal surface of M359191 is immediately formed. Riding - layer oxide film insulation layer, forming this layer =,, ', S Lai TCit line ship oxygen (four) necessary conditions. When the electric quantity of Yang on the red part is a super-limit value, some weak areas on the insulating film are broken down, and a micro-arc discharge occurs on the surface to generate a surface arc or spark. Since the breakdown always occurs at the opposite portion of the oxide film and the oxide insulating film is broken down, a new film is formed at this portion, and the breakdown point is transferred to other relatively weak positions, resulting in the final formation. Hook ancient oxidation,,. When the parent arc exists, it is short, but the instantaneous temperature in the discharge zone is very high. ΙΐΓ 8GG0K ′ At such a high temperature, the metal of this region (4) and its oxygen X eclipse, and the structure of the oxide changes. Micro-arc oxidation is different from the traditional 2-pole oxidation process. Its operating voltage is advanced from the anodized Faraday region of the #-pass to the high-voltage discharge region, completely beyond the scope of conventional anodization. In view of the various problems of the prior art, in order to be able to solve the problem, the creator = many years of research and development and many practical experience, proposed - surface material (guide) heat sink substrate 'to improve the above-mentioned defects, the realization of the point Ways and basis. ..., [New Content] In view of this, the purpose of this creation is to propose a composite (conductive) heat dissipation substrate that does not use a resin material to bond a metal substrate and a circuit layer. The edge is that, in order to achieve the above purpose, the composite material (conductive) heat-dissipating substrate according to the present invention includes "a metal substrate, a porous ceramic layer and a copper-silver alloy layer. The metal substrate is used to carry - high-power electronic components. Porous The ceramic layer is formed on the metal substrate by a micro-arc oxidation method, and the thickness of the porous ceramic layer is between i micrometer and micrometer. The copper-silver alloy layer first forms a silver layer in the porous ceramic layer. In the above, the silver system is formed by spraying, electro-minening or evaporation, and then a copper plating layer is formed on the mineral silver layer Z, and the thickness of the copper-silver alloy layer is between micron and micron. Metal 4 M359191 The substrate is formed by aluminum, magnesium, titanium or the like. The resin material is used to bond the circuit layer and the metal substrate 1 to the copper or copper-plated circuit layer. θ乍 is 隹I is ί #轻委 (4) The skill of the genius and the effect of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Better solid composite ~ 2 thermal substrates, for ease of understanding, the following The same components in the embodiment are denoted by the same symbol. ^ Refer to Fig. 1 ' is a diagram of the composite material (guide) heat sink substrate of the present invention. In the figure, the composite material (guide) heat sink substrate 10 includes a metal substrate 11, an ancient (10) layer 12 and a copper-silver alloy layer 13. The metal substrate is used to carry - 焉 power electronic components 'this high-power electronic component can be - light-emitting diode; porous ceramic The layer 12 is formed on the metal substrate 11 by a micro-arc oxidation method, and the thickness of the porous ceramic layer 12 is preferably between 丨μm and 5〇〇μm; the copper-silver alloy layer 13 is ^, / Silver layer on the porous ceramic layer 12, the silver layer can be sprayed, electroplated or 'dimines' way, and finally a copper layer is formed on the silver layer, wherein the copper can also be sprayed, Formed by Wei or the method, the metal substrate is formed by Ming, Magnesium, Titanium or a combination of each other. f Among them, since the porous ceramic layer 12 is formed by a micro-arc oxidation method, the 5 M359191 has a very good layer and micro Hole layer, and the coefficient of guidance from Tao Lai can reach 40W/mk It is preferable to use a resin bonding method in which the thermal conductivity is 〇iw/m_k to (4). Further, since the squeaking layer i2 is very flat, the copper-silver alloy layer 13 can be densely formed on the porous ceramic layer 12. Please read ^2, which is a good structure for the composite material (guide) of the creation of an embodiment. The towel, the copper-silver alloy layer 13 is first formed on the porous pottery 12 - silver Layer, and then 1 mine, spray or = on the silver plated layer on the thief - _ He Qian 13 recorded on the road 14 on it to carry out the circuit layout, and then realize the circuit sound of the conventional. Spirit does not leave this creation In the scope of the patent application, #^改改或改变,本应应应于下下申申 [Simplified description of the schema]
第1圖係為本創作之複合材料（莫 以及 1導）散熱基板之結構示意圖 散熱基板之結構 第2圖係為本創作一實施例之複合材料 示意圖。 【主要元件符號說明】 13 :銅銀合金層；以及 14 :電路。 10 :複合材料（導）散熱基板； 11 :金屬基板； 12 :多孔陶曼層； 6Fig. 1 is a schematic view showing the structure of a heat dissipating substrate of a composite material (mo and 1). The structure of the heat dissipating substrate Fig. 2 is a schematic view of a composite material according to an embodiment of the present invention. [Main component symbol description] 13: Copper-silver alloy layer; and 14: Circuit. 10: composite material (guide) heat sink substrate; 11: metal substrate; 12: porous ceramic layer; 6