M346917 八、新型說明： •【新型所屬之技術領域】 • 本創作係關於一種發光二極體，特指設計有一具有較 大反射區面積之殼體之發光二極體結構。 【先前技術】 發光二極體係一種可發光的半導體元件，其能夠高效 率地直接將電能轉化為光能，其擁有較長的使用壽命、耗 • 電里較低、體積小等等的優點。隨著近年來高亮度的發光 二極體的開發成功，使得發光二極體從過去只能用於指示 燈和儀錶顯示器，進步到成為液晶顯示的背光，再擴展到 電子照明及公眾顯示，如車用燈、大型影視牆，甚至是投 影機内的照明等等，一般普遍認為，發光二極體可望取代 白熾燈、螢光燈和高強度氣體放電燈等，發展成第四代光 源。 發光二極體晶片於使用前必須進行封裝，封裝的作用 _ 是將外引線連接到發光二極體的電極上，並且保護發光二 極體晶片正常工作。發光二極體根據不同的應用條件而有 ，許多種封裝形式，其中SMIKsurface mount device，表面 -“著）式I光一極體具備有體積小、適合自動化生產之優 點，而廣泛運用於通訊、電子產品等等之中。 參見第三圖所示，為一現有技術之SMD式發光二極體 之例，其包含有一殼體（20)、複數個導線架（21)、一封 衣膠體（22)、一晶片（23)以及一引線（24)，該殼體（2〇)上 内凹升/成有&室（25)，該容室（25)之開口於殼體（2〇)上 5 M346917 端並形成有一開口平面（27)，且容室（25)之壁面朝向開口 處呈外擴傾斜狀，而形成一反射區（2 6 )，導線架（2丨）係穿 〜 設於殼體（20)之底部，其一端平面並進入容室内，而形成 谷至（25)之底面，該晶片（23)係由封裝膠體（22)所包覆而 固定於容室（25)内之導線架（21)上，晶片（23)之發光部並 形成有一頂面（231)，該頂面（231)至容室（25)之開口（27) . 之間形成有一距離h，晶片（23)於其兩電極上並連接至少 ^ 有一條引線（24)，而引線（24)另一端連接至導線架（21)。 前述SMD式發光二極體，係利用該反射區（26)對晶片 (23)之部分發散角度的光束進行反射、折射等收斂動作， 而進行光度及色度之調整。 然而’前述現有技術之SMD式發光二極體，由於為了 獲得整體厚度較薄的成品，因此該頂面（231)至容室（25) 之開口（ 2 7 )之間形成之距離h僅設計為1 rain以下，使得該 殼體（20)内所形成之反射區（26)之面積狹小，因而由晶片 φ (23)所發出之無效光無法有效利用該反射區（26)進行集 中’或光線無法有效利用反射區（26)進行折射混光，而造 、成有光線的浪費及混色不均勻等現象，此外，由於晶片（23) -係以封裝膠體（22)包覆而固定於該容室（25)内，因此若形 成有反射區（26)之容室（25)之面積狹小，封裝膠體（22)之 使用量亦受到限制，而有因膠體厚度過薄，導致空氣中之 水氣易由反射區（26)之斜面與封裝膠體（22)間之空隙侵入 至晶片（2 3)以及引線（2 4 )區域，導致成品不良之缺點。 【新型内容】 6 M346917 有鑑於前述現有技術的不足點，本創作提供一種具有 、 較大面積的反射區的SMD式發光二極體，期望能解決前述 、 因反射區面積狹小，而造成光線的浪費及混色不均勻，以 及封裝膠體過薄導致成品不良等缺點。 為達成上述創作目的，本創作所使用的技術手段在於 提供一發光二極體結構，其包含有： 一设體，該殼體形成有一内凹之容室，該容室内形成 • 有呈外擴斜面狀之反射區； 複數個導線架，該導線架穿設位於殼體内，一端平面 並進入容室，而形成容室之底面； 至少一個晶片，該晶片係由封裝膠體所包覆而固定於 容室内之導線架上； 至少一引線’其一端連接於晶片之電極上，而另一端 連接於導線架上。 一封裝膠體，該封裝膠體係用以封裝晶片於容室内； _ 於上述發光二極體結構内，形成有反射區之容室，其 開口之平面至晶片發光面之距離，至少為1 _以上。 ， 相較於現有技術之SMD式發光二極體，本創作之se -式發光二極體之優點為在成品依然能夠滿足薄型化需求的 情況下，可獲得具有較大面積之反射區，因此晶片所發出 之光線可有效利用該反射區進行反射、折射等收斂動作， 吏才又射出來的光線分布均勻，並且用以封裝晶片之封裝膠 體，其厚度亦可增加，而有較好的包覆狀態，達到較佳的 保棱效果。 M346917 【實施方式】 參見第一及第二圖所示，本創作之發光二極體結構包 3有一殼體（10)、複數個導線架（11)、至少— BB /η l) > 乂 一個引線（13)以及一封裝膠體（14)，其中·· 該殼體（ίο)為一不透明體，其自上端内凹形成有一呈 圓錐狀的中空容室⑽，該容室(15)於殼體上端形成有一 開口平面(17)，容室(15)之壁面係朝向容室(15)之開口方 向外擴’亦即其内部口徑朝外逐漸增加，而形成—呈斜面 狀的反射區（16) ’該圓錐狀容室〇5)之圓錐“並在⑽ 度以下； 該導線架（11)可為銅或鐵等其他導電金屬材質所製 成，其係用於承載晶片（12)，並提供晶片（1 電源及散熱用途； “之 該晶片（12)係一單色發光體，且擁有至少正、負兩個 電極，其發光部之上端形成有一頂面（丨21); 口亥引線（13)係用以連接晶片（1 2)之正、負電極至導線 架（11)上，其可由任意導電體材質所製成； 該封裝膠體（14)係用於包覆裝設於容室（15)内之晶片 (12)及引線（13)，而發揮固定以及保護效果，同時讓光熱 向外傳遞，封裝膠體（14)之材質可使用環氧樹脂或矽膠 等。 進一步參見第二圖所示，於本創作之SMD式發光二極 體中’導線架（11)係貫穿殼體（1〇)而設於殼體（1〇)内下 端，導線架（11)於殼體（1〇)内並有至少一端面通過容室 M346917 (15)，而形成容室（15)之底面，導線架（11)外露於殼體（ι〇) 、外之部分可視需求而沿著殼體（10)朝向任一方向彎折，或 、呈水平展開，而晶片（12)係裝設位於容室（15)内之導線架 (11)上，而為導線架（11)所承載，並可視設計而裝設單一 或複數個相同或不同顏色的晶片（12)，該晶片（12)之頂面 021)至容室（15)之開口平面（17)形成有一距離h，該距離 ，Η並至少為lmm以上，前述引線（13)係用以將電源傳輸至 •晶片（12)，晶片（12)可於兩端電極皆連接有引線（13)，而 引線（13)另一端並接至導線架（n)上，或兩電極中僅一電 極連接有引線⑽至導線架⑴），而另—電極與導線架（⑴ 之間係填充有導電膠而與導線架（11)形成導通，晶片（12) 以及引線（13)並以封裝膠體（⑷予以包覆封裝，該封裝膠 體（14)於容室内（15)内可為未填滿容室（15)，或為填滿整 個容室（15)，封裝勝體（⑷並附著於導線架（⑴表面以及 反射區（16)之斜面上，而將晶片（12)固定於容室（丨叼内。 • 本創作之SMD式發光二極體其形成有反射區（16)之容 室（15\，其開口之平面（17)至晶片（12)之頂面（121)之距 ，離，至少為lmm以上，在成品依然能夠滿足薄型化需求的 •情況下，可獲得具有較大面積之反射區（16)，當晶片（12) 被驅動而發出光線時，所散發之光線可用以進行反射、折 射等收放動作之反射區（丨6)面積增加，因而使該使s腳式 發光二極體投射出來的光線呈分布均勻之狀態，並且由於 反射區（16)之面積增加，因而封裝膠體（14)之使用量所受 到的限制亦車乂小，於封裝時可以充填較厚的封裝膠體 9 M346917 (14)，而在反射區（16)上有較大的附著面積，其可改善 裝膠體（14)過薄導致對晶片（12)及引線（13)之保護失效的 問題’而提高產品的信賴性。 【圖式簡單說明】 第一圖為本創作之立體外觀圖。 第二圖為本創作之側面剖視圖。 第三圖為一現有技術之SMD式發光二極體之側面剖視 圖。 【主要元件符號說明】 (10)殼體 (11)導線架 (1 2)晶片 (121)頂面 (13)引線 (14)封裝膠體 (15)容室 (16)反射區 (17)開口平面 (20)殼體 (21)導線架 (22)封裝膠體 (2 3 )晶片 (2 31)頂面 (24)引線 (25)容室 (2 6)反射區 (2 7)開口平面M346917 VIII. New description: • [New technical field] • This work is about a light-emitting diode, especially a light-emitting diode structure with a casing with a large reflective area. [Prior Art] A light-emitting diode element that can efficiently convert electrical energy into light energy with high efficiency, low power consumption, small size, and the like. With the successful development of high-intensity light-emitting diodes in recent years, light-emitting diodes have only been used in the past for indicator lights and instrument displays, and have evolved to become backlights for liquid crystal displays, and then extended to electronic lighting and public displays, such as Automotive lights, large video walls, and even projector lighting, etc., generally believe that the light-emitting diodes are expected to replace incandescent lamps, fluorescent lamps and high-intensity discharge lamps, etc., into a fourth-generation light source. The LED chip must be packaged before use. The function of the package is to connect the external leads to the electrodes of the LED and to protect the LED chip from normal operation. Light-emitting diodes are available according to different application conditions, and many kinds of package forms, among which SMIKsurface mount device, surface--"I-light one-pole body has the advantages of small size and suitable for automatic production, and is widely used in communication and electronics. Among the products, etc. See the third figure, which is an example of a prior art SMD type light-emitting diode, which comprises a casing (20), a plurality of lead frames (21), and a clothing colloid (22). a wafer (23) and a lead (24), the housing (2〇) is recessed/into the chamber (25), and the opening of the chamber (25) is in the housing (2〇) The upper 5 M346917 end is formed with an opening plane (27), and the wall surface of the chamber (25) is outwardly inclined toward the opening to form a reflecting area (26), and the lead frame (2丨) is worn through At the bottom of the casing (20), one end is flat and enters the chamber to form a bottom surface of the valley to (25), and the wafer (23) is covered by the encapsulant (22) and fixed to the chamber (25). On the inner lead frame (21), the light emitting portion of the wafer (23) is formed with a top surface (231), and the top surface (231) is tolerant (25) The opening (27) is formed with a distance h between the wafer (23) on its two electrodes and connected to at least one lead (24), and the other end of the lead (24) is connected to the lead frame (21) The SMD type light-emitting diode uses the reflection area (26) to perform a convergence operation such as reflection and refraction of a part of the divergence angle of the wafer (23) to adjust the luminosity and chromaticity. However, the aforementioned prior art For the SMD type light-emitting diode, the distance h between the top surface (231) and the opening (27) of the chamber (25) is designed to be less than 1 min, in order to obtain a finished product having a thin overall thickness. The area of the reflective region (26) formed in the casing (20) is narrowed, so that the ineffective light emitted by the wafer φ (23) cannot be effectively utilized by the reflective region (26) to concentrate or the light cannot be effectively utilized for reflection. The region (26) is refracted and mixed, and is caused by waste of light and uneven color mixing. Further, since the wafer (23) is coated with the encapsulant (22), it is fixed to the chamber (25). Inside, therefore, if the face of the chamber (25) with the reflection zone (26) is formed The product is limited in size, and the amount of encapsulant (22) is limited. However, due to the thin thickness of the colloid, the moisture in the air is easily invaded into the wafer by the gap between the slope of the reflective region (26) and the encapsulant (22). (2 3) and the lead (2 4 ) area, which leads to defects in the finished product. [New content] 6 M346917 In view of the above-mentioned shortcomings of the prior art, the present invention provides an SMD type light-emitting diode having a large area of reflection area. The polar body is expected to solve the above-mentioned shortcomings caused by the narrow area of the reflection area, the waste of light and the uneven color mixing, and the fact that the encapsulating colloid is too thin and the finished product is defective. In order to achieve the above-mentioned creative purpose, the technical means used in the present invention is to provide a light-emitting diode structure, comprising: an installation body, the casing is formed with a concave chamber, and the chamber is formed and expanded. a slanted reflective region; a plurality of lead frames disposed in the housing, one end planar and into the chamber to form a bottom surface of the chamber; at least one wafer, the wafer is covered by the encapsulant and fixed On the lead frame of the chamber; at least one lead' has one end connected to the electrode of the wafer and the other end connected to the lead frame. An encapsulant for encapsulating the wafer in the chamber; _ in the light-emitting diode structure, a chamber having a reflective region, the distance from the plane of the opening to the light-emitting surface of the wafer, at least 1 _ or more . Compared with the SMD type light-emitting diode of the prior art, the se-type light-emitting diode of the present invention has the advantage that a reflective area having a large area can be obtained even if the finished product can still meet the demand for thinning. The light emitted by the wafer can effectively use the reflection area to perform reflection, refraction, etc., and the light emitted by the wafer is evenly distributed, and the thickness of the encapsulant for encapsulating the wafer can be increased, and a good package is provided. Covering the state to achieve better edge protection. M346917 [Embodiment] Referring to the first and second figures, the LED package 3 of the present invention has a casing (10), a plurality of lead frames (11), at least - BB / η l) > a lead (13) and an encapsulant (14), wherein the housing is an opaque body, and a conical hollow chamber (10) is formed concavely from the upper end, and the chamber (15) is An open plane (17) is formed on the upper end of the casing, and the wall surface of the chamber (15) is expanded outward toward the opening of the chamber (15), that is, the inner diameter thereof gradually increases outward, and a reflecting surface is formed in a sloped shape. (16) The cone of 'the conical chamber 〇5) is "under (10) degrees; the lead frame (11) can be made of other conductive metal such as copper or iron, which is used to carry the wafer (12) And providing a wafer (1 power supply and heat dissipation use; "the wafer (12) is a monochromatic illuminator, and has at least two positive and negative electrodes, and a top surface (丨21) is formed at an upper end of the light-emitting portion; The lead (13) is used to connect the positive and negative electrodes of the wafer (12) to the lead frame (11), which can be arbitrarily guided The potting material (14) is used for coating the wafer (12) and the lead wire (13) installed in the chamber (15) to exert a fixing and protection effect, and at the same time let the light and heat outward For the transfer, the material of the encapsulant (14) can be epoxy or silicone. For further reference to the second figure, in the SMD type LED of the present invention, the lead frame (11) penetrates the housing (1〇). And disposed at the lower end of the casing (1〇), the lead frame (11) is in the casing (1〇) and has at least one end surface passing through the chamber M346917 (15) to form a bottom surface of the chamber (15), the wire The frame (11) is exposed to the casing (ι), and the outer part is bent along the casing (10) in either direction or horizontally, and the wafer (12) is installed in the chamber. (15) on the lead frame (11), and carried by the lead frame (11), and visually designed to install a single or a plurality of wafers (12) of the same or different colors, the top surface of the wafer (12) 021) The opening plane (17) of the chamber (15) is formed with a distance h, the distance is at least 1 mm, and the lead wire (13) is used for electricity Transfer to the wafer (12), the wafer (12) can be connected to the lead (13) at both ends of the electrode, and the other end of the lead (13) is connected to the lead frame (n), or only one of the two electrodes is connected There are leads (10) to the lead frame (1)), and the other electrode and the lead frame ((1) are filled with conductive paste and conductive with the lead frame (11), the wafer (12) and the lead (13) are encapsulated ((4) The package encapsulant (14) may be an unfilled chamber (15) in the chamber (15), or may fill the entire chamber (15), enclose the body ((4) and attach to the lead frame ((1) The surface and the slope of the reflective area (16), and the wafer (12) is fixed in the chamber (in the chamber). • The SMD-type light-emitting diode of the present invention is formed with a cavity (15) of the reflective region (16), a distance from the plane (17) of the opening to the top surface (121) of the wafer (12), at least Above lmm, in the case where the finished product can still meet the requirements of thinning, a reflective area (16) having a large area can be obtained, and when the wafer (12) is driven to emit light, the emitted light can be used for reflection, The area of the reflection area (丨6) of the refraction and the like is increased, so that the light projected by the s-foot type light-emitting diode is uniformly distributed, and since the area of the reflection area (16) is increased, the encapsulant is encapsulated. (14) The usage is limited by the small size. It can be filled with a thick encapsulant 9 M346917 (14) during packaging, and has a large adhesion area in the reflective area (16). The colloid (14) is too thin to cause the problem of failure of the protection of the wafer (12) and the lead (13), and the reliability of the product is improved. [Simple description of the drawing] The first figure is a three-dimensional appearance of the creation. A side cross-sectional view of the creation. The third picture is a Side sectional view of a prior art SMD type light-emitting diode. [Description of main component symbols] (10) Housing (11) Lead frame (1 2) Wafer (121) Top surface (13) Lead (14) Package colloid (15) ) chamber (16) reflective area (17) open plane (20) housing (21) lead frame (22) encapsulant colloid (2 3 ) wafer (2 31) top surface (24) lead (25) chamber (2 6) Reflecting area (2 7) opening plane