M344004 八、新型說明： 【新型所屬之技術領域】 本創作係與發光二極體有關，特別是關於一種發光二 極體燈之光源基板組合結構。 5【先前技術】 一般發光二極體燈之光源基板的製作方式是預先將該 發光二極體燈所要連接之位置於印刷電路板上佈局線路， 經過顯影、電鍍、蝕刻、清洗等複雜的加工程序完成該電 路板，再將發光二極體燈直接安裝在電路板上，並且加以 ⑺焊接固定。上述發光二極體燈之光源基板的生產成本和生 產複雜度皆為待克服之課題。 此外，這類發光二極體燈之光源基板之散熱方式係為 透過金屬接腳將該發光二極體燈所產生的高溫傳導至該電 路板上的銅箔線路層，但該金屬接腳與該銅箔線路層的接 15合面積有限，因而散熱效果有限，會造成發光二極體燈在 電源驅動發光時所產生的熱量蓄積不散，如此一來將導致 發光二極體燈的光耗損，以及發光二極體燈之發光效率快 速下降，並且嚴重影響發光二極體燈的使用壽命。 有鑒於此，本案創作人乃經詳思細索，並積多年從事 20相關行業之研究開發與製造經驗，終而有本創作之產生。 【新型内容】 本創作之主要目的在於提供一發光二極體燈之光源基 板組合結構’係使用多數導電層分別連接該發光二極體燈 4 M344004 之正極引腳以及負極引腳’讓生產該發光二極體燈之光源 基板時’可省去使用印刷電路板所要的線路佈局二顯影二 電鍍、蝕刻、清洗等複雜的加工程序，並降低生產 ^ 生產複雜度。 ^ ^ 5 本創作之次要目的在於提供一發光二極體燈之光源基 板組合結構，係使用高熱傳導率之金屬導電層增強散熱^ 率’俾使發光二極體燈之高熱可透過該金屬導電層散熱而 被快速排出，減低高熱對發光二極體燈所造成的傷害 緣以達成上述目的，本創作提供一種發光二極^燈之 10光源基板組合結構包含，一第一導電層，該第一導電層嗖 有至少-穿置部絕緣層’其頂面係與該第—導電 面接合，該絕緣層上設有至少一導引部，該各導引部^該 各穿置部呈相互對應；-第二導電層，其頂面係與該絕ς 層底面接合；至少-發光二極體燈，各該發光二極體燈包 15含有-發光單元、-正極引腳以及負極引腳，該正極引腳 和該負極引腳係分別電性連接該發光單元之兩位置上；各 ，發光-極體燈設在該第—導電層上，各該正極引腳與該 第層電性連接，各該負極引腳通過各該穿置部及各 該導引部與該第二導電層電性連接。 20 藉此，本創作使該發光二極體燈之正極引腳與負極引 腳分別電性連接該第一導電層與該第二導電層，吾= 直接將電源與該些導電層連接通電，達成免使用電路板之 功運用具有高熱傳導率之金屬導電層增加散熱效率， 使付該發光二極體燈所產生之熱量可透過該金屬導電層之 M344004 高熱傳導率而被快速地傳導造成散熱之效果。 【實施方式】 為了更進一步地說明本創作，茲舉本創作較佳實施例 5 並配合下列圖示詳細說明之，其中： ‘ 第一圖係本創作第一較佳實施例發光二極體燈之光源 Φ 基板組合結構之立體圖。 第二圖係本創作第一較佳實施例發光二極體燈之光源 基板組合結構之第一導電層。 10 第二圖係本創作第一較佳實施例發光二極體燈之光源 基板組合結構之絕緣層。 第四圖係本創作第一較佳實施例發光二極體燈之光源 基板組合結構之第二導電層。 第五S第/、圖係本創作第一較佳實施例發光二極體 参I5燈之^源基板組合結構之發光二極體燈組合示意圖。 第3係本創作第二幸交佳實施例發光二極體燈之光源 ， 基板組合結構之第一導電層。M344004 VIII. New description: [New technical field] This creation is related to the light-emitting diode, especially the light source substrate combination structure of a light-emitting diode lamp. 5 [Prior Art] The light source substrate of a general light-emitting diode lamp is prepared by pre-arranging the position of the light-emitting diode lamp on a printed circuit board, and performing complicated processing such as development, plating, etching, and cleaning. The program completes the circuit board, and then the light-emitting diode lamp is directly mounted on the circuit board, and (7) soldered and fixed. The production cost and production complexity of the light source substrate of the above-described light-emitting diode lamp are all to be overcome. In addition, the heat dissipation method of the light source substrate of the light-emitting diode lamp is to transmit the high temperature generated by the light-emitting diode lamp to the copper foil circuit layer on the circuit board through the metal pin, but the metal pin and the metal pin The copper foil circuit layer has a limited connection area, and thus the heat dissipation effect is limited, and the heat generated by the light-emitting diode lamp when the power source is driven to emit light is not accumulated, thereby causing the light loss of the light-emitting diode lamp. And the luminous efficiency of the light-emitting diode lamp is rapidly decreased, and the service life of the light-emitting diode lamp is seriously affected. In view of this, the creators of this case have carefully studied and accumulated years of experience in research, development and manufacturing of 20 related industries, and finally created this creation. [New content] The main purpose of this creation is to provide a light source substrate assembly structure of a light-emitting diode lamp, which is connected to the positive electrode pin and the negative electrode pin of the light-emitting diode lamp 4 M344004 by using a plurality of conductive layers respectively. When the light source substrate of the light-emitting diode lamp is used, the complicated circuit processing such as the layout, the second development, the second plating, the etching, the cleaning, and the like, which are required for the printed circuit board, can be omitted, and the production complexity can be reduced. ^ ^ 5 The second objective of this creation is to provide a light source substrate combination structure of a light-emitting diode lamp, which uses a metal conductive layer with high thermal conductivity to enhance the heat dissipation rate, so that the high heat of the light-emitting diode lamp can penetrate the metal. The conductive layer is cooled and quickly discharged, and the damage caused by the high heat to the LED body lamp is reduced to achieve the above object. The present invention provides a light source diode lamp 10 light source substrate assembly structure including a first conductive layer, The first conductive layer has at least a through-hole insulating layer, the top surface of which is bonded to the first conductive surface, and the insulating layer is provided with at least one guiding portion, and the guiding portions are respectively disposed Corresponding to each other; a second conductive layer having a top surface bonded to the bottom surface of the insulating layer; at least a light emitting diode lamp, each of the light emitting diode packages 15 comprising a light emitting unit, a positive electrode lead, and a negative electrode lead a pin, the positive pin and the negative pin are respectively electrically connected to the two positions of the light emitting unit; each of the light emitting body lamps is disposed on the first conductive layer, and each of the positive pin and the first layer is electrically Sexual connection, each of the negative leads through each The insertion portion and each of the guiding portions are electrically connected to the second conductive layer. 20, the present invention electrically connects the positive and negative pins of the LED lamp to the first conductive layer and the second conductive layer respectively, and the power supply is directly connected to the conductive layers. Achieving the use of the circuit board without the use of a high thermal conductivity of the metal conductive layer to increase the heat dissipation efficiency, so that the heat generated by the light emitting diode lamp can be quickly transmitted through the high thermal conductivity of the metal conductive layer M344004 to cause heat dissipation The effect. [Embodiment] In order to further illustrate the present invention, the preferred embodiment 5 of the present invention is described in detail with reference to the following drawings, wherein: 'The first figure is the first preferred embodiment of the present invention. Light source Φ A perspective view of the combined structure of the substrate. The second figure is the first conductive layer of the light source substrate combination structure of the light-emitting diode lamp of the first preferred embodiment of the present invention. The second figure is an insulating layer of the light source substrate combination structure of the light-emitting diode lamp of the first preferred embodiment of the present invention. The fourth figure is the second conductive layer of the light source substrate combination structure of the light-emitting diode lamp of the first preferred embodiment of the present invention. The fifth S/FIG. is a schematic diagram of the combination of the light-emitting diode lamps of the light source diode of the first preferred embodiment of the light source diode. The third system is the second light source of the light-emitting diode lamp and the first conductive layer of the substrate combination structure.
合不意圖。 • r布—罕父佳實施例發光二極體燈之光源 二發光二極體燈之光源基板組合結構組 6 M344004 胃+—圖係本創作第三較佳實施例發光二極體燈之光 源、基板組合結構t第三發光二極體燈之光源基;fe組合結構 組合不意圖。 曰請參閱第一〜第六圖，其係為本創作第一較佳實施例所 5提供之一種發光二極體燈之光源基板組合結構（1)，其包 含：Not intended. • r cloth—the embodiment of the light-emitting diode lamp of the embodiment of the light-emitting diode lamp. The light source substrate combination structure group of the light-emitting diode lamp 6 M344004 The stomach of the third preferred embodiment of the light-emitting diode lamp The substrate combination structure t is the light source base of the third light emitting diode lamp; the combination of the fe combination structure is not intended. Please refer to the first to sixth figures, which are a light source substrate assembly structure (1) of a light-emitting diode lamp provided in the first preferred embodiment of the present invention, which comprises:
1010
第一導電層（20)，該第一導電層（20)設有多數穿 置部（21 )’各該穿置部包含一第一插孔（211)與一第一 通孔（212)，且各該第一插孔（211)與各該第一通孔（212) 係成一固定樣式等間距或不等間距的佈設在該第一導電層 ^20) ^ ;該第一導電層（2〇)可以是金屬基板、銅膜或 導電材料；本實施例中，該第-導電層（20)係以金屬基 板為例，該金屬基板係選自鋁(A1)、鎂(Mg)、鈦(Ti)以及其 合金所構成鱗巾之其巾—種；本實施射，該金屬基板 選以銘為例。 配合第三圖所示，一絕緣層（30)，該絕緣層（30)頂 面與該第—導電層（2G)底面接合；該絕緣層（30)設有 多數導1 丨部（31)，各該導引部（31)包含—第三插孔（3ΐι) ^第一通孔（312) ’各該導引部（31)係與各該穿置部 (21)呈上下相互對應，亦即該各第三通孔（312)盘該各 第-插孔（211)上下制且錄大_各第—插孔（211)， 而各該第三插孔（3H)與各該第—通孔（212)上下對應 且孔徑小於各該第-通孔（212);魏緣層（3())可以是 陶曼膜、樹脂纖維板或是金屬化合物；本實施例中，該絕 7 20 M344004 緣層（30)形成於，係金屬基板之第一導電層（20)之表 面，且為該金屬之化合物；本實施例中該絕緣層（3〇)係 該金屬之氧化物，其係以陽極處理形成，在此之陽極處理 的方式可為一般習用之微弧氧化陽極處理（micro arc 5 oxidation anodizing; MAO anodizing)、電漿電解氧化(piasma Electrolytic Oxidation ; PEO)，但為使本創作之氧化層 Al2〇3 熱傳導率較佳，本實施例選以創作人所研發出之電化學激 化陽極處理(electric-chemical colloid oxidation anodizing ; ECCO anodizing)方式，其特點在於利用草酸H2C204為工作 10溶液，預定工作電壓為260_400Volts，預定工作電流為 2-5A/dm2，使得該氧化鋁絕緣層(20)多孔的柱狀結晶，排列 的規則性較佳，具有較佳之傳熱效果，其熱傳導係數 (thermal conductivity)高達 100(W/m.K)以上，具有確實提高 散熱效果之特色；另外，本創作之絕緣層（30)，除了上述實 I5施例中以陽極處理形成氧化鋁外，亦可對該第一導電層 (20)表面施以氮化處理，而形成氮化鋁，或對該第一導 電層（20)表面同時施以氧化處理及氮化處理，而形成鋁 的氮氧化合物，其均有極佳之高導熱性。 配合第四圖所示，一第二導電層（40)，該第二導電層 20 ( 40)設有多數置設部（41)，且該第二導電層（40)頂面 與該絕緣層（30)底面接合，該些置設部（41)係與該導 引部（31)呈上下對應設置，該些置設部（41)並具有多 數第二插孔（411)與多數第二通孔（412)，且各該第二插 孔（411)與各該第二通孔（412)係成一固定樣式等間距 8 M344004 或不等間距的佈設在該第二導電層（40)上，其中，各該 第二通孔（412)與各該第一插孔（211)上下對應且孔= 大於各該第一插孔（211);而各該第二插孔（411)與各: 第一通孔（212)上下對應且孔徑小於該各該第通= 5 (212);該第二導電層（4〇)可以是金屬基板、銅膜或導 電材料；本實施例中，該第二導電層（4〇)係以金屬板為 例，該金屬基板係選自鋁(A1)、鎂(Mg)、鈦(Ti)以及其合金 所構成族群中之其中一種；本實施例中，該金屬基板&以 鋁為例。 10 配合第五圖和第六圖所示，至少一發光二極體燈 (50) ’各該發光二極體燈（5〇)具有一發光單元（51)以 及由該發光單元（51)之下端兩處平行且間隔地分別延伸 出之一正極引腳（52)與一負極引腳（53)，當分別給予該 正極引腳（52)與該負極引腳（53) 一外加電壓，該外Z 15電壓所衍生的電位差而使得這些電子電洞對產生再結合現 象（Recombination)使處於高能量且非穩定的激發狀態於 能量釋出（以光的形式）時則回復到能量穩定的基態而產 生發光；各該發光二極體燈（50)係設在該第一導電層（2〇) 上’ 3亥正極引腳（52)插接在該第一導電層（20)之第一 2〇插孔（211)中，與該第一導電層（20)電性導通，且由於 該各第三通孔（312)與該各第二通孔（412)孔徑大於各 該第一插孔（211)，因此可避免該正極引腳（52)與該第 二導電層（40)接觸；該負極引腳（53)係通過該第一導 電層（20)之第一通孔（212)與該導引部（31)之第三插 9 M344004 孔（311)，插接在該些置設部（41)之第二插孔（411)中， 且由於該各第一通孔（212)孔徑大於各該第三插孔（311) 及各該第二插孔（411)，因此可避免該負極引腳（53)與 該第一導電層（2〇)接觸（當然為更安全之保障，可填入絕 5緣膠）；該正極引腳（52)與該負極引腳（53)的固定方式 有焊接、鉚接或彎折；本實施例中，該固定方式係以焊接 為例。 藉由上述結構，本創作係將該第一導電層（20)接合 該絕緣層（30)，再將該第二導電層（4〇)接合在該絕緣層 1〇 (30)上，使該第一導電層（20)與該第二導電層（40) 相互電性絕緣；並將各該發光二極體燈（50)所具有之該 正極引腳（52)、該負極引腳（53)分別與該第一導電層 (20)、該第二導電層（40)電性連接，達成使該發光二極 體燈之光源基板組合結構不需使用電路板，並增加光源基 I5 板之散熱效率。 請參閱第七圖〜第十圖，其為本創作一第二實施例，係 運用與該第一實施例相似之結構，提供另一種發光二極體 燈之光源基板組合結構（1)，其包含： 一第一導電層（60)，其僅設有多數單孔狀之穿置部 20 (61)且該穿置部（61)係佈設在該第一導電層（60)上； 一絕緣層（70)，係與該第一導電層（6〇)接合；該絕緣層 (70)設有多數單孔狀之導引部（71)，係與各該穿置部（61) 呈上下對應設置，且該導引部（71)孔徑小於該穿置部 (61)，一第二導電層（80)，設有多數單孔狀之置設部（81) M344004 且與5亥絕緣層（70)接合，各該置設部（81)係 引部⑺）對應設置，且各該置設部（81)孔徑棒2 穿置部（61)。 &各5亥 二々如第十圖中所示，至少一第二發光二極體燈（9〇)，各 5该第一發光二極體（90)其下端具有一呈同軸延伸而出之 -正極引腳（91)與—負極引腳負極引腳（92)，其中該正 極引腳（91)外徑大於該負極引腳（92)(且該正極引腳（91) 與j負極引腳（92)利用一絕緣材使其相互電性絕緣，此 =習用，藝，容不贅述）；各該第二發光二極體燈（90)係 10設^該第一導電層（60)上，該正極引腳（91)與該第-導=層（60)電性連接；該負極引腳（92)係通過該第一 導電層（60)之穿置部（61)與該第二絕緣層（70)之導 引部（71)，插接在該第二導電層（8〇)之置設部（81)中。 請參閱第十一圖，其為本創作一第三較佳實施例，本 I5貫施例與該第二實施例相異處在一種發光二極體燈之結 構；至少一第三發光二極體燈（100)，各該發光二極體燈(1〇〇) 之正極引腳（101)直接形成為該發光二極體燈（1〇〇)之承 座’因此可將正極引腳(101)直接跨置在該第一導電層（60) 頂面上，而該負極引腳（1〇2)係通過該第一導電層（6〇) 2〇之穿置部（61)與該絕緣層（7〇)之導引部（71)，插接在 該第二導電層（80)之置設部（81)中。 藉由上述結構，本創作係將該第一導電層（60)上接 合該絕緣層（70)，再將該第二導電層（8〇)接合在該絕緣 層（70)上’使該第一導電層（6〇)與該第二導電層（8〇) 11 M344004 相互電性絕緣；並將各該發光二極體燈（9〇)、（ 1〇〇)所具 有之各該正極引腳（91)、（1〇1)，該負極引腳（92)、（1〇2) 分別與該第一導電層（60)、該第二導電層（8〇)電性連接， 達成使該發光二極體燈之光源基板之結構，因此不需使用 5電路板並增加光源基板之散熱效率，讓生產該發光二極體 燈之光源基板時，可省去使用印刷電路板所要的線路佈 局、顯影、電鍍、蝕刻、清洗等複雜的加工程序，並降低 生產成本和生產複雜度，同時，使發光二極體燈之高熱可 透過該金屬導電層散熱而被快速排出，更甚者，亦藉由金 10屬導電層的高導熱性化合物形成絕緣層快速排熱，減低高 熱對發光二極體燈所造成的傷害。a first conductive layer (20), the first conductive layer (20) is provided with a plurality of through portions (21)' each of the through portions including a first insertion hole (211) and a first through hole (212), And each of the first insertion holes (211) and each of the first through holes (212) are arranged in a fixed pattern at equal intervals or unequal intervals on the first conductive layer 2020; the first conductive layer (2) 〇) may be a metal substrate, a copper film or a conductive material; in this embodiment, the first conductive layer (20) is exemplified by a metal substrate selected from the group consisting of aluminum (A1), magnesium (Mg), and titanium. (Ti) and the towel of the scale formed by the alloy thereof; the present embodiment, the metal substrate is selected as an example. As shown in the third figure, an insulating layer (30), the top surface of the insulating layer (30) is bonded to the bottom surface of the first conductive layer (2G); the insulating layer (30) is provided with a plurality of lead portions (31) Each of the guiding portions (31) includes a third insertion hole (3ΐι), a first through hole (312), and each of the guiding portions (31) corresponding to each of the wearing portions (21). That is, the third through holes (312) of the respective first sockets (211) are up and down and recorded as large _ each of the first sockets (211), and each of the third sockets (3H) and each of the first - the through hole (212) corresponds vertically and has a smaller aperture than each of the first through holes (212); the Wei edge layer (3 ()) may be a Taman film, a resin fiber board or a metal compound; in this embodiment, the 20 M344004 The edge layer (30) is formed on the surface of the first conductive layer (20) of the metal substrate and is a compound of the metal; in the embodiment, the insulating layer (3〇) is an oxide of the metal, It is formed by anodizing, and the anode treatment method here may be a conventional micro arc 5 oxidation anodizing (MAO anodizing), plasma electrolytic oxidation (piasma Electrolyti). c Oxidation; PEO), but in order to make the thermal conductivity of the oxide layer Al2〇3 of the present invention better, this embodiment selects the electric-chemical colloid oxidation anodizing (ECCO anodizing) method developed by the creator. The utility model is characterized in that the oxalic acid H2C204 is used as the working 10 solution, the predetermined working voltage is 260_400 Volts, and the predetermined working current is 2-5 A/dm2, so that the alumina insulating layer (20) has a porous columnar crystal, and the arrangement regularity is better. It has better heat transfer effect, and its thermal conductivity is up to 100 (W/mK) or more, which has the characteristic of improving the heat dissipation effect. In addition, the insulating layer (30) of the present invention is in addition to the above embodiment I5. The surface of the first conductive layer (20) may be subjected to nitriding treatment to form aluminum nitride, or the surface of the first conductive layer (20) may be simultaneously subjected to oxidation treatment and nitridation. The aluminum oxynitride is formed to have excellent thermal conductivity. As shown in the fourth figure, a second conductive layer (40), the second conductive layer 20 (40) is provided with a plurality of mounting portions (41), and the top surface of the second conductive layer (40) and the insulating layer (30) The bottom surface is joined, and the mounting portions (41) are disposed corresponding to the guiding portion (31). The mounting portions (41) have a plurality of second jacks (411) and a plurality of second portions. a through hole (412), and each of the second insertion holes (411) and each of the second through holes (412) are arranged in a fixed pattern at an equal interval of 8 M344004 or unequally spaced on the second conductive layer (40) Each of the second through holes (412) corresponds to each of the first insertion holes (211) and the holes are larger than each of the first insertion holes (211); and each of the second insertion holes (411) and each of the second insertion holes (411) The first through hole (212) corresponds to the upper and lower sides and the aperture is smaller than the first pass = 5 (212); the second conductive layer (4〇) may be a metal substrate, a copper film or a conductive material; in this embodiment, the The second conductive layer (4〇) is exemplified by a metal plate selected from one of the group consisting of aluminum (A1), magnesium (Mg), titanium (Ti), and alloys thereof; , the metal substrate & Aluminum is an example. 10, in conjunction with the fifth and sixth figures, at least one of the light-emitting diode lamps (50)' each of the light-emitting diode lamps (5) has a light-emitting unit (51) and the light-emitting unit (51) A positive electrode pin (52) and a negative electrode pin (53) are respectively extended in parallel and spaced apart at the lower end, and a voltage is applied to the positive electrode pin (52) and the negative electrode pin (53) respectively. The potential difference caused by the external Z 15 voltage causes these electron hole pairs to generate recombination, so that the high energy and unsteady excitation state returns to the energy stable ground state when the energy is released (in the form of light). And generating a light emitting light; each of the light emitting diode lamps (50) is disposed on the first conductive layer (2〇), and the first positive conductive layer (52) is inserted into the first conductive layer (20) The second conductive layer (20) is electrically connected to the first conductive layer (20), and the apertures of the third through holes (312) and the second through holes (412) are larger than the first insertion holes. Hole (211), so that the positive lead (52) can be prevented from contacting the second conductive layer (40); the negative lead (53) is passed a first through hole (212) of the first conductive layer (20) and a third plug 9 M344004 hole (311) of the guiding portion (31) are inserted into the second jack of the mounting portion (41) In (411), and because each of the first through holes (212) has a larger aperture than each of the third insertion holes (311) and each of the second insertion holes (411), the negative electrode pin (53) and the The first conductive layer (2〇) contacts (of course, a more secure guarantee, can be filled with a 5 edge glue); the positive pin (52) and the negative pin (53) are fixed by welding, riveting or bending In this embodiment, the fixing method is exemplified by welding. With the above structure, the first conductive layer (20) is bonded to the insulating layer (30), and the second conductive layer (4) is bonded to the insulating layer 1 (30). The first conductive layer (20) and the second conductive layer (40) are electrically insulated from each other; and the positive electrode pin (52) and the negative electrode pin (53) of each of the light-emitting diode lamps (50) And electrically connecting the first conductive layer (20) and the second conductive layer (40) respectively, so that the light source substrate assembly structure of the light-emitting diode lamp does not need to use a circuit board, and the light source base I5 board is added. Cooling efficiency. Referring to FIG. 7 to FIG. 10 , which is a second embodiment of the present invention, a light source substrate assembly structure (1) of another LED light is provided by using a structure similar to that of the first embodiment. The method includes: a first conductive layer (60) provided with only a plurality of single-hole shaped through portions 20 (61) and the through portion (61) is disposed on the first conductive layer (60); The layer (70) is bonded to the first conductive layer (6〇); the insulating layer (70) is provided with a plurality of single-hole-shaped guiding portions (71), which are connected to the respective wearing portions (61) Correspondingly, the guiding portion (71) has a smaller aperture than the wearing portion (61), and a second conductive layer (80) is provided with a plurality of single-hole-shaped mounting portions (81) M344004 and an insulating layer with 5 (70) Engagement, each of the mounting portions (81) is provided correspondingly to the lead portion (7), and each of the mounting portions (81) has an aperture rod 2 insertion portion (61). & each 5H, as shown in the tenth figure, at least one second light-emitting diode lamp (9〇), each of the first light-emitting diodes (90) has a lower end with a coaxial extension - positive pin (91) and - negative pin negative pin (92), wherein the positive pin (91) outer diameter is larger than the negative pin (92) (and the positive pin (91) and j negative The pins (92) are electrically insulated from each other by an insulating material, which is conventional, and is not described in detail; each of the second LED lamps (90) is provided with the first conductive layer (60). The positive lead (91) is electrically connected to the first conductive layer (60); the negative lead (92) is passed through the through portion (61) of the first conductive layer (60) The guiding portion (71) of the second insulating layer (70) is inserted into the mounting portion (81) of the second conductive layer (8〇). Please refer to FIG. 11 , which is a third preferred embodiment of the present invention. The present embodiment is different from the second embodiment in the structure of a light-emitting diode lamp; at least one third light-emitting diode The body lamp (100), the positive electrode pin (101) of each of the light-emitting diode lamps (1〇〇) is directly formed as a socket of the light-emitting diode lamp (1〇〇), so the positive electrode pin can be 101) directly straddle the top surface of the first conductive layer (60), and the negative electrode lead (1〇2) passes through the first conductive layer (6〇) 2〇 through portion (61) and the A guiding portion (71) of the insulating layer (7) is inserted into the mounting portion (81) of the second conductive layer (80). With the above structure, the present invention bonds the first conductive layer (60) to the insulating layer (70), and then bonds the second conductive layer (8) to the insulating layer (70). a conductive layer (6〇) and the second conductive layer (8〇) 11 M344004 are electrically insulated from each other; and each of the anodes of the light-emitting diode lamps (9〇) and (1〇〇) The pins (91) and (1〇1) are electrically connected to the first conductive layer (60) and the second conductive layer (8〇), respectively. The structure of the light source substrate of the light-emitting diode lamp does not need to use 5 circuit boards and increases the heat dissipation efficiency of the light source substrate, so that when the light source substrate of the light-emitting diode lamp is produced, the circuit required for using the printed circuit board can be omitted. Complex processing procedures such as layout, development, plating, etching, cleaning, etc., and reduce production cost and production complexity. At the same time, the high heat of the LED light can be quickly discharged through the metal conductive layer, and even more, The high thermal conductivity compound of the gold 10 conductive layer is also used to form an insulating layer to quickly dissipate heat and reduce high heat. Damage to the light-emitting diode lamp.
12 M344004 【圖示之簡單說明】 第一圖係本創作第一較佳實施例發光二極體燈之光源 基板組合結構之立體圖。 第二圖係本創作第一較佳實施例發光二極體燈之光源 5基板組合結構之第一導電層。 ' 第二圖係本創作第一較佳實施例發光二極體燈之光源 _ 基板組合結構之絕緣層。 第四圖係本創作第一較佳實施例發光二極體燈之光源 基板組合結構之第二導電層。 10 第五圖〜第六圖係本創作第一較佳實施例發光二極體 k之，源基板組合結構之發光二極體燈組合示意圖。 第七圖係本創作第二較佳實施例發光二極體燈之光源 基板組合結構之第一導電層。 第八圖係本創作第二較佳實施例發光二極體燈之光源 15基板組合結構之絕緣層。 1 帛九圖係本創作第二較佳實施例發光二極體燈之光源 基板組合結構之第二導電層。 ，· 第十圖係本創作第二較佳實施例發光二極體燈之光源 • 基板、卫s、、Ό構之第二發光二極體燈之光源基板組合結構組 2〇 合示意圖。 、第十圖係本創作第三較佳實施例發光二極體燈之光 、原土，、、且δ、、”構之第三發光二極體燈之光源基板組合結構 組合示意圖。 13 M344004 【主要元件符號說明】 發光二極體燈之光源基板組合結構（1) 第一導電層（20) (60) 穿置部（21) (61) 5 第一插孔（211) 第一通孔（212) 絕緣層（30) (70) 導引部（31) (71) 第三插孔（311) ίο 第三通孔（312) 第二導電層（40) (80) 置設部（41) (81) 第二插孔（411) 第二通孔（412) 15 發光二極體燈（50) 發光單元（51) 第二發光二極體燈（90) 第三發光二極體燈（100) 正極引腳（52) (91) ( 101) 20 負極引腳（53) (92) ( 102)12 M344004 [Simplified Description of the Drawing] The first drawing is a perspective view of the light source substrate combination structure of the light-emitting diode lamp of the first preferred embodiment of the present invention. The second figure is the first conductive layer of the light source of the light-emitting diode lamp of the first preferred embodiment of the present invention. The second figure is the light source of the light-emitting diode lamp of the first preferred embodiment of the present invention. _ The insulating layer of the substrate combination structure. The fourth figure is the second conductive layer of the light source substrate combination structure of the light-emitting diode lamp of the first preferred embodiment of the present invention. 10th to 6th is a schematic diagram of the combination of the light-emitting diodes of the light source diode of the first preferred embodiment of the present invention. The seventh figure is the first conductive layer of the light source substrate assembly structure of the second preferred embodiment of the present invention. The eighth figure is an insulating layer of the substrate assembly structure of the light source of the second preferred embodiment of the light-emitting diode lamp. 1 九图图 The second conductive layer of the light source diode assembly of the second preferred embodiment of the present invention. The tenth figure is the light source of the light-emitting diode lamp of the second preferred embodiment of the present invention. The light source substrate combination structure group of the second light-emitting diode lamp of the substrate, the s, and the second structure is shown in FIG. The tenth figure is a schematic diagram of the combination of the light source substrate combination structure of the light-emitting diode lamp of the third preferred embodiment of the light-emitting diode lamp, the δ, and the third light-emitting diode lamp. 13 M344004 [Description of main component symbols] Light source substrate combination structure of light-emitting diode lamp (1) First conductive layer (20) (60) Piercing portion (21) (61) 5 First jack (211) First through hole (212) Insulation (30) (70) Guide (31) (71) Third jack (311) ίο Third via (312) Second conductive layer (40) (80) Setting part (41 (81) Second jack (411) Second through hole (412) 15 Light-emitting diode lamp (50) Light-emitting unit (51) Second light-emitting diode lamp (90) Third light-emitting diode lamp ( 100) Positive pin (52) (91) ( 101) 20 Negative pin (53) (92) ( 102)