TWM331766U - Miniaturized power divider (combiner) - Google Patents
Miniaturized power divider (combiner) Download PDFInfo
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- TWM331766U TWM331766U TW96216738U TW96216738U TWM331766U TW M331766 U TWM331766 U TW M331766U TW 96216738 U TW96216738 U TW 96216738U TW 96216738 U TW96216738 U TW 96216738U TW M331766 U TWM331766 U TW M331766U
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M331766 八、新型說明： 【新型所屬之技術領域】 本創作為提供一種微小化功率分配(合成）器，特別係關於具 有利用多層化技術，包括使用低溫共燒陶瓷技術來製作的微小化 功率分配(合成）器，可製作成表面黏著方式。 【先前技術】 傳統上設計功率分配(合成）器常採用Wilkinson之傳輸線式 架構，如第一圖所示，係習用的Wilkinson傳輸線式功率分配(合 成）器示意圖，包括兩段長度為四分之一波長之傳輸線及一個阻值 為2倍Zo之阻抗匹配用電阻，其中Zo為輸出/輸入端阻抗；此架 構的特點為其尺寸與應用頻段有關，應用頻段愈低（波長愈長）， 功率分配(合成）器的尺寸就愈大，雖然現今之高介電材料及多層 化技術可將傳輸線縮短，但因其特殊之阻抗（1· 414倍Zo)限制， 無法有效縮小產品體積。 此外，通訊產品朝多功能化與縮小化趨勢發展，通訊模組的 整合度愈趨複雜，一般模組產品系採用低介電材料來設計以提升 產品之可製造性與良率，因此，傳統上採用Wilkinson傳輸線式 架構設計之功率分配(合成）器，不適合整合於現今之模組設計。 因此先前技術概括具有如下之缺點： 1·習知功率分配(合成）器採用Wilkinson之傳輸線式架構， 尺寸受限於傳輸線波長及傳輸線阻抗，無法有效縮小體 5 M331766 積0 案知功率分配(合成）器制Wilki_n之傳輸線式架構， 採用馬介電材料來縮短傳輸線長度，此高介電材料不適合 現今之通訊模組設計需求。 案創作人所欲 有鐘於此’如何將上述缺失加以摒除，即為本 解決之技術困難點之所在。 • 【新型内容】 本創作之目岐為：本働紐供_雜小化轉分配(合成) 器，特別係關於採用集總元件式設計，可利用多層化技術，包括 使用低溫魏喊技術練作，並可製作絲_著方式。 本創作之另—目的是為：將傳統上需使用高介電材料來縮小 功率分配(合成）技為可制低介電㈣來設計，補體積可大 _幅縮小’其特殊之電路架構及低介電材料設計使本創作非常適合 # 應用於現今之高整合通訊模組内。 本創作的目的還在於：本新型將傳統上使用”以丨阳㈤傳輸 線(transmission line)式之功率分配(合成）器，改採用集總元件 (lumped components)式組合而成。傳統採用傳輸線式架構，因受 限於傳輸線波長及特性阻抗因素，其尺寸無法有效縮小，而採用 集總元件式設計，元件尺寸與波長無直接關係，再搭配現今之多 層化技術，其尺寸可大幅縮小，以本新型之實施例為例，尺寸從 傳統傳輸線式之3· 2x2· 5mm，大幅縮小至L 6χ〇β 8mm。 6 M3 31766 為實現這些本創作的目的’並且根據如所實施和概括描述的 那樣以及其他優點，本創作提供的技術方案是： 一種微小化功率分配(合成）器，採用集總元件式設計，如第 二圖所示，係本創作的集總式功率分配(合成）器示意圖。其在電 路架構上’功率分配(合成）器的其中一個路徑由2階的併聯電容 與串接電感組合而成，因對稱結構關係，功率分配(合成）器的另 一個路徑亦由2階的併聯電容與串接電雜合而成，另外接一個 阻值為2倍Zo之阻抗匹配用電阻，而在結構上為； 一種微小化功率分配(合成）器，係具有複數層結構，其包括： -外部電極上層，由金屬網印於第—介質層基板上，具有六個 外部上表面雜’分佈於該第―介質縣板四周，經端電極 製作程序而形成； -第一輯層，由金屬網印於第二介㈣基板上，具有三條金 屬線圈及_貫孔，其巾每條金屬圈的—端經端電極製作程 序而與外部端電極相連，而四個貫孔與第二電感層電氣相連； 一第二電感層’由金屬網印於第三介質層基板上，具有四條金 屬線圈及八個貫孔，其中每條金屬、線圈的一端經由貫孔與第 一電感層電氣相連，另-端亦藉由貫孔與第三電感層電氣相 連； 一第三電感層，由金屬網印於第四介質層基板上，具有四條金 屬線圈及八個貫孔，其巾每條金屬線__賴由貫孔與第 電感層電氣相連’另-端亦藉由貫孔與第四電感層電氣相 7 M331766 連； 一第四電感層，由金屬網印於第五介質層基板上，具有四條金 屬線圈及八個貫孔，其中每條金屬線圈的—端經由貫孔與第 三電感層電氣相連，另-端亦藉由貫孔與第五電感層電氣相 連； -第五電感層’由金屬網印於第六介質層基板上，具有四條金 屬線圈及八個貫孔，其中每條金屬線圈的—端經由貫孔盘第 四電感層電氣相連，另-端亦藉由貫孔與第六層電氣相 連； 第六電感層，由金屬網印於第七介質層基板上，具有二條金 屬線圈及六個貫孔，其中每條金屬線圈的—端經由貫孔與第 =感層電氣相連，另一端亦由貫孔與第一接地層電氣相連； 第一接地層，由金屬網印於第人介㈣基板上，具有一片金 ，及二個貫孔，該-片金屬的—端經端電極製作程序而盘外 稍電極相連，二個貫孔分別與第六電感層、第—電 氣相連； 电 ’第一電容層’由金屬卿於第九介制基板上，具有三片 屬及二個貫孔，其中中間片金屬的—端經端 鄉 與外部端電極相連，另外其他兩片金屬的貫 層、第-接地層電氣相連； 、第“電感 第二接地層，由金屬鱗於第十介制基板上，具有一 屬，該-片金屬的一端經端電極製作程序而與外部端電極相 8 M331766 連； -::電極下層，由金屬網印於第十一介質層基板下表面，息 八固外部下表面電極，分佈於該第十 ’、 四周，經端雷朽録扣广 看基板表面 喊極製作程序而形成，並與該外部電極上層相連。 氣連接 觀梳轉絲(合成）|§，進—步包括複數 …Vla、接上下相鄰電感層金屬線圈及電容層’用以達成電M331766 VIII. New Description: [New Technology Field] This work is to provide a miniaturized power distribution (synthesis) device, especially for miniaturized power distribution with multi-layer technology, including low temperature co-fired ceramic technology. (Synthesis), can be made into a surface adhesion method. [Prior Art] Traditionally, power distribution (synthesis) devices are often designed using Wilkinson's transmission line architecture. As shown in the first figure, the Wilkinson transmission line power distribution (synthesis) diagram is used, including two segments of four-quarter length. A wavelength transmission line and a resistance matching resistor with a resistance of 2 times Zo, where Zo is the output/input impedance; the characteristics of this architecture are related to the application frequency band, and the lower the application frequency band (the longer the wavelength), the power The larger the size of the distribution (synthesis) device, although today's high dielectric materials and multilayer technology can shorten the transmission line, but due to its special impedance (1·414 times Zo), it is not possible to effectively reduce the product volume. In addition, communication products are developing toward multi-functionalization and miniaturization, and the integration of communication modules is becoming more and more complex. The general module products are designed with low-dielectric materials to improve the manufacturability and yield of products. Therefore, the tradition The power distribution (synthesis) device with Wilkinson transmission line architecture design is not suitable for integration into today's module design. Therefore, the prior art summary has the following disadvantages: 1. The conventional power distribution (synthesis) device adopts Wilkinson's transmission line architecture, and the size is limited by the transmission line wavelength and the transmission line impedance, which cannot effectively reduce the body 5 M331766 product 0. The Wilki_n transmission line architecture uses horse dielectric materials to shorten the length of the transmission line. This high dielectric material is not suitable for today's communication module design requirements. The creators of the case want to have this in mind. How to remove the above-mentioned deficiencies is the technical difficulty of solving this problem. • [New Content] The purpose of this creation is: 働 働 New Supply _ Miscellaneous Transfer Distribution (Synthesis), especially for the use of lumped component design, can use multi-layer technology, including the use of low temperature Wei shouting techniques Work, and can make silk _ way. Another purpose of this creation is to: traditionally use high dielectric materials to reduce power distribution (synthesis) technology to make low dielectric (four) design, make up the volume can be large _ size reduction 'its special circuit architecture and The low dielectric material design makes this creation ideal for use in today's highly integrated communication modules. The purpose of this creation is also: the new type will be traditionally used to combine the power distribution (synthesis) of the transmission line type with the lumped components. The traditional transmission line type is adopted. The architecture is limited by the transmission line wavelength and characteristic impedance, and its size cannot be effectively reduced. Instead of using a lumped component design, the component size is not directly related to the wavelength, and with the current multi-layer technology, the size can be greatly reduced. The embodiment of the present invention is exemplified, and the size is greatly reduced from the conventional transmission line type of 3·2x2·5 mm to L 6χ〇β 8 mm. 6 M3 31766 is for the purpose of achieving these creations' and according to the implementation and general description as described As well as other advantages, the technical solution provided by this creation is: A miniaturized power distribution (synthesis) device, which adopts a lumped component design, as shown in the second figure, is a schematic diagram of the lumped power distribution (synthesis) of the present creation. One of the paths of the 'power distribution (synthesis) device in the circuit architecture is composed of a second-order parallel capacitor and a series inductor, because The structural relationship, the other path of the power distribution (synthesis) device is also formed by the hybrid of the second-order parallel capacitor and the series connection, and another resistor for impedance matching with a resistance of 2 times Zo, and is structurally; A miniaturized power distribution (synthesis) device having a plurality of layers, comprising: - an upper layer of an external electrode printed on the first dielectric substrate by a metal mesh having six external upper surfaces mis-distributed to the first medium The periphery of the county plate is formed by the terminal electrode making process; - the first layer is printed on the second (four) substrate by a metal mesh, and has three metal coils and a through hole, and the end of each metal ring of the towel The electrode fabrication process is connected to the external terminal electrode, and the four through holes are electrically connected to the second inductance layer; a second inductance layer 'printed on the third dielectric layer substrate by the metal mesh, having four metal coils and eight through holes Each of the metal and the coil is electrically connected to the first inductor layer via the through hole, and the other end is electrically connected to the third inductor layer through the through hole; a third inductor layer is printed on the fourth medium by the metal mesh On the layer substrate, There are four metal coils and eight through holes, each of which is electrically connected to the first inductive layer by the through hole. The other end is also connected to the fourth inductive layer electrical phase 7 M331766 through the through hole; The fourth inductor layer is printed on the fifth dielectric layer substrate by a metal mesh, and has four metal coils and eight through holes, wherein the end of each metal coil is electrically connected to the third inductor layer via the through hole, and the other end is also borrowed. The through hole is electrically connected to the fifth inductor layer; the fifth inductor layer is printed on the sixth dielectric layer substrate by a metal mesh, and has four metal coils and eight through holes, wherein the end of each metal coil passes through the through hole The fourth inductor layer is electrically connected, and the other end is electrically connected to the sixth layer through the through hole; the sixth inductor layer is printed on the seventh dielectric layer substrate by a metal mesh, and has two metal coils and six through holes. The end of each metal coil is electrically connected to the first sensing layer via the through hole, and the other end is electrically connected to the first ground layer by the through hole; the first ground layer is printed on the first (four) substrate by a metal mesh. Has a piece of gold, and two through holes, the piece of gold The end-end electrode preparation process is connected to the outer electrode of the disk, and the two through holes are respectively connected to the sixth inductor layer and the first-electrode; the electric 'first capacitor layer' is formed by the metal on the ninth dielectric substrate. Three genus and two through holes, wherein the middle metal is connected to the external terminal electrode, and the other two metal layers and the first ground layer are electrically connected; The metal scale has a genus on the tenth dielectric substrate, and one end of the metal is connected to the external terminal electrode 8 M331766 through the terminal electrode fabrication process; -:: the lower layer of the electrode is printed on the eleventh by the metal mesh The lower surface of the dielectric layer substrate and the outer lower surface electrode of the octagonal solid are distributed around the tenth 'fourth circumference, and are formed by the end surface of the substrate, and are connected to the upper layer of the external electrode. Gas connection, comb-to-wire (synthesis)|§, step-by-step includes multiple numbers...Vla, connecting the upper and lower adjacent inductor layer metal coils and capacitor layer' to achieve electricity
【實施方式】 2使貴審查員方便騎瞭解本創作之魏内容與優點及复 糊㈣娜_賴創作目的: 正體構和配合附圖及實施例，作進—步詳細說明如下. 首先請參_三圖麻，係補作的物㈣圖。1中本創 作-讎小化功率分配(合成）器，係為一個利用多層化技術，包[Embodiment] 2 Make it easy for your examiner to ride and understand the Wei content and advantages of this creation and reproduce it. (4) Na _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _Three maps of Ma, the complement of things (four) map. 1 中本创-雠小化Power Distribution (Synthesis), is a multi-layered technology, package
括但不限於制低溫聽喊技娜製作的微小切率分配P 成）器，整體功率分配(合成）器可製作成表面黏著方4 ° 該微小化功率分配(合成）器議，係為多介質層級本體，其 内部金屬經由引出端與外部之端電極101、繼、⑽、·、⑽、 106相連，上述端電極經-般的電鍍程序後可作為功率分配(人成） 器之輸入/輸出及接地之用，-端電極1〇5為輸入端，—端_1〇1 與-端電極103共為輸出端，一端電極1〇2與一端電極⑽及一 端電極106為躺之用，而標記1〇7可做為腳位標示之用，整體 9 M331766 功率分配(合伽⑽尺寸為長丨.㈣及寬q. 8_。 再請參閱第四圖至第六圖所示，係本創作的第—至第四八質 層基板内部結構示意圖、第五 ”質 圖楚人 f層基板内部結構示意 圖、第九至斜-介質層基板内部結構示_。射，本創作一 種微小化功率分配(合成）器刚，係具有複數層結構，其包括： -外部電極上層2G1A，由金屬網特第—介㈣基板上，且有 六個外部上表面電極202A、遞、2〇2c、2〇2d、趣、蕭， 分佈於該第-介質層基板四周，經财極製作程序而形成； -第-電感層2G1B，由金屬網印於第二介質層基板上具有三 條金屬線圈及四個貫孔204A、驗、2〇6A、2，其中每條 金屬圓的-端經端電極製作程序而與外部端電極相連，而四 個貫孔204A、205A、206A、207A與第二電感層2〇ic電氣相 連； 一第二電感層201C，由金屬網印於第三介質層基板上，具有四 條金屬線圈及八個貫孔204B、205B、206B、207B、208A、209A、 210A、211A ’其中每條金屬線圈的一端經由貫孔2〇4B、205B、 206B、207B與第一電感層201B電氣相連，另一端亦藉由貫孔 208A、209A、210A、211A與第三電感層201D電氣相連； 一第三電感層201D，由金屬網印於第四介質層基板上，具有四 條金屬線圈及八個貫孔208B、209B、210B、21 IB、212A、213A、 214A、215A，其中每條金屬線圈的一端經由貫孔208B、209B、 210B、211B與第二電感層201C電氣相連，另一端亦藉由貫孔 M331766 212A、213A、214A、215A與第四電感層201E電氣相連； 一第四電感層201E，由金屬網印於第五介質層基板上，具有四 條金屬線圈及八個貫孔212B、213B、214B、215B、216A、217A、 218A、219A，其中每條金屬線圈的一端經由貫孔212B、213B、 214B、215B與第三電感層201D電氣相連，另一端亦藉由貫孔 216A、217A、218A、219A與第五電感層201F電氣相連； 一第五電感層201F，由金屬網印於第六介質層基板上，具有四 條金屬線圈及八個貫孔216B、217B、218B、219B、220A、221A、 222A、223A，其中每條金屬線圈的一端經由貫孔216B、217B、 218B、219B與第四電感層201E電氣相連，另一端亦藉由貫孔 220A、221A、222A、223A與第六電感層201G電氣相連； 一第六電感層201G，由金屬網印於第七介質層基板上，具有二 條金屬線圈及六個貫孔220B、221B、222B、223B、224A、225A， 其中每條金屬線圈的一端經由貫孔220B、221B、222B、223B 與第五電感層201F電氣相連，另一端亦由貫孔224A、225A 與第一接地層201H電氣相連； 一第一接地層201U，由金屬網印於第八介質層基板上，具有一 片金屬及二個貫孔224B、225B，該一片金屬的一端經端電極 製作程序而與外部端電極相連，二個貫孔224B、225B分別與 第六電感層201G、第一電容層2011電氣相連； 第電各層2011，由金屬網印於第九介質層基板上，具有三 片金屬及二個貫孔224C、225C，其中中間片金屬的一端經端 11 M331766 電極製作程序而與外部端電極相連，另外其他兩片金屬的貫 孔224C、225C與第六電感層寫、第一接地層麵電氣相 連； -第二接地層2GU，由金屬網印於第十介韻基板上，具有一 片金屬ϋ金屬的_雜端電極製作轉喊外部端電 極相連； -外部電極下層2G1K，由金屬網印於第十—介質層基板下表 • 面，具有六個外部下表面電極職、_、、獅、簡Ε、 203F ’分佈於該第十一介質層基板下表面四周，經端電極製 作程序而形成，並與該外部電極上層201Α相連。 又，本創作—種微小化功率分配(合成）器100，進-步包括複 數個貫孔(via)連接上下相_感層金屬線圈及層，用以達成 電乳連接。故，本創作之結構，係由多層之介質層基板2〇ia、謝b、 201C、201D、201E、201F、201G、201H、2011、201J、201K 及金 鎌屬網印在上述介質層基板上所組成，最外部層之介質層基板 201A、201K分別為本創作的最底層及最上層，可在其表面經由端 電極製作程序而形成外部端電極，内部層之介質層基板2〇1β、 201C、201D、201E、201F、201G、201H、2011、201J 可配合金屬 網印於各層表面而成為所需之電容及電感單元。 是以’該外部端電極1〇卜1〇2、1〇3、1〇4、1〇5、1〇6係由外 部電極上層201A之上表面電極2〇2A、202B、202C、202D、202E、 202F及外部電極下層2〇1K之下表面電極2〇3A、2〇3B、2〇3C、2〇3D、 12 M331766 203E、2G3F所組成，射—上表面雜顧與—下麵電極麵 組成-端電極1G4、-上表面電極遞與—下表面電極2_組成 -端電極1G5、-上表面電極歡與—下表面電㈣况组成一端 電極106、-上表面電極202D與一下表面電㈣犯組成一端電極 103、-上表面電極202E與一下表面電極顧組成_端電極撤 及-上表面電極202F與-下表面電極_組成一端電極ι〇ι，上 述所組成之-端雜皆經由外部端雜製作程相連接在一起。 • 又，本創作不同介質層基板上的金屬可藉著不同的貫孔(via) 上下相連轉通，上述貫孔導通之侧組成，可分別由貫孔2嫩In addition, but not limited to the low-cut listening to the small cut rate distribution made by Techna, the overall power distribution (synthesis) device can be made into a surface adhesion side of 4 °. This miniaturized power distribution (synthesis) device is more The dielectric level body has an internal metal connected to the external terminal electrodes 101, (10), (10), 106 via the terminals, and the terminal electrodes can be used as input of the power distribution (man-made) after the general plating process. For the output and grounding, the terminal electrode 1〇5 is the input terminal, the terminal_1〇1 and the terminal electrode 103 are the output terminals, and the one end electrode 1〇2 and the one end electrode (10) and the one end electrode 106 are used for lying. The mark 1〇7 can be used as the pin mark, and the overall 9 M331766 power distribution (the gamma (10) size is long 丨. (4) and the width q. 8_. Please refer to the fourth figure to the sixth figure, The internal structure of the first to the forty-eighth layer substrate, the fifth structure diagram of the internal structure of the f-layer substrate, and the internal structure of the ninth to the oblique-medium layer substrate are shown. The distribution (synthesis) device has a complex layer structure including: The external electrode upper layer 2G1A is formed on the metal mesh special-dielectric (four) substrate, and has six external upper surface electrodes 202A, diverting, 2〇2c, 2〇2d, interesting, and Xiao, distributed around the first dielectric layer substrate. Formed by the financial pole making process; - the first inductive layer 2G1B, printed by the metal mesh on the second dielectric layer substrate has three metal coils and four through holes 204A, inspection, 2〇6A, 2, wherein each metal circle The end-to-end electrode fabrication process is connected to the external terminal electrode, and the four through holes 204A, 205A, 206A, 207A are electrically connected to the second inductive layer 2〇ic; a second inductive layer 201C is printed by the metal mesh The third dielectric layer substrate has four metal coils and eight through holes 204B, 205B, 206B, 207B, 208A, 209A, 210A, 211A', wherein one end of each metal coil passes through the through holes 2〇4B, 205B, 206B, 207B is electrically connected to the first inductive layer 201B, and the other end is electrically connected to the third inductive layer 201D through the through holes 208A, 209A, 210A, and 211A; and a third inductive layer 201D is printed on the fourth dielectric layer substrate by the metal mesh. Above, there are four metal coils and eight through holes 208B, 209B, 210B, 21 IB, 212A, 213A, 214A, 215A, wherein one end of each metal coil is electrically connected to the second inductor layer 201C via the through holes 208B, 209B, 210B, 211B, and the other end is also passed through the through holes M331766 212A, 213A 214A, 215A is electrically connected to the fourth inductive layer 201E; a fourth inductive layer 201E is printed on the fifth dielectric layer substrate by a metal mesh, and has four metal coils and eight through holes 212B, 213B, 214B, 215B, and 216A. 217A, 218A, 219A, wherein one end of each metal coil is electrically connected to the third inductor layer 201D via the through holes 212B, 213B, 214B, 215B, and the other end is also passed through the through holes 216A, 217A, 218A, 219A and the fifth The inductor layer 201F is electrically connected; a fifth inductor layer 201F is printed on the sixth dielectric layer substrate by a metal mesh, and has four metal coils and eight through holes 216B, 217B, 218B, 219B, 220A, 221A, 222A, 223A. One end of each metal coil is electrically connected to the fourth inductive layer 201E via the through holes 216B, 217B, 218B, and 219B, and the other end is electrically connected to the sixth inductive layer 201G through the through holes 220A, 221A, 222A, and 223A; The sixth inductive layer 201G, The metal mesh is printed on the seventh dielectric layer substrate, and has two metal coils and six through holes 220B, 221B, 222B, 223B, 224A, and 225A, wherein one end of each metal coil passes through the through holes 220B, 221B, 222B, and 223B. The fifth inductor layer 201F is electrically connected, and the other end is also electrically connected to the first ground layer 201H by the through holes 224A, 225A; a first ground layer 201U is printed on the eighth dielectric layer substrate by a metal mesh, and has a piece of metal and two The through holes 224B, 225B, one end of the piece of metal is connected to the external end electrode through a terminal electrode making process, and the two through holes 224B, 225B are electrically connected to the sixth inductive layer 201G and the first capacitor layer 2011, respectively; 2011, printed on the ninth dielectric layer substrate by a metal mesh, having three metal and two through holes 224C, 225C, wherein one end of the middle piece metal is connected to the external end electrode through the end 11 M331766 electrode making process, and the other two The through holes 224C and 225C of the sheet metal are electrically connected to the sixth inductive layer and the first ground plane; the second ground layer 2GU is printed on the tenth meson substrate by a metal mesh, and has a piece of metal base metal. The miscellaneous electrode is fabricated and the external electrode is connected; the outer electrode 2G1K is printed by the metal mesh on the tenth-medium layer substrate. The surface has six external lower surface electrodes, _, lion, simplification, 203F′ is distributed around the lower surface of the eleventh dielectric layer substrate, formed by a terminal electrode fabrication process, and connected to the external electrode upper layer 201Α. Further, the present invention is a miniaturized power distribution (synthesis) device 100. The further step includes a plurality of vias connecting the upper and lower phase-inductive layer metal coils and layers for achieving a milk connection. Therefore, the structure of the present invention is printed on the dielectric layer substrate by a plurality of dielectric layer substrates 2〇ia, Xie b, 201C, 201D, 201E, 201F, 201G, 201H, 2011, 201J, 201K and a metal enamel. The dielectric layer substrates 201A and 201K of the outermost layer are respectively the bottom layer and the uppermost layer of the creation, and the external terminal electrodes can be formed on the surface through the terminal electrode fabrication process, and the dielectric layer substrates of the inner layer 2〇1β, 201C , 201D, 201E, 201F, 201G, 201H, 2011, 201J can be combined with metal mesh printed on the surface of each layer to become the required capacitor and inductance unit. The surface electrodes 2〇2A, 202B, 202C, 202D, 202E are provided by the external electrode upper layer 201A from the external electrode 1b, 1〇2, 1〇3, 1〇4, 1〇5, 1〇6. , 202F and the outer electrode lower layer 2〇1K under the surface electrode 2〇3A, 2〇3B, 2〇3C, 2〇3D, 12 M331766 203E, 2G3F, the shot-upper surface and the bottom electrode surface composition The terminal electrode 1G4, the upper surface electrode and the lower surface electrode 2_composition-terminal electrode 1G5, the upper surface electrode and the lower surface electric (four) state constitute one end electrode 106, the upper surface electrode 202D and the lower surface electrode (four) The one end electrode 103, the upper surface electrode 202E and the lower surface electrode are formed. The end electrode is removed - the upper surface electrode 202F and the lower surface electrode are formed as one end electrode ι〇ι, and the above-mentioned end-end impurities are all via the external end. Miscellaneous production processes are connected together. • In addition, the metal on the different dielectric layer substrates can be connected up and down by different vias, and the through holes are connected to the side, which can be respectively made by the through holes 2
與貫孔204B組合導通、貫孔205A與貫孔205B組合導通、貫孔2〇6A 與貫孔206B組合導通、貫孔2〇7A與貫孔207B組合導通、貫孔2〇8A 與貫孔208B組合導通、貫孔209A與貫孔209B組合導通、貫孔21〇A 與貫孔210B組合導通、貫孔211A與貫孔211B組合導通、貫孔212ACombined with the through hole 204B, the through hole 205A and the through hole 205B are combined, the through hole 2〇6A and the through hole 206B are combined, the through hole 2〇7A and the through hole 207B are combined, the through hole 2〇8A and the through hole 208B The combined conduction, the through hole 209A and the through hole 209B are combined to be turned on, the through hole 21〇A and the through hole 210B are combined to be turned on, the through hole 211A and the through hole 211B are combined to be turned on, and the through hole 212A is connected.
• 與貫孔212B組合導通、貫孔213A與貫孔213B組合導通、貫孔2i4A• Conducted in combination with through hole 212B, combined with through hole 213A and through hole 213B, through hole 2i4A
籲 與貫孔214B組合導通、貫孔215A與貫孔215B組合導通、貫孔216AThe combination with the through hole 214B is turned on, the through hole 215A is combined with the through hole 215B, and the through hole 216A is combined.
與貫孔216B組合導通、貫孔217A與貫孔217B組合導通、貫孔218A 與貫孔218B組合導通、貫孔219A與貫孔219B組合導通、貫孔22〇A 與貫孔220B組合導通、貫孔221A與貫孔221B組合導通、貫孔222A 與貫孔222B組合導通、貫孔223A與貫孔223B組合導通、貫孔224A 與貫孔224B與貫孔224C組合導通、貫孔225A與貫孔225B與貫 孔225C組合導通等。 再，該供輸入端之端電極105與輸出之端電極1〇1、1〇3，經 13 M331766 由内部層的第一電感層201B、第二電感層201C、第三電感層201D、 第四電感層201E、第五電感層201F、第六電感層201G、第一電容 層2011上之金屬網印與下述個別組成之貫孔導通相連，分別為貫 孔204A與貫孔204B、貫孔205A與貫孔205B '貫孔206A與貫孔 206B、貫孔207A與貫孔207B、貫孔208A與貫孔208B、貫孔209A 與貫孔209B、貫孔210A與貫孔210B、貫孔211A與貫孔211B、貫 孔212A與貫孔212B、貫孔213A與貫孔213B、貫孔214A與貫孔 • 214B、貫孔215A與貫孔215B、貫孔216A與貫孔216B、貫孔217A 與貫孔217B、貫孔218A與貫孔218B、貫孔219A與貫孔219B、貫 孔220A與貫孔220B、貫孔221A與貫孔221B、貫孔222A與貫孔In combination with the through hole 216B, the through hole 217A and the through hole 217B are combined, the through hole 218A and the through hole 218B are combined, the through hole 219A and the through hole 219B are combined, and the through hole 22A and the through hole 220B are combined and turned on. The hole 221A and the through hole 221B are combined to be turned on, the through hole 222A and the through hole 222B are combined to be turned on, the through hole 223A and the through hole 223B are combined to be turned on, the through hole 224A and the through hole 224B are combined with the through hole 224C, and the through hole 225A and the through hole 225B are combined. It is combined with the through hole 225C to be turned on or the like. Further, the terminal electrode 105 and the output terminal electrode 1〇1, 1〇3 of the input terminal are passed through the first inductor layer 201B, the second inductor layer 201C, the third inductor layer 201D, and the fourth layer of the internal layer via 13 M331766. The metal screen printing on the inductor layer 201E, the fifth inductor layer 201F, the sixth inductor layer 201G, and the first capacitor layer 2011 is electrically connected to the through holes of the following individual components, respectively, the through hole 204A and the through hole 204B, and the through hole 205A. And through hole 205B 'through hole 206A and through hole 206B, through hole 207A and through hole 207B, through hole 208A and through hole 208B, through hole 209A and through hole 209B, through hole 210A and through hole 210B, through hole 211A Hole 211B, through hole 212A and through hole 212B, through hole 213A and through hole 213B, through hole 214A and through hole 214B, through hole 215A and through hole 215B, through hole 216A and through hole 216B, through hole 217A and through hole 217B, through hole 218A and through hole 218B, through hole 219A and through hole 219B, through hole 220A and through hole 220B, through hole 221A and through hole 221B, through hole 222A and through hole
222B、貫孔223A與貫孔223B、貫孔224A與貫孔224B與貫孔224C 及貫孔225A與貫孔225B與貫孔225C等。 又请參閱第七圖所示，係本創作的頻率響應圖，因結構對稱， -兩路徑的植入損耗特性重疊，因本架構上具有低通濾波特性，因 • 此有較佳之阻帶(stop band)衰減特性，此外，兩路徑的信號隔離 度也能符合系統應用。 以上所述’僅惟本創作之一較佳可行實施例說明，非因此即 拘限本創作之專利範圍，故舉凡吾人運用本創作說明書及圖式内 令所為之等效、、’口構’直接或間接運用於其它相關技術領域者，均 同理皆理應包含於本創作之精神_的範_，合予陳明。 兹為突顯本創作之特點，特再將本創作簡述如下： 1·本創作之功率細(合成）|§，_係制集總元件式設 M331766 汁’可利用多層化技術，包括使用低溫共燒陶莞技術來製 作，並可製作成表面黏著方式。 2·本創作之功率分配(合成）器，使用低介電材料來設計，不 僅體積可大幅縮小，其特殊之電路架構及低介電材料設計 使本創作非常適合應用於現今之高整合通訊模組内。 3·本創作之功率分配(合成）器解—縮小化，尺寸小適合用 於現今縮小化通訊模組内。 综上所述，本創作在突破先前之技術結構下，確實已達到所 欲增進之功效，且也非誠該項技藝者所易於思及；再者，本創 作申請前未曾公開，其所具之進步性、實雜，顯c符合新型專 利之申請要件，爰依法提出新型申請。 【圖式簡單說明】 第-圖係習_ Wilki_傳輸線式功率細(合成❻示意圖。 第二圖係本創作賴總式功率分配(合成）器示意圖。 第二圖係本創作的外觀示意圖。 第四圖係本創作的第—至第四介質層基板内部結構示意圖。 第五圖係本創作的第五至第八介質層基板内部結構示意圖。 第六圖係本創作的第九至第十—介漏基板内部結構示意圖。 第七圖係本創作的頻率響應圖。 【主要元件符號說明】 15 M3 31766 功率分配(合成）器… • ••100 端電極.................. • ••101、102、103、104、105、106 標記..................... • ••107 外部電極上層…...... • ••201A 上表面電極............ • ••202A、202B、202C、202D、202E、202F 第一電感層............ • ••201B 貫孔..................... • ••204A、205A、206A、207A 第二電感層............ • ••201C 貫孔..................... ...204B、205B、206B、207B 貫孔..................... ,···208Α、209Α、210Α、211Α 第二電感層............ ….201D 貫孔................... ....208Β、209Β、210Β、211Β 貫孔..................... …·212Α、213Α、214Α、215Α 第四電感層............ • •••201Ε 貫孔..................... …·212Β、213Β、214Β、215Β 貫孔..................... • •••216Α、217Α、218Α、219Α 第五電感層............ • •••201F 貫孔..................... • •••216Β、217Β、218Β、219Β 貫孔…….............. • •••220Α、221Α、222Α、223Α 第六電感層........... ….201G 貫孔.................... ....220Β、221Β、222Β、223Β 貫孔.................... • •••224Α、225Α M331766222B, through hole 223A and through hole 223B, through hole 224A and through hole 224B and through hole 224C and through hole 225A and through hole 225B and through hole 225C. Please also refer to the seventh figure, which is the frequency response diagram of the original creation. Due to the structural symmetry, the implant loss characteristics of the two paths overlap, because of the low-pass filtering characteristics of the architecture, because of the better stop band ( The stop band) attenuation characteristics, in addition, the signal isolation of the two paths can also be consistent with the system application. The above description is only for the description of one of the preferred embodiments of the present invention. Therefore, the patent scope of this creation is not limited. Therefore, the equivalent of the creation specification and the schema order is used. Those who apply directly or indirectly to other related technical fields are all included in the spirit of this creation, and they are combined with Chen Ming. In order to highlight the characteristics of this creation, the author will briefly describe the creation as follows: 1. The power of this creation is fine (synthesis)|§, _ system _ total component type M331766 juice' can use multi-layer technology, including the use of low temperature Co-fired pottery and plastics technology to make, and can be made into a surface adhesion. 2. The power distribution (synthesis) device of this creation is designed with low dielectric materials, which not only can be greatly reduced in size, but also its special circuit structure and low dielectric material design make this creation very suitable for today's high integration communication mode. s. 3. The power distribution (synthesis) solution of this creation is reduced and reduced in size, which is suitable for use in today's reduced communication modules. In summary, the creation of this creation has indeed achieved the desired effect under the previous technical structure, and it is also difficult for the artist to think about it; in addition, this creation has not been disclosed before the application, and it has The progress and complexity of the project are consistent with the application requirements of the new patent, and a new application is filed according to law. [Simple diagram of the diagram] The first diagram of the diagram _ Wilki_ transmission line power fine (synthesis diagram). The second diagram is a schematic diagram of the total power distribution (synthesis) of the creation. The second diagram is a schematic diagram of the appearance of the creation. The fourth figure is a schematic diagram of the internal structure of the first to fourth dielectric layer substrates of the present invention. The fifth figure is a schematic diagram of the internal structure of the fifth to eighth dielectric layer substrates of the present creation. The sixth figure is the ninth to tenth of the present creation. - Schematic diagram of the internal structure of the substrate. The seventh diagram is the frequency response diagram of the creation. [Main component symbol description] 15 M3 31766 Power distribution (synthesis) device... • ••100 terminal electrode......... ......... • ••101, 102, 103, 104, 105, 106 mark........................ • •• 107 External Upper electrode layer............ ••• 201A Upper surface electrode............ • •• 202A, 202B, 202C, 202D, 202E, 202F The first inductor layer.... ........ • •• 201B Through Hole........................ • •• 204A, 205A, 206A, 207A Second Inductance Layer. ........... • ••201C Through Hole.....................204B, 20 5B, 206B, 207B through hole........................,···208Α, 209Α, 210Α, 211Α The second inductance layer...... ..... ....201D Through Hole...............................208Β, 209Β, 210Β, 211Β Through Hole........ ...................·212Α, 213Α, 214Α, 215Α Fourth Inductive Layer............••••201Ε Through Hole..... ................ ...·212Β, 213Β, 214Β, 215Β Through Hole........................ • • ••216Α, 217Α, 218Α, 219Α Fifth Inductive Layer............ ••••201F Through Hole.................. ... • •••216Β, 217Β, 218Β, 219Β Through Hole........................ • •••220Α, 221Α, 222Α, 223Α The sixth inductor layer... ........ ....201G Through Hole..........................220Β, 221Β, 222Β, 223Β Through Hole.... ................ • •••224Α, 225Α M331766
第一接地層......... •…"201H 貫孔.................. ……224B、225B 第一電容層......... •…··2011 貫孔.................. ···.·.224C、225C 第二接地層......... .......201J 外部電極下層…… •…·.201K 下表面電極......... .......203A、203B、203C、203D、203E、203F 17The first ground plane....................."201H through hole........................224B, 225B The first capacitor layer... ...... •...··2011 Through Hole..................·····.224C, 225C Second Ground Layer... ... .......201J Lower layer of external electrode... •...·.201K Lower surface electrode.....................203A, 203B, 203C, 203D, 203E, 203F 17
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96216738U TWM331766U (en) | 2007-10-05 | 2007-10-05 | Miniaturized power divider (combiner) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96216738U TWM331766U (en) | 2007-10-05 | 2007-10-05 | Miniaturized power divider (combiner) |
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| TWM331766U true TWM331766U (en) | 2008-05-01 |
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| TW96216738U TWM331766U (en) | 2007-10-05 | 2007-10-05 | Miniaturized power divider (combiner) |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856621A (en) * | 2012-09-24 | 2013-01-02 | 中国兵器工业集团第二一四研究所苏州研发中心 | LTCC (Low Temperature Co-Fired Ceramic) broadband power divider |
| CN103762407A (en) * | 2014-01-10 | 2014-04-30 | 嘉兴佳利电子股份有限公司 | Miniaturization multi-layer ceramic bridge |
| CN105552507A (en) * | 2015-12-08 | 2016-05-04 | 深圳市麦捷微电子科技股份有限公司 | Novel-structure chip-type wideband coupler |
| CN105846032A (en) * | 2016-03-24 | 2016-08-10 | 中国计量学院 | Low-loss crossed laminated type LTCC Wilkinson power divider |
| CN109067380A (en) * | 2018-07-11 | 2018-12-21 | 深圳振华富电子有限公司 | Antivibration dynamic formula power splitter |
-
2007
- 2007-10-05 TW TW96216738U patent/TWM331766U/en not_active IP Right Cessation
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856621A (en) * | 2012-09-24 | 2013-01-02 | 中国兵器工业集团第二一四研究所苏州研发中心 | LTCC (Low Temperature Co-Fired Ceramic) broadband power divider |
| CN103762407A (en) * | 2014-01-10 | 2014-04-30 | 嘉兴佳利电子股份有限公司 | Miniaturization multi-layer ceramic bridge |
| CN103762407B (en) * | 2014-01-10 | 2015-11-25 | 嘉兴佳利电子有限公司 | A kind of Miniaturization multi-layer ceramic bridge |
| CN105552507A (en) * | 2015-12-08 | 2016-05-04 | 深圳市麦捷微电子科技股份有限公司 | Novel-structure chip-type wideband coupler |
| CN105552507B (en) * | 2015-12-08 | 2018-09-14 | 深圳市麦捷微电子科技股份有限公司 | A kind of new structure chip wideband coupler |
| CN105846032A (en) * | 2016-03-24 | 2016-08-10 | 中国计量学院 | Low-loss crossed laminated type LTCC Wilkinson power divider |
| CN105846032B (en) * | 2016-03-24 | 2018-04-27 | 中国计量学院 | A kind of low-loss crossing stack formula LTCC Wilkinson power dividers |
| CN109067380A (en) * | 2018-07-11 | 2018-12-21 | 深圳振华富电子有限公司 | Antivibration dynamic formula power splitter |
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