TWM295339U - Multilayer LED package structure - Google Patents

Multilayer LED package structure Download PDF

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Publication number
TWM295339U
TWM295339U TW094218723U TW94218723U TWM295339U TW M295339 U TWM295339 U TW M295339U TW 094218723 U TW094218723 U TW 094218723U TW 94218723 U TW94218723 U TW 94218723U TW M295339 U TWM295339 U TW M295339U
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TW
Taiwan
Prior art keywords
layer
printed circuit
wafer
hole
led package
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Application number
TW094218723U
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Chinese (zh)
Inventor
Wei-Guo Suen
Original Assignee
Turning Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Turning Prec Ind Co Ltd filed Critical Turning Prec Ind Co Ltd
Priority to TW094218723U priority Critical patent/TWM295339U/en
Publication of TWM295339U publication Critical patent/TWM295339U/en
Priority to US11/584,171 priority patent/US20070096136A1/en
Priority to JP2006008659U priority patent/JP3128379U/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A cladding layer structure of a LED (light emitting diode) package structure comprises a printed circuit layer arranged on a substrate, a cladding layer having a through hole is located on the printed circuit layer, a chip is received in the through hole and is in electrical contact with the printed circuit layer via a welding wire. Resin is located on the printed circuit layer and filled in the through hole of the cladding layer for sealing the chip. And an optical lens is placed on the cladding layer.

Description

M295339 八、新型說明: 【新型所屬之技術領域】 本創作係關於LED之領域,尤關於一種LED封裝覆 層結構。 【先前技術】 在LED的技術中,係利用晶片配合光學元件而放射 . 光線,請參閱第一圖,其顯示習知之^肋封裝結構。於 此結構中,其包含基板(1〇)、導電層(11)、晶片(12)、 在于線(13)、封裝膠體(14)以及光學透鏡(15)。 如第圖所示,於基板(10)上佈有一導電層(11), 該導電層(11)電性連接該基板(10)之兩面,於基板之— 面上設有一晶片(12),一條銲線(13)由晶片(12)上連接 φ至與其位於基板G 〇)同面之導電層(丨丨),用以使晶片 (12)電性連接至外部,一封裝膠體(14)覆於基板(IQ) 上,包覆晶片(12)與銲線(13)以及導電層(n)之一部 份,於封裝膠體(14)上蓋一預先成型之光學透鏡(15), 光¥透鏡(15)具有一凹面(151)以及—凸面(152),以凹 面(151)置放在封裝膠體(14)上。 然而,於習知之LED封裝結構中,晶片係直接以膠 M295339 劑固著於晶杯内 再以封裝膠體進行封裝 牡應用上' 其缺點在於照設面 必須另行以電路設計組合各別led 積太小且會產生暗影以及光斑。 有鑑於此,在此技術領域中亟需—騎構能夠比擬白織燈泡 或曰光燈管之發光效果,且其照射_大,不會產生㈣以及光 斑0 【新型内容】 本創作之主要目的,在於提供一種LED封裝複層結 構,具有比擬白熾燈泡或日光燈管之發光效果。 本創作之另一目的,在於提供一種LED封裝複層結 構,在基板上提供-覆層,藉以提高晶片發射之光線的 Φ 利用率。 3月麥閲弟二圖與第三圖,依據本創作上述以及其他 、/、提ί、種LED封裝複層結構,包括基座(2〇)、 :片(22)、銲線(23)、覆層⑶)、樹脂(25)以及光學透 = ’、中,基座(2 0 )是在基板(2 〇 1)上設置一且有 電極銲墊(2〇21)之印刷電路層(2〇2),一晶片(22)設置 於印刷電路層(2。2)之表面⑵),於印刷電路層( 202)之 M295339 表面(21)復設一具有穿透孔(2 41 )之覆層(2 4 ),使晶片 (22)位於該覆層(24)之穿透孔(241)中,銲線(23)之一 立而a又置於晶片(2 2)上,其另一端連接至印刷電路層(2 〇 2) 之電極銲墊(211),並以樹脂(25)填入該穿透孔(24i)以 覆蓋晶片(22)與銲線(23),並在覆層(24)之表面接置一 大於穿透孔(241)之光學透鏡(26)。 片置放於 片定位之 依據本創作之LED封裝複層結構,其將 覆層之穿透孔巾,湘穿透孔之孔徑而達成 效果。 置 之光 此外,本創作之LED封裝複層結構,其將 放於覆層之穿透孔中,彻整 邊仏B片各自 線的利用率。^口设層邊牆而提高晶片發射 M295339 【實施方式】 為使本創作之LED封裝技層結構更壤明確,以下將 配合圖式對其做詳盡之說明。 請參閱第二圖與第三圖,第二圖係顯示依據本創作 之LED封裝複層結構之覆層立體圖,第三圖係顯示依據 本創作之LED封裝複層結構之實施例的剖面圖。 於此實施例中,LED封裝複層結構包含基座(2〇)、 晶片(2 2)、銲線(2 3)、覆層(2 4)、樹脂(2 5)以及光學透 鏡(26)。 如圖所示,基座(20)是在基板(201)上設置一具有 電極銲墊(211)之印刷電路層(202),一晶片(22)設置於 φ 印刷電路層(202)之表面,於印刷電路板層(202)之表面 (21)另設一具有穿透孔(241)之覆層(24),使晶片(22) 位於覆層(24)之穿透孔(241)中,並於晶片(22)上設置 一銲線(23),而銲線(23)之另一端接置於印刷電路層 (202)之電極銲墊(211)上,並於穿透孔(241)中填入樹 月曰(2 5)以覆盖晶片(2 2)、鲜線(2 3)與^一部份之印刷電路 層(21) ◦在覆層(24)之表面接置一大於該穿透孔(241) 之光學透鏡(2 3)以放射來自晶片(2 2)之光線。 M295339 ,、‘聞第四圖與弟五圖,第四圖係顯示本創作實施 例之覆層的立體圖,而第五圖係顯示具有第四圖之實施 例的LED封裝複層結構。本實施例與第二圖和第三圖中 之’、軛例係略有不同,在此僅對其不同處做說明,相同 處不多作贅述。 凊先參閱第四圖,於本實施例之覆層(44)中,其具 有一凹槽(441),凹槽(441)具有平整之底部(4411), 於底部(4411)設置複數個穿透孔 (4421A)(4421B)(4421C)(4421D)(4421E)(4421F),複數 個穿透孔(4421 A)(4421B)(4421C)(4421 D)(4421E) (4421F)係於該凹槽(441)之底部(4411)之中央排成直 線,於該穿透孔(4421A)(4421B)(4421C)(4421D) (4421E)(4421F)之兩側各設置一長條型穿透孔 (4422A)(4422B)。 如上述之穿透孔(4422AK4422B),其係對應印刷電 路層(402)上之電極銲墊(411A)(411B)而設置,當覆層 (44)設置於印刷電路層(41)上時,電極銲鲁. (411A)(411B)可分別露出於穿透孔(4422A)(4422B)中。 M295339 明麥閱第五圖,其顯示具有第四圖之覆層的實施例 的J面圖與本實施例中與第三圖之實施例不同處在於 ”復層(44)之結構以及晶片(42)與其之設置關係。 於本實施例中,覆層(44)係設置於印刷電路層(4〇2) 上,使印刷電路層C402)上之電極銲墊(411A)(411B)分 別外露於穿透孔(4422A)(4422B)中,並於穿透孔(442ia) 中設置晶片(42),以銲線(43A)(43B)之一端連接於晶 片(42)上,其另一端分別穿過穿透孔(4422a)(4422b) 而接置於印刷電路層(4〇2)上之電極銲塾 (411A)(411B)。 如上所述之本創作實施例之結構,樹脂(45)係充滿 於覆層(44)中之凹槽 (441)以及各穿透孔 (4421A)(4422A)(4422B)中,並覆蓋晶片(42)、電極鲜 墊(4ΠΑ)(411Β)以及銲線(43A)(43B),並於覆層(44) 上設置一光學透鏡(46)。 如第五圖中之本創作實施例,其中係以穿透孔 (4421A)作為範例,實際上於各穿透孔 (4421A)(442].B)(4421C)(4421D)(4421E)(4421F)中各 設置有晶片(42),且各晶片(42)上分別具有銲線 M295339 C43A)(43B)。 其顯示依據本創作 接著’請參閱第六圖與第七圖 另κ域方;第,、圖巾,其顯示用於本創作實施例 之覆層結構,而第七圖為具有第六圖之覆層結構之實施 例的剖面圖。本實施例係與第二圖之實施例略有不同, 在此僅對其不同處做說明,相同處不多作贅述。 如第六圖所示,此結構係由覆層(64)之表面以預定 深度設置第-凹槽(641),並於第一凹槽(641)之底部 (6411)設置一較第一凹槽(641)小且具有預定深度之第 二凹槽(642),在第二凹槽(642 )之底部(6421 )中央設有 直線排列之四個穿透孔(6431A)(6431B)(6431C) (6431D),於穿透孔(643u)(6431B)(6431c)(643m)排 • 列之直線兩側各設置一長方形穿透孔(6432Α)(ΜΜ幻。 。月參閱第七圖,當以第六圖中之覆層裝置本創作實 施例時,該印刷電路層(6〇2)之表面(61)對應該兩長方 形穿透孔(6432ΑΚ6432Β)的位置上設有電極薛塾 (611Α)(611Β),俾使覆層(64)設置於印刷電路層(6〇2) 之表面(61)時,電極銲墊(611Α)(611Β)露於兩長方形穿 透孔(6432ΑΚ6432Β)中。 M295339 接著,晶片(62)係定位於穿透孔( 6431A)中,以銲 線(63A)⑹B)由晶片⑽分別電性連接至電極銲墊 (611A)⑹1B),將樹脂⑽填人1,(642)以及穿 透孔(6431A)(6431B)(6431C)(6431D)中,俾使樹脂(65) 覆蓋底部(642) '銲線(63A)(63B)、晶片(62),並於該 覆層上設置-大於第—凹槽(641)之光學透鏡⑽,而 為LED封裝複層結構。 依據上述本創作之LED封裝複層結構,其在基座上 設置-覆層並於覆層上設置穿透孔,於穿透孔中分別設 置晶片,使單一 LED結構中具有多個發光晶#,而使其 可具有比擬白熾燈泡或白光燈管的亮度,且覆層之穿透 孔可幫助定位晶片以提高 ^據上述本創作之LED封裝複層結構,若將配設晶 片之穿透孔的邊牆製作為斜面結構,則可將晶片發出之 光線反射而增強晶片之照度,更能夠達成比擬白熾燈泡 和曰光燈管的亮度。 〜綜上所a ’本創作卩具有穿透孔之覆層作為晶片之 疋位件’將晶片分別置人穿透孔中以達成定位的效果, M295339 且以個別之穿透孔區隔各晶片,而達到分隔各晶片之光 線的目的,所以本創作之實用性應已無庸置疑,此外本 創作實施例所揭露之結構,申請前並未見諸刊物,亦未 曾公開使用,是故,本創作之『新穎性』『進步性』又 均已符合,1依法提出新型專利之申請,祈求惠予審查 並早日賜準專利,實感德便。 M295339 【圖式簡單說明】 弟-圖,其顯示習知之LED之封裝結構; 第二圖,其顯示依據本創作之LED封裝複層結構之 覆層立體圖; 弗二圖,其顯不依據本創作之LED封裝複層結構之 實施例的剖面圖; 弟四圖,其顯示本創作實施例之覆層結構的立體 圖; 第五圖,其嘁示具有第四圖之覆層結構之實施例的 剖面圖 ; 第六圖,其顯示用於本創作實施例之覆層結構立體 圖;以及 弟七圖,為具有弟六圖之覆層結構之實施例的剖面 圖。 【主要元件符號說明】 10 基板 11 導電層 12 晶片 13 鲜線 14 封裝膠體 15 光學透鏡 151 凹面 152 凸面 20 基座 201 基板 202 印刷電路層 21 表面 M295339 22 晶片 23 銲線 24 覆層 241 穿透孔 25 樹脂 26 光學透鏡 40 基座 401 基板 402 印刷電路層 41 表面 411A 、411B 電極銲墊 42 晶片 43A、 43B 銲線 44 覆層 441 凹槽 4411 底部 4421A 、 4421B 、 4421C 、 4421D 、 4421E 、 4421F 穿 透孔 4422A、4422B 穿透孔 45 樹脂 46 光學透鏡 60 基座 601 基板 602 印刷電路層 61 表面 611A、 611B 電極銲墊 62 晶片 63A、 63B 銲線 64 覆層 641 第一凹槽 6411 底部 642 第二凹槽 6421 底部 6431A 、6431B 、 6432C 、 6432D 穿透孔 6432A 、6432B 穿透孔 65 樹月旨 66 光學透鏡M295339 VIII. New description: [New technical field] This creation is about the field of LED, especially about an LED package overlay structure. [Prior Art] In the technology of LEDs, radiation is radiated by using a wafer in combination with an optical element. For the light, refer to the first figure, which shows a conventional rib package structure. In this structure, it comprises a substrate (1 〇), a conductive layer (11), a wafer (12), a line (13), an encapsulant (14), and an optical lens (15). As shown in the figure, a conductive layer (11) is disposed on the substrate (10), and the conductive layer (11) is electrically connected to both sides of the substrate (10), and a wafer (12) is disposed on the surface of the substrate. A bonding wire (13) is connected from the wafer (12) to a conductive layer (丨丨) on the same side as the substrate G ,) for electrically connecting the wafer (12) to the outside, and an encapsulant (14) Covering the substrate (IQ), covering a portion of the wafer (12) and the bonding wire (13) and the conductive layer (n), and covering a pre-formed optical lens (15) on the encapsulant (14), The lens (15) has a concave surface (151) and a convex surface (152) which are placed on the encapsulant (14) with a concave surface (151). However, in the conventional LED package structure, the wafer is directly fixed in the crystal cup with the glue M295339 agent and then encapsulated in the package. The disadvantage is that the surface must be separately combined with the circuit design. Small and will produce shadows and spots. In view of this, it is urgent in this technical field that the riding structure can compare the luminous effect of the white woven bulb or the neon tube, and the irradiation _ is large, and does not generate (4) and the spot 0. [New content] The main purpose of the creation The invention provides a LED package multi-layer structure with a luminous effect compared with an incandescent bulb or a fluorescent tube. Another object of the present invention is to provide an LED package multi-layer structure that provides a cladding layer on the substrate to increase the Φ utilization of the light emitted by the wafer. In March, the two figures and the third picture of Mai Yuedi, according to the creation of the above and other, /, ί, kinds of LED package multi-layer structure, including the base (2 〇), : piece (22), welding wire (23) , cladding (3)), resin (25), and optical transmission = ', medium, pedestal (20) is a printed circuit layer provided on the substrate (2 〇 1) and having electrode pads (2〇21) 2〇2), a wafer (22) is disposed on the surface (2) of the printed circuit layer (2), and a transparent hole (2 41) is disposed on the surface (21) of the M295339 of the printed circuit layer (202). The cladding layer (22) is such that the wafer (22) is located in the through hole (241) of the cladding layer (24), and one of the bonding wires (23) is placed on the wafer (22), and the other is placed on the wafer (22). One end is connected to the electrode pad (211) of the printed circuit layer (2 〇 2), and the through hole (24i) is filled with a resin (25) to cover the wafer (22) and the bonding wire (23), and is overlaid The surface of the layer (24) is attached to an optical lens (26) that is larger than the penetration hole (241). The chip is placed on the film positioning according to the creation of the LED package multi-layer structure, which penetrates the hole towel and penetrates the aperture of the hole to achieve the effect. In addition, the LED package multi-layer structure of this creation will be placed in the through hole of the cladding to completely utilize the utilization of the respective lines of the B piece. ^Improving wafer emission by layering the edge wall M295339 [Embodiment] In order to make the LED packaging technology structure of this creation more clear, the following will explain it in detail with the drawing. Referring to the second and third figures, the second figure shows a cladding perspective view of the LED package multi-layer structure according to the present invention, and the third figure shows a cross-sectional view of an embodiment of the LED package multi-layer structure according to the present invention. In this embodiment, the LED package multi-layer structure comprises a pedestal (2 〇), a wafer (2 2), a bonding wire (23), a cladding layer (24), a resin (25), and an optical lens (26). . As shown, the susceptor (20) is provided with a printed circuit layer (202) having electrode pads (211) on the substrate (201), and a wafer (22) is disposed on the surface of the φ printed circuit layer (202). a cover layer (24) having a through hole (241) is disposed on the surface (21) of the printed circuit board layer (202) so that the wafer (22) is located in the through hole (241) of the cover layer (24). And a bonding wire (23) is disposed on the wafer (22), and the other end of the bonding wire (23) is placed on the electrode pad (211) of the printed circuit layer (202) and penetrates through the hole (241). Filled with a tree moon (2 5) to cover the wafer (2 2), the fresh line (23) and the portion of the printed circuit layer (21), and the surface of the coating (24) is placed larger than The optical lens (23) of the through hole (241) radiates light from the wafer (22). M295339, 'sume the fourth picture and the fifth figure, the fourth picture shows a perspective view of the cladding of the present embodiment, and the fifth figure shows the LED package multi-layer structure with the embodiment of the fourth figure. The present embodiment is slightly different from the 'the yoke example' in the second and third figures, and only the differences will be described herein, and the details are not described in detail. Referring to the fourth figure, in the coating (44) of the embodiment, there is a groove (441), the groove (441) has a flat bottom (4411), and a plurality of holes are formed at the bottom (4411). Through hole (4421A) (4421B) (4421C) (4421D) (4421E) (4421F), a plurality of through holes (4421 A) (4421B) (4421C) (4421 D) (4421E) (4421F) are attached to the concave The center of the bottom (4411) of the groove (441) is lined up, and a long through hole is formed on each side of the through hole (4421A) (4421B) (4421C) (4421D) (4421E) (4421F). (4422A) (4422B). a through hole (4422AK4422B) as described above, which is provided corresponding to the electrode pad (411A) (411B) on the printed circuit layer (402), when the cover layer (44) is disposed on the printed circuit layer (41), Electrode soldering. (411A) (411B) can be exposed in the penetration hole (4422A) (4422B), respectively. M295339 is a fifth diagram showing the J-side view of the embodiment having the cladding of the fourth figure and the embodiment of the third embodiment differing from the embodiment of the third embodiment in the structure of the complex layer (44) and the wafer ( 42) The relationship with the arrangement thereof. In this embodiment, the cladding layer (44) is disposed on the printed circuit layer (4〇2), and the electrode pads (411A) (411B) on the printed circuit layer C402) are exposed respectively. In the through hole (4422A) (4422B), a wafer (42) is disposed in the through hole (442ia), and one end of the bonding wire (43A) (43B) is connected to the wafer (42), and the other end thereof is respectively Electrode pad (411A) (411B) attached to the printed circuit layer (4〇2) through the through hole (4422a) (4422b). The structure of the presently-created embodiment as described above, resin (45) It is filled in the groove (441) in the cladding layer (44) and in each of the penetration holes (4421A) (4422A) (4422B), and covers the wafer (42), the electrode fresh pad (4ΠΑ) (411Β), and the bonding wire. (43A) (43B), and an optical lens (46) is disposed on the cladding layer (44). As in the fifth embodiment of the present invention, the through hole (4421A) is taken as an example, actually wear The holes (4421A) (442].B) (4421C) (4421D) (4421E) (4421F) are each provided with a wafer (42), and each of the wafers (42) has a bonding wire M295339 C43A) (43B). The display is based on the present creation, followed by 'please refer to the sixth and seventh figures, κ domain; the first, the towel, which shows the cladding structure used in the present embodiment, and the seventh figure has the sixth figure. A cross-sectional view of an embodiment of a layer structure. This embodiment is slightly different from the embodiment of the second embodiment, and only the differences are described herein, and the same portions are not described in detail. As shown in the sixth figure, the structure is shown in FIG. The first groove (641) is disposed at a predetermined depth from the surface of the coating (64), and is disposed at a bottom portion (6411) of the first groove (641) to be smaller than the first groove (641) and has a predetermined depth. The second groove (642) is provided with four through holes (6431A) (6431B) (6431C) (6431D) arranged in a line at the center of the bottom portion (6421) of the second groove (642). (643u) (6431B) (6431c) (643m) row • A rectangular through hole (6432Α) is placed on each side of the straight line of the column (ΜΜ幻。. See the seventh figure in the month, when the cladding device in the sixth figure Benchuang In the embodiment, the surface (61) of the printed circuit layer (6〇2) is provided with electrodes (611Α) (611Β) corresponding to the positions of the two rectangular through holes (6432ΑΚ6432Β), and the cladding layer (64) is provided. When disposed on the surface (61) of the printed circuit layer (6〇2), the electrode pads (611Α) (611Β) are exposed in the two rectangular through holes (6432ΑΚ6432Β). M295339 Next, the wafer (62) is positioned in the through hole (6431A), and is electrically connected to the electrode pad (611A) (6) 1B) by the bonding wire (63A) (6) B), respectively, and the resin (10) is filled with 1, (642) and the through hole (6431A) (6431B) (6431C) (6431D), the resin (65) covers the bottom (642) 'bonding wire (63A) (63B), the wafer (62), and An optical lens (10) larger than the first groove (641) is disposed on the cladding, and the LED package is laminated. According to the LED package multi-layer structure of the present invention, a through-layer is disposed on the pedestal and a through hole is disposed on the coating, and the wafer is respectively disposed in the through hole, so that the single LED structure has a plurality of illuminating crystals. Therefore, it can have a brightness comparable to an incandescent bulb or a white light tube, and the through hole of the coating can help locate the wafer to improve the multilayer structure of the LED package according to the above creation, if the through hole of the wafer is to be provided The side wall is made of a bevel structure, which can reflect the light emitted by the wafer to enhance the illumination of the wafer, and can achieve the brightness of the comparative incandescent bulb and the neon tube. ~ In summary, the 'creative 卩 has a through-hole coating as a clip of the wafer' to place the wafer into the hole to achieve the positioning effect, M295339 and separate the wafer by individual penetration holes However, the purpose of separating the light of each wafer is achieved, so the practicality of the creation should be unquestionable. Moreover, the structure disclosed in the present embodiment has not been published before the application, nor has it been used publicly. Therefore, this creation The "novelty" and "progressiveness" have all been met. 1 The application for a new type of patent is filed in accordance with the law, praying for review and early granting of patents. M295339 [Simple diagram of the diagram] The brother-picture shows the package structure of the conventional LED; the second diagram shows the overlay diagram of the multi-layer structure of the LED package according to the creation; Fu Ertu, which is not based on the creation A cross-sectional view of an embodiment of an LED package multi-layer structure; a fourth view showing a cladding structure of the present embodiment; and a fifth view showing a cross-section of an embodiment having a cladding structure of the fourth figure Fig. 6 is a perspective view showing a cladding structure used in the present embodiment; and a seventh diagram showing a cross-sectional view of an embodiment having a cladding structure of the sixth embodiment. [Main component symbol description] 10 substrate 11 conductive layer 12 wafer 13 fresh wire 14 encapsulant 15 optical lens 151 concave surface 152 convex surface 20 pedestal 201 substrate 202 printed circuit layer 21 surface M295339 22 wafer 23 bonding wire 24 cladding 241 through hole 25 Resin 26 Optical lens 40 Base 401 Substrate 402 Printed circuit layer 41 Surface 411A, 411B Electrode pad 42 Wafer 43A, 43B Solder wire 44 Cladding 441 Groove 4411 Bottom 4421A, 4421B, 4421C, 4421D, 4421E, 4421F Penetration Holes 4422A, 4422B Through Holes 45 Resin 46 Optical Lens 60 Base 601 Substrate 602 Printed Circuit Layer 61 Surface 611A, 611B Electrode Pad 62 Wafer 63A, 63B Solder Wire 64 Cladding 641 First Groove 6411 Bottom 642 Second Concave Slot 6421 bottom 6431A, 6431B, 6432C, 6432D through hole 6432A, 6432B through hole 65 tree moon 66 optical lens

Claims (1)

M295339 九、申請專利範圍: 1. 一種LED封裝複層結構,其包括: -基座,是在-基板上設置—印刷電路層而成, 於印刷電路層上設有至少一電極銲墊; —具有至少一穿透孔之覆層,設置於印刷電路層 上; e 至少一晶片,設置於基座上,與印刷電路層做電 性連接;以及 % 樹脂,位於印刷電路層上且容置於覆層之穿透孔 中’覆蓋晶片。 2.如申請專利範圍第i項之LED封裝複層結構,復包含 一位於覆層上之層。 # 3'如申請專利範圍第2項之LED封裝複層結構,其中, 層為選自透明薄膜、光學透鏡、鏡片以及光學元件所 組成之群組之一者。 4e s如申凊專利範圍第2項之led封裝複層結構,其中, 層之尺寸係大於覆層之穿透孔。 第1項之LED封裝複層、结構,復包含 〒i性連接晶片與印刷電路層,且覆於樹脂中。 M295339 6.如申請專利範圍第1項之LED封裝複層結構,其 該晶片可設置於基板之表面或印刷電路層之表面。M295339 IX. Patent application scope: 1. An LED package multi-layer structure, comprising: a base, which is formed on a substrate-printed circuit layer, and at least one electrode pad is disposed on the printed circuit layer; a coating having at least one through hole disposed on the printed circuit layer; e at least one wafer disposed on the base and electrically connected to the printed circuit layer; and a % resin disposed on the printed circuit layer and housed The through hole of the cladding covers the wafer. 2. The LED package multi-layer structure of claim i, comprising a layer on the cladding. #3' The LED package multi-layer structure of claim 2, wherein the layer is one selected from the group consisting of a transparent film, an optical lens, a lens, and an optical element. 4e s The LED package multi-layer structure of claim 2, wherein the size of the layer is larger than the penetration hole of the coating. The LED package layer and structure of the first item further comprises a 连接i-connecting chip and a printed circuit layer, and is covered in the resin. M295339 6. The LED package multi-layer structure of claim 1, wherein the wafer can be disposed on a surface of the substrate or a surface of the printed circuit layer.
TW094218723U 2005-10-28 2005-10-28 Multilayer LED package structure TWM295339U (en)

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TW094218723U TWM295339U (en) 2005-10-28 2005-10-28 Multilayer LED package structure
US11/584,171 US20070096136A1 (en) 2005-10-28 2006-10-20 Cladding layer structure of a LED package structure
JP2006008659U JP3128379U (en) 2005-10-28 2006-10-24 Flip layer structure for LED package

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101852384B (en) * 2009-03-31 2013-08-28 光宝科技股份有限公司 Method for forming lens structure of light-emitting diode and related framework thereof

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5207807B2 (en) * 2008-04-14 2013-06-12 シャープ株式会社 Chip component type LED
JP5535750B2 (en) * 2010-04-30 2014-07-02 ローム株式会社 Light emitting element module
TWI426202B (en) * 2010-12-17 2014-02-11 玉晶光電股份有限公司 Optical lighting module
JP2012186450A (en) 2011-02-16 2012-09-27 Rohm Co Ltd Led module
US8373183B2 (en) * 2011-02-22 2013-02-12 Hong Kong Applied Science and Technology Research Institute Company Limited LED package for uniform color emission
US9236521B2 (en) * 2012-10-30 2016-01-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler having lens layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100504146C (en) * 2001-08-09 2009-06-24 松下电器产业株式会社 LED illumination source and device
JP4045781B2 (en) * 2001-08-28 2008-02-13 松下電工株式会社 Light emitting device
JP3948650B2 (en) * 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド Light emitting diode and manufacturing method thereof
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101852384B (en) * 2009-03-31 2013-08-28 光宝科技股份有限公司 Method for forming lens structure of light-emitting diode and related framework thereof

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