TWI911473B - 抗蝕劑底層膜的形成方法、半導體基板的製造方法、抗蝕劑底層膜形成用組成物及抗蝕劑底層膜 - Google Patents

抗蝕劑底層膜的形成方法、半導體基板的製造方法、抗蝕劑底層膜形成用組成物及抗蝕劑底層膜

Info

Publication number
TWI911473B
TWI911473B TW111129886A TW111129886A TWI911473B TW I911473 B TWI911473 B TW I911473B TW 111129886 A TW111129886 A TW 111129886A TW 111129886 A TW111129886 A TW 111129886A TW I911473 B TWI911473 B TW I911473B
Authority
TW
Taiwan
Prior art keywords
corrosion
polymer
compound
forming
substrate
Prior art date
Application number
TW111129886A
Other languages
English (en)
Chinese (zh)
Other versions
TW202311421A (zh
Inventor
田坪大来
河津智晴
宮内裕之
林優弥
片切崇
田中亮太郎
Original Assignee
日商Ｊｓｒ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Publication of TW202311421A publication Critical patent/TW202311421A/zh
Application granted granted Critical
Publication of TWI911473B publication Critical patent/TWI911473B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C09D161/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW111129886A 2021-08-18 2022-08-09 抗蝕劑底層膜的形成方法、半導體基板的製造方法、抗蝕劑底層膜形成用組成物及抗蝕劑底層膜 TWI911473B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021133576 2021-08-18
JP2021-133576 2021-08-18

Publications (2)

Publication Number Publication Date
TW202311421A TW202311421A (zh) 2023-03-16
TWI911473B true TWI911473B (zh) 2026-01-11

Family

ID=85240616

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111129886A TWI911473B (zh) 2021-08-18 2022-08-09 抗蝕劑底層膜的形成方法、半導體基板的製造方法、抗蝕劑底層膜形成用組成物及抗蝕劑底層膜

Country Status (5)

Country Link
US (1) US20240231231A1 (https=)
JP (1) JPWO2023021971A1 (https=)
KR (1) KR20240046494A (https=)
TW (1) TWI911473B (https=)
WO (1) WO2023021971A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025010495A (ja) * 2023-07-07 2025-01-21 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
TW202505989A (zh) * 2023-07-19 2025-02-01 日商Jsr 股份有限公司 磁穿隧接面元件的製造方法
JP2025027679A (ja) * 2023-08-16 2025-02-28 信越化学工業株式会社 レジスト下層膜形成方法、パターン形成方法
WO2026042732A1 (ja) * 2024-08-23 2026-02-26 Jsr株式会社 レジスト下層膜形成用組成物、半導体基板の製造方法及び窒素含有化合物の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202032272A (zh) * 2018-11-29 2020-09-01 日商Ｊｓｒ股份有限公司 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及抗蝕劑圖案形成方法
TW202108558A (zh) * 2019-05-30 2021-03-01 日商三菱瓦斯化學股份有限公司 具有三嗪骨架之預聚物、包含其之組成物、阻劑圖型形成方法、電路圖型形成方法，及該預聚物之精製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3928278B2 (ja) 1998-11-16 2007-06-13 Ｊｓｒ株式会社 反射防止膜形成組成物
JP4288776B2 (ja) 1999-08-03 2009-07-01 Ｊｓｒ株式会社 反射防止膜形成組成物
US20220155682A1 (en) * 2019-03-19 2022-05-19 Mitsubishi Gas Chemical Company, Inc. Film forming material for lithography, composition for film formation for lithography, underlayer film for lithography, method for forming pattern, and purification method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202032272A (zh) * 2018-11-29 2020-09-01 日商Ｊｓｒ股份有限公司 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及抗蝕劑圖案形成方法
TW202108558A (zh) * 2019-05-30 2021-03-01 日商三菱瓦斯化學股份有限公司 具有三嗪骨架之預聚物、包含其之組成物、阻劑圖型形成方法、電路圖型形成方法，及該預聚物之精製方法

Also Published As

Publication number Publication date
US20240231231A1 (en) 2024-07-11
KR20240046494A (ko) 2024-04-09
TW202311421A (zh) 2023-03-16
WO2023021971A1 (ja) 2023-02-23
JPWO2023021971A1 (https=) 2023-02-23

Similar Documents

Publication Publication Date Title
TWI911473B (zh) 抗蝕劑底層膜的形成方法、半導體基板的製造方法、抗蝕劑底層膜形成用組成物及抗蝕劑底層膜
CN102803324B (zh) 咔唑酚醛清漆树脂
JP6641879B2 (ja) レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法
TW201324057A (zh) 多層抗蝕製程用抗蝕底層膜形成用組成物、抗蝕底層膜及其形成方法，以及圖型形成方法
JP7439823B2 (ja) レジスト下層膜形成用組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニングされた基板の製造方法
KR20160126900A (ko) 레지스트 하층막 형성 방법 및 패턴 형성 방법
TWI652548B (zh) Resist underlayer film forming polymer, method for producing the same, and resistance Etchant underlayer film forming composition, resist underlayer film, and method of manufacturing patterned substrate
TW201727376A (zh) 聚合物、有機層組成物及圖案形成方法
CN111542558B (zh) 聚合物、有机层组成物及形成图案的方法
CN105646850A (zh) 聚合物、有机层组合物、有机层以及形成图案的方法
CN106575082A (zh) 抗蚀剂上层膜形成用组合物和使用它的半导体装置的制造方法
TWI885096B (zh) 組成物、抗蝕劑底層膜的形成方法及抗蝕劑圖案形成方法
TWI800672B (zh) 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法、圖案形成方法以及化合物及其製造方法
TWI380129B (en) High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method
TW202340217A (zh) 半導體基板的製造方法及抗蝕劑底層膜形成用組成物
TWI815981B (zh) 多層抗蝕劑製程用底層膜形成組成物及圖案形成方法
TWI914509B (zh) 半導體基板的製造方法及組成物
TW202608861A (zh) 抗蝕劑底層膜形成用組成物、半導體基板的製造方法及含氮化合物的製造方法
TW202544103A (zh) 半導體基板的製造方法及抗蝕劑底層膜形成用組成物
TW202540070A (zh) 半導體基板的製造方法、抗蝕劑底層膜形成用組成物及含氮化合物的製造方法
TW202406886A (zh) 半導體基板的製造方法、組成物及化合物
TW202600518A (zh) 半導體基板的製造方法、抗蝕劑底層膜形成用組成物及含氮化合物的製造方法
TW202607001A (zh) 半導體基板的製造方法、抗蝕劑底層膜形成用組成物及含氮化合物的製造方法
WO2026034307A1 (ja) 半導体基板の製造方法、レジスト下層膜形成用組成物及び窒素含有化合物の製造方法
TWI687772B (zh) 膜形成用組成物、膜、形成有圖型之基板的製造方法及化合物