TWI904406B - 含碘的金屬化合物、包含其的用於沉積薄膜的組合物及其製造方法 - Google Patents

含碘的金屬化合物、包含其的用於沉積薄膜的組合物及其製造方法

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Publication number
TWI904406B
TWI904406B TW112104178A TW112104178A TWI904406B TW I904406 B TWI904406 B TW I904406B TW 112104178 A TW112104178 A TW 112104178A TW 112104178 A TW112104178 A TW 112104178A TW I904406 B TWI904406 B TW I904406B
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TW
Taiwan
Prior art keywords
alkyl
iodine
thin film
metal
metal compound
Prior art date
Application number
TW112104178A
Other languages
English (en)
Chinese (zh)
Other versions
TW202332680A (zh
Inventor
權容熙
任永宰
全相勇
卞泰錫
李相贊
李相益
Original Assignee
南韓商Ｄｎｆ有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020230009308A external-priority patent/KR102822581B1/ko
Application filed by 南韓商Ｄｎｆ有限公司 filed Critical 南韓商Ｄｎｆ有限公司
Publication of TW202332680A publication Critical patent/TW202332680A/zh
Application granted granted Critical
Publication of TWI904406B publication Critical patent/TWI904406B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/004—Oxides; Hydroxides; Oxyacids
    • C01G30/005—Oxides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C07F9/902—Compounds without antimony-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemically Coating (AREA)
TW112104178A 2022-02-08 2023-02-07 含碘的金屬化合物、包含其的用於沉積薄膜的組合物及其製造方法 TWI904406B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2022-0016153 2022-02-08
KR20220016153 2022-02-08
KR1020230009308A KR102822581B1 (ko) 2022-02-08 2023-01-25 요오드 함유 금속 화합물 및 이를 포함하는 박막 증착용 조성물
KR10-2023-0009308 2023-01-25

Publications (2)

Publication Number Publication Date
TW202332680A TW202332680A (zh) 2023-08-16
TWI904406B true TWI904406B (zh) 2025-11-11

Family

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Family Applications (1)

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TW112104178A TWI904406B (zh) 2022-02-08 2023-02-07 含碘的金屬化合物、包含其的用於沉積薄膜的組合物及其製造方法

Country Status (4)

Country Link
US (1) US12384805B2 (https=)
JP (2) JP7645296B2 (https=)
CN (1) CN116574125B (https=)
TW (1) TWI904406B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121362212B (zh) * 2025-12-19 2026-04-10 苏州源展材料科技有限公司 一种异丙基三(二甲氨基)锡的制备方法

Citations (5)

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EP2062995A1 (en) * 2007-10-31 2009-05-27 Advanced Technology Materials, Inc. Amorphous Ge/Te deposition process
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US9537095B2 (en) * 2008-02-24 2017-01-03 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US9701695B1 (en) * 2015-12-30 2017-07-11 American Air Liquide, Inc. Synthesis methods for amino(halo)silanes
KR20220000366A (ko) * 2020-06-25 2022-01-03 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 레지스트 재료 및 패턴 형성 방법

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EP1471063A1 (en) * 2003-02-28 2004-10-27 Exonhit Therapeutics S.A. Compounds and methods of treating cell proliferative diseases, retinopathies and arthritis
KR101726620B1 (ko) * 2008-06-24 2017-04-14 엘지디스플레이 주식회사 발광 표시 패널 및 그의 제조 방법
EP2139041B1 (en) * 2008-06-24 2015-08-19 LG Display Co., Ltd. Luminescence display panel and method for fabricating the same
WO2013056015A1 (en) * 2011-10-14 2013-04-18 Incyte Corporation Isoindolinone and pyrrolopyridinone derivatives as akt inhibitors
JPWO2017014170A1 (ja) * 2015-07-17 2018-04-26 武田薬品工業株式会社 複素環化合物
US9777373B2 (en) * 2015-12-30 2017-10-03 American Air Liquide, Inc. Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same
KR20180063754A (ko) * 2016-12-02 2018-06-12 삼성전자주식회사 주석 화합물, 그의 합성 방법, ald용 주석 전구체 화합물 및 함주석 물질막의 형성 방법
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EP2062995A1 (en) * 2007-10-31 2009-05-27 Advanced Technology Materials, Inc. Amorphous Ge/Te deposition process
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US9537095B2 (en) * 2008-02-24 2017-01-03 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US9701695B1 (en) * 2015-12-30 2017-07-11 American Air Liquide, Inc. Synthesis methods for amino(halo)silanes
KR20220000366A (ko) * 2020-06-25 2022-01-03 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 레지스트 재료 및 패턴 형성 방법

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Title
期刊 C. C. Hsu, and R. A. Geanangel "Synthesis and studies of trimethylamine adducts with tin(II) halides" Inorganic Chemistry 16, 10 ACS Publications, 1 October 1977 2529-2534.
網路文獻 Chemical Abstract Compound Chemical Abstract Compound STN 1984/12/17 RN 92706-14-4;期刊 D. Hass "Wismut(III)-alkyl(bzw. aryl)imidojodide" Zeitschrift für Chemie Volume 4, Issue 5 Wiley May 1964 185-186.;期刊 S. P. Sinha "Über einen Komplex des Antimon (III) -chlorids mit α,α′-Dipyridyl" Zeitschrift für Chemie Volume 4, Issue 4 Wiley April 1964 150-151.;期刊 Alwyn G. Davies and John D. Kennedy "Organometallic reactions. Part XVII. Some exchange and addition reactions of aminodimethyltin compounds" Journal of the Chemical Society C: Organic issue 6 Royal Society of Chemistry 1970 759-765.;期刊 C. C. Hsu, and R. A. Geanangel "Synthesis and studies of trimethylamine adducts with tin(II) halides" Inorganic Chemistry 16, 10 ACS Publications, 1 October 1977 2529-2534. *

Also Published As

Publication number Publication date
JP7645296B2 (ja) 2025-03-13
CN116574125B (zh) 2025-07-25
JP2025003673A (ja) 2025-01-09
US12384805B2 (en) 2025-08-12
JP2023115908A (ja) 2023-08-21
US20230250114A1 (en) 2023-08-10
CN116574125A (zh) 2023-08-11
TW202332680A (zh) 2023-08-16

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