JP7645296B2 - ヨウ素含有金属化合物およびこれを含む薄膜蒸着用組成物 - Google Patents

ヨウ素含有金属化合物およびこれを含む薄膜蒸着用組成物 Download PDF

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JP7645296B2
JP7645296B2 JP2023016388A JP2023016388A JP7645296B2 JP 7645296 B2 JP7645296 B2 JP 7645296B2 JP 2023016388 A JP2023016388 A JP 2023016388A JP 2023016388 A JP2023016388 A JP 2023016388A JP 7645296 B2 JP7645296 B2 JP 7645296B2
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alkyl
thin film
metal
independently
composition
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JP2023115908A (ja
Inventor
ヨン ヒ クォン
ユン ジェ イム
サン ヨン ジョン
テ ソク ビュン
サン チャン イ
サン イク イ
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DNF Co Ltd
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DNF Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/004—Oxides; Hydroxides; Oxyacids
    • C01G30/005—Oxides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C07F9/902—Compounds without antimony-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemically Coating (AREA)
JP2023016388A 2022-02-08 2023-02-06 ヨウ素含有金属化合物およびこれを含む薄膜蒸着用組成物 Active JP7645296B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024189001A JP2025003673A (ja) 2022-02-08 2024-10-28 ヨウ素含有金属化合物およびこれを含む薄膜蒸着用組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2022-0016153 2022-02-08
KR20220016153 2022-02-08
KR1020230009308A KR102822581B1 (ko) 2022-02-08 2023-01-25 요오드 함유 금속 화합물 및 이를 포함하는 박막 증착용 조성물
KR10-2023-0009308 2023-01-25

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JP7645296B2 true JP7645296B2 (ja) 2025-03-13

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JP2024189001A Pending JP2025003673A (ja) 2022-02-08 2024-10-28 ヨウ素含有金属化合物およびこれを含む薄膜蒸着用組成物

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US (1) US12384805B2 (https=)
JP (2) JP7645296B2 (https=)
CN (1) CN116574125B (https=)
TW (1) TWI904406B (https=)

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CN121362212B (zh) * 2025-12-19 2026-04-10 苏州源展材料科技有限公司 一种异丙基三(二甲氨基)锡的制备方法

Citations (2)

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US20090162973A1 (en) 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US20140329357A1 (en) 2008-02-24 2014-11-06 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials

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EP1471063A1 (en) * 2003-02-28 2004-10-27 Exonhit Therapeutics S.A. Compounds and methods of treating cell proliferative diseases, retinopathies and arthritis
SG178736A1 (en) * 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
KR101726620B1 (ko) * 2008-06-24 2017-04-14 엘지디스플레이 주식회사 발광 표시 패널 및 그의 제조 방법
EP2139041B1 (en) * 2008-06-24 2015-08-19 LG Display Co., Ltd. Luminescence display panel and method for fabricating the same
WO2013056015A1 (en) * 2011-10-14 2013-04-18 Incyte Corporation Isoindolinone and pyrrolopyridinone derivatives as akt inhibitors
JPWO2017014170A1 (ja) * 2015-07-17 2018-04-26 武田薬品工業株式会社 複素環化合物
US9777373B2 (en) * 2015-12-30 2017-10-03 American Air Liquide, Inc. Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same
US9701695B1 (en) * 2015-12-30 2017-07-11 American Air Liquide, Inc. Synthesis methods for amino(halo)silanes
KR20180063754A (ko) * 2016-12-02 2018-06-12 삼성전자주식회사 주석 화합물, 그의 합성 방법, ald용 주석 전구체 화합물 및 함주석 물질막의 형성 방법
AR110412A1 (es) * 2016-12-22 2019-03-27 Orion Corp Inhibidores de la cyp11a1
JP7494805B2 (ja) * 2020-06-25 2024-06-04 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090162973A1 (en) 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US20140329357A1 (en) 2008-02-24 2014-11-06 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. C. HSU et al，Synthesis and Studies of Trimethylamine Adducts with Tin(II) Halides，Inorganic Chemistry，米国，ACS Publications，1977年10月01日，Vol. 16, 10，P.2529 - p.2534

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CN116574125B (zh) 2025-07-25
JP2025003673A (ja) 2025-01-09
US12384805B2 (en) 2025-08-12
JP2023115908A (ja) 2023-08-21
TWI904406B (zh) 2025-11-11
US20230250114A1 (en) 2023-08-10
CN116574125A (zh) 2023-08-11
TW202332680A (zh) 2023-08-16

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