TWI896695B - 合成單晶鑽石及其製造方法 - Google Patents

合成單晶鑽石及其製造方法

Info

Publication number
TWI896695B
TWI896695B TW110123764A TW110123764A TWI896695B TW I896695 B TWI896695 B TW I896695B TW 110123764 A TW110123764 A TW 110123764A TW 110123764 A TW110123764 A TW 110123764A TW I896695 B TWI896695 B TW I896695B
Authority
TW
Taiwan
Prior art keywords
single crystal
diamond
crystal diamond
synthetic
synthetic single
Prior art date
Application number
TW110123764A
Other languages
English (en)
Chinese (zh)
Other versions
TW202212651A (zh
Inventor
角谷均
李真和
寺本三記
Original Assignee
日商住友電氣工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商住友電氣工業股份有限公司 filed Critical 日商住友電氣工業股份有限公司
Publication of TW202212651A publication Critical patent/TW202212651A/zh
Application granted granted Critical
Publication of TWI896695B publication Critical patent/TWI896695B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • C01B32/26Preparation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
TW110123764A 2020-06-30 2021-06-29 合成單晶鑽石及其製造方法 TWI896695B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-113053 2020-06-30
JP2020113053 2020-06-30

Publications (2)

Publication Number Publication Date
TW202212651A TW202212651A (zh) 2022-04-01
TWI896695B true TWI896695B (zh) 2025-09-11

Family

ID=79315250

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110123764A TWI896695B (zh) 2020-06-30 2021-06-29 合成單晶鑽石及其製造方法

Country Status (6)

Country Link
US (1) US20230219818A1 (https=)
EP (1) EP4174222A4 (https=)
JP (1) JP7658373B2 (https=)
CN (1) CN115698393B (https=)
TW (1) TWI896695B (https=)
WO (1) WO2022004150A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4529575B1 (en) 2022-05-23 2026-04-01 AdamanT Quanta AB Method and system for processing a diamond
JP7760754B1 (ja) * 2024-02-16 2025-10-27 住友電気工業株式会社 単結晶ダイヤモンド素材および工具
WO2025173239A1 (ja) * 2024-02-16 2025-08-21 住友電気工業株式会社 単結晶ダイヤモンドおよびそれを備える工具
JP7764631B1 (ja) * 2024-02-16 2025-11-05 住友電気工業株式会社 単結晶ダイヤモンドおよび工具

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111247276A (zh) * 2017-10-20 2020-06-05 住友电气工业株式会社 合成单晶金刚石

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218980A (ja) * 1988-07-07 1990-01-23 Sumitomo Electric Ind Ltd ダイヤモンドレーザ素子の作製方法
GB201608669D0 (en) * 2016-05-17 2016-06-29 Element Six Uk Ltd Diamond tool piece
WO2019077888A1 (ja) 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法
JP7221058B2 (ja) 2019-01-11 2023-02-13 株式会社ジャパンディスプレイ 表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111247276A (zh) * 2017-10-20 2020-06-05 住友电气工业株式会社 合成单晶金刚石

Also Published As

Publication number Publication date
CN115698393B (zh) 2026-01-23
JP7658373B2 (ja) 2025-04-08
EP4174222A1 (en) 2023-05-03
CN115698393A (zh) 2023-02-03
EP4174222A4 (en) 2023-12-20
JPWO2022004150A1 (https=) 2022-01-06
TW202212651A (zh) 2022-04-01
US20230219818A1 (en) 2023-07-13
WO2022004150A1 (ja) 2022-01-06

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