JP7658373B2 - 合成単結晶ダイヤモンド及びその製造方法 - Google Patents

合成単結晶ダイヤモンド及びその製造方法 Download PDF

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Publication number
JP7658373B2
JP7658373B2 JP2022533717A JP2022533717A JP7658373B2 JP 7658373 B2 JP7658373 B2 JP 7658373B2 JP 2022533717 A JP2022533717 A JP 2022533717A JP 2022533717 A JP2022533717 A JP 2022533717A JP 7658373 B2 JP7658373 B2 JP 7658373B2
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Prior art keywords
single crystal
diamond
crystal diamond
synthetic single
synthetic
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Japanese (ja)
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JPWO2022004150A5 (https=
JPWO2022004150A1 (https=
Inventor
均 角谷
真和 李
三記 寺本
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2022533717A 2020-06-30 2021-05-14 合成単結晶ダイヤモンド及びその製造方法 Active JP7658373B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020113053 2020-06-30
JP2020113053 2020-06-30
PCT/JP2021/018372 WO2022004150A1 (ja) 2020-06-30 2021-05-14 合成単結晶ダイヤモンド及びその製造方法

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JPWO2022004150A1 JPWO2022004150A1 (https=) 2022-01-06
JPWO2022004150A5 JPWO2022004150A5 (https=) 2023-03-14
JP7658373B2 true JP7658373B2 (ja) 2025-04-08

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JP2022533717A Active JP7658373B2 (ja) 2020-06-30 2021-05-14 合成単結晶ダイヤモンド及びその製造方法

Country Status (6)

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US (1) US20230219818A1 (https=)
EP (1) EP4174222A4 (https=)
JP (1) JP7658373B2 (https=)
CN (1) CN115698393B (https=)
TW (1) TWI896695B (https=)
WO (1) WO2022004150A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4529575B1 (en) 2022-05-23 2026-04-01 AdamanT Quanta AB Method and system for processing a diamond
JP7760754B1 (ja) * 2024-02-16 2025-10-27 住友電気工業株式会社 単結晶ダイヤモンド素材および工具
WO2025173239A1 (ja) * 2024-02-16 2025-08-21 住友電気工業株式会社 単結晶ダイヤモンドおよびそれを備える工具
JP7764631B1 (ja) * 2024-02-16 2025-11-05 住友電気工業株式会社 単結晶ダイヤモンドおよび工具

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0218980A (ja) * 1988-07-07 1990-01-23 Sumitomo Electric Ind Ltd ダイヤモンドレーザ素子の作製方法
GB201608669D0 (en) * 2016-05-17 2016-06-29 Element Six Uk Ltd Diamond tool piece
WO2019077888A1 (ja) 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法
EP3699330A4 (en) * 2017-10-20 2021-06-30 Sumitomo Electric Industries, Ltd. SYNTHETIC SINGLE CRYSTAL DIAMOND
JP7221058B2 (ja) 2019-01-11 2023-02-13 株式会社ジャパンディスプレイ 表示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A T COLLINS，Vacancy enhanced aggregation of nitrogen in diamond，Journal of Physics C:Solid State Physics，英国，The Institute of Pysics，1980年05月20日，Volume13,Number14，2641-2650

Also Published As

Publication number Publication date
CN115698393B (zh) 2026-01-23
EP4174222A1 (en) 2023-05-03
CN115698393A (zh) 2023-02-03
EP4174222A4 (en) 2023-12-20
JPWO2022004150A1 (https=) 2022-01-06
TW202212651A (zh) 2022-04-01
US20230219818A1 (en) 2023-07-13
WO2022004150A1 (ja) 2022-01-06
TWI896695B (zh) 2025-09-11

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