TWI888738B - 經組態以偵測來自樣品之帶電粒子之系統 - Google Patents

經組態以偵測來自樣品之帶電粒子之系統 Download PDF

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Publication number
TWI888738B
TWI888738B TW111124423A TW111124423A TWI888738B TW I888738 B TWI888738 B TW I888738B TW 111124423 A TW111124423 A TW 111124423A TW 111124423 A TW111124423 A TW 111124423A TW I888738 B TWI888738 B TW I888738B
Authority
TW
Taiwan
Prior art keywords
energy
charged particles
detector
sample
repulsive
Prior art date
Application number
TW111124423A
Other languages
English (en)
Chinese (zh)
Other versions
TW202336797A (zh
Inventor
蔣友飛
麥可 施泰格沃爾德
Original Assignee
美商科磊股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商科磊股份有限公司 filed Critical 美商科磊股份有限公司
Publication of TW202336797A publication Critical patent/TW202336797A/zh
Application granted granted Critical
Publication of TWI888738B publication Critical patent/TWI888738B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/053—Arrangements for energy or mass analysis electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)
TW111124423A 2021-10-05 2022-06-30 經組態以偵測來自樣品之帶電粒子之系統 TWI888738B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/494,784 US11749495B2 (en) 2021-10-05 2021-10-05 Bandpass charged particle energy filtering detector for charged particle tools
US17/494,784 2021-10-05

Publications (2)

Publication Number Publication Date
TW202336797A TW202336797A (zh) 2023-09-16
TWI888738B true TWI888738B (zh) 2025-07-01

Family

ID=85775410

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111124423A TWI888738B (zh) 2021-10-05 2022-06-30 經組態以偵測來自樣品之帶電粒子之系統

Country Status (8)

Country Link
US (1) US11749495B2 (https=)
EP (1) EP4338189A4 (https=)
JP (1) JP7698745B2 (https=)
KR (1) KR20240072969A (https=)
CN (1) CN117561586B (https=)
IL (1) IL309272B2 (https=)
TW (1) TWI888738B (https=)
WO (1) WO2023059686A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024185143A1 (https=) * 2023-03-09 2024-09-12
US20250239431A1 (en) * 2024-01-24 2025-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Electron microscope detector and related methods

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246479A (en) * 1978-02-20 1981-01-20 National Research Development Corporation Electrostatic energy analysis
US6501076B1 (en) * 2000-10-11 2002-12-31 Fei Company Electron analyzer having an integrated low pass filter
US20070221846A1 (en) * 2000-03-31 2007-09-27 Hideo Todokoro Scanning electron microscope
WO2008087384A2 (en) * 2007-01-15 2008-07-24 Oxford Instruments Analytical Limited Charged particle analyser and method
WO2012081428A1 (ja) * 2010-12-16 2012-06-21 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
US20160035533A1 (en) * 2013-03-25 2016-02-04 Hermes Microvision Inc. Energy Filter for Charged Particle Beam Apparatus
TW201704753A (zh) * 2015-03-24 2017-02-01 克萊譚克公司 用於具有改良之影像光束穩定性及詢問之帶電粒子顯微鏡之方法及系統

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8327737D0 (en) * 1983-10-17 1983-11-16 Texas Instruments Ltd Electron detector
US4943769A (en) 1989-03-21 1990-07-24 International Business Machines Corporation Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
US5644132A (en) * 1994-06-20 1997-07-01 Opan Technologies Ltd. System for high resolution imaging and measurement of topographic and material features on a specimen
JP3973372B2 (ja) * 2001-03-23 2007-09-12 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
US7141791B2 (en) 2004-09-07 2006-11-28 Kla-Tencor Technologies Corporation Apparatus and method for E-beam dark field imaging
US7276694B1 (en) 2005-03-29 2007-10-02 Kla-Tencor Technologies Corporation Defect detection using energy spectrometer
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
US8698093B1 (en) 2007-01-19 2014-04-15 Kla-Tencor Corporation Objective lens with deflector plates immersed in electrostatic lens field
JP5873227B2 (ja) * 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
US7714287B1 (en) 2008-06-05 2010-05-11 Kla-Tencor Corporation Apparatus and method for obtaining topographical dark-field images in a scanning electron microscope
WO2010047378A1 (ja) * 2008-10-24 2010-04-29 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
US8222600B2 (en) * 2009-05-24 2012-07-17 El-Mul Technologies Ltd. Charged particle detection system and method
US8237213B2 (en) 2010-07-15 2012-08-07 Micron Technology, Inc. Memory arrays having substantially vertical, adjacent semiconductor structures and the formation thereof
US8334508B1 (en) 2011-02-22 2012-12-18 Electron Optica, Inc. Mirror energy filter for electron beam apparatus
US8664594B1 (en) 2011-04-18 2014-03-04 Kla-Tencor Corporation Electron-optical system for high-speed and high-sensitivity inspections
US8692204B2 (en) 2011-04-26 2014-04-08 Kla-Tencor Corporation Apparatus and methods for electron beam detection
JP5663412B2 (ja) 2011-06-16 2015-02-04 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5860642B2 (ja) * 2011-09-07 2016-02-16 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
US8716662B1 (en) 2012-07-16 2014-05-06 Kla-Tencor Corporation Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations
US9000395B2 (en) 2013-03-25 2015-04-07 Hermes Microvision, Inc. Energy filter for charged particle beam apparatus
JP6295027B2 (ja) * 2013-04-03 2018-03-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた計測方法
EP3203494B1 (en) * 2014-09-24 2019-12-18 National Institute for Materials Science Energy-discrimination electron detector and scanning electron microscope in which same is used
US10614992B2 (en) 2015-07-15 2020-04-07 National University Corporation NARA Institute of Science and Technology Electrostatic lens, and parallel beam generation device and parallel beam convergence device which use electrostatic lens and collimator
JP6937254B2 (ja) * 2018-02-08 2021-09-22 株式会社日立ハイテク 検査システム、画像処理装置、および検査方法
US11087956B2 (en) 2018-06-29 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Detection systems in semiconductor metrology tools
WO2020136044A2 (en) * 2018-12-28 2020-07-02 Asml Netherlands B.V. Pulsed charged-particle beam system
WO2020141071A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Method for calibrating a scanning charged particle microscope
US11961704B2 (en) * 2019-07-02 2024-04-16 Hitachi High-Tech Corporation Charged particle beam system
JP2021034163A (ja) * 2019-08-20 2021-03-01 株式会社日立ハイテク 荷電粒子ビームシステム、及び重ね合わせずれ量測定方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246479A (en) * 1978-02-20 1981-01-20 National Research Development Corporation Electrostatic energy analysis
US20070221846A1 (en) * 2000-03-31 2007-09-27 Hideo Todokoro Scanning electron microscope
US6501076B1 (en) * 2000-10-11 2002-12-31 Fei Company Electron analyzer having an integrated low pass filter
WO2008087384A2 (en) * 2007-01-15 2008-07-24 Oxford Instruments Analytical Limited Charged particle analyser and method
WO2012081428A1 (ja) * 2010-12-16 2012-06-21 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
US20160035533A1 (en) * 2013-03-25 2016-02-04 Hermes Microvision Inc. Energy Filter for Charged Particle Beam Apparatus
TW201704753A (zh) * 2015-03-24 2017-02-01 克萊譚克公司 用於具有改良之影像光束穩定性及詢問之帶電粒子顯微鏡之方法及系統

Also Published As

Publication number Publication date
WO2023059686A1 (en) 2023-04-13
IL309272B2 (en) 2025-10-01
KR20240072969A (ko) 2024-05-24
IL309272B1 (en) 2025-06-01
US20230104558A1 (en) 2023-04-06
IL309272A (en) 2024-02-01
JP2024538473A (ja) 2024-10-23
JP7698745B2 (ja) 2025-06-25
EP4338189A1 (en) 2024-03-20
TW202336797A (zh) 2023-09-16
US11749495B2 (en) 2023-09-05
EP4338189A4 (en) 2025-07-30
CN117561586B (zh) 2024-11-15
CN117561586A (zh) 2024-02-13

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