CN117561586B - 用于带电粒子工具的带通带电粒子能量过滤检测器 - Google Patents

用于带电粒子工具的带通带电粒子能量过滤检测器 Download PDF

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Publication number
CN117561586B
CN117561586B CN202280044103.0A CN202280044103A CN117561586B CN 117561586 B CN117561586 B CN 117561586B CN 202280044103 A CN202280044103 A CN 202280044103A CN 117561586 B CN117561586 B CN 117561586B
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China
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mesh
energy
repulsive
charged particles
detector
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CN202280044103.0A
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English (en)
Chinese (zh)
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CN117561586A (zh
Inventor
蒋友飞
M·施泰格瓦尔德
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KLA Corp
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KLA Tencor Corp
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Publication of CN117561586A publication Critical patent/CN117561586A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • H01J2237/0492Lens systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05Arrangements for energy or mass analysis
    • H01J2237/053Arrangements for energy or mass analysis electrostatic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24475Scattered electron detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2448Secondary particle detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24485Energy spectrometers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)
CN202280044103.0A 2021-10-05 2022-10-05 用于带电粒子工具的带通带电粒子能量过滤检测器 Active CN117561586B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/494,784 US11749495B2 (en) 2021-10-05 2021-10-05 Bandpass charged particle energy filtering detector for charged particle tools
US17/494,784 2021-10-05
PCT/US2022/045736 WO2023059686A1 (en) 2021-10-05 2022-10-05 Bandpass charged particle energy filtering detector for charged particle tools

Publications (2)

Publication Number Publication Date
CN117561586A CN117561586A (zh) 2024-02-13
CN117561586B true CN117561586B (zh) 2024-11-15

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CN202280044103.0A Active CN117561586B (zh) 2021-10-05 2022-10-05 用于带电粒子工具的带通带电粒子能量过滤检测器

Country Status (8)

Country Link
US (1) US11749495B2 (https=)
EP (1) EP4338189A4 (https=)
JP (1) JP7698745B2 (https=)
KR (1) KR20240072969A (https=)
CN (1) CN117561586B (https=)
IL (1) IL309272B2 (https=)
TW (1) TWI888738B (https=)
WO (1) WO2023059686A1 (https=)

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JPWO2024185143A1 (https=) * 2023-03-09 2024-09-12
US20250239431A1 (en) * 2024-01-24 2025-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Electron microscope detector and related methods

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CN113412529A (zh) * 2018-12-28 2021-09-17 Asml荷兰有限公司 脉冲带电粒子束系统

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US7141791B2 (en) 2004-09-07 2006-11-28 Kla-Tencor Technologies Corporation Apparatus and method for E-beam dark field imaging
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US8698093B1 (en) 2007-01-19 2014-04-15 Kla-Tencor Corporation Objective lens with deflector plates immersed in electrostatic lens field
JP5873227B2 (ja) * 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
US7714287B1 (en) 2008-06-05 2010-05-11 Kla-Tencor Corporation Apparatus and method for obtaining topographical dark-field images in a scanning electron microscope
WO2010047378A1 (ja) * 2008-10-24 2010-04-29 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
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US8237213B2 (en) 2010-07-15 2012-08-07 Micron Technology, Inc. Memory arrays having substantially vertical, adjacent semiconductor structures and the formation thereof
JP5771628B2 (ja) * 2010-12-16 2015-09-02 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
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Also Published As

Publication number Publication date
WO2023059686A1 (en) 2023-04-13
IL309272B2 (en) 2025-10-01
KR20240072969A (ko) 2024-05-24
IL309272B1 (en) 2025-06-01
US20230104558A1 (en) 2023-04-06
IL309272A (en) 2024-02-01
JP2024538473A (ja) 2024-10-23
JP7698745B2 (ja) 2025-06-25
EP4338189A1 (en) 2024-03-20
TW202336797A (zh) 2023-09-16
US11749495B2 (en) 2023-09-05
TWI888738B (zh) 2025-07-01
EP4338189A4 (en) 2025-07-30
CN117561586A (zh) 2024-02-13

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