TWI885376B - 在研磨原位監測期間的濾波 - Google Patents

在研磨原位監測期間的濾波 Download PDF

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Publication number
TWI885376B
TWI885376B TW112119455A TW112119455A TWI885376B TW I885376 B TWI885376 B TW I885376B TW 112119455 A TW112119455 A TW 112119455A TW 112119455 A TW112119455 A TW 112119455A TW I885376 B TWI885376 B TW I885376B
Authority
TW
Taiwan
Prior art keywords
signal
polishing
monitoring system
filtered
substrate
Prior art date
Application number
TW112119455A
Other languages
English (en)
Chinese (zh)
Other versions
TW202336853A (zh
Inventor
席維庫瑪 迪漢達潘尼
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202336853A publication Critical patent/TW202336853A/zh
Application granted granted Critical
Publication of TWI885376B publication Critical patent/TWI885376B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/49—Nc machine tool, till multiple
    • G05B2219/49085—CMP end point analysis, measure parameters on points to detect end of polishing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Automation & Control Theory (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW112119455A 2018-03-12 2019-03-08 在研磨原位監測期間的濾波 TWI885376B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862641950P 2018-03-12 2018-03-12
US62/641,950 2018-03-12

Publications (2)

Publication Number Publication Date
TW202336853A TW202336853A (zh) 2023-09-16
TWI885376B true TWI885376B (zh) 2025-06-01

Family

ID=67842927

Family Applications (2)

Application Number Title Priority Date Filing Date
TW112119455A TWI885376B (zh) 2018-03-12 2019-03-08 在研磨原位監測期間的濾波
TW108107710A TWI805703B (zh) 2018-03-12 2019-03-08 在研磨原位監測期間的濾波

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108107710A TWI805703B (zh) 2018-03-12 2019-03-08 在研磨原位監測期間的濾波

Country Status (6)

Country Link
US (3) US11446783B2 (https=)
JP (1) JP7237083B2 (https=)
KR (2) KR102670962B1 (https=)
CN (1) CN111316403B (https=)
TW (2) TWI885376B (https=)
WO (1) WO2019177842A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102670962B1 (ko) 2018-03-12 2024-05-31 어플라이드 머티어리얼스, 인코포레이티드 연마의 인-시튜 모니터링 동안의 필터링
CN115943016A (zh) * 2020-07-14 2023-04-07 应用材料公司 在化学机械抛光期间检测不合格衬底处理事件的方法
KR20240161701A (ko) * 2021-03-03 2024-11-12 어플라이드 머티어리얼스, 인코포레이티드 공간 분해능을 제공하기 위한 모터 토크 모니터링 동안의 압력 신호들
JP2023124546A (ja) * 2022-02-25 2023-09-06 株式会社荏原製作所 研磨装置および研磨装置における研磨終点検出方法

Citations (6)

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EP1294534B1 (en) * 2000-05-19 2006-01-18 Applied Materials, Inc. In-situ endpoint detection and process monitoring method and apparatus for chemical mechanical polishing
TW200822204A (en) * 2006-09-12 2008-05-16 Ebara Corp Polishing apparatus and polishing method
US20150147940A1 (en) * 2013-11-27 2015-05-28 Applied Materials, Inc. Adjustment of Polishing Rates During Substrate Polishing With Predictive Filters
JP2016538728A (ja) * 2013-11-27 2016-12-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板研磨中の研磨速度の制限的調整
US20170113320A1 (en) * 2013-10-25 2017-04-27 Applied Materials, Inc. Applying dimensional reduction to spectral data from polishing substrates
JP6181156B2 (ja) * 2012-04-26 2017-08-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 研磨のインシトゥ監視時にデータをフィルタリングするための線形予測

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US5213655A (en) * 1990-05-16 1993-05-25 International Business Machines Corporation Device and method for detecting an end point in polishing operation
US5069002A (en) 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
EP0616362A3 (en) * 1993-03-15 1995-06-21 Tokyo Shibaura Electric Co Process for polishing workpieces and device therefor.
DE69635816T2 (de) 1995-03-28 2006-10-12 Applied Materials, Inc., Santa Clara Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
JP2953387B2 (ja) * 1996-08-12 1999-09-27 日本電気株式会社 ウェハの研磨装置及びウェハの研磨方法
US5865665A (en) 1997-02-14 1999-02-02 Yueh; William In-situ endpoint control apparatus for semiconductor wafer polishing process
US6230069B1 (en) 1998-06-26 2001-05-08 Advanced Micro Devices, Inc. System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control
JP2000218518A (ja) 1999-02-01 2000-08-08 Nec Corp 研磨装置
US6464824B1 (en) 1999-08-31 2002-10-15 Micron Technology, Inc. Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
JP2001198813A (ja) * 2000-01-13 2001-07-24 Toshiba Corp 研磨装置及びその研磨方法
US7087527B2 (en) 2002-08-28 2006-08-08 Micron Technology, Inc. Extended kalman filter incorporating offline metrology
US7306507B2 (en) 2005-08-22 2007-12-11 Applied Materials, Inc. Polishing pad assembly with glass or crystalline window
US20130065493A1 (en) * 2011-08-09 2013-03-14 Taro Takahashi Polishing monitoring method, polishing end point detection method, and polishing apparatus
JP6030041B2 (ja) * 2013-11-01 2016-11-24 株式会社荏原製作所 研磨装置および研磨方法
KR102670962B1 (ko) 2018-03-12 2024-05-31 어플라이드 머티어리얼스, 인코포레이티드 연마의 인-시튜 모니터링 동안의 필터링

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1294534B1 (en) * 2000-05-19 2006-01-18 Applied Materials, Inc. In-situ endpoint detection and process monitoring method and apparatus for chemical mechanical polishing
TW200822204A (en) * 2006-09-12 2008-05-16 Ebara Corp Polishing apparatus and polishing method
JP6181156B2 (ja) * 2012-04-26 2017-08-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 研磨のインシトゥ監視時にデータをフィルタリングするための線形予測
US20170113320A1 (en) * 2013-10-25 2017-04-27 Applied Materials, Inc. Applying dimensional reduction to spectral data from polishing substrates
US20150147940A1 (en) * 2013-11-27 2015-05-28 Applied Materials, Inc. Adjustment of Polishing Rates During Substrate Polishing With Predictive Filters
WO2015080863A1 (en) * 2013-11-27 2015-06-04 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters
JP2016538728A (ja) * 2013-11-27 2016-12-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板研磨中の研磨速度の制限的調整

Also Published As

Publication number Publication date
CN111316403B (zh) 2024-12-13
KR20200120745A (ko) 2020-10-21
JP7237083B2 (ja) 2023-03-10
US11446783B2 (en) 2022-09-20
US20190275633A1 (en) 2019-09-12
TW201946135A (zh) 2019-12-01
CN111316403A (zh) 2020-06-19
US20230286105A1 (en) 2023-09-14
US20220388113A1 (en) 2022-12-08
JP2021517359A (ja) 2021-07-15
KR102853782B1 (ko) 2025-09-03
US11679466B2 (en) 2023-06-20
US11969855B2 (en) 2024-04-30
TWI805703B (zh) 2023-06-21
TW202336853A (zh) 2023-09-16
WO2019177842A1 (en) 2019-09-19
KR102670962B1 (ko) 2024-05-31
KR20240093966A (ko) 2024-06-24

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