CN111316403B - 在抛光原位监测期间的滤波 - Google Patents

在抛光原位监测期间的滤波 Download PDF

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Publication number
CN111316403B
CN111316403B CN201980005581.9A CN201980005581A CN111316403B CN 111316403 B CN111316403 B CN 111316403B CN 201980005581 A CN201980005581 A CN 201980005581A CN 111316403 B CN111316403 B CN 111316403B
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CN
China
Prior art keywords
motor
polishing
signal
filtered
state signal
Prior art date
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Application number
CN201980005581.9A
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English (en)
Chinese (zh)
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CN111316403A (zh
Inventor
锡瓦库马尔·达丹帕尼
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of CN111316403A publication Critical patent/CN111316403A/zh
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Publication of CN111316403B publication Critical patent/CN111316403B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/49—Nc machine tool, till multiple
    • G05B2219/49085—CMP end point analysis, measure parameters on points to detect end of polishing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Automation & Control Theory (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201980005581.9A 2018-03-12 2019-03-06 在抛光原位监测期间的滤波 Active CN111316403B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862641950P 2018-03-12 2018-03-12
US62/641,950 2018-03-12
PCT/US2019/021045 WO2019177842A1 (en) 2018-03-12 2019-03-06 Filtering during in-situ monitoring of polishing

Publications (2)

Publication Number Publication Date
CN111316403A CN111316403A (zh) 2020-06-19
CN111316403B true CN111316403B (zh) 2024-12-13

Family

ID=67842927

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980005581.9A Active CN111316403B (zh) 2018-03-12 2019-03-06 在抛光原位监测期间的滤波

Country Status (6)

Country Link
US (3) US11446783B2 (https=)
JP (1) JP7237083B2 (https=)
KR (2) KR102853782B1 (https=)
CN (1) CN111316403B (https=)
TW (2) TWI805703B (https=)
WO (1) WO2019177842A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019177842A1 (en) 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing
EP4182119A4 (en) * 2020-07-14 2024-08-07 Applied Materials, Inc. METHOD FOR DETECTING NON-CONFORMING SUBSTRATE PROCESSING EVENTS DURING CHEMICAL MECHANICAL POLISHING
KR102747336B1 (ko) * 2021-03-03 2024-12-31 어플라이드 머티어리얼스, 인코포레이티드 공간 분해능을 제공하기 위한 모터 토크 모니터링 동안의 압력 신호들
JP2023124546A (ja) * 2022-02-25 2023-09-06 株式会社荏原製作所 研磨装置および研磨装置における研磨終点検出方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616362A2 (en) * 1993-03-15 1994-09-21 Kabushiki Kaisha Toshiba Method for polishing work piece and apparatus therefor
JP2001198813A (ja) * 2000-01-13 2001-07-24 Toshiba Corp 研磨装置及びその研磨方法

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US5213655A (en) * 1990-05-16 1993-05-25 International Business Machines Corporation Device and method for detecting an end point in polishing operation
US5069002A (en) 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
JP3431115B2 (ja) 1995-03-28 2003-07-28 アプライド マテリアルズ インコーポレイテッド ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法
JP2953387B2 (ja) 1996-08-12 1999-09-27 日本電気株式会社 ウェハの研磨装置及びウェハの研磨方法
US5865665A (en) 1997-02-14 1999-02-02 Yueh; William In-situ endpoint control apparatus for semiconductor wafer polishing process
US6230069B1 (en) * 1998-06-26 2001-05-08 Advanced Micro Devices, Inc. System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control
JP2000218518A (ja) * 1999-02-01 2000-08-08 Nec Corp 研磨装置
US6464824B1 (en) 1999-08-31 2002-10-15 Micron Technology, Inc. Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
DE60116757T4 (de) * 2000-05-19 2007-01-18 Applied Materials, Inc., Santa Clara Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges
US7087527B2 (en) 2002-08-28 2006-08-08 Micron Technology, Inc. Extended kalman filter incorporating offline metrology
US7226339B2 (en) 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
CN101511539B (zh) * 2006-09-12 2012-08-22 株式会社荏原制作所 研磨装置及研磨方法
US20130065493A1 (en) * 2011-08-09 2013-03-14 Taro Takahashi Polishing monitoring method, polishing end point detection method, and polishing apparatus
US9308618B2 (en) * 2012-04-26 2016-04-12 Applied Materials, Inc. Linear prediction for filtering of data during in-situ monitoring of polishing
US9551567B2 (en) 2013-10-25 2017-01-24 Applied Materials, Inc. Reducing noise in spectral data from polishing substrates
JP6030041B2 (ja) * 2013-11-01 2016-11-24 株式会社荏原製作所 研磨装置および研磨方法
US9375824B2 (en) * 2013-11-27 2016-06-28 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters
US9490186B2 (en) 2013-11-27 2016-11-08 Applied Materials, Inc. Limiting adjustment of polishing rates during substrate polishing
WO2019177842A1 (en) 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616362A2 (en) * 1993-03-15 1994-09-21 Kabushiki Kaisha Toshiba Method for polishing work piece and apparatus therefor
JP2001198813A (ja) * 2000-01-13 2001-07-24 Toshiba Corp 研磨装置及びその研磨方法

Also Published As

Publication number Publication date
TW201946135A (zh) 2019-12-01
KR102853782B1 (ko) 2025-09-03
US20230286105A1 (en) 2023-09-14
WO2019177842A1 (en) 2019-09-19
US11446783B2 (en) 2022-09-20
TW202336853A (zh) 2023-09-16
US20220388113A1 (en) 2022-12-08
KR102670962B1 (ko) 2024-05-31
JP7237083B2 (ja) 2023-03-10
TWI805703B (zh) 2023-06-21
US11969855B2 (en) 2024-04-30
CN111316403A (zh) 2020-06-19
KR20240093966A (ko) 2024-06-24
US11679466B2 (en) 2023-06-20
KR20200120745A (ko) 2020-10-21
US20190275633A1 (en) 2019-09-12
JP2021517359A (ja) 2021-07-15
TWI885376B (zh) 2025-06-01

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