TWI805703B - 在研磨原位監測期間的濾波 - Google Patents

在研磨原位監測期間的濾波 Download PDF

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Publication number
TWI805703B
TWI805703B TW108107710A TW108107710A TWI805703B TW I805703 B TWI805703 B TW I805703B TW 108107710 A TW108107710 A TW 108107710A TW 108107710 A TW108107710 A TW 108107710A TW I805703 B TWI805703 B TW I805703B
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TW
Taiwan
Prior art keywords
signal
monitoring system
filtered
grinding
states
Prior art date
Application number
TW108107710A
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English (en)
Chinese (zh)
Other versions
TW201946135A (zh
Inventor
席維庫瑪 迪漢達潘尼
Original Assignee
美商應用材料股份有限公司
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Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201946135A publication Critical patent/TW201946135A/zh
Application granted granted Critical
Publication of TWI805703B publication Critical patent/TWI805703B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/49—Nc machine tool, till multiple
    • G05B2219/49085—CMP end point analysis, measure parameters on points to detect end of polishing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Automation & Control Theory (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW108107710A 2018-03-12 2019-03-08 在研磨原位監測期間的濾波 TWI805703B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862641950P 2018-03-12 2018-03-12
US62/641,950 2018-03-12

Publications (2)

Publication Number Publication Date
TW201946135A TW201946135A (zh) 2019-12-01
TWI805703B true TWI805703B (zh) 2023-06-21

Family

ID=67842927

Family Applications (2)

Application Number Title Priority Date Filing Date
TW108107710A TWI805703B (zh) 2018-03-12 2019-03-08 在研磨原位監測期間的濾波
TW112119455A TWI885376B (zh) 2018-03-12 2019-03-08 在研磨原位監測期間的濾波

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112119455A TWI885376B (zh) 2018-03-12 2019-03-08 在研磨原位監測期間的濾波

Country Status (6)

Country Link
US (3) US11446783B2 (https=)
JP (1) JP7237083B2 (https=)
KR (2) KR102853782B1 (https=)
CN (1) CN111316403B (https=)
TW (2) TWI805703B (https=)
WO (1) WO2019177842A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019177842A1 (en) 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing
EP4182119A4 (en) * 2020-07-14 2024-08-07 Applied Materials, Inc. METHOD FOR DETECTING NON-CONFORMING SUBSTRATE PROCESSING EVENTS DURING CHEMICAL MECHANICAL POLISHING
KR102747336B1 (ko) * 2021-03-03 2024-12-31 어플라이드 머티어리얼스, 인코포레이티드 공간 분해능을 제공하기 위한 모터 토크 모니터링 동안의 압력 신호들
JP2023124546A (ja) * 2022-02-25 2023-09-06 株式会社荏原製作所 研磨装置および研磨装置における研磨終点検出方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0738561B1 (en) * 1995-03-28 2002-01-23 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations
US20130288572A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Linear Prediction For Filtering Of Data During In-Situ Monitoring Of Polishing
US20150125971A1 (en) * 2013-11-01 2015-05-07 Ebara Corporation Polishing apparatus and polishing method
US20150147940A1 (en) * 2013-11-27 2015-05-28 Applied Materials, Inc. Adjustment of Polishing Rates During Substrate Polishing With Predictive Filters
US20170113320A1 (en) * 2013-10-25 2017-04-27 Applied Materials, Inc. Applying dimensional reduction to spectral data from polishing substrates

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US5213655A (en) * 1990-05-16 1993-05-25 International Business Machines Corporation Device and method for detecting an end point in polishing operation
US5069002A (en) 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
EP0616362A3 (en) * 1993-03-15 1995-06-21 Tokyo Shibaura Electric Co Process for polishing workpieces and device therefor.
JP2953387B2 (ja) 1996-08-12 1999-09-27 日本電気株式会社 ウェハの研磨装置及びウェハの研磨方法
US5865665A (en) 1997-02-14 1999-02-02 Yueh; William In-situ endpoint control apparatus for semiconductor wafer polishing process
US6230069B1 (en) * 1998-06-26 2001-05-08 Advanced Micro Devices, Inc. System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control
JP2000218518A (ja) * 1999-02-01 2000-08-08 Nec Corp 研磨装置
US6464824B1 (en) 1999-08-31 2002-10-15 Micron Technology, Inc. Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
JP2001198813A (ja) 2000-01-13 2001-07-24 Toshiba Corp 研磨装置及びその研磨方法
DE60116757T4 (de) * 2000-05-19 2007-01-18 Applied Materials, Inc., Santa Clara Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges
US7087527B2 (en) 2002-08-28 2006-08-08 Micron Technology, Inc. Extended kalman filter incorporating offline metrology
US7226339B2 (en) 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
CN101511539B (zh) * 2006-09-12 2012-08-22 株式会社荏原制作所 研磨装置及研磨方法
US20130065493A1 (en) * 2011-08-09 2013-03-14 Taro Takahashi Polishing monitoring method, polishing end point detection method, and polishing apparatus
US9490186B2 (en) 2013-11-27 2016-11-08 Applied Materials, Inc. Limiting adjustment of polishing rates during substrate polishing
WO2019177842A1 (en) 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0738561B1 (en) * 1995-03-28 2002-01-23 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations
US20130288572A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Linear Prediction For Filtering Of Data During In-Situ Monitoring Of Polishing
US20170113320A1 (en) * 2013-10-25 2017-04-27 Applied Materials, Inc. Applying dimensional reduction to spectral data from polishing substrates
US20150125971A1 (en) * 2013-11-01 2015-05-07 Ebara Corporation Polishing apparatus and polishing method
US20150147940A1 (en) * 2013-11-27 2015-05-28 Applied Materials, Inc. Adjustment of Polishing Rates During Substrate Polishing With Predictive Filters
WO2015080863A1 (en) * 2013-11-27 2015-06-04 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters

Also Published As

Publication number Publication date
TW201946135A (zh) 2019-12-01
KR102853782B1 (ko) 2025-09-03
US20230286105A1 (en) 2023-09-14
WO2019177842A1 (en) 2019-09-19
US11446783B2 (en) 2022-09-20
TW202336853A (zh) 2023-09-16
US20220388113A1 (en) 2022-12-08
KR102670962B1 (ko) 2024-05-31
JP7237083B2 (ja) 2023-03-10
CN111316403B (zh) 2024-12-13
US11969855B2 (en) 2024-04-30
CN111316403A (zh) 2020-06-19
KR20240093966A (ko) 2024-06-24
US11679466B2 (en) 2023-06-20
KR20200120745A (ko) 2020-10-21
US20190275633A1 (en) 2019-09-12
JP2021517359A (ja) 2021-07-15
TWI885376B (zh) 2025-06-01

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