TWI884204B - 用於溝槽輪廓最佳化的多區氣體分配板 - Google Patents

用於溝槽輪廓最佳化的多區氣體分配板 Download PDF

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Publication number
TWI884204B
TWI884204B TW110101035A TW110101035A TWI884204B TW I884204 B TWI884204 B TW I884204B TW 110101035 A TW110101035 A TW 110101035A TW 110101035 A TW110101035 A TW 110101035A TW I884204 B TWI884204 B TW I884204B
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TW
Taiwan
Prior art keywords
distribution device
gas
processing system
substrate processing
gas distribution
Prior art date
Application number
TW110101035A
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English (en)
Chinese (zh)
Other versions
TW202140840A (zh
Inventor
文胤 彭
克雷格 羅斯理
丹 馬霍爾
Original Assignee
美商蘭姆研究公司
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Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202140840A publication Critical patent/TW202140840A/zh
Application granted granted Critical
Publication of TWI884204B publication Critical patent/TWI884204B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Casting Support Devices, Ladles, And Melt Control Thereby (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW110101035A 2020-01-13 2021-01-12 用於溝槽輪廓最佳化的多區氣體分配板 TWI884204B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062960390P 2020-01-13 2020-01-13
US62/960,390 2020-01-13

Publications (2)

Publication Number Publication Date
TW202140840A TW202140840A (zh) 2021-11-01
TWI884204B true TWI884204B (zh) 2025-05-21

Family

ID=76864771

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110101035A TWI884204B (zh) 2020-01-13 2021-01-12 用於溝槽輪廓最佳化的多區氣體分配板
TW114113668A TWI913154B (zh) 2020-01-13 2021-01-12 用於溝槽輪廓最佳化的多區氣體分配板

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW114113668A TWI913154B (zh) 2020-01-13 2021-01-12 用於溝槽輪廓最佳化的多區氣體分配板

Country Status (6)

Country Link
US (1) US12394603B2 (https=)
JP (2) JP7685507B2 (https=)
KR (1) KR20220127895A (https=)
CN (1) CN114981477A (https=)
TW (2) TWI884204B (https=)
WO (1) WO2021146099A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201213603A (en) * 2010-06-18 2012-04-01 Applied Materials Inc Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
TW201239132A (en) * 2011-03-18 2012-10-01 Applied Materials Inc Multiple level showerhead design
TW201920753A (zh) * 2017-07-28 2019-06-01 美商蘭姆研究公司 單片陶瓷氣體分配板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4358727B2 (ja) 2004-12-09 2009-11-04 東京エレクトロン株式会社 ガス供給装置，基板処理装置及び供給ガス設定方法
US8475625B2 (en) 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US20080236495A1 (en) * 2007-03-27 2008-10-02 Structured Materials Inc. Showerhead for chemical vapor deposition (CVD) apparatus
JP5192214B2 (ja) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
TW201325326A (zh) 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
JP2016036018A (ja) 2014-07-31 2016-03-17 東京エレクトロン株式会社 プラズマ処理装置及びガス供給部材
US10577690B2 (en) * 2016-05-20 2020-03-03 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
JP7753351B2 (ja) 2020-09-21 2025-10-14 ラム リサーチ コーポレーション Ｔｃｐチャンバのガスプレートを浮遊させるためのキャリアリング

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201213603A (en) * 2010-06-18 2012-04-01 Applied Materials Inc Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
TW201239132A (en) * 2011-03-18 2012-10-01 Applied Materials Inc Multiple level showerhead design
TW201920753A (zh) * 2017-07-28 2019-06-01 美商蘭姆研究公司 單片陶瓷氣體分配板

Also Published As

Publication number Publication date
CN114981477A (zh) 2022-08-30
TW202140840A (zh) 2021-11-01
US12394603B2 (en) 2025-08-19
JP2023512451A (ja) 2023-03-27
JP7685507B2 (ja) 2025-05-29
US20230091524A1 (en) 2023-03-23
KR20220127895A (ko) 2022-09-20
JP2025118919A (ja) 2025-08-13
WO2021146099A1 (en) 2021-07-22
TW202530457A (zh) 2025-08-01
TWI913154B (zh) 2026-01-21

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