CN114981477A - 用于沟槽轮廓优化的多区气体分配板 - Google Patents
用于沟槽轮廓优化的多区气体分配板 Download PDFInfo
- Publication number
- CN114981477A CN114981477A CN202180009083.9A CN202180009083A CN114981477A CN 114981477 A CN114981477 A CN 114981477A CN 202180009083 A CN202180009083 A CN 202180009083A CN 114981477 A CN114981477 A CN 114981477A
- Authority
- CN
- China
- Prior art keywords
- plenum
- gas distribution
- distribution apparatus
- lobes
- lower plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Casting Support Devices, Ladles, And Melt Control Thereby (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062960390P | 2020-01-13 | 2020-01-13 | |
| US62/960,390 | 2020-01-13 | ||
| PCT/US2021/012604 WO2021146099A1 (en) | 2020-01-13 | 2021-01-08 | Multizone gas distribution plate for trench profile optimization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114981477A true CN114981477A (zh) | 2022-08-30 |
Family
ID=76864771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180009083.9A Pending CN114981477A (zh) | 2020-01-13 | 2021-01-08 | 用于沟槽轮廓优化的多区气体分配板 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12394603B2 (https=) |
| JP (2) | JP7685507B2 (https=) |
| KR (1) | KR20220127895A (https=) |
| CN (1) | CN114981477A (https=) |
| TW (2) | TWI884204B (https=) |
| WO (1) | WO2021146099A1 (https=) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4358727B2 (ja) | 2004-12-09 | 2009-11-04 | 東京エレクトロン株式会社 | ガス供給装置,基板処理装置及び供給ガス設定方法 |
| US8475625B2 (en) | 2006-05-03 | 2013-07-02 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
| US8440049B2 (en) | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
| US20080236495A1 (en) * | 2007-03-27 | 2008-10-02 | Structured Materials Inc. | Showerhead for chemical vapor deposition (CVD) apparatus |
| JP5192214B2 (ja) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | ガス供給装置、基板処理装置および基板処理方法 |
| US8910644B2 (en) | 2010-06-18 | 2014-12-16 | Applied Materials, Inc. | Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas |
| TWI534291B (zh) * | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | 噴淋頭組件 |
| TW201325326A (zh) | 2011-10-05 | 2013-06-16 | 應用材料股份有限公司 | 電漿處理設備及其基板支撐組件 |
| JP2016036018A (ja) | 2014-07-31 | 2016-03-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びガス供給部材 |
| US10577690B2 (en) * | 2016-05-20 | 2020-03-03 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
| US20190032211A1 (en) * | 2017-07-28 | 2019-01-31 | Lam Research Corporation | Monolithic ceramic gas distribution plate |
| JP7753351B2 (ja) | 2020-09-21 | 2025-10-14 | ラム リサーチ コーポレーション | Tcpチャンバのガスプレートを浮遊させるためのキャリアリング |
-
2021
- 2021-01-08 JP JP2022542658A patent/JP7685507B2/ja active Active
- 2021-01-08 WO PCT/US2021/012604 patent/WO2021146099A1/en not_active Ceased
- 2021-01-08 CN CN202180009083.9A patent/CN114981477A/zh active Pending
- 2021-01-08 KR KR1020227028030A patent/KR20220127895A/ko active Pending
- 2021-01-08 US US17/792,157 patent/US12394603B2/en active Active
- 2021-01-12 TW TW110101035A patent/TWI884204B/zh active
- 2021-01-12 TW TW114113668A patent/TWI913154B/zh active
-
2025
- 2025-05-19 JP JP2025083017A patent/JP2025118919A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202140840A (zh) | 2021-11-01 |
| US12394603B2 (en) | 2025-08-19 |
| JP2023512451A (ja) | 2023-03-27 |
| JP7685507B2 (ja) | 2025-05-29 |
| US20230091524A1 (en) | 2023-03-23 |
| KR20220127895A (ko) | 2022-09-20 |
| JP2025118919A (ja) | 2025-08-13 |
| WO2021146099A1 (en) | 2021-07-22 |
| TWI884204B (zh) | 2025-05-21 |
| TW202530457A (zh) | 2025-08-01 |
| TWI913154B (zh) | 2026-01-21 |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |