TWI856465B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TWI856465B
TWI856465B TW111149861A TW111149861A TWI856465B TW I856465 B TWI856465 B TW I856465B TW 111149861 A TW111149861 A TW 111149861A TW 111149861 A TW111149861 A TW 111149861A TW I856465 B TWI856465 B TW I856465B
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opening
valve
liquid
aforementioned
nozzle
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TW202335073A (en
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杉本健太郎
吉原直彦
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/085Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to flow or pressure of liquid or other fluent material to be discharged
    • B05B12/087Flow or presssure regulators, i.e. non-electric unitary devices comprising a sensing element, e.g. a piston or a membrane, and a controlling element, e.g. a valve
    • B05B12/088Flow or presssure regulators, i.e. non-electric unitary devices comprising a sensing element, e.g. a piston or a membrane, and a controlling element, e.g. a valve the sensing element being a flexible member, e.g. membrane, diaphragm, bellows
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B15/00Details of spraying plant or spraying apparatus not otherwise provided for; Accessories
    • B05B15/60Arrangements for mounting, supporting or holding spraying apparatus
    • B05B15/68Arrangements for adjusting the position of spray heads
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/023Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A substrate processing apparatus (100) includes a liquid feed pipe (41), a supply pipe (43), a return pipe (44), a branch part (42), a first valve (47), and a second valve (48). The branch part (42) serves as a branch point among the liquid feed pipe (41), the supply pipe (43), and the return pipe (44). The first valve (47) is provided in the liquid feed pipe (41) and adjusts the flow rate of a processing liquid. The second valve (48) is provided in the return pipe (44). Setting the first valve (47) in an open state and the second valve (48) in a closed state brings a discharge state in which the processing liquid is allowed to flow from the liquid feed pipe (41) to the supply pipe (43) and discharged from a chemical liquid nozzle (21). Setting the second valve (48) from the closed state to the open state brings a processing liquid returning state in which the processing liquid is allowed to flow from the supply pipe (43) to the return pipe (44).

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明係關於一種基板處理裝置及基板處理方法。The present invention relates to a substrate processing device and a substrate processing method.

以往,在如半導體裝置及液晶顯示裝置之包含有基板之裝置的製造步驟中,使用對基板進行處理之基板處理裝置。基板例如為半導體晶圓或液晶顯示裝置用玻璃基板。Conventionally, in the manufacturing process of a device including a substrate such as a semiconductor device or a liquid crystal display device, a substrate processing device is used to process the substrate. The substrate is, for example, a semiconductor wafer or a glass substrate for a liquid crystal display device.

專利文獻1揭示有一種單片式之基板處理裝置,其用以一片一片地處理基板。於專利文獻1記載之基板處理裝置,其具備有旋轉卡盤及處理液供給裝置。旋轉卡盤使基板旋轉。處理液供給裝置朝保持於旋轉卡盤之基板供給處理液。處理液供給裝置具備有噴嘴、供給配管及閥。噴嘴朝基板吐出處理液。供給配管朝噴嘴供給處理液。閥被設於供給配管。處理液藉由自噴嘴吐出而供給至基板。閥具備有閥體及閥座。藉由閥體與閥座接觸而將閥關閉,且藉由閥體自閥座分離而將閥開放。 [先前技術文獻] [專利文獻] Patent document 1 discloses a single-chip substrate processing device for processing substrates one by one. The substrate processing device described in patent document 1 is provided with a rotary chuck and a processing liquid supply device. The rotary chuck rotates the substrate. The processing liquid supply device supplies processing liquid to the substrate held on the rotary chuck. The processing liquid supply device is provided with a nozzle, a supply pipe and a valve. The nozzle spits out processing liquid toward the substrate. The supply pipe supplies processing liquid to the nozzle. The valve is provided on the supply pipe. The processing liquid is supplied to the substrate by being spewed from the nozzle. The valve is provided with a valve body and a valve seat. The valve is closed by the contact between the valve body and the valve seat, and the valve is opened by the separation of the valve body from the valve seat. [Prior art document] [Patent document]

專利文獻1:日本專利特開2009-222189號公報Patent document 1: Japanese Patent Publication No. 2009-222189

(發明所欲解決之問題)(Invent the problem you want to solve)

然而,於專利文獻1記載之基板處理裝置中,其存在以下之情況:將閥關閉之後,於閥與噴嘴之間殘留有處理液。於此情況下,在基板處理裝置未進行基板處理之狀態下,閥與噴嘴之間存在之處理液有時會自噴嘴滴落。However, in the substrate processing apparatus described in Patent Document 1, there is a situation in which a processing liquid remains between the valve and the nozzle after the valve is closed. In this case, when the substrate processing apparatus is not processing a substrate, the processing liquid between the valve and the nozzle may drip from the nozzle.

本發明係鑑於上述問題所完成者,其目的在於,提供一種基板處理裝置及基板處理方法,其可於基板處理裝置未進行基板處理之狀態下,抑制處理液自噴嘴滴落。 (解決問題之技術手段) The present invention is made in view of the above-mentioned problem, and its purpose is to provide a substrate processing device and a substrate processing method, which can suppress the dripping of the processing liquid from the nozzle when the substrate processing device is not performing substrate processing. (Technical means for solving the problem)

本發明之第一態樣之基板處理裝置,其係利用自噴嘴朝向基板供給處理液而對前述基板進行處理者。該基板處理裝置具備有:送液配管、供給配管、返回配管、分歧部、第一閥、及第二閥。前述送液配管導引前述處理液。前述供給配管將由前述送液配管所導引之前述處理液朝向前述噴嘴導引。前述返回配管沿著與前述供給配管不同之路徑導引由前述送液配管所導引之前述處理液。前述分歧部係前述送液配管、前述供給配管及前述返回配管之分歧點。前述第一閥被設於前述送液配管,可調整自前述送液配管供給至前述分歧部之處理液的流量。前述第二閥被設於前述返回配管。藉由將前述第一閥設為開放狀態且將前述第二閥設為關閉狀態,以成為吐出狀態,該吐出狀態係使前述處理液自前述送液配管朝向前述供給配管流通而自前述噴嘴吐出前述處理液的狀態。藉由將前述第二閥自關閉狀態設為開放狀態,以成為處理液返回狀態,該處理液返回狀態係使前述處理液自前述供給配管朝向前述返回配管流通的狀態。The first aspect of the present invention is a substrate processing device that processes the substrate by supplying a processing liquid from a nozzle toward the substrate. The substrate processing device comprises: a liquid supply pipe, a supply pipe, a return pipe, a branch portion, a first valve, and a second valve. The liquid supply pipe guides the processing liquid. The supply pipe guides the processing liquid guided by the liquid supply pipe toward the nozzle. The return pipe guides the processing liquid guided by the liquid supply pipe along a path different from that of the supply pipe. The branch portion is a branch point of the liquid supply pipe, the supply pipe, and the return pipe. The first valve is provided on the liquid supply pipe, and can adjust the flow rate of the processing liquid supplied from the liquid supply pipe to the branch portion. The second valve is provided on the return pipe. By setting the first valve to an open state and the second valve to a closed state, a discharging state is achieved, in which the treatment liquid flows from the liquid delivery pipe toward the supply pipe and the treatment liquid is discharged from the nozzle. By setting the second valve from the closed state to the open state, a treatment liquid return state is achieved, in which the treatment liquid flows from the supply pipe toward the return pipe.

於本發明之第一態樣之基板處理裝置中,前述第一閥亦可為,於關閉狀態下不完全將前述送液配管之處理液流路關閉之閥。In the substrate processing apparatus of the first aspect of the present invention, the first valve may be a valve that does not completely close the processing liquid flow path of the liquid delivery pipe in a closed state.

於本發明之第一態樣之基板處理裝置中,供前述處理液通過之流路,亦可包含有:第一流路,其相對於前述分歧部位於前述送液配管側;第二流路,其相對於前述分歧部位於前述供給配管側;及第三流路,其相對於前述分歧部位於前述返回配管側。第一角度亦可大於第二角度。前述第二角度亦可為,自前述分歧部朝向前述第一流路之第一方向與自前述分歧部朝向前述第二流路之第二方向所夾之角度。前述第一角度亦可為,前述第一方向與自前述分歧部朝向前述第三流路之第三方向所夾之角度。In the substrate processing device of the first aspect of the present invention, the flow path for the aforementioned processing liquid to pass through may also include: a first flow path, which is on the aforementioned liquid delivery pipe side relative to the aforementioned diverging portion; a second flow path, which is on the aforementioned supply pipe side relative to the aforementioned diverging portion; and a third flow path, which is on the aforementioned return pipe side relative to the aforementioned diverging portion. The first angle may also be greater than the second angle. The aforementioned second angle may also be an angle between a first direction from the aforementioned diverging portion toward the aforementioned first flow path and a second direction from the aforementioned diverging portion toward the aforementioned second flow path. The aforementioned first angle may also be an angle between the aforementioned first direction and a third direction from the aforementioned diverging portion toward the aforementioned third flow path.

於本發明之第一態樣之基板處理裝置中,前述第一流路及前述第三流路亦可自前述分歧部朝大致水平方向延伸。前述第二流路亦可自前述分歧部朝上方延伸。In the substrate processing apparatus of the first aspect of the present invention, the first flow path and the third flow path may extend from the branching portion in a substantially horizontal direction, and the second flow path may extend upward from the branching portion.

本發明之第一態樣之基板處理裝置,亦更具備有收容槽,其收容來自前述返回配管所供給之前述處理液。前述噴嘴之前端亦可被配置於較前述返回配管之排出口為高的位置。The substrate processing device of the first aspect of the present invention is also provided with a receiving tank for receiving the aforementioned processing liquid supplied from the aforementioned return pipe. The front end of the aforementioned nozzle can also be arranged at a position higher than the discharge port of the aforementioned return pipe.

於本發明之第一態樣之基板處理裝置中,亦可於前述送液配管及前述供給配管不設置前述第一閥以外的閥。In the substrate processing apparatus of the first aspect of the present invention, no valve other than the first valve may be provided on the liquid delivery pipe and the supply pipe.

本發明之第一態樣之基板處理裝置,亦更具備有控制部,其控制前述第一閥及前述第二閥。前述控制部亦可將前述第一閥之開度至少切換為第一開度及第二開度。前述第二開度亦可為小於前述第一開度。前述控制部亦可藉由將前述第一閥之開度設為前述第一開度且將前述第二閥設為關閉狀態,以設為前述吐出狀態。此外,前述控制部亦可藉由將前述第一閥之開度設為前述第二開度且將前述第二閥設為開放狀態,以設為前述處理液返回狀態。The substrate processing device of the first aspect of the present invention is also further equipped with a control unit, which controls the aforementioned first valve and the aforementioned second valve. The aforementioned control unit can also switch the opening of the aforementioned first valve to at least the first opening and the second opening. The aforementioned second opening can also be smaller than the aforementioned first opening. The aforementioned control unit can also set the aforementioned ejection state by setting the opening of the aforementioned first valve to the aforementioned first opening and setting the aforementioned second valve to the closed state. In addition, the aforementioned control unit can also set the aforementioned processing liquid return state by setting the opening of the aforementioned first valve to the aforementioned second opening and setting the aforementioned second valve to the open state.

於本發明之第一態樣之基板處理裝置中,前述控制部亦可將前述第一閥之開度至少切換為前述第一開度、前述第二開度及第三開度。前述第三開度亦可為小於前述第二開度。前述控制部亦可藉由將前述第一閥之開度自前述第二開度設為前述第三開度,且將前述第二閥保持於前述開放狀態,以設為吐出停止狀態,該吐出停止狀態係使較前述吐出狀態少量之前述處理液自前述送液配管朝向前述返回配管流通的狀態。In the substrate processing apparatus of the first aspect of the present invention, the control unit may switch the opening of the first valve to at least the first opening, the second opening, and the third opening. The third opening may be smaller than the second opening. The control unit may set the opening of the first valve from the second opening to the third opening and keep the second valve in the open state to set the valve to a discharge stop state, wherein a smaller amount of the treatment liquid than the discharge state flows from the liquid delivery pipe toward the return pipe.

本發明之第一態樣之基板處理裝置,其更具備移動機構,其使前述噴嘴於處理位置與退避位置之間移動。前述處理位置亦可在前述基板之上方的位置。前述退避位置亦可在離開前述基板上方的位置。前述控制部亦可控制前述移動機構。前述控制部亦可將前述第一閥之開度切換為前述第一開度、前述第二開度、前述第三開度及第四開度。前述第四開度亦可為小於前述第一開度,且大於前述第二開度。前述控制部亦可於將前述噴嘴配置於前述退避位置之狀態下,藉由將前述第一閥之開度自前述第三開度設為前述第四開度且將前述第二閥自前述開放狀態設為前述關閉狀態,以設為預備吐出狀態,該預備吐出狀態係使前述處理液自前述送液配管朝向前述供給配管流通而自前述噴嘴吐出前述處理液的狀態。前述控制部亦可於將前述噴嘴配置於前述退避位置之狀態下,藉由將前述第一閥之開度自前述第四開度設為前述第二開度,且將前述第二閥自前述關閉狀態設為前述開放狀態,以設為預備吐出處理液返回狀態,該預備吐出處理液返回狀態係使前述處理液自前述供給配管朝向前述返回配管流通的狀態。前述控制部亦可於前述預備吐出處理液返回狀態下前述供給配管內部之前述處理液耗盡之前,藉由使前述噴嘴自前述退避位置移動至前述處理位置,且將前述第一閥之開度自前述第二開度設為前述第一開度,將前述第二閥自前述開放狀態設為前述關閉狀態,以設為前述吐出狀態。The substrate processing device of the first aspect of the present invention is further provided with a moving mechanism, which moves the nozzle between a processing position and a retreat position. The processing position may be located above the substrate. The retreat position may be located away from the substrate. The control unit may control the moving mechanism. The control unit may switch the opening of the first valve to the first opening, the second opening, the third opening, and the fourth opening. The fourth opening may be smaller than the first opening and larger than the second opening. The control unit may also, when the nozzle is placed in the retreat position, set the opening of the first valve from the third opening to the fourth opening and the second valve from the open state to the closed state, so as to set the nozzle in a preparatory discharging state, wherein the preparatory discharging state is a state in which the treatment liquid flows from the liquid delivery pipe toward the supply pipe and the treatment liquid is discharged from the nozzle. The control unit may also, when the nozzle is placed in the retreat position, set the opening of the first valve from the fourth opening to the second opening and the second valve from the closed state to the open state, so as to set the nozzle in a preparatory discharging treatment liquid return state, wherein the preparatory discharging treatment liquid return state is a state in which the treatment liquid flows from the supply pipe toward the return pipe. The control unit may also, before the treatment liquid inside the supply pipe is exhausted in the prepared state of discharging the treatment liquid, move the nozzle from the retreat position to the treatment position, set the opening of the first valve from the second opening to the first opening, and set the second valve from the open state to the closed state, so as to set it to the discharging state.

本發明之第二態樣之基板處理方法,其係藉由自噴嘴朝基板供給處理液而對前述基板進行處理者。本發明之第二態樣之基板處理方法,其包含有以下之步驟:藉由將設於送液配管之第一閥設為開放狀態,且將設於與前述送液配管連接之返回配管之第二閥設為關閉狀態,使前述處理液自前述送液配管朝連接於前述送液配管及前述返回配管、與前述噴嘴之供給配管流通,而自前述噴嘴吐出前述處理液對前述基板進行處理之步驟;及藉由將前述第二閥自前述關閉狀態設為開放狀態,使前述處理液自前述供給配管朝前述返回配管流通之步驟。The second aspect of the substrate processing method of the present invention is to process the substrate by supplying a processing liquid from a nozzle to the substrate. The second aspect of the substrate processing method of the present invention includes the following steps: by setting a first valve provided on a liquid supply pipe to an open state and setting a second valve provided on a return pipe connected to the liquid supply pipe to a closed state, the processing liquid is allowed to flow from the liquid supply pipe to a supply pipe connected to the liquid supply pipe and the return pipe and to the nozzle, and the processing liquid is ejected from the nozzle to process the substrate; and by setting the second valve from the closed state to an open state, the processing liquid is allowed to flow from the supply pipe to the return pipe.

於本發明之第二態樣之基板處理方法中,亦可執行藉由將前述第一閥之開度設為第一開度且將前述第二閥設為關閉狀態,而自前述噴嘴吐出前述處理液之步驟,且執行藉由將前述第一閥之開度設為小於前述第一開度之第二開度且將前述第二閥設為開放狀態,而使前述處理液朝向前述返回配管流通之步驟。In the substrate processing method of the second aspect of the present invention, a step of discharging the processing liquid from the nozzle by setting the opening of the first valve to a first opening and setting the second valve to a closed state can also be performed, and a step of allowing the processing liquid to flow toward the return pipe by setting the opening of the first valve to a second opening smaller than the first opening and setting the second valve to an open state can be performed.

本發明之第二態樣之基板處理方法,亦可更包含以下之步驟:藉由將前述第一閥之開度自前述第二開度設為小於前述第二開度之第三開度,且將前述第二閥保持於前述開放狀態,而使較自前述噴嘴吐出前述處理液之步驟為少量之前述處理液自前述送液配管朝向前述返回配管流通之步驟。The substrate processing method of the second aspect of the present invention may further include the following steps: by setting the opening of the aforementioned first valve from the aforementioned second opening to a third opening smaller than the aforementioned second opening, and keeping the aforementioned second valve in the aforementioned open state, a step of discharging a smaller amount of the aforementioned processing liquid from the aforementioned nozzle and a step of allowing the aforementioned processing liquid to flow from the aforementioned liquid supply pipe toward the aforementioned return pipe.

本發明之第二態樣之基板處理方法,亦可更包含以下之步驟:於將前述噴嘴配置於離開前述基板之上方的退避位置之狀態下,藉由將前述第一閥之開度自前述第三開度設為小於前述第一開度且大於前述第二開度之第四開度,且將前述第二閥自前述開放狀態設為前述關閉狀態,而使前述處理液自前述送液配管朝向前述供給配管流通,自前述噴嘴吐出前述處理液之步驟;於將前述噴嘴配置於前述退避位置之狀態下,藉由將前述第一閥之開度自前述第四開度設為前述第二開度,且將前述第二閥自前述關閉狀態設為前述開放狀態,而使前述處理液自前述供給配管朝向前述返回配管流通之步驟;及於前述供給配管內部之前述處理液耗盡之前,藉由使前述噴嘴自前述退避位置朝向前述基板之上方的處理位置移動,且將前述第一閥之開度自前述第二開度設為前述第一開度,將前述第二閥自前述開放狀態設為前述關閉狀態,而自前述噴嘴吐出前述處理液對前述基板進行處理之步驟。 (對照先前技術之功效) The substrate processing method of the second aspect of the present invention may further include the following steps: when the nozzle is arranged in a retreat position away from the top of the substrate, the opening of the first valve is set from the third opening to a fourth opening that is smaller than the first opening and larger than the second opening, and the second valve is set from the open state to the closed state, so that the processing liquid flows from the liquid delivery pipe toward the supply pipe, and the processing liquid is ejected from the nozzle; when the nozzle is arranged in the retreat position, the opening of the first valve is set to the fourth opening that is smaller than the first opening and larger than the second opening, and the second valve is set from the open state to the closed state. The fourth opening is set to the second opening, and the second valve is set from the closed state to the open state, so that the processing liquid flows from the supply pipe toward the return pipe; and before the processing liquid in the supply pipe is exhausted, the nozzle is moved from the retreat position toward the processing position above the substrate, and the opening of the first valve is set from the second opening to the first opening, and the second valve is set from the open state to the closed state, so that the processing liquid is ejected from the nozzle to process the substrate. (Compared with the effect of the prior art)

根據本發明,可提供一種基板處理裝置及基板處理方法,其可於基板處理裝置未進行基板處理之狀態下,抑制處理液自噴嘴滴落。According to the present invention, a substrate processing apparatus and a substrate processing method can be provided, which can suppress the dripping of processing liquid from the nozzle when the substrate processing apparatus is not processing the substrate.

以下,參照圖式,對於本發明之實施形態進行說明。再者,於圖中,對相同或同等部分被賦予相同之元件符號且省略其重複說明。Hereinafter, the embodiments of the present invention will be described with reference to the drawings. In addition, in the drawings, the same or equivalent parts are given the same element symbols and their repeated descriptions are omitted.

(第1實施形態) 參照圖1,對於本發明第1實施形態之基板處理裝置100進行說明。圖1為示意表示本發明第1實施形態之基板處理裝置100之構成的俯視圖。 (First embodiment) Referring to FIG. 1 , a substrate processing apparatus 100 according to the first embodiment of the present invention will be described. FIG. 1 is a top view schematically showing the structure of the substrate processing apparatus 100 according to the first embodiment of the present invention.

如圖1所示,基板處理裝置100係一片一片地處理基板W之單片式裝置。As shown in FIG. 1 , the substrate processing apparatus 100 is a single-wafer apparatus that processes substrates W one by one.

基板W例如為矽晶圓、樹脂基板或玻璃、石英基板。於本實施形態中,作為基板W,例示了大致圓盤狀之半導體基板。但是,基板W之形狀並未特別受限制。基板W例如亦可形成為矩形。The substrate W is, for example, a silicon wafer, a resin substrate, or a glass or quartz substrate. In this embodiment, a substantially disk-shaped semiconductor substrate is exemplified as the substrate W. However, the shape of the substrate W is not particularly limited. The substrate W may also be formed into a rectangular shape, for example.

基板處理裝置100具備有:複數個裝載埠LP、複數個處理單元1、記憶部2、及控制部3。The substrate processing apparatus 100 includes a plurality of loading ports LP, a plurality of processing units 1, a memory unit 2, and a control unit 3.

裝載埠LP對收容基板W之基板收容器C進行保持。處理單元1以處理流體對自裝載埠LP搬送來的基板W進行處理。處理流體係指例如處理液或處理氣體。The loading port LP holds a substrate container C that accommodates a substrate W. The processing unit 1 processes the substrate W transferred from the loading port LP with a processing fluid. The processing fluid is, for example, a processing liquid or a processing gas.

記憶部2包含有諸如唯讀記憶體ROM(Read Only Memory)、及隨機存取記憶體RAM(Random Access Memory)之主記憶裝置(例如,半導體記憶體),且亦可進一步包含有輔助記憶裝置(例如,硬碟驅動器)。主記憶裝置、及/或輔助記憶裝置係記憶由控制部3執行之各種電腦程式。The memory unit 2 includes a main memory device (e.g., semiconductor memory) such as a read-only memory ROM (Read Only Memory) and a random access memory RAM (Random Access Memory), and may further include an auxiliary memory device (e.g., a hard disk drive). The main memory device and/or the auxiliary memory device store various computer programs executed by the control unit 3.

控制部3包含有諸如CPU(Central Processing Unit)、及MPU(Micro Processing Unit)之處理器。控制部3係控制基板處理裝置100之各要件。The control unit 3 includes a processor such as a CPU (Central Processing Unit) and an MPU (Micro Processing Unit). The control unit 3 controls various elements of the substrate processing apparatus 100.

基板處理裝置100還具備有搬送機器人。搬送機器人係於裝載埠LP與處理單元1之間搬送基板W。搬送機器人具備有索引機器人IR(indexer robot)及中央機器人CR(center robot)。索引機器人IR係於裝載埠LP與中央機器人CR之間搬送基板W。中央機器人CR係於索引機器人IR與處理單元1之間搬送基板W。索引機器人IR及中央機器人CR分別具備有支撐基板W之手部。The substrate processing apparatus 100 also has a transfer robot. The transfer robot transfers the substrate W between the loading port LP and the processing unit 1. The transfer robot has an indexer robot IR and a center robot CR. The indexer robot IR transfers the substrate W between the loading port LP and the center robot CR. The center robot CR transfers the substrate W between the indexer robot IR and the processing unit 1. The indexer robot IR and the center robot CR each have a hand for supporting the substrate W.

基板處理裝置100還具備有複數個流體盒4及藥液貯存櫃5。複數個流體盒4及處理單元1係被配置於基板處理裝置100之框體100a內部。藥液貯存櫃5係被配置於基板處理裝置100之框體100a外部。藥液貯存櫃5亦可被配置於基板處理裝置100之側面。此外,藥液貯存櫃5亦可被配置於設置有基板處理裝置100之無塵室的下面(地下)。The substrate processing apparatus 100 also includes a plurality of fluid boxes 4 and a chemical solution storage cabinet 5. The plurality of fluid boxes 4 and the processing unit 1 are arranged inside the frame 100a of the substrate processing apparatus 100. The chemical solution storage cabinet 5 is arranged outside the frame 100a of the substrate processing apparatus 100. The chemical solution storage cabinet 5 may also be arranged on the side of the substrate processing apparatus 100. In addition, the chemical solution storage cabinet 5 may also be arranged below (underground) the clean room where the substrate processing apparatus 100 is installed.

複數個處理單元1被構成為上下堆疊之塔TW。塔TW被設置有複數個。複數個塔TW被配置為於俯視下圍繞中央機器人CR。The plurality of processing units 1 are configured as a tower TW stacked up and down. A plurality of towers TW are provided. The plurality of towers TW are arranged to surround the central robot CR in a plan view.

於本實施形態中,於塔TW中堆疊有3個處理單元1。此外,設置有4個塔TW。再者,構成塔TW之處理單元1之個數無特別限制。此外,塔TW之個數亦無特別限制。In this embodiment, three processing units 1 are stacked in the tower TW. In addition, four towers TW are provided. Furthermore, the number of processing units 1 constituting the tower TW is not particularly limited. In addition, the number of towers TW is also not particularly limited.

複數個流體盒4分別與複數個塔TW相對應。藥液貯存櫃5內之藥液經由流體盒4供給至與流體盒4相對應之塔TW。其結果,對包含於塔TW內之全部處理單元1供給藥液。The plurality of fluid boxes 4 correspond to the plurality of towers TW, respectively. The chemical solution in the chemical solution storage tank 5 is supplied to the tower TW corresponding to the fluid box 4 via the fluid box 4. As a result, the chemical solution is supplied to all the processing units 1 included in the tower TW.

以下參照圖2,對處理單元1進行說明。圖2為示意表示處理單元1之構成的側視圖。The processing unit 1 will be described below with reference to Fig. 2. Fig. 2 is a side view schematically showing the structure of the processing unit 1.

如圖2所示,處理單元1具備有:腔室6、旋轉卡盤10、及杯體14。As shown in FIG. 2 , the processing unit 1 includes a chamber 6 , a spin chuck 10 , and a cup 14 .

腔室6具備有:隔壁8、閘門9、及FFU7 (風扇過濾器單元) 。隔壁8具有中空之形狀。於隔壁8設置有搬送口。閘門9係開閉搬送口。FFU7係於腔室6內形成清潔空氣之降流。潔淨空氣係藉由過濾器過濾後之空氣。The chamber 6 is provided with a partition wall 8, a gate 9, and a FFU 7 (fan filter unit). The partition wall 8 is hollow. A transfer port is provided in the partition wall 8. The gate 9 is used to open and close the transfer port. The FFU 7 forms a downflow of clean air in the chamber 6. The clean air is the air filtered by the filter.

中央機器人CR通過搬送口將基板W搬入至腔室6,且通過搬送口自腔室6搬出基板W。The central robot CR carries the substrate W into the chamber 6 through the transfer port, and carries the substrate W out of the chamber 6 through the transfer port.

旋轉卡盤10係被配置於腔室6內。旋轉卡盤10一面水平保持基板W一面繞旋轉軸線A1旋轉。旋轉軸線A1係通過基板W中央部之鉛垂的虛擬軸。The spin chuck 10 is disposed in the chamber 6. The spin chuck 10 rotates around a rotation axis A1 while holding the substrate W horizontally. The rotation axis A1 is a vertical virtual axis passing through the center of the substrate W.

旋轉卡盤10具備有:複數個卡盤銷11、旋轉座12、旋轉馬達13、杯體14、及升降單元15。The rotary chuck 10 includes a plurality of chuck pins 11 , a rotary seat 12 , a rotary motor 13 , a cup body 14 , and a lifting unit 15 .

旋轉座12係圓盤狀構件。複數個卡盤銷11係於旋轉座12上以水平之姿勢保持基板W。旋轉馬達13藉由使複數個卡盤銷11旋轉,而使基板W繞旋轉軸線A1旋轉。The rotating base 12 is a disc-shaped member. A plurality of chuck pins 11 hold the substrate W in a horizontal position on the rotating base 12. The rotating motor 13 rotates the plurality of chuck pins 11 to rotate the substrate W around the rotation axis A1.

本實施形態之旋轉卡盤10係使複數個卡盤銷11接觸至基板W外周面之夾持式卡盤。然而,本發明不受限於此。旋轉卡盤10亦可為真空式之吸盤。真空式之吸盤係藉由將非元件形成面即基板W之背面(下表面)吸附於旋轉座12之上表面,而水平保持基板W。The rotary chuck 10 of this embodiment is a clamping chuck that makes a plurality of chuck pins 11 contact the outer peripheral surface of the substrate W. However, the present invention is not limited thereto. The rotary chuck 10 may also be a vacuum suction cup. The vacuum suction cup holds the substrate W horizontally by adsorbing the non-component forming surface, i.e., the back surface (lower surface) of the substrate W, onto the upper surface of the rotary seat 12.

杯體14承接來自基板W排出之處理液。杯體14具備有:傾斜部14a、導引部14b、及受液部14c。傾斜部14a係朝向旋轉軸線A1於斜上方延伸之筒狀構件。傾斜部14a包含有圓環狀之上端,該圓環狀之上端具有較基板W及旋轉座12大之內徑。傾斜部14a之上端相當於杯體14之上端。於俯視下,杯體14之上端圍繞基板W及旋轉座12。導引部14b係自傾斜部14a之下端部(外端部)朝下方延伸之圓筒狀構件。受液部14c係位於導引部14b之下部,且形成朝上方開放之環狀溝槽。The cup body 14 receives the processing liquid discharged from the substrate W. The cup body 14 includes: an inclined portion 14a, a guide portion 14b, and a liquid receiving portion 14c. The inclined portion 14a is a cylindrical component extending obliquely upward toward the rotation axis A1. The inclined portion 14a includes an annular upper end, and the annular upper end has an inner diameter larger than the substrate W and the rotating seat 12. The upper end of the inclined portion 14a is equivalent to the upper end of the cup body 14. In a top view, the upper end of the cup body 14 surrounds the substrate W and the rotating seat 12. The guide portion 14b is a cylindrical component extending downward from the lower end (outer end) of the inclined portion 14a. The liquid receiving portion 14c is located at the lower part of the guide portion 14b and forms an annular groove open upward.

升降單元15使杯體14於上升位置與下降位置之間升降。當杯體14位於上升位置時,杯體14之上端位於較旋轉卡盤10更靠上方之位置。當杯體14位於下降位置時,杯體14之上端位於較旋轉卡盤10更靠下方之位置。The lifting unit 15 lifts the cup body 14 between the raised position and the lowered position. When the cup body 14 is in the raised position, the upper end of the cup body 14 is located above the rotary chuck 10. When the cup body 14 is in the lowered position, the upper end of the cup body 14 is located below the rotary chuck 10.

於朝基板W供給處理液時,杯體14位於上升位置。自基板W朝外側飛散之處理液,藉由傾斜部14a承接後經由導引部14b收集至受液部14c內。When the processing liquid is supplied to the substrate W, the cup body 14 is in the raised position. The processing liquid scattered outward from the substrate W is received by the inclined portion 14a and collected in the liquid receiving portion 14c through the guide portion 14b.

處理單元1還具備有:清洗液噴嘴16、清洗液配管17、及清洗液閥18。清洗液噴嘴16朝向保持於旋轉卡盤10之基板W吐出清洗液。清洗液噴嘴16連接於清洗液配管17。於清洗液配管17插入安裝有清洗液閥18。The processing unit 1 further includes a cleaning liquid nozzle 16, a cleaning liquid pipe 17, and a cleaning liquid valve 18. The cleaning liquid nozzle 16 discharges cleaning liquid toward the substrate W held by the spin chuck 10. The cleaning liquid nozzle 16 is connected to the cleaning liquid pipe 17. The cleaning liquid valve 18 is inserted and installed in the cleaning liquid pipe 17.

若將清洗液閥18開放,則自清洗液配管17將清洗液供給至清洗液噴嘴16。然後,自清洗液噴嘴16吐出清洗液。清洗液例如為純水(去離子水:Deionized Water)。清洗液不限於純水,亦可為碳酸水、電解離子水、氫水、臭氧水、及/或稀釋濃度之鹽酸水。稀釋濃度例如為10ppm以上且100ppm以下之濃度。When the cleaning liquid valve 18 is opened, the cleaning liquid is supplied from the cleaning liquid pipe 17 to the cleaning liquid nozzle 16. Then, the cleaning liquid is ejected from the cleaning liquid nozzle 16. The cleaning liquid is, for example, pure water (deionized water). The cleaning liquid is not limited to pure water, and may also be carbonated water, electrolytic ion water, hydrogen water, ozone water, and/or hydrochloric acid water of a diluted concentration. The diluted concentration is, for example, a concentration of 10 ppm or more and 100 ppm or less.

處理單元1還具備有:藥液噴嘴21、及噴嘴移動單元22。藥液噴嘴21朝向保持於旋轉卡盤10之基板W吐出藥液。噴嘴移動單元22使藥液噴嘴21於處理位置與退避位置之間移動。處理位置表示藥液噴嘴21朝向基板W吐出藥液之位置。此外,處理位置係基板W之上方的位置。退避位置表示藥液噴嘴21離開基板W的位置。此外,退避位置係離開基板W之上方的位置。噴嘴移動單元22例如藉由使藥液噴嘴21繞擺動軸線A2旋轉而使藥液噴嘴21移動。擺動軸線A2係位於杯體14周邊之鉛垂的虛擬軸。再者,藥液噴嘴21係本發明「噴嘴」之一例。此外,噴嘴移動單元22係本發明「移動機構」之一例。The processing unit 1 also includes: a chemical liquid nozzle 21, and a nozzle moving unit 22. The chemical liquid nozzle 21 discharges chemical liquid toward the substrate W held on the rotary chuck 10. The nozzle moving unit 22 moves the chemical liquid nozzle 21 between a processing position and a retreat position. The processing position indicates a position where the chemical liquid nozzle 21 discharges chemical liquid toward the substrate W. In addition, the processing position is a position above the substrate W. The retreat position indicates a position where the chemical liquid nozzle 21 leaves the substrate W. In addition, the retreat position is a position away from the top of the substrate W. The nozzle moving unit 22 moves the chemical liquid nozzle 21, for example, by rotating the chemical liquid nozzle 21 around a swing axis A2. The swing axis A2 is a vertical virtual axis located at the periphery of the cup body 14. Furthermore, the liquid medicine nozzle 21 is an example of the "nozzle" of the present invention. In addition, the nozzle moving unit 22 is an example of the "moving mechanism" of the present invention.

基板處理裝置100還具備有藥液供給裝置30。藥液供給裝置30將藥液供給至處理單元1之藥液噴嘴21。供給至藥液噴嘴21之藥液例如包含有異丙醇(isopropyl alcohol:IPA)。藥液係本發明「處理液」之一例。The substrate processing apparatus 100 further includes a chemical solution supply device 30. The chemical solution supply device 30 supplies chemical solution to the chemical solution nozzle 21 of the processing unit 1. The chemical solution supplied to the chemical solution nozzle 21 contains, for example, isopropyl alcohol (IPA). The chemical solution is an example of the "processing solution" of the present invention.

參照圖3,對於藉由基板處理裝置100對基板W執行處理之一例進行說明。圖3為表示藉由基板處理裝置100對基板W執行處理之一例的流程圖。An example of processing performed on a substrate W by the substrate processing apparatus 100 will be described with reference to Fig. 3. Fig. 3 is a flowchart showing an example of processing performed on a substrate W by the substrate processing apparatus 100.

如圖3所示,於步驟S1中,控制部3進行將基板W搬送至腔室6內之搬送處理。以下,對於搬送處理之程序進行說明。As shown in Fig. 3, in step S1, the control unit 3 performs a transfer process of transferring the substrate W into the chamber 6. The following describes the procedure of the transfer process.

首先,在藥液噴嘴21自基板W之上方退避之狀態下,中央機器人CR一面以手部支撐基板W,一面使手部進入腔室6內。然後,中央機器人CR將以手部支撐之基板W載置於旋轉卡盤10上。其結果,將基板W搬送至旋轉卡盤10上。First, in a state where the chemical liquid nozzle 21 is retracted from above the substrate W, the central robot CR supports the substrate W with its hand while entering the chamber 6. Then, the central robot CR places the substrate W supported by its hand on the rotary chuck 10. As a result, the substrate W is transferred to the rotary chuck 10.

當基板W被搬送至旋轉卡盤10上時,則卡盤銷11夾持基板W。然後,旋轉馬達13使卡盤銷11旋轉。其結果,基板W旋轉。當基板W旋轉時,則使處理轉移至步驟S2。When the substrate W is transferred onto the rotary chuck 10, the chuck pin 11 clamps the substrate W. Then, the rotary motor 13 rotates the chuck pin 11. As a result, the substrate W rotates. When the substrate W rotates, the process is transferred to step S2.

於步驟S2中,控制部3進行對基板W供給藥液之藥液供給處理。以下,對於藥液供給處理之程序進行說明。In step S2, the control unit 3 performs a chemical liquid supply process for supplying a chemical liquid to the substrate W. The procedure of the chemical liquid supply process will be described below.

首先,噴嘴移動單元22使藥液噴嘴21移動至處理位置。然後,升降單元15使杯體14上升至上升位置。然後,藥液供給裝置30開始朝藥液噴嘴21供給藥液。其結果,藥液噴嘴21朝向基板W吐出藥液。First, the nozzle moving unit 22 moves the liquid chemical nozzle 21 to the processing position. Then, the lifting unit 15 raises the cup body 14 to the raised position. Then, the liquid chemical supply device 30 starts supplying liquid chemical to the liquid chemical nozzle 21. As a result, the liquid chemical nozzle 21 discharges liquid chemical toward the substrate W.

自藥液噴嘴21吐出之藥液係落液於基板W之上表面後,一面沿著旋轉中之基板W上表面,一面朝向基板W外側流動。其結果,以覆蓋基板W上表面整個區域之方式被形成藥液之液膜。再者,於藥液噴嘴21吐出藥液時,噴嘴移動單元22可使藥液噴嘴21靜止,亦可使其於基板W上方進行掃描。The liquid chemical ejected from the liquid chemical nozzle 21 falls on the upper surface of the substrate W, and then flows along the upper surface of the rotating substrate W and toward the outer side of the substrate W. As a result, a liquid chemical film is formed in a manner covering the entire upper surface of the substrate W. Furthermore, when the liquid chemical nozzle 21 ejects the liquid chemical, the nozzle moving unit 22 can make the liquid chemical nozzle 21 stationary or scan above the substrate W.

當朝藥液噴嘴21開始供給藥液起經過既定時間,則停止朝藥液噴嘴21供給藥液。然後,噴嘴移動單元22使藥液噴嘴21移動至退避位置。當藥液噴嘴21到達退避位置時,則使處理轉移至步驟S3。When a predetermined time has passed since the start of the supply of the liquid medicine to the liquid medicine nozzle 21, the supply of the liquid medicine to the liquid medicine nozzle 21 is stopped. Then, the nozzle moving unit 22 moves the liquid medicine nozzle 21 to the retreat position. When the liquid medicine nozzle 21 reaches the retreat position, the process is transferred to step S3.

於步驟S3中,控制部3進行對基板W供給清洗液之一例即純水之清洗液供給處理。以下,對於清洗液供給處理之程序進行說明。In step S3, the control unit 3 performs a cleaning liquid supply process of supplying pure water, which is an example of a cleaning liquid, to the substrate W. The procedure of the cleaning liquid supply process is described below.

首先,將清洗液閥18開放,清洗液噴嘴16開始吐出純水。落液於基板W上表面之純水係一面沿著旋轉中之基板W上表面,一面朝向基板W外側流動。基板W上之藥液被自清洗液噴嘴16吐出之純水沖洗流掉。其結果,於基板W之上表面整個區域形成純水之液膜。First, the cleaning liquid valve 18 is opened, and the cleaning liquid nozzle 16 starts to discharge pure water. The pure water falling on the upper surface of the substrate W flows along the upper surface of the rotating substrate W and toward the outer side of the substrate W. The chemical solution on the substrate W is washed away by the pure water discharged from the cleaning liquid nozzle 16. As a result, a pure water liquid film is formed on the entire upper surface of the substrate W.

當自清洗液閥18開放起經過既定時間,則關閉清洗液閥18,停止朝基板W吐出純水。當停止朝基板W吐出純水時,則使處理轉移至步驟S4。When a predetermined time has passed since the cleaning liquid valve 18 was opened, the cleaning liquid valve 18 is closed to stop the discharge of pure water toward the substrate W. When the discharge of pure water toward the substrate W is stopped, the process is transferred to step S4.

於步驟S4中,控制部3進行藉由基板W之旋轉使基板W乾燥之乾燥處理。以下,對於乾燥處理之程序進行說明。In step S4, the control unit 3 performs a drying process to dry the substrate W by rotating the substrate W. The following describes the procedure of the drying process.

首先,旋轉馬達13使基板W以較藥液供給處理時基板W之旋轉速度、及清洗液供給處理時基板W之旋轉速度更大之旋轉速度(例如,數千rpm)高速旋轉。其結果,液體自基板W被除去,而對基板W進行乾燥。First, the rotary motor 13 rotates the substrate W at a higher speed (for example, several thousand rpm) than the substrate W during the chemical solution supply process and the cleaning solution supply process. As a result, the liquid is removed from the substrate W, and the substrate W is dried.

當基板W之高速旋轉開始起經過既定時間,則旋轉馬達13使基板W之旋轉停止。當基板W之旋轉停止時,則使處理轉移至步驟S5。When a predetermined time has passed since the high-speed rotation of the substrate W started, the rotation motor 13 stops the rotation of the substrate W. When the rotation of the substrate W stops, the process is transferred to step S5.

於步驟S5中,控制部3進行將基板W自腔室6搬出之搬出處理。以下,對於搬出處理之程序進行說明。In step S5, the control unit 3 performs a carry-out process for carrying the substrate W out of the chamber 6. The following describes the procedure of the carry-out process.

首先,升降單元15使杯體14下降至下部位置。然後,中央機器人CR使手部進入腔室6內。然後,複數個卡盤銷11解除對基板W之夾持。First, the lifting unit 15 lowers the cup 14 to the lower position. Then, the central robot CR puts its hand into the chamber 6. Then, the plurality of chuck pins 11 release the clamping of the substrate W.

於複數個卡盤銷11解除了對基板W之夾持後,中央機器人CR以手部支撐旋轉卡盤10上之基板W。然後,中央機器人CR一面以手部支撐基板W,一面使手部自腔室6之內部退避。其結果,處理後之基板W被自腔室6搬出。After the plurality of chuck pins 11 release the substrate W, the central robot CR supports the substrate W on the rotary chuck 10 with its hand. Then, the central robot CR withdraws its hand from the chamber 6 while supporting the substrate W with its hand. As a result, the processed substrate W is carried out of the chamber 6.

當自腔室6搬出處理完畢之基板W時,則結束步驟S5所示之搬出處理。When the processed substrate W is unloaded from the chamber 6, the unloading process shown in step S5 is terminated.

藉由重複進行自步驟S1至步驟S5所示之處理,對搬送至基板處理裝置100之複數個基板W一片一片地進行處理。By repeatedly performing the processes shown in step S1 to step S5, the plurality of substrates W transported to the substrate processing apparatus 100 are processed one by one.

接著,參照圖4,對藥液供給裝置30進行說明。圖4為表示藥液供給裝置30之構成的示意圖。Next, the chemical liquid supply device 30 will be described with reference to Fig. 4. Fig. 4 is a schematic diagram showing the structure of the chemical liquid supply device 30.

藥液供給裝置30設置有複數個。複數個藥液供給裝置30分別與複數個塔TW(參照圖1)相對應。藥液供給裝置30對構成相對應之塔TW的全部處理單元1供給藥液。A plurality of chemical solution supply devices 30 are provided. The plurality of chemical solution supply devices 30 correspond to the plurality of towers TW (see FIG. 1 ), respectively. The chemical solution supply device 30 supplies chemical solution to all the processing units 1 constituting the corresponding tower TW.

於本實施形態中,一個塔TW由3個處理單元1構成。因此,一個藥液供給裝置30將藥液供給至3個處理單元1。In the present embodiment, one tower TW is composed of three processing units 1. Therefore, one chemical solution supply device 30 supplies chemical solution to the three processing units 1.

如圖4所示,藥液供給裝置30具備有:供給槽31、循環配管32、循環泵33、循環過濾器34、及循環加熱器35。As shown in FIG. 4 , the chemical solution supply device 30 includes a supply tank 31 , a circulation pipe 32 , a circulation pump 33 , a circulation filter 34 , and a circulation heater 35 .

供給槽31儲存藥液。循環配管32係管狀構件。於循環配管32內,形成有用於藥液循環之循環路徑。循環配管32具有上游側端部32a及下游側端部32b。循環配管32係與供給槽31連通。具體而言,循環配管32之上游側端部32a及下游側端部32b係與供給槽31相連通。The supply tank 31 stores the chemical solution. The circulation pipe 32 is a tubular component. A circulation path for circulation of the chemical solution is formed in the circulation pipe 32. The circulation pipe 32 has an upstream side end 32a and a downstream side end 32b. The circulation pipe 32 is connected to the supply tank 31. Specifically, the upstream side end 32a and the downstream side end 32b of the circulation pipe 32 are connected to the supply tank 31.

循環泵33係將供給槽31內之藥液輸送至循環配管32。當循環泵33動作時,則供給槽31內之藥液被輸送至循環配管32之上游側端部32a。被輸送至上游側端部32a之藥液於循環配管32內被輸送,且自下游側端部32b被排出至供給槽31。藉由循環泵33之持續動作,藥液自上游側端部32a朝向下游側端部32b於循環配管32內持續流動。其結果,藥液於循環配管32內循環。The circulation pump 33 transports the liquid medicine in the supply tank 31 to the circulation pipe 32. When the circulation pump 33 is operated, the liquid medicine in the supply tank 31 is transported to the upstream side end 32a of the circulation pipe 32. The liquid medicine transported to the upstream side end 32a is transported in the circulation pipe 32 and discharged from the downstream side end 32b to the supply tank 31. With the continuous operation of the circulation pump 33, the liquid medicine continues to flow in the circulation pipe 32 from the upstream side end 32a to the downstream side end 32b. As a result, the liquid medicine circulates in the circulation pipe 32.

循環過濾器34自於循環配管32內循環之藥液去除如粉塵之異物。循環加熱器35藉由加熱藥液而被調整藥液之溫度。循環加熱器35將藥液之溫度被保持於例如高於室溫之固定溫度(例如,60°C)。於循環配管32內循環之藥液之溫度係藉由循環加熱器35保持於固定之溫度。The circulation filter 34 removes foreign matter such as dust from the chemical liquid circulating in the circulation pipe 32. The circulation heater 35 adjusts the temperature of the chemical liquid by heating the chemical liquid. The circulation heater 35 maintains the temperature of the chemical liquid at a fixed temperature (e.g., 60° C.) higher than room temperature. The temperature of the chemical liquid circulating in the circulation pipe 32 is maintained at a fixed temperature by the circulation heater 35.

循環泵33、循環過濾器34及循環加熱器35係設置於循環配管32。The circulation pump 33 , the circulation filter 34 , and the circulation heater 35 are installed in the circulation pipe 32 .

供給槽31、循環泵33、循環過濾器34及循環加熱器35係設置於藥液貯存櫃5內。The supply tank 31 , the circulation pump 33 , the circulation filter 34 and the circulation heater 35 are arranged in the chemical solution storage tank 5 .

亦可取代循環泵33而設置加壓裝置。加壓裝置藉由使供給槽31內之氣壓上升,而將供給槽31內之藥液送出至循環配管32。A pressurizing device may be provided instead of the circulation pump 33. The pressurizing device increases the air pressure in the supply tank 31 to deliver the chemical solution in the supply tank 31 to the circulation pipe 32.

藥液供給裝置30還具備有複數個供給機構40。於本實施形態中,設置有3個供給機構40。The chemical solution supply device 30 further includes a plurality of supply mechanisms 40. In the present embodiment, three supply mechanisms 40 are provided.

複數個供給機構40之各者係與循環配管32相連通。於循環配管32內循環之藥液被供給至複數個供給機構40之各者。Each of the plurality of supply mechanisms 40 is connected to the circulation pipe 32. The chemical solution circulating in the circulation pipe 32 is supplied to each of the plurality of supply mechanisms 40.

複數個供給機構40係與複數個處理單元1相對應。供給機構40將藥液供給至相對應之處理單元1。供給至處理單元1之藥液自藥液噴嘴21吐出。The plurality of supply mechanisms 40 correspond to the plurality of processing units 1. The supply mechanism 40 supplies the chemical solution to the corresponding processing unit 1. The chemical solution supplied to the processing unit 1 is ejected from the chemical solution nozzle 21.

藥液供給裝置30還具備有:回收槽51、回收配管52、回收泵53、及回收過濾器54。再者,回收槽51係本發明「收容槽」之一例。The chemical solution supply device 30 further includes a recovery tank 51, a recovery pipe 52, a recovery pump 53, and a recovery filter 54. The recovery tank 51 is an example of a "storage tank" of the present invention.

回收槽51係與複數個供給機構40之各者相連通。回收槽51收容未自藥液噴嘴21吐出而通過複數個供給機構40之各者的藥液。於回收槽51上表面形成有貫通孔51a。藉此,即使藥液與氣體以混合之狀態自供給機構40被回收至回收槽51,亦可自貫通孔51a將氣體排出至外部。即,回收槽51係作為將氣體與液體分離之氣液分離裝置而發揮功能。藉此,其可抑制混合有氣體之藥液自回收槽51供給至供給槽31。The recovery tank 51 is connected to each of the plurality of supply mechanisms 40. The recovery tank 51 receives the liquid medicine that has not been ejected from the liquid medicine nozzle 21 but has passed through each of the plurality of supply mechanisms 40. A through hole 51a is formed on the upper surface of the recovery tank 51. Thus, even if the liquid medicine and the gas are recovered from the supply mechanism 40 to the recovery tank 51 in a mixed state, the gas can be discharged to the outside from the through hole 51a. That is, the recovery tank 51 functions as a gas-liquid separation device that separates the gas from the liquid. Thus, it can inhibit the liquid medicine mixed with the gas from being supplied to the supply tank 31 from the recovery tank 51.

回收配管52係管狀構件。回收配管52將回收槽51內之藥液朝供給槽31導引。回收配管52具備有:上游側端部52a、及下游側端部52b。上游側端部52a連通至回收槽51。下游側端部52b連通至供給槽31。The recovery pipe 52 is a tubular member. The recovery pipe 52 guides the chemical solution in the recovery tank 51 to the supply tank 31. The recovery pipe 52 has an upstream end portion 52a and a downstream end portion 52b. The upstream end portion 52a is connected to the recovery tank 51. The downstream end portion 52b is connected to the supply tank 31.

回收泵53被設置於回收配管52。回收泵53通過回收配管52將回收槽51內之藥液朝供給槽31壓送。回收過濾器54被設置於回收配管52。回收過濾器54自流動於回收配管52內之藥液去除異物。The recovery pump 53 is provided in the recovery pipe 52. The recovery pump 53 presses the chemical solution in the recovery tank 51 toward the supply tank 31 through the recovery pipe 52. The recovery filter 54 is provided in the recovery pipe 52. The recovery filter 54 removes foreign matter from the chemical solution flowing in the recovery pipe 52.

接著,參照圖5,對於供給機構40進行說明。圖5為表示供給機構40周邊之構成的示意圖。Next, the supply mechanism 40 will be described with reference to Fig. 5. Fig. 5 is a schematic diagram showing the structure of the supply mechanism 40 and its surroundings.

如圖5所示,供給機構40具有:送液配管41、分歧部42、供給配管43、及返回配管44。送液配管41、供給配管43及返回配管44係經由分歧部42相互連通。5 , the supply mechanism 40 includes a liquid supply pipe 41, a branch portion 42, a supply pipe 43, and a return pipe 44. The liquid supply pipe 41, the supply pipe 43, and the return pipe 44 are connected to each other via the branch portion 42.

送液配管41係管狀構件。送液配管41將循環於循環配管32內之藥液導引至循環配管32之外部。送液配管41具備有:上游側端部41a、及下游側端部41b。上游側端部41a連通至循環配管32。The liquid supply pipe 41 is a tubular member. The liquid supply pipe 41 guides the chemical solution circulating in the circulation pipe 32 to the outside of the circulation pipe 32. The liquid supply pipe 41 has an upstream end portion 41a and a downstream end portion 41b. The upstream end portion 41a is connected to the circulation pipe 32.

供給配管43係管狀構件。供給配管43將藉由送液配管41所導引之藥液導引至藥液噴嘴21。供給配管43具備有:上游側端部43a、及下游側端部43b。上游側端部43a係經由分歧部42而與送液配管41之下游側端部41b連通。下游側端部43b連通至藥液噴嘴21。The supply pipe 43 is a tubular member. The supply pipe 43 guides the liquid medicine guided by the liquid supply pipe 41 to the liquid medicine nozzle 21. The supply pipe 43 has an upstream side end 43a and a downstream side end 43b. The upstream side end 43a is connected to the downstream side end 41b of the liquid supply pipe 41 through the branching portion 42. The downstream side end 43b is connected to the liquid medicine nozzle 21.

返回配管44係管狀構件。返回配管44沿著與供給配管43不同之路徑,導引由送液配管41所導引之處理液。於本實施形態中,返回配管44將藥液導引至回收槽51。返回配管44具備有:上游側端部44a、及下游側端部44b。上游側端部44a經由分歧部42而分別與送液配管41之下游側端部41b及供給配管43之上游側端部43a連通。下游側端部44b連通至回收槽51。The return pipe 44 is a tubular member. The return pipe 44 guides the treatment liquid guided by the liquid delivery pipe 41 along a path different from that of the supply pipe 43. In the present embodiment, the return pipe 44 guides the liquid to the recovery tank 51. The return pipe 44 has an upstream side end 44a and a downstream side end 44b. The upstream side end 44a is connected to the downstream side end 41b of the liquid delivery pipe 41 and the upstream side end 43a of the supply pipe 43 through the branching portion 42. The downstream side end 44b is connected to the recovery tank 51.

供給機構40還具備有:流量計45、插入安裝構件46、第一閥47、及第二閥48。The supply mechanism 40 further includes a flow meter 45 , an insert mounting member 46 , a first valve 47 , and a second valve 48 .

流量計45檢測流動於送液配管41之藥液的流量。流量計45被設置於送液配管41。藥液的流量詳細表示流動於送液配管41內既定位置之每單位時間的藥液量。The flow meter 45 detects the flow rate of the chemical solution flowing in the liquid supply pipe 41. The flow meter 45 is provided in the liquid supply pipe 41. The flow rate of the chemical solution indicates in detail the amount of the chemical solution flowing in a predetermined position in the liquid supply pipe 41 per unit time.

插入安裝構件46被配置於分歧部42。插入安裝構件46係中空之構件。插入安裝構件46例如為射出器(ejector)。插入安裝構件46插入安裝於送液配管41、供給配管43、及返回配管44之間。送液配管41、供給配管43及返回配管44係經由插入安裝構件46相互連通。The insert mounting member 46 is disposed at the branching portion 42. The insert mounting member 46 is a hollow member. The insert mounting member 46 is, for example, an ejector. The insert mounting member 46 is inserted and mounted between the liquid supply pipe 41, the supply pipe 43, and the return pipe 44. The liquid supply pipe 41, the supply pipe 43, and the return pipe 44 are connected to each other via the insert mounting member 46.

第一閥47被設置於送液配管41。於本實施形態中,第一閥47可調整自送液配管41供給至分歧部42之藥液的流量。也就是說,第一閥47可調整開度。開度表示第一閥47開放之程度。第一閥47開度越小,則第一閥47開放之程度越小。The first valve 47 is provided on the liquid supply pipe 41. In the present embodiment, the first valve 47 can adjust the flow rate of the liquid supplied from the liquid supply pipe 41 to the branching portion 42. In other words, the first valve 47 can adjust the opening degree. The opening degree indicates the degree of opening of the first valve 47. The smaller the opening degree of the first valve 47, the smaller the degree of opening of the first valve 47.

第一閥47具備有如馬達之驅動源,且藉由驅動源之動力變更開度。圖1所示之控制部3藉由操作驅動源而控制第一閥47之開度。第一閥47例如為馬達針閥。再者,第一閥47亦可為例如隔膜閥等之馬達針閥以外的閥。The first valve 47 has a driving source such as a motor, and changes the opening by the power of the driving source. The control unit 3 shown in FIG1 controls the opening of the first valve 47 by operating the driving source. The first valve 47 is, for example, a motor needle valve. Furthermore, the first valve 47 may also be a valve other than the motor needle valve, such as a diaphragm valve.

第二閥48被設置於返回配管44。於本實施形態中,第二閥48對返回配管44進行開閉。第二閥48不能調整開度。亦即,第二閥48對返回配管44內藥液之通過及通過停止進行切換。The second valve 48 is provided in the return pipe 44. In the present embodiment, the second valve 48 opens and closes the return pipe 44. The second valve 48 cannot adjust the opening degree. That is, the second valve 48 switches between the passage and the stop of the passage of the chemical solution in the return pipe 44.

接著,參照圖4及圖5,對於藥液供給裝置30內藥液之流動進行說明。Next, the flow of the chemical solution in the chemical solution supply device 30 will be described with reference to FIG. 4 and FIG. 5 .

如圖4及圖5所示,當循環於循環配管32內之藥液自循環配管32流入送液配管41時,則藉由送液配管41被朝分歧部42導引。自分歧部42朝供給配管43供給之藥液係自藥液噴嘴21吐出。自分歧部42朝返回配管44供給之藥液係自返回配管44被朝回收槽51排出。朝回收槽51排出之藥液係通過回收配管52被供給至供給槽31。供給至供給槽31之藥液於循環配管32內循環。As shown in FIG. 4 and FIG. 5 , when the liquid medicine circulating in the circulation pipe 32 flows from the circulation pipe 32 into the liquid delivery pipe 41, it is guided toward the branch portion 42 through the liquid delivery pipe 41. The liquid medicine supplied from the branch portion 42 to the supply pipe 43 is ejected from the liquid medicine nozzle 21. The liquid medicine supplied from the branch portion 42 to the return pipe 44 is discharged from the return pipe 44 toward the recovery tank 51. The liquid medicine discharged to the recovery tank 51 is supplied to the supply tank 31 through the recovery pipe 52. The liquid medicine supplied to the supply tank 31 circulates in the circulation pipe 32.

接著,參照圖6,對於插入安裝構件46進行說明。圖6為插入安裝構件46的切斷端面圖。Next, the insert mounting member 46 will be described with reference to Fig. 6. Fig. 6 is a cut-away end view of the insert mounting member 46.

如圖6所示,插入安裝構件46具備有:第一構件46a、第二構件46b、及第三構件46c。第一構件46a、第二構件46b及第三構件46c係中空之構件,且相互連通。第一構件46a、第二構件46b及第三構件46c相互連通之空間部位係構成分歧部42。As shown in FIG6 , the insert mounting member 46 includes a first member 46a, a second member 46b, and a third member 46c. The first member 46a, the second member 46b, and the third member 46c are hollow members and are interconnected. The space where the first member 46a, the second member 46b, and the third member 46c are interconnected constitutes the divergence portion 42.

第一構件46a及第三構件46c係自分歧部42朝彼此相反之方向突出。第二構件46b係自分歧部42朝分別與第一構件46a及第三構件46c垂直之方向突出。再者,於圖5及圖6中,第一構件46a及第三構件46c配置為朝上下方向(沿X方向之方向)延伸,但第一構件46a及第三構件46c亦可配置為朝上下方向以外之方向(例如,大致水平方向)延伸。The first member 46a and the third member 46c protrude from the branch portion 42 in directions opposite to each other. The second member 46b protrudes from the branch portion 42 in directions perpendicular to the first member 46a and the third member 46c. Furthermore, in FIGS. 5 and 6 , the first member 46a and the third member 46c are arranged to extend in the up-down direction (in the direction along the X direction), but the first member 46a and the third member 46c may also be arranged to extend in a direction other than the up-down direction (for example, a substantially horizontal direction).

第一構件46a具有第一開口部4A。第一開口部4A連通第一構件46a之內部與外部。於第一開口部4A連結有送液配管41之下游側端部41b。The first member 46a has a first opening 4A. The first opening 4A connects the inside and the outside of the first member 46a. The downstream end 41b of the liquid supply pipe 41 is connected to the first opening 4A.

第二構件46b具有第二開口部4B。第二開口部4B連通第二構件46b之內部與外部。於第二開口部4B連結有供給配管43之上游側端部43a。The second member 46b has a second opening 4B. The second opening 4B connects the inside and the outside of the second member 46b. The upstream end 43a of the supply pipe 43 is connected to the second opening 4B.

第三構件46c具有第三開口部4C。第三開口部4C連通第三構件46c之內部與外部。於第三開口部4C連結有返回配管44之上游側端部44a。The third member 46c has a third opening 4C. The third opening 4C connects the inside and the outside of the third member 46c. The upstream end 44a of the return pipe 44 is connected to the third opening 4C.

流動於送液配管41之藥液經由第一開口部4A被供給至插入安裝構件46之內部。插入安裝構件46內部之藥液經由第二開口部4B被供給至供給配管43。插入安裝構件46內部之藥液經由第三開口部4C被供給至返回配管44。The liquid medicine flowing in the liquid delivery pipe 41 is supplied to the inside of the insertion mounting member 46 through the first opening 4A. The liquid medicine inside the insertion mounting member 46 is supplied to the supply pipe 43 through the second opening 4B. The liquid medicine inside the insertion mounting member 46 is supplied to the return pipe 44 through the third opening 4C.

藥液之流路具備有:分歧部42、第一流路R1、第二流路R2、及第三流路R3。分歧部42係送液配管41、供給配管43及返回配管44之分歧點。第一流路R1表示相對於分歧部42而位於送液配管41側藥液之流路。第一流路R1係位於分歧部42與送液配管41之上游側端部41a(參照圖5)之間。第二流路R2表示相對於分歧部42而位於供給配管43側藥液之流路。第二流路R2係位於分歧部42與供給配管43之下游側端部43b之間。第三流路R3表示相對於分歧部42而位於返回配管44側藥液之流路。第三流路R3係位於分歧部42與返回配管44之下游側端部44b之間。The flow path of the drug solution includes: a branching portion 42, a first flow path R1, a second flow path R2, and a third flow path R3. The branching portion 42 is a branch point of the liquid delivery piping 41, the supply piping 43, and the return piping 44. The first flow path R1 represents the flow path of the drug solution located on the liquid delivery piping 41 side relative to the branching portion 42. The first flow path R1 is located between the branching portion 42 and the upstream side end 41a (refer to Figure 5) of the liquid delivery piping 41. The second flow path R2 represents the flow path of the drug solution located on the supply piping 43 side relative to the branching portion 42. The second flow path R2 is located between the branching portion 42 and the downstream side end 43b of the supply piping 43. The third flow path R3 represents the flow path of the drug solution located on the return piping 44 side relative to the branching portion 42. The third flow path R3 is located between the branch portion 42 and the downstream end portion 44 b of the return pipe 44 .

供給機構40還具有節流部46d。節流部46d被配置於第一流路R1。節流部46d係作為對第一流路R1之流路面積進行縮減之孔(orifice)而發揮功能。流路面積係與藥液流動方向垂直之藥液流路的截面積。The supply mechanism 40 further includes a throttle portion 46d. The throttle portion 46d is disposed in the first flow path R1. The throttle portion 46d functions as an orifice that reduces the flow area of the first flow path R1. The flow area is the cross-sectional area of the drug solution flow path perpendicular to the flow direction of the drug solution.

於本實施形態中,節流部46d被形成於插入安裝構件46之第一構件46a。節流部46d係與分歧部42相對向。節流部46d朝向分歧部42射出藥液。於本實施形態中,節流部46d位於分歧部42之附近。因此,藥液自節流部46d射出後立即流入分歧部42。In this embodiment, the throttle portion 46d is formed in the first member 46a of the insert mounting member 46. The throttle portion 46d is opposite to the branch portion 42. The throttle portion 46d ejects the liquid medicine toward the branch portion 42. In this embodiment, the throttle portion 46d is located near the branch portion 42. Therefore, the liquid medicine flows into the branch portion 42 immediately after being ejected from the throttle portion 46d.

圖6表示第一方向Q1、第二方向Q2及第三方向Q3。第一方向Q 1表示自分歧部42朝向第一流路R1之方向。第二方向Q2表示自分歧部42朝向第二流路R2之方向。第三方向Q3表示自分歧部42朝向第三流路R3之方向。6 shows a first direction Q1, a second direction Q2, and a third direction Q3. The first direction Q1 indicates a direction from the branch portion 42 toward the first flow path R1. The second direction Q2 indicates a direction from the branch portion 42 toward the second flow path R2. The third direction Q3 indicates a direction from the branch portion 42 toward the third flow path R3.

圖6進一步表示第一角度θ1及第二角度θ2。第一角度θ1表示第一方向Q1與第三方向Q3所夾之角度。具體而言,第一角度θ1表示第一方向Q1與第三方向Q3所夾之角度中之最小角度。第二角度θ2表示第一方向Q1與第二方向Q2所夾之角度。具體而言,第二角度θ2表示第一方向Q1與第二方向Q2所夾之角度中之最小角度。FIG6 further shows a first angle θ1 and a second angle θ2. The first angle θ1 represents an angle between the first direction Q1 and the third direction Q3. Specifically, the first angle θ1 represents the minimum angle among the angles between the first direction Q1 and the third direction Q3. The second angle θ2 represents an angle between the first direction Q1 and the second direction Q2. Specifically, the second angle θ2 represents the minimum angle among the angles between the first direction Q1 and the second direction Q2.

第一角度θ1大於第二角度θ2(第一角度θ1>第二角度θ2)。亦即,與第二流路R2相比,第三流路R3相對於第一流路R1並不彎曲。因此,自第一流路R1流動至分歧部42之藥液係主要被朝第三流路R3導引。換言之,節流部46d朝向第三流路R3射出藥液。The first angle θ1 is greater than the second angle θ2 (the first angle θ1>the second angle θ2). That is, compared with the second flow path R2, the third flow path R3 is not bent relative to the first flow path R1. Therefore, the liquid medicine flowing from the first flow path R1 to the branching portion 42 is mainly guided toward the third flow path R3. In other words, the throttling portion 46d ejects the liquid medicine toward the third flow path R3.

於本實施形態中,第一角度θ1約為180度,第二角度θ2約為90度。In this embodiment, the first angle θ1 is approximately 180 degrees, and the second angle θ2 is approximately 90 degrees.

以下參照圖7,對於藥液之壓力進行說明。圖7為表示藥液之壓力的示意圖。The pressure of the drug solution will be described below with reference to Fig. 7. Fig. 7 is a schematic diagram showing the pressure of the drug solution.

圖7表示第一壓力P1、第二壓力P2及第三壓力P3。第一壓力P1表示位於第一流路R1中較節流部46d更靠上游區域之藥液的壓力。第二壓力P2表示位於分歧部42之藥液的壓力。第三壓力P3表示位於第二流路R2之藥液的壓力。FIG7 shows the first pressure P1, the second pressure P2, and the third pressure P3. The first pressure P1 represents the pressure of the liquid medicine in the upstream region of the throttle portion 46d in the first flow path R1. The second pressure P2 represents the pressure of the liquid medicine in the branching portion 42. The third pressure P3 represents the pressure of the liquid medicine in the second flow path R2.

圖7進一步表示第一移動方向X1及第一移動速度V1。第一移動方向X1表示於第一流路R1內且流動於節流部46d上游之藥液的移動方向。第一移動速度V1表示於第一流路R1內且流動於節流部46d上游之藥液的移動速度。7 further shows the first moving direction X1 and the first moving speed V1. The first moving direction X1 shows the moving direction of the liquid medicine flowing in the first flow path R1 and upstream of the throttle portion 46d. The first moving speed V1 shows the moving speed of the liquid medicine flowing in the first flow path R1 and upstream of the throttle portion 46d.

圖7進一步表示第二移動方向X2及第二移動速度V2。第二移動方向X2表示藥液自第一流路R1流入分歧部42時藥液的移動方向。第二移動方向X2係圖6所示之第一方向Q1之相反方向。第二移動速度V2表示藥液自第一流路R1流入分歧部42時藥液的移動速度。FIG7 further shows the second moving direction X2 and the second moving speed V2. The second moving direction X2 shows the moving direction of the drug when the drug flows from the first flow path R1 into the branching portion 42. The second moving direction X2 is the opposite direction of the first direction Q1 shown in FIG6. The second moving speed V2 shows the moving speed of the drug when the drug flows from the first flow path R1 into the branching portion 42.

於本實施形態中,自節流部46d射出之藥液係在自第一流路R1流入至分歧部42時,一面朝向第二移動方向X2一面以第二移動速度V2移動。In the present embodiment, the liquid medicine ejected from the throttle portion 46 d moves at the second moving speed V2 while moving in the second moving direction X2 when flowing from the first flow path R1 into the branching portion 42 .

如圖7所示,節流部46d的流路面積小於節流部46d之上游的流路面積。因此,根據伯努利定理,於節流部46d中,藥液的移動速度係較節流部46d之上游增加,並且藥液的壓力減少。其結果,自節流部46d射出藉由節流部46d加速並且減壓後之藥液。As shown in FIG7 , the flow area of the throttle portion 46d is smaller than the flow area upstream of the throttle portion 46d. Therefore, according to Bernoulli's theorem, the movement speed of the liquid medicine in the throttle portion 46d is increased compared to the upstream of the throttle portion 46d, and the pressure of the liquid medicine is reduced. As a result, the liquid medicine accelerated and depressurized by the throttle portion 46d is ejected from the throttle portion 46d.

由於自節流部46d射出藉由節流部46d加速並且減壓後之藥液,因此第二移動速度V2大於第一移動速度V1(第二移動速度V2>第一移動速度V1)。此外,第二壓力P2小於第一壓力P1(第二壓力P2<第一壓力P1)。Since the liquid medicine accelerated and depressurized by the throttle portion 46d is ejected from the throttle portion 46d, the second moving speed V2 is greater than the first moving speed V1 (the second moving speed V2>the first moving speed V1). In addition, the second pressure P2 is less than the first pressure P1 (the second pressure P2<the first pressure P1).

藉由變更圖5所示之第一閥47的開度,以變更第一壓力P1。第一閥47的開度越小,則第一流路R1中第一閥47所在位置之流路面積越小。其結果,由於通過第一閥47之每單位時間的藥液流量減少,因此第一壓力P1變小。此外,隨著第一壓力P1減小,第二壓力P2亦變小。The first pressure P1 is changed by changing the opening of the first valve 47 shown in FIG5 . The smaller the opening of the first valve 47 is, the smaller the flow area of the first flow path R1 where the first valve 47 is located is. As a result, the flow rate of the liquid per unit time passing through the first valve 47 is reduced, so the first pressure P1 is reduced. In addition, as the first pressure P1 is reduced, the second pressure P2 is also reduced.

此外,藉由將圖5所示之第二閥48變更為開放狀態或關閉狀態,以變更第二壓力P2。當第二閥48成為關閉狀態時,則通過第三流路R3之藥液流量為零,因此第二壓力P2增大。另一方面,當第二閥48成為開放狀態時,則通過第三流路R3之藥液流量增加,因此第二壓力P2變小。In addition, the second pressure P2 is changed by changing the second valve 48 shown in FIG5 to an open state or a closed state. When the second valve 48 is closed, the flow rate of the liquid medicine passing through the third flow path R3 is zero, so the second pressure P2 increases. On the other hand, when the second valve 48 is opened, the flow rate of the liquid medicine passing through the third flow path R3 increases, so the second pressure P2 decreases.

再者,第一閥47的開度之調整、及第二閥48的開閉狀態之切換係藉由圖1所示之控制部3進行。Furthermore, the adjustment of the opening degree of the first valve 47 and the switching of the open/closed state of the second valve 48 are performed by the control unit 3 shown in FIG. 1 .

圖7表示第一直徑D1、第二直徑D2、第三直徑D3、第四直徑D4、及第五直徑D5。第一直徑D1表示第一流路R1中位於節流部46d之上游部分的直徑。第二直徑D2表示節流部46d的直徑。第三直徑D3表示第一流路R1中位於節流部46d之下游部分的直徑。第四直徑D4表示第三流路R3之上游部的直徑。第三流路R3之上游部係表示第三流路R3中分歧部42之附近。第五直徑D5表示第二流路R2之上游部的直徑。第二流路R2之上游部係表示第二流路R2中分歧部42之附近。FIG. 7 shows a first diameter D1, a second diameter D2, a third diameter D3, a fourth diameter D4, and a fifth diameter D5. The first diameter D1 indicates the diameter of the upstream portion of the throttle portion 46d in the first flow path R1. The second diameter D2 indicates the diameter of the throttle portion 46d. The third diameter D3 indicates the diameter of the downstream portion of the throttle portion 46d in the first flow path R1. The fourth diameter D4 indicates the diameter of the upstream portion of the third flow path R3. The upstream portion of the third flow path R3 indicates the vicinity of the divergence portion 42 in the third flow path R3. The fifth diameter D5 indicates the diameter of the upstream portion of the second flow path R2. The upstream portion of the second flow path R2 indicates the vicinity of the divergence portion 42 in the second flow path R2.

第一直徑D1大於第二直徑D2(第一直徑D1>第二直徑D2)。第三直徑D3大於第二直徑D2(第三直徑D3>第二直徑D2)。第四直徑D4具有第三直徑D3以上之大小(第四直徑D4≧第三直徑D3)。第四直徑D4具有第五直徑D5以上之大小(第四直徑D4≧第五直徑D5)。再者,第四直徑D4與第五直徑D5之大小關係並無特別受限制。第四直徑D4亦可小於第五直徑D5。The first diameter D1 is larger than the second diameter D2 (the first diameter D1>the second diameter D2). The third diameter D3 is larger than the second diameter D2 (the third diameter D3>the second diameter D2). The fourth diameter D4 is larger than the third diameter D3 (the fourth diameter D4≧the third diameter D3). The fourth diameter D4 is larger than the fifth diameter D5 (the fourth diameter D4≧the fifth diameter D5). Furthermore, the size relationship between the fourth diameter D4 and the fifth diameter D5 is not particularly limited. The fourth diameter D4 may also be smaller than the fifth diameter D5.

接著,參照圖7至圖9,對於第一閥47之開度、第二閥48之開閉狀態、藥液自藥液噴嘴21之吐出量的關係進行說明。圖8為表示第二閥48成為關閉狀態的示意圖。圖9為表示第二閥48成為開放狀態的示意圖。Next, the relationship between the opening degree of the first valve 47, the opening and closing state of the second valve 48, and the discharge amount of the liquid medicine from the liquid medicine nozzle 21 will be described with reference to Figures 7 to 9. Figure 8 is a schematic diagram showing the second valve 48 in a closed state. Figure 9 is a schematic diagram showing the second valve 48 in an open state.

如圖7及圖8所示,控制部3將第二閥48(參照圖5)設為關閉狀態,藉此,自第一流路R1供給至分歧部42之藥液朝第二流路R2流動。於本實施形態中,自第一流路R1供給至分歧部42之藥液全部朝第二流路R2流動。此外,控制部3藉由調整第一閥47之開度,而調整自第一流路R1供給至分歧部42之藥液流量。藉此,調整自藥液噴嘴21吐出之藥液的吐出量。As shown in FIG. 7 and FIG. 8 , the control unit 3 sets the second valve 48 (see FIG. 5 ) to a closed state, thereby causing the liquid medicine supplied from the first flow path R1 to the branching portion 42 to flow toward the second flow path R2. In this embodiment, all the liquid medicine supplied from the first flow path R1 to the branching portion 42 flows toward the second flow path R2. In addition, the control unit 3 adjusts the flow rate of the liquid medicine supplied from the first flow path R1 to the branching portion 42 by adjusting the opening of the first valve 47. In this way, the discharge amount of the liquid medicine discharged from the liquid medicine nozzle 21 is adjusted.

另一方面,如圖7及圖9所示,控制部3在將第二閥48(參照圖5)設為開放狀態之狀態下,藉由調整第一閥47之開度,可調整第二壓力P2與第三壓力P3之壓力差。On the other hand, as shown in FIG. 7 and FIG. 9 , the control unit 3 can adjust the pressure difference between the second pressure P2 and the third pressure P3 by adjusting the opening of the first valve 47 while setting the second valve 48 (see FIG. 5 ) to the open state.

例如,藉由將第二壓力P2設為小於第三壓力P3,利用第二壓力P2與第三壓力P3之壓力差(第二壓力P2<第三壓力P3),產生吸引力F1。吸引力F1表示將第二流路R2內之藥液吸引至分歧部42之力。第一閥47之開度越大,則吸引力F1越大。For example, by setting the second pressure P2 to be less than the third pressure P3, the pressure difference between the second pressure P2 and the third pressure P3 (second pressure P2 < third pressure P3) is used to generate the suction force F1. The suction force F1 represents the force that attracts the liquid medicine in the second flow path R2 to the branching portion 42. The larger the opening of the first valve 47, the larger the suction force F1.

因為產生吸引力F1因而發生回吸(suck back)現像。回吸表示第二流路R2內藥液之全部或一部分因吸引力F1而被吸入分歧部42之情況。其結果,則停止自藥液噴嘴21吐出藥液。The suction force F1 generates a suck back phenomenon. The suck back means that all or part of the liquid medicine in the second flow path R2 is sucked into the branching portion 42 by the suction force F1. As a result, the liquid medicine ejection from the liquid medicine nozzle 21 stops.

藉由回吸而自第二流路R2流動至分歧部42之藥液被捲入自節流部46d射出之藥液的液流X,而被供給至第三流路R3(抽吸效果)。然後,供給至第三流路R3之藥液則被供給至回收槽51。The liquid medicine flowing from the second flow path R2 to the branching portion 42 by back suction is drawn into the liquid flow X of the liquid medicine ejected from the throttle portion 46 d and supplied to the third flow path R3 (suction effect). Then, the liquid medicine supplied to the third flow path R3 is supplied to the recovery tank 51 .

再者,例如,藉由將第一閥47之開度保持於既定之值,亦可將藥液之滯留端部位置Z保持於固定之位置。於此情況下,第一閥47之開度越大,則滯留端部位置Z被保持於越高之位置。滯留端部位置Z越高,則滯留端部位置Z越接近分歧部42。滯留端部位置Z越低,則滯留端部位置Z越接近藥液噴嘴21。Furthermore, for example, by maintaining the opening of the first valve 47 at a predetermined value, the stagnation end position Z of the liquid medicine can also be maintained at a fixed position. In this case, the larger the opening of the first valve 47 is, the higher the stagnation end position Z is maintained. The higher the stagnation end position Z is, the closer the stagnation end position Z is to the branching portion 42. The lower the stagnation end position Z is, the closer the stagnation end position Z is to the liquid medicine nozzle 21.

於本實施形態中,如圖5所示,藥液噴嘴21之前端係被配置於較返回配管44之下游側端部44b之排出口44c為高的位置。藉此,藉由將第二閥48自關閉狀態設為開放狀態,根據虹吸原理產生回吸。即,第二流路R2內之藥液被吸入分歧部42,而停止自藥液噴嘴21吐出藥液。In this embodiment, as shown in FIG. 5 , the front end of the liquid medicine nozzle 21 is arranged at a position higher than the discharge port 44c of the downstream side end portion 44b of the return pipe 44. Thus, by setting the second valve 48 from the closed state to the open state, back suction is generated according to the siphon principle. That is, the liquid medicine in the second flow path R2 is sucked into the branching portion 42, and the liquid medicine ejection from the liquid medicine nozzle 21 stops.

於本實施形態中,由於藥液噴嘴21之前端係被配置於較返回配管44之排出口44c為高的位置,因此藉由將第二閥48自關閉狀態設為開放狀態,不管第一閥47之開度如何,第二流路R2內之藥液皆被吸入分歧部42。此外,第一閥47之開度越大,則第二流路R2內之藥液被吸入分歧部42之速度越快。In this embodiment, since the front end of the liquid medicine nozzle 21 is arranged at a position higher than the discharge port 44c of the return pipe 44, by setting the second valve 48 from the closed state to the open state, the liquid medicine in the second flow path R2 is sucked into the branching portion 42 regardless of the opening degree of the first valve 47. In addition, the larger the opening degree of the first valve 47, the faster the liquid medicine in the second flow path R2 is sucked into the branching portion 42.

於本實施形態中,第一閥47係於關閉狀態下不完全將送液配管41之處理液流路(第一流路R1之一部分)關閉的閥。即,於第一閥47之開度為最小開度時,第一閥47不被關閉而開放。此時,第一閥47係略微開放。因此,於不自藥液噴嘴21吐出藥液之期間,藉由將第二閥48設為開放狀態,可使自第一流路R1供給至分歧部42之藥液朝第三流路R3流動。In this embodiment, the first valve 47 is a valve that does not completely close the treatment liquid flow path (a part of the first flow path R1) of the liquid delivery pipe 41 in the closed state. That is, when the opening of the first valve 47 is the minimum opening, the first valve 47 is not closed but opened. At this time, the first valve 47 is slightly opened. Therefore, during the period when the liquid medicine is not ejected from the liquid medicine nozzle 21, by setting the second valve 48 to the open state, the liquid medicine supplied from the first flow path R1 to the branching portion 42 can flow toward the third flow path R3.

以上,如參照圖5至圖9所說明者,藉由將第一閥47設為開放狀態且將第二閥48設為關閉狀態,而成為吐出狀態,該吐出狀態係使藥液自送液配管41朝供給配管43流通且自藥液噴嘴21吐出藥液的狀態。另一方面,藉由將第二閥48自關閉狀態設為開放狀態,而成為處理液返回狀態,該處理液返回狀態係使藥液自供給配管43朝返回配管44流通的狀態。藉此,藉由將第二閥48自關閉狀態設為開放狀態,在基板處理裝置100不進行基板W之處理之狀態時,可抑制藥液自藥液噴嘴21滴落。As described above with reference to FIGS. 5 to 9 , by setting the first valve 47 to the open state and the second valve 48 to the closed state, the discharge state is achieved, in which the chemical liquid flows from the liquid delivery pipe 41 to the supply pipe 43 and the chemical liquid is discharged from the chemical liquid nozzle 21. On the other hand, by setting the second valve 48 from the closed state to the open state, the processing liquid return state is achieved, in which the chemical liquid flows from the supply pipe 43 to the return pipe 44. Thus, by setting the second valve 48 from the closed state to the open state, when the substrate processing apparatus 100 is not processing the substrate W, it is possible to suppress the chemical liquid from dripping from the chemical liquid nozzle 21.

此外,如上所述,第一閥47係於關閉狀態下不完全將送液配管41之處理液流路(第一流路R1之一部分)關閉的閥。藉此,與將第一閥47構成為於關閉狀態下完全將送液配管41之流路關閉之情況不同,其可抑制起因於第一閥47之開閉動作而於第一閥47產生之粉塵。具體而言,例如,當藉由使第一閥之閥體與閥座接觸而使第一閥成為關閉狀態之構成時,由於反復使閥體與閥座相互接觸及分離而產生粉塵。於本實施形態中,由於第一閥47係不完全關閉的閥,因此可抑制起因於第一閥47之開閉動作而於第一閥47產生粉塵。如此,由於可抑制於第一閥47產生粉塵,因此可抑制自藥液噴嘴21吐出粉塵。藉此,其可抑制基板W被污染。Furthermore, as described above, the first valve 47 is a valve that does not completely close the process liquid flow path (a portion of the first flow path R1) of the liquid delivery pipe 41 in the closed state. Thus, unlike the case where the first valve 47 is configured to completely close the flow path of the liquid delivery pipe 41 in the closed state, it is possible to suppress dust generated in the first valve 47 due to the opening and closing action of the first valve 47. Specifically, for example, when the first valve is configured to be in the closed state by bringing the valve body of the first valve into contact with the valve seat, dust is generated by repeatedly bringing the valve body and the valve seat into contact and separation with each other. In this embodiment, since the first valve 47 is not completely closed, it is possible to suppress the generation of dust in the first valve 47 due to the opening and closing operation of the first valve 47. In this way, since the generation of dust in the first valve 47 can be suppressed, the discharge of dust from the chemical solution nozzle 21 can be suppressed. This can suppress the substrate W from being contaminated.

此外,於本實施形態中,在藥液噴嘴21之上游側不設置於關閉狀態下將流路完全關閉的閥。於本實施形態中,至少於自藥液噴嘴21至循環過濾器34之流路不設置在關閉狀態下將流路完全關閉的閥。此外,於本實施形態中,於送液配管41及供給配管43不設置第一閥47以外的閥。藉此,其可進一步抑制自藥液噴嘴21吐出粉塵,因此可進一步抑制基板W被污染。In addition, in this embodiment, no valve is provided on the upstream side of the chemical liquid nozzle 21 to completely close the flow path in a closed state. In this embodiment, at least no valve is provided in the flow path from the chemical liquid nozzle 21 to the circulation filter 34 to completely close the flow path in a closed state. In addition, in this embodiment, no valve other than the first valve 47 is provided in the liquid delivery pipe 41 and the supply pipe 43. Thereby, it is possible to further suppress the discharge of dust from the chemical liquid nozzle 21, and thus it is possible to further suppress the contamination of the substrate W.

接著,參照圖10及圖11,對於朝基板W供給藥液之藥液供給處理(步驟S2)中基板處理裝置100之動作,進行詳細說明。圖10為表示對基板W供給藥液之藥液供給處理(步驟S2)中基板處理裝置100之動作的一例之流程圖。圖11表示對基板W供給藥液之藥液供給處理(步驟S2)中第一閥47之開度、第二閥48之開度及流通於藥液噴嘴21之藥液流量的時序圖。Next, referring to FIG. 10 and FIG. 11 , the operation of the substrate processing apparatus 100 in the chemical liquid supply process (step S2) of supplying chemical liquid to the substrate W is described in detail. FIG. 10 is a flow chart showing an example of the operation of the substrate processing apparatus 100 in the chemical liquid supply process (step S2) of supplying chemical liquid to the substrate W. FIG. 11 is a timing chart showing the opening of the first valve 47, the opening of the second valve 48, and the flow rate of chemical liquid flowing through the chemical liquid nozzle 21 in the chemical liquid supply process (step S2) of supplying chemical liquid to the substrate W.

如圖10及圖11所示,於步驟S21中,基板處理裝置100成為吐出停止狀態。吐出停止狀態係不從藥液噴嘴21吐出藥液之狀態。在吐出停止狀態下,藥液噴嘴21係被配置於退避位置。此外,於吐出停止狀態下,控制部3將第一閥47設為關閉狀態(後述之第三開度),且將第二閥48設為開放狀態。再者,於本實施形態中,第一閥47不完全關閉。As shown in FIG. 10 and FIG. 11 , in step S21, the substrate processing device 100 enters a discharging stop state. The discharging stop state is a state in which the liquid medicine is not discharged from the liquid medicine nozzle 21. In the discharging stop state, the liquid medicine nozzle 21 is arranged in a retreat position. In addition, in the discharging stop state, the control unit 3 sets the first valve 47 to a closed state (a third opening degree described later) and sets the second valve 48 to an open state. Furthermore, in this embodiment, the first valve 47 is not completely closed.

接著,於步驟S22中,控制部3使藥液噴嘴21自退避位置朝處理位置移動。Next, in step S22, the control unit 3 moves the chemical liquid nozzle 21 from the retreat position to the processing position.

接著,於步驟S23中,控制部3將第一閥47之開度設為第一開度且將第二閥48設為關閉狀態。第一開度係朝基板W供給處理液時第一閥47之開度。第一開度係根據處理液之種類及基板W之被處理膜等對基板W的處理條件而被適宜設定。Next, in step S23, the control unit 3 sets the opening of the first valve 47 to the first opening and sets the second valve 48 to the closed state. The first opening is the opening of the first valve 47 when the processing liquid is supplied to the substrate W. The first opening is appropriately set according to the processing conditions of the substrate W, such as the type of the processing liquid and the film to be processed of the substrate W.

藉由將第一閥47之開度設為第一開度且將第二閥48設為關閉狀態,自藥液噴嘴21朝基板W被供給處理液。換言之,其處於吐出狀態。當經過既定之處理時間,則進入步驟S24。By setting the opening of the first valve 47 to the first opening and the second valve 48 to the closed state, the processing liquid is supplied from the liquid nozzle 21 toward the substrate W. In other words, it is in the ejection state. When the predetermined processing time has passed, the process proceeds to step S24.

接著,於步驟S24中,控制部3將第二閥48設為開放狀態且將第一閥47之開度自第一開度設為第二開度。藉此,如上述,其產生吸引力F1,進而發生回吸。換言之,其成為處理液返回狀態。以下,有時將回吸記載為處理液返回。Next, in step S24, the control unit 3 sets the second valve 48 to an open state and sets the opening of the first valve 47 from the first opening to the second opening. As a result, as described above, a suction force F1 is generated, and back suction occurs. In other words, it becomes a process liquid return state. Hereinafter, back suction is sometimes described as process liquid return.

於本實施形態中,第二開度小於第一開度。第二開度雖無特別限制,但於步驟S24中,由於通過第一閥47之藥液不自藥液噴嘴21吐出,因此較佳為第二開度較小。此外,亦可將第二開度設為例如與第一開度相同,但當在第二開度較大之狀態下使第二閥48自關閉狀態急劇變化為開放狀態,則有因急劇回吸而於供給配管43內產生氣泡之可能性。從此點而言,較佳為將第二開度設為小於第一開度。此外,如上述,亦可藉由調整第二開度以調整吸引力F1,將藥液之滯留端部位置Z保持於供給配管43之既定位置。In the present embodiment, the second opening is smaller than the first opening. Although there is no particular limitation on the second opening, in step S24, since the liquid medicine passing through the first valve 47 is not ejected from the liquid medicine nozzle 21, it is preferable that the second opening is smaller. In addition, the second opening may be set to be, for example, the same as the first opening, but when the second valve 48 is suddenly changed from a closed state to an open state when the second opening is larger, there is a possibility that bubbles are generated in the supply piping 43 due to rapid back suction. From this point of view, it is preferable to set the second opening to be smaller than the first opening. In addition, as described above, the suction force F1 may be adjusted by adjusting the second opening to maintain the retention end position Z of the liquid medicine at a predetermined position of the supply piping 43.

然而,如上述,於本實施形態中,由於藥液噴嘴21之前端係被配置於較返回配管44之下游側端部44b之排出口44c為高的位置,因此,於步驟S24中,藥液噴嘴21及供給配管43之藥液經由分歧部42及返回配管44被回收至回收槽51。此外,於藥液噴嘴21之前端配置於較返回配管44之排出口44c為高的位置時,即使將第一閥47設為關閉狀態,亦會產生回吸。However, as described above, in the present embodiment, since the front end of the liquid medicine nozzle 21 is arranged at a position higher than the discharge port 44c of the downstream side end portion 44b of the return pipe 44, in step S24, the liquid medicine of the liquid medicine nozzle 21 and the supply pipe 43 is recovered to the recovery tank 51 via the branch portion 42 and the return pipe 44. In addition, when the front end of the liquid medicine nozzle 21 is arranged at a position higher than the discharge port 44c of the return pipe 44, even if the first valve 47 is set to a closed state, back suction will occur.

接著,於步驟S25中,控制部3維持將第二閥48設為開放狀態,並將第一閥47之開度自第二開度設為第三開度。第三開度為小於第二開度。第三開度係將第一閥47設為關閉狀態之開度。再者,於本實施形態中,第三開度係不完全將送液配管41關閉之開度。Next, in step S25, the control unit 3 maintains the second valve 48 in the open state, and sets the opening of the first valve 47 from the second opening to the third opening. The third opening is smaller than the second opening. The third opening is an opening that sets the first valve 47 in the closed state. In this embodiment, the third opening is an opening that does not completely close the liquid delivery pipe 41.

此外,於步驟S24或步驟S25中,控制部3使藥液噴嘴21自吐出位置朝退避位置移動。藉此,則成為吐出停止狀態。再者,使藥液噴嘴21自吐出位置朝退避位置移動之時機,只要是在步驟S24之回吸產生之後,則無特別限制。In addition, in step S24 or step S25, the control unit 3 moves the liquid medicine nozzle 21 from the discharge position to the retreat position. This makes the discharge stop state. Furthermore, the timing of moving the liquid medicine nozzle 21 from the discharge position to the retreat position is not particularly limited as long as it is after the back suction occurs in step S24.

以上,如參照圖10及圖11所說明,本實施形態之基板處理方法包含有以下之步驟(步驟S23):藉由將第一閥47設為開放狀態且將第二閥48設為關閉狀態,而使藥液自送液配管41朝供給配管43流通且自藥液噴嘴21吐出藥液。此外,基板處理方法包含有以下之步驟(步驟S24):藉由將第二閥48自關閉狀態設為開放狀態,使藥液自供給配管43朝返回配管44流通。因此,藉由將第二閥48自關閉狀態設為開放狀態,於基板處理裝置100不進行基板W之處理之狀態下,其可抑制藥液從藥液噴嘴21滴落。As described above with reference to FIG. 10 and FIG. 11 , the substrate processing method of the present embodiment includes the following step (step S23): by setting the first valve 47 to an open state and the second valve 48 to a closed state, the chemical solution flows from the liquid delivery pipe 41 to the supply pipe 43 and the chemical solution is ejected from the chemical solution nozzle 21. In addition, the substrate processing method includes the following step (step S24): by setting the second valve 48 from a closed state to an open state, the chemical solution flows from the supply pipe 43 to the return pipe 44. Therefore, by setting the second valve 48 from a closed state to an open state, when the substrate processing apparatus 100 is not processing the substrate W, it is possible to suppress the chemical solution from dripping from the chemical solution nozzle 21.

此外,如上述,被執行以下之步驟(步驟S24):藉由將第二閥48自關閉狀態設為開放狀態,且將第一閥47之開度自第一開度設為第二開度,使藥液朝返回配管44流通。因此,其可適當地進行回吸。例如,其可抑制因急劇之回吸而於供給配管43內產生氣泡。Furthermore, as described above, the following step (step S24) is performed: by setting the second valve 48 from the closed state to the open state, and setting the opening of the first valve 47 from the first opening to the second opening, the liquid medicine flows toward the return pipe 44. Therefore, it is possible to appropriately perform the back suction. For example, it is possible to suppress the generation of bubbles in the supply pipe 43 due to the rapid back suction.

此外,如上述,本實施形態之基板處理方法包含有以下之步驟 (步驟S25) :藉由將第一閥47之開度自第二開度設為第三開度,且將第二閥48保持為開放狀態,使較吐出藥液之步驟(步驟S23)少量之藥液自送液配管41朝返回配管44流通。藉此,於不朝基板W吐出藥液之狀態下,其可抑制藥液自送液配管41經由返回配管44朝回收槽51流通。In addition, as described above, the substrate processing method of the present embodiment includes the following step (step S25): by setting the opening of the first valve 47 from the second opening to the third opening, and keeping the second valve 48 in an open state, a smaller amount of chemical solution than the step of discharging the chemical solution (step S23) is allowed to flow from the liquid delivery pipe 41 to the return pipe 44. In this way, when the chemical solution is not discharged toward the substrate W, it is possible to suppress the chemical solution from flowing from the liquid delivery pipe 41 to the recovery tank 51 through the return pipe 44.

此外,於本實施形態中,除了吐出藥液之步驟(步驟S23)以外,第二閥48係被保持於開放狀態。因此,即使於第一閥47因故障等而不能保持為關閉狀態時,亦可將通過第一閥47之藥液經由第二閥48及返回配管44回收至回收槽51。In addition, in this embodiment, except for the step of discharging the liquid medicine (step S23), the second valve 48 is kept in an open state. Therefore, even if the first valve 47 cannot be kept in a closed state due to a malfunction, the liquid medicine passing through the first valve 47 can be recovered to the recovery tank 51 via the second valve 48 and the return pipe 44.

(第2實施形態) 接著,參照圖12及圖13,對本發明第2實施形態之基板處理裝置100之藥液供給處理(步驟S2)的動作進行說明。於第2實施形態中,對以下例進行說明,即其與圖10及圖11所示之藥液供給處理不同,而於朝基板W吐出藥液之步驟(步驟S23)之前,減少供給配管43及藥液噴嘴21之污染之例。圖12為表示第2實施形態之基板處理裝置100之藥液供給處理(步驟S2)中動作之一例的流程圖。圖13為表示第2實施形態之基板處理裝置100之藥液供給處理(步驟S2)中第一閥47之開度、第二閥48之開度、流通於藥液噴嘴21之藥液流量、及藥液噴嘴21之位置的時序圖。 (Second embodiment) Next, referring to FIG. 12 and FIG. 13, the operation of the liquid supply process (step S2) of the substrate processing apparatus 100 of the second embodiment of the present invention is described. In the second embodiment, the following example is described, that is, it is different from the liquid supply process shown in FIG. 10 and FIG. 11, and before the step of discharging the liquid onto the substrate W (step S23), the contamination of the supply pipe 43 and the liquid nozzle 21 is reduced. FIG. 12 is a flowchart showing an example of the operation in the liquid supply process (step S2) of the substrate processing apparatus 100 of the second embodiment. FIG. 13 is a timing diagram showing the opening of the first valve 47, the opening of the second valve 48, the flow rate of the chemical liquid flowing through the chemical liquid nozzle 21, and the position of the chemical liquid nozzle 21 in the chemical liquid supply process (step S2) of the substrate processing device 100 of the second embodiment.

如圖12及圖13所示,其與第1實施形態相同,於步驟S21中,基板處理裝置100成為吐出停止狀態。吐出停止狀態係不從藥液噴嘴21吐出藥液之狀態。於吐出停止狀態下,藥液噴嘴21被配置於退避位置。此外,於吐出停止狀態下,控制部3將第一閥47設為關閉狀態(第三開度),且將第二閥48設為開放狀態。再者,於本實施形態中,第一閥47不完全關閉。As shown in FIG. 12 and FIG. 13 , similar to the first embodiment, in step S21, the substrate processing device 100 is in the ejection stop state. The ejection stop state is a state in which the chemical liquid is not ejected from the chemical liquid nozzle 21. In the ejection stop state, the chemical liquid nozzle 21 is arranged at the retreat position. In addition, in the ejection stop state, the control unit 3 sets the first valve 47 to the closed state (third opening) and sets the second valve 48 to the open state. Furthermore, in this embodiment, the first valve 47 is not completely closed.

接著,於步驟S211中,控制部3朝供給配管43及藥液噴嘴21供給藥液,使藥液從藥液噴嘴21吐出(預備吐出)。藉此,由於可利用藥液充滿供給配管43及藥液噴嘴21之內部,因此可將供給配管43及藥液噴嘴21之內部淨化。具體而言,由於前述之處理液返回,腔室6內之氣體則流入供給配管43及藥液噴嘴21之內部。因此,供給配管43及藥液噴嘴21之內部存在被流入之氣體污染之可能性。於本實施形態中,藉由使藥液朝供給配管43及藥液噴嘴21流通,其可將供給配管43及藥液噴嘴21之內部淨化。藉此,其可於後續之藥液吐出步驟(步驟S23)中,抑制被污染之藥液朝基板W吐出。Next, in step S211, the control unit 3 supplies liquid medicine to the supply pipe 43 and the liquid medicine nozzle 21, so that the liquid medicine is discharged from the liquid medicine nozzle 21 (preparatory discharge). In this way, since the inside of the supply pipe 43 and the liquid medicine nozzle 21 can be filled with liquid medicine, the inside of the supply pipe 43 and the liquid medicine nozzle 21 can be purified. Specifically, due to the return of the aforementioned processing liquid, the gas in the chamber 6 flows into the inside of the supply pipe 43 and the liquid medicine nozzle 21. Therefore, there is a possibility that the inside of the supply pipe 43 and the liquid medicine nozzle 21 is contaminated by the inflowing gas. In this embodiment, by flowing the chemical solution toward the supply pipe 43 and the chemical solution nozzle 21, the inside of the supply pipe 43 and the chemical solution nozzle 21 can be purified. Thereby, in the subsequent chemical solution discharge step (step S23), it is possible to suppress the contaminated chemical solution from being discharged toward the substrate W.

於步驟S211中,控制部3將第一閥47之開度自第三開度設為第四開度,且將第二閥48自開放狀態設為關閉狀態。藉此,自藥液噴嘴21朝基板W供給藥液。換言之,其成為預備吐出狀態。第四開度小於第一開度且大於第二開度。藉由將第四開度設為小於第一開度,可藉由預備吐出抑制藥液之消耗。再者,第四開度例如可與第一開度相同,亦可大於第一開度。In step S211, the control unit 3 sets the opening of the first valve 47 from the third opening to the fourth opening, and sets the second valve 48 from the open state to the closed state. In this way, the chemical liquid is supplied from the chemical liquid nozzle 21 to the substrate W. In other words, it becomes a pre-discharge state. The fourth opening is smaller than the first opening and larger than the second opening. By setting the fourth opening smaller than the first opening, the consumption of the chemical liquid can be suppressed by pre-discharge. In addition, the fourth opening can be, for example, the same as the first opening, or larger than the first opening.

接著,於步驟S212中,控制部3將第二閥48設為開放狀態,且將第一閥47之開度自第四開度設為第二開度。藉此,則產生吸引力F1,進而產生回吸。換言之,其成為預備吐出處理液返回狀態。再者,亦可將步驟S212中第一閥47之開度設為小於步驟S24中之第一閥47之開度。換言之,亦可將步驟S212中第一閥47之開度設為小於第二開度之第五開度。於此情況下,藥液噴嘴21及供給配管43內部之藥液返回分歧部42之速度變慢。Next, in step S212, the control unit 3 sets the second valve 48 to an open state, and sets the opening of the first valve 47 from the fourth opening to the second opening. Thereby, a suction force F1 is generated, and then back-suction is generated. In other words, it becomes a state of preparing to discharge the treated liquid back. Furthermore, the opening of the first valve 47 in step S212 can also be set to be smaller than the opening of the first valve 47 in step S24. In other words, the opening of the first valve 47 in step S212 can also be set to be a fifth opening that is smaller than the second opening. In this case, the speed at which the liquid in the liquid nozzle 21 and the supply piping 43 return to the branching portion 42 slows down.

接著,於步驟S22中,控制部3使藥液噴嘴21自退避位置朝處理位置移動。於本實施形態中,控制部3係在預備吐出處理液返回狀態下供給配管43內部之藥液耗盡之前,使藥液噴嘴21自退避位置朝處理位置移動。Next, in step S22, the control unit 3 moves the chemical liquid nozzle 21 from the retreat position to the processing position. In this embodiment, the control unit 3 moves the chemical liquid nozzle 21 from the retreat position to the processing position before the chemical liquid in the supply pipe 43 is exhausted in the state of preparing to discharge the processing liquid.

接著,於步驟S23中,控制部3將第一閥47之開度設為第一開度,且將第二閥48設為關閉狀態。於本實施形態中,控制部3係於預備吐出處理液返回狀態下供給配管43內部之藥液耗盡之前,將第一閥47之開度自第二開度設為第一開度,且將第二閥48自開放狀態設為關閉狀態,藉此而設為吐出狀態。Next, in step S23, the control unit 3 sets the opening of the first valve 47 to the first opening, and sets the second valve 48 to the closed state. In this embodiment, the control unit 3 sets the opening of the first valve 47 from the second opening to the first opening, and sets the second valve 48 from the open state to the closed state before the liquid in the supply pipe 43 is exhausted in the state of preparing to discharge the treatment liquid, thereby setting the discharge state.

再者,本實施形態之步驟S24及步驟S25係與第1實施形態之步驟S24及步驟S25相同,因此省略其說明。Furthermore, step S24 and step S25 of this embodiment are the same as step S24 and step S25 of the first embodiment, and thus their description is omitted.

以上,如參照圖12及圖13所說明,本實施形態之基板處理方法包含以下之步驟(步驟S22及步驟S23):於供給配管43內部之藥液耗盡之前,使藥液噴嘴21自退避位置朝處理位置移動,且將第一閥47之開度自第二開度設為第一開度,將第二閥48自開放狀態設為關閉狀態,藉此,自藥液噴嘴21吐出藥液而對基板W進行處理。因此,於進行預備吐出後,於使藥液噴嘴21朝處理位置移動且自藥液噴嘴21吐出藥液之前之期間內,其可抑制氣體流入供給配管43及藥液噴嘴21之內部整體。藉此,其可抑制供給配管43及藥液噴嘴21之內部被氣體污染。As described above with reference to FIG. 12 and FIG. 13 , the substrate processing method of the present embodiment includes the following steps (steps S22 and S23): before the chemical solution in the supply pipe 43 is exhausted, the chemical solution nozzle 21 is moved from the retreat position to the processing position, and the opening of the first valve 47 is set from the second opening to the first opening, and the second valve 48 is set from the open state to the closed state, thereby discharging the chemical solution from the chemical solution nozzle 21 to process the substrate W. Therefore, after the preliminary discharging, during the period before the chemical solution nozzle 21 is moved to the processing position and the chemical solution is discharged from the chemical solution nozzle 21, it is possible to suppress the gas from flowing into the entire interior of the supply pipe 43 and the chemical solution nozzle 21. This can prevent the inside of the supply pipe 43 and the chemical liquid nozzle 21 from being contaminated by the gas.

第2實施形態之其他構成、基板處理方法及效果係與第1實施形態相同。The other structures, substrate processing methods and effects of the second embodiment are the same as those of the first embodiment.

(第1變形例) 接著,參照圖14,對於本發明第1變形例之基板處理裝置100進行說明。圖14為表示根據本發明第1變形例,基板處理裝置100的插入安裝構件46周邊的構造圖。於第1變形例中,對第一流路R1及第三流路R3自分歧部42起於大致水平方向延伸之例進行說明。 (First variant) Next, referring to FIG. 14 , a substrate processing apparatus 100 according to the first variant of the present invention is described. FIG. 14 is a structural diagram showing the periphery of the insertion mounting member 46 of the substrate processing apparatus 100 according to the first variant of the present invention. In the first variant, an example in which the first flow path R1 and the third flow path R3 extend in a substantially horizontal direction from the branching portion 42 is described.

如圖14所示,於第1變形例中,插入安裝構件46之第一構件46a及第三構件46c係以朝大致水平方向延伸之方式被配置。第二構件46b係以朝上方延伸之方式被配置。換言之,第一流路R1及第三流路R3係自分歧部42起朝大致水平方向延伸。此外,第二流路R2係自分歧部42起朝上方延伸。因此,其可於吐出停止狀態下,抑制插入安裝構件46內之藥液朝供給配管43之流出,因此其可進一步抑制藥液自藥液噴嘴21滴落。再者,當於第一流路R1及第三流路R3朝大致水平方向延伸時,第二流路R2亦可朝下方延伸。As shown in FIG. 14 , in the first variant, the first member 46a and the third member 46c of the insert mounting member 46 are configured to extend in a substantially horizontal direction. The second member 46b is configured to extend upward. In other words, the first flow path R1 and the third flow path R3 extend in a substantially horizontal direction from the branch portion 42. In addition, the second flow path R2 extends upward from the branch portion 42. Therefore, it can suppress the outflow of the liquid medicine in the insert mounting member 46 toward the supply pipe 43 in the dispensing stop state, thereby further suppressing the liquid medicine from dripping from the liquid medicine nozzle 21. Furthermore, when the first flow path R1 and the third flow path R3 extend in a substantially horizontal direction, the second flow path R2 can also extend downward.

(第2變形例) 接著參照圖15,對根據本發明第2變形例之基板處理裝置100進行說明。圖15為表示根據本發明第2變形例之基板處理裝置100的供給機構40周邊的構造圖。於第2變形例中,對在送液配管41、供給配管43及返回配管44之分歧點,即分歧部42未設置插入安裝構件46之例進行說明。 (Second variant) Next, referring to FIG. 15, a substrate processing apparatus 100 according to the second variant of the present invention is described. FIG. 15 is a structural diagram showing the periphery of the supply mechanism 40 of the substrate processing apparatus 100 according to the second variant of the present invention. In the second variant, an example in which the insertion mounting member 46 is not provided at the branching point of the liquid delivery pipe 41, the supply pipe 43, and the return pipe 44, that is, the branching portion 42 is described.

如圖15所示,於第2變形例中,在送液配管41、供給配管43及返回配管44之分歧點,即分歧部42,未設置插入安裝構件46。具體而言,於分歧部42周邊未設置將第一流路R1之流路面積縮小之節流部46d。即使在不設置節流部46d之情況下,如上述,亦可使藥液自供給配管43朝返回配管44流通。As shown in FIG. 15 , in the second modification, the insertion mounting member 46 is not provided at the branching point of the liquid delivery pipe 41, the supply pipe 43, and the return pipe 44, that is, the branching portion 42. Specifically, the throttle portion 46d for reducing the flow area of the first flow path R1 is not provided around the branching portion 42. Even when the throttle portion 46d is not provided, the liquid medicine can flow from the supply pipe 43 to the return pipe 44 as described above.

進而,於該第2變形例中,供給機構40具備有插入安裝構件146。再者,亦可於未在分歧部42設置插入安裝構件46之構成中,不設置插入安裝構件146。Furthermore, in the second modification, the supply mechanism 40 is provided with the insertion mounting member 146. Furthermore, in a configuration in which the insertion mounting member 46 is not provided in the branching portion 42, the insertion mounting member 146 may not be provided.

插入安裝構件146具備有:第一構件46a、第二構件46b、及第三構件46c。由於插入安裝構件146係與插入安裝構件46同樣地被構成,並且具有與插入安裝構件46相同之功能,因此省略對插入安裝構件146之詳細說明。The insert mounting member 146 includes a first member 46a, a second member 46b, and a third member 46c. Since the insert mounting member 146 is constructed in the same manner as the insert mounting member 46 and has the same function as the insert mounting member 46, a detailed description of the insert mounting member 146 is omitted.

在插入安裝構件146之第二構件46b被連接有返回配管44。空氣或氮氣等被流入第一構件46a。第三構件46c係經由配管與回收槽51所連接。藉由調整空氣或氮氣朝第一構件46a之流入量,其可調整通過節流部46d(未圖示)後之內壓。藉此,由於可將第二構件46b內之藥液朝第三構件46c吸引,因此可調整通過返回配管44之藥液流量。其結果,可調整藥液自藥液噴嘴21及供給配管43朝分歧部42返回之速度。The return pipe 44 is connected to the second member 46b of the insert mounting member 146. Air or nitrogen or the like flows into the first member 46a. The third member 46c is connected to the recovery tank 51 via a pipe. By adjusting the inflow of air or nitrogen into the first member 46a, the internal pressure after passing through the throttling portion 46d (not shown) can be adjusted. In this way, since the liquid medicine in the second member 46b can be sucked toward the third member 46c, the flow rate of the liquid medicine passing through the return pipe 44 can be adjusted. As a result, the speed at which the liquid medicine returns from the liquid medicine nozzle 21 and the supply pipe 43 to the branching portion 42 can be adjusted.

以上,雖已參照圖式對於本發明之實施形態進行了說明。但是,本發明不受限於上述實施形態,只要於不超出其實質內容之範圍內,其可於各種態樣中被實施。此外,上述實施形態所揭示之複數個構成要件亦可適當地變更。例如,可將某一實施形態所示之全部構成要件中某構成要件追加至另一個實施形態之構成要件、或者可將某實施形態所示之全部構成要件中數個構成要件自實施形態中刪除。Although the embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited to the embodiments described above and can be implemented in various forms within the scope of the essential contents thereof. In addition, the plurality of constituent elements disclosed in the embodiments described above can also be appropriately changed. For example, a constituent element of all constituent elements shown in a certain embodiment can be added to the constituent elements of another embodiment, or a plurality of constituent elements of all constituent elements shown in a certain embodiment can be deleted from the embodiment.

此外,為了容易理解本發明,圖式係以各個構成要件作為主體進行示意性表示者,圖示中各構成要件之厚度、長度、數量、間隔等,視製作圖式之情況,其有時可能與實際不同。此外,上述實施形態所示之各構成要件之構成僅係一例而已,並非被特別限定者,當然其可於實質上不超出本發明之功效的範圍內進行各種變更。In addition, in order to facilitate the understanding of the present invention, the drawings are schematically represented with each component as the main body, and the thickness, length, quantity, spacing, etc. of each component in the drawings may sometimes be different from the actual ones depending on the circumstances of making the drawings. In addition, the composition of each component shown in the above-mentioned embodiment is only an example and is not particularly limited. Of course, various changes can be made within the scope of the effect of the present invention.

於上述實施形態中,雖已例示了第一閥47係於關閉狀態下不完全將送液配管41之流路關閉的閥,但本發明並不受限於此。第一閥47亦可為於關閉狀態下完全將送液配管41之流路關閉的閥。但是,於此情況下,較佳為,使用閥體與閥座之接觸面積比較小的例如馬達針閥。In the above embodiment, although the first valve 47 is illustrated as a valve that does not completely close the flow path of the liquid delivery pipe 41 in the closed state, the present invention is not limited thereto. The first valve 47 may also be a valve that completely closes the flow path of the liquid delivery pipe 41 in the closed state. However, in this case, it is preferable to use a valve with a relatively small contact area between the valve body and the valve seat, such as a motor needle valve.

此外,於上述實施形態中,雖已對於將藥液噴嘴21之前端配置於較返回配管44之下游側端部44b之排出口44c為高的位置之例進行了說明,但本發明不受限於此。其亦可將藥液噴嘴21之前端配置於與返回配管44之下游側端部44b之排出口44c相同的位置、或者低於排出口44c的位置。於此情況下,其不會產生因虹吸原理所引起之回吸。In addition, in the above-mentioned embodiment, although the example in which the front end of the liquid medicine nozzle 21 is arranged at a position higher than the discharge port 44c of the downstream side end portion 44b of the return pipe 44 has been described, the present invention is not limited thereto. The front end of the liquid medicine nozzle 21 may also be arranged at the same position as the discharge port 44c of the downstream side end portion 44b of the return pipe 44, or at a position lower than the discharge port 44c. In this case, the back suction caused by the siphon principle will not be generated.

此外,在將藥液噴嘴21之前端配置於與返回配管44之下游側端部44b之排出口44c相同的高度、或者低於排出口44c的位置時,藉由調整第一閥47之開度,亦可使滯留端部位置Z停留於自藥液噴嘴21之前端至供給配管43之上游側端部43a間的既定位置。In addition, when the front end of the liquid nozzle 21 is arranged at the same height as the discharge port 44c of the downstream side end portion 44b of the return piping 44, or at a position lower than the discharge port 44c, by adjusting the opening of the first valve 47, the retention end position Z can also be kept at a predetermined position between the front end of the liquid nozzle 21 and the upstream side end portion 43a of the supply piping 43.

此外,於上述實施形態中,雖已對第一閥47可調整開度之例進行了說明,但本發明並不受限於此,第一閥47亦可為不能調整開度者。即,第一閥47亦可在開放狀態或關閉狀態之2個狀態間變更。In addition, in the above-mentioned embodiment, although the example in which the first valve 47 can adjust the opening degree has been described, the present invention is not limited thereto, and the first valve 47 can also be one in which the opening degree cannot be adjusted. That is, the first valve 47 can also be changed between two states of an open state or a closed state.

此外,例如於第2實施形態中,雖已對於藥液吐出步驟(步驟S23)中,為了抑制污染之藥液朝基板W吐出,而進行預備吐出將供給配管43及藥液噴嘴21之內部淨化之例進行了說明,但本發明不受限於此。例如,其亦可於藥液噴嘴21附近配置分歧部42,以縮短供給配管43。於此情況下,其可抑制供給配管43內部之污染量,因此可抑制被污染之藥液污染基板W。In addition, for example, in the second embodiment, in order to suppress the contaminated chemical solution from being discharged toward the substrate W, the example of pre-discharging and purifying the inside of the supply pipe 43 and the chemical solution nozzle 21 has been described, but the present invention is not limited thereto. For example, the branching portion 42 may be arranged near the chemical solution nozzle 21 to shorten the supply pipe 43. In this case, the amount of contamination inside the supply pipe 43 can be suppressed, and thus the contaminated chemical solution can be suppressed from contaminating the substrate W.

此外,於上述實施形態中,雖已對於使用藥液作為處理液之例進行了說明,但本發明不受限於此。其亦可使用清洗液作為處理液。 (產業上之可利用性) In addition, in the above-mentioned embodiment, although the example of using a chemical solution as a processing liquid has been described, the present invention is not limited thereto. It is also possible to use a cleaning liquid as a processing liquid. (Industrial applicability)

本發明可應用於基板處理裝置及基板處理方法之領域。The present invention can be applied to the fields of substrate processing devices and substrate processing methods.

1:處理單元 2:記憶部 3:控制部 4:流體盒 4A:第一開口部 4B:第二開口部 4C:第三開口部 5:藥液貯存櫃 6:腔室 7:FFU(風扇過濾器單元) 8:隔壁 9:閘門 10:旋轉卡盤 11:卡盤銷 12:旋轉座 13:旋轉馬達 14:杯體 14a:傾斜部 14b:導引部 14c:受液部 15:升降單元 16:清洗液噴嘴 17:清洗液配管 18:清洗液閥 21:藥液噴嘴 22:噴嘴移動單元 30:藥液供給裝置 31:供給槽 32:循環配管 32a:上游側端部 32b:下游側端部 33:循環泵 34:循環過濾器 35:循環加熱器 40:供給機構 41:送液配管 41a:上游側端部 41b:下游側端部 42:分歧部 43:供給配管 43a:上游側端部 43b:下游側端部 44:返回配管 44a:上游側端部 44b:下游側端部 44c:排出口 45:流量計 46:插入安裝構件 46a:第一構件 46b:第二構件 46c:第三構件 46d:節流部 47:第一閥 48:第二閥 51:回收槽 51a:貫通孔 52:回收配管 52a:上游側端部 52b:下游側端部 53:回收泵 54:回收過濾器 100:基板處理裝置 100a:框體 A1:旋轉軸線 A2:擺動軸線 C:基板收容器 D1:第一直徑 D2:第二直徑 D3第三直徑 D4:第四直徑 D5:第五直徑 CR:中央機器人 IR:索引機器人 LP:裝載埠 P1:第一壓力 P2:第二壓力 P3:第三壓力 Q1:第一方向 Q2:第二方向 Q3:第三方向 R1:第一流路 R2:第二流路 R3:第三流路 θ1:第一角度 θ2:第二角度 TW:塔 X1:第一移動方向 X2:第二移動方向 V1:第一移動速度 V2:第二移動速度 W:基板 Z:滯留端部位置 1: Processing unit 2: Memory unit 3: Control unit 4: Fluid box 4A: First opening 4B: Second opening 4C: Third opening 5: Chemical storage cabinet 6: Chamber 7: FFU (Fan filter unit) 8: Partition wall 9: Gate 10: Rotary chuck 11: Chuck pin 12: Rotary seat 13: Rotary motor 14: Cup body 14a: Inclined part 14b: Guide part 14c: Liquid receiving part 15: Lifting unit 16: Cleaning liquid nozzle 17: Cleaning liquid piping 18: Cleaning liquid valve 21: Chemical nozzle 22: Nozzle moving unit 30: Chemical liquid supply device 31: Supply tank 32: Circulation piping 32a: Upstream side end 32b: Downstream side end 33: Circulation pump 34: Circulation filter 35: Circulation heater 40: Supply mechanism 41: Liquid delivery piping 41a: Upstream side end 41b: Downstream side end 42: Branching section 43: Supply piping 43a: Upstream side end 43b: Downstream side end 44: Return piping 44a: Upstream side end 44b: Downstream side end 44c: Discharge port 45: Flow meter 46: Insertion mounting member 46a: First member 46b: Second member 46c: Third component 46d: Throttling section 47: First valve 48: Second valve 51: Recovery tank 51a: Through hole 52: Recovery piping 52a: Upstream side end 52b: Downstream side end 53: Recovery pump 54: Recovery filter 100: Substrate processing device 100a: Frame A1: Rotation axis A2: Swing axis C: Substrate container D1: First diameter D2: Second diameter D3 Third diameter D4: Fourth diameter D5: Fifth diameter CR: Central robot IR: Index robot LP: Loading port P1: First pressure P2: Second pressure P3: Third pressure Q1: First direction Q2: Second direction Q3: Third direction R1: First flow path R2: Second flow path R3: Third flow path θ1: First angle θ2: Second angle TW: Tower X1: First moving direction X2: Second moving direction V1: First moving speed V2: Second moving speed W: Substrate Z: Retention end position

圖1為示意表示本發明第1實施形態之基板處理裝置之構成的俯視圖。 圖2為示意表示處理單元之構成的側視圖。 圖3為表示藉由基板處理裝置對基板執行處理之一例的流程圖。 圖4為表示藥液供給裝置之構成的示意圖。 圖5為表示供給機構周邊之構成的示意圖。 圖6為插入安裝構件的切斷端面圖。 圖7為表示藥液之壓力的示意圖。 圖8為表示第二閥成為關閉狀態的示意圖。 圖9為表示第二閥成為開放狀態的示意圖。 圖10為表示對基板供給藥液之藥液供給處理中基板處理裝置之動作之一例的流程圖。 圖11為表示對基板供給藥液之藥液供給處理中第一閥之開度、第二閥之開度及流通於藥液噴嘴之藥液流量的時序圖。 圖12為表示第2實施形態之基板處理裝置之藥液供給處理中動作之一例的流程圖。 圖13為表示第2實施形態之基板處理裝置之藥液供給處理中第一閥之開度、第二閥之開度、流通於藥液噴嘴之藥液流量、及藥液噴嘴之位置的時序圖。 圖14為表示本發明第1變形例之基板處理裝置之插入安裝構件周邊的構造圖。 圖15為表示本發明第2變形例之基板處理裝置之供給機構周邊的構造圖。 FIG. 1 is a top view schematically showing the structure of the substrate processing device of the first embodiment of the present invention. FIG. 2 is a side view schematically showing the structure of the processing unit. FIG. 3 is a flow chart showing an example of processing a substrate by the substrate processing device. FIG. 4 is a schematic diagram showing the structure of the liquid supply device. FIG. 5 is a schematic diagram showing the structure of the supply mechanism periphery. FIG. 6 is a cut-off end view of the insertion mounting member. FIG. 7 is a schematic diagram showing the pressure of the liquid. FIG. 8 is a schematic diagram showing the second valve in a closed state. FIG. 9 is a schematic diagram showing the second valve in an open state. FIG. 10 is a flow chart showing an example of the operation of the substrate processing device in the liquid supply process of supplying liquid to the substrate. FIG. 11 is a timing diagram showing the opening of the first valve, the opening of the second valve, and the flow rate of the liquid flowing through the liquid nozzle in the liquid supply process of supplying liquid to the substrate. FIG. 12 is a flow chart showing an example of the action in the liquid supply process of the substrate processing device of the second embodiment. FIG. 13 is a timing diagram showing the opening of the first valve, the opening of the second valve, the flow rate of the liquid flowing through the liquid nozzle, and the position of the liquid nozzle in the liquid supply process of the substrate processing device of the second embodiment. FIG. 14 is a structural diagram showing the periphery of the insertion mounting component of the substrate processing device of the first variant of the present invention. FIG. 15 is a structural diagram showing the periphery of the supply mechanism of the substrate processing device of the second variant of the present invention.

10:旋轉卡盤 10: Rotating chuck

21:藥液噴嘴 21: Liquid spray nozzle

30:藥液供給裝置 30: Liquid medicine supply device

40:供給機構 40: Supply organization

41:送液配管 41: Liquid delivery piping

41a:上游側端部 41a: Upstream end

41b:下游側端部 41b: Downstream end

42:分歧部 42: Division of Divergence

43:供給配管 43: Supply piping

43a:上游側端部 43a: Upstream side end

43b:下游側端部 43b: Downstream end

44:返回配管 44: Return piping

44a:上游側端部 44a: Upstream end

44b:下游側端部 44b: Downstream end

44c:排出口 44c: Exhaust port

45:流量計 45: Flow meter

46:插入安裝構件 46: Insert the mounting components

47:第一閥 47: First valve

48:第二閥 48: Second valve

51:回收槽 51: Recycling tank

52:回收配管 52: Recycling piping

Claims (11)

一種基板處理裝置,其係利用自噴嘴朝向基板供給處理液而對前述基板進行處理者;其具備有:送液配管,其導引前述處理液;供給配管,其將由前述送液配管所導引之前述處理液朝向前述噴嘴導引;返回配管,其沿著與前述供給配管不同之路徑導引由前述送液配管所導引之前述處理液;分歧部,其係前述送液配管、前述供給配管及前述返回配管之分歧點;第一閥,其被設於前述送液配管,可調整自前述送液配管供給至前述分歧部之處理液的流量;第二閥,其被設於前述返回配管;及控制部,其控制前述第一閥及前述第二閥;藉由將前述第一閥設為開放狀態且將前述第二閥設為關閉狀態,以成為吐出狀態,該吐出狀態係使前述處理液自前述送液配管朝向前述供給配管流通而自前述噴嘴吐出前述處理液的狀態,藉由將前述第二閥自關閉狀態設為開放狀態,以成為處理液返回狀態,該處理液返回狀態係使前述處理液自前述供給配管朝向前述返回配管流通的狀態,前述控制部可將前述第一閥之開度至少切換為第一開度及第二開度, 前述第二開度為小於前述第一開度,前述控制部藉由將前述第一閥之開度設為前述第一開度且將前述第二閥設為關閉狀態,以設為前述吐出狀態,且藉由將前述第一閥之開度設為前述第二開度且將前述第二閥設為開放狀態,以設為前述處理液返回狀態。 A substrate processing device processes a substrate by supplying a processing liquid from a nozzle toward the substrate; the device comprises: a liquid supply pipe that guides the processing liquid; a supply pipe that guides the processing liquid guided by the liquid supply pipe toward the nozzle; a return pipe that guides the processing liquid guided by the liquid supply pipe along a path different from that of the supply pipe; a branching portion that is a branching point of the liquid supply pipe, the supply pipe, and the return pipe; a first valve that is disposed on the liquid supply pipe and can adjust the flow rate of the processing liquid supplied from the liquid supply pipe to the branching portion; a second valve that is disposed on the return pipe; and a control portion that controls the first valve and the second valve; by setting the first valve to an open state and the second valve to a closed state, The process is in a discharging state, wherein the treatment liquid flows from the liquid delivery pipe toward the supply pipe and the treatment liquid is discharged from the nozzle. The process is in a return state, wherein the treatment liquid flows from the supply pipe toward the return pipe, by setting the second valve from the closed state to the open state. The control unit can switch the opening of the first valve to at least the first opening and the second opening. The second opening is smaller than the first opening. The control unit sets the first valve to the discharging state by setting the opening of the first valve to the first opening and the second valve to the closed state, and sets the process to the return state by setting the opening of the first valve to the second opening and the second valve to the open state. 如請求項1之基板處理裝置,其中,前述第一閥係於關閉狀態下不完全將前述送液配管之處理液流路關閉之閥。 As in the substrate processing device of claim 1, the first valve is a valve that does not completely close the processing liquid flow path of the liquid delivery pipe when in a closed state. 如請求項1或2之基板處理裝置,其中,供前述處理液通過之流路,其包含有:第一流路,其相對於前述分歧部位於前述送液配管側;第二流路,其相對於前述分歧部位於前述供給配管側;及第三流路,其相對於前述分歧部位於前述返回配管側,且第一角度大於第二角度,前述第二角度係自前述分歧部朝向前述第一流路之第一方向與自前述分歧部朝向前述第二流路之第二方向所夾之角度,前述第一角度係前述第一方向與自前述分歧部朝向前述第三流路之第三方向所夾之角度。 The substrate processing device of claim 1 or 2, wherein the flow path for the processing liquid to pass through includes: a first flow path, which is on the liquid delivery pipe side relative to the branching portion; a second flow path, which is on the supply pipe side relative to the branching portion; and a third flow path, which is on the return pipe side relative to the branching portion, and the first angle is greater than the second angle, the second angle is the angle between the first direction from the branching portion toward the first flow path and the second direction from the branching portion toward the second flow path, and the first angle is the angle between the first direction and the third direction from the branching portion toward the third flow path. 如請求項3之基板處理裝置,其中,前述第一流路及前述第三流路係自前述分歧部朝大致水平方向延伸,前述第二流路係自前述分歧部朝上方延伸。 As in claim 3, the substrate processing device, wherein the first flow path and the third flow path extend from the branch portion in a substantially horizontal direction, and the second flow path extends upward from the branch portion. 如請求項1或2之基板處理裝置,其更具備有:收容槽,其收容來自前述返回配管所供給之前述處理液;前述噴嘴之前端係被配置於較前述返回配管之排出口為高的位置。 The substrate processing device of claim 1 or 2 is further provided with: a receiving tank for receiving the aforementioned processing liquid supplied from the aforementioned return pipe; the front end of the aforementioned nozzle is arranged at a position higher than the discharge port of the aforementioned return pipe. 如請求項1或2之基板處理裝置,其中,於前述送液配管及前述供給配管不設置前述第一閥以外的閥。 A substrate processing device as claimed in claim 1 or 2, wherein no valve other than the first valve is provided in the liquid delivery pipe and the supply pipe. 如請求項1或2之基板處理裝置,其中,前述控制部可將前述第一閥之開度至少切換為前述第一開度、前述第二開度及第三開度,前述第三開度為小於前述第二開度,前述控制部係藉由將前述第一閥之開度自前述第二開度設為前述第三開度,且將前述第二閥保持於前述開放狀態,以設為吐出停止狀態,該吐出停止狀態係使較前述吐出狀態少量之前述處理液自前述送液配管朝向前述返回配管流通的狀態。 In the substrate processing apparatus of claim 1 or 2, the control unit can switch the opening of the first valve to at least the first opening, the second opening and the third opening, the third opening being smaller than the second opening, and the control unit sets the first valve to the ejection stop state by setting the opening of the first valve from the second opening to the third opening and keeping the second valve in the open state, wherein the ejection stop state is a state in which a smaller amount of the processing liquid than the ejection state flows from the liquid delivery pipe toward the return pipe. 如請求項7之基板處理裝置,其更具備有:移動機構,其使前述噴嘴於處理位置與退避位置之間移動;前述處理位置係在前述基板之上方的位置,前述退避位置係在離開前述基板上方的位置,前述控制部控制前述移動機構,前述控制部可將前述第一閥之開度切換為前述第一開度、前述第二開度、前述第三開度及第四開度,前述第四開度為小於前述第一開度,且大於前述第二開度, 前述控制部於將前述噴嘴配置於前述退避位置之狀態下,藉由將前述第一閥之開度自前述第三開度設為前述第四開度且將前述第二閥自前述開放狀態設為前述關閉狀態,以設為預備吐出狀態,該預備吐出狀態係使前述處理液自前述送液配管朝向前述供給配管流通而自前述噴嘴吐出前述處理液的狀態,且於將前述噴嘴配置於前述退避位置之狀態下,藉由將前述第一閥之開度自前述第四開度設為前述第二開度,且將前述第二閥自前述關閉狀態設為前述開放狀態,以設為預備吐出處理液返回狀態,該預備吐出處理液返回狀態係使前述處理液自前述供給配管朝向前述返回配管流通的狀態,且於前述預備吐出處理液返回狀態下前述供給配管內部之前述處理液耗盡之前,藉由使前述噴嘴自前述退避位置移動至前述處理位置,且將前述第一閥之開度自前述第二開度設為前述第一開度,將前述第二閥自前述開放狀態設為前述關閉狀態,以設為前述吐出狀態。 The substrate processing device as claimed in claim 7 is further provided with: a moving mechanism that moves the nozzle between a processing position and a retreat position; the processing position is a position above the substrate, the retreat position is a position away from the substrate, the control unit controls the moving mechanism, the control unit can switch the opening of the first valve to the first opening, the second opening, the third opening and the fourth opening, the fourth opening being smaller than the first opening and larger than the second opening, The control unit, when the nozzle is arranged at the retreat position, sets the opening of the first valve from the third opening to the fourth opening and sets the second valve from the open state to the closed state, so as to set the nozzle to a pre-dispensing state, and the pre-dispensing state is to make the processing liquid from the liquid delivery The pipe flows toward the supply pipe to discharge the treatment liquid from the nozzle, and when the nozzle is arranged in the retreat position, the opening of the first valve is set from the fourth opening to the second opening, and the second valve is set from the closed state to the open state, so as to be set to a preparatory return state for discharging the treatment liquid. The preparatory return state for discharging the treatment liquid is to make the treatment liquid return from the front The supply pipe flows toward the return pipe, and before the treatment liquid in the supply pipe is exhausted in the return state of the prepared treatment liquid, the nozzle is moved from the retreat position to the treatment position, and the opening of the first valve is set from the second opening to the first opening, and the second valve is set from the open state to the closed state, so as to be set to the discharge state. 一種基板處理方法,其係利用自噴嘴朝向基板供給處理液而對前述基板進行處理者;其包含有以下之步驟:藉由將設於送液配管之第一閥設為開放狀態,且將設於與前述送液配管連接之返回配管之第二閥設為關閉狀態,使前述處理液自前述送液配管朝向連接於前述送液配管及前述返回配管、與前述噴嘴之供給配管流通,而自前述噴嘴吐出前述處理液對前述基板進行處理之步驟;及藉由將前述第二閥自前述關閉狀態設為開放狀態,使前述處理液自前述供給配管朝向前述返回配管流通之步驟; 執行藉由將前述第一閥之開度設為第一開度且將前述第二閥設為關閉狀態,而自前述噴嘴吐出前述處理液之步驟,且執行藉由將前述第一閥之開度設為小於前述第一開度之第二開度且將前述第二閥設為開放狀態,而使前述處理液朝向前述返回配管流通之步驟。 A substrate processing method is a method for processing the substrate by supplying a processing liquid from a nozzle toward the substrate; the method comprises the following steps: setting a first valve provided on a liquid supply pipe to an open state, and setting a second valve provided on a return pipe connected to the liquid supply pipe to a closed state, so that the processing liquid flows from the liquid supply pipe toward a supply pipe connected to the liquid supply pipe and the return pipe and to the nozzle, and then discharging the processing liquid from the nozzle to process the substrate. ; and by setting the aforementioned second valve from the aforementioned closed state to the open state, the aforementioned treatment liquid flows from the aforementioned supply pipe toward the aforementioned return pipe; Perform the step of discharging the aforementioned treatment liquid from the aforementioned nozzle by setting the opening of the aforementioned first valve to a first opening and setting the aforementioned second valve to a closed state, and perform the step of flowing the aforementioned treatment liquid toward the aforementioned return pipe by setting the opening of the aforementioned first valve to a second opening smaller than the aforementioned first opening and setting the aforementioned second valve to an open state. 如請求項9之基板處理方法,其更包含以下之步驟:藉由將前述第一閥之開度自前述第二開度設為小於前述第二開度之第三開度,且將前述第二閥保持於前述開放狀態,而使較自前述噴嘴吐出前述處理液之步驟少量之前述處理液自前述送液配管朝前述返回配管流通之步驟。 The substrate processing method of claim 9 further comprises the following step: by setting the opening of the first valve from the second opening to a third opening smaller than the second opening, and keeping the second valve in the open state, a smaller amount of the processing liquid flows from the liquid delivery pipe to the return pipe than the step of ejecting the processing liquid from the nozzle. 如請求項10之基板處理方法,其更包含以下之步驟:於將前述噴嘴配置於離開前述基板之上方的退避位置之狀態下,藉由將前述第一閥之開度自前述第三開度設為小於前述第一開度且大於前述第二開度之第四開度,且將前述第二閥自前述開放狀態設為前述關閉狀態,而使前述處理液自前述送液配管朝前述供給配管流通,自前述噴嘴吐出前述處理液之步驟;於將前述噴嘴配置於前述退避位置之狀態下,藉由將前述第一閥之開度自前述第四開度設為前述第二開度,且將前述第二閥自前述關閉狀態設為前述開放狀態,而使前述處理液自前述供給配管朝向前述返回配管流通之步驟;及於前述供給配管內部之前述處理液耗盡之前,藉由使前述噴嘴自前述退避位置朝向前述基板之上方的處理位置移動,且將前述第一閥之開 度自前述第二開度設為前述第一開度,將前述第二閥自前述開放狀態設為前述關閉狀態,而自前述噴嘴吐出前述處理液對前述基板進行處理之步驟。 The substrate processing method of claim 10 further comprises the following steps: when the nozzle is arranged in a retreat position away from the top of the substrate, the opening of the first valve is set from the third opening to a fourth opening that is smaller than the first opening and larger than the second opening, and the second valve is set from the open state to the closed state, so that the processing liquid flows from the liquid delivery pipe to the supply pipe, and the processing liquid is ejected from the nozzle; when the nozzle is arranged in the retreat position, the opening of the first valve is set from the open state to the closed state. The fourth opening is set to the aforementioned second opening, and the aforementioned second valve is set from the aforementioned closed state to the aforementioned open state, so that the aforementioned processing liquid flows from the aforementioned supply pipe toward the aforementioned return pipe; and before the aforementioned processing liquid in the aforementioned supply pipe is exhausted, the aforementioned nozzle is moved from the aforementioned retreat position toward the processing position above the aforementioned substrate, and the opening of the aforementioned first valve is set from the aforementioned second opening to the aforementioned first opening, and the aforementioned second valve is set from the aforementioned open state to the aforementioned closed state, so that the aforementioned processing liquid is ejected from the aforementioned nozzle to process the aforementioned substrate.
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