TWI847449B - 半導體製造裝置用構件 - Google Patents

半導體製造裝置用構件 Download PDF

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TWI847449B
TWI847449B TW111149864A TW111149864A TWI847449B TW I847449 B TWI847449 B TW I847449B TW 111149864 A TW111149864 A TW 111149864A TW 111149864 A TW111149864 A TW 111149864A TW I847449 B TWI847449 B TW I847449B
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resin porous
porous plug
plug
top surface
semiconductor manufacturing
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井上靖也
久野達也
平田夏樹
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日商日本碍子股份有限公司
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    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
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Abstract

半導體製造裝置用構件10具備：陶瓷板20，在頂面具有晶圓載置面21；及樹脂多孔質插塞50，其頂面50a露出於晶圓載置面21。樹脂多孔質插塞50被壓入固定在將陶瓷板20沿著上下方向貫通的插塞插入孔54，而容許氣體流通。

Description

半導體製造裝置用構件
本發明係關於半導體製造裝置用構件。
習知技術已知具備在頂面具有晶圓載置面的靜電吸盤之構件作為半導體製造裝置用構件。例如，專例文獻1揭露的靜電吸盤具備：陶瓷板，吸附保持晶圓；貫通孔，形成在陶瓷板；及多孔質插塞，配置在貫通孔。為了製造此種靜電吸盤，首先燒成將靜電電極設置在內部的生胚薄片，藉此，製作陶瓷板，而在該陶瓷板形成貫通孔。接下來，將包含陶瓷粒子或燃燒消失粒子的糊狀之陶瓷混合物填充到貫通孔，之後加熱到規定溫度，藉此，燒成混合物中的陶瓷粒子，並且使燃燒消失粒子消失。藉此，在貫通孔內形成有多孔質插塞，而得到上述的靜電吸盤。在此種靜電吸盤，以對於晶圓載置面使晶圓靜電吸附的狀態，對於多孔質插塞從外部導入氦氣。於是，氦氣會供給到晶圓的背面側而改善晶圓與陶瓷板之間的導熱。此時，氦氣通過多孔質插塞的氣孔，故相較於通過多孔質插塞不存在的貫通孔時，可避免在晶圓的背面側產生電弧放電。多孔質插塞不存在的話，伴隨著氦電離所產生的電子會加速而與其他氦氣碰撞，藉此，電弧放電會產生，但多孔質插塞存在的話，電子在與其他氦氣碰撞之前，會先接 觸多孔質插塞，故可避免電弧放電。在晶圓的背面側產生電弧放電的話，晶圓會變質而無法作為裝置利用，故不佳。
〔先前技術文件〕 〔專利文件〕
專利文件1：日本特開2019-29384號公報
然而，在上述的靜電吸盤，燒成工序必須進行2次。也就是說，必須在製作陶瓷板的工序、及製作多孔質插塞的工序之兩個工序中皆進行燒成。因此，有製造成本變高的問題。
本發明係為了解決此種課題而設計，主要目的在於提供具備容許氣體流通的多孔質插塞之價格低廉的半導體製造裝置用構件。
本發明的半導體製造裝置用構件具備：陶瓷板，在頂面具有晶圓載置面；及樹脂多孔質插塞，頂面露出於該晶圓載置面，並被壓入固定在將該陶瓷板沿著上下方向貫通的插塞插入孔，而容許氣體流通。
在此半導體製造裝置用構件，對於將陶瓷板朝向上下方向貫通的插塞插入孔，壓入固定容許氣體流通的樹脂多孔質插塞。因此，不必為了將樹脂多孔質插塞固定在插塞插入孔而進行燒成。又，即使在使用後樹脂多孔質插塞劣化，也可將已劣化的樹脂多孔質插塞輕易更換成新的樹脂多孔質插塞。因此，能夠以低廉價格提供具備多孔質插塞的半導體製造裝置用構件。
尚且，在本說明書，有時使用上下、左右、前後等詞彙說明本發明，但上下、左右、前後僅為相對的位置關係。因此，在半導體製造裝置用構件的方向改變時，上下成為左右，左右成為上下，該種情況也包含在本發明的技術範圍。
在本發明的半導體製造裝置用構件，該陶瓷板可在底面具有導電性基材，該樹脂多孔質插塞可抵接該導電性基材。樹脂多孔質插塞不抵接於導電性基材時，在多孔質插塞與導電性基材之間有時會產生電弧放電，相較之下，樹脂多孔質插塞抵接導電性基材時，可避免產生該種電弧放電。
在本發明的半導體製造裝置用構件，該樹脂多孔質插塞係可將口徑比該樹脂多孔質插塞小的緻密質圓柱構件設置在其內部。如此一來，緻密質圓柱構件會發揮芯材的功能，故較容易將樹脂多孔質插塞壓入插塞插入孔，而可精確決定樹脂多孔質插塞的頂面之高度。
在本發明的半導體製造裝置用構件，該樹脂多孔質插塞係可將口徑比該樹脂多孔質插塞小的緻密質圓筒構件，以從該樹脂多孔質插塞的底面插入且未貫通該樹脂多孔質插塞的頂面之狀態設置在其內部。如此一來，緻密質圓筒構件會發揮芯材的功能，故較容易將樹脂多孔質插塞壓入插塞插入孔，而可精確決 定樹脂多孔質插塞的頂面之高度。又，氣體主要通過樹脂多孔質插塞的上部(比緻密質圓筒構件靠近上側的部分)，故可減少氣體的壓力損失。
在本發明的半導體製造裝置用構件，該樹脂多孔質插塞係可將氣孔率比該樹脂多孔質插塞高的多孔質圓柱構件設置在其內部。如此一來，氣體主要通過多孔質圓柱構件，故可減少氣體的壓力損失。
在本發明的半導體製造裝置用構件，該晶圓載置面可具有支持晶圓的多個小突起，該樹脂多孔質插塞的頂面可位在比該小突起的頂面低的位置。如此一來，即不會以樹脂多孔質插塞的頂面抬升晶圓。此時，該樹脂多孔質插塞的頂面可位在與該晶圓載置面之中未設置該小突起的基準面相同的高度，也可位在比該基準面低0.5mm以下的範圍之位置。如此一來，晶圓的背面與樹脂多孔質插塞的頂面之間的空間之高度會變小，故可避免在此空間產生電弧放電。尚且，基準面的高度可隨著每個小突起而為不同的高度。又，基準面的高度可為與位在插塞插入孔鄰近的小突起之底面相同的高度。
10:半導體製造裝置用構件
20:陶瓷板
21:晶圓載置面
21a:封條固結部位
21b:圓形小突起
21c:基準面
22:電極
24:貫通孔
30:冷卻板
32:冷媒流路
34:氣體孔
34a:孔上部
34b:孔下部
34c:段差部
40:金屬接合層
50:樹脂多孔質插塞
50a:頂面
50b:底面
54:插塞插入孔
90:金屬接合材
92:貫通孔
94:接合體
150:樹脂多孔質插塞
150a:頂面
150b:底面
152:緻密質圓柱構件
250:樹脂多孔質插塞
250a:頂面
250b:底面
252:緻密質圓筒構件
350:樹脂多孔質插塞
350a:頂面
350b:底面
352:多孔質圓柱構件
550:樹脂多孔質插塞
550a:頂面
550b:底面
650:樹脂多孔質插塞
650a:頂面
650b:底面
650c:中間位置
W:晶圓
圖1係半導體製造裝置用構件10的縱剖面圖。
圖2係陶瓷板20的平面圖。
圖3係圖1的部分擴大圖。
圖4A~C係半導體製造裝置用構件10的製造工序圖。
圖5係樹脂多孔質插塞150的縱剖面圖。
圖6係樹脂多孔質插塞250的縱剖面圖。
圖7係樹脂多孔質插塞350的縱剖面圖。
圖8係樹脂多孔質插塞350之另一例的縱剖面圖。
圖9係樹脂多孔質插塞550的縱剖面圖。
圖10係樹脂多孔質插塞650的縱剖面圖。
圖11係樹脂多孔質插塞50之另一例的縱剖面圖。
接下來，針對本發明的適當實施形態，使用圖示予以說明。圖1係半導體製造裝置用構件10的縱剖面圖，圖2係陶瓷板20的平面圖，圖3係圖1的部分擴大圖。
半導體製造裝置用構件10具備：陶瓷板20；冷卻板30；金屬接合層40；及樹脂多孔質插塞50。
陶瓷板20為氧化鋁燒結體或氮化鋁燒結體等的陶瓷製圓板(例如直徑300mm、厚度5mm)。陶瓷板20的頂面成為晶圓載置面21。陶瓷板20係將電極22設置在其內部。在陶瓷板20的晶圓載置面21，如同圖2所示，沿著外緣形成有封條固結部位21a，在整個表面形成有多個圓形小突起21b。封條固結部位21a及圓形小突起21b為同樣高度，其高度例如為數μm~數10μm。電極22為作為靜電電極使用的平面狀之網狀電極，可施加直流電壓。對於此電極22施加直流電壓的話，晶圓W藉由靜電吸附力而被吸附固定在晶圓載置面21(具體而言，封條固結部位21a的頂面及圓形小突起21b的頂面)，解除直流電壓之施加的話，即解除晶圓W對於晶圓載置面21的吸附固定。尚且，將晶圓載置面21之中未設置封條固結部位21a或圓形小突起21b的部分稱為基準面21c。
冷卻板30為熱導率良好的圓板(與陶瓷板20具有相同直徑或者較大直徑的圓板)。在冷卻板30的內部，形成有冷媒循環的冷媒流路32或將氣體朝向樹脂多孔質插塞50供給的氣體孔34。冷媒流路32以在俯視下跨越冷卻板30的整個表面從入口至出口為止一體成形的原則形成。氣體孔34為分段孔，在上部開口緣具備段差部34c。冷卻板30的材料例如舉出金屬材料或金屬矩陣複合材料(MMC)等。作為金屬材料，舉出Al、Ti、Mo或該等的合金等。作為MMC，舉出包含Si、SiC及Ti的材料(也稱為SiSiCTi)或使Al及/或Si含浸在SiC多孔質體的材料等。作為冷卻板30的材料，較佳為選擇與陶瓷板20的材料具有相近熱膨張係數者。冷卻板30也可作為RF電極使用。具體而言，在晶圓載置面21的上方配置上部電極(不圖示)，對於由該上部電極與冷卻板30所構成的平行平板電極間施加高頻電力的話，電漿會產生。
金屬接合層40係與陶瓷板20的底面及冷卻板30的頂面接合。金屬接合層40例如藉由TCB(Thermal compression bonding/熱壓接合)而形成。TCB係一公知之方法，指在接合對象的2個構件之間夾持金屬接合材，並且以加熱到金屬接合材的固相線溫度以下之溫度的狀態將2個構件加壓接合。本實施形態的金屬接合層40及冷卻板30相當於本發明的導電性基材。
樹脂多孔質插塞50被壓入到插塞插入孔54予以固定。插塞插入孔54係將陶瓷板20及金屬接合層40沿著上下方向貫通，並且到達在冷卻板30的氣體孔34之上部開口緣所設置的環狀之段差部34c的圓柱狀之孔洞。插塞插入孔54設置在陶瓷板20的多個處所(例如沿著周方向以等間隔設置的多個處所)。樹脂多孔質插塞50係容許氣體沿著上下方向流通的電絕緣性之樹脂多孔質圓柱構件。作為 樹脂多孔質插塞50，例如可利用PTFE、PPS、PEEK、PEKK等市售的樹脂多孔質體。樹脂多孔質插塞50的頂面50a露出於插塞插入孔54的上部開口，且與基準面21c為同一平面。又，「同一」係指完全同一的情況之外，也包含實質同一的情況(例如位在公差的範圍之情況等)(以下相同)。樹脂多孔質插塞50從插塞插入孔54的上部開口被壓入，直到底面50b抵接形成插塞插入孔54的底面之環狀的段差部34c為止而予以固定。
接下來，說明如此構成的半導體製造裝置用構件10之使用例。首先，在不圖示的腔室內設置半導體製造裝置用構件10的狀態，將晶圓W載置於晶圓載置面21。然後，使腔室內藉由真空泵浦減壓而調整成規定的真空度，對於陶瓷板20的電極22施加直流電壓使靜電吸附力產生，將晶圓W吸附固定在晶圓載置面21(具體而言，封條固結部位21a的頂面或圓形小突起21b的頂面)。接下來，使腔室內成為充滿規定壓力(例如數10~數100Pa)的反應氣體環境，在此狀態下，在腔室內的頂板部分設置的不圖示之上部電極與半導體製造裝置用構件10的冷卻板30之間，施加高頻電壓而使電漿產生。晶圓W的表面藉由已產生的電漿予以處理。在冷卻板30的冷媒流路32有冷媒循環。對於氣體孔34，從不圖示的氣體鋼瓶導入背側氣體。作為背側氣體，使用導熱氣體(例如氦等)。背側氣體經由氣體孔34及樹脂多孔質插塞50，而供給到晶圓W的背面與晶圓載置面21的基準面21c之間的空間予以封入。藉由此背側氣體的存在，而使晶圓W與陶瓷板20之間的導熱有效率地進行。
接下來，針對半導體製造裝置用構件10的製造例基於圖4予以說明。圖4係半導體製造裝置用構件10的製造工序圖。首先，準備陶瓷板20、冷卻板30及金屬接合材90(圖4A)。陶瓷板20係將電極22設置在其內部，並且具備構成插塞 插入孔54的一部分之貫通孔24。冷卻板30係將冷媒流路32設置在其內部，並且具備沿著上下方向貫通的氣體孔34。氣體孔34具備：粗口徑的孔上部34a；細口徑的孔下部34b；及段差部34c，成為孔上部34a與孔下部34b之間的邊界。金屬接合材90具備最終構成插塞插入孔54的一部分之貫通孔92。
然後，將陶瓷板20的底面與冷卻板30的頂面藉由TCB接合而得到接合體94(圖4B)。TCB例如如同以下所進行。首先，在陶瓷板20的底面與冷卻板30的頂面之間夾入金屬接合材90(圖4A)，而成為積層體。此時，以陶瓷板20的貫通孔24、金屬接合材90的貫通孔92、及冷卻板30的氣體孔34成為同軸的方式積層。然後，在金屬接合材90的固相線溫度以下(例如，從固相線溫度扣除20℃而得的溫度以上固相線溫度以下)之溫度將積層體加壓予以接合，之後回復成室温。藉此，金屬接合材90成為金屬接合層40，貫通孔24、92及氣體孔34的孔上部34a成為插塞插入孔54，將陶瓷板20與冷卻板30藉由金屬接合層40予以接合而得到接合體94。作為此時的金屬接合材，可使用Al-Mg系接合材或Al-Si-Mg系接合材。例如，使用Al-Si-Mg系接合材而進行TCB時，在真空環境氣體下加熱的狀態下將積層體加壓。金屬接合材90較佳為使用厚度為100μm左右者。
然後，準備樹脂多孔質插塞50。樹脂多孔質插塞50的直徑比插塞插入孔54的直徑略大。將此樹脂多孔質插塞50從插塞插入孔54的上部開口壓入，直到底面50b抵接形成插塞插入孔54的底面之環狀的段差部34c為止而予以固定。樹脂多孔質插塞50係由於具有比陶瓷材料高的彈性，故可壓入固定。樹脂多孔質插塞50係設計成在底面50b抵接段差部34c的狀態，頂面50a與晶圓載置面21的基準面21c(參考圖3)為同一平面。如此一來，可得到半導體製造裝置用構件10(圖4C)。
在以上詳述的半導體製造裝置用構件10，對於將陶瓷板20朝向上下方向貫通的插塞插入孔54，壓入固定容許氣體流通的樹脂多孔質插塞50。因此，不必為了將樹脂多孔質插塞50固定在插塞插入孔54而進行燒成。又，即使在使用後樹脂多孔質插塞50劣化，也可將已劣化的樹脂多孔質插塞50輕易更換成新的樹脂多孔質插塞50。因此，能夠以低廉價格提供具備多孔質插塞的半導體製造裝置用構件10。
又，在製造工序，最後將樹脂多孔質插塞50壓入固定時，可省略之後的樹脂多孔質插塞50之洗淨工序。
進一步，樹脂多孔質插塞50抵接導電性基材(金屬接合層40及冷卻板30)。樹脂多孔質插塞50不抵接導電性基材時，在樹脂多孔質插塞50與導電性基材之間會產生電弧放電，相較之下，樹脂多孔質插塞50抵接導電性基材時，可避免產生該種電弧放電。
進一步，另外，樹脂多孔質插塞50的頂面50a位在比封條固結部位21a的頂面或圓形小突起21b的頂面低的位置。因此，不會以樹脂多孔質插塞50的頂面50a抬升晶圓W。
然後，樹脂多孔質插塞50的頂面50a位在與晶圓載置面21的基準面21c相同的高度。因此，晶圓W的底面與樹脂多孔質插塞50的頂面50a之間的空間之高度會變小。由此，可避免在此空間產生電弧放電。
尚且，本發明誠然不限定於上述的實施形態，只要屬於本發明的技術範圍，即能夠以各種態樣實施。
取代上述的實施形態之樹脂多孔質插塞50，可使用圖5~圖8所示的樹脂多孔質插塞150~350。
圖5的樹脂多孔質插塞150係將口徑比樹脂多孔質插塞150小的緻密質圓柱構件152設置在其內部。緻密質圓柱構件152係與樹脂多孔質插塞150同軸，從樹脂多孔質插塞150的頂面150a貫通到底面150b為止。此時，緻密質圓柱構件152會發揮芯材的功能，故較容易將樹脂多孔質插塞150壓入插塞插入孔，而可精確決定樹脂多孔質插塞150的頂面之高度。尚且，緻密質圓柱構件152係可在未將樹脂多孔質插塞150朝向上下方向貫通的狀態下設置在其內部。緻密質圓柱構件152的材料若為緻密質則無特別限定，例如可為陶瓷也可為樹脂(例如硬質樹脂)。
圖6的樹脂多孔質插塞250係以將口徑比樹脂多孔質插塞250小的緻密質圓筒構件252，從樹脂多孔質插塞250的底面250b插入且未貫通樹脂多孔質插塞250的頂面250a之狀態設置在其內部。緻密質圓筒構件252係與樹脂多孔質插塞250同軸。此時，緻密質圓筒構件252會發揮芯材的功能，故較容易將樹脂多孔質插塞250壓入插塞插入孔，而可精確決定樹脂多孔質插塞250的頂面之高度。又，氣體主要通過樹脂多孔質插塞250的上部(比緻密質圓筒構件252靠近上側的部分)，故可減少氣體的壓力損失。緻密質圓筒構件252的材料若為緻密質則無特別限定，例如可為陶瓷也可為樹脂(例如硬質樹脂)。
圖7的樹脂多孔質插塞350係將氣孔率比樹脂多孔質插塞350高的多孔質圓柱構件352設置在其內部。多孔質圓柱構件352係與樹脂多孔質插塞350同軸，從樹脂多孔質插塞350的頂面350a貫通到底面350b為止。此時，氣體主要通過多孔質圓柱構件352，故可減少氣體的壓力損失。尚且，多孔質圓柱構件352係如同圖8所示，能夠以不朝向上下方向貫通樹脂多孔質插塞350的狀態，在此為從底面350b插入且未貫通頂面350a的狀態設置在其內部。多孔質圓柱構件352的材料若為多孔質則無特別限定，例如可為陶瓷也可為樹脂。
在上述的實施形態，使用圓柱狀的樹脂多孔質插塞50，也可改用圖9~圖10所示的形狀之樹脂多孔質插塞550、650。
圖9的樹脂多孔質插塞550為底面550b的面積比頂面550a的面積小的逆圓錐體形狀之插塞。使用此樹脂多孔質插塞550時，插塞插入孔也變更成相應的形狀。
圖10的樹脂多孔質插塞650從底面650b到中間位置650c(規定的高度)為止為圓柱形狀，從中間位置650c到頂面650a為止為逆圓錐體形狀的插塞。使用此樹脂多孔質插塞650時，插塞插入孔也變更成相應的形狀。
尚且，可將圖9或圖10的形狀之樹脂多孔質插塞550、650如同圖5~圖8所示變形。
在上述的實施形態，樹脂多孔質插塞50的頂面50a設成具有與晶圓載置面21的基準面21c相同的高度，但並非限定於此。例如，如同圖11所示，從晶圓載置面21的基準面21c之高度扣除樹脂多孔質插塞50的頂面50a之高度所得的差值△h 可為0.5mm以下(較佳為0.2mm以下，更佳為0.1mm以下)的範圍。換言之，可將樹脂多孔質插塞50的頂面50a配置在比晶圓載置面21的基準面21c低0.5mm以下(較佳為0.2mm以下，更佳為0.1mm以下)的範圍之位置。即使如此，也可使晶圓W的底面與樹脂多孔質插塞50的頂面50a之間的空間之高度限制成較低。因此，可避免在此空間產生電弧放電。
在上述的實施形態，作為設置在陶瓷板20的內部之電極22，例示靜電電極，但並非限定於此。例如，取代或者除了電極22，可在陶瓷板20內部設置發熱器電極(電阻發熱體)，也可設置RF電極。
在上述的實施形態，將陶瓷板20與冷卻板30藉由金屬接合層40接合，但可使用樹脂接著層取代金屬接合層40。此時，冷卻板30相當於本發明的導電性基材。
本專利申請案係基於2022年1月7日提出申請的日本國特許出願第2022-001652號主張優先権，藉由引用而將其全部內容包含於本說明書。
10:半導體製造裝置用構件
20:陶瓷板
21:晶圓載置面
22:電極
30:冷卻板
32:冷媒流路
34:氣體孔
34c:段差部
40:金屬接合層
50:樹脂多孔質插塞
50a:頂面
50b:底面
54:插塞插入孔
W:晶圓

Claims (7)

  1. 一種半導體製造裝置用構件，包含：陶瓷板，於其頂面具有晶圓載置面；及樹脂多孔質插塞，其頂面露出於該晶圓載置面，且被壓入固定在將該陶瓷板沿著上下方向貫通的插塞插入孔，並容許氣體流通；該陶瓷板在底面具有導電性基材，該樹脂多孔質插塞抵接於該導電性基材。
  2. 如請求項1的半導體製造裝置用構件，其中該樹脂多孔質插塞係將口徑比該樹脂多孔質插塞小的緻密質圓柱構件設置在其內部。
  3. 如請求項1的半導體製造裝置用構件，其中該樹脂多孔質插塞係將口徑比該樹脂多孔質插塞小的緻密質圓筒構件，以從該樹脂多孔質插塞的底面插入且未貫通該樹脂多孔質插塞的頂面之狀態設置在其內部。
  4. 如請求項1的半導體製造裝置用構件，其中該樹脂多孔質插塞將氣孔比率高於該樹脂多孔質插塞的多孔質圓柱構件設置在其內部。
  5. 如請求項1的半導體製造裝置用構件，其中該晶圓載置面具有支持晶圓的多個小突起， 該樹脂多孔質插塞的頂面位在比該小突起的頂面低的位置。
  6. 如請求項5的半導體製造裝置用構件，其中該樹脂多孔質插塞的頂面位在與該晶圓載置面之中未設置該小突起的基準面相同的高度，或位在比該基準面低0.5mm以下的範圍之位置。
  7. 如請求項1至6中任一項的半導體製造裝置用構件，其中該導電性基材，具有：冷卻板，被設置在該陶瓷板的底面；以及金屬接合層，將該陶瓷板的底面與該冷卻板的頂面接合。
TW111149864A 2022-01-07 2022-12-26 半導體製造裝置用構件 TWI847449B (zh)

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