TWI845668B - 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件 - Google Patents

硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件 Download PDF

Info

Publication number
TWI845668B
TWI845668B TW109114839A TW109114839A TWI845668B TW I845668 B TWI845668 B TW I845668B TW 109114839 A TW109114839 A TW 109114839A TW 109114839 A TW109114839 A TW 109114839A TW I845668 B TWI845668 B TW I845668B
Authority
TW
Taiwan
Prior art keywords
group
ring
resin composition
curable resin
carbon atoms
Prior art date
Application number
TW109114839A
Other languages
English (en)
Chinese (zh)
Other versions
TW202104368A (zh
Inventor
青島俊栄
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202104368A publication Critical patent/TW202104368A/zh
Application granted granted Critical
Publication of TWI845668B publication Critical patent/TWI845668B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12—Unsaturated polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Laminated Bodies (AREA)
  • Polymerisation Methods In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW109114839A 2019-05-08 2020-05-05 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件 TWI845668B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-088585 2019-05-08
JP2019088585 2019-05-08

Publications (2)

Publication Number Publication Date
TW202104368A TW202104368A (zh) 2021-02-01
TWI845668B true TWI845668B (zh) 2024-06-21

Family

ID=73050699

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109114839A TWI845668B (zh) 2019-05-08 2020-05-05 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件

Country Status (3)

Country Link
JP (1) JP7277573B2 (https=)
TW (1) TWI845668B (https=)
WO (1) WO2020226132A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240389227A1 (en) * 2021-04-02 2024-11-21 Jsr Corporation Radiation-sensitive composition for forming insulation film, resin film having pattern, and semiconductor circuit board
CN114524938B (zh) * 2021-10-28 2024-02-09 江苏三月科技股份有限公司 一种聚合物、感光树脂组合物及其制备的固化膜与电子元件
CN120077104A (zh) * 2022-10-31 2025-05-30 富士胶片株式会社 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件
WO2025126934A1 (ja) * 2023-12-12 2025-06-19 富士フイルム株式会社 感光性樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、半導体デバイス、及び、樹脂
WO2025126958A1 (ja) * 2023-12-13 2025-06-19 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、半導体デバイス、及び、樹脂
WO2026070637A1 (ja) * 2024-09-26 2026-04-02 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、半導体デバイス、及び、ポリイミド

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705100A (en) * 2005-03-30 2007-02-01 Nippon Steel Chemical Co Photosensitive resin composition and circuit substrate employing the same
TWI470353B (zh) * 2009-03-26 2015-01-21 Nippon Steel & Sumikin Chem Co A photosensitive resin composition and a hardening film
TW201902991A (zh) * 2017-06-06 2019-01-16 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、半導體裝置及化合物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021540A (en) * 1990-09-18 1991-06-04 American Cyanamid Polyimides from diaminobenzotrifluorides
JPH11193326A (ja) * 1997-12-29 1999-07-21 Chisso Corp ポリアミド酸およびこれを用いたポリイミド液晶配向膜、液晶表示素子
JP2001189109A (ja) 2000-01-05 2001-07-10 Sumitomo Bakelite Co Ltd 絶縁材用樹脂組成物およびこれを用いた絶縁材
JP2004051781A (ja) * 2002-07-19 2004-02-19 Sumitomo Bakelite Co Ltd 絶縁膜用コーティングワニス及び絶縁膜
JP2004055340A (ja) * 2002-07-19 2004-02-19 Sumitomo Bakelite Co Ltd 絶縁膜用コーティングワニス及び絶縁膜
SG11201708251VA (en) * 2015-04-15 2017-11-29 Toray Industries Heat-resistant resin composition, method for manufacturing heat-resistant resin film, method for manufacturing interlayer insulation film or surface protective film, and method for manufacturing electronic component or semiconductor component

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200705100A (en) * 2005-03-30 2007-02-01 Nippon Steel Chemical Co Photosensitive resin composition and circuit substrate employing the same
TWI470353B (zh) * 2009-03-26 2015-01-21 Nippon Steel & Sumikin Chem Co A photosensitive resin composition and a hardening film
TW201902991A (zh) * 2017-06-06 2019-01-16 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、半導體裝置及化合物

Also Published As

Publication number Publication date
WO2020226132A1 (ja) 2020-11-12
TW202104368A (zh) 2021-02-01
JPWO2020226132A1 (https=) 2020-11-12
JP7277573B2 (ja) 2023-05-19

Similar Documents

Publication Publication Date Title
TWI819088B (zh) 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體裝置
TWI845668B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件
TWI886117B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件
TWI851752B (zh) 硬化性樹脂組成物、硬化性樹脂組成物的製造方法、硬化膜、積層體、硬化膜的製造方法及半導體器件
TWI846888B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、半導體器件及聚醯亞胺或聚醯亞胺前驅物
TWI882993B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件
TWI845667B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件
TWI802640B (zh) 感光性樹脂組成物、樹脂、硬化膜、積層體、硬化膜之製造方法、半導體元件
JP7086882B2 (ja) 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、及び、半導体デバイス
TWI886114B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、半導體器件及熱鹼產生劑
JP7477579B2 (ja) 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、及び、ポリマー前駆体
JP2020154205A (ja) パターン形成方法、硬化性樹脂組成物、膜、硬化膜、積層体、及び、半導体デバイス
TWI875714B (zh) 樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體元件
CN112639615A (zh) 感光性树脂组合物、固化膜、层叠体、固化膜的制造方法、半导体元件及热产碱剂
TWI871334B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體器件
TWI856063B (zh) 硬化性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、半導體器件及熱鹼產生劑