TWI839571B - Glass melting furnace and glass manufacturing method - Google Patents

Glass melting furnace and glass manufacturing method Download PDF

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Publication number
TWI839571B
TWI839571B TW109130569A TW109130569A TWI839571B TW I839571 B TWI839571 B TW I839571B TW 109130569 A TW109130569 A TW 109130569A TW 109130569 A TW109130569 A TW 109130569A TW I839571 B TWI839571 B TW I839571B
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glass
melting tank
support
insulator
upper structure
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TW109130569A
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Chinese (zh)
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TW202120443A (en
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松山俊明
内田一樹
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日商Agc股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/02Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
    • C03B5/027Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by passing an electric current between electrodes immersed in the glass bath, i.e. by direct resistance heating
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/02Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
    • C03B5/033Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by using resistance heaters above or in the glass bath, i.e. by indirect resistance heating
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00Drawing glass upwardly from the melt
    • C03B15/02Drawing glass sheets
    • C03B15/12Construction of the annealing tower
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/02Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
    • C03B5/027Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by passing an electric current between electrodes immersed in the glass bath, i.e. by direct resistance heating
    • C03B5/03Tank furnaces
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/235Heating the glass
    • C03B5/2356Submerged heating, e.g. by using heat pipes, hot gas or submerged combustion burners
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/42Details of construction of furnace walls, e.g. to prevent corrosion; Use of materials for furnace walls
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/42Details of construction of furnace walls, e.g. to prevent corrosion; Use of materials for furnace walls
    • C03B5/43Use of materials for furnace walls, e.g. fire-bricks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Vertical, Hearth, Or Arc Furnaces (AREA)

Abstract

本發明之玻璃熔解爐10具備:熔解槽20,其於內部被供給玻璃原料;通電電極50,其設置於熔解槽20之內部;支持構造物40,其設置於熔解槽20之外部;支持單元60,其具有設置於經積層之第一絕緣體62與第二絕緣體63之間之支持板61,將第二絕緣體63固定於支持構造物40;及上部構造物30,其包含具有導電性之磚,經由第一絕緣體62受支持單元60支持並覆蓋熔解槽20之上方。The glass melting furnace 10 of the present invention comprises: a melting tank 20, in which glass raw materials are supplied; a power electrode 50, which is arranged in the melting tank 20; a support structure 40, which is arranged outside the melting tank 20; a support unit 60, which has a support plate 61 arranged between a first insulator 62 and a second insulator 63 of a laminated body, and fixes the second insulator 63 to the support structure 40; and an upper structure 30, which includes a conductive brick, which is supported by the support unit 60 via the first insulator 62 and covers the top of the melting tank 20.

Description

玻璃熔解爐、及玻璃製造方法Glass melting furnace and glass manufacturing method

本發明係關於一種玻璃熔解爐、及玻璃製造方法。The present invention relates to a glass melting furnace and a glass manufacturing method.

作為使玻璃原料熔解之方法之一,有將相互對向之一對電極插入熔解槽內而進行通電之方法。當於電極間施加交流電壓進行通電時,會發生焦耳熱,故玻璃原料被加熱而溫度上升,而可將玻璃原料熔解。玻璃原料之電加熱使用於熔解槽內具有電極之玻璃熔解爐而進行。One method of melting glass raw materials is to insert a pair of electrodes facing each other into a melting tank and apply electricity. When an alternating voltage is applied between the electrodes and electricity is applied, Joule heat is generated, so the glass raw materials are heated and the temperature rises, and the glass raw materials can be melted. Electric heating of glass raw materials is performed using a glass melting furnace with electrodes in the melting tank.

作為如此之玻璃熔解爐之一例,例如於專利文獻1中,揭示一種於熔解槽之上部設置包含橫壁構件與頂部構件之上部構造物者(參照專利文獻1)。  [先前技術文獻]  [專利文獻]As an example of such a glass melting furnace, Patent Document 1 discloses an upper structure including a transverse wall member and a top member provided on the upper part of a melting tank (see Patent Document 1). [Prior Art Document] [Patent Document]

[專利文獻1]日本特開2003-165726號公報[Patent Document 1] Japanese Patent Application Publication No. 2003-165726

[發明所欲解決之課題][The problem that the invention wants to solve]

然而,於具有上部構造物之玻璃熔解爐中,在電加熱時電流不僅於玻璃原料或熔解槽中流動,有時亦於上部構造物流動。若因該電流而於上部構造物發生電位,則發生因在上部構造物內流動之電流所致之焦耳熱損失。因此有能效降低之問題。However, in a glass melting furnace having an upper structure, during electric heating, the current flows not only in the glass raw material or the melting tank, but also in the upper structure. If a potential is generated in the upper structure due to the current, Joule heat loss occurs due to the current flowing in the upper structure. Therefore, there is a problem of reduced energy efficiency.

本發明提供一種可抑制能效之降低之玻璃熔解爐、及玻璃製造方法。  [解決課題之技術手段]The present invention provides a glass melting furnace and a glass manufacturing method that can suppress the reduction of energy efficiency. [Technical means to solve the problem]

本發明之一態樣之玻璃熔解爐具備:熔解槽,其於內部被供給玻璃原料;電極,其設置於前述熔解槽之內部;支持構造物,其設置於前述熔解槽之外部;支持單元,其具有經積層之複數個絕緣體及設置於前述複數個絕緣體之間之支持板,將積層方向之一側之前述絕緣體固定於前述支持構造物;及上部構造物,其包含具有導電性之磚,經由前述積層方向之另一側之前述絕緣體受前述支持單元支持並覆蓋前述熔解槽之上方。  [發明之效果]A glass melting furnace according to one embodiment of the present invention comprises: a melting tank, in which glass raw materials are supplied; an electrode, which is arranged inside the aforementioned melting tank; a supporting structure, which is arranged outside the aforementioned melting tank; a supporting unit, which has a plurality of insulators through layers and a supporting plate arranged between the aforementioned plurality of insulators, and fixes the aforementioned insulators on one side of the stacking direction to the aforementioned supporting structure; and an upper structure, which includes a conductive brick, which is supported by the aforementioned supporting unit through the aforementioned insulators on the other side of the aforementioned stacking direction and covers the top of the aforementioned melting tank. [Effect of the Invention]

本發明之玻璃熔解爐可抑制能效之降低。The glass melting furnace of the present invention can suppress the reduction of energy efficiency.

以下,對於本發明之各種實施形態使用圖式進行說明。Hereinafter, various embodiments of the present invention will be described using drawings.

「第一實施形態」  對於本發明之玻璃熔解爐之第一實施形態,參照圖1及圖2進行說明。"First Implementation Form" The first implementation form of the glass melting furnace of the present invention is described with reference to Figures 1 and 2.

對於玻璃熔解爐10之構造進行說明。The structure of the glass melting furnace 10 will be described.

如圖1所示般,本實施形態之玻璃熔解爐10具備:熔解槽20,其於內部被供給玻璃原料;上部構造物30,其覆蓋熔解槽20之上方;及複數個通電電極50,其等彼此分隔。於熔解槽20之外部,設置支持構造物40。支持構造物40支持上部構造物30。As shown in FIG1 , the glass melting furnace 10 of the present embodiment includes: a melting tank 20 in which glass raw materials are supplied; an upper structure 30 covering the upper part of the melting tank 20; and a plurality of energized electrodes 50 which are separated from each other. A support structure 40 is provided outside the melting tank 20. The support structure 40 supports the upper structure 30.

熔解槽20及上部構造物30具有於X軸方向上延伸之形狀。圖1顯示與X軸方向垂直之面之剖視圖,X軸方向與熔解槽20之長邊方向對應,Y軸方向與熔解槽20之短邊方向對應。圖1之Z軸方向與玻璃熔解爐10之上下方向對應。The melting tank 20 and the upper structure 30 have a shape extending in the X-axis direction. FIG1 shows a cross-sectional view of a plane perpendicular to the X-axis direction, the X-axis direction corresponds to the long side direction of the melting tank 20, and the Y-axis direction corresponds to the short side direction of the melting tank 20. The Z-axis direction of FIG1 corresponds to the up-down direction of the glass melting furnace 10.

玻璃熔解爐10於上部構造物30具備燃燒器(未圖示),藉由燃燒器燃燒、及對通電電極50施加電壓,而將供給至熔解槽20內部之玻璃原料熔解。熔解槽20具備底部21與側壁部22,保持將被供給至內部之玻璃原料熔解而獲得之熔融玻璃G。The glass melting furnace 10 has a burner (not shown) on the upper structure 30, and melts the glass raw material supplied to the melting tank 20 by burning the burner and applying voltage to the power electrode 50. The melting tank 20 has a bottom 21 and a side wall 22, and holds the molten glass G obtained by melting the glass raw material supplied therein.

各通電電極50具有於上下方向上延伸之形狀,以貫通底部21之方式配置。各通電電極50之前端部以插入熔融玻璃G之方式延伸至熔解槽20內。各通電電極50包含導電體,以相對於底部21電性絕緣,另一方面與熔融玻璃G電性導通之方式構成。複數對通電電極50沿著X軸方向而配置。通電電極50之各對以於Y軸方向上彼此對向之方式配置。再者,複數對通電電極亦可沿著Y軸方向而配置。該情形下,通電電極之各對以於X軸方向上彼此對向之方式配置。對於通電電極50之各對,連接有施加交流電壓之電源100。施加於通電電極50之交流電壓,經由通電電極50而施加於熔融玻璃G,故電於熔融玻璃G流動而發生焦耳熱,而將熔融玻璃G加熱。於本實施形態中,由於將通電電極50配置於底部21,故可有效利用熔解槽20下部之空間。Each powered electrode 50 has a shape extending in the up-down direction and is arranged to penetrate the bottom 21. The front end of each powered electrode 50 extends into the melting tank 20 in a manner of inserting the molten glass G. Each powered electrode 50 includes a conductor, which is electrically insulated relative to the bottom 21 and electrically conductive with the molten glass G on the other hand. A plurality of pairs of powered electrodes 50 are arranged along the X-axis direction. Each pair of powered electrodes 50 is arranged to face each other in the Y-axis direction. Furthermore, a plurality of pairs of powered electrodes can also be arranged along the Y-axis direction. In this case, each pair of powered electrodes is arranged to face each other in the X-axis direction. A power source 100 for applying an alternating voltage is connected to each pair of powered electrodes 50. The AC voltage applied to the power electrode 50 is applied to the molten glass G through the power electrode 50, so that the molten glass G flows and generates Joule heat, thereby heating the molten glass G. In this embodiment, since the power electrode 50 is arranged at the bottom 21, the space below the melting tank 20 can be effectively used.

上部構造物30具備:橫壁構件31,其自熔解槽20之側壁部22向上方立起;及頂部構件32,其配置於橫壁構件31之上方。如圖1所示般,於與X軸方向垂直之剖面(紙面中之剖面)中,橫壁構件31上下延伸,頂部構件32具有拱形狀。橫壁構件31於下端具備顎部31a、於上端具備支持頂部構件32之重量並維持頂部構件32之拱形狀之承接部31b。The upper structure 30 includes: a transverse wall member 31, which stands upward from the side wall portion 22 of the melting tank 20; and a top member 32, which is arranged above the transverse wall member 31. As shown in FIG1, in a cross section perpendicular to the X-axis direction (a cross section in the paper), the transverse wall member 31 extends up and down, and the top member 32 has an arch shape. The transverse wall member 31 has a jaw 31a at the lower end and a receiving portion 31b at the upper end to support the weight of the top member 32 and maintain the arch shape of the top member 32.

對於熔解槽20及上部構造物30,作為具有導電性之磚而使用電鑄磚。電鑄磚與煅燒磚相比,相對於以高溫熔解之熔融玻璃G具有較高之耐蝕性,而具有不易污染經熔解之熔融玻璃G之優異之特性。電鑄磚與煅燒磚相比亦具有比電阻更低之特性。Electrocast bricks are used as conductive bricks for the melting tank 20 and the upper structure 30. Electrocast bricks have higher corrosion resistance than calcined bricks to the molten glass G melted at high temperature, and have the excellent property of not easily contaminating the melted molten glass G. Electrocast bricks also have a lower electrical resistance than calcined bricks.

作為電鑄磚,可舉出AZS型電鑄磚、氧化鋯型電鑄磚、或氧化鋁型電鑄磚。又,作為電鑄磚以外之具有導電性之磚,可舉出將磚之表面以鉑、鉑合金、或銥予以覆膜之貴金屬覆膜磚。Examples of electrocast bricks include AZS electrocast bricks, zirconia electrocast bricks, and alumina electrocast bricks. Examples of electrically conductive bricks other than electrocast bricks include precious metal coated bricks in which the surface of the brick is coated with platinum, a platinum alloy, or iridium.

如圖1所示般,於熔解槽20與上部構造物30之間設置高電阻耐火物23,填埋熔解槽20與上部構造物30之間之空間。作為高電阻耐火物23,可舉出稠密鋯石磚、鋯石質磚、或莫來石質磚。此處所言之高電阻,意指1400℃之比電阻為6000 Ω·cm以上。As shown in FIG1 , a high-resistance refractory 23 is provided between the melting tank 20 and the upper structure 30 to fill the space between the melting tank 20 and the upper structure 30. As the high-resistance refractory 23, dense zirconia brick, zirconia brick, or mullite brick can be cited. The high resistance mentioned here means that the specific resistance at 1400°C is 6000 Ω·cm or more.

如圖1所示般,支持構造物40具備:支柱部41,其於上下方向上延伸;及臂部42,其自支柱部41向上部構造物30於水平方向上延伸。臂部42具有支柱部41側之基端部42a、及上部構造物30側之前端部42b。於前端部42b之上部,固定有支持單元60。As shown in FIG1 , the support structure 40 includes a support portion 41 extending in the vertical direction and an arm portion 42 extending in the horizontal direction from the support portion 41 to the upper structure 30. The arm portion 42 has a base end portion 42a on the support portion 41 side and a front end portion 42b on the upper structure 30 side. The support unit 60 is fixed to the upper portion of the front end portion 42b.

於本實施形態中,以於臂部42之前端部42b之上部經由支持單元60載置橫壁構件31之顎部31a,於橫壁構件31之承接部31b載置頂部構件32之方式,支持構造物40支持橫壁構件31,橫壁構件31支持頂部構件32。In this embodiment, the support structure 40 supports the transverse wall member 31, and the transverse wall member 31 supports the top member 32 in such a manner that the jaw 31a of the transverse wall member 31 is placed on the upper part of the front end portion 42b of the arm 42 via the support unit 60, and the top member 32 is placed on the receiving portion 31b of the transverse wall member 31.

支持構造物40於熔解槽20及上部構造物30之周圍形成複數個。各支持構造物40具備支柱部41、及臂部42。於本實施形態中,藉由沿著X軸方向以特定之節距設置複數個支柱部41,而形成複數個支持構造物40。A plurality of support structures 40 are formed around the melting tank 20 and the upper structure 30. Each support structure 40 has a support column 41 and an arm 42. In this embodiment, a plurality of support structures 40 are formed by arranging a plurality of support columns 41 at a specific pitch along the X-axis direction.

在支柱部41為鋼材之情形下,若將複數個支柱部41以10 m以下之節距設置,則可充分地支持上部構造物30之重量。於本實施形態中,作為鋼材而使用H型鋼。When the support column 41 is made of steel, if a plurality of support columns 41 are arranged at a pitch of 10 m or less, the weight of the upper structure 30 can be sufficiently supported. In the present embodiment, H-shaped steel is used as the steel.

相鄰之支柱部41以具有特定間隔之方式形成。相鄰之支柱部41彼此之間之特定間隔,若可於固定於相鄰之支柱部41之各支持單元60彼此確保電性絕緣空間,則可為任意之間隔。The adjacent pillars 41 are formed to have a specific interval. The specific interval between the adjacent pillars 41 can be any interval as long as an electrically insulating space can be ensured between the support units 60 fixed to the adjacent pillars 41.

支持單元60具備包含導電性材料之支持板61、以及第一絕緣體62及第二絕緣體63。支持板61設置於第一絕緣體62與第二絕緣體63之間。於本實施形態中,支持單元60為自上方起依序具有第一絕緣體62、支持板61及第二絕緣體63之三層之積層配置。作為第一絕緣體62及第二絕緣體63之材料,可舉出雲母板、帶狀之玻璃纖維材料、紙狀之玻璃纖維材料、電絕緣性水泥板、或耐火質磚。The support unit 60 has a support plate 61 including a conductive material, and a first insulator 62 and a second insulator 63. The support plate 61 is disposed between the first insulator 62 and the second insulator 63. In the present embodiment, the support unit 60 is a laminated configuration having three layers of the first insulator 62, the support plate 61, and the second insulator 63 in order from the top. As materials for the first insulator 62 and the second insulator 63, mica board, tape-shaped glass fiber material, paper-shaped glass fiber material, electrically insulating cement board, or refractory brick can be cited.

可使第一絕緣體62之電阻值與第二絕緣體63之電阻值不同。於本實施形態中,使第二絕緣體63之電阻值大於第一絕緣體62之電阻值。對於使第一絕緣體62與第二絕緣體63之電阻值不同,只要使積層方向上之厚度、與積層方向垂直之方向上之面積、或絕緣體之材料不同即可。The resistance value of the first insulator 62 can be different from the resistance value of the second insulator 63. In this embodiment, the resistance value of the second insulator 63 is greater than the resistance value of the first insulator 62. To make the resistance values of the first insulator 62 and the second insulator 63 different, it is sufficient to make the thickness in the lamination direction, the area in the direction perpendicular to the lamination direction, or the material of the insulator different.

如後文中說明詳情般,藉由支持單元60之構成,可檢測支持單元60之絕緣特性。As will be described in detail later, the insulating properties of the support unit 60 can be tested by the structure of the support unit 60.

參考圖2對於使用本實施形態之玻璃熔解爐10之玻璃製造方法進行說明。A glass manufacturing method using the glass melting furnace 10 of the present embodiment will be described with reference to FIG. 2 .

將玻璃原料供給至熔解槽20內,對玻璃原料進行加熱而熔解(熔解步驟:S1)。藉由將貫通橫壁構件31或頂部構件32而設置之燃燒器(未圖示)之火炎朝向玻璃原料放射,而自上方加熱玻璃原料。藉由燃燒器之火炎進行加熱,且藉由對複數個通電電極50施加電壓而通電,而發生焦耳熱,從而對玻璃原料進行加熱。The glass raw material is supplied to the melting tank 20, and the glass raw material is heated and melted (melting step: S1). The glass raw material is heated from above by radiating the flame of a burner (not shown) installed through the cross-wall member 31 or the top member 32 toward the glass raw material. The glass raw material is heated by the flame of the burner and by applying voltage to the plurality of energized electrodes 50 to energize, thereby generating Joule heat and heating the glass raw material.

將玻璃原料熔解而獲得之熔融玻璃G在設置於較熔解槽20更下游之成形爐(未圖示)中成形(成形步驟:S2)。經成形之玻璃在設置於較成形爐更下游之緩冷爐(未圖示)被緩冷(緩冷步驟:S3),而成為玻璃產品。The molten glass G obtained by melting the glass raw materials is formed in a forming furnace (not shown) disposed downstream of the melting tank 20 (forming step: S2). The formed glass is slowly cooled in a slow cooling furnace (not shown) disposed downstream of the forming furnace (slow cooling step: S3) to become a glass product.

對於本實施形態之玻璃熔解爐10之絕緣特性檢測方法詳細地進行說明。The method for testing the insulation properties of the glass melting furnace 10 of this embodiment is described in detail.

於熔解步驟S1中,當對熔融玻璃G施加電壓時,電不僅經由熔解槽20、而且經由各種電氣路徑,自熔融玻璃G流向上部構造物30。作為各種電氣路徑,有自熔融玻璃G經由燃燒器之火炎到達上部構造物30之電氣路徑、或自熔融玻璃G經由側壁部22到達上部構造物30之電氣路徑。特別是,由於電鑄磚具有導電性,故若如本實施形態般熔解槽20及上部構造物30包含電鑄磚,則電易於自熔融玻璃G流向上部構造物30。In the melting step S1, when a voltage is applied to the molten glass G, electricity flows from the molten glass G to the upper structure 30 not only through the melting tank 20 but also through various electrical paths. As various electrical paths, there are electrical paths from the molten glass G to the upper structure 30 through the flame of the burner, or from the molten glass G to the upper structure 30 through the side wall portion 22. In particular, since the electrocast bricks have electrical conductivity, if the melting tank 20 and the upper structure 30 include the electrocast bricks as in the present embodiment, electricity easily flows from the molten glass G to the upper structure 30.

當電自熔融玻璃G流向上部構造物30時,上部構造物30相對於接地電位具有高電位。另一方面,由於支持構造物40設置於熔解槽20之外部,故若於支持構造物40使用鋼材,則成為接地電位。When electricity flows from the molten glass G to the upper structure 30, the upper structure 30 has a high potential relative to the ground potential. On the other hand, since the support structure 40 is provided outside the melting tank 20, if a steel material is used for the support structure 40, it becomes a ground potential.

於本實施形態中,於支持單元60設置第一絕緣體62及第二絕緣體63,以不使電流在與接地電位相比成為高電位之上部構造物30與作為接地電位之支持構造物40之間流動。藉由設置第一絕緣體62及第二絕緣體63,將成為高電位之上部構造物30與作為接地電位之支持構造物40之間電性絕緣。In this embodiment, the first insulator 62 and the second insulator 63 are provided on the support unit 60 to prevent current from flowing between the upper structure 30 which is at a higher potential than the ground potential and the support structure 40 which is at the ground potential. By providing the first insulator 62 and the second insulator 63, the upper structure 30 which is at a higher potential and the support structure 40 which is at the ground potential are electrically insulated.

進而,藉由將第一絕緣體62與第二絕緣體63積層配置,而上部構造物30與支持構造物40之間之電阻值因於支持板61使用鋼材,故實質上成為第一絕緣體62之電阻值與第二絕緣體63之電阻值之和。因此,可使上部構造物30與支持構造物40之間具有更高之電阻值,而可進一步抑制能效之降低。Furthermore, by stacking the first insulator 62 and the second insulator 63, the resistance between the upper structure 30 and the support structure 40 becomes substantially the sum of the resistance of the first insulator 62 and the resistance of the second insulator 63 because the support plate 61 uses steel. Therefore, the resistance between the upper structure 30 and the support structure 40 can be made higher, and the reduction of energy efficiency can be further suppressed.

並且,若增大第一絕緣體62及第二絕緣體63之間之電性絕緣距離,而提高上部構造物30與支持構造物40之間之電阻值,則可抑制上部構造物30與支持構造物40之間之火花放電。若抑制火花放電,則可抑制周邊構件之劣化、或能效之降低。Furthermore, by increasing the electrical insulation distance between the first insulator 62 and the second insulator 63 and thereby increasing the resistance between the upper structure 30 and the support structure 40, spark discharge between the upper structure 30 and the support structure 40 can be suppressed. If spark discharge is suppressed, deterioration of peripheral components or reduction in energy efficiency can be suppressed.

於本實施形態中,所謂具有導電性之磚,意指具有與在熔解槽20內熔解之熔融玻璃G相同程度之導電性之磚。因此,若為於上部構造物30包含至少具有導電性之磚之玻璃熔解爐,則因設置上部構造物30所致之焦耳熱損失成為課題。然後,藉由本實施形態可解決該課題。In the present embodiment, the so-called conductive bricks refer to bricks having the same degree of conductivity as the molten glass G melted in the melting tank 20. Therefore, if the glass melting furnace includes at least conductive bricks in the upper structure 30, the Joule heat loss caused by the installation of the upper structure 30 becomes a problem. However, this problem can be solved by the present embodiment.

即便因玻璃原料之附著、堆積物蓄積、濕氣起因等而於任一部位之絕緣體發生絕緣不良,但於本實施形態中,藉由在各支持單元60設置第一絕緣體62及第二絕緣體63,而維持上部構造物30與支持構造物40之間之電性絕緣。另外,藉由於固定於相鄰之支柱部41之各支持單元60彼此確保電性絕緣空間,而可特定出發生絕緣不良之支持單元60。Even if insulation failure occurs in any part of the insulator due to adhesion of glass raw materials, accumulation of deposits, moisture, etc., in this embodiment, the electrical insulation between the upper structure 30 and the support structure 40 is maintained by providing the first insulator 62 and the second insulator 63 in each support unit 60. In addition, by ensuring electrical insulation spaces between the support units 60 fixed to the adjacent support parts 41, the support unit 60 having insulation failure can be specifically identified.

在未發生支持單元60之絕緣不良之情形下,支持單元60之支持板61與上部構造物30及支持構造物40電性絕緣,支持板61之電位維持與接地電位(支持構造物40之電位)及上部構造物30之電位不同之電位。  然而,在發生支持單元60之絕緣不良之情形下,例如若複數個支持單元60中之、任一個支持單元60之第二絕緣體63因絕緣不良而短路,則發生短路之第二絕緣體63上之支持板61成為接地電位。另一方面,由於其他支持單元60之支持板61與發生絕緣不良之第二絕緣體63上之支持板61電性絕緣,故維持高於接地電位之電位。因此,藉由比較複數個支持單元60之各支持板61之電位,而可檢測到於哪一支持單元60發生了異常。為了特定出支持板61之電位,例如測定支持板61對於接地電位(支持構造物40之電位)之電壓。又,作為電位之特定,可測定支持板61對於上部構造物30之電位之電壓、或上部構造物30對於支持板61之電位之電壓。進而,亦可測定第二絕緣體63之電阻值(支持板61與支持構造物40之間之電阻值),特定出第二絕緣體63之絕緣特性而取代電位之特定。In the case where the insulation of the support unit 60 is not poor, the support plate 61 of the support unit 60 is electrically insulated from the upper structure 30 and the support structure 40, and the potential of the support plate 61 is maintained at a potential different from the ground potential (the potential of the support structure 40) and the potential of the upper structure 30. However, in the case where the insulation of the support unit 60 is poor, for example, if the second insulator 63 of any one of the plurality of support units 60 is short-circuited due to poor insulation, the support plate 61 on the short-circuited second insulator 63 becomes the ground potential. On the other hand, since the support plates 61 of other support units 60 are electrically insulated from the support plates 61 on the second insulator 63 where the insulation failure occurs, they maintain a potential higher than the ground potential. Therefore, by comparing the potentials of the support plates 61 of the plurality of support units 60, it is possible to detect which support unit 60 has an abnormality. In order to identify the potential of the support plate 61, for example, the voltage of the support plate 61 relative to the ground potential (the potential of the support structure 40) is measured. In addition, as a method of identifying the potential, the voltage of the support plate 61 relative to the potential of the upper structure 30, or the voltage of the upper structure 30 relative to the potential of the support plate 61 can be measured. Furthermore, the resistance value of the second insulator 63 (the resistance value between the support plate 61 and the support structure 40) can also be measured to identify the insulation characteristics of the second insulator 63 instead of identifying the potential.

相反地,若複數個支持單元60中之、任一支持單元60之第一絕緣體62因絕緣不良而短路,則發生短路之第一絕緣體62下之支持板61成為上部構造物30之電位。另一方面,由於其他支持單元60之支持板61與發生絕緣不良之第一絕緣體62下之支持板61電性絕緣,故維持與接地電位及上部構造物30之電位不同之電位。為了特定出支持板61之電位,而測定支持板61對於上部構造物30之電位之電壓、或上部構造物30對於支持板61之電位之電壓。發生絕緣不良之第一絕緣體62下之支持板61顯示上部構造物30之電位。因此,可檢測於哪一支持單元60發生了異常。當然,測定支持板61對於接地電位(支持構造物40之電位)之電壓亦可檢測出異常。進而,亦可測定第一絕緣體62之電阻值(上部構造物30與支持板61與之間之電阻值)而取代電壓之測定。On the contrary, if the first insulator 62 of any one of the plurality of support units 60 is short-circuited due to poor insulation, the support plate 61 under the short-circuited first insulator 62 becomes the potential of the upper structure 30. On the other hand, since the support plates 61 of the other support units 60 are electrically insulated from the support plate 61 under the poorly-insulated first insulator 62, they maintain a potential different from the ground potential and the potential of the upper structure 30. In order to identify the potential of the support plate 61, the voltage of the support plate 61 to the potential of the upper structure 30 or the voltage of the upper structure 30 to the potential of the support plate 61 is measured. The support plate 61 under the first insulator 62 with poor insulation shows the potential of the upper structure 30. Therefore, it is possible to detect which support unit 60 has an abnormality. Of course, the abnormality can also be detected by measuring the voltage of the support plate 61 with respect to the ground potential (the potential of the support structure 40). Furthermore, the resistance value of the first insulator 62 (the resistance value between the upper structure 30 and the support plate 61) can also be measured instead of measuring the voltage.

即便第二絕緣體63之異常不一定導致短路,但即便僅第二絕緣體63之電阻值變化,支持板61之電位亦變化。因此,即便為支持單元60之第二絕緣體63之電阻值發生變化之程度之異常,亦可檢測於哪一支持單元60發生了異常。對於第一絕緣體62之異常亦同樣。Even though the abnormality of the second insulator 63 does not necessarily cause a short circuit, even if only the resistance value of the second insulator 63 changes, the potential of the support plate 61 also changes. Therefore, even if the abnormality is such that the resistance value of the second insulator 63 of the support unit 60 changes, it is possible to detect which support unit 60 has the abnormality. The same is true for the abnormality of the first insulator 62.

本實施形態之情形下,將第一絕緣體62之電阻值與第二絕緣體63之電阻值設為互不相同之電阻值。因此,即便因玻璃原料之附著、堆積物蓄積、濕氣起因等而於所積層之複數個絕緣體中同時進行絕緣劣化,但可在電阻值高之絕緣體導致絕緣不良之前,檢測電阻值低之絕緣體之絕緣不良。特別是,於本實施形態之情形下,由於使第二絕緣體63之電阻值大於第一絕緣體62之電阻值,故可在第二絕緣體63導致絕緣不良之前,檢測第一絕緣體62。藉由使第二絕緣體63之電阻值大於第一絕緣體62之電阻值,而第一絕緣體62及第二絕緣體63不會同時導致絕緣不良,故可抑制流向上部構造物30之電流或火花放電。In the case of this embodiment, the resistance value of the first insulator 62 and the resistance value of the second insulator 63 are set to different resistance values. Therefore, even if the insulation deteriorates simultaneously in a plurality of stacked insulators due to adhesion of glass raw materials, accumulation of deposits, moisture, etc., the insulation failure of the insulator with a low resistance value can be detected before the insulation failure of the insulator with a high resistance value. In particular, in the case of this embodiment, since the resistance value of the second insulator 63 is set larger than the resistance value of the first insulator 62, the first insulator 62 can be detected before the insulation failure of the second insulator 63. By making the resistance value of the second insulator 63 greater than the resistance value of the first insulator 62, the first insulator 62 and the second insulator 63 will not cause poor insulation at the same time, so the current or spark discharge flowing to the upper structure 30 can be suppressed.

「第二實施方式」  對於本發明之玻璃熔解爐之第二實施形態,參照圖3進行說明。以下,僅說明與第一實施形態不同之點。第二實施形態之玻璃熔解爐10A與第一實施形態在上部構造物及支持構造物之構造上不同。"Second embodiment" The second embodiment of the glass melting furnace of the present invention is described with reference to FIG3. In the following, only the differences from the first embodiment are described. The glass melting furnace 10A of the second embodiment is different from the first embodiment in the structure of the upper structure and the supporting structure.

上部構造物30A具備:橫壁構件31A,自熔解槽20之側壁部22向上方立起;及頂部構件32A,配置於橫壁構件31A之上方。如圖3所示般,於與X軸方向垂直之剖面,橫壁構件31A上下延伸,頂部構件32A具有拱形狀。橫壁構件31A於下端具備顎部31Aa,於上端具備向上方延伸之延伸部31Ab。The upper structure 30A includes: a transverse wall member 31A, which stands upward from the side wall portion 22 of the melting tank 20; and a top member 32A, which is arranged above the transverse wall member 31A. As shown in FIG3, in a cross section perpendicular to the X-axis direction, the transverse wall member 31A extends up and down, and the top member 32A has an arch shape. The transverse wall member 31A has a jaw portion 31Aa at the lower end and an extension portion 31Ab extending upward at the upper end.

如圖3所示般,於延伸部31Ab之上部,設置高電阻耐火物33設置,而填埋橫壁構件31A與頂部構件32A之間之空間。作為高電阻耐火物33,可舉出稠密鋯石磚、鋯石質磚、或莫來石質磚。As shown in Fig. 3, a high-resistance refractory 33 is provided on the upper part of the extension 31Ab to fill the space between the transverse wall member 31A and the top member 32A. As the high-resistance refractory 33, dense zirconia brick, zirconia brick, or mullite brick can be cited.

如圖3所示般,第二實施形態之支持構造物40具備:支柱部41;臂部42,其自支柱部41向上部構造物30A於水平方向上延伸;及臂部43,其形成於臂部42之上方,自支柱部41向上部構造物30A於水平方向上延伸。As shown in FIG. 3 , the support structure 40 of the second embodiment includes: a support portion 41; an arm portion 42 extending horizontally from the support portion 41 to the upper structure 30A; and an arm portion 43 formed above the arm portion 42 and extending horizontally from the support portion 41 to the upper structure 30A.

臂部42具有支柱部41側之基端部42a、及上部構造物30A側之前端部42b。同樣地,臂部43具有支柱部41側之基端部43a、及上部構造物30A側之前端部43b。The arm portion 42 has a base end portion 42a on the support portion 41 side and a front end portion 42b on the upper structure 30A side. Similarly, the arm portion 43 has a base end portion 43a on the support portion 41 side and a front end portion 43b on the upper structure 30A side.

於前端部42b之上部,固定有支持單元60,於前端部43b之上部,固定有支持單元70。A support unit 60 is fixed to the upper portion of the front end portion 42b, and a support unit 70 is fixed to the upper portion of the front end portion 43b.

藉由在臂部42之前端部42b之上部,經由支持單元60載置橫壁構件31A之顎部31Aa,且於臂部43之前端部43b之上部,經由支持單元70載置頂部構件32A之顎部32Aa,而支持構造物40支持上部構造物30A之頂部構件32A及橫壁構件31A。如圖3所示般,支持單元70於與X軸方向垂直之剖面具有L字形狀,維持所載置之頂部構件32A之拱形狀。The support structure 40 supports the top member 32A and the cross-wall member 31A of the upper structure 30A by placing the jaw 31Aa of the cross-wall member 31A on the upper portion of the front end portion 42b of the arm 42 via the support unit 60, and placing the jaw 32Aa of the top member 32A on the upper portion of the front end portion 43b of the arm 43 via the support unit 70. As shown in FIG. 3 , the support unit 70 has an L-shape in a cross section perpendicular to the X-axis direction, and maintains the arch shape of the mounted top member 32A.

支持單元60具備包含導電性材料之支持板61、以及隔著支持板61而積層配置之第一絕緣體62及第二絕緣體63。於本實施形態中,支持單元60亦為自上方起依序具有第一絕緣體62、支持板61及第二絕緣體63之三層之積層配置。支持單元70亦具備包含導電性材料之支持板71、以及隔著支持板71而積層配置之第三絕緣體72及第四絕緣體73。於本實施形態中,支持單元70為自上方起依序具有第三絕緣體72、支持板71及第四絕緣體73之三層之積層配置。The support unit 60 includes a support plate 61 including a conductive material, and a first insulator 62 and a second insulator 63 stacked across the support plate 61. In the present embodiment, the support unit 60 also has a stacked configuration of three layers, namely, the first insulator 62, the support plate 61, and the second insulator 63, in order from the top. The support unit 70 also includes a support plate 71 including a conductive material, and a third insulator 72 and a fourth insulator 73 stacked across the support plate 71. In the present embodiment, the support unit 70 has a stacked configuration of three layers, namely, the third insulator 72, the support plate 71, and the fourth insulator 73, in order from the top.

於本實施形態中,由於橫壁構件31A被支持單元60、頂部構件32A被支持單元70各自分別地支持,故可支持重量更重之上部構造物30A。另外,可檢測於哪一支持單元60及70發生了異常。In this embodiment, since the lateral wall member 31A is supported by the support unit 60 and the top member 32A is supported by the support unit 70, respectively, the upper structure 30A with a heavier weight can be supported. In addition, it is possible to detect which of the support units 60 and 70 has an abnormality.

又,本實施形態之支持構造物40亦於熔解槽20及上部構造物30A之周圍形成複數個。In addition, a plurality of support structures 40 of this embodiment are also formed around the melting tank 20 and the upper structure 30A.

「第三實施形態」  對於本發明之玻璃熔解爐之第三實施形態,參照圖4進行說明。"Third Implementation Form" The third implementation form of the glass melting furnace of the present invention is described with reference to FIG4.

第三實施形態之玻璃熔解爐10B,與第一實施形態在通電電極之構造及配置上不同,複數個通電電極51設置於熔解槽20之側壁部22。通電電極51具有:平面部51a,其具有平面;及貫通部51b,其以貫通側壁部22之方式配置。平面部51a具有與貫通貫通部51b之方向交叉之平面。平面部51a及貫通部51b包含導電體,而彼此電性連接。各通電電極51之平面部51a以插入熔融玻璃G之方式配置於熔解槽20內。以各通電電極51之貫通部51b與側壁部22電性絕緣,另一方面各通電電極51之平面部51a與熔融玻璃G導通之方式構成。於本實施形態中,由於將通電電極51配置於側壁部22,故可有效利用熔解槽20側部之空間。The glass melting furnace 10B of the third embodiment is different from the first embodiment in the structure and arrangement of the power electrodes. A plurality of power electrodes 51 are provided on the side wall portion 22 of the melting tank 20. The power electrode 51 has: a plane portion 51a having a plane; and a through portion 51b, which is arranged in a manner to penetrate the side wall portion 22. The plane portion 51a has a plane intersecting with the direction of the through portion 51b. The plane portion 51a and the through portion 51b include a conductor and are electrically connected to each other. The plane portion 51a of each power electrode 51 is arranged in the melting tank 20 in a manner to insert the molten glass G. The through portion 51b of each power electrode 51 is electrically insulated from the side wall 22, while the flat portion 51a of each power electrode 51 is electrically connected to the molten glass G. In this embodiment, since the power electrode 51 is arranged on the side wall 22, the space on the side of the melting tank 20 can be effectively used.

如圖4所示般,一對通電電極51之平面部51a沿著Y軸方向,以彼此對向之方式配置。又,本實施形態亦具備複數對通電電極51,複數對通電電極51沿著X軸方向配置。As shown in Fig. 4, the planar portions 51a of a pair of power electrodes 51 are arranged to face each other along the Y-axis direction. In addition, the present embodiment also includes a plurality of pairs of power electrodes 51, and the plurality of pairs of power electrodes 51 are arranged along the X-axis direction.

「第四實施形態」  對於本發明之玻璃熔解爐之第四實施形態,參照圖5進行說明。"Fourth Implementation Form" The fourth implementation form of the glass melting furnace of the present invention is described with reference to FIG5.

第四實施形態之玻璃熔解爐10C,與第二實施形態在通電電極之構造及配置上不同。如圖5所示般,第四實施形態之通電電極之構造及配置與第三實施形態之玻璃熔解爐之通電電極之構造及配置相同。The glass melting furnace 10C of the fourth embodiment differs from the second embodiment in the structure and arrangement of the powered electrodes. As shown in FIG5 , the structure and arrangement of the powered electrodes of the fourth embodiment are the same as those of the glass melting furnace of the third embodiment.

於本實施形態中,可獲得下述效果,即:與第二實施形態同樣地,可支持重量更重之上部構造物30A,可檢測於何一支持單元60及70發生了異常,以及與第三實施形態同樣地,可有效利用熔解槽20側部之空間。In this embodiment, the following effects can be obtained, namely, as in the second embodiment, a heavier upper structure 30A can be supported, an abnormality can be detected in which of the support units 60 and 70 occurs, and as in the third embodiment, the space on the side of the melting tank 20 can be effectively utilized.

「第五實施形態」  對於本發明之玻璃熔解爐之第五實施形態,參照圖6進行說明。"Fifth Implementation Form" The fifth implementation form of the glass melting furnace of the present invention is described with reference to FIG6.

第五實施形態之玻璃熔解爐10D,與第一實施形態在通電電極之構造及配置上不同。複數個通電電極53設置於熔解槽20之側壁部22。各通電電極53以貫通側壁部22之方式配置。各通電電極53之前端部以插入熔融玻璃G之方式延伸至熔解槽20內。各通電電極53以與側壁部22電性絕緣,另一方面與熔融玻璃G導通之方式構成。於本實施形態中,由於將通電電極53配置於側壁部22,故可有效利用熔解槽20側部之空間。The glass melting furnace 10D of the fifth embodiment is different from the first embodiment in the structure and arrangement of the powered electrodes. A plurality of powered electrodes 53 are disposed on the side wall portion 22 of the melting tank 20. Each powered electrode 53 is arranged in a manner penetrating the side wall portion 22. The front end portion of each powered electrode 53 extends into the melting tank 20 in a manner of inserting the molten glass G. Each powered electrode 53 is electrically insulated from the side wall portion 22 and is electrically connected to the molten glass G. In this embodiment, since the powered electrodes 53 are arranged on the side wall portion 22, the space on the side of the melting tank 20 can be effectively utilized.

如圖6所示般,一對通電電極53沿著Y軸方向以彼此對向之方式配置。又,本實施形態亦具備複數對通電電極53,複數對通電電極53沿著X軸方向配置。As shown in Fig. 6, a pair of power electrodes 53 are arranged to face each other along the Y-axis direction. In addition, the present embodiment also has a plurality of pairs of power electrodes 53, and the plurality of pairs of power electrodes 53 are arranged along the X-axis direction.

「第六實施形態」  對於本發明之玻璃熔解爐之第六實施形態,參照圖7進行說明。"Sixth Implementation Form" The sixth implementation form of the glass melting furnace of the present invention is described with reference to FIG7.

第六實施形態之玻璃熔解爐10E與第二實施形態在通電電極之構造及配置上不同。如圖7所示般,第六實施形態之通電電極之構造及配置與第五實施形態之玻璃熔解爐10D之通電電極之構造及配置相同。The glass melting furnace 10E of the sixth embodiment differs from the second embodiment in the structure and arrangement of the powered electrodes. As shown in FIG7 , the structure and arrangement of the powered electrodes of the sixth embodiment are the same as those of the glass melting furnace 10D of the fifth embodiment.

於本實施形態中,可獲得下述效果,即:與第二實施形態同樣地,可支持重量更重之上部構造物30A,可檢測於何一支持單元60及70發生了異常,以及與第五實施形態同樣地,可有效利用熔解槽20側部之空間。In this embodiment, the following effects can be obtained, namely, similarly to the second embodiment, a heavier upper structure 30A can be supported, an abnormality can be detected in which of the support units 60 and 70 occurs, and similarly to the fifth embodiment, the space on the side of the melting tank 20 can be effectively utilized.

以上,參照圖式對於本發明之實施形態進行了詳述,但具體性之構成不限於前述實施形態,亦包含不脫離本發明之要旨之範圍之設計變更。The embodiments of the present invention have been described in detail above with reference to the drawings, but the specific configuration is not limited to the aforementioned embodiments and also includes design changes that do not deviate from the gist of the present invention.

本實施形態之玻璃熔解爐10藉由燃燒器加熱及電加熱進行玻璃原料之熔解,但亦可以電加熱單獨地進行玻璃原料之熔解。The glass melting furnace 10 of the present embodiment melts the glass raw materials by burner heating and electric heating, but the glass raw materials may also be melted by electric heating alone.

本實施形態之熔解槽20及上部構造物30為具有朝水平面內之一軸方向較長地延伸之形狀者,但若可將玻璃熔解,則無論為何種形狀皆可。The melting tank 20 and the upper structure 30 of the present embodiment have a shape extending relatively long in one axial direction in the horizontal plane, but any shape is acceptable as long as the glass can be melted.

於本實施形態中,將支持單元60固定於臂部42之前端部42b之上部,但亦可固定於上部構造物30。又,亦可不將支持單元60固定於臂部42之前端部42b抑或上部構造物30,而載置於臂部42之前端部42b。In this embodiment, the support unit 60 is fixed to the upper part of the front end 42b of the arm 42, but it may be fixed to the upper structure 30. In addition, the support unit 60 may be placed on the front end 42b of the arm 42 instead of being fixed to the front end 42b of the arm 42 or the upper structure 30.

於本實施形態中,支持構造物40於熔解槽20及上部構造物30之周圍(至少沿著X軸方向)形成複數個,但若可以單一之支持構造物40支持上部構造物30,則無需設置複數個。進而,支持構造物40不限於具備臂部42及支柱部41者,若為可支持上部構造物30之構造,則無論具有何種構造皆可。In the present embodiment, a plurality of support structures 40 are formed around the melting tank 20 and the upper structure 30 (at least along the X-axis direction), but if a single support structure 40 can support the upper structure 30, it is not necessary to provide a plurality of support structures. Furthermore, the support structure 40 is not limited to one having an arm portion 42 and a support portion 41, and any structure may be used as long as it can support the upper structure 30.

於本實施形態中,於固定於相鄰之支柱部41之各支持單元60彼此確保電性絕緣空間,亦可藉由在各支持單元60之間設置絕緣體而確保電性絕緣。同樣地,亦可於固定於相鄰之支柱部41之各支持單元70之間設置絕緣體。In this embodiment, the support units 60 fixed to the adjacent support parts 41 ensure electrical insulation space, and electrical insulation can also be ensured by providing an insulator between the support units 60. Similarly, an insulator can also be provided between the support units 70 fixed to the adjacent support parts 41.

亦可藉由高電阻耐火物23,將熔解槽20及熔解槽20內之熔融玻璃G與上部構造物30電性絕緣。若將熔解槽20及熔解槽20內之熔融玻璃G與上部構造物30電性絕緣,則可減少電流自熔解槽20及熔解槽20內之熔融玻璃G向上部構造物30之流動。若使用與熔融玻璃G之比電阻相比,具有10倍以上之比電阻之高電阻耐火物23,則可將熔解槽20及熔解槽20內之熔融玻璃G與上部構造物30充分地絕緣,故為較佳。對於高電阻耐火物33亦同樣地,可設為將橫壁構件31A與頂部構件32A電性絕緣者。The melting tank 20 and the molten glass G in the melting tank 20 can also be electrically insulated from the upper structure 30 by the high-resistance refractory 23. If the melting tank 20 and the molten glass G in the melting tank 20 are electrically insulated from the upper structure 30, the flow of current from the melting tank 20 and the molten glass G in the melting tank 20 to the upper structure 30 can be reduced. If a high-resistance refractory 23 having a specific resistance of 10 times or more compared to the specific resistance of the molten glass G is used, the melting tank 20 and the molten glass G in the melting tank 20 can be fully insulated from the upper structure 30, which is preferred. Similarly, the high-resistance refractory 33 can be set to electrically insulate the cross-wall member 31A from the top member 32A.

高電阻耐火物23可將熔解槽20與上部構造物30之間隙氣密地填埋。若將熔解槽20與上部構造物30之間隙設為氣密,則熔解槽20及上部構造物30內部之氣體不易洩漏於外部。對於高電阻耐火物33亦同樣地,可為將橫壁構件31A與頂部構件32A之間隙氣密地填埋者。The high-resistance refractory 23 can fill the gap between the melting tank 20 and the upper structure 30 in an airtight manner. If the gap between the melting tank 20 and the upper structure 30 is made airtight, the gas inside the melting tank 20 and the upper structure 30 is not easily leaked to the outside. Similarly, the high-resistance refractory 33 can be one that fills the gap between the horizontal wall member 31A and the top member 32A in an airtight manner.

於本實施形態中,作為支柱部41之鋼材而使用H型鋼,若為可支持上部構造物30者,亦可為I型鋼、L型鋼、或方鋼。In the present embodiment, H-shaped steel is used as the steel material of the support portion 41, but I-shaped steel, L-shaped steel, or square steel may also be used if it can support the upper structure 30.

於本實施形態中,積層配置二個絕緣體及一個導電性材料,但亦可積層配置三個以上之絕緣體及二個以上之導電性材料。In this embodiment, two insulators and one conductive material are stacked, but three or more insulators and two or more conductive materials may be stacked.

於本實施形態中,對第一及第二實施形態、第三及第四實施形態、及第五及第六實施形態中使用不同之通電電極之形態進行了說明,亦可為組合各通電電極之形態。若為可有效利用熔解槽下部或側部之空間,則可為任意之組合。In this embodiment, the first and second embodiments, the third and fourth embodiments, and the fifth and sixth embodiments use different energizing electrodes, but any combination of energizing electrodes is possible as long as the space at the bottom or side of the melting tank can be effectively utilized.

於本實施形態中使用之玻璃原料之組成上無特別制約,可為蘇打石灰玻璃、無鹼玻璃、混合鹼系玻璃、硼矽酸鹽玻璃、或其他玻璃之任一者。又,所製造之玻璃產品之用途可舉出建築用、車輛用、平板顯示器用、或其他各種用途。The composition of the glass raw materials used in this embodiment is not particularly limited, and can be any of soda lime glass, alkali-free glass, mixed alkali glass, borosilicate glass, or other glasses. In addition, the uses of the manufactured glass products can be cited as construction, vehicle, flat panel display, or other various uses.

本申請案係基於2019年9月11日申請之日本專利申請案2019-165681而成者,其內容作為參考而被納入至此。This application is based on Japanese Patent Application No. 2019-165681 filed on September 11, 2019, the contents of which are incorporated herein by reference.

10,10A,10B,10C,10D,10E:玻璃熔解爐20:熔解槽21:底部22:側壁部23:高電阻耐火物30,30A:上部構造物31,31A:橫壁構件31a,31Aa:顎部31b:承接部31Ab:延伸部32,32A:頂部構件32Aa:顎部33:高電阻耐火物40:支持構造物41:支柱部42:臂部42a:基端部42b:前端部43:臂部43a:基端部43b:前端部50:通電電極51:通電電極51a:平面部51b:貫通部53:通電電極60:支持單元61:支持板62:第一絕緣體63:第二絕緣體70:支持單元71:支持板72:第三絕緣體73:第四絕緣體100:電源G:熔融玻璃S1:熔解步驟S2:成形步驟S3:緩冷步驟X,Y,Z:軸10, 10A, 10B, 10C, 10D, 10E: glass melting furnace 20: melting tank 21: bottom 22: side wall 23: high resistance refractory 30, 30A: upper structure 31, 31A: transverse wall member 31a, 31Aa: jaw 31b: receiving portion 31Ab: extension 32, 32A: top member 32Aa: jaw 33: high resistance refractory 40: support structure 41: support 42: arm 42a: base end 4 2b: front end 43: arm 43a: base end 43b: front end 50: current electrode 51: current electrode 51a: plane portion 51b: through portion 53: current electrode 60: support unit 61: support plate 62: first insulator 63: second insulator 70: support unit 71: support plate 72: third insulator 73: fourth insulator 100: power source G: molten glass S1: melting step S2: forming step S3: slow cooling step X, Y, Z: axis

圖1係本發明之第一實施形態之玻璃熔解爐之X軸垂直面下之剖視圖。  圖2係本發明之第一實施形態之玻璃製造方法之各步驟之流程圖。  圖3係本發明之第二實施形態之玻璃熔解爐之X軸垂直面下之剖視圖。  圖4係本發明之第三實施形態之玻璃熔解爐之X軸垂直面下之剖視圖。  圖5係本發明之第四實施形態之玻璃熔解爐之X軸垂直面下之剖視圖。  圖6係本發明之第五實施形態之玻璃熔解爐之X軸垂直面下之剖視圖。  圖7係本發明之第六實施形態之玻璃熔解爐之X軸垂直面下之剖視圖。Figure 1 is a cross-sectional view of a glass melting furnace of the first embodiment of the present invention taken along a plane perpendicular to the X-axis. Figure 2 is a flow chart of the steps of the glass manufacturing method of the first embodiment of the present invention. Figure 3 is a cross-sectional view of a glass melting furnace of the second embodiment of the present invention taken along a plane perpendicular to the X-axis. Figure 4 is a cross-sectional view of a glass melting furnace of the third embodiment of the present invention taken along a plane perpendicular to the X-axis. Figure 5 is a cross-sectional view of a glass melting furnace of the fourth embodiment of the present invention taken along a plane perpendicular to the X-axis. Figure 6 is a cross-sectional view of a glass melting furnace of the fifth embodiment of the present invention taken along a plane perpendicular to the X-axis. Figure 7 is a cross-sectional view of a glass melting furnace of the sixth embodiment of the present invention taken along a plane perpendicular to the X-axis.

10:玻璃熔解爐 10: Glass melting furnace

20:熔解槽 20: Melting tank

21:底部 21: Bottom

22:側壁部 22: Side wall

23:高電阻耐火物 23: High resistance refractory

30:上部構造物 30: Upper structure

31:橫壁構件 31: Cross wall components

31a:顎部 31a: jaw

31b:承接部 31b: Acceptance Department

32:頂部構件 32: Top component

40:支持構造物 40: Support structure

41:支柱部 41: Support Department

42:臂部 42: Arms

42a:基端部 42a: Base end

42b:前端部 42b: front end

50:通電電極 50:Electrode with power

60:支持單元 60: Support unit

61:支持板 61: Support board

62:第一絕緣體 62: The first insulator

63:第二絕緣體 63: The second insulated body

100:電源 100: Power supply

G:熔融玻璃 G: Molten glass

X,Y,Z:軸 X,Y,Z: axis

Claims (6)

一種玻璃熔解爐,其具備:  熔解槽,其於內部被供給玻璃原料;  電極,其設置於前述熔解槽之內部;  支持構造物,其設置於前述熔解槽之外部;  支持單元,其具有經積層之複數個絕緣體及設置於前述複數個絕緣體之間之支持板,將積層方向之一側之前述絕緣體固定於前述支持構造物;及  上部構造物,其包含具有導電性之磚,經由前述積層方向之另一側之前述絕緣體受前述支持單元支持並覆蓋前述熔解槽之上方。A glass melting furnace comprises: a melting tank, in which glass raw materials are supplied; an electrode, which is arranged in the melting tank; a supporting structure, which is arranged outside the melting tank; a supporting unit, which has a plurality of insulators through layering and a supporting plate arranged between the plurality of insulators, and fixes the insulators on one side of the layering direction to the supporting structure; and an upper structure, which includes conductive bricks, which are supported by the supporting unit through the insulators on the other side of the layering direction and cover the top of the melting tank. 如請求項1之玻璃熔解爐,其中前述上部構造物包含電鑄磚。A glass melting furnace as claimed in claim 1, wherein the upper structure comprises electrocast bricks. 如請求項1或2之玻璃熔解爐,其具備設置於前述熔解槽與前述上部構造物之間之高電阻耐火物。A glass melting furnace as claimed in claim 1 or 2, which is provided with a high-resistance refractory material arranged between the aforementioned melting tank and the aforementioned upper structure. 如請求項1或2之玻璃熔解爐,其中前述上部構造物具備:橫壁構件,其自前述熔解槽之側壁向上方立起;及頂部構件,其配置於該橫壁構件之上方;且  前述支持單元設置複數個,  前述橫壁構件與前述頂部構件受互不相同之前述支持單元支持。A glass melting furnace as claimed in claim 1 or 2, wherein the upper structure comprises: a cross-wall member rising upward from the side wall of the melting tank; and a top member arranged above the cross-wall member; and a plurality of the support units are provided, and the cross-wall member and the top member are supported by different support units. 如請求項1或2之玻璃熔解爐,其中前述複數個絕緣體之電阻值各不相同。A glass melting furnace as claimed in claim 1 or 2, wherein the resistance values of the plurality of insulators are different. 一種玻璃製造方法,其使用請求項1至5中任一項之玻璃熔解爐,且包含:  熔解步驟,其將前述玻璃原料供給至前述熔解槽,藉由對前述電極施加電壓而將前述玻璃原料熔解,而獲得熔融玻璃;  成形步驟,其利用設置於較前述熔解槽更下游之成形爐,將前述熔融玻璃成形;及  緩冷步驟,其利用設置於較前述成形爐更下游之緩冷爐,對經成形之玻璃進行緩冷。A glass manufacturing method, which uses the glass melting furnace of any one of claims 1 to 5, and includes: a melting step, in which the aforementioned glass raw material is supplied to the aforementioned melting tank, and the aforementioned glass raw material is melted by applying a voltage to the aforementioned electrode to obtain molten glass; a forming step, in which the aforementioned molten glass is formed using a forming furnace arranged downstream of the aforementioned melting tank; and a slow cooling step, in which the formed glass is slow cooled using a slow cooling furnace arranged downstream of the aforementioned forming furnace.
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WO2015157349A1 (en) * 2014-04-11 2015-10-15 S&C Electric Company Circuit interrupters with masses in contact spring assemblies
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