TWI838823B - Cleaning method for atmospheric pressure epitaxial reaction chamber and epitaxial silicon wafer - Google Patents
Cleaning method for atmospheric pressure epitaxial reaction chamber and epitaxial silicon wafer Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 132
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004140 cleaning Methods 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 90
- 239000007789 gas Substances 0.000 claims abstract description 57
- 239000012159 carrier gas Substances 0.000 claims abstract description 35
- 230000000630 rising effect Effects 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000012010 growth Effects 0.000 description 5
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
本發明為一種用於常壓外延反應腔室的清潔方法及外延矽片：該清潔方法包括：在刻蝕反應的升溫階段和烘烤階段，載氣以第一氣體流速通入至反應腔室中；在該刻蝕反應的刻蝕階段，該載氣以第二氣體流速與刻蝕氣體通入至該反應腔室中；其中，該第一氣體流速小於該第二氣體流速。The present invention is a cleaning method for a normal pressure epitaxial reaction chamber and an epitaxial silicon wafer: the cleaning method comprises: in the temperature rising stage and baking stage of the etching reaction, the carrier gas is introduced into the reaction chamber at a first gas flow rate; in the etching stage of the etching reaction, the carrier gas is introduced into the reaction chamber with the etching gas at a second gas flow rate; wherein the first gas flow rate is less than the second gas flow rate.
Description
本發明為半導體製造技術領域，尤指一種常壓外延反應腔室的清潔方法及外延矽片。The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a cleaning method for a normal pressure epitaxial reaction chamber and an epitaxial silicon wafer.
作為當今半導體材料領域重要的組成部分，外延矽片可以採用真空外延沉積，減壓外延沉積和常壓外延沉積等方法在拋光矽片基板上沉積一層單晶矽外延層來製備。常壓外延沉積是目前使用最廣泛的一種外延層生長方式。As an important component in the field of semiconductor materials today, epitaxial silicon wafers can be prepared by depositing a single crystal silicon epitaxial layer on a polished silicon wafer substrate using vacuum epitaxial deposition, reduced pressure epitaxial deposition and atmospheric pressure epitaxial deposition. Atmospheric pressure epitaxial deposition is currently the most widely used epitaxial layer growth method.
在常壓外延沉積反應過程中，矽源反應氣體進入反應腔室後，不僅會在拋光矽片基板上生長一層單晶矽外延層，還會在反應腔室內壁上生長一層多晶矽。因此反應腔室在完成外延矽片生長後通常需要進行刻蝕反應，以使得反應腔室內壁上的多晶矽被充分地刻蝕掉從而確保外延矽片的品質穩定。During the atmospheric pressure epitaxial deposition reaction, after the silicon source reaction gas enters the reaction chamber, it will not only grow a single crystal silicon epitaxial layer on the polished silicon wafer substrate, but also grow a layer of polycrystalline silicon on the inner wall of the reaction chamber. Therefore, the reaction chamber usually needs to be etched after the epitaxial silicon wafer growth is completed, so that the polycrystalline silicon on the inner wall of the reaction chamber is fully etched away to ensure the quality of the epitaxial silicon wafer is stable.
有鑒於此，本發明提供一種常壓外延反應腔室的清潔方法及外延矽片；能夠充分刻蝕反應腔室內壁沉積的多晶矽，從而確保外延矽片的平坦度和降低外延矽片表面的粒汙染水準。In view of this, the present invention provides a cleaning method for a normal pressure epitaxial reaction chamber and an epitaxial silicon wafer, which can fully etch the polysilicon deposited on the inner wall of the reaction chamber, thereby ensuring the flatness of the epitaxial silicon wafer and reducing the particle contamination level on the surface of the epitaxial silicon wafer.
本發明的技術方案是這樣實現的：第一方面，本發明提供了一種常壓外延反應腔室的清潔方法，該清潔方法包括：在刻蝕反應的升溫階段和烘烤階段，載氣以第一氣體流速通入至反應腔室中；在該刻蝕反應的刻蝕階段，該載氣以第二氣體流速與刻蝕氣體通入至該反應腔室中；其中，該第一氣體流速小於該第二氣體流速。The technical solution of the present invention is implemented as follows: In the first aspect, the present invention provides a method for cleaning a normal pressure epitaxial reaction chamber, the cleaning method comprising: in the heating stage and the baking stage of the etching reaction, the carrier gas is introduced into the reaction chamber at a first gas flow rate; in the etching stage of the etching reaction, the carrier gas is introduced into the reaction chamber at a second gas flow rate together with the etching gas; wherein the first gas flow rate is less than the second gas flow rate.
第二方面，本發明提供了一種外延矽片，該外延矽片在根據第一方面該的清潔方法清潔後的常壓外延反應腔室中製備而得。In a second aspect, the present invention provides an epitaxial silicon wafer, which is prepared in a normal pressure epitaxial reaction chamber after being cleaned according to the cleaning method of the first aspect.
本發明提供了一種常壓外延反應腔室的清潔方法及外延矽片；在刻蝕反應的升溫階段和烘烤階段，只在反應腔室中通入載氣，且減小載氣的注入速度，以使得載氣在高溫反應腔室中的溫度上升至更高的溫度並將熱量通過熱傳導的方式傳遞給上石英穹頂，在刻蝕階段，刻蝕氣體隨載氣一起進入反應腔室，且為保證反應腔室內有充足的刻蝕氣體，需要增大該刻蝕階段氣體注入速度。The present invention provides a cleaning method for a normal pressure epitaxial reaction chamber and an epitaxial silicon wafer; in the temperature rising stage and baking stage of the etching reaction, only a carrier gas is introduced into the reaction chamber, and the injection speed of the carrier gas is reduced, so that the temperature of the carrier gas in the high temperature reaction chamber rises to a higher temperature and the heat is transferred to the upper quartz dome by heat conduction. In the etching stage, the etching gas enters the reaction chamber together with the carrier gas, and in order to ensure that there is sufficient etching gas in the reaction chamber, the gas injection speed in the etching stage needs to be increased.
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。The technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the present invention.
參見圖1，其示出了能夠實施本發明實施例的常壓外延反應裝置1，該常壓外延反應裝置1可以包括：基座10，該基座10用於承載拋光矽片W；基座支撐架20，該基座支撐架20用於支撐基座10並在外延生長期間驅動基座10以一定速度繞中心軸線X旋轉，其中在基座10的旋轉過程中，拋光矽片W隨基座10一起繞中心軸線X旋轉，也就是說拋光矽片W相對於基座10是保持靜止的，由此，需要基座10的徑向邊緣與相鄰部件10A（通常為預熱環）之間具有較小的間隙G；上石英穹頂30A和下石英穹頂30B，該上石英穹頂30A和該下石英穹頂30B一起圍閉出將基座10以及基座支撐架20容納在其中的反應腔室RC，其中，基座10將反應腔室RC分隔成上反應腔室RC1和下反應腔室RC2，拋光矽片W放置在上反應腔室RC1中；通常，上反應腔室RC1中的氣壓略大於下反應腔室RC2中的氣壓使得上反應腔室RC1中的氣體會經由間隙G進入到下反應腔室RC2中；需要說明的是，反應腔室RC的內壁由側壁a、上石英穹頂30A和下石英穹頂30B組成；進氣口40，該進氣口40用於向上反應腔室RC1中輸送反應氣體，包括矽源氣體、氫氣、摻雜劑氣體，以便通過矽源氣體與氫氣反應生成矽原子並沉積在拋光矽片W上以在拋光矽片W上生長一層外延層，同時通過摻雜劑氣體對外延層進行摻雜以獲得所需的電阻率；排氣口50，該排氣口50用於將反應尾氣排出反應腔室RC；多個加熱燈泡60，該多個加熱燈泡60設置在上石英穹頂30A和下石英穹頂30B的週邊並用於透過上石英穹頂30A和下石英穹頂30B在反應腔室RC中提供用於氣相外延沉積反應的高溫環境，這也是上石英穹頂30A和下石英穹頂30B的材質為透明石英材質的原因；以及用於組裝常壓外延反應裝置1的各個元件的安裝部件70。Referring to FIG. 1 , it shows a normal pressure epitaxial reaction device 1 capable of implementing an embodiment of the present invention. The normal pressure epitaxial reaction device 1 may include: a susceptor 10, the susceptor 10 is used to support a polished silicon wafer W; a susceptor support frame 20, the susceptor support frame 20 is used to support the susceptor 10 and drive the susceptor 10 to rotate around a central axis X at a certain speed during epitaxial growth, wherein during the rotation of the susceptor 10, the polished silicon wafer W rotates around the central axis X together with the susceptor 10, that is, the polished silicon wafer W remains stationary relative to the susceptor 10, thus, the susceptor 10 is required to be fixed to the substrate 10. There is a small gap G between the radial edge of the upper quartz dome 30A and the adjacent component 10A (usually a preheating ring); the upper quartz dome 30A and the lower quartz dome 30B, the upper quartz dome 30A and the lower quartz dome 30B together enclose a reaction chamber RC containing the susceptor 10 and the susceptor support frame 20, wherein the susceptor 10 divides the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, and the polished silicon wafer W is placed in the upper reaction chamber RC1; usually, the air pressure in the upper reaction chamber RC1 is slightly greater than the air pressure in the lower reaction chamber RC2 so that The gas in the upper reaction chamber RC1 will enter the lower reaction chamber RC2 through the gap G; it should be noted that the inner wall of the reaction chamber RC is composed of the side wall a, the upper quartz dome 30A and the lower quartz dome 30B; the gas inlet 40 is used to transport the reaction gas, including the silicon source gas, the hydrogen gas and the dopant gas, into the upper reaction chamber RC1, so that the silicon source gas and the hydrogen gas react to generate silicon atoms and deposit them on the polished silicon wafer W to grow an epitaxial layer on the polished silicon wafer W, and at the same time, the epitaxial layer is doped by the dopant gas to obtain the desired The apparatus 1 includes an exhaust port 50 for exhausting the reaction exhaust gas from the reaction chamber RC; a plurality of heating bulbs 60, which are arranged around the upper quartz dome 30A and the lower quartz dome 30B and are used to provide a high temperature environment for the vapor phase epitaxial deposition reaction in the reaction chamber RC through the upper quartz dome 30A and the lower quartz dome 30B, which is why the material of the upper quartz dome 30A and the lower quartz dome 30B is transparent quartz material; and a mounting component 70 for assembling the various components of the atmospheric pressure epitaxial reaction device 1.
基於該常壓外延反應裝置1中的反應腔室RC連續生產外延矽片的過程中，反應腔室RC每進行一次或多次的外延矽片生長，反應腔室RC需要進行刻蝕（也稱之為“自清潔”），在這個過程中，外延矽片的沉積反應和反應腔室RC的刻蝕反應在反應腔室RC中交替發生。In the process of continuously producing epitaxial silicon wafers in the reaction chamber RC in the atmospheric pressure epitaxial reaction device 1, each time the reaction chamber RC performs one or more epitaxial silicon wafer growths, the reaction chamber RC needs to be etched (also called "self-cleaning"). In this process, the deposition reaction of the epitaxial silicon wafer and the etching reaction of the reaction chamber RC occur alternately in the reaction chamber RC.
此外，在大批量生產過程中，發現更換新的石英穹頂後，石英穹頂使用的時間越久，反應腔室RC製備出的外延矽片的平坦度越差，外延矽片表面顆粒汙染水準越大，同時這也說明反應腔室RC內壁的刻蝕反應不夠充分，導致上石英穹頂30A上殘餘的多晶矽對外延矽片的平坦度產生惡化作用；並且上石英穹頂30A位於外延矽片的正上方，在進行外延生長反應過程中上石英穹頂30A上殘餘的多晶矽會脫落並掉落至外延矽片的表面以使得外延矽片表面的顆粒汙染水準增大。經研究發現，上石英穹頂30A上的多晶矽刻蝕不充分主要是由於在刻蝕反應過程中，當反應腔室RC內部的溫度上升至最高點時，上石英穹頂30A的溫度沒有上升至刻蝕反應的最佳溫度。參見圖2，其示出了相關刻蝕反應各階段上石英穹頂的溫度隨時間變化趨勢示意圖，其中橫座標表示刻蝕反應所用時間，縱座標表示刻蝕反應中上石英穹頂30A的溫度。由圖2可以看出，刻蝕反應包括升溫階段，烘烤階段，刻蝕階段和降溫階段，為了便於識別各階段所用時間，在圖2中採用黑色豎直虛線進行各階段之間的區分。由圖2可以看出，相關刻蝕反應中，升溫階段和烘烤階段的總用時約為145秒(s)；烘烤結束後，在刻蝕初始階段，上石英穹頂30A的溫度為577°C，由於該溫度並不是刻蝕反應的最佳溫度，因此在該溫度下不能夠對上石英穹頂30A進行充分刻蝕。需要說明的是，刻蝕反應的最佳溫度為590°C以上。因此，為了盡可能地刻蝕去除上石英穹頂30A沉積的多晶矽，只能延長刻蝕反應時間，如圖2所示，在整個刻蝕反應階段，以設定的氣體流速通入載氣和刻蝕氣體，刻蝕階段所用時間約為105秒(s)。In addition, during the mass production process, it was found that after replacing the new quartz dome, the longer the quartz dome was used, the worse the flatness of the epitaxial silicon wafer prepared by the reaction chamber RC, and the greater the particle contamination level on the surface of the epitaxial silicon wafer. At the same time, this also shows that the etching reaction of the inner wall of the reaction chamber RC is not sufficient, resulting in the residual polycrystalline silicon on the upper quartz dome 30A to deteriorate the flatness of the epitaxial silicon wafer; and the upper quartz dome 30A is located directly above the epitaxial silicon wafer. During the epitaxial growth reaction, the residual polycrystalline silicon on the upper quartz dome 30A will fall off and fall onto the surface of the epitaxial silicon wafer, thereby increasing the particle contamination level on the surface of the epitaxial silicon wafer. It is found that the inadequate etching of polysilicon on the upper quartz dome 30A is mainly due to the fact that during the etching reaction, when the temperature inside the reaction chamber RC rises to the highest point, the temperature of the upper quartz dome 30A does not rise to the optimal temperature of the etching reaction. See FIG2 , which shows a schematic diagram of the temperature change trend of the upper quartz dome over time at various stages of the relevant etching reaction, wherein the horizontal axis represents the time used for the etching reaction, and the vertical axis represents the temperature of the upper quartz dome 30A during the etching reaction. As can be seen from FIG2, the etching reaction includes a heating stage, a baking stage, an etching stage and a cooling stage. In order to facilitate identification of the time taken for each stage, black vertical dashed lines are used in FIG2 to distinguish between the stages. As can be seen from FIG2, in the relevant etching reaction, the total time taken for the heating stage and the baking stage is about 145 seconds (s); after the baking is completed, in the initial stage of etching, the temperature of the upper quartz dome 30A is 577°C. Since this temperature is not the optimal temperature for the etching reaction, the upper quartz dome 30A cannot be fully etched at this temperature. It should be noted that the optimal temperature for the etching reaction is above 590°C. Therefore, in order to etch and remove the polysilicon deposited on the upper quartz dome 30A as much as possible, the etching reaction time can only be extended. As shown in FIG. 2 , during the entire etching reaction stage, the carrier gas and etching gas are introduced at a set gas flow rate, and the etching stage takes about 105 seconds (s).
需要說明的是，上石英穹頂30A溫度上升的熱量來源有兩種，一種是加熱燈泡60以熱輻射的形式傳遞熱量至上石英穹頂30A，一種是反應腔室RC內的氣體通過熱傳導的形式傳遞熱量至上石英穹頂30A。It should be noted that there are two sources of heat for the temperature rise of the upper quartz dome 30A. One is that the heating bulb 60 transfers heat to the upper quartz dome 30A in the form of thermal radiation, and the other is that the gas in the reaction chamber RC transfers heat to the upper quartz dome 30A in the form of heat conduction.
如上所述，本發明實施例期望在刻蝕反應的不同階段，通過控制通入反應腔室RC載氣的氣體流速來增強氣體熱傳導的溫度，從而提高刻蝕階段初期上石英穹頂30A的溫度，且在該刻蝕反應的不同階段，該反應腔室RC中的壓力保持常壓不變。參見圖3，其示出了本發明實施例提供的一種常壓外延反應腔室的清潔方法，其能夠應用於圖1所示的常壓外延反應裝置1中，該方法包括：S301、在刻蝕反應的升溫階段和烘烤階段，載氣以第一氣體流速通入至反應腔室中；S302、在該刻蝕反應的刻蝕階段，該載氣以第二氣體流速與刻蝕氣體通入至該反應腔室中；其中，該第一氣體流速小於該第二氣體流速。As described above, the embodiment of the present invention is expected to enhance the temperature of gas heat conduction by controlling the gas flow rate of the carrier gas introduced into the reaction chamber RC at different stages of the etching reaction, thereby increasing the temperature of the quartz dome 30A at the early stage of the etching stage, and the pressure in the reaction chamber RC is kept constant at normal pressure at different stages of the etching reaction. Refer to Figure 3, which shows a method for cleaning a normal pressure epitaxial reaction chamber provided by an embodiment of the present invention, which can be applied to the normal pressure epitaxial reaction device 1 shown in Figure 1, and the method includes: S301, in the heating stage and baking stage of the etching reaction, the carrier gas is introduced into the reaction chamber at a first gas flow rate; S302, in the etching stage of the etching reaction, the carrier gas is introduced into the reaction chamber at a second gas flow rate together with the etching gas; wherein the first gas flow rate is less than the second gas flow rate.
對於圖3所示的技術方案，在刻蝕反應的升溫階段和烘烤階段，只在反應腔室RC中通入載氣，且減小載氣的注入速度，以使得載氣在高溫反應腔室RC中的溫度上升至更高的溫度並將熱量通過熱傳導的方式傳遞給上石英穹頂30A，在刻蝕階段，刻蝕氣體隨載氣一起進入反應腔室RC，且為保證反應腔室RC內有充足的刻蝕氣體，需要增大該階段氣體注入速度。For the technical solution shown in FIG. 3 , during the temperature rising stage and baking stage of the etching reaction, only the carrier gas is introduced into the reaction chamber RC, and the injection rate of the carrier gas is reduced, so that the temperature of the carrier gas in the high-temperature reaction chamber RC rises to a higher temperature and the heat is transferred to the upper quartz dome 30A by heat conduction. During the etching stage, the etching gas enters the reaction chamber RC together with the carrier gas, and in order to ensure that there is sufficient etching gas in the reaction chamber RC, the gas injection rate during this stage needs to be increased.
對於圖3所示的技術方案，在一些可能的實現方式中，該載氣為氫氣H 2，該刻蝕氣體為氯化氫HCl氣體。可以理解地，刻蝕氣體採用氯化氫氣體HCl，在刻蝕階段，刻蝕氣體HCl與上石英穹頂30A上沉積的多晶矽在高溫下發生化學反應，生成三氯氫矽SiHCl 3、氯化矽SiCl 4和氫氣H 2的混合物，具體化學反應方程式為： 。這些化學反應生成的混合物會隨著載氣H 2排出反應腔室RC，且不會和載氣H 2發生化學反應。 For the technical solution shown in FIG3 , in some possible implementations, the carrier gas is hydrogen H 2 , and the etching gas is hydrogen chloride HCl gas. It can be understood that the etching gas is hydrogen chloride gas HCl, and in the etching stage, the etching gas HCl reacts with the polysilicon deposited on the upper quartz dome 30A at a high temperature to generate a mixture of trichlorosilane SiHCl 3 , silicon chloride SiCl 4 and hydrogen H 2. The specific chemical reaction equation is: The mixtures generated by these chemical reactions will be discharged from the reaction chamber RC along with the carrier gas H 2 and will not undergo chemical reaction with the carrier gas H 2 .
對於圖3所示的技術方案，在一些可能的實現方式中，在該刻蝕反應的升溫階段和烘烤階段，該載氣的第一氣體流速不大於40公升/每分鐘(L/min)；在該刻蝕反應的刻蝕階段，該載氣的第二氣體流速處於40~60公升/每分鐘(L/min)之間。可以理解地，在本發明實施例中，儘管在升溫階段和烘烤階段，減小了載氣的注入速度；在刻蝕階段，為了保證反應腔室RC內刻蝕氣體的濃度，因此需要加大載氣的注入速度。For the technical solution shown in FIG3 , in some possible implementations, in the temperature rising stage and baking stage of the etching reaction, the first gas flow rate of the carrier gas is no more than 40 liters per minute (L/min); in the etching stage of the etching reaction, the second gas flow rate of the carrier gas is between 40 and 60 liters per minute (L/min). It can be understood that in the embodiment of the present invention, although the injection rate of the carrier gas is reduced in the temperature rising stage and baking stage; in the etching stage, in order to ensure the concentration of the etching gas in the reaction chamber RC, the injection rate of the carrier gas needs to be increased.
可以理解地，整個刻蝕反應包括升溫階段，烘烤階段，刻蝕階段和降溫階段，在本發明實施例中反應腔室RC為常壓反應腔室，也就是說無論如何設定載氣的氣體流速大小，反應腔室RC都要維持在常壓下。因此，若降低載氣的注入速度，為維持反應腔室RC的內部壓力不變，需要減小載氣的排氣速度。如此，載氣進入高溫的反應腔室RC後會停留更久，以使得反應腔室RC內部載氣的溫度會上升至更高。It can be understood that the entire etching reaction includes a temperature rise stage, a baking stage, an etching stage and a temperature drop stage. In the embodiment of the present invention, the reaction chamber RC is a normal pressure reaction chamber, that is, no matter how the gas flow rate of the carrier gas is set, the reaction chamber RC must be maintained at normal pressure. Therefore, if the injection speed of the carrier gas is reduced, in order to maintain the internal pressure of the reaction chamber RC unchanged, the exhaust speed of the carrier gas needs to be reduced. In this way, the carrier gas will stay longer after entering the high-temperature reaction chamber RC, so that the temperature of the carrier gas inside the reaction chamber RC will rise to a higher level.
此外，在刻蝕階段採用第二流速向反應腔室RC中注入載氣和刻蝕氣體，能夠保證刻蝕階段中刻蝕氣體的濃度，進而保證刻蝕效果。In addition, during the etching stage, the carrier gas and the etching gas are injected into the reaction chamber RC at the second flow rate, so that the concentration of the etching gas in the etching stage can be guaranteed, thereby ensuring the etching effect.
需要說明的是，在本發明實施例中，可選地，該第二氣體流速為相關刻蝕反應中設定的氣體流速。It should be noted that, in the embodiment of the present invention, optionally, the second gas flow rate is the gas flow rate set in the relevant etching reaction.
對於圖3所示的技術方案，在一些可能的實現方式中，在該刻蝕反應中，該升溫階段和該烘烤階段的總用時為142秒(s)；且在該刻蝕階段初期，上石英穹頂30A的溫度為596°C。For the technical solution shown in FIG. 3 , in some possible implementations, in the etching reaction, the total time of the heating stage and the baking stage is 142 seconds (s); and at the beginning of the etching stage, the temperature of the upper quartz dome 30A is 596° C.
參見圖4，其示出本發明實施例刻蝕反應不同階段反應腔室RC溫度隨時間的變化趨勢示意圖，其中橫座標表示刻蝕反應所用時間，縱座標表示刻蝕反應中上石英穹頂30A的溫度，且在圖4中採用黑色豎直虛線進行各階段之間的區分。由圖4可以看出，在本發明實施例中，升溫階段和烘烤階段的總用時為142秒(s)，相比於圖2中相關刻蝕反應中升溫階段和烘烤階段的總用時145秒(s)可知，通過本發明實施例提供的清潔方法能夠降低升溫階段和烘烤階段的所用時間。其次，在本發明實施例中，烘烤結束後，在刻蝕階段初期上石英穹頂30A的溫度為596°C，達到了刻蝕反應的最佳溫度，且整個刻蝕階段的時間約為48秒(s)，與圖2中相關刻蝕反應中刻蝕階段所用時間為105秒(s)相比，極大地縮短了刻蝕反應時間，在充分去除上石英穹頂30A上沉積的多晶矽同時，節約了刻蝕時間，提高了刻蝕效率。Referring to FIG. 4 , a schematic diagram showing the variation trend of the RC temperature of the reaction chamber at different stages of the etching reaction in the embodiment of the present invention with time is shown, wherein the horizontal axis represents the time used for the etching reaction, the vertical axis represents the temperature of the upper quartz dome 30A during the etching reaction, and black vertical dashed lines are used in FIG. 4 to distinguish between the various stages. As can be seen from FIG. 4 , in the embodiment of the present invention, the total time used for the heating stage and the baking stage is 142 seconds (s), compared with the total time used for the heating stage and the baking stage in the relevant etching reaction in FIG. 2 of 145 seconds (s), it can be seen that the cleaning method provided by the embodiment of the present invention can reduce the time used for the heating stage and the baking stage. Secondly, in the embodiment of the present invention, after the baking is completed, the temperature of the upper quartz dome 30A at the beginning of the etching stage is 596°C, reaching the optimal temperature for the etching reaction, and the time of the entire etching stage is about 48 seconds (s), compared with the etching stage time of 105 seconds (s) in the relevant etching reaction in FIG. 2, the etching reaction time is greatly shortened, and while fully removing the polycrystalline silicon deposited on the upper quartz dome 30A, the etching time is saved and the etching efficiency is improved.
最後，本發明實施例還提供了一種外延矽片，該外延矽片在由前述技術方案所述的清潔方法清潔後的常壓外延反應腔室中製備得到。Finally, the embodiment of the present invention also provides an epitaxial silicon wafer, which is prepared in a normal pressure epitaxial reaction chamber after being cleaned by the cleaning method described in the aforementioned technical solution.
需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict.
以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以所述權利要求的保護範圍為準。The above is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person familiar with the technical field and with ordinary knowledge within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the above claims.
1:常壓外延反應裝置 10:基座 10A:相鄰部件 20:基座支撐架 30A:上石英穹頂 30B:下石英穹頂 40:進氣口 50:排氣口 60:加熱燈泡 70:安裝部件 W:拋光矽片 X:中心軸線 G:間隙 RC:反應腔室 RC1:上反應腔室 RC2:下反應腔室 a:側壁 S301~S302:方法步驟 1: atmospheric pressure epitaxial reaction device 10: base 10A: adjacent components 20: base support frame 30A: upper quartz dome 30B: lower quartz dome 40: air inlet 50: exhaust port 60: heating bulb 70: mounting components W: polished silicon wafer X: center axis G: gap RC: reaction chamber RC1: upper reaction chamber RC2: lower reaction chamber a: side wall S301~S302: method steps
圖1為本發明提供的一種常壓外延反應裝置結構示意圖； 圖2為本發明提供的相關刻蝕反應各階段上石英穹頂的溫度隨時間變化趨勢示意圖； 圖3為本發明提供的一種常壓外延反應腔室的清潔方法流程示意圖； 圖4為本發明提供的刻蝕反應各階段上石英穹頂的溫度隨時間變化趨勢示意圖。 Figure 1 is a schematic diagram of the structure of a normal pressure epitaxial reaction device provided by the present invention; Figure 2 is a schematic diagram of the temperature change trend of the quartz dome over time at each stage of the relevant etching reaction provided by the present invention; Figure 3 is a schematic diagram of the cleaning method of a normal pressure epitaxial reaction chamber provided by the present invention; Figure 4 is a schematic diagram of the temperature change trend of the quartz dome over time at each stage of the etching reaction provided by the present invention.
S301~S302:方法步驟 S301~S302: Method steps
Claims (5)
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| TW202113506A (en) * | 2019-06-28 | 2021-04-01 | 美商蘭姆研究公司 | Dry chamber clean of photoresist films |
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| US20030216041A1 (en) * | 2002-05-08 | 2003-11-20 | Herring Robert B. | In-situ thermal chamber cleaning |
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| RU2290717C1 (en) * | 2005-06-29 | 2006-12-27 | Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт стали и сплавов" (технологический университет) | Method and device for producing nonplanar epitaxial silicon structures by way of gas-phase epitaxy |
| JP5212144B2 (en) * | 2009-01-30 | 2013-06-19 | 株式会社Ｓｕｍｃｏ | Cleaning method for single-wafer CVD chamber |
| JP5553066B2 (en) * | 2011-09-29 | 2014-07-16 | 信越半導体株式会社 | Epitaxial wafer manufacturing method |
| CN104576307B (en) * | 2013-10-10 | 2017-04-05 | 有研半导体材料有限公司 | It is a kind of to eliminate the method that 12 inches of monocrystalline silicon epitaxial wafer surface microparticles are reunited |
| CN103484933A (en) * | 2013-10-22 | 2014-01-01 | 西安电子科技大学 | Cleaning method for epitaxial chemical vapor deposition (CVD) device |
| KR101810644B1 (en) * | 2016-01-12 | 2018-01-25 | 에스케이실트론 주식회사 | Method of manufacturing an epitaxial wafer |
| CN113035678A (en) * | 2019-12-24 | 2021-06-25 | 东莞新科技术研究开发有限公司 | Cleaning method of etching reaction cavity |
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| CN104282518A (en) * | 2013-07-12 | 2015-01-14 | 中微半导体设备(上海)有限公司 | Cleaning method for plasma treatment device |
| CN112063994A (en) * | 2019-06-10 | 2020-12-11 | Asm Ip私人控股有限公司 | Method for cleaning quartz epitaxial chamber |
| TW202113506A (en) * | 2019-06-28 | 2021-04-01 | 美商蘭姆研究公司 | Dry chamber clean of photoresist films |
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