以下，說明各種例示實施態樣。在說明中，對具有相同元素或是相同功能之元素賦予相同的符號，以省略重複之說明。
Various exemplary implementations are described below. In the description, the same symbols are given to elements with the same elements or the same functions to omit repeated descriptions.
[基板處理系統]
[Substrate processing system]
基板處理系統1係對基板施加以下處理的系統：感光性被覆膜之形成、該感光性被覆膜之曝光、及該感光性被覆膜之顯影。處理對象的基板例如為半導體晶圓W。感光性被覆膜例如為光阻膜。基板處理系統1包含塗佈顯影裝置2及曝光裝置3。曝光裝置3係進行形成在晶圓W(基板)上之光阻膜(感光性被覆膜)的曝光處理。具體而言，曝光裝置3係藉由液浸曝光等方法，而對光阻膜之曝光對象部分照射能量線。塗佈顯影裝置2係在藉由曝光裝置3所進行之曝光處理前，進行在晶圓W(基板)之表面形成光阻膜的處理，並在曝光處理後進行光阻膜的顯影處理。
The substrate processing system 1 is a system for applying the following processing to the substrate: formation of a photosensitive coating film, exposure of the photosensitive coating film, and development of the photosensitive coating film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating film is, for example, a photoresist film. The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 performs an exposure process of the photoresist film (photosensitive coating film) formed on the wafer W (substrate). Specifically, the exposure device 3 irradiates the exposure target portion of the photoresist film with energy rays by a method such as liquid immersion exposure. The coating and developing device 2 performs a process of forming a photoresist film on the surface of the wafer W (substrate) before the exposure process performed by the exposure device 3, and performs a development process of the photoresist film after the exposure process.
[基板處理裝置]
[Substrate processing equipment]
以下，作為基板處理裝置之一例，係說明塗佈顯影裝置2之構成。如圖1及圖2所示，塗佈顯影裝置2包含：載具區塊4、處理區塊5、介面區塊6、拋光單元20及控制裝置100(控制部)。
The following describes the structure of the coating and developing device 2 as an example of a substrate processing device. As shown in FIG. 1 and FIG. 2 , the coating and developing device 2 includes: a carrier block 4, a processing block 5, an interface block 6, a polishing unit 20, and a control device 100 (control unit).
載具區塊4係進行往塗佈顯影裝置2內導入晶圓W、及從塗佈顯影裝置2內導出晶圓W。例如，載具區塊4可支撐晶圓W用之複數載具C，並內建有傳遞臂A1。載具C例如收納圓形之複數片晶圓W。傳遞臂A1係從載具C取出晶圓W，再傳遞至處理區塊5，並從處理區塊5承接晶圓W，再送回載具C內。
The carrier block 4 is used to import wafers W into the coating and developing device 2 and to export wafers W from the coating and developing device 2. For example, the carrier block 4 can support multiple carriers C for wafers W and has a built-in transfer arm A1. The carrier C can store multiple round wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier C, transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier C.
處理區塊5包含複數處理模組11、12、13、14。處理模組11、12、13內建有：塗佈單元U1、熱處理單元U2、及將晶圓W搬運至該等單元的搬運臂A3。
Processing block 5 includes a plurality of processing modules 11, 12, 13, and 14. Processing modules 11, 12, and 13 have built-in coating units U1, thermal treatment units U2, and transfer arms A3 for transferring wafers W to these units.
處理模組11係藉由塗佈單元U1及熱處理單元U2，而在晶圓W的表面上形成下層膜。處理模組11的塗佈單元U1係將下層膜形成用的處理液塗佈於晶圓W上。處理模組11的熱處理單元U2係進行伴隨下層膜之形成的各種熱處理。
The processing module 11 forms a lower film on the surface of the wafer W by means of a coating unit U1 and a heat treatment unit U2. The coating unit U1 of the processing module 11 coats the processing liquid for forming the lower film on the wafer W. The heat treatment unit U2 of the processing module 11 performs various heat treatments accompanying the formation of the lower film.
處理模組12係藉由塗佈單元U1及熱處理單元U2，而在下層膜上形成光阻膜。處理模組12的塗佈單元U1係將光阻膜形成用的處理液塗佈於下層膜上。處理模組12的熱處理單元U2係進行伴隨光阻膜之形成的各種熱處理。
The processing module 12 forms a photoresist film on the lower film by means of a coating unit U1 and a heat treatment unit U2. The coating unit U1 of the processing module 12 coats the processing liquid for forming the photoresist film on the lower film. The heat treatment unit U2 of the processing module 12 performs various heat treatments accompanying the formation of the photoresist film.
處理模組13係藉由塗佈單元U1及熱處理單元U2，而在光阻膜上形成上層膜。處理模組13的塗佈單元U1係將上層膜形成用的液體塗佈於光阻膜上。處理模組13的熱處理單元U2係進行伴隨上層膜之形成的各種熱處理。
The processing module 13 forms an upper film on the photoresist film by means of a coating unit U1 and a heat treatment unit U2. The coating unit U1 of the processing module 13 coats the liquid for forming the upper film on the photoresist film. The heat treatment unit U2 of the processing module 13 performs various heat treatments accompanying the formation of the upper film.
處理模組14係內建有顯影單元U3、熱處理單元U4、及將晶圓W搬運至該等單元的搬運臂A3。處理模組14係藉由顯影單元U3及熱處理單元U4，而進行曝光後之光阻膜的顯影處理。顯影單元U3係在將顯影液塗佈於曝光完成之晶圓W的表面上之後，藉由沖洗液洗掉該顯影液，藉此進行光阻膜的顯影處理。熱處理單元U4係進行伴隨顯影處理的各種熱處理。作為熱處理的具體例可列舉：顯影處理前的加熱處理(PEB：Post Exposure Bake，曝光後烘烤)、顯影處理後的加熱處理(PB：Post Bake，後烘烤)等。
The processing module 14 has a built-in developing unit U3, a heat treatment unit U4, and a transfer arm A3 for transporting the wafer W to these units. The processing module 14 performs a development process on the photoresist film after exposure through the developing unit U3 and the heat treatment unit U4. The developing unit U3 applies a developer to the surface of the exposed wafer W and then washes off the developer with a rinse solution to perform a development process on the photoresist film. The heat treatment unit U4 performs various heat treatments accompanying the development process. Specific examples of heat treatment include: heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), etc.
在處理區塊5內的載具區塊4側設有棚單元U10。棚單元U10係區劃成在上下方向上並列的複數格子(cell)。在棚單元U10的附近設有升降臂A7。升降臂A7係使晶圓W在棚單元U10的格子彼此間升降。
A shelf unit U10 is provided on the side of the carrier block 4 in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in parallel in the vertical direction. A lifting arm A7 is provided near the shelf unit U10. The lifting arm A7 lifts and lowers the wafer W between the cells of the shelf unit U10.
在處理區塊5內的介面區塊6側設有棚單元U11。棚單元U11係區劃成在上下方向上並列的複數格子。
A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of grids arranged in parallel in the vertical direction.
介面區塊6係在與曝光裝置3之間，進行晶圓W的傳遞。又，在本發明之實施態樣中，係在介面區塊6內配置有拋光晶圓W的拋光單元20。例如，介面區塊6係內建有傳遞臂A8，並與曝光裝置3連接。傳遞臂A8係將配置於棚單元U11的晶圓W搬運至拋光單元20，並將藉由拋光單元20拋光後之晶圓W傳遞至曝光裝置3。傳遞臂A8係從曝光裝置3承接晶圓W，再送回棚單元U11。
The interface block 6 is used to transfer wafer W between the exposure device 3. In addition, in the embodiment of the present invention, a polishing unit 20 for polishing wafer W is arranged in the interface block 6. For example, the interface block 6 is built with a transfer arm A8 and is connected to the exposure device 3. The transfer arm A8 transports the wafer W arranged in the shed unit U11 to the polishing unit 20, and transfers the wafer W polished by the polishing unit 20 to the exposure device 3. The transfer arm A8 receives the wafer W from the exposure device 3 and sends it back to the shed unit U11.
控制裝置100例如控制塗佈顯影裝置2，而藉由以下步驟執行塗佈顯影處理。首先，控制裝置100控制傳遞臂A1，將載具C內的晶圓W搬運至棚單元U10，並控制升降臂A7，將此晶圓W配置於處理模組11用的格子。
The control device 100 controls the coating and developing device 2, for example, and performs coating and developing processing by the following steps. First, the control device 100 controls the transfer arm A1 to transport the wafer W in the carrier C to the shelf unit U10, and controls the lifting arm A7 to arrange the wafer W in the grid for the processing module 11.
接著，控制裝置100控制搬運臂A3，將棚單元U10的晶圓W搬運至處理模組11內的塗佈單元U1及熱處理單元U2。又，控制裝置100控制塗佈單元U1及熱處理單元U2，在此晶圓W的表面上形成下層膜。其後，控制裝置100控制搬運臂A3，將形成有下層膜之晶圓W送回棚單元U10，並控制升降臂A7，將此晶圓W配置於處理模組12用的格子。
Next, the control device 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11. In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a lower film on the surface of the wafer W. Afterwards, the control device 100 controls the transfer arm A3 to return the wafer W with the lower film to the shelf unit U10, and controls the lifting arm A7 to place the wafer W in the grid for the processing module 12.
接著，控制裝置100控制搬運臂A3，將棚單元U10之晶圓W搬運至處理模組12內的塗佈單元U1及熱處理單元U2。又，控制裝置100控制塗佈單元U1及熱處理單元U2，在此晶圓W之下層膜上形成光阻膜。其後，控制裝置100控制搬運臂A3，將晶圓W送回棚單元U10，並控制升降臂A7，將此晶圓W配置於處理模組13用的格子。
Next, the control device 100 controls the transfer arm A3 to transfer the wafer W from the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12. In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a photoresist film on the lower film of the wafer W. Afterwards, the control device 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lifting arm A7 to place the wafer W in the grid for the processing module 13.
接著，控制裝置100控制搬運臂A3，將棚單元U10之晶圓W搬運至處理模組13內的各單元。又，控制裝置100控制塗佈單元U1及熱處理單元U2，在此晶圓W之光阻膜上形成上層膜。其後，控制裝置100控制搬運臂A3，將晶圓W搬運至棚單元U11。
Next, the control device 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to each unit in the processing module 13. In addition, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper film on the photoresist film of the wafer W. Afterwards, the control device 100 controls the transfer arm A3 to transfer the wafer W to the shelf unit U11.
接著，控制裝置100控制傳遞臂A8，將棚單元U11之晶圓W搬入拋光單元20，並將藉由拋光單元20拋光後之晶圓W送出至曝光裝置3。其後，控制裝置100控制傳遞臂A8，從曝光裝置3承接施加過曝光處理之晶圓W，再配置於棚單元U11中的處理模組14用之格子。
Next, the control device 100 controls the transfer arm A8 to move the wafer W from the shed unit U11 into the polishing unit 20, and sends the wafer W polished by the polishing unit 20 to the exposure device 3. Afterwards, the control device 100 controls the transfer arm A8 to receive the wafer W subjected to the exposure process from the exposure device 3, and then arranges it in the grid for the processing module 14 in the shed unit U11.
接著，控制裝置100控制搬運臂A3，將棚單元U11之晶圓W搬運至處理模組14內的各單元，並控制顯影單元U3及熱處理單元U4，對此晶圓W之光阻膜施加顯影處理。其後，控制裝置100控制搬運臂A3，將晶圓W送回棚單元U10，並控制升降臂A7及傳遞臂A1，將此晶圓W送回載具C內。以上，便完成塗佈顯影處理。
Next, the control device 100 controls the transport arm A3 to transport the wafer W from the shelf unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to apply the developing process to the photoresist film of the wafer W. Afterwards, the control device 100 controls the transport arm A3 to send the wafer W back to the shelf unit U10, and controls the lifting arm A7 and the transfer arm A1 to send the wafer W back to the carrier C. The above completes the coating and developing process.
又，基板處理裝置的具體構成，並不限於以上所例示之塗佈顯影裝置2的構成。基板處理裝置只要包含拋光單元20及可控制該拋光單元20的控制裝置100，亦可為任意裝置。塗佈顯影裝置2亦可在藉由曝光裝置3所進行之曝光處理前，於任一時間點進行藉由拋光單元20所進行之晶圓W的拋光處理。例如，塗佈顯影裝置2亦可在藉由處理模組11、12中之塗佈單元U1及熱處理單元U2所進行之處理的前後，或是在藉由處理模組13中之塗佈單元U1及熱處理單元U2所進行之處理前，進行晶圓W的拋光處理。在塗佈顯影裝置2中，亦可在載具區塊4或處理模組11、12、13內配置有拋光單元20。
Furthermore, the specific structure of the substrate processing device is not limited to the structure of the coating and developing device 2 illustrated above. The substrate processing device may be any device as long as it includes a polishing unit 20 and a control device 100 that can control the polishing unit 20. The coating and developing device 2 may also perform a polishing process of the wafer W by the polishing unit 20 at any time point before the exposure process by the exposure device 3. For example, the coating and developing device 2 may also perform a polishing process of the wafer W before or after the process by the coating unit U1 and the heat treatment unit U2 in the process modules 11 and 12, or before the process by the coating unit U1 and the heat treatment unit U2 in the process module 13. In the coating and developing device 2, a polishing unit 20 may also be arranged in the carrier block 4 or the processing modules 11, 12, 13.
(拋光單元)
(Polishing unit)
接著，參照圖3~圖5的(b)，說明拋光單元20的詳細構成之一例。又，在圖4、圖5的(a)及圖5的(b)中，係省略圖3所示之元素的一部分。圖3所示之拋光單元20，係將晶圓W中之與形成光阻膜之表面相反側的背面(主面)加以拋光的裝置。拋光單元20係藉由滑動構件(例如磨石)拋光晶圓W的背面，藉此將晶圓W的背面粗糙化。拋光單元20例如亦可將形成為圓形之晶圓W的背面分成中心區域與外周區域，並藉由滑動構件拋光各區域。中心區域，係在俯視觀察下，藉由「具有從晶圓W之中心任意設定之半徑的圓」所區劃之區域，外周區域，係在俯視觀察下之晶圓W之中心區域以外的周緣區域。例如，中心區域
的半徑亦可設定成晶圓W之半徑的1/3~1/2左右。中心區域的半徑，就一例而言約為60~70mm左右。
Next, an example of the detailed structure of the polishing unit 20 is described with reference to FIG. 3 to FIG. 5(b). In addition, in FIG. 4, FIG. 5(a) and FIG. 5(b), a part of the elements shown in FIG. 3 is omitted. The polishing unit 20 shown in FIG. 3 is a device for polishing the back side (main surface) of the wafer W opposite to the surface on which the photoresist film is formed. The polishing unit 20 polishes the back side of the wafer W by a sliding member (such as a grindstone), thereby roughening the back side of the wafer W. The polishing unit 20 can also divide the back side of the wafer W formed into a circular shape into a central area and a peripheral area, and polish each area by a sliding member. The central area is the area divided by a "circle with a radius arbitrarily set from the center of the wafer W" when viewed from above, and the peripheral area is the peripheral area outside the central area of the wafer W when viewed from above. For example, the radius of the central area can also be set to about 1/3 to 1/2 of the radius of the wafer W. For example, the radius of the central area is about 60 to 70 mm.
拋光單元20為了去除拋光時所產生的異物，會在將晶圓W之背面拋光後，清洗晶圓W的背面。在本發明之實施態樣中，只要未特別說明，在拋光處理中，係作為包含晶圓W之背面的拋光及清洗而進行說明。藉由拋光單元20所進行之拋光處理(拋光)，例如，係為了在設於曝光裝置3之平台設置晶圓W時，減少晶圓W之背面與該平台之接觸面積而進行。拋光單元20包含：殼體21、基板固持機構30、切換部60及粗糙化機構70(拋光部)。
In order to remove foreign matter generated during polishing, the polishing unit 20 cleans the back of the wafer W after polishing the back of the wafer W. In the embodiment of the present invention, unless otherwise specified, the polishing process is described as including polishing and cleaning of the back of the wafer W. The polishing process (polishing) performed by the polishing unit 20 is, for example, performed to reduce the contact area between the back of the wafer W and the platform when the wafer W is set on the platform of the exposure device 3. The polishing unit 20 includes: a housing 21, a substrate holding mechanism 30, a switching unit 60, and a roughening mechanism 70 (polishing unit).
殼體21係將基板固持機構30、切換部60及粗糙化機構70加以收納。殼體21具有內部空間，其例如形成為略長方體狀。在殼體21之一端設有開口部，傳遞臂A8係將晶圓W搬入拋光單元20，或是將晶圓W從拋光單元20搬出。又，以下，為了方便說明，係將俯視觀察(從垂直方向上方觀察)下的殼體21之外緣中的長邊方向作為「前後方向」、將短邊方向作為「左右方向」而進行說明。
The housing 21 accommodates the substrate holding mechanism 30, the switching unit 60 and the roughening mechanism 70. The housing 21 has an internal space, which is formed into a slightly rectangular parallelepiped shape, for example. An opening is provided at one end of the housing 21, and the transfer arm A8 is used to move the wafer W into the polishing unit 20 or to move the wafer W out of the polishing unit 20. In addition, for the convenience of explanation, the long side direction of the outer edge of the housing 21 viewed from above (viewed from above in the vertical direction) is described as the "front-rear direction" and the short side direction is described as the "left-right direction".
基板固持機構30係在進行晶圓W之拋光時，固持晶圓W的背面。具體而言，係在進行晶圓W之中心區域的拋光(以下，稱為「中心拋光」)時，固持晶圓W的外周區域，並在進行晶圓W之外周區域的拋光(以下，稱為「外周拋光」)時，固持晶圓W的中心區域，而使晶圓W旋轉。基板固持機構30包含旋轉固持部40及周緣固持部50。
The substrate holding mechanism 30 holds the back side of the wafer W when the wafer W is polished. Specifically, when the central area of the wafer W is polished (hereinafter referred to as "central polishing"), the peripheral area of the wafer W is held, and when the peripheral area of the wafer W is polished (hereinafter referred to as "peripheral polishing"), the central area of the wafer W is held to rotate the wafer W. The substrate holding mechanism 30 includes a rotation holding portion 40 and a peripheral holding portion 50.
旋轉固持部40係在進行晶圓W之外周拋光時，固持晶圓W之背面中的中心區域。旋轉固持部40亦可在俯視觀察下固定於既定位置。旋轉固持部40包含旋轉夾頭41、軸42及旋轉驅動部43(參照圖4)。
The rotating holding part 40 holds the central area of the back side of the wafer W when the outer periphery of the wafer W is polished. The rotating holding part 40 can also be fixed at a predetermined position when viewed from above. The rotating holding part 40 includes a rotating chuck 41, a shaft 42, and a rotating driving part 43 (see FIG. 4 ).
旋轉夾頭41係藉由吸附晶圓W之背面中的中心區域，而水平地支撐晶圓W。例如，旋轉夾頭41亦可藉由負壓而吸附晶圓W。軸42係與旋轉夾頭41的下方連接，並以在垂直方向上延伸的方式形成。旋轉驅動部43係透過軸42而使旋轉夾頭41旋轉。例如，旋轉驅動部43為旋轉致動器。旋轉驅動部43係使旋轉夾頭41環繞垂直的軸線Ax0旋轉。伴隨藉由旋轉驅動部43所進行之旋轉夾頭41的旋轉，被旋轉夾頭41所支撐的晶圓W亦環繞軸線Ax0旋轉。
The rotary chuck 41 supports the wafer W horizontally by adsorbing the central area of the back side of the wafer W. For example, the rotary chuck 41 can also adsorb the wafer W by negative pressure. The shaft 42 is connected to the bottom of the rotary chuck 41 and is formed in a manner extending in the vertical direction. The rotary drive unit 43 rotates the rotary chuck 41 through the shaft 42. For example, the rotary drive unit 43 is a rotary actuator. The rotary drive unit 43 rotates the rotary chuck 41 around a vertical axis Ax0. Accompanying the rotation of the rotary chuck 41 by the rotary drive unit 43, the wafer W supported by the rotary chuck 41 also rotates around the axis Ax0.
周緣固持部50係在進行晶圓W的中心拋光時，固持晶圓W之背面中的外周區域。周緣固持部50具備兩個固定夾頭53。兩個固定夾頭53係藉由吸附晶圓W之背面中的外周區域，而水平地支撐晶圓W。例如，固定夾頭53亦可藉由負壓而吸附晶圓W。兩個固定夾頭53係以在左右方向上包夾旋轉夾頭41的方式，分別配置於旋轉夾頭41的左右。兩個固定夾頭53係在使晶圓W之中心位置與兩個固定夾頭53之中間位置於左右方向上一致的狀態下，配置成位於晶圓W的外周區域(周緣)。
The peripheral holding part 50 holds the peripheral area on the back side of the wafer W when the center polishing of the wafer W is performed. The peripheral holding part 50 has two fixed chucks 53. The two fixed chucks 53 support the wafer W horizontally by adsorbing the peripheral area on the back side of the wafer W. For example, the fixed chucks 53 can also adsorb the wafer W by negative pressure. The two fixed chucks 53 are respectively arranged on the left and right sides of the rotating chuck 41 in a manner of clamping the rotating chuck 41 in the left and right directions. The two fixed chucks 53 are arranged to be located in the peripheral area (periphery) of the wafer W in a state where the center position of the wafer W and the middle position of the two fixed chucks 53 are consistent in the left and right directions.
切換部60係切換晶圓W的配置狀態。具體而言，切換部60係將晶圓W的配置狀態切換成「以進行晶圓W之中心拋光的方式配置晶圓W的狀態」，或是「以進行晶圓W之外周拋光的方式配置晶圓W的狀態」。在本發明之實施態樣中，切換部60係為了切換晶圓W的配置狀態，而使周緣固持部50移動。切換部60係將周緣固持部50的位置切換成「進行晶圓W之中心拋光的位置」，或是「進行晶圓W
之外周拋光的位置」。又，在圖3及圖4中，係顯示進行晶圓W之外周拋光時的周緣固持部50之配置狀態。切換部60包含水平驅動機構61及升降驅動機構62。
The switching section 60 switches the configuration state of the wafer W. Specifically, the switching section 60 switches the configuration state of the wafer W to "a state in which the wafer W is configured in such a manner as to perform center polishing of the wafer W" or "a state in which the wafer W is configured in such a manner as to perform peripheral polishing of the wafer W". In the embodiment of the present invention, the switching section 60 moves the peripheral holding section 50 in order to switch the configuration state of the wafer W. The switching section 60 switches the position of the peripheral holding section 50 to "a position in which center polishing of the wafer W is performed" or "a position in which peripheral polishing of the wafer W is performed". In addition, FIG. 3 and FIG. 4 show the configuration state of the peripheral holding section 50 when peripheral polishing of the wafer W is performed. The switching unit 60 includes a horizontal driving mechanism 61 and a lifting driving mechanism 62.
水平驅動機構61係使固定夾頭53沿著前後方向往復移動。例如，水平驅動機構61包含線性致動器。水平驅動機構61係藉由使固定夾頭53移動，而使被固定夾頭53所支撐的晶圓W沿著前後方向移動。具體而言，水平驅動機構61係使固定夾頭53在「與旋轉夾頭41之間傳遞晶圓W的位置(以下，稱為「傳遞位置」)」與「進行晶圓W之中心拋光的位置(以下，稱為「中心拋光位置」)」之間移動。
The horizontal drive mechanism 61 moves the fixed chuck 53 back and forth in the front-back direction. For example, the horizontal drive mechanism 61 includes a linear actuator. The horizontal drive mechanism 61 moves the wafer W supported by the fixed chuck 53 in the front-back direction by moving the fixed chuck 53. Specifically, the horizontal drive mechanism 61 moves the fixed chuck 53 between the "position for transferring the wafer W between the rotating chuck 41 (hereinafter referred to as the "transfer position")" and the "position for performing center polishing of the wafer W (hereinafter referred to as the "center polishing position")".
升降驅動機構62係使固定夾頭53升降。例如，升降驅動機構62包含升降致動器。升降驅動機構62係使固定夾頭53在「低於旋轉夾頭41之高度(以下，稱為「待命高度」)」與「高於旋轉夾頭41之高度(以下，稱為「固持高度」)」之間升降。藉由升降驅動機構62而使固定夾頭53位於固持高度時，係由固定夾頭53固持晶圓W。藉由升降驅動機構62而使固定夾頭53位於待命高度時，係由旋轉夾頭41固持晶圓W。
The lifting drive mechanism 62 lifts the fixed chuck 53. For example, the lifting drive mechanism 62 includes a lifting actuator. The lifting drive mechanism 62 lifts the fixed chuck 53 between "a height lower than the rotating chuck 41 (hereinafter referred to as "standby height")" and "a height higher than the rotating chuck 41 (hereinafter referred to as "holding height")". When the fixed chuck 53 is at the holding height by the lifting drive mechanism 62, the wafer W is held by the fixed chuck 53. When the fixed chuck 53 is at the standby height by the lifting drive mechanism 62, the wafer W is held by the rotating chuck 41.
粗糙化機構70係將晶圓W之背面加以粗糙化的機構。具體而言，係將被基板固持機構30所固持之晶圓W的背面加以拋光，並清洗拋光後之晶圓W的背面。粗糙化機構70包含：拋光機構71、清洗機構72及迴旋機構74。
The roughening mechanism 70 is a mechanism for roughening the back surface of the wafer W. Specifically, the back surface of the wafer W held by the substrate holding mechanism 30 is polished, and the back surface of the polished wafer W is cleaned. The roughening mechanism 70 includes: a polishing mechanism 71, a cleaning mechanism 72, and a rotating mechanism 74.
拋光機構71係拋光晶圓W的背面。拋光機構71包含：拋光頭75、旋轉機構76、旋轉機構77及升降機構78。拋光頭75、旋轉機構76、旋轉機構77及升降機構78係從上方依此順序配置。拋光頭75係藉由與晶圓W接觸並滑動而拋光晶圓W
的構件。拋光頭75例如形成為圓筒狀或圓柱狀。拋光頭75的詳細例子會在之後敘述。
The polishing mechanism 71 polishes the back side of the wafer W. The polishing mechanism 71 includes: a polishing head 75, a rotating mechanism 76, a rotating mechanism 77 and a lifting mechanism 78. The polishing head 75, the rotating mechanism 76, the rotating mechanism 77 and the lifting mechanism 78 are arranged in this order from the top. The polishing head 75 is a component that polishes the wafer W by contacting and sliding with the wafer W. The polishing head 75 is formed, for example, in a cylindrical or columnar shape. A detailed example of the polishing head 75 will be described later.
旋轉機構76係支撐拋光頭75並使其旋轉。具體而言，旋轉機構76係使拋光頭75環繞垂直的軸線Ax1(第一軸)旋轉。旋轉機構76包含旋轉平台81及旋轉驅動部82(第一驅動部)。
The rotating mechanism 76 supports the polishing head 75 and rotates it. Specifically, the rotating mechanism 76 rotates the polishing head 75 around the vertical axis Ax1 (first axis). The rotating mechanism 76 includes a rotating platform 81 and a rotating drive unit 82 (first drive unit).
旋轉平台81係支撐拋光頭75。旋轉平台81亦可形成為圓板狀。圓板狀之旋轉平台81的中心位置亦可與軸線Ax1大略一致。旋轉平台81中，支撐拋光頭75的表面(支撐面)係以沿著水平方向的方式配置。旋轉平台81的直徑，就一例而言約為60mm~70mm左右。旋轉平台81的直徑係大於拋光頭75的外徑Dh(參照圖5的(a))。在旋轉平台81上，係以使軸線Ax1(旋轉平台81的中心位置)與拋光頭75的中心位置彼此不同的方式，設置拋光頭75。拋光頭75的中心位置係相對於軸線Ax1偏心的位置。例如，在俯視觀察下，亦能以使拋光頭75之外緣與旋轉平台81之外緣大略一致的方式，將拋光頭75設置於旋轉平台81之支撐面中的周緣部。
The rotating platform 81 supports the polishing head 75. The rotating platform 81 may be formed in a disk shape. The center position of the disk-shaped rotating platform 81 may be roughly consistent with the axis Ax1. In the rotating platform 81, the surface (supporting surface) supporting the polishing head 75 is arranged in a horizontal direction. The diameter of the rotating platform 81 is about 60 mm to 70 mm, for example. The diameter of the rotating platform 81 is larger than the outer diameter Dh of the polishing head 75 (refer to (a) of Figure 5). On the rotating platform 81, the polishing head 75 is arranged in a manner that the axis Ax1 (the center position of the rotating platform 81) and the center position of the polishing head 75 are different from each other. The center position of the polishing head 75 is an eccentric position relative to the axis Ax1. For example, when viewed from above, the polishing head 75 can be placed on the peripheral portion of the supporting surface of the rotating platform 81 so that the outer edge of the polishing head 75 is roughly consistent with the outer edge of the rotating platform 81.
旋轉驅動部82係使旋轉平台81環繞軸線Ax1旋轉。旋轉驅動部82係和旋轉平台81中之與支撐面相反側的背面連接。例如，旋轉驅動部82為旋轉致動器。藉由旋轉驅動部82使旋轉平台81旋轉，藉此使拋光頭75環繞軸線Ax1旋轉。拋光頭75的外徑Dh係小於環繞軸線Ax1之拋光頭75的可動範圍之直徑。所謂環繞軸線Ax1之拋光頭75的可動範圍，係指拋光頭75之拋光面(與晶圓W的接觸面)的至少一部分藉由旋轉機構76的驅動，而可到達的範圍。換言之，拋光頭75的外徑Dh係小於藉由旋轉驅動部82所生成之拋光頭75的移動軌跡之外緣的直徑。在拋
光頭75位於旋轉平台81之周緣部的情況下，環繞軸線Ax1之拋光頭75的可動範圍(藉由旋轉驅動部82所生成之拋光頭75的移動軌跡)之外緣，係與旋轉平台81之外緣大略一致。
The rotary drive unit 82 rotates the rotary platform 81 around the axis Ax1. The rotary drive unit 82 is connected to the back surface of the rotary platform 81 opposite to the supporting surface. For example, the rotary drive unit 82 is a rotary actuator. The rotary platform 81 is rotated by the rotary drive unit 82, thereby rotating the polishing head 75 around the axis Ax1. The outer diameter Dh of the polishing head 75 is a diameter smaller than the movable range of the polishing head 75 around the axis Ax1. The movable range of the polishing head 75 around the axis Ax1 refers to the range that at least a portion of the polishing surface (the contact surface with the wafer W) of the polishing head 75 can reach by being driven by the rotating mechanism 76. In other words, the outer diameter Dh of the polishing head 75 is smaller than the diameter of the outer edge of the moving track of the polishing head 75 generated by the rotating drive unit 82. When the polishing head 75 is located at the periphery of the rotating platform 81, the outer edge of the movable range of the polishing head 75 around the axis Ax1 (the moving track of the polishing head 75 generated by the rotating drive unit 82) is roughly consistent with the outer edge of the rotating platform 81.
旋轉機構77係使軸線Ax1沿著「環繞與軸線Ax1平行之軸線Ax2(第二軸)的圓形軌道」移動。例如，旋轉機構77係支撐旋轉機構76並使其環繞軸線Ax2旋轉。藉由旋轉機構77而使旋轉機構76環繞軸線Ax2旋轉，藉此使拋光頭75一邊藉由旋轉機構76旋轉，一邊沿著以軸線Ax2為中心的圓形軌道移動。假使在將藉由旋轉機構76所進行之拋光頭75的旋轉動作停止的狀態下，使旋轉機構77驅動，則拋光頭75會沿著以軸線Ax2為中心的圓周旋轉。旋轉機構77包含旋轉平台83與旋轉驅動部84(第二驅動部)。
The rotating mechanism 77 moves the axis Ax1 along a "circular track around the axis Ax2 (second axis) parallel to the axis Ax1". For example, the rotating mechanism 77 supports the rotating mechanism 76 and rotates it around the axis Ax2. The rotating mechanism 76 is rotated around the axis Ax2 by the rotating mechanism 77, so that the polishing head 75 moves along a circular track centered on the axis Ax2 while being rotated by the rotating mechanism 76. If the rotating mechanism 77 is driven while the rotation of the polishing head 75 by the rotating mechanism 76 is stopped, the polishing head 75 will rotate along a circle centered on the axis Ax2. The rotating mechanism 77 includes a rotating platform 83 and a rotating driving unit 84 (second driving unit).
旋轉平台83係支撐旋轉機構76(旋轉驅動部82)。旋轉平台83亦可形成為圓板狀。圓板狀之旋轉平台83的中心位置亦可與軸線Ax2大略一致。在俯視觀察下，旋轉平台83的大小(面積)亦可大於旋轉機構76的旋轉平台81。旋轉平台83中，支撐旋轉機構76的表面(支撐面)係以沿著水平方向的方式配置。
The rotating platform 83 supports the rotating mechanism 76 (rotating drive unit 82). The rotating platform 83 may also be formed in a disk shape. The center position of the disk-shaped rotating platform 83 may also be roughly consistent with the axis Ax2. When viewed from above, the size (area) of the rotating platform 83 may also be larger than the rotating platform 81 of the rotating mechanism 76. In the rotating platform 83, the surface (supporting surface) supporting the rotating mechanism 76 is arranged in a horizontal direction.
旋轉驅動部84係使旋轉平台83環繞軸線Ax2旋轉。旋轉驅動部84係和旋轉平台83之與設置面相反側的背面連接。例如，旋轉驅動部84為旋轉致動器。藉由旋轉驅動部84使旋轉平台83旋轉，藉此使軸線Ax1沿著以軸線Ax2為中心的圓形軌道移動。
The rotation drive unit 84 rotates the rotating platform 83 around the axis Ax2. The rotation drive unit 84 is connected to the back side of the rotating platform 83 opposite to the installation surface. For example, the rotation drive unit 84 is a rotation actuator. The rotating platform 83 is rotated by the rotation drive unit 84, thereby moving the axis Ax1 along a circular track centered on the axis Ax2.
藉由旋轉機構76、77的旋轉驅動，在俯視觀察下，拋光頭75會在以旋轉平台83之外緣所區劃之區域的整個區域中移動。因為即使藉由旋轉機構76之旋
轉，旋轉平台81亦不會移動，故旋轉平台81為自轉，但因為拋光頭75的中心位置係相對於軸線Ax1偏心的位置，故拋光頭75為公轉。因為旋轉平台81的中心(軸線Ax1)係相對於軸線Ax2偏心的位置，故藉由旋轉機構77的旋轉，旋轉平台81會一邊自轉一邊環繞軸線Ax2公轉。
By the rotation drive of the rotating mechanisms 76 and 77, the polishing head 75 moves in the entire area delimited by the outer edge of the rotating platform 83 when viewed from above. Since the rotating platform 81 does not move even by the rotation of the rotating mechanism 76, the rotating platform 81 rotates on its own, but since the center position of the polishing head 75 is eccentric relative to the axis Ax1, the polishing head 75 revolves. Since the center (axis Ax1) of the rotating platform 81 is eccentric relative to the axis Ax2, the rotating platform 81 rotates on its own while revolving around the axis Ax2 by the rotation of the rotating mechanism 77.
拋光機構71中，軸線Ax2係位於環繞軸線Ax1之拋光頭75的可動範圍內。如圖3所示，可在旋轉機構76(旋轉平台81)上設置單一個拋光頭75。或是，亦可在旋轉機構76上設置複數拋光頭75。在拋光機構71中，拋光頭75亦能以「在俯視觀察下以軸線Ax1為中心而呈非對稱的方式」設於旋轉機構76。在俯視觀察下之拋光頭75的大小(以拋光頭75之外緣所區劃之區域的面積)，亦可小於旋轉平台81。藉由此構成，在晶圓W拋光時的某個瞬間，與晶圓W接觸之滑動構件(拋光頭75)的所有接觸部分之最大寬度，係小於環繞軸線Ax1之拋光頭75的可動範圍之外緣。
In the polishing mechanism 71, the axis Ax2 is located within the movable range of the polishing head 75 around the axis Ax1. As shown in FIG. 3, a single polishing head 75 may be provided on the rotating mechanism 76 (rotating platform 81). Alternatively, a plurality of polishing heads 75 may be provided on the rotating mechanism 76. In the polishing mechanism 71, the polishing head 75 may be provided on the rotating mechanism 76 in an asymmetric manner with the axis Ax1 as the center when viewed from above. The size of the polishing head 75 when viewed from above (the area of the region defined by the outer edge of the polishing head 75) may also be smaller than the rotating platform 81. With this structure, at a certain moment when the wafer W is polished, the maximum width of all contact parts of the sliding member (polishing head 75) that contacts the wafer W is smaller than the outer edge of the movable range of the polishing head 75 around the axis Ax1.
升降機構78係使旋轉機構77升降。升降機構78係支撐旋轉機構77。例如，升降機構78包含升降致動器。藉由升降機構78而使旋轉機構76、77升降，藉此使被旋轉機構76所支撐的拋光頭75升降。
The lifting mechanism 78 lifts and lowers the rotating mechanism 77. The lifting mechanism 78 supports the rotating mechanism 77. For example, the lifting mechanism 78 includes a lifting actuator. The lifting mechanism 78 lifts and lowers the rotating mechanisms 76 and 77, thereby lifting and lowering the polishing head 75 supported by the rotating mechanism 76.
清洗機構72係清洗藉由拋光機構71拋光後之晶圓W的背面。清洗機構72包含：清洗頭79、旋轉機構96、旋轉機構97及升降機構98。由於旋轉機構96、97及升降機構98係分別與旋轉機構76、77及升降機構78具有相同的功能及構成，故省略說明。又，軸線Ax4、Ax5係分別與拋光機構71中的軸線Ax1、Ax2對應。清洗頭79係藉由在晶圓W滑動，而去除附著於晶圓W之背面的微粒。例如，清洗
頭79係由刷具構成。清洗頭79在俯視觀察下，亦可具有與旋轉機構96(旋轉平台)大略相同的大小(面積)。
The cleaning mechanism 72 cleans the back of the wafer W after being polished by the polishing mechanism 71. The cleaning mechanism 72 includes: a cleaning head 79, a rotating mechanism 96, a rotating mechanism 97 and a lifting mechanism 98. Since the rotating mechanisms 96, 97 and the lifting mechanism 98 have the same functions and structures as the rotating mechanisms 76, 77 and the lifting mechanism 78, respectively, their description is omitted. In addition, the axes Ax4 and Ax5 correspond to the axes Ax1 and Ax2 in the polishing mechanism 71, respectively. The cleaning head 79 removes particles attached to the back of the wafer W by sliding on the wafer W. For example, the cleaning head 79 is composed of a brush. The cleaning head 79 can also have a size (area) roughly the same as the rotating mechanism 96 (rotating platform) when viewed from above.
迴旋機構74切換以下之狀態：將拋光機構71配置於對晶圓W之背面進行拋光處理用之位置的狀態、及將清洗機構72配置於該位置的狀態。迴旋機構74係使拋光機構71及清洗機構72沿著「以和軸線Ax1(軸線Ax2)平行之軸線Ax3(第三軸)為中心的圓形軌道」移動。換言之，迴旋機構74係將以軸線Ax3為中心的圓周之一部分作為移動軌跡，而使軸線Ax2及軸線Ax5移動。藉由迴旋機構74使拋光機構71沿著以軸線Ax3為中心的圓形軌道移動，藉此使拋光頭75沿著以軸線Ax3為中心的圓形軌道移動。假使在停止藉由旋轉機構76、77所進行之拋光頭75的旋轉動作的狀態下，使迴旋機構74驅動，則拋光頭75會沿著以軸線Ax3為中心的圓周旋轉。
The rotating mechanism 74 switches between the following states: the state in which the polishing mechanism 71 is arranged at a position for polishing the back side of the wafer W, and the state in which the cleaning mechanism 72 is arranged at the position. The rotating mechanism 74 moves the polishing mechanism 71 and the cleaning mechanism 72 along a "circular track centered on the axis Ax3 (third axis) parallel to the axis Ax1 (axis Ax2)". In other words, the rotating mechanism 74 moves the axis Ax2 and the axis Ax5 using a portion of the circumference centered on the axis Ax3 as a moving track. The polishing mechanism 71 is moved along a circular track with the axis Ax3 as the center by the rotating mechanism 74, thereby moving the polishing head 75 along a circular track with the axis Ax3 as the center. If the rotating mechanism 74 is driven while the rotating action of the polishing head 75 performed by the rotating mechanisms 76 and 77 is stopped, the polishing head 75 will rotate along a circle with the axis Ax3 as the center.
在晶圓W配置於旋轉夾頭41的狀態下，軸線Ax0(旋轉固持部40的旋轉中心)與軸線Ax3(迴旋機構74的迴旋中心)，係分開可在該晶圓W之外周區域配置拋光機構71及清洗機構72之間隔的程度，在旋轉機構76最接近旋轉夾頭41的狀態下，軸線Ax0與軸線Ax3的距離L，係設定成使旋轉機構76之旋轉平台81的周緣部之一部分與晶圓W的中心區域重疊。在軸線Ax0~Ax3於前後方向上依序排列的情況下，軸線Ax0與軸線Ax3的距離L，係滿足式(1)的條件。亦即，距離L係小於將距離L1與兩倍距離L2的值相加所得之距離。藉由距離L滿足式(1)之條件，在旋轉機構76最接近旋轉夾頭41的狀態下，當藉由旋轉機構76使旋轉平台81旋轉時，拋光頭75會在橫跨晶圓W之中心區域與外周區域的範圍中移動。
When the wafer W is arranged on the rotating chuck 41, the axis Ax0 (the rotation center of the rotating holding portion 40) and the axis Ax3 (the rotation center of the rotating mechanism 74) are separated to the extent that the polishing mechanism 71 and the cleaning mechanism 72 can be arranged in the outer peripheral area of the wafer W. When the rotating mechanism 76 is closest to the rotating chuck 41, the distance L between the axis Ax0 and the axis Ax3 is set so that a part of the peripheral portion of the rotating platform 81 of the rotating mechanism 76 overlaps with the central area of the wafer W. When the axes Ax0 to Ax3 are arranged in sequence in the front-rear direction, the distance L between the axis Ax0 and the axis Ax3 satisfies the condition of formula (1). That is, the distance L is less than the distance obtained by adding the distance L1 and twice the distance L2. When the distance L satisfies the condition of formula (1), when the rotating mechanism 76 is closest to the rotating chuck 41, the polishing head 75 moves in a range across the central area and the peripheral area of the wafer W when the rotating platform 81 is rotated by the rotating mechanism 76.
L<L1+2×L2‧‧‧(1)
L<L1+2×L2‧‧‧(1)
L1：軸線Ax2與軸線Ax3的距離
L1: The distance between axis Ax2 and axis Ax3
L2：環繞軸線Ax1之拋光頭75的可動範圍之直徑
L2: The diameter of the movable range of the polishing head 75 around the axis Ax1
迴旋機構74包含迴旋平台86及迴旋驅動部87(第三驅動部)。迴旋平台86係使拋光機構71及清洗機構72環繞軸線Ax3之周向並列並支撐。換言之，在迴旋平台86上，拋光機構71及清洗機構72係彼此分開配置。迴旋平台86亦可形成為圓板狀。圓板狀的迴旋平台86之中心位置亦可與軸線Ax3大略一致。在俯視觀察下，迴旋平台86的大小(面積)亦可大於旋轉機構77的旋轉平台83。在迴旋平台86上，設有拋光機構71及清洗機構72的升降機構78、98。迴旋平台86中，支撐升降機構78的表面(支撐面)係以沿著水平方向的方式配置。
The rotating mechanism 74 includes a rotating platform 86 and a rotating drive unit 87 (third drive unit). The rotating platform 86 is used to support the polishing mechanism 71 and the cleaning mechanism 72 in parallel around the axis Ax3. In other words, on the rotating platform 86, the polishing mechanism 71 and the cleaning mechanism 72 are arranged separately from each other. The rotating platform 86 can also be formed into a circular plate shape. The center position of the circular plate-shaped rotating platform 86 can also be roughly consistent with the axis Ax3. When viewed from above, the size (area) of the rotating platform 86 can also be larger than the rotating platform 83 of the rotating mechanism 77. On the rotating platform 86, lifting mechanisms 78 and 98 of the polishing mechanism 71 and the cleaning mechanism 72 are provided. In the rotating platform 86, the surface (supporting surface) supporting the lifting mechanism 78 is arranged in a horizontal direction.
迴旋驅動部87係使迴旋平台86環繞軸線Ax3旋轉。迴旋驅動部87係與迴旋平台86之和支撐面相反側的背面連接。例如，迴旋驅動部87為旋轉致動器。藉由迴旋驅動部87使迴旋平台86沿著以軸線Ax3為中心的圓周移動，藉此，迴旋驅動部87會使軸線Ax2、Ax5沿著該圓周移動。
The rotary drive unit 87 causes the rotary platform 86 to rotate around the axis Ax3. The rotary drive unit 87 is connected to the back side of the rotary platform 86 on the opposite side of the supporting surface. For example, the rotary drive unit 87 is a rotary actuator. The rotary drive unit 87 causes the rotary platform 86 to move along a circle centered on the axis Ax3, thereby causing the rotary drive unit 87 to move the axes Ax2 and Ax5 along the circle.
在圖4中，係顯示當軸線Ax1、Ax2、Ax3在一直線上排列時的示意性的拋光單元20之側視圖。軸線Ax1與軸線Ax2的間隔D1亦可短於軸線Ax2與軸線Ax3的間隔D2。軸線Ax1與軸線Ax2的間隔D1亦可在環繞軸線Ax1之拋光頭75的可動範圍之半徑以下。例如，在本發明之實施態樣中，旋轉平台83的半徑亦可小於旋轉平台81的直徑。
FIG4 shows a schematic side view of the polishing unit 20 when the axes Ax1, Ax2, and Ax3 are arranged in a straight line. The interval D1 between the axes Ax1 and Ax2 may be shorter than the interval D2 between the axes Ax2 and Ax3. The interval D1 between the axes Ax1 and Ax2 may be less than the radius of the movable range of the polishing head 75 around the axis Ax1. For example, in an embodiment of the present invention, the radius of the rotating platform 83 may be smaller than the diameter of the rotating platform 81.
圖5的(a)及圖5的(b)係例示拋光頭75之更詳細之構成的圖式。拋光頭75在進行晶圓W的拋光處理時，係與晶圓W的背面接觸並相對於晶圓W滑動。拋
光頭75亦可由磨石構成。例如，拋光頭75亦可為鑽石磨石。亦可使用粒度60000的鑽石作為鑽石磨石。
FIG. 5 (a) and FIG. 5 (b) are diagrams illustrating a more detailed structure of the polishing head 75. When performing a polishing process on the wafer W, the polishing head 75 contacts the back surface of the wafer W and slides relative to the wafer W. The polishing head 75 may also be composed of a grindstone. For example, the polishing head 75 may also be a diamond grindstone. A diamond with a grit of 60,000 may also be used as a diamond grindstone.
拋光頭75亦可形成為中空圓柱狀，亦即在俯視觀察下呈環狀(圓環狀)。環狀的拋光頭75之中心位置係由環中心界定。環狀的拋光頭75在俯視觀察下，只要形成為實質上包圍環中心即可，即使缺少圓環形狀之一部分亦可。就缺少一部分的圓環狀而言，環狀的拋光頭75亦可藉由「沿著環中心之周圍而隔著間隔配置的複數(例如6個以上)之柱體」構成。又，拋光頭75亦可形成為實心圓柱狀。
The polishing head 75 can also be formed into a hollow cylindrical shape, that is, a ring shape (circular ring shape) when viewed from above. The center position of the ring-shaped polishing head 75 is defined by the ring center. The ring-shaped polishing head 75 can be formed to substantially surround the ring center when viewed from above, even if a part of the ring shape is missing. As for the ring shape that is missing a part, the ring-shaped polishing head 75 can also be composed of "a plurality of (for example, more than 6) columns arranged at intervals along the circumference of the ring center". In addition, the polishing head 75 can also be formed into a solid cylindrical shape.
拋光頭75的外徑Dh亦可為晶圓W之半徑的3%~8%左右的大小。例如，外徑Dh亦可為5mm~12mm。或是，外徑Dh亦可為6mm~11mm。或是，外徑Dh亦可為8mm~10mm。拋光頭75的厚度Th亦可為外徑Dh的1/3~1/2左右。在拋光頭75形成為環狀的情況下，該拋光頭75的內徑亦可為外徑Dh的1/3~2/3左右。拋光頭75的外徑Dh亦可由拋光頭75之與晶圓W的接觸面亦即頂面的外徑界定。
The outer diameter Dh of the polishing head 75 may also be about 3% to 8% of the radius of the wafer W. For example, the outer diameter Dh may also be 5mm to 12mm. Alternatively, the outer diameter Dh may also be 6mm to 11mm. Alternatively, the outer diameter Dh may also be 8mm to 10mm. The thickness Th of the polishing head 75 may also be about 1/3 to 1/2 of the outer diameter Dh. When the polishing head 75 is formed into a ring shape, the inner diameter of the polishing head 75 may also be about 1/3 to 2/3 of the outer diameter Dh. The outer diameter Dh of the polishing head 75 may also be defined by the outer diameter of the contact surface of the polishing head 75 with the wafer W, i.e., the top surface.
粗糙化機構70亦可更包含緩衝構件92及安裝構件93。緩衝構件92係夾設在拋光頭75與旋轉平台81之間。緩衝構件92係以比拋光頭75柔軟的構件所構成。緩衝構件92在對拋光頭75施加往下方的力時，具有沿垂直方向伸縮變形之程度的硬度。例如，緩衝構件92亦可由海綿或是橡膠構成。緩衝構件92在晶圓W之背面包含翹曲的情況下，會進行伸縮以使拋光頭75可跟隨於該翹曲。緩衝構件92係形成為環狀。緩衝構件92的外徑亦可與外徑Dh相同程度，緩衝構件92的內徑亦可小於拋光頭75的內徑。緩衝構件92的厚度Ts亦可小於拋光頭75的厚度Th。厚度Ts例如亦可在厚度Th的1/3以下，亦可在厚度Th的一半以下。例如，拋
光頭75之外徑Dh的最大值，亦可透過驗證「是否為可藉由緩衝構件92之伸縮而跟隨於晶圓W之翹曲的大小」來加以設定。拋光頭75之外徑Dh的最小值，亦可透過驗證「在晶圓W拋光時，拋光頭75是否不會相對於晶圓W之背面傾斜」來加以設定。
The roughening mechanism 70 may further include a buffer member 92 and a mounting member 93. The buffer member 92 is sandwiched between the polishing head 75 and the rotating platform 81. The buffer member 92 is made of a member that is softer than the polishing head 75. The buffer member 92 has a hardness that allows it to stretch and deform in the vertical direction when a downward force is applied to the polishing head 75. For example, the buffer member 92 may also be made of sponge or rubber. When the back side of the wafer W includes a warp, the buffer member 92 will stretch and contract so that the polishing head 75 can follow the warp. The buffer member 92 is formed in a ring shape. The outer diameter of the buffer member 92 may be the same as the outer diameter Dh, and the inner diameter of the buffer member 92 may be smaller than the inner diameter of the polishing head 75. The thickness Ts of the buffer member 92 may be smaller than the thickness Th of the polishing head 75. The thickness Ts may be, for example, less than 1/3 of the thickness Th, or less than half of the thickness Th. For example, the maximum value of the outer diameter Dh of the polishing head 75 may be set by verifying whether it is a size that can follow the warping of the wafer W by the extension and contraction of the buffer member 92. The minimum value of the outer diameter Dh of the polishing head 75 may also be set by verifying whether the polishing head 75 will not tilt relative to the back of the wafer W when the wafer W is polished.
安裝構件93係將拋光頭75及緩衝構件92安裝於旋轉平台81。安裝構件93包含軸部93c、及形成於軸部93c之兩端的凸緣部93a、93b。軸部93c係通過緩衝構件92與旋轉平台81之周緣部的孔。凸緣部93a、93b係在垂直方向上夾住旋轉平台81與緩衝構件92。藉此，緩衝構件92會被固持於旋轉平台81上。又，凸緣部93a的頂面係與拋光頭75的底面黏接。藉此，拋光頭75會被固持於旋轉平台81上。安裝構件93亦可由兩個構件構成。在安裝構件93中，係在垂直方向上形成有貫通的孔。藉此，可藉由環狀的拋光頭75及安裝構件93各自的孔構成在垂直方向上下開口的穿通孔，而使拋光時所產生的拋光渣從該穿通孔往下方排出。
The mounting member 93 mounts the polishing head 75 and the buffer member 92 on the rotating platform 81. The mounting member 93 includes a shaft 93c and flanges 93a and 93b formed at both ends of the shaft 93c. The shaft 93c passes through a hole formed in the peripheral portion of the buffer member 92 and the rotating platform 81. The flanges 93a and 93b clamp the rotating platform 81 and the buffer member 92 in the vertical direction. Thereby, the buffer member 92 is fixed on the rotating platform 81. In addition, the top surface of the flange 93a is bonded to the bottom surface of the polishing head 75. Thereby, the polishing head 75 is fixed on the rotating platform 81. The mounting member 93 can also be composed of two members. A through hole is formed in the mounting member 93 in the vertical direction. Thus, the holes of the annular polishing head 75 and the mounting member 93 can form a through hole that opens vertically up and down, so that the polishing residue generated during polishing can be discharged downward from the through hole.
(控制裝置100)
(Control device 100)
如以上構成之拋光單元20，係由控制裝置100加以控制。控制裝置100係執行以下控制：中心拋光控制，使拋光頭75拋光晶圓W的中心區域；及外周拋光控制，拋光頭75拋光晶圓W的外周區域。
The polishing unit 20 constructed as above is controlled by the control device 100. The control device 100 performs the following control: center polishing control, so that the polishing head 75 polishes the center area of the wafer W; and peripheral polishing control, so that the polishing head 75 polishes the peripheral area of the wafer W.
例如，控制裝置100係由一個或是複數控制用電腦構成。例如，如圖6所示，控制裝置100包含電路120。電路120包含：一個或是複數處理器121、記憶體122、儲存裝置123及輸入輸出埠124。儲存裝置123例如為硬碟等，包含電腦可讀取之記錄媒體。記錄媒體儲存有用於使拋光單元20執行後述基板處理步驟之程式。記錄媒體亦可為非揮發性的半導體記憶體、磁氣碟片及光碟等可取出之媒體。
記憶體122係暫時儲存從儲存裝置123之記錄媒體載入的程式、及由處理器121所執行的運算結果。處理器121係與記憶體122協同而執行上述程式，藉此構成上述各功能模組。輸入輸出埠124係依照來自處理器121的指令，而在基板固持機構30、切換部60及粗糙化機構70之間，進行電訊號的輸入輸出。
For example, the control device 100 is composed of one or more control computers. For example, as shown in FIG6 , the control device 100 includes a circuit 120. The circuit 120 includes: one or more processors 121, a memory 122, a storage device 123, and an input/output port 124. The storage device 123 is, for example, a hard disk, etc., including a computer-readable recording medium. The recording medium stores a program that is useful for the polishing unit 20 to perform the substrate processing steps described later. The recording medium can also be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, and an optical disk.
The memory 122 temporarily stores the program loaded from the recording medium of the storage device 123 and the calculation results executed by the processor 121. The processor 121 executes the above program in cooperation with the memory 122, thereby forming the above functional modules. The input and output port 124 performs input and output of electrical signals between the substrate holding mechanism 30, the switching part 60 and the roughening mechanism 70 according to the instructions from the processor 121.
又，控制裝置100的硬體構成，不必限定於藉由程式而構成各功能模組者。例如，控制裝置100的各功能模組，亦可藉由專用的邏輯電路或是將其整合後之ASIC(Application Specific Integrated Circuit：特殊應用積體電路)而構成。
Furthermore, the hardware configuration of the control device 100 is not necessarily limited to the configuration of each functional module by a program. For example, each functional module of the control device 100 may also be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) after integrating the dedicated logic circuit.
在控制裝置100的儲存裝置123中，亦可儲存有對晶圓W之拋光動作指令及清洗動作指令。例如，在拋光動作指令中，亦可包含：與中心拋光有關的動作指令、與外周拋光有關的動作指令、及與清洗動作有關的動作指令。在與中心拋光有關的動作指令中，亦可包含與旋轉機構76、77之旋轉速度及拋光時間有關的資訊。在與外周拋光有關的動作指令中，亦可包含與旋轉機構76、77之旋轉速度、晶圓W(旋轉驅動部43)之旋轉速度、以及藉由迴旋驅動部87所移動之移動速度。
The storage device 123 of the control device 100 may also store polishing action instructions and cleaning action instructions for the wafer W. For example, the polishing action instructions may include: action instructions related to center polishing, action instructions related to peripheral polishing, and action instructions related to cleaning actions. The action instructions related to center polishing may also include information related to the rotation speed of the rotating mechanisms 76 and 77 and the polishing time. The action instructions related to peripheral polishing may also include the rotation speed of the rotating mechanisms 76 and 77, the rotation speed of the wafer W (rotation drive unit 43), and the movement speed moved by the rotary drive unit 87.
[基板處理方法]
[Substrate processing method]
接著，就基板處理方法之一例而言，參照圖7，說明在拋光單元20中執行的拋光及清洗之處理步驟例子。又，在初始狀態中，固定夾頭53係作為配置於待命位置及待命高度而進行說明。
Next, with reference to FIG. 7 , an example of the polishing and cleaning processing steps performed in the polishing unit 20 is described as an example of a substrate processing method. In addition, in the initial state, the fixed chuck 53 is described as being configured at the standby position and standby height.
如圖7所示，控制裝置100首先執行步驟S01、S02。在步驟S01中，控制裝置100係控制傳遞臂A8，將拋光處理之對象亦即晶圓W搬入拋光單元20。例如，控
制裝置100係藉由傳遞臂A8而使晶圓W載置於旋轉夾頭41。接著，在步驟S02中，控制裝置100係藉由升降驅動機構62而使固定夾頭53從待命高度升高至固持高度，藉此使晶圓W載置於固定夾頭53上之後，再使晶圓W的外周區域固持於固定夾頭53。其後，如圖8的(a)所示，控制裝置100係藉由水平驅動機構61而使固定夾頭53從待命位置移動至中心拋光位置。
As shown in FIG. 7 , the control device 100 first performs steps S01 and S02. In step S01, the control device 100 controls the transfer arm A8 to move the wafer W, which is the object of the polishing process, into the polishing unit 20. For example, the control device 100 places the wafer W on the rotary chuck 41 by the transfer arm A8. Then, in step S02, the control device 100 raises the fixed chuck 53 from the standby height to the holding height by the lifting drive mechanism 62, thereby placing the wafer W on the fixed chuck 53, and then holding the peripheral area of the wafer W on the fixed chuck 53. Thereafter, as shown in FIG8(a), the control device 100 moves the fixed chuck 53 from the standby position to the center polishing position via the horizontal drive mechanism 61.
接著，控制裝置100執行步驟S03。在步驟S03中，控制裝置100係執行中心拋光控制，該中心拋光控制係令粗糙化機構70拋光由周緣固持部50固持之晶圓W的中心區域。例如，控制裝置100係在使晶圓W固持於周緣固持部50的狀態下，一邊藉由旋轉機構76、77使拋光頭75旋轉驅動，一邊使拋光頭75在晶圓W的中心區域滑動。中心拋光控制的細節係在之後敘述。
Next, the control device 100 executes step S03. In step S03, the control device 100 executes center polishing control, which causes the roughening mechanism 70 to polish the center area of the wafer W held by the peripheral holding portion 50. For example, the control device 100 drives the polishing head 75 to rotate by the rotating mechanisms 76 and 77 while the wafer W is held in the peripheral holding portion 50, and the polishing head 75 slides in the center area of the wafer W. The details of the center polishing control are described later.
接著，控制裝置100執行步驟S04。在步驟S04中，控制裝置100係執行中心清洗控制，該中心清洗控制係令粗糙化機構70清洗由周緣固持部50固持之晶圓W的中心區域。例如，控制裝置100係在使晶圓W固持於周緣固持部50的狀態下，一邊藉由旋轉機構96、97使清洗頭79旋轉驅動，一邊使清洗頭79在晶圓W的中心區域滑動。中心清洗控制中的清洗頭79之驅動步驟，係與中心拋光控制中的拋光頭75之驅動步驟相同。控制裝置100在清洗頭79的驅動中，亦可藉由未圖示的清洗水供給部將清洗水供給至晶圓W的背面。
Next, the control device 100 executes step S04. In step S04, the control device 100 executes the center cleaning control, which is to make the roughening mechanism 70 clean the center area of the wafer W held by the peripheral holding part 50. For example, the control device 100 rotates and drives the cleaning head 79 by the rotating mechanisms 96 and 97 while holding the wafer W in the peripheral holding part 50, and slides the cleaning head 79 in the center area of the wafer W. The driving step of the cleaning head 79 in the center cleaning control is the same as the driving step of the polishing head 75 in the center polishing control. When driving the cleaning head 79, the control device 100 can also supply cleaning water to the back of the wafer W through the cleaning water supply part (not shown).
接著，控制裝置100執行步驟S05。在步驟S05中，控制裝置100係藉由切換部60，使由周緣固持部50(固定夾頭53)固持之晶圓W移動。例如，如圖8的(b)所示，控制裝置100係藉由使切換部60的水平驅動機構61驅動，而使固持晶圓W之固定夾頭53從中心拋光位置移動至傳遞位置。接著，控制裝置100係解除由固
定夾頭53所進行之晶圓W的吸附，並驅動升降驅動機構62，而使固定夾頭53從固持高度下降至待命高度。藉此，晶圓W會載置於旋轉夾頭41。控制裝置100在晶圓W載置於旋轉夾頭41後，使晶圓W吸附於旋轉夾頭41。藉此，旋轉固持部40會固持晶圓W之背面的中心區域。在步驟S05中，切換部60係在以下狀態進行切換：軸線Ax2配置於固持在周緣固持部50之晶圓W的中心區域的狀態、及軸線Ax2配置於固持在旋轉固持部40之晶圓W的外周區域的狀態。
Next, the control device 100 executes step S05. In step S05, the control device 100 moves the wafer W held by the peripheral holding portion 50 (fixed chuck 53) by the switching portion 60. For example, as shown in FIG8(b), the control device 100 drives the horizontal drive mechanism 61 of the switching portion 60 to move the fixed chuck 53 holding the wafer W from the center polishing position to the transfer position. Next, the control device 100 releases the adsorption of the wafer W by the fixed chuck 53 and drives the lifting drive mechanism 62 to lower the fixed chuck 53 from the holding height to the standby height. Thus, the wafer W is placed on the rotary chuck 41. After the wafer W is placed on the rotary chuck 41, the control device 100 causes the wafer W to be adsorbed on the rotary chuck 41. Thus, the rotary holding portion 40 holds the central area of the back side of the wafer W. In step S05, the switching portion 60 switches between the following states: the state in which the axis Ax2 is arranged in the central area of the wafer W held in the peripheral holding portion 50, and the state in which the axis Ax2 is arranged in the peripheral area of the wafer W held in the rotary holding portion 40.
接著，控制裝置100執行步驟S06。在步驟S06中，控制裝置100係執行外周拋光控制，該控制係藉由粗糙化機構70拋光藉由旋轉固持部40旋轉之晶圓W的外周區域。例如，控制裝置100係一邊藉由旋轉固持部40使晶圓W旋轉，一邊使拋光頭75在晶圓W的背面滑動，藉此拋光晶圓W的外周區域。外周拋光控制的細節係在之後敘述。
Next, the control device 100 executes step S06. In step S06, the control device 100 executes peripheral polishing control, which is to polish the peripheral area of the wafer W rotated by the rotating holding part 40 by the roughening mechanism 70. For example, the control device 100 rotates the wafer W by the rotating holding part 40 while sliding the polishing head 75 on the back side of the wafer W, thereby polishing the peripheral area of the wafer W. The details of the peripheral polishing control are described later.
接著，控制裝置100執行步驟S07。在步驟S07中，控制裝置100係執行外周清洗控制，該外周清洗控制係令粗糙化機構70清洗藉由旋轉固持部40旋轉之晶圓W的外周區域。例如，控制裝置100係一邊藉由旋轉固持部40使晶圓W旋轉，一邊使清洗頭79在晶圓W的背面滑動，藉此清洗晶圓W的外周區域。外周清洗控制中的清洗頭79之驅動步驟(使清洗頭79滑動的方法)，係與外周拋光控制中的拋光頭75之驅動步驟相同。控制裝置100亦可在使清洗頭79相對於晶圓W滑動的期間，藉由未圖示的清洗水供給部將清洗水供給至晶圓W的背面。
Next, the control device 100 executes step S07. In step S07, the control device 100 executes peripheral cleaning control, which causes the roughening mechanism 70 to clean the peripheral area of the wafer W rotated by the rotating holding portion 40. For example, the control device 100 rotates the wafer W by the rotating holding portion 40 while sliding the cleaning head 79 on the back side of the wafer W, thereby cleaning the peripheral area of the wafer W. The driving step of the cleaning head 79 in the peripheral cleaning control (the method of sliding the cleaning head 79) is the same as the driving step of the polishing head 75 in the peripheral polishing control. The control device 100 can also supply cleaning water to the back side of the wafer W by a cleaning water supply unit (not shown) while sliding the cleaning head 79 relative to the wafer W.
接著，控制裝置100執行步驟S08。在步驟S08中，控制裝置100係將已完成拋光及清洗(拋光處理)的晶圓W從拋光單元20搬出。例如，控制裝置100係藉由控制傳遞臂A8，而將搬出對象的晶圓W從拋光單元20搬出至外部。藉由執行
以上步驟S01~08，便完成包含對一片晶圓W之拋光處理的一連串處理。控制裝置100係對每片晶圓W重複執行步驟S01~S08。
Next, the control device 100 executes step S08. In step S08, the control device 100 moves the wafer W that has completed polishing and cleaning (polishing process) out of the polishing unit 20. For example, the control device 100 controls the transfer arm A8 to move the wafer W to be moved out of the polishing unit 20 to the outside. By executing the above steps S01~08, a series of processes including the polishing process for a wafer W is completed. The control device 100 repeats steps S01~S08 for each wafer W.
在圖9的(a)中，係顯示了表示中心拋光控制之一例的流程圖。在中心拋光控制中，首先，控制裝置100執行步驟S31。在步驟S31中，例如，控制裝置100係藉由迴旋機構74使軸線Ax2移動，藉此將軸線Ax2(拋光機構71)配置於起始位置。控制裝置100亦能以使拋光機構71位於固持在固定夾頭53之晶圓W之中心區域的方式，將拋光機構71配置於起始位置。在拋光機構71配置於起始位置的狀態下，軸線Ax2與固持於固定夾頭53之晶圓W的中心亦可大略一致。
In (a) of FIG. 9 , a flowchart showing an example of center polishing control is shown. In center polishing control, first, the control device 100 executes step S31. In step S31, for example, the control device 100 moves the axis Ax2 by the rotary mechanism 74, thereby configuring the axis Ax2 (polishing mechanism 71) at the starting position. The control device 100 can also configure the polishing mechanism 71 at the starting position in such a way that the polishing mechanism 71 is located in the center area of the wafer W held by the fixed chuck 53. When the polishing mechanism 71 is configured at the starting position, the axis Ax2 and the center of the wafer W held by the fixed chuck 53 can also be roughly consistent.
接著，控制裝置100執行步驟S32。在步驟S32中，例如，控制裝置100係開始藉由旋轉機構76、77所進行之拋光頭75的旋轉驅動。亦即，控制裝置100係以軸線Ax1為中心而使拋光頭75旋轉，並使軸線Ax1(旋轉平台81)沿著以軸線Ax2為中心的圓形軌道移動。例如，控制裝置100係基於儲存於儲存裝置123的旋轉動作指令，而驅動旋轉驅動部82、84，使旋轉平台81、83分別以既定旋轉速度(轉速)旋轉。
Next, the control device 100 executes step S32. In step S32, for example, the control device 100 starts the rotation drive of the polishing head 75 by the rotation mechanism 76, 77. That is, the control device 100 rotates the polishing head 75 around the axis Ax1 and moves the axis Ax1 (rotation platform 81) along a circular track around the axis Ax2. For example, the control device 100 drives the rotation drive parts 82, 84 based on the rotation action instruction stored in the storage device 123, so that the rotation platforms 81, 83 rotate at a predetermined rotation speed (rotation speed).
接著，控制裝置100執行步驟S33、S34。在步驟S33中，例如，控制裝置100係一邊使拋光頭75旋轉驅動，一邊藉由升降機構78使拋光頭75上升，直到拋光頭75與晶圓W的背面接觸為止。拋光頭75係一邊旋轉驅動一邊與晶圓W接觸，藉此，拋光頭75會相對於晶圓W滑動而拋光晶圓W的背面。在步驟S34中，例如，控制裝置100係停此藉由旋轉機構76、77所進行之旋轉，藉此停止拋光頭75的旋轉驅動。例如，控制裝置100亦可在拋光頭75與晶圓W接觸並經過既定時間後，停止拋光頭75的旋轉驅動。
Next, the control device 100 executes steps S33 and S34. In step S33, for example, the control device 100 drives the polishing head 75 to rotate while raising the polishing head 75 through the lifting mechanism 78 until the polishing head 75 contacts the back side of the wafer W. The polishing head 75 contacts the wafer W while being driven to rotate, whereby the polishing head 75 slides relative to the wafer W to polish the back side of the wafer W. In step S34, for example, the control device 100 stops the rotation performed by the rotating mechanisms 76 and 77, thereby stopping the rotation drive of the polishing head 75. For example, the control device 100 may also stop the rotation drive of the polishing head 75 after a predetermined time has passed since the polishing head 75 came into contact with the wafer W.
在圖9的(b)中，係顯示了表示外周拋光控制之一例的流程圖。在外周拋光控制中，首先，控制裝置100執行步驟S61。在步驟S61中，例如，控制裝置100係藉由迴旋機構74及旋轉機構76、77而將拋光頭75配置於起始位置。例如，起始位置亦能以使軸線Ax1與軸線Ax3的間隔D3大於軸線Ax2與軸線Ax3的間隔D2，並使拋光頭75的至少一部分與晶圓W的中心區域重疊的方式設定。起始位置亦能以使拋光頭75成為最遠離軸線Ax3的方式設定。又，步驟S61亦可與上述步驟S05的處理並行進行。
In (b) of FIG. 9 , a flowchart showing an example of peripheral polishing control is shown. In peripheral polishing control, first, the control device 100 executes step S61. In step S61, for example, the control device 100 configures the polishing head 75 at the starting position by the rotating mechanism 74 and the rotating mechanisms 76 and 77. For example, the starting position can also be set in a manner that makes the interval D3 between the axis Ax1 and the axis Ax3 greater than the interval D2 between the axis Ax2 and the axis Ax3, and at least a portion of the polishing head 75 overlaps with the center area of the wafer W. The starting position can also be set in a manner that makes the polishing head 75 the farthest from the axis Ax3. In addition, step S61 can also be performed in parallel with the processing of the above-mentioned step S05.
接著，控制裝置100執行步驟S62。在步驟S62中，例如，控制裝置100係開始藉由旋轉驅動部43所進行之晶圓W的旋轉。控制裝置100係基於儲存於儲存裝置123的動作指令，而藉由旋轉驅動部43使晶圓W以既定旋轉速度旋轉。
Next, the control device 100 executes step S62. In step S62, for example, the control device 100 starts the rotation of the wafer W by the rotation drive unit 43. The control device 100 rotates the wafer W at a predetermined rotation speed by the rotation drive unit 43 based on the action command stored in the storage device 123.
接著，控制裝置100執行步驟S63。在步驟S63中，例如，控制裝置100係藉由升降機構78使拋光頭75升高，直到拋光頭75與晶圓W接觸為止。在此例中，控制裝置100係在將藉由旋轉機構76、77所進行之拋光頭75的旋轉驅動停止的狀態下，使拋光頭75升高，而使其與旋轉中的晶圓W之外周區域接觸。
Next, the control device 100 executes step S63. In step S63, for example, the control device 100 raises the polishing head 75 by the lifting mechanism 78 until the polishing head 75 contacts the wafer W. In this example, the control device 100 raises the polishing head 75 while stopping the rotation drive of the polishing head 75 by the rotating mechanisms 76 and 77, so that the polishing head 75 contacts the outer peripheral area of the rotating wafer W.
接著，控制裝置100執行步驟S64、S65。在步驟S64中，控制裝置100控制迴旋機構74及旋轉機構76、77(粗糙化機構70)，以使拋光頭75沿著橫貫晶圓W之外周區域的軌跡移動。所謂橫貫晶圓W之外周區域的軌跡(以下，稱為「橫貫軌跡」)，係指從晶圓W之中心區域的任意點，延伸至晶圓W之外的區域(以下，稱為「晶圓外區域」)的線。控制裝置100亦可在使拋光頭75沿著橫貫軌跡移動時，控制粗糙化機構70，以保持在軸線Ax1與軸線Ax3之間隔D3大於軸線Ax2
與軸線Ax3之間隔D2的狀態。例如，控制裝置100亦可在將藉由旋轉機構76、77所進行之旋轉驅動停止的狀態下，驅動迴旋機構74，以使拋光頭75沿著橫貫軌道移動。由於在步驟S61中，已將拋光機構71(軸線Ax1、Ax2)配置成間隔D3大於間隔D2的狀態，故只要將旋轉機構76、77固定，便可維持間隔D3大於間隔D2的狀態。
Next, the control device 100 executes steps S64 and S65. In step S64, the control device 100 controls the rotating mechanism 74 and the rotating mechanisms 76 and 77 (roughening mechanism 70) to move the polishing head 75 along a trajectory that crosses the outer peripheral area of the wafer W. The so-called trajectory that crosses the outer peripheral area of the wafer W (hereinafter referred to as "cross-trajectory") refers to a line extending from an arbitrary point in the central area of the wafer W to an area outside the wafer W (hereinafter referred to as "wafer outer area"). The control device 100 can also control the roughening mechanism 70 to keep the interval D3 between the axis Ax1 and the axis Ax3 larger than the interval D2 between the axis Ax2 and the axis Ax3 when the polishing head 75 is moved along the transverse track. For example, the control device 100 can also drive the rotary mechanism 74 to move the polishing head 75 along the transverse track while the rotation drive performed by the rotary mechanisms 76 and 77 is stopped. Since the polishing mechanism 71 (axes Ax1 and Ax2) is configured in step S61 so that the interval D3 is larger than the interval D2, the interval D3 can be maintained larger than the interval D2 as long as the rotary mechanisms 76 and 77 are fixed.
控制裝置100亦可在使拋光頭75沿著橫貫軌跡移動時，將藉由旋轉機構76、77所進行之拋光頭75的驅動，與藉由迴旋機構74所進行之驅動加以組合，而調整拋光頭75的移動軌跡。又，控制裝置100亦可在使拋光頭75沿著橫貫軌跡移動時，將藉由旋轉機構76及旋轉機構77中之至少一者所進行之旋轉動作重複進行。此情況下，拋光頭75會一邊在與橫貫軌跡平行的方向及垂直方向上擺動，一邊沿著橫貫軌跡移動。接著，在步驟S65中，當藉由迴旋機構74所進行之拋光頭75沿著橫貫軌跡之移動，從晶圓W之中心區域往晶圓外區域，而結束單程之移動時，控制裝置100會停止晶圓W的旋轉驅動。
The control device 100 may also adjust the moving trajectory of the polishing head 75 by combining the driving of the polishing head 75 by the rotating mechanisms 76 and 77 and the driving by the swivel mechanism 74 when the polishing head 75 is moved along the traverse trajectory. Furthermore, the control device 100 may also repeatedly perform the rotating motion by at least one of the rotating mechanisms 76 and 77 when the polishing head 75 is moved along the traverse trajectory. In this case, the polishing head 75 moves along the traverse trajectory while swinging in a direction parallel to the traverse trajectory and in a direction perpendicular to the traverse trajectory. Next, in step S65, when the polishing head 75 moved along the transverse track from the center area of the wafer W to the outer area of the wafer by the rotating mechanism 74 and the one-way movement is completed, the control device 100 stops the rotation drive of the wafer W.
又，在外周拋光控制中，控制裝置100亦可控制迴旋機構74及旋轉機構76、77，以使拋光頭75沿著橫貫軌跡，而從晶圓外區域往中心區域僅移動單程之移動。或是，控制裝置100亦可控制迴旋機構74及旋轉機構76、77，以使拋光頭75沿著橫貫軌跡，而在晶圓W的中心區域與晶圓外區域之間往復移動。在使拋光頭75沿著橫貫軌跡而往復移動的情況下，控制裝置100亦可在使從晶圓外區域往中心區域移動之拋光頭75，往晶圓外區域折返時，在未與晶圓W重疊之位置上，使拋光頭75的移動方向反轉。藉此，可抑制「起因於折返時之拋光頭75在移動方向上的反轉動作，導致拋光頭75在晶圓W的特定位置長時間滯留」之情形。
Furthermore, in the peripheral polishing control, the control device 100 may also control the rotating mechanism 74 and the rotating mechanisms 76 and 77 so that the polishing head 75 moves only one way along the transverse track from the outer area of the wafer to the central area. Alternatively, the control device 100 may also control the rotating mechanism 74 and the rotating mechanisms 76 and 77 so that the polishing head 75 moves back and forth between the central area and the outer area of the wafer W along the transverse track. When the polishing head 75 is moved back and forth along the transverse track, the control device 100 can also reverse the moving direction of the polishing head 75 at a position that does not overlap with the wafer W when the polishing head 75 moves from the outer area of the wafer to the central area and returns to the outer area of the wafer. In this way, the situation in which "the polishing head 75 is retained at a specific position of the wafer W for a long time due to the reverse action of the polishing head 75 in the moving direction when returning" can be suppressed.
此處，參照圖10，說明在上述步驟S64之外周拋光時的沿著橫貫軌跡之拋光頭75的移動動作，亦包含其他動作的例子。在圖10的表所示之三個例子中，均例示了使拋光頭75沿著橫貫軌跡移動時的動作。控制裝置100亦可使拋光頭75以移動速度維持在既定範圍的方式，沿著橫貫軌跡移動。例如，控制裝置100亦可使拋光頭75(軸線Ax1)以移動速度固定的方式，沿著橫貫軌跡移動。
Here, referring to FIG. 10, the movement of the polishing head 75 along the transverse track during the peripheral polishing in the above-mentioned step S64 is described, and examples of other movements are also included. In the three examples shown in the table of FIG. 10, the movement of the polishing head 75 along the transverse track is illustrated. The control device 100 can also move the polishing head 75 along the transverse track in a manner that the movement speed is maintained within a predetermined range. For example, the control device 100 can also move the polishing head 75 (axis Ax1) along the transverse track in a manner that the movement speed is fixed.
在圖10中的「公轉動作」所示之動作中，控制裝置100係驅動控制旋轉驅動部84，而使拋光頭75環繞軸線Ax2旋轉動作，藉此使拋光頭75沿著橫貫軌跡移動。例如，在粗糙化機構70未包含清洗機構72的情況下，粗糙化機構70亦可未包含迴旋機構74。此情況下，控制裝置100亦可藉由控制旋轉機構76、77，而使拋光頭75沿著橫貫軌跡移動。
In the action shown in the "revolution action" in FIG. 10 , the control device 100 drives and controls the rotation drive unit 84 to rotate the polishing head 75 around the axis Ax2, thereby moving the polishing head 75 along the transverse trajectory. For example, when the roughening mechanism 70 does not include the cleaning mechanism 72, the roughening mechanism 70 may not include the rotation mechanism 74. In this case, the control device 100 may also control the rotation mechanisms 76 and 77 to move the polishing head 75 along the transverse trajectory.
在圖10中的「迴旋動作」所示之動作中，控制裝置100係驅動控制迴旋驅動部87，而使拋光機構71以軸線Ax3為迴旋中心進行迴旋動作，藉此使拋光頭75沿著橫貫軌跡移動。此迴旋動作係與上述步驟S64中的控制裝置100之處理對應。
In the action shown in the "rotation action" in FIG. 10 , the control device 100 drives and controls the rotation drive unit 87, so that the polishing mechanism 71 rotates with the axis Ax3 as the rotation center, thereby moving the polishing head 75 along the transverse trajectory. This rotation action corresponds to the processing of the control device 100 in the above step S64.
在圖10中的「直線前進動作」所示之動作中，係使拋光頭75(軸線Ax2)在晶圓W的半徑方向上，略直線狀地移動，藉此使拋光頭75沿著橫貫軌跡移動。亦即，此情況下，橫貫軌跡與晶圓W的半徑方向係大略一致。為了進行此動作，例如，拋光單元20亦可包含用於使拋光機構71在前後方向上移動的直線前進移動機構，以代替迴旋機構74。此直線前進移動機構亦可包含：移動平台，用於支撐拋光機構71；及直線前進驅動部(第三驅動部)，使該移動平台(軸線Ax2)在前後方向上往復移動。例如，控制裝置100亦可在外周拋光控制的執行時，藉由控制「以拋光頭75、旋轉機構76、77及上述直線前進驅動部所構成之拋光部」，
而使拋光頭75(軸線Ax2)沿著橫貫軌跡移動。例如，直線前進移動機構中，移動平台亦可配置成支撐升降機構78。
In the action shown in the "straight-line forward action" in FIG. 10 , the polishing head 75 (axis Ax2) is moved in a substantially straight line in the radial direction of the wafer W, thereby moving the polishing head 75 along the transverse trajectory. That is, in this case, the transverse trajectory is roughly consistent with the radial direction of the wafer W. In order to perform this action, for example, the polishing unit 20 may also include a straight-line forward movement mechanism for moving the polishing mechanism 71 in the front-rear direction, instead of the rotating mechanism 74. This straight-line forward movement mechanism may also include: a moving platform for supporting the polishing mechanism 71; and a straight-line forward drive unit (third drive unit) for reciprocating the moving platform (axis Ax2) in the front-rear direction. For example, the control device 100 can also control the "polishing section composed of the polishing head 75, the rotating mechanisms 76, 77 and the above-mentioned linear forward driving section" during the execution of peripheral polishing control, so as to move the polishing head 75 (axis Ax2) along the transverse track. For example, in the linear forward moving mechanism, the moving platform can also be configured to support the lifting mechanism 78.
如圖10所示，公轉動作、迴旋動作及直線前進動作，係依此順序更接近「沿著晶圓W之半徑方向的軌跡」。控制裝置100亦可藉由控制迴旋機構74及旋轉機構77，而將公轉動作與迴旋動作加以組合，而使拋光頭75之移動更接近沿著晶圓W之半徑方向的軌跡。
As shown in FIG10 , the revolution, rotation and linear forward movement are closer to the “trajectory along the radial direction of the wafer W” in this order. The control device 100 can also combine the revolution and rotation by controlling the rotation mechanism 74 and the rotation mechanism 77, so that the movement of the polishing head 75 is closer to the trajectory along the radial direction of the wafer W.
(本發明之實施態樣的效果)
(Effects of the implementation of the present invention)
依本發明之實施態樣的塗佈顯影裝置2具備粗糙化機構70，其包含：拋光頭75，用於拋光晶圓W的主面；旋轉驅動部82，使拋光頭75繞晚軸線Ax1旋轉；及旋轉驅動部84，使軸線Ax1沿著環繞與軸線Ax1平行之軸線Ax2的圓形軌道移動。拋光頭75的中心位置係與軸線Ax1不同。與環繞軸線Ax1的拋光頭75之可動範圍的直徑相比，拋光頭75的外徑較小。
The coating and developing device 2 according to the embodiment of the present invention has a roughening mechanism 70, which includes: a polishing head 75 for polishing the main surface of the wafer W; a rotary drive unit 82 for rotating the polishing head 75 around the axis Ax1; and a rotary drive unit 84 for moving the axis Ax1 along a circular track around the axis Ax2 parallel to the axis Ax1. The center position of the polishing head 75 is different from the axis Ax1. Compared with the diameter of the movable range of the polishing head 75 around the axis Ax1, the outer diameter of the polishing head 75 is smaller.
例如，一般認為係藉由具有與旋轉平台81相同程度之面積的實心圓柱狀之拋光頭，而拋光晶圓W的背面。在此構成中，於拋光時的某個瞬間中，拋光頭與晶圓W接觸的面積會變得較大，導致在拋光頭內容易產生取決於對晶圓W之接觸條件的拋光程度為不同的位置。在晶圓W包含有翹曲的情況下，拋光頭可能無法跟隨該翹曲。就其結果而言，會有產生拋光程度彼此不同之拋光不均勻的疑慮。相對於此，在上述塗佈顯影裝置2中，由於和藉由旋轉驅動部82所生成之拋光頭75的移動軌跡之外緣的直徑相比，拋光頭75的外徑Dh較小，故拋光頭75較不會與晶圓W不均勻接觸。因此，在拋光頭75內，能以大略均一的接觸條件
與晶圓W接觸，而拋光晶圓W。其結果，在塗佈顯影裝置2中，可減少拋光晶圓W時所產生的拋光不均勻。
For example, it is generally considered that the back side of the wafer W is polished by a solid cylindrical polishing head having the same area as the rotating platform 81. In this configuration, at a certain moment during polishing, the area where the polishing head and the wafer W are in contact becomes larger, which makes it easy for positions in the polishing head to have different polishing degrees depending on the contact conditions with the wafer W. In the case where the wafer W includes warp, the polishing head may not be able to follow the warp. As a result, there is a concern that uneven polishing will occur with different polishing degrees. In contrast, in the coating and developing device 2, since the outer diameter Dh of the polishing head 75 is smaller than the outer diameter of the moving track of the polishing head 75 generated by the rotary drive unit 82, the polishing head 75 is less likely to contact the wafer W unevenly. Therefore, the polishing head 75 can contact the wafer W with roughly uniform contact conditions and polish the wafer W. As a result, in the coating and developing device 2, the uneven polishing generated when polishing the wafer W can be reduced.
再者，在塗佈顯影裝置2中，拋光頭75的中心位置係相對於軸線Ax1偏心的位置。藉此，即使係較不會不均勻接觸之較小外徑的拋光頭75，相較於使拋光頭75的中心位置與軸線Ax1大略一致的情況，亦可使拋光頭75在較廣的範圍移動。因此，可同時實現拋光條件之均勻性與生產效率兩者。又，由於即使在使拋光頭75的中心位置與軸線Ax1大略一致的情況下，亦如上述至少對於拋光不均勻的減少有其效用，故拋光頭75的中心位置相對於軸線Ax1偏心之條件並非必要。
Furthermore, in the coating and developing device 2, the center position of the polishing head 75 is eccentric relative to the axis Ax1. Thus, even if the polishing head 75 has a smaller outer diameter and is less likely to have uneven contact, the polishing head 75 can be moved in a wider range than when the center position of the polishing head 75 is roughly aligned with the axis Ax1. Therefore, both the uniformity of the polishing conditions and the production efficiency can be achieved at the same time. Moreover, since even when the center position of the polishing head 75 is roughly aligned with the axis Ax1, it is at least effective in reducing the uneven polishing as described above, the condition that the center position of the polishing head 75 is eccentric relative to the axis Ax1 is not necessary.
在塗佈顯影裝置2中，拋光頭75的外徑Dh為5mm~12mm。藉由使外徑Dh在12mm以下，可抑制拋光頭75在不均勻接觸之狀態下與晶圓W接觸(滑動)之情形。又，藉由使外徑Dh在5mm以上，可抑制「拋光頭75與晶圓W接觸時，拋光頭75相對於晶圓W之背面過度傾斜，導致拋光頭75與晶圓W不均勻接觸之情形」。其結果，可減少拋光晶圓W時所產生的拋光不均勻。
In the coating and developing device 2, the outer diameter Dh of the polishing head 75 is 5mm~12mm. By making the outer diameter Dh below 12mm, the polishing head 75 can be prevented from contacting (slipping) with the wafer W in an uneven contact state. In addition, by making the outer diameter Dh above 5mm, "when the polishing head 75 contacts the wafer W, the polishing head 75 is excessively tilted relative to the back of the wafer W, resulting in uneven contact between the polishing head 75 and the wafer W" can be prevented. As a result, the uneven polishing generated when polishing the wafer W can be reduced.
在塗佈顯影裝置2中，拋光頭75係形成為環狀。因此，在抑制拋光時的拋光頭之傾斜的同時，和具有相同外徑之實心圓柱狀之拋光頭相比，可減少拋光頭75中的晶圓W之接觸面積。藉此，由於可使拋光頭75的整個拋光面更強固地與晶圓W接觸，故可更減少拋光晶圓W時所產生的拋光不均勻。
In the coating development device 2, the polishing head 75 is formed in a ring shape. Therefore, while suppressing the inclination of the polishing head during polishing, the contact area of the polishing head 75 with the wafer W can be reduced compared with a solid cylindrical polishing head having the same outer diameter. In this way, since the entire polishing surface of the polishing head 75 can be more firmly in contact with the wafer W, the polishing unevenness generated when polishing the wafer W can be further reduced.
在塗佈顯影裝置2中，軸線Ax1與軸線Ax2之間隔D1，係在環繞軸線Ax1的拋光頭75之可動範圍的半徑以下。此情況下，在進行中心拋光時，可藉由旋轉機
構76、77使拋光頭75旋轉驅動，而在不使軸線Ax2移動的情況下，拋光晶圓W之中心區域的整個區域。其結果，可使晶圓W的生產效率提高。
In the coating and developing device 2, the interval D1 between the axis Ax1 and the axis Ax2 is less than the radius of the movable range of the polishing head 75 around the axis Ax1. In this case, when performing center polishing, the polishing head 75 can be driven to rotate by the rotating mechanism 76, 77, and the entire center area of the wafer W can be polished without moving the axis Ax2. As a result, the production efficiency of the wafer W can be improved.
塗佈顯影裝置2更包含：旋轉固持部40，固持晶圓W的中心區域並使晶圓W旋轉；周緣固持部50，固持晶圓W的外周區域；及控制裝置100，執行以下控制：中心拋光控制，一邊使晶圓W固持於周緣固持部50，一邊藉由拋光頭75拋光晶圓W的中心區域；及外周拋光控制，一邊藉由旋轉固持部40使晶圓W旋轉，一邊令拋光頭75拋光晶圓W的外周區域。在外周拋光控制中，控制裝置100係控制粗糙化機構70，以使拋光頭75沿著橫貫外周區域的軌跡移動。於情況下，由於係在拋光頭75不會停留於晶圓W的半徑方向上某一處的情況下，進行外周拋光，故可減少拋光晶圓W時的拋光不均勻。
The coating and developing device 2 further includes: a rotating holding portion 40 that holds the central region of the wafer W and rotates the wafer W; a peripheral holding portion 50 that holds the peripheral region of the wafer W; and a control device 100 that performs the following control: a central polishing control that polishes the central region of the wafer W by a polishing head 75 while holding the wafer W in the peripheral holding portion 50; and a peripheral polishing control that polishes the peripheral region of the wafer W by a polishing head 75 while rotating the wafer W by the rotating holding portion 40. In the peripheral polishing control, the control device 100 controls the roughening mechanism 70 so that the polishing head 75 moves along a trajectory that crosses the peripheral region. In this case, since the peripheral polishing is performed without the polishing head 75 staying at a certain point in the radial direction of the wafer W, the uneven polishing when polishing the wafer W can be reduced.
粗糙化機構70更包含使軸線Ax2移動的迴旋驅動部87，或是直線前進移動機構。在使拋光頭75沿著橫貫外周區域的軌跡移動時，控制裝置100係控制粗糙化機構70，藉由迴旋驅動部87或是直線前進移動機構，而使軸線Ax2移動。此情況下，由於和藉由旋轉機構76、77而使拋光頭75沿著橫貫軌跡移動相比，拋光頭75會以更接近晶圓W之半徑方向的軌跡移動，故可更減少拋光不均勻。
The roughening mechanism 70 further includes a rotary drive unit 87 or a linear forward movement mechanism for moving the axis Ax2. When the polishing head 75 is moved along a trajectory that crosses the peripheral area, the control device 100 controls the roughening mechanism 70 to move the axis Ax2 by the rotary drive unit 87 or the linear forward movement mechanism. In this case, compared with the case where the polishing head 75 is moved along a transverse trajectory by the rotating mechanisms 76 and 77, the polishing head 75 moves along a trajectory that is closer to the radius direction of the wafer W, so that the polishing unevenness can be further reduced.
迴旋驅動部87係使軸線Ax2沿著「環繞與軸線Ax2平行之軸線Ax3的圓形軌道」移動。此情況下，由於係藉由迴旋驅動部87而使拋光頭75沿著橫貫軌跡移動，故可簡化拋光單元20的構造。又，在上述實施態樣中，係使用將拋光機構71及清洗機構72的配置位置加以切換的迴旋驅動部87，而使拋光頭75沿著橫貫軌跡移動。因此，可更簡化拋光單元20的構造。
The rotary drive unit 87 moves the axis Ax2 along a "circular track around the axis Ax3 parallel to the axis Ax2". In this case, since the polishing head 75 is moved along the transverse track by the rotary drive unit 87, the structure of the polishing unit 20 can be simplified. In addition, in the above-mentioned embodiment, the rotary drive unit 87 that switches the configuration positions of the polishing mechanism 71 and the cleaning mechanism 72 is used to move the polishing head 75 along the transverse track. Therefore, the structure of the polishing unit 20 can be further simplified.
在塗佈顯影裝置2中，使拋光頭75沿著橫貫外周區域的軌跡移動時，控制裝置100係控制迴旋機構74及旋轉機構76、77，以保持在軸線Ax1與軸線Ax3之間隔D3大於軸線Ax2與軸線Ax3之間隔D2的狀態。此情況下，由於以軸線Ax3為中心之圓形軌道中的拋光頭75之移動軌跡的半徑較大，故可使藉由迴旋機構74所進行之拋光頭75的移動，更接近晶圓W的半徑方向。因此，可更減少該半徑方向上的拋光程度之落差。
In the coating and developing device 2, when the polishing head 75 is moved along the track that crosses the peripheral area, the control device 100 controls the rotating mechanism 74 and the rotating mechanisms 76 and 77 to maintain the state in which the interval D3 between the axis Ax1 and the axis Ax3 is greater than the interval D2 between the axis Ax2 and the axis Ax3. In this case, since the radius of the moving track of the polishing head 75 in the circular track centered on the axis Ax3 is larger, the movement of the polishing head 75 by the rotating mechanism 74 can be closer to the radial direction of the wafer W. Therefore, the difference in the polishing degree in the radial direction can be further reduced.
在塗佈顯影裝置2中，使拋光頭75沿著橫貫外周區域的軌跡移動時，控制裝置100係控制旋轉機構76、77，以藉由旋轉驅動部84使軸線Ax1移動。在使用旋轉機構77而使拋光頭75沿著橫貫軌跡移動的情況下，例如，在進行外周拋光時，可不需要迴旋機構74而簡化拋光單元20的構造。或是，在除了迴旋機構74之外，亦使用旋轉機構77而使拋光頭75沿著橫貫軌跡移動的情況下，可調整拋光頭75的移動軌跡，以更接近晶圓W之半徑方向。
In the coating and developing device 2, when the polishing head 75 is moved along a trajectory that crosses the peripheral area, the control device 100 controls the rotating mechanisms 76 and 77 to move the axis Ax1 through the rotating drive unit 84. When the polishing head 75 is moved along the transverse trajectory using the rotating mechanism 77, for example, when peripheral polishing is performed, the rotating mechanism 74 is not required and the structure of the polishing unit 20 is simplified. Alternatively, when the polishing head 75 is moved along the transverse trajectory using the rotating mechanism 77 in addition to the rotating mechanism 74, the moving trajectory of the polishing head 75 can be adjusted to be closer to the radial direction of the wafer W.
圖11係顯示了對晶圓W之背面的拋光處理之評價結果之一例。在比較例中，關於拋光頭，係使用具有「與藉由旋轉驅動部82所生成之拋光頭的移動軌跡之外緣大略相同的外徑(65mm)」的拋光頭而進行驗證。在實施例中，關於拋光頭，係使用具有「小於藉由旋轉驅動部82所生成之拋光頭的移動軌跡之外緣的外徑(9mm)」的拋光頭75而進行驗證。又，在比較例中，係藉由公轉動作而使拋光頭沿著半徑方向移動，在實施例中，係藉由迴旋動作而使拋光頭沿著半徑方向移動，而進行驗證。又，比較例及實施例均分別以相同條件，對兩片晶圓W驗證拋光處理結果。
FIG. 11 shows an example of the evaluation results of the polishing process on the back side of the wafer W. In the comparative example, the polishing head was verified using a polishing head having "an outer diameter (65 mm) substantially the same as the outer edge of the moving track of the polishing head generated by the rotary drive unit 82". In the embodiment, the polishing head was verified using a polishing head 75 having "an outer diameter (9 mm) smaller than the outer edge of the moving track of the polishing head generated by the rotary drive unit 82". In addition, in the comparative example, the polishing head was moved in the radial direction by the revolution motion, while in the embodiment, the polishing head was moved in the radial direction by the rotation motion for verification. In addition, the comparative example and the embodiment both use the same conditions to verify the polishing results of two wafers W.
關於驗證方法，係取得拋光後之晶圓W的被拋光面之影像資訊，並從該影像資訊沿著晶圓W的半徑方向而取得表示拋光程度的指標值。在比較例中，吾人發現當確認到一片晶圓W中的指標值之變化時，指標值會在半徑方向上變動。又，吾人發現當將第一片晶圓W與第二片晶圓W加以比較時，在不同之晶圓W間，彼此之指標值的差異較大，且指標值的變化傾向係彼此不同。相對於此，在實施例中，吾人發現當確認到一片晶圓W中的指標值之變化時，和比較例相比，指標值在半徑方向上的變動較小。又，吾人發現，在第一片晶圓W與第二片晶圓W之間，和比較例相比，指標值之變化傾向的差異較小。亦即，吾人發現上述塗佈顯影裝置2(拋光單元20)對於拋光不均勻的減少係有其效用。
Regarding the verification method, image information of the polished surface of the wafer W after polishing is obtained, and an index value indicating the degree of polishing is obtained from the image information along the radial direction of the wafer W. In the comparative example, we found that when the change of the index value in a wafer W is confirmed, the index value will change in the radial direction. In addition, we found that when the first wafer W is compared with the second wafer W, the difference between the index values of different wafers W is large, and the change tendency of the index value is different from each other. In contrast, in the embodiment, we found that when the change of the index value in a wafer W is confirmed, the change of the index value in the radial direction is smaller than that in the comparative example. Furthermore, we found that the difference in the change tendency of the index value between the first wafer W and the second wafer W is smaller than that of the comparative example. That is, we found that the above-mentioned coating and developing device 2 (polishing unit 20) is effective in reducing polishing unevenness.
以上，雖說明了實施態樣，但本發明不一定限定於上述實施態樣，而係可在不脫離其主旨的範圍內，進行各式各樣的變更。例如，處理對象之基板並不限於半導體晶圓，例如亦可為玻璃基板、遮罩基板、FPD(Flat Panel Display：平面顯示器)等。
Although the above describes the implementation, the present invention is not necessarily limited to the above implementation, but can be modified in various ways without departing from the scope of its main purpose. For example, the substrate to be processed is not limited to semiconductor wafers, and can also be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc.
又，上述具體例亦包含以下構成。
Furthermore, the above specific example also includes the following structure.
(附記1)
(Note 1)
一種基板處理裝置，具備拋光部，該拋光部包含：拋光頭，用於拋光基板的主面；第一驅動部，使該拋光頭環繞第一軸旋轉；及第二驅動部，使該第一軸沿著環繞與該第一軸平行之第二軸的圓形軌道移動；該拋光頭的外徑為5mm~12mm。
A substrate processing device has a polishing section, which includes: a polishing head for polishing the main surface of the substrate; a first driving section for rotating the polishing head around a first axis; and a second driving section for moving the first axis along a circular track around a second axis parallel to the first axis; the outer diameter of the polishing head is 5mm~12mm.
(附記2)
(Note 2)
如附記1所記載的基板處理裝置，其中，該拋光頭外徑為6~11mm。
The substrate processing device described in Note 1, wherein the outer diameter of the polishing head is 6~11mm.
(附記3)
(Note 3)
如附記2所記載的基板處理裝置，其中，該拋光頭的外徑為8~10mm。
The substrate processing device described in Note 2, wherein the outer diameter of the polishing head is 8~10mm.
