TWI834421B - Lead frame structure - Google Patents

Lead frame structure Download PDF

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TWI834421B
TWI834421B TW111147056A TW111147056A TWI834421B TW I834421 B TWI834421 B TW I834421B TW 111147056 A TW111147056 A TW 111147056A TW 111147056 A TW111147056 A TW 111147056A TW I834421 B TWI834421 B TW I834421B
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lead
lead frame
groove
dimension
substrate
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TW111147056A
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TW202326993A (en
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大為 邢
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大陸商先進半導體材料(深圳)有限公司
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一種引線框結構,包括:基板,所述基板包括相對的第一面和第二面,所述基板包括:若干晶片裝載區;位於各晶片裝載區周圍的引線區,所述引線區包括若干凸起的引線部,相鄰引線部之間、以及引線部和晶片裝載區之間具有自第一面向第二面延伸的凹槽,所述凹槽具有沿垂直於基板表面方向上分佈的最窄部和最寬部,所述最窄部與基板第一面表面之間的間距小於所述最寬部與基板第一面表面之間的間距。所述結構能夠提升塑封後器件的可靠性。 A lead frame structure includes: a base plate, the base plate includes opposite first and second sides, the base plate includes: a plurality of wafer loading areas; a lead area located around each wafer loading area, the lead area includes a plurality of protrusions There are grooves extending from the first surface to the second surface between adjacent lead parts and between the lead parts and the wafer loading area, and the grooves have the narrowest grooves distributed in a direction perpendicular to the surface of the substrate. The distance between the narrowest part and the first surface of the substrate is smaller than the distance between the widest part and the first surface of the substrate. The structure can improve the reliability of the device after plastic packaging.

Description

引線框結構 Lead frame structure

本發明涉及半導體封裝領域,尤其涉及一種引線框結構。 The invention relates to the field of semiconductor packaging, and in particular to a lead frame structure.

本發明要求於2021年12月17日提交中國專利局、申請號為202111550500.9、發明名稱為“引線框結構”的中國專利申請的優先權,其全部內容通過引用結合在本發明中。 This application claims priority to the Chinese patent application filed with the China Patent Office on December 17, 2021, with the application number 202111550500.9 and the invention name " Lead Frame Structure ", the entire content of which is incorporated into the present invention by reference.

近年來,隨著半導體器件的尺寸和體積不斷向小型化發展,這就使得半導體制程後段的封裝要求越來越高。為了滿足這樣的要求,人們提出了各種四方扁平無引腳封裝(Quad Flat No-leads Package,QFN)型半導體器件,該半導體器件使用引線框架,用密封樹脂密封安裝在其安裝面上的半導體元件,同時使引線的一部分露出背面而構成。 In recent years, as the size and volume of semiconductor devices have continued to become miniaturized, the packaging requirements in the latter part of the semiconductor process have become increasingly higher. In order to meet such requirements, various Quad Flat No-leads Package (QFN) type semiconductor devices have been proposed, which use a lead frame and seal the semiconductor element mounted on its mounting surface with a sealing resin. , while leaving part of the lead exposed on the back.

現有的封裝工藝還需要不斷改善以滿足更高的要求。 Existing packaging processes still need to be continuously improved to meet higher requirements.

本發明解決的技術問題是提供一種引線框結構,以滿足更高的要求的封裝工藝。 The technical problem solved by the present invention is to provide a lead frame structure to meet higher requirements of packaging technology.

為解決上述技術問題,本發明技術方案提供一種引線框結構,包括:基板,所述基板包括相對的第一面和第二面,所述基板包括:若干晶片裝載區;位於各晶片裝載區周圍的引線區,所述引線區包括若干凸起的引線部,相鄰引線部之間、以及引線部和晶片裝載區之間具有自第一面向第二面延伸的凹槽,所述凹槽具有沿垂直於基板表面方向上分佈的最窄部和最寬部,所述最窄部與基板第一面表面之間的間距小於所述最寬部與基板第一面表面之間 的間距。 In order to solve the above technical problems, the technical solution of the present invention provides a lead frame structure, including: a substrate, the substrate includes an opposite first side and a second side, the substrate includes: a plurality of wafer loading areas; located around each wafer loading area The lead area includes a plurality of protruding lead portions, with grooves extending from the first surface to the second surface between adjacent lead portions and between the lead portions and the wafer loading area, and the grooves have The narrowest part and the widest part distributed in the direction perpendicular to the substrate surface, the distance between the narrowest part and the first surface of the substrate is smaller than the distance between the widest part and the first surface of the substrate spacing.

可選的,所述凹槽包括第一分部和位於第一分部底部的第二分部,所述第二分部的頂部與第一分部的底部相連通,所述第二分部的側壁表面為凹陷表面。 Optionally, the groove includes a first subpart and a second subpart located at the bottom of the first subpart, the top of the second subpart is connected with the bottom of the first subpart, and the second subpart The side wall surface is a concave surface.

可選的,所述最窄部為第一分部的底部和第二分部的頂部,所述第一分部在平行於引線框表面的第一方向和第二方向上的頂部具有第一尺寸,所述最窄部在第一方向和第二方向上具有第二尺寸,所述最寬部在第一方向和第二方向上的最大尺寸為第三尺寸,所述第一方向和第二方向垂直,所述第一尺寸大於第二尺寸,所述第二尺寸小於第三尺寸。 Optionally, the narrowest part is the bottom of the first subsection and the top of the second subsection, and the top of the first subsection in the first direction and the second direction parallel to the surface of the lead frame has a first size, the narrowest part has a second size in the first direction and the second direction, the largest size of the widest part in the first direction and the second direction is a third size, the first direction and the second direction The two directions are perpendicular, the first dimension is larger than the second dimension, and the second dimension is smaller than the third dimension.

可選的,所述第二分部的底部表面為凹陷表面,或者,所述第二分部的底部表面為平面。 Optionally, the bottom surface of the second part is a concave surface, or the bottom surface of the second part is a plane.

可選的,所述凹槽在垂直於引線框表面的方向上的截面為軸對稱圖形,所述第三尺寸單側大於第二尺寸的範圍為大於10微米。 Optionally, the cross-section of the groove in a direction perpendicular to the surface of the lead frame is an axially symmetrical figure, and the range in which the third dimension is larger than the second dimension on one side is greater than 10 microns.

可選的,所述凹槽還包括:位於第二分部底部的第三分部,所述第三分部的頂部與第二分部的底部相連通,所述第三分部的側壁表面為凹陷表面。 Optionally, the groove further includes: a third subsection located at the bottom of the second subsection, the top of the third subsection is connected with the bottom of the second subsection, and the side wall surface of the third subsection is a concave surface.

可選的,所述第二分部在第一方向和第二方向上的底部和第三分部在第一方向和第二方向上的頂部具有第四尺寸,所述第三分部在第一方向上的最大尺寸為最寬部的第三尺寸,所述第四尺寸小於第三尺寸,所述第四尺寸大於第二尺寸。 Optionally, the bottom of the second subsection in the first direction and the second direction and the top of the third subsection in the first direction and the second direction have a fourth size, and the third subsection has a fourth size in the first direction and the second direction. The largest dimension in one direction is the third dimension of the widest part, the fourth dimension is smaller than the third dimension, and the fourth dimension is larger than the second dimension.

可選的,所述凹槽在垂直於引線框表面的方向上的截面為軸對稱圖形,所述第三尺寸單側大於第四尺寸的範圍為大於10微米。 Optionally, the cross-section of the groove in a direction perpendicular to the surface of the lead frame is an axially symmetrical figure, and the range in which the third dimension is larger than the fourth dimension on one side is greater than 10 microns.

可選的,所述第三分部的底部表面為凹陷表面,或者,所述第三分部的底部表面為平面。 Optionally, the bottom surface of the third part is a concave surface, or the bottom surface of the third part is a plane.

可選的,所述晶片裝載區在基板表面的投影圖形為矩形。 Optionally, the projection pattern of the wafer loading area on the surface of the substrate is a rectangle.

可選的,所述引線區包括若干圈子區域,若干圈所述子區域環繞所述晶片裝載區同心分佈,任一圈子區域內具有若干相互分立的引線部。 Optionally, the lead area includes several circle areas, and several circles of the sub-areas are concentrically distributed around the wafer loading area. There are several mutually separated lead parts in any circle area.

可選的,相鄰兩圈引線部的中軸線不重合。 Optionally, the central axes of two adjacent turns of the lead portion do not overlap.

可選的,所述基板還包括若干自基板第一面向第二面貫穿的通孔,所述通孔位於部分所述引線區之間,或者所述通孔位於部分晶片裝載區和引線區之間。 Optionally, the substrate further includes a plurality of through holes penetrating from the first surface to the second surface of the substrate, and the through holes are located between part of the lead areas, or the through holes are located between part of the wafer loading area and the lead area. between.

可選的,所述基板還包括:若干自第二面向第一面延伸且與所述凹槽相連通的開口。 Optionally, the base plate further includes: a plurality of openings extending from the second surface to the first surface and connected with the groove.

可選的,所述基板的材料包括金屬,所述金屬包括銅、銅合金或鎳含量為42%的鐵鎳合金。 Optionally, the material of the substrate includes metal, and the metal includes copper, copper alloy, or iron-nickel alloy with a nickel content of 42%.

可選的,相鄰引線部的中心點在第一方向或第二方向之間的尺寸範圍為大於等於0.4毫米。 Optionally, the size range of the center points of adjacent lead portions between the first direction or the second direction is greater than or equal to 0.4 mm.

可選的,所述凹槽最窄部的尺寸範圍為大於等於0.1毫米;所述凹槽的深度為所述基板厚度的50%~70%。 Optionally, the size range of the narrowest part of the groove is greater than or equal to 0.1 mm; the depth of the groove is 50% to 70% of the thickness of the substrate.

與現有技術相比,本發明的技術方案具有以下有益效果: Compared with the existing technology, the technical solution of the present invention has the following beneficial effects:

本發明的技術方案,所述引線框結構相鄰引線部之間、以及引線部和晶片裝載區之間具有自第一面向第二面延伸的凹槽,所述凹槽具有沿垂直於基板表面方向上分佈的最窄部和最寬部,所述最窄部與基板第一面表面之間的間距小於所述最寬部與基板第一面表面之間的間距。從而所述凹槽沿垂直於引線框表面的方向上的尺寸是不規則變化的,使得後續在塑封時填入到凹槽內的塑封材料與凹槽能夠實現物理上的卡位元結構,提升塑封材料與凹槽側壁的結合力,能夠提升塑封後器件的可靠性。 According to the technical solution of the present invention, the lead frame structure has grooves extending from the first surface to the second surface between adjacent lead portions and between the lead portions and the wafer loading area, and the grooves have a direction perpendicular to the substrate surface. The narrowest part and the widest part are distributed in the direction, and the distance between the narrowest part and the first surface of the substrate is smaller than the distance between the widest part and the first surface of the substrate. Therefore, the size of the groove in the direction perpendicular to the surface of the lead frame changes irregularly, so that the molding material and the groove filled into the groove during subsequent molding can achieve a physical blocking structure, improving the The bonding force between the plastic packaging material and the groove sidewall can improve the reliability of the device after plastic packaging.

進一步,所述凹槽包括第一分部和位於第一分部底部的第二分部,所述第一分部在平行於引線框表面的第一方向上的頂部具有第一尺寸,所述第一分部在第一方向上的底部和第二分部在第一方向上的頂部具有第二尺 寸,所述第二分部在第一方向上的最大尺寸為第三尺寸,所述第一尺寸大於第二尺寸,所述第二尺寸小於第三尺寸。所述第二尺寸小於第三尺寸,從而後續填入到凹槽內的塑封材料與凹槽能夠實現物理上的卡位元結構,提升塑封材料與凹槽側壁的結合力,提升塑封後器件的可靠性。 Further, the groove includes a first portion and a second portion located at the bottom of the first portion, the top of the first portion having a first size in a first direction parallel to the surface of the lead frame, the The bottom of the first portion in the first direction and the top of the second portion in the first direction have a second dimension. size, the maximum size of the second portion in the first direction is a third size, the first size is larger than the second size, and the second size is smaller than the third size. The second size is smaller than the third size, so that the plastic packaging material and the groove subsequently filled into the groove can achieve a physical snap-in structure, improve the bonding force between the plastic packaging material and the side wall of the groove, and improve the strength of the device after plastic packaging. reliability.

100:引線框 100: Lead frame

101,205:凹槽 101,205: Groove

102:晶片 102:Chip

103:引線 103:Lead

104:塑封層 104:Plastic sealing layer

200:基板 200:Substrate

201:第一面 201: First side

202:第二面 202:Second side

204:引線部 204: Lead part

206,306,406,506:第一分部 206,306,406,506: Division 1

207,307,407,507:第二分部 207,307,407,507:Second Division

408,508:第三分部 408,508: Division 3

620,720:開口 620,720:Open

AA1,BB1:方向 AA1,BB1: direction

d1:第一尺寸 d1: first size

d2:第二尺寸 d2: second size

d3:第三尺寸 d3: third dimension

d4:第四尺寸 d4: fourth dimension

I:晶片裝載區 I:wafer loading area

II:子區域 II: Sub-area

X:第一方向 X: first direction

Y:第二方向 Y: second direction

圖1和圖2是一實施例中封裝結構形成過程的剖面結構示意圖; Figures 1 and 2 are schematic cross-sectional structural diagrams of the packaging structure formation process in one embodiment;

圖3至圖5是本發明一實施例中引線框結構的示意圖; 3 to 5 are schematic diagrams of the lead frame structure in an embodiment of the present invention;

圖6是本發明另一實施例中引線框結構的示意圖; Figure 6 is a schematic diagram of a lead frame structure in another embodiment of the present invention;

圖7是本發明另一實施例中引線框結構的示意圖; Figure 7 is a schematic diagram of a lead frame structure in another embodiment of the present invention;

圖8是本發明另一實施例中引線框結構的示意圖; Figure 8 is a schematic diagram of a lead frame structure in another embodiment of the present invention;

圖9是本發明另一實施例中引線框結構的示意圖; Figure 9 is a schematic diagram of a lead frame structure in another embodiment of the present invention;

圖10是本發明另一實施例中引線框結構的示意圖。 Figure 10 is a schematic diagram of a lead frame structure in another embodiment of the present invention.

如先前技術所述,現有的封裝工藝還需要不斷改善以滿足更高的要求。現結合具體的實施例進行分析說明。 As mentioned in the prior art, existing packaging processes still need to be continuously improved to meet higher requirements. Analysis and description will now be carried out with reference to specific examples.

圖1和圖2是一實施例中封裝結構形成過程的剖面結構示意圖。 1 and 2 are schematic cross-sectional structural diagrams of the packaging structure forming process in one embodiment.

請參考圖1,提供引線框100,所述引線框100包括焊盤區(未標示)、引線部(未標示)以及位於焊盤區和引線部之間的凹槽101;提供晶片102,將所述晶片102固定於焊盤區上;提供引線103,所述引線電連接所述晶片102和引線部。 Referring to FIG. 1 , a lead frame 100 is provided. The lead frame 100 includes a pad area (not labeled), a lead portion (not labeled), and a groove 101 between the pad area and the lead portion; a chip 102 is provided. The chip 102 is fixed on the pad area; leads 103 are provided, and the leads are electrically connected to the chip 102 and the lead portion.

請參考圖2,在引線框100上形成塑封層104,所述晶片102和引線103位於所述塑封層104內,所述塑封層104還位於所述凹槽101內。 Please refer to FIG. 2 , a plastic sealing layer 104 is formed on the lead frame 100 , the chip 102 and the leads 103 are located in the plastic sealing layer 104 , and the plastic sealing layer 104 is also located in the groove 101 .

所述封裝結構,所述塑封層104位於所述凹槽101內,從而所 述塑封層104與引線框100表面的接觸面積變大,從而使得所述塑封層104與引線框100之間的結合力變大,有利於提升所述封裝結構的可靠性。 In the packaging structure, the plastic sealing layer 104 is located in the groove 101, so that the The contact area between the plastic layer 104 and the lead frame 100 becomes larger, thereby increasing the bonding force between the plastic layer 104 and the lead frame 100 , which is beneficial to improving the reliability of the packaging structure.

然而,由於所述凹槽101是上寬下窄的碗狀結構,所述塑封層104與引線框100之間完全靠表面結合力黏結,當遇到溫度變化或有外力時,很容易發生塑封層104與引線框100的分層而導致晶片失效。 However, since the groove 101 is a bowl-shaped structure with a wide top and a narrow bottom, the plastic sealing layer 104 and the lead frame 100 are completely bonded by surface bonding force. When encountering temperature changes or external forces, plastic sealing can easily occur. Delamination of layer 104 from lead frame 100 results in wafer failure.

為了解決上述問題,本發明技術方案提供一種引線框結構,所述引線框結構相鄰引線部之間、以及引線部和晶片裝載區之間具有自第一面向第二面延伸的凹槽,所述凹槽具有沿垂直於基板表面方向上分佈的最窄部和最寬部,所述最窄部與基板第一面表面之間的間距小於所述最寬部與基板第一面表面之間的間距。從而所述凹槽沿垂直於引線框表面的方向上的尺寸是不規則變化的,使得後續在塑封時填入到凹槽內的塑封材料與凹槽能夠實現物理上的卡位元結構,提升塑封材料與凹槽側壁的結合力,能夠提升塑封後器件的可靠性。 In order to solve the above problems, the technical solution of the present invention provides a lead frame structure. The lead frame structure has grooves extending from the first surface to the second surface between adjacent lead parts and between the lead parts and the chip loading area. The groove has a narrowest part and a widest part distributed in a direction perpendicular to the surface of the substrate, and the distance between the narrowest part and the first surface of the substrate is smaller than the distance between the widest part and the first surface of the substrate. spacing. Therefore, the size of the groove in the direction perpendicular to the surface of the lead frame changes irregularly, so that the molding material and the groove filled into the groove during subsequent molding can achieve a physical blocking structure, improving the The bonding force between the plastic packaging material and the groove sidewall can improve the reliability of the device after plastic packaging.

為使本發明的上述目的、特徵和有益效果能夠更為明顯易懂,下面結合圖式對本發明的具體實施例做詳細的說明。 In order to make the above objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention will be described in detail below in conjunction with the drawings.

圖3至圖5是本發明一實施例中引線框結構的示意圖。 3 to 5 are schematic diagrams of a lead frame structure in an embodiment of the present invention.

請參考圖3至圖5,圖3是圖4和圖5的俯視圖,圖4是圖3沿剖面線AA1方向的結構示意圖,圖5是圖3沿剖面線BB1方向的結構示意圖,所述引線框結構,包括: Please refer to Figures 3 to 5. Figure 3 is a top view of Figures 4 and 5. Figure 4 is a schematic structural view of Figure 3 along the section line AA1. Figure 5 is a schematic structural view of Figure 3 along the section line BB1. The leads Box structure, including:

基板200,所述基板200包括相對的第一面201和第二面202,所述基板200包括: The substrate 200 includes an opposite first side 201 and a second side 202. The substrate 200 includes:

若干晶片裝載區I; several wafer loading areas I;

位於各晶片裝載區I周圍的引線區,所述引線區包括若干凸起的引線部204,相鄰引線部204之間、以及引線部204和晶片裝載區I之間具有自第一面201向第二面202延伸的凹槽205,所述凹槽205具有沿垂直於基板200表 面方向上分佈的最窄部和最寬部,所述最窄部與基板200第一面201表面之間的間距小於所述最寬部與基板200第一面201表面之間的間距。 A lead area located around each wafer loading area I. The lead area includes a plurality of protruding lead portions 204. Between adjacent lead portions 204, and between the lead portions 204 and the wafer loading area I, there is a line extending from the first surface 201 to the wafer loading area I. A groove 205 extends from the second surface 202 . The groove 205 has a surface along a direction perpendicular to the surface of the substrate 200 . The narrowest part and the widest part are distributed in the surface direction, and the distance between the narrowest part and the first surface 201 of the substrate 200 is smaller than the distance between the widest part and the first surface 201 of the substrate 200 .

所述引線框結構相鄰引線部204之間、以及引線部204和晶片裝載區I之間具有自第一面201向第二面202延伸的凹槽205,所述凹槽205具有沿垂直於基板200表面方向上分佈的最窄部和最寬部,所述最窄部與基板200第一面201表面之間的間距小於所述最寬部與基板200第一面201表面之間的間距。從而所述凹槽205沿垂直於引線框表面的方向上的尺寸是不規則變化的,使得後續在塑封時填入到凹槽205內的塑封材料與凹槽205能夠實現物理上的卡位元結構,提升塑封材料與凹槽205側壁的結合力,能夠提升塑封後器件的可靠性。 The lead frame structure has a groove 205 extending from the first surface 201 to the second surface 202 between adjacent lead portions 204 and between the lead portion 204 and the wafer loading area 1. The groove 205 has an edge perpendicular to The narrowest part and the widest part distributed in the surface direction of the substrate 200. The distance between the narrowest part and the first surface 201 of the substrate 200 is smaller than the distance between the widest part and the first surface 201 of the substrate 200. . Therefore, the size of the groove 205 in the direction perpendicular to the surface of the lead frame changes irregularly, so that the molding material filled into the groove 205 and the groove 205 during subsequent molding can achieve physical blocking. The structure improves the bonding force between the plastic packaging material and the side wall of the groove 205, which can improve the reliability of the device after plastic packaging.

在本實施例中,所述基板200的材料包括金屬,所述金屬包括銅、銅合金或鎳含量為42%的鐵鎳合金(42合金)。 In this embodiment, the material of the substrate 200 includes metal, and the metal includes copper, copper alloy, or iron-nickel alloy (42 alloy) with a nickel content of 42%.

在本實施例中,相鄰引線部204的中心點在第一方向X或第二方向Y之間的尺寸範圍為大於等於0.4毫米。 In this embodiment, the size range of the center points of adjacent lead portions 204 between the first direction X or the second direction Y is greater than or equal to 0.4 mm.

在其他實施例中,所述基板還包括若干自基板第一面向第二面貫穿的通孔,所述通孔位於部分所述引線區之間,或者所述通孔位於部分晶片裝載區和引線區之間。 In other embodiments, the substrate further includes a plurality of through holes penetrating from the first surface to the second surface of the substrate, and the through holes are located between part of the lead areas, or the through holes are located between part of the wafer loading area and the lead areas. between districts.

請繼續參考圖3至圖5,在本實施例中,所述晶片裝載區I在基板200表面的投影圖形為矩形。 Please continue to refer to FIGS. 3 to 5 . In this embodiment, the projection pattern of the wafer loading area I on the surface of the substrate 200 is a rectangle.

在本實施例中,所述引線區包括若干圈子區域II,若干圈所述子區域II環繞所述晶片裝載區I同心分佈,任一圈子區域II內具有若干相互分立的引線部204。 In this embodiment, the lead area includes several circle areas II, and several circles of the sub-areas II are concentrically distributed around the wafer loading area I. There are several mutually separated lead parts 204 in any circle area II.

在本實施例中,相鄰兩圈子區域II內的引線部204的中軸線不重合。以便後續在引線部204和晶片裝載區I之間實現多層引線。 In this embodiment, the central axes of the lead portions 204 in two adjacent circle areas II do not overlap. In order to subsequently implement multi-layer wiring between the wiring portion 204 and the wafer loading area 1.

請繼續參考圖3至圖5,在本實施例中,所述凹槽205包括第 一分部206和位於第一分部206底部的第二分部207,所述第二分部207的頂部與第一分部206的底部相連通,所述第二分部207的側壁表面為凹陷表面。 Please continue to refer to Figures 3 to 5. In this embodiment, the groove 205 includes a third A subsection 206 and a second subsection 207 located at the bottom of the first subsection 206. The top of the second subsection 207 is connected with the bottom of the first subsection 206. The side wall surface of the second subsection 207 is Concave surface.

所述最窄部為第一分部206的底部和第二分部207的頂部,所述第一分部206在平行於引線框表面的第一方向X和第二方向Y上的頂部具有第一尺寸d1,所述最窄部在第一方向X和第二方向Y上具有第二尺寸d2,所述最寬部在第一方向X和第二方向Y上的最大尺寸為第三尺寸d3,所述第一尺寸d1大於第二尺寸d2,所述第二尺寸d2小於第三尺寸d3,所述第一方向X和第二方向Y相互垂直。 The narrowest part is the bottom of the first subsection 206 and the top of the second subsection 207. The top of the first subsection 206 in the first direction X and the second direction Y parallel to the surface of the lead frame has a A dimension d1, the narrowest part has a second dimension d2 in the first direction X and the second direction Y, and the maximum dimension of the widest part in the first direction X and the second direction Y is a third dimension d3 , the first dimension d1 is larger than the second dimension d2, the second dimension d2 is smaller than the third dimension d3, and the first direction X and the second direction Y are perpendicular to each other.

從而所述凹槽205沿垂直於引線框表面的方向上的尺寸是不規則變化的,所述第一尺寸d1大於第二尺寸d2,所述第二尺寸d2小於第三尺寸d3。使得後續在塑封時填入到凹槽205內的塑封材料與凹槽205的最窄部能夠實現物理上的卡位元結構,提升塑封材料與凹槽205側壁的結合力,能夠提升塑封後器件的可靠性。 Therefore, the size of the groove 205 in the direction perpendicular to the surface of the lead frame changes irregularly, the first size d1 is larger than the second size d2, and the second size d2 is smaller than the third size d3. This enables the plastic sealing material filled into the groove 205 to be subsequently filled into the groove 205 and the narrowest part of the groove 205 to achieve a physical snap-in structure, thereby improving the bonding force between the molding material and the side wall of the groove 205 and improving the device after molding. reliability.

在本實施例中,所述第二分部207的底部表面為凹陷表面。 In this embodiment, the bottom surface of the second portion 207 is a concave surface.

在其他實施例中,所述第二分部的底部表面為平面。 In other embodiments, the bottom surface of the second portion is planar.

在本實施例中,所述凹槽205在垂直於引線框表面的方向上的截面為軸對稱圖形,所述第三尺寸d3單側大於第二尺寸d2的範圍為大於10微米。以保證後續填入到凹槽205內的塑封材料,位於第二分部207內的塑封材料與凹槽205的最窄部能夠實現物理上的卡位元結構,提升塑封材料與凹槽205側壁的結合力。 In this embodiment, the cross section of the groove 205 in the direction perpendicular to the surface of the lead frame is an axially symmetrical figure, and the range in which the third dimension d3 is greater than the second dimension d2 on one side is greater than 10 microns. In order to ensure that the plastic sealing material subsequently filled into the groove 205, the plastic sealing material located in the second part 207 and the narrowest part of the groove 205 can achieve a physical snap-in structure, thereby improving the plastic sealing material and the side wall of the groove 205. the binding force.

在本實施例中,所述凹槽205最窄部的尺寸範圍為大於等於0.1毫米;所述凹槽205的深度為所述基板厚度的50%~70%。 In this embodiment, the size range of the narrowest part of the groove 205 is greater than or equal to 0.1 mm; the depth of the groove 205 is 50% to 70% of the thickness of the substrate.

圖6是本發明另一實施例中引線框結構的示意圖。 FIG. 6 is a schematic diagram of a lead frame structure in another embodiment of the present invention.

請參考圖6,圖6為與圖4視角一致的結構示意圖,在本實施例中,所述凹槽205包括第一分部306和位於第一分部306底部的第二分部 307,所述第二分部307的頂部與第一分部306的底部相連通,所述第二分部307的側壁表面為凹陷表面。 Please refer to Figure 6, which is a schematic structural diagram consistent with the perspective of Figure 4. In this embodiment, the groove 205 includes a first sub-section 306 and a second sub-section located at the bottom of the first sub-section 306. 307. The top of the second subsection 307 is connected with the bottom of the first subsection 306, and the side wall surface of the second subsection 307 is a concave surface.

圖6所示的結構與圖4所示的結構區別在於,所述第二分部307的底部表面為平面。 The difference between the structure shown in Figure 6 and the structure shown in Figure 4 is that the bottom surface of the second portion 307 is flat.

圖7是本發明另一實施例中引線框結構的示意圖。 FIG. 7 is a schematic diagram of a lead frame structure in another embodiment of the present invention.

請參考圖7,圖7為與圖4視角一致的結構示意圖,在本實施例中,所述凹槽205包括第一分部406和位於第一分部406底部的第二分部407,所述第二分部407的頂部與第一分部406的底部相連通,所述第二分部407的側壁表面為凹陷表面。 Please refer to Figure 7, which is a schematic structural diagram consistent with the perspective of Figure 4. In this embodiment, the groove 205 includes a first subsection 406 and a second subsection 407 located at the bottom of the first subsection 406, so The top of the second subpart 407 is connected with the bottom of the first subpart 406, and the side wall surface of the second subpart 407 is a concave surface.

在本實施例中,所述凹槽205還包括:位於第二分部407底部的第三分部408,所述第三分部408的頂部與第二分部407的底部相連通,所述第三分部408的側壁表面為凹陷表面。 In this embodiment, the groove 205 further includes: a third subsection 408 located at the bottom of the second subsection 407. The top of the third subsection 408 is connected with the bottom of the second subsection 407. The sidewall surface of the third segment 408 is a concave surface.

所述最窄部為第一分部406的底部和第二分部407的頂部,所述第一分部406在平行於引線框表面的第一方向X和第二方向Y上的頂部具有第一尺寸d1,所述最窄部在第一方向X和第二方向Y上具有第二尺寸d2,所述最寬部在第一方向X和第二方向Y上的最大尺寸為第三尺寸d3,所述第一尺寸d1大於第二尺寸d2,所述第二尺寸d2小於第三尺寸d3。 The narrowest part is the bottom of the first subsection 406 and the top of the second subsection 407. The top of the first subsection 406 in the first direction X and the second direction Y parallel to the surface of the lead frame has a A dimension d1, the narrowest part has a second dimension d2 in the first direction X and the second direction Y, and the maximum dimension of the widest part in the first direction X and the second direction Y is a third dimension d3 , the first dimension d1 is larger than the second dimension d2, and the second dimension d2 is smaller than the third dimension d3.

所述第二分部407在第一方向X和第二方向Y上的底部和第三分部408在第一方向X和第二方向Y上的頂部具有第四尺寸d4,所述第三分部408在第一方向上的最大尺寸為最寬部的第三尺寸d3,所述第四尺寸d4小於第三尺寸d3,所述第四尺寸d4大於第二尺寸d2。 The bottom of the second sub-portion 407 in the first direction X and the second direction Y and the top of the third sub-portion 408 in the first direction X and the second direction Y have a fourth dimension d4. The maximum dimension of the portion 408 in the first direction is the third dimension d3 of the widest portion, the fourth dimension d4 is smaller than the third dimension d3, and the fourth dimension d4 is larger than the second dimension d2.

所述凹槽205沿垂直於引線框表面的方向上的尺寸是不規則變化的,所述第一尺寸d1大於第二尺寸d2,所述第二尺寸d2小於第三尺寸d3,所述第四尺寸d4小於第三尺寸d3,所述第四尺寸d4大於第二尺寸d2。使得後續在塑封時填入到凹槽205內的塑封材料與凹槽205的最窄部能夠實現物理上的卡位元結構,提升塑封材料與凹槽205側壁的結合力,能夠提升塑封 後器件的可靠性。 The size of the groove 205 in the direction perpendicular to the surface of the lead frame changes irregularly, the first size d1 is larger than the second size d2, the second size d2 is smaller than the third size d3, and the fourth size d3 is smaller than the third size d3. Dimension d4 is smaller than the third dimension d3, which is larger than the second dimension d2. This enables the plastic sealing material filled into the groove 205 and the narrowest part of the groove 205 to achieve a physical snap-in structure during subsequent sealing, thereby improving the bonding force between the plastic sealing material and the side wall of the groove 205 and improving the plastic sealing ability. the reliability of the final device.

在本實施例中,所述凹槽205在垂直於引線框表面的方向上的截面為軸對稱圖形,所述第三尺寸d3單側大於第四尺寸d4的範圍為大於10微米。 In this embodiment, the cross section of the groove 205 in the direction perpendicular to the surface of the lead frame is an axially symmetrical figure, and the range in which the third dimension d3 is larger than the fourth dimension d4 on one side is greater than 10 microns.

在本實施例中,所述凹槽205所述第三分部408的底部表面為凹陷表面。 In this embodiment, the bottom surface of the third portion 408 of the groove 205 is a concave surface.

在其他實施例中,所述第三分部的底部表面為平面。 In other embodiments, the bottom surface of the third portion is planar.

圖8是本發明另一實施例中引線框結構的示意圖。 FIG. 8 is a schematic diagram of a lead frame structure in another embodiment of the present invention.

請參考圖8,圖8為與圖7視角一致的結構示意圖,在本實施例中,所述凹槽205包括第一分部506和位於第一分部506底部的第二分部507,所述第二分部507的頂部與第一分部506的底部相連通,所述第二分部507的側壁表面為凹陷表面;所述凹槽205還包括位於第二分部507底部的第三分部508,所述第三分部508的頂部與第二分部507的底部相連通,所述第三分部508的側壁表面為凹陷表面。 Please refer to Figure 8. Figure 8 is a schematic structural diagram consistent with the perspective of Figure 7. In this embodiment, the groove 205 includes a first subsection 506 and a second subsection 507 located at the bottom of the first subsection 506. The top of the second part 507 is connected with the bottom of the first part 506, and the side wall surface of the second part 507 is a concave surface; the groove 205 also includes a third part located at the bottom of the second part 507. Part 508, the top of the third part 508 is connected with the bottom of the second part 507, and the side wall surface of the third part 508 is a concave surface.

圖8所示的結構與圖7所示的結構區別在於,所述第三分部508的底部表面為平面。 The difference between the structure shown in Figure 8 and the structure shown in Figure 7 is that the bottom surface of the third portion 508 is flat.

圖9是本發明另一實施例中引線框結構的示意圖。 FIG. 9 is a schematic diagram of a lead frame structure in another embodiment of the present invention.

請參考圖9,圖9為在圖4基礎上的結構示意圖,圖9的結構與圖4的結構區別在於,所述基板200還包括:若干自第二面202向第一面201延伸且與所述凹槽205相連通的開口620。 Please refer to Figure 9. Figure 9 is a schematic structural diagram based on Figure 4. The difference between the structure of Figure 9 and the structure of Figure 4 is that the substrate 200 also includes: a number of extending from the second surface 202 to the first surface 201 and connected with the first surface 201. The groove 205 communicates with the opening 620 .

所述開口620與凹槽205底部相連通,從而後續塑封材料還可以填充到開口620內,後續在引線部204和晶片裝載區I之間實現多層引線時,位於開口620內的塑封材料起到進一步的隔離作用,有利於實現多層引線。 The opening 620 is connected to the bottom of the groove 205, so that the subsequent molding material can be filled into the opening 620. When multi-layer leads are subsequently implemented between the lead portion 204 and the wafer loading area 1, the molding material located in the opening 620 plays a role. Further isolation is beneficial to achieve multi-layer leads.

圖10是本發明另一實施例中引線框結構的示意圖。 Figure 10 is a schematic diagram of a lead frame structure in another embodiment of the present invention.

請參考圖10,圖10為在圖7基礎上的結構示意圖,圖10的結構與圖7的結構區別在於,所述基板200還包括:若干自第二面202向第一面201延伸且與所述凹槽205相連通的開口720。 Please refer to Figure 10. Figure 10 is a schematic structural diagram based on Figure 7. The difference between the structure of Figure 10 and the structure of Figure 7 is that the substrate 200 also includes: a number of extending from the second surface 202 to the first surface 201 and connected with the first surface 201. The groove 205 communicates with the opening 720 .

所述開口720與凹槽205底部相連通,從而後續塑封材料還可以填充到開口720內,後續在引線部204和晶片裝載區I之間實現多層引線時,位於開口720內的塑封材料起到進一步的隔離作用,有利於實現多層引線。 The opening 720 is connected to the bottom of the groove 205, so that the subsequent molding material can be filled into the opening 720. When multi-layer leads are subsequently implemented between the lead portion 204 and the wafer loading area 1, the molding material located in the opening 720 plays a role. Further isolation is beneficial to achieve multi-layer leads.

雖然本發明披露如上,但本發明並非限定於此。任何本領域技術人員,在不脫離本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以請求項所限定的範圍為準。 Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

200:基板 200:Substrate

201:第一面 201: First side

202:第二面 202:Second side

204:引線部 204: Lead part

205:凹槽 205: Groove

206:第一分部 206:First Division

207:第二分部 207:Second Division

d1:第一尺寸 d1: first size

d2:第二尺寸 d2: second size

d3:第三尺寸 d3: third dimension

Y:第二方向 Y: second direction

Claims (11)

一種引線框結構,其特徵在於,包括:基板,所述基板包括相對的第一面和第二面,所述基板包括:若干晶片裝載區;位於各晶片裝載區周圍的引線區,所述引線區包括若干凸起的引線部,相鄰引線部之間、以及引線部和晶片裝載區之間具有自第一面向第二面延伸的凹槽,所述凹槽具有沿垂直於基板表面方向上分佈的最窄部和最寬部,所述最窄部與基板第一面表面之間的間距小於所述最寬部與基板第一面表面之間的間距,所述凹槽包括第一分部、位於所述第一分部底部的第二分部和位於所述第二分部底部的第三分部,所述第二分部的頂部與所述第一分部的底部相連通,所述第三分部的頂部與所述第二分部的底部相連通,所述第二分部的側壁表面為凹陷表面,所述第三分部的側壁表面為凹陷表面,所述第一分部在平行於引線框表面的第一方向和第二方向上的頂部具有第一尺寸,所述最窄部為所述第一分部的底部和所述第二分部的頂部,所述最窄部在第一方向上和第二方向上具有第二尺寸,所述第三分部在第一方向上的最大尺寸為最寬部的第三尺寸,所述第二分部在第一方向和第二方向上的底部和所述第三分部在第一方向和第二方向上的頂部具有第四尺寸,所述第一方向和所述第二方向垂直,所述第一尺寸大於第二尺寸,所述第二尺寸小於第三尺寸,所述第四尺寸小於第三尺寸,所述第四尺寸大於第二尺寸,所述第三分部的底部表面為凹陷表面,或者所述第三分部的底部表面為平面。 A lead frame structure, characterized in that it includes: a base plate, the base plate includes an opposite first surface and a second surface, the base plate includes: a plurality of wafer loading areas; a lead area located around each wafer loading area, the lead The area includes a plurality of protruding lead parts, and between adjacent lead parts and between the lead parts and the wafer loading area, there is a groove extending from the first surface to the second surface, the groove having a direction perpendicular to the substrate surface. The narrowest part and the widest part of the distribution, the distance between the narrowest part and the first surface of the substrate is smaller than the distance between the widest part and the first surface of the substrate, the groove includes a first part part, a second part located at the bottom of the first part and a third part located at the bottom of the second part, and the top of the second part is connected to the bottom of the first part, The top of the third division is connected with the bottom of the second division, the side wall surface of the second division is a concave surface, the side wall surface of the third division is a concave surface, and the first The top of the portion has a first size in the first direction and the second direction parallel to the surface of the lead frame, the narrowest portion is the bottom of the first portion and the top of the second portion, and the The narrowest part has a second dimension in the first direction and the second direction, the maximum dimension of the third sub-part in the first direction is the third dimension of the widest part, and the second sub-part is in the first direction. The bottom in the first direction and the second direction and the top of the third portion in the first direction and the second direction have a fourth dimension, the first direction and the second direction are perpendicular, and the first dimension is greater than a second size, the second size is smaller than the third size, the fourth size is smaller than the third size, the fourth size is larger than the second size, the bottom surface of the third segment is a concave surface, or the The bottom surface of the third segment is flat. 如請求項1所述的引線框結構,其中,所述凹槽在垂直於引線框表面的方向上的截面為軸對稱圖形,所述第三尺寸單側大於第二尺寸的範圍為大於10微米。 The lead frame structure according to claim 1, wherein the cross-section of the groove in the direction perpendicular to the surface of the lead frame is an axially symmetrical figure, and the range in which the third dimension is larger than the second dimension on one side is greater than 10 microns. . 如請求項1所述的引線框結構,其中,所述凹槽在垂直於引線框表面的方向上的截面為軸對稱圖形,所述第三尺寸單側大於第四尺寸的 範圍為大於10微米。 The lead frame structure according to claim 1, wherein the cross section of the groove in the direction perpendicular to the surface of the lead frame is an axially symmetrical figure, and the third dimension is larger than the fourth dimension on one side. The range is greater than 10 microns. 如請求項1所述的引線框結構,其中,所述晶片裝載區在基板表面的投影圖形為矩形。 The lead frame structure according to claim 1, wherein the projection pattern of the wafer loading area on the surface of the substrate is a rectangle. 如請求項4所述的引線框結構,其中,所述引線區包括若干圈子區域,若干圈所述子區域環繞所述晶片裝載區同心分佈,任一圈子區域內具有若干相互分立的引線部。 The lead frame structure according to claim 4, wherein the lead area includes a plurality of circle areas, a plurality of circles of the sub-areas are concentrically distributed around the wafer loading area, and any circle area has a number of mutually independent lead parts. 如請求項5所述的引線框結構,其中,相鄰兩圈引線部的中軸線不重合。 The lead frame structure as claimed in claim 5, wherein the central axes of two adjacent turns of the lead portion do not overlap. 如請求項1所述的引線框結構,其中,所述基板還包括若干自基板第一面向第二面貫穿的通孔,所述通孔位於部分所述引線區之間,或者所述通孔位於部分晶片裝載區和引線區之間。 The lead frame structure according to claim 1, wherein the substrate further includes a plurality of through holes penetrating from the first surface to the second surface of the substrate, and the through holes are located between some of the lead regions, or the through holes Located between part of the wafer loading area and the lead area. 如請求項1所述的引線框結構,其中,所述基板還包括:若干自第二面向第一面延伸且與所述凹槽相連通的開口。 The lead frame structure according to claim 1, wherein the substrate further includes: a plurality of openings extending from the second surface to the first surface and connected with the groove. 如請求項1所述的引線框結構,其中,所述基板的材料包括金屬,所述金屬包括銅、銅合金或鎳含量為42%的鐵鎳合金。 The lead frame structure according to claim 1, wherein the material of the substrate includes metal, and the metal includes copper, copper alloy or iron-nickel alloy with a nickel content of 42%. 如請求項1所述的引線框結構,其中,相鄰引線部的中心點在第一方向或第二方向之間的尺寸範圍為大於等於0.4毫米。 The lead frame structure according to claim 1, wherein the size range between the center points of adjacent lead portions in the first direction or the second direction is greater than or equal to 0.4 mm. 如請求項1所述的引線框結構,其中,所述凹槽最窄部的尺寸範圍為大於等於0.1毫米;所述凹槽的深度為所述基板厚度的50%~70%。 The lead frame structure according to claim 1, wherein the size range of the narrowest part of the groove is greater than or equal to 0.1 mm; the depth of the groove is 50% to 70% of the thickness of the substrate.
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