TWI833908B - 包含無機氧化物組分及經炔氧基取代之旋塗碳組分且可用作具有改良儲存壽命之硬遮罩及填充材料的旋塗組合物 - Google Patents
包含無機氧化物組分及經炔氧基取代之旋塗碳組分且可用作具有改良儲存壽命之硬遮罩及填充材料的旋塗組合物 Download PDFInfo
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
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- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
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- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/02—Condensation polymers of aldehydes or ketones with phenols only of ketones
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G8/30—Chemically modified polycondensates by unsaturated compounds, e.g. terpenes
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- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K5/0091—Complexes with metal-heteroatom-bonds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
- C08K5/053—Polyhydroxylic alcohols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
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- C08K5/17—Amines; Quaternary ammonium compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/16—Condensation polymers of aldehydes or ketones with phenols only of ketones with phenols
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
- C09D171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2518/00—Other type of polymers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
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- C08G2261/3242—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more oxygen atoms as the only heteroatom, e.g. benzofuran
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- Polymers & Plastics (AREA)
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- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962809072P | 2019-02-22 | 2019-02-22 | |
| US62/809,072 | 2019-02-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202041619A TW202041619A (zh) | 2020-11-16 |
| TWI833908B true TWI833908B (zh) | 2024-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109105433A TWI833908B (zh) | 2019-02-22 | 2020-02-20 | 包含無機氧化物組分及經炔氧基取代之旋塗碳組分且可用作具有改良儲存壽命之硬遮罩及填充材料的旋塗組合物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11767398B2 (https=) |
| EP (1) | EP3928348B1 (https=) |
| JP (1) | JP7610518B2 (https=) |
| KR (1) | KR102843498B1 (https=) |
| CN (1) | CN113412533A (https=) |
| SG (1) | SG11202106923XA (https=) |
| TW (1) | TWI833908B (https=) |
| WO (1) | WO2020169702A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102907251B1 (ko) * | 2022-05-03 | 2026-01-02 | (주)휴넷플러스 | 유기중합체, 이를 포함하는 반도체 하드마스크 조성물 및 이를 이용한 패턴화 방법 |
| JP7805883B2 (ja) | 2022-07-08 | 2026-01-26 | 信越化学工業株式会社 | 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法 |
| IL305619A (en) | 2022-09-14 | 2024-04-01 | Shinetsu Chemical Co | Compound for forming a metal-containing layer, composition for forming a metal-containing layer, printing method, and semiconductor masking sensitizer |
| JP2024068637A (ja) * | 2022-11-08 | 2024-05-20 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| JP2024089633A (ja) | 2022-12-21 | 2024-07-03 | 信越化学工業株式会社 | 金属含有膜形成用重合体、金属含有膜形成用組成物、及びパターン形成方法 |
| JP2024091495A (ja) * | 2022-12-22 | 2024-07-04 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| JP2024097388A (ja) * | 2023-01-06 | 2024-07-19 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| JP7802711B2 (ja) * | 2023-01-06 | 2026-01-20 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| KR102795114B1 (ko) * | 2023-02-14 | 2025-04-10 | 삼성에스디아이 주식회사 | 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법 |
| JP7802029B2 (ja) | 2023-02-15 | 2026-01-19 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法 |
| JP2024122656A (ja) * | 2023-02-28 | 2024-09-09 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| EP4435516A1 (en) * | 2023-03-16 | 2024-09-25 | Shin-Etsu Chemical Co., Ltd. | Method for forming resist underlayer film and patterning process |
| JP7839127B2 (ja) * | 2023-06-07 | 2026-04-01 | 信越化学工業株式会社 | 金属含有膜形成用組成物及びパターン形成方法 |
| JP2025032887A (ja) | 2023-08-28 | 2025-03-12 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| JP2025032875A (ja) | 2023-08-28 | 2025-03-12 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| JP2025099570A (ja) | 2023-12-22 | 2025-07-03 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法 |
| JP2025099887A (ja) | 2023-12-22 | 2025-07-03 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法 |
| JP2025101957A (ja) * | 2023-12-26 | 2025-07-08 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法 |
| JP2025102051A (ja) * | 2023-12-26 | 2025-07-08 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012145330A1 (en) * | 2011-04-18 | 2012-10-26 | The University Of British Columbia | Fluorene-9-bisphenol compounds and methods for their use |
| US20130336962A1 (en) * | 2012-04-16 | 2013-12-19 | The University of Biritish Columbia | Aziridine bisphenol ethers and related compounds and methods for their use |
| TW201639927A (zh) * | 2015-02-11 | 2016-11-16 | Az電子材料(盧森堡)股份有限公司 | 金屬硬遮罩組合物及在半導體基板上形成精細圖案之方法 |
| TW201710795A (zh) * | 2015-07-13 | 2017-03-16 | 信越化學工業股份有限公司 | 光阻下層膜形成用組成物及使用此組成物之圖案形成方法 |
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| JP6625934B2 (ja) * | 2015-07-14 | 2019-12-25 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及び化合物 |
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| WO2012145330A1 (en) * | 2011-04-18 | 2012-10-26 | The University Of British Columbia | Fluorene-9-bisphenol compounds and methods for their use |
| US20130336962A1 (en) * | 2012-04-16 | 2013-12-19 | The University of Biritish Columbia | Aziridine bisphenol ethers and related compounds and methods for their use |
| TW201639927A (zh) * | 2015-02-11 | 2016-11-16 | Az電子材料(盧森堡)股份有限公司 | 金屬硬遮罩組合物及在半導體基板上形成精細圖案之方法 |
| TW201710795A (zh) * | 2015-07-13 | 2017-03-16 | 信越化學工業股份有限公司 | 光阻下層膜形成用組成物及使用此組成物之圖案形成方法 |
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| SG11202106923XA (en) | 2021-07-29 |
| JP2022521531A (ja) | 2022-04-08 |
| US11767398B2 (en) | 2023-09-26 |
| US20220025109A1 (en) | 2022-01-27 |
| JP7610518B2 (ja) | 2025-01-08 |
| EP3928348B1 (en) | 2025-10-29 |
| CN113412533A (zh) | 2021-09-17 |
| WO2020169702A1 (en) | 2020-08-27 |
| EP3928348A1 (en) | 2021-12-29 |
| KR20210127712A (ko) | 2021-10-22 |
| KR102843498B1 (ko) | 2025-08-06 |
| TW202041619A (zh) | 2020-11-16 |
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