TWI833127B - Palladium etching solution - Google Patents
Palladium etching solution Download PDFInfo
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- TWI833127B TWI833127B TW110142008A TW110142008A TWI833127B TW I833127 B TWI833127 B TW I833127B TW 110142008 A TW110142008 A TW 110142008A TW 110142008 A TW110142008 A TW 110142008A TW I833127 B TWI833127 B TW I833127B
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- palladium metal
- etching solution
- metal etching
- inorganic acid
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 146
- 238000005530 etching Methods 0.000 title claims abstract description 130
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 73
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 26
- -1 inorganic acid salt Chemical class 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims description 91
- 239000002184 metal Substances 0.000 claims description 91
- 239000007788 liquid Substances 0.000 claims description 36
- 239000002738 chelating agent Substances 0.000 claims description 15
- 231100000614 poison Toxicity 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 239000002574 poison Substances 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 8
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- MNCFZWFXTUZLEI-UHFFFAOYSA-N CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NC(N)COCCO Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NC(N)COCCO MNCFZWFXTUZLEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910002651 NO3 Inorganic materials 0.000 claims description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- JGUQDUKBUKFFRO-GGWOSOGESA-N (NE)-N-[(3E)-3-hydroxyiminobutan-2-ylidene]hydroxylamine Chemical compound O\N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-GGWOSOGESA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- FSEUPUDHEBLWJY-UHFFFAOYSA-N diacetylmonoxime Chemical compound CC(=O)C(C)=NO FSEUPUDHEBLWJY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000003440 toxic substance Substances 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- UBPGILLNMDGSDS-UHFFFAOYSA-N diethylene glycol diacetate Chemical compound CC(=O)OCCOCCOC(C)=O UBPGILLNMDGSDS-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Abstract
Description
本發明是有關於一種蝕刻液，且特別是有關於一種鈀金屬蝕刻液。 The present invention relates to an etching liquid, and in particular to a palladium metal etching liquid.
一般而言，在線路製程中需要對基板上的金屬線路及金屬活化層等金屬膜層(例如是鈀金屬)進行蝕刻，以達到所需的佈線圖案，而在蝕刻過程中為了要達到所需的蝕刻效果常會選用不環保的蝕刻液。然而，在現今越來越注重環保潮流下，前述蝕刻液已經漸漸不被青睞，因此本領域技術人員也亟欲找尋可以替代的方案，力求可以在達到所需的蝕刻效果的同時兼具環保的訴求。 Generally speaking, in the circuit manufacturing process, it is necessary to etch the metal circuits and metal active layers and other metal film layers (such as palladium metal) on the substrate to achieve the required wiring pattern. During the etching process, in order to achieve the required To improve the etching effect, non-environmentally friendly etching fluids are often used. However, in today's trend of increasing emphasis on environmental protection, the aforementioned etching solutions have gradually fallen out of favor. Therefore, those skilled in the art are eager to find alternative solutions, striving to achieve the required etching effect while being environmentally friendly. demands.
本發明提供一種鈀金屬蝕刻液，其可以在達到一定的蝕刻效果的同時兼具環保的訴求。 The present invention provides a palladium metal etching liquid, which can achieve a certain etching effect while meeting environmental requirements.
本發明的一種鈀金屬蝕刻液，包括無機酸以及無機酸鹽。無機酸占蝕刻液的重量百分比至少大於3%。無機酸鹽占蝕刻液的重量百分比至少大於1%。 A palladium metal etching liquid of the present invention includes inorganic acid and inorganic acid salt. The weight percentage of inorganic acid in the etching solution is at least greater than 3%. The weight percentage of the inorganic acid salt in the etching solution is at least greater than 1%.
在本發明的一實施例中，上述的無機酸包括硫酸、鹽酸、硝酸、磷酸或其組合。 In one embodiment of the present invention, the above-mentioned inorganic acid includes sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid or combinations thereof.
在本發明的一實施例中，上述的無機酸鹽包括硫酸鹽、磷酸鹽、硝酸鹽或其組合。 In one embodiment of the present invention, the above-mentioned inorganic acid salt includes sulfate, phosphate, nitrate or a combination thereof.
在本發明的一實施例中，上述的鈀金屬蝕刻液更包括螯合劑。螯合劑占蝕刻液的重量百分比至少大於1%。 In an embodiment of the present invention, the above-mentioned palladium metal etching solution further includes a chelating agent. The weight percentage of the chelating agent in the etching solution is at least greater than 1%.
在本發明的一實施例中，上述的螯合劑包括乙二醇雙氨乙基醚四乙酸(EGTA)、乙二胺四乙酸(EDTA)、檸檬酸、丁二酮肟、二乙二醇二甲醚、甲基磺酸錫或其組合。 In one embodiment of the present invention, the above-mentioned chelating agent includes ethylene glycol bisaminoethyl ether tetraacetic acid (EGTA), ethylenediamine tetraacetic acid (EDTA), citric acid, butanedione oxime, diethylene glycol diacetate Methyl ether, tin methane sulfonate or combinations thereof.
在本發明的一實施例中，上述的無機酸占蝕刻液的重量百分比小於50%。 In an embodiment of the present invention, the weight percentage of the above-mentioned inorganic acid in the etching solution is less than 50%.
在本發明的一實施例中，上述的無機酸鹽占蝕刻液的重量百分比小於50%。 In an embodiment of the present invention, the weight percentage of the above-mentioned inorganic acid salt in the etching solution is less than 50%.
在本發明的一實施例中，上述的螯合劑占蝕刻液的重量百分比小於20%。 In an embodiment of the present invention, the weight percentage of the above-mentioned chelating agent in the etching solution is less than 20%.
在本發明的一實施例中，上述的蝕刻液不包括毒化物。 In an embodiment of the present invention, the above-mentioned etching solution does not include poisons.
在本發明的一實施例中，上述的毒化物包括氰化物或硫脲。 In an embodiment of the present invention, the poison includes cyanide or thiourea.
基於上述，本發明藉由對鈀金屬蝕刻液的組成物進行選擇，選擇可以具有所需蝕刻成效亦對環境較無不良影響的無機酸以及無機酸鹽，因此在線路製程中使用本發明的鈀金屬蝕刻液可以在達到一定的蝕刻效果的同時兼具環保的訴求。 Based on the above, the present invention selects the composition of the palladium metal etching solution to select inorganic acids and inorganic acid salts that can have the required etching effect and have less adverse effects on the environment. Therefore, the palladium of the present invention is used in the circuit manufacturing process. Metal etching liquid can achieve a certain etching effect while maintaining environmental protection.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, examples are given below and are described in detail below.
110:基材 110:Substrate
120:第一金屬層 120: First metal layer
122:圖案化第一金屬層 122: Patterning the first metal layer
130:第二金屬層 130: Second metal layer
132:圖案化第二金屬層 132: Patterning the second metal layer
140:圖案化導電層 140:Patterned conductive layer
圖1是進行蝕刻測試的灰階照片。 Figure 1 is a grayscale photo of the etching test.
圖2A至圖2C是本發明一實施例的鈀金屬蝕刻液應用到線路製程的部分剖面示意圖。 2A to 2C are partial cross-sectional schematic diagrams of a palladium metal etching solution applied to a circuit manufacturing process according to an embodiment of the present invention.
在下文中詳細闡述本發明的實施例。然而，該些實施例為示範性的，本發明並非僅限於此，且本發明由申請專利範圍的範圍界定。 Embodiments of the invention are explained in detail below. However, these embodiments are exemplary and the present invention is not limited thereto, and the present invention is defined by the scope of the patent application.
圖1是進行蝕刻測試的灰階照片。 Figure 1 is a grayscale photo of the etching test.
在本實施例中，蝕刻液適用於蝕刻鈀金屬。進一步而言，本實施例的鈀金屬蝕刻液包括無機酸以及無機酸鹽，其中無機酸占蝕刻液的重量百分比至少大於3%，且無機酸鹽占蝕刻液的重量百分比至少大於1%。據此，本實施例藉由對鈀金屬蝕刻液的組成物進行選擇，選擇可以具有所需蝕刻成效亦對環境較無不良影響的無機酸以及無機酸鹽，因此在線路製程中使用本發明的鈀金屬蝕刻液可以在達到一定的蝕刻效果的同時兼具環保的訴求。更進一步而言，本實施例的鈀金屬蝕刻液例如是不包括毒化物，其中 毒化物包括氰化物(如KCN)或硫脲或其他列管的一級至三級的毒化物，因此本實施例的鈀金屬蝕刻液為一種環保蝕刻藥劑，如此一來，可以降低製程中的環境污染與對操作者健康的危害，且在具有環保訴求的情況下，本實施例的鈀金屬蝕刻液還可以達到與上述含有毒化物的蝕刻液同等的蝕刻效果。此外，由於含有毒化物的蝕刻液的回收處理成本昂貴，因此，本實施例的鈀金屬蝕刻液也具有較佳的經濟效益，但本發明不限於此。 In this embodiment, the etching liquid is suitable for etching palladium metal. Furthermore, the palladium metal etching solution of this embodiment includes an inorganic acid and an inorganic acid salt, wherein the inorganic acid accounts for at least more than 3% by weight of the etching liquid, and the inorganic acid salt accounts for at least more than 1% by weight of the etching liquid. Accordingly, in this embodiment, by selecting the composition of the palladium metal etching solution, inorganic acids and inorganic acid salts that can have the required etching effect and have less adverse effects on the environment are selected. Therefore, the inventive method is used in the circuit manufacturing process. Palladium metal etching solution can achieve a certain etching effect while being environmentally friendly. Furthermore, the palladium metal etching solution of this embodiment does not include poisons, where Poisons include cyanide (such as KCN) or thiourea or other listed first- to third-level poisons. Therefore, the palladium metal etching solution in this embodiment is an environmentally friendly etching agent. In this way, the environment during the process can be reduced. Pollution and harm to the operator's health, and in the case of environmental protection requirements, the palladium metal etching solution of this embodiment can also achieve the same etching effect as the above-mentioned etching solution containing toxic substances. In addition, since the recovery and treatment cost of the etching liquid containing toxic substances is expensive, the palladium metal etching liquid in this embodiment also has better economic benefits, but the present invention is not limited thereto.
在一些實施例中，如圖1所示，經過蝕刻測試(一半未浸泡本實施例的鈀金屬蝕刻液，另一半浸泡本實施例的鈀金屬蝕刻液後，接著，整個在80℃下浸泡化鎳10分鐘)後，未浸泡本實施例的鈀金屬蝕刻液的預浸板(PP板)表面化鎳後具有灰黑色的鎳(圖1中的深色區域)，而浸泡本實施例的蝕刻液的PP板表面化鎳後不具有灰黑色的鎳(圖1中的非深色區域)，亦即使用本實施例的鈀金屬蝕刻液可以有效地去除PP板上的鈀金屬，換句話說，使用本實施例的鈀金屬蝕刻液後實質上無鈀金屬殘留在PP板上因此化鎳後不會有灰黑色的鎳沉積上去，因此可以說明本實施例的鈀金屬蝕刻液具有良好的蝕刻效果。在此，本實施例的蝕刻液是使用不包括氰化物的鈀金屬蝕刻液(無機酸：硫酸、鹽酸，無機酸鹽：硫酸銅)。此外，其他未說明的組成與規格應是本發明所屬領域的普通技術人員可以依據任何涵蓋包含在隨附申請專利範圍的精神及範圍內的內容所得。 In some embodiments, as shown in FIG. 1 , after etching test (half is not immersed in the palladium metal etching liquid of this embodiment, and the other half is immersed in the palladium metal etching liquid of this embodiment, and then the whole is immersed at 80° C. After 10 minutes), the surface of the prepreg board (PP board) that has not been immersed in the palladium metal etching solution of this embodiment has gray-black nickel (the dark area in Figure 1) after being immersed in the etching solution of this embodiment. The PP plate does not have gray-black nickel after nickel surface treatment (the non-dark area in Figure 1), that is, the palladium metal etching solution of this embodiment can be used to effectively remove the palladium metal on the PP plate. In other words, use After the palladium metal etching liquid of this embodiment is used, there is virtually no palladium metal remaining on the PP plate, so no gray-black nickel will be deposited on the PP plate after nickel removal. Therefore, it can be shown that the palladium metal etching liquid of this embodiment has a good etching effect. Here, the etching liquid of this embodiment uses a palladium metal etching liquid that does not contain cyanide (inorganic acid: sulfuric acid, hydrochloric acid, inorganic acid salt: copper sulfate). In addition, other unspecified compositions and specifications should be obtained by those of ordinary skill in the art to which the present invention belongs based on any content that is included in the spirit and scope of the appended patent application.
在一些實施例中，當使用習知技術的鈀金屬蝕刻液(如包 括KCN的蝕刻液)與本實施例的鈀金屬蝕刻液進行蝕刻壽命測試時，習知技術的鈀金屬蝕刻液失去蝕刻能力的時間小於本實施例的鈀金屬蝕刻液失去蝕刻能力的時間。此外，在相同蝕刻條件下，使用習知技術的鈀金屬蝕刻液將金屬去除完全的時間亦大於本實施例的鈀金屬蝕刻液將金屬去除完全的時間，亦即本實施例的鈀金屬蝕刻液在蝕刻壽命與蝕刻速率上相較於習知技術的鈀金屬蝕刻液皆呈現出較佳的蝕刻表現。 In some embodiments, when using conventional palladium metal etching solutions (such as When the etching liquid (including KCN) and the palladium metal etching liquid of this embodiment are subjected to an etching life test, the time for the palladium metal etching liquid of the conventional technology to lose its etching ability is shorter than the time for the palladium metal etching liquid of this embodiment to lose its etching ability. In addition, under the same etching conditions, the time it takes for the palladium metal etching liquid of the conventional technology to completely remove the metal is also longer than the time it takes for the palladium metal etching liquid of this embodiment to completely remove the metal, that is, the palladium metal etching liquid of this embodiment Compared with the conventional palladium metal etching solution in terms of etching life and etching rate, the etching solution exhibits better etching performance.
在一些實施例中，鈀金屬蝕刻液的蝕刻時間例如是介於10秒至10分鐘之間，舉例而言，鈀金屬蝕刻液的蝕刻時間例如是介於1分鐘至2分鐘之間，其中蝕刻條件為使用230公升的藥水蝕刻500片500毫米乘600毫米的基板上的金屬，且金屬佔基板的面積為70%，但本發明不限於此，鈀金屬蝕刻液的蝕刻時間會隨著對應蝕刻的金屬的蝕刻難易度與蝕刻條件而定。 In some embodiments, the etching time of the palladium metal etching liquid is, for example, between 10 seconds and 10 minutes. For example, the etching time of the palladium metal etching liquid is, for example, between 1 minute and 2 minutes, wherein the etching time is between 1 minute and 2 minutes. The conditions are to use 230 liters of liquid medicine to etch 500 pieces of metal on a 500 mm by 600 mm substrate, and the metal accounts for 70% of the substrate area. However, the invention is not limited to this. The etching time of the palladium metal etching solution will vary with the corresponding etching. The ease of etching of the metal depends on the etching conditions.
在一些實施例中，無機酸包括硫酸、鹽酸、硝酸、磷酸或其組合，換句話說，可以使用一種或一種以上的無機酸，亦即鈀金屬蝕刻液中可以使用單一酸或複合酸，其中複合酸例如是硫酸搭配鹽酸，或者，磷酸搭配硝酸，但本發明不限於此。 In some embodiments, the inorganic acid includes sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid or a combination thereof. In other words, one or more inorganic acids can be used, that is, a single acid or a composite acid can be used in the palladium metal etching solution, where The compound acid is, for example, sulfuric acid combined with hydrochloric acid, or phosphoric acid combined with nitric acid, but the invention is not limited thereto.
在一些實施例中，無機酸鹽包括硫酸鹽、磷酸鹽、硝酸鹽或其組合，換句話說，可以使用一種或一種以上的無機酸鹽，亦即鈀金屬蝕刻液中可以使用單一酸鹽或複合酸鹽，但本發明不限於此。 In some embodiments, the inorganic acid salt includes sulfate, phosphate, nitrate or a combination thereof. In other words, one or more inorganic acid salts can be used, that is, a single acid salt or a single acid salt can be used in the palladium metal etching solution. complex acid salt, but the present invention is not limited thereto.
在一些實施例中，鈀金屬蝕刻液更包括螯合劑，且螯合 劑占所述蝕刻液的重量百分比至少大於1%，舉例而言，螯合劑包括乙二醇雙氨乙基醚四乙酸(EGTA)、乙二胺四乙酸(EDTA)、檸檬酸、丁二酮肟、二乙二醇二甲醚、甲基磺酸錫或其組合，換句話說，可以使用一種或一種以上的螯合劑，但本發明不限於此。 In some embodiments, the palladium metal etching solution further includes a chelating agent, and the chelating agent The chelating agent accounts for at least more than 1% by weight of the etching solution. For example, the chelating agent includes ethylene glycol bisaminoethyl ether tetraacetic acid (EGTA), ethylenediamine tetraacetic acid (EDTA), citric acid, butanedione Oxime, diglyme, tin methanesulfonate or a combination thereof, in other words, one or more chelating agents can be used, but the invention is not limited thereto.
在一些實施例中，無機酸占鈀金屬蝕刻液的重量百分比小於50%，舉例而言，無機酸占鈀金屬蝕刻液的重量百分比可以是6%、10%、15%、20%、25%、30%、35%、40%、45%、45%或5%至50%內的任一數值，但本發明不限於此。 In some embodiments, the weight percentage of the inorganic acid in the palladium metal etching solution is less than 50%. For example, the weight percentage of the inorganic acid in the palladium metal etching solution can be 6%, 10%, 15%, 20%, or 25%. , 30%, 35%, 40%, 45%, 45% or any value within 5% to 50%, but the invention is not limited thereto.
在一些實施例中，無機酸鹽占鈀金屬蝕刻液的重量百分比小於50%，舉例而言，無機酸占鈀金屬蝕刻液的重量百分比可以是2%、5%、10%、15%、20%、25%、30%、35%、40%、45%、45%或1%至50%內的任一數值，但本發明不限於此。 In some embodiments, the weight percentage of the inorganic acid salt in the palladium metal etching solution is less than 50%. For example, the weight percentage of the inorganic acid in the palladium metal etching solution can be 2%, 5%, 10%, 15%, 20 %, 25%, 30%, 35%, 40%, 45%, 45% or any value within 1% to 50%, but the invention is not limited thereto.
在一些實施例中，螯合劑占鈀金屬蝕刻液的重量百分比小於20%，舉例而言，無機酸占鈀金屬蝕刻液的重量百分比可以是0%、2%、5%、10%、15%或1%至20%內的任一數值，但本發明不限於此。 In some embodiments, the weight percentage of the chelating agent in the palladium metal etching solution is less than 20%. For example, the weight percentage of the inorganic acid in the palladium metal etching solution can be 0%, 2%, 5%, 10%, or 15%. Or any value within 1% to 20%, but the present invention is not limited thereto.
在一些實施例中，相較於無機酸而言，無機酸鹽的濃度在本實施例的鈀金屬蝕刻液中對蝕刻效果具有較顯著地影響，亦即當以無機酸鹽的濃度為操作變因時，蝕刻效果會產生明顯變化，但本發明不限於此。 In some embodiments, compared with inorganic acids, the concentration of inorganic acid salts has a more significant impact on the etching effect in the palladium metal etching solution of this embodiment. That is, when the concentration of inorganic acid salts is used as the operating variable As a result, the etching effect will change significantly, but the present invention is not limited thereto.
在一些實施例中，鈀金屬蝕刻液可以以下述組合進行搭配，如表1所示。 In some embodiments, the palladium metal etching solution can be matched with the following combinations, as shown in Table 1.
應說明的是，本發明的鈀金屬蝕刻液可以藉由上述無機酸、無機酸鹽與螯合劑的具體實例及其均等物在適宜的比例下任意搭配組合，只要鈀金屬蝕刻液包括無機酸以及無機酸鹽，其中無機酸占鈀金屬蝕刻液的重量百分比至少大於3%。無機酸鹽占鈀金屬蝕刻液的重量百分比至少大於1%皆屬於本發明的保護範圍。 It should be noted that the palladium metal etching solution of the present invention can be arbitrarily combined with the above-mentioned specific examples of inorganic acids, inorganic acid salts and chelating agents and their equivalents in appropriate proportions, as long as the palladium metal etching solution includes inorganic acids and Inorganic acid salt, wherein the weight percentage of the inorganic acid in the palladium metal etching solution is at least greater than 3%. The weight percentage of the inorganic acid salt in the palladium metal etching solution is at least greater than 1%, and all belong to the protection scope of the present invention.
以下藉由圖式說明本發明的鈀金屬蝕刻液應用到線路製程的主要流程。圖2A至圖2C是本發明一實施例的鈀金屬蝕刻液應用到線路製程的部分剖面示意圖。 The following is a diagram illustrating the main process of applying the palladium metal etching solution of the present invention to the circuit manufacturing process. 2A to 2C are partial cross-sectional schematic diagrams of a palladium metal etching solution applied to a circuit manufacturing process according to an embodiment of the present invention.
請參考圖2A至圖2C，首先，提供表面上具有第一金屬層120、第二金屬層130與圖案化導電層140的基材110，如圖2A
所示，其中第一金屬層120可以是金屬活化層(催化鈀金屬層)，第二金屬層130可以是化銅層，而圖案化導電層140可以是電鍍銅線路層。接著，藉由本實施例的鈀金屬蝕刻液去蝕刻被圖案化導電層140所暴露出來的部分(非線路部分)，以得到圖案化第一金屬層122與圖案化第二金屬層132，如圖2B與圖2C所示，據此得到所需要的線路基板。在此，線路基板可以是PCB硬板、PCB軟板或其他適宜的線路基板類型，本發明不加以限制。
Please refer to FIGS. 2A to 2C . First, a
在一些實施例中，由於當線路製程為製作細線路時，例如是小於25微米(millimeter)時，若圖案化導電層140之間的金屬無法有效去除的話，則容易產生短路現象，因此，當線路製程為製作細線路時藉由本實施例的鈀金屬蝕刻液去蝕刻可以有效降低圖案化導電層140之間的短路現象的機率，但本發明不限於此。
In some embodiments, when the circuit process is to produce thin circuits, for example, less than 25 microns (millimeter), if the metal between the patterned
應說明的是，本發明不限制於應用在上述線路製程中，只要製程中會做到鈀金屬的蝕刻應用的皆屬於本發明的保護範圍。 It should be noted that the present invention is not limited to application in the above-mentioned circuit manufacturing process. As long as palladium metal is etched during the manufacturing process, it falls within the scope of the present invention.
綜上所述，本發明藉由對鈀金屬蝕刻液的組成物進行選擇，選擇可以具有所需蝕刻成效亦對環境較無不良影響的無機酸以及無機酸鹽，因此在線路製程中使用本發明的蝕刻液可以在達到一定的蝕刻效果的同時兼具環保的訴求。更進一步而言，本發明的鈀金屬蝕刻液例如是不包括毒化物，其中毒化物包括氰化物或硫脲或其他列管的一級至三級的毒化物，因此本實施例的蝕刻液為一種環保蝕刻藥劑，如此一來，可以降低製程中的環境污染 與對操作者健康的危害。 In summary, the present invention selects the composition of the palladium metal etching solution to select inorganic acids and inorganic acid salts that can achieve the required etching effect and have less adverse effects on the environment. Therefore, the present invention is used in the circuit manufacturing process. The etching solution can achieve a certain etching effect while being environmentally friendly. Furthermore, the palladium metal etching solution of the present invention does not include poisons, and the poisons include cyanide or thiourea or other primary to third-level poisons. Therefore, the etching solution of this embodiment is a Environmentally friendly etching reagents, which can reduce environmental pollution during the process and hazards to operator health.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
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| TW200510570A (en) * | 2003-08-22 | 2005-03-16 | Arch Spec Chem Inc | Novel aqueous based metal etchant |
| CN101245462A (en) * | 2007-02-13 | 2008-08-20 | 峻科技有限公司 | Etching liquid composition and etching method |
| CN102977889A (en) * | 2011-09-02 | 2013-03-20 | 东友精细化工有限公司 | Etching solution composition for metal oxide layer containing gallium |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200510570A (en) * | 2003-08-22 | 2005-03-16 | Arch Spec Chem Inc | Novel aqueous based metal etchant |
| CN101245462A (en) * | 2007-02-13 | 2008-08-20 | 峻科技有限公司 | Etching liquid composition and etching method |
| CN102977889A (en) * | 2011-09-02 | 2013-03-20 | 东友精细化工有限公司 | Etching solution composition for metal oxide layer containing gallium |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
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