CN114277373A - Long-life silver film etching solution composition and etching process - Google Patents
Long-life silver film etching solution composition and etching process Download PDFInfo
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- CN114277373A CN114277373A CN202111622391.7A CN202111622391A CN114277373A CN 114277373 A CN114277373 A CN 114277373A CN 202111622391 A CN202111622391 A CN 202111622391A CN 114277373 A CN114277373 A CN 114277373A
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- 229910052709 silver Inorganic materials 0.000 title claims abstract description 88
- 239000004332 silver Substances 0.000 title claims abstract description 88
- 238000005530 etching Methods 0.000 title claims abstract description 83
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 239000000203 mixture Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 12
- -1 silver ions Chemical class 0.000 claims abstract description 29
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims abstract description 25
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008139 complexing agent Substances 0.000 claims abstract description 17
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims abstract description 5
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- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 claims description 9
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 8
- 229920005862 polyol Polymers 0.000 claims description 7
- 150000003077 polyols Chemical class 0.000 claims description 7
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- 239000000600 sorbitol Substances 0.000 claims description 5
- 235000010356 sorbitol Nutrition 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 4
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 3
- 239000004386 Erythritol Substances 0.000 claims description 3
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 claims description 3
- 229930195725 Mannitol Natural products 0.000 claims description 3
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 claims description 3
- 235000019414 erythritol Nutrition 0.000 claims description 3
- 229940009714 erythritol Drugs 0.000 claims description 3
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 claims description 3
- 239000000594 mannitol Substances 0.000 claims description 3
- 235000010355 mannitol Nutrition 0.000 claims description 3
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 claims description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 2
- 229960001855 mannitol Drugs 0.000 claims description 2
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 2
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 claims description 2
- 229960002920 sorbitol Drugs 0.000 claims description 2
- LESFYQKBUCDEQP-UHFFFAOYSA-N tetraazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound N.N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LESFYQKBUCDEQP-UHFFFAOYSA-N 0.000 claims description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 2
- 239000000811 xylitol Substances 0.000 claims description 2
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 2
- 235000010447 xylitol Nutrition 0.000 claims description 2
- 229960002675 xylitol Drugs 0.000 claims description 2
- 150000008107 benzenesulfonic acids Chemical class 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 28
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- 230000002035 prolonged effect Effects 0.000 abstract description 3
- GPFIZJURHXINSQ-UHFFFAOYSA-N acetic acid;nitric acid Chemical compound CC(O)=O.O[N+]([O-])=O GPFIZJURHXINSQ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 description 15
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- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
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- 229920002120 photoresistant polymer Polymers 0.000 description 3
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- WQPMYSHJKXVTME-UHFFFAOYSA-N 3-hydroxypropane-1-sulfonic acid Chemical compound OCCCS(O)(=O)=O WQPMYSHJKXVTME-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
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- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a long-life silver film etching solution composition which mainly comprises nitric acid, acetic acid, acid A, a silver ion complexing agent and water, wherein the acid A is at least one selected from organic sulfonic acid and phosphoric acid, and the silver ion complexing agent is aminocarboxylic acid or hydroxycarboxylic acid; also comprises polyhydroxy compounds of C4-C10 except the silver ion complexing agent. The long-life silver film etching solution composition is based on the existing nitric acid-acetic acid mixed acid system, the polyhydroxy compound is self-assembled to form a film on the exposed aluminum surface in the substrate, the silver ion complex is fully complexed with free silver ions, the probability of the contact between the silver ions in the etching system and the aluminum surface is reduced, the service life of the etching solution is prolonged, and the production efficiency of a production line is improved. The invention also discloses an etching process of the long-life silver film etching solution composition.
Description
Technical Field
The invention relates to the technical field of electronic chemicals, in particular to a long-life silver film etching solution composition and an etching process.
Background
The etching solution for etching silver film in the prior art, as disclosed in CN105463463A, has the main components of nitric acid, phosphoric acid and acetic acid, and the application of the above etching solution in etching a substrate containing aluminum traces has the following technical defects: along with the continuous progress of the etching reaction, the concentration of silver ions in an etching solution system gradually rises, the silver ions and the cross section of the aluminum wiring are subjected to a displacement reaction, the surface of the cross section of the aluminum wiring is uneven due to the adsorption of silver particles, and a product of a subsequent metal coating is easy to contact with other conductive structure layers due to the coating, so that short circuit is caused; in order to avoid the replacement reaction, the silver ion concentration in the silver etching solution of the production line is required to be replaced in time when reaching 300ppm, the service life of the silver etching solution is short, and the production efficiency of the production line is low because the silver etching solution is frequently replaced.
Disclosure of Invention
One of the objectives of the present invention is to overcome the defects in the prior art, and to provide a long-life silver film etching solution composition, which effectively increases the content of silver ions in the silver film etching solution composition reaching the service life, prolongs the service life of the etching solution composition, and increases the production efficiency of a production line.
In order to achieve the purpose, the technical scheme of the invention is as follows: a long-life silver film etching solution composition mainly comprises nitric acid, acetic acid, A acid, a silver ion complexing agent and water, wherein the A acid is at least one selected from organic sulfonic acid and phosphoric acid, and the silver ion complexing agent is aminocarboxylic acid or hydroxycarboxylic acid; also comprises polyhydroxy compounds of C4-C10 except the silver ion complexing agent. The polyhydroxy compound is self-assembled to form a film on the section of the aluminum wire, the silver ion complexing agent and silver ions generated by etching are subjected to complexing reaction, and the two factors have synergistic effect, so that the concentration of the silver ions in an etching system is improved when the replacement condition is met, and the service life of the silver film etching solution composition is prolonged. The silver ion complexing agent is preferably aminocarboxylic acid and hydroxycarboxylic acid, both aminocarboxylic acid and hydroxycarboxylic acid are used as acids at the beginning of the etching reaction, and when the etching object is ITO/silver or ITO/silver/ITO, the method is favorable for improving the etching rate of the ITO layer.
The A acid is preferably an organic sulfonic acid. Phosphoric acid, which is a conventionally used silver etching acid component, has a technical effect of promoting the etching of the ITO layer, but phosphoric acid destroys the protective film formed on the aluminum surface by the polyhydroxy compound. The combination of organic sulfonic acid and a silver ion complexing agent is adopted to replace phosphoric acid, so that the promotion effect of an etching system on the displacement reaction of silver ions and aluminum wires is reduced.
The preferable technical scheme is that the mass percent of the silver ion complexing agent in the etching solution composition is 15-30%, and the mass percent of the C4-C10 polyhydroxy compound is 0.05-3%. Further, the mass percent of the C4-C10 polyhydroxy compounds is 0.1-1%. The consumption of the polyhydroxy compound is excessive, the protection effect is avoided, and the risk of precipitation exists in the use process, so that the additive residue is easily caused; when the amount of the polyhydroxy compound is too small, a continuous and complete protective film is not formed on the surface of the aluminum, and the local replacement reaction of the aluminum wiring section can also cause surface unevenness and further short circuit.
The preferable technical scheme is that the polyhydroxy compound is a C4-C8 compound, and the C4-C8 compound contains more than three hydroxyl groups.
Preferably, the silver ion complexing agent is at least one selected from citric acid, ethylenediaminetetraacetic acid, ammonium citrate and ammonium ethylenediaminetetraacetate. Further preferred are citric acid and ethylenediaminetetraacetic acid, and still further preferred is citric acid. The citric acid has three carboxyl groups which are complexed with silver ions, and the steric hindrance effect of the citric acid can further prevent the silver ions from generating a replacement reaction with aluminum. In addition, the citric acid belongs to strong organic acid, hydrogen ions generated by the primary ionization of the citric acid under the acidic condition are helpful for promoting the etching of the ITO layer, and the silver ion concentration gradually rises to a certain concentration along with the continuous progress of the etching reaction, and then the silver ion and acid radical ions generated by the ionization are subjected to a complexing reaction. The distributed ionization of the citric acid can continuously supplement hydrogen ions, carboxylate radicals capable of being complexed with silver ions are gradually released, and the two aspects are beneficial to prolonging the service life of the etching solution composition. In the etching solution system with the polyhydroxy compound, the silver ions with lower concentration are in a free state and do not have a displacement reaction, so citrate can be provided without adding citrate to serve as an initial silver ion chelating agent, namely the etching solution composition can not contain citrate.
The preferable technical scheme is that the coating mainly comprises the following components in percentage by mass: 5 to 15 percent of nitric acid, 10 to 20 percent of acetic acid, 15 to 29 percent of citric acid, 5 to 15 percent of organic sulfonic acid, 0.05 to 2 percent of polyhydroxy compound and 35 to 50 percent of water. Further, the silver film etching solution composition does not contain a sulfate ion source, including sulfuric acid or sulfate, and particularly, the sulfate ion is easy to react with silver ions to generate precipitates, so that the side surfaces of the silver layer generated by etching are blackened.
Preferably, the etching solution composition is used for etching a laminated film including a silver film and an ITO layer. Optionally, the laminated film is an ITO/silver laminated film structure, or an ITO/silver/ITO laminated film structure.
Preferably, the organic sulfonic acid is at least one selected from alkyl sulfonic acid, benzene sulfonic acid and naphthalene sulfonic acid. The organic sulfonic acid can be at least one of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, isethionic acid and hydroxypropyl sulfonic acid.
Preferably, the polyol is at least one selected from sorbitol, erythritol, xylitol and mannitol. Further, the polyol is sorbitol. Hydroxyl on the surface of aluminum in a water-based system and hydroxyl of the sugar alcohol polyhydroxy compound are adsorbed to form a bond, and an ordered and compact protective film is generated on the section of the aluminum wiring, wherein the self-assembled film of the sorbitol has the best protective performance on the aluminum, and the content of silver ions in the etching solution reaching the service life is higher than that of other sugar alcohols.
The preferable technical proposal is that the organic sulfonic acid is formed by combining at least one of methanesulfonic acid, ethanesulfonic acid and propanesulfonic acid and isethionic acid; the mass percentage of the hydroxyethyl sulfonic acid in the organic sulfonic acid is 32 to 40 percent based on the total mass of the organic sulfonic acid as 100 percent. Preferred organic sulfonic acids help to further reduce the loss of cord width.
The second purpose of the invention is to provide an etching process of the long-life silver film etching solution composition, wherein the temperature of the silver film etching solution composition in the etching process is 36-44 ℃. The temperature of the silver film etching solution composition is more preferably 38-42 ℃. The wet etching mode includes but is not limited to soaking, spraying and coating, and has the basic effect of prolonging the silver film etching solution composition, and further, the wet etching mode of the etching process is spraying. The preferred temperature conditions help to improve the stability of the polyol self-assembled film on the surface of the aluminum film.
The invention has the advantages and beneficial effects that:
the long-life silver film etching solution composition is based on the existing nitric acid-acetic acid mixed acid system, wherein a silver ion complex and a polyhydroxy compound simultaneously act on an etching substrate, the polyhydroxy compound is self-assembled to form a film on the exposed aluminum surface in the substrate, and the silver ion complex fully complexes silver ions generated by etching, so that the silver ions in the etching system are kept in a lower concentration level, the probability of replacement adsorption of the silver ions and aluminum is reduced, and the service life of the etching solution is prolonged;
the aluminum protective film can be effectively cleaned in the subsequent process without residue, the frequency of replacing liquid medicine and cleaning equipment on an etching production line is reduced, and the production efficiency of the production line is improved.
Drawings
FIG. 1 is a partial photomicrograph of a substrate after etching of a silver film according to example 2;
fig. 2 is a partial photomicrograph of the substrate after etching of the silver film of comparative example 2.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The silver film etching solution composition of the invention is used for forming a TFT array substrate, and can also be used for electronic components comprising a single-layer silver film or a laminated film of ITO and silver.
The main component of the silver film etching solution composition means a component having a content of not less than 3%.
1. Composition of silver film etching solution and service life thereof
The examples and comparative examples were prepared according to the components (unit: mass%) listed in the following table:
an ITO/silver/ITO laminated film (86A/1000A/86A) is formed on a substrate, photoresist is coated on the top ITO, and the photoresist is subjected to patterning treatment and then standby.
Silver powder was added to the silver film etching solution composition samples of the examples and comparative examples, the silver powder reacted with acid to generate silver ions, the total amount of free silver ions and silver ions in a complexed state in the etching solution was controlled to 1500ppm, and 5 groups of the same substrates were wet-etched by spraying using the silver ion-added samples (etching temperature 40 ℃, EPD 72s, OE% 100%, etching time 144 s). And after the etching is finished, washing the substrate by using deionized water, drying by using nitrogen, cleaning and removing the photoresist on the surface of the substrate by using stripping liquid, washing, and drying by using nitrogen. Cutting off the substrate, observing ITO residues on the surface of the substrate and silver adsorption on the cross section of the aluminum wire by using a scanning electron microscope, and determining CD-Loss; ITO residues and silver adsorption on aluminum surfaces were evaluated according to the following criteria:
1. to form a minor residue of the bottom layer ITO, the greater the residue, the more the residue is;
2. a indicates a slight adsorption of silver, more a more severe silver adsorption, the test results are shown in the following table:
| CD-Loss/μm | ITO residue | Silver adsorption on aluminum surface | |
| Example 1 | 0.86 | ★ | ▲▲▲ |
| Example 2 | 0.82 | ★★ | ▲ |
| Example 3 | 0.73 | ★★ | ▲ |
| Example 4 | 0.62 | ★★★ | ▲ |
| Example 5 | 0.75 | ★★ | ▲ |
| Example 6 | 0.88 | ★★ | ▲ |
| Example 7 | 0.82 | ★★ | ▲ |
| Comparative example 1 | 1.02 | ★ | ▲▲▲▲ |
| Comparative example 2 | 0.80 | ★★ | ▲▲▲ |
| Comparative example 3 | 0.81 | ★★ | ▲▲ |
As can be seen from the above table, the silver adsorption on the aluminum surface is significantly increased due to the inclusion of the protective film formed on the aluminum surface by the polyol in example 1, but the etching of ITO is accelerated by phosphoric acid, so the ITO residue is less, whereas the silver ion generation rate is greater than the citrate generation rate due to the chelating of silver ions by citric acid since the polyol is not included in comparative example 1, and the silver adsorption on the aluminum surface is severe; in example 4, EDTA is used as a silver ion complexing agent, and compared with citric acid, amino lone pair electrons in EDTA in the aluminum protective film are combined with hydrogen to affect the reaction between hydrogen ions and ITO, so that ITO residues are slightly more than that in example 2, and CD-Loss is smaller than that in example 2; example 5ITO residue and silver adsorption are similar to example 2, the organosulfonic acid consists of methanesulfonic acid and isethionic acid, CD-Loss is further reduced; example 6 the citric acid content is increased compared with example 2, and the CD-Loss is slightly increased; the compositions of examples 1-7 all have a longer service life (1500 ppm total of free silver ions and complexed silver ions), with examples 2-3 and 5-7 being more preferred. Silver adhesion was significantly reduced in example 2 compared to comparative example 2, as shown in figures 1 and 2, where the black dots are silver adsorption sites.
2. Service life of polyhydroxy compound and silver film etching solution composition
The examples were prepared according to the components (unit: mass%) listed in the following table:
the results of the tests of examples 10-12 are shown in the following table:
| CD-Loss/μm | ITO residue | Silver adsorption on aluminum surface | |
| Example 8 | 0.77 | ★★ | ▲▲ |
| Example 9 | 0.78 | ★★ | ▲ |
| Example 10 | 0.77 | ★★ | ▲ |
As can be seen from the above table, sorbitol, erythritol and mannitol can form a continuous and dense protective film on the aluminum surface, the silver adsorption amount of the aluminum trace cross section is slight, and the silver adsorption amounts of examples 2, 9 and 10 are arranged as follows: example 2 < example 10 < example 9; example 8 the silver adsorption was significantly greater than examples 9 and 10, but better than comparative example 2 with no polyol added.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The long-life silver film etching solution composition is characterized by mainly comprising nitric acid, acetic acid, acid A, a silver ion complexing agent and water, wherein the acid A is at least one selected from organic sulfonic acid and phosphoric acid, and the silver ion complexing agent is aminocarboxylic acid or hydroxycarboxylic acid; also comprises polyhydroxy compounds of C4-C10 except the silver ion complexing agent.
2. The long-life silver film etching solution composition as claimed in claim 1, wherein the mass percentage of the silver ion complexing agent in the etching solution composition is 15-30%, and the mass percentage of the C4-C10 polyhydroxy compound is 0.05-3%.
3. The long-life silver film etching solution composition according to claim 1 or 2, wherein the polyhydroxy compound is a C4 to C8 compound, and the C4 to C8 compound contains three or more hydroxyl groups.
4. The long-life silver film etchant composition according to claim 2, wherein the silver ion complexing agent is at least one selected from the group consisting of citric acid, ethylenediaminetetraacetic acid, ammonium citrate, and ammonium ethylenediaminetetraacetate.
5. The long-life silver film etching solution composition according to claim 4, which is characterized by mainly comprising, in mass percent: 5 to 15 percent of nitric acid, 10 to 20 percent of acetic acid, 15 to 29 percent of citric acid, 5 to 15 percent of organic sulfonic acid, 0.05 to 2 percent of polyhydroxy compound and 35 to 50 percent of water.
6. The long-life silver film etchant composition according to claim 1, wherein the etchant composition is used for etching a laminated film including a silver film and an ITO layer.
7. The long-life silver film etching solution composition according to claim 6, wherein the organic sulfonic acid is at least one selected from the group consisting of alkyl sulfonic acids, benzene sulfonic acids, and naphthalene sulfonic acids.
8. The long-life silver film etching solution composition according to claim 3, wherein the polyol is at least one selected from the group consisting of sorbitol, erythritol, xylitol, and mannitol.
9. The long-life silver film etching solution composition according to claim 1, wherein the organic sulfonic acid is a combination of at least one selected from methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid and hydroxyethyl sulfonic acid; the mass percentage of the hydroxyethyl sulfonic acid in the organic sulfonic acid is 32 to 40 percent based on the total mass of the organic sulfonic acid as 100 percent.
10. The etching process of the long-life silver film etching solution composition is characterized in that the temperature of the silver film etching solution composition in the etching process is 36-44 ℃.
Priority Applications (1)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116200749A (en) * | 2023-02-28 | 2023-06-02 | 深圳新宙邦科技股份有限公司 | Etching solution for multi-layer film containing indium oxide or alloy/silver or alloy thereof |
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| CN109266352A (en) * | 2018-11-08 | 2019-01-25 | 江阴江化微电子材料股份有限公司 | A kind of etchant and engraving method containing silver composite membrane |
| CN110670072A (en) * | 2018-07-03 | 2020-01-10 | 安集微电子科技（上海）股份有限公司 | Silver etching solution |
| CN111041491A (en) * | 2018-10-11 | 2020-04-21 | 三星显示有限公司 | Etchant and method for manufacturing display device using the same |
| CN111910187A (en) * | 2020-08-03 | 2020-11-10 | 镇江润晶高纯化工科技股份有限公司 | Silver etching solution composition |
| CN113652693A (en) * | 2020-05-12 | 2021-11-16 | 东友精细化工有限公司 | Silver thin film etching liquid composition, etching method using the same and metal pattern forming method |
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| CN110670072A (en) * | 2018-07-03 | 2020-01-10 | 安集微电子科技（上海）股份有限公司 | Silver etching solution |
| CN111041491A (en) * | 2018-10-11 | 2020-04-21 | 三星显示有限公司 | Etchant and method for manufacturing display device using the same |
| CN109266352A (en) * | 2018-11-08 | 2019-01-25 | 江阴江化微电子材料股份有限公司 | A kind of etchant and engraving method containing silver composite membrane |
| CN113652693A (en) * | 2020-05-12 | 2021-11-16 | 东友精细化工有限公司 | Silver thin film etching liquid composition, etching method using the same and metal pattern forming method |
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| CN116200749A (en) * | 2023-02-28 | 2023-06-02 | 深圳新宙邦科技股份有限公司 | Etching solution for multi-layer film containing indium oxide or alloy/silver or alloy thereof |
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