KR101518055B1 - Chemical Etching Composition For Metal Layer - Google Patents

Chemical Etching Composition For Metal Layer Download PDF

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KR101518055B1
KR101518055B1 KR1020080107172A KR20080107172A KR101518055B1 KR 101518055 B1 KR101518055 B1 KR 101518055B1 KR 1020080107172 A KR1020080107172 A KR 1020080107172A KR 20080107172 A KR20080107172 A KR 20080107172A KR 101518055 B1 KR101518055 B1 KR 101518055B1
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acid
film
weight
nitrate
etching
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KR1020080107172A
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Korean (ko)
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KR20100048144A (en
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이재연
이창모
양승재
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동우 화인켐 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions

Abstract

본 발명은 조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물에 관한 것이다.The present invention relates to a composition comprising, based on the total weight of the composition, from 0.5 to 15% by weight of hydrogen peroxide; 1 to 15% by weight of nitrate; From 0.05 to 10% by weight of organic acids, inorganic acids or mixtures thereof; 0.1 to 10% by weight of an organic acid salt; And a single film of AZO or silver (Ag) containing a residual amount of water, or a double film or triple film composed thereof.

AZO, 은, 삼중막, 투명전극, 화소전극 AZO, silver, triple film, transparent electrode, pixel electrode

Description

금속막 에칭액 조성물{Chemical Etching Composition For Metal Layer}[0001] The present invention relates to a metal etching composition for chemical etching,

본 발명은 TFT-LCD 및 OLED와 같은 평판표시장치 제조용 에칭액 조성물에 관한 것으로서, AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금) 또는 은(Ag)의 단일막뿐만 아니라, 이들로 구성되는 이중 또는 삼중막을 동시에 에칭할 수 있는 습식 에칭액 조성물에 관한 것이다. The present invention relates to a flat panel display device for producing the etching solution composition, such as a TFT-LCD and OLED, AZO (Aluminum - Doped Zinc Oxide; Aluminum oxide zinc alloy) or silver (Ag), as well as a double or triple film composed of the same.

TFT-LCD 및 OLED와 같은 평판표시장치 분야에서 화소전극으로는 ITO(인듐 주석 산화물)막, IZO(인듐 아연 산화물)막 등의 투명 도전막이 넓게 사용하게 되고 있다. 그러나, ITO막 및 IZO막은 상당히 고가이기 때문에, 새로운 투명 전극의 개발이 다양하게 모색되고 있다. 대표적인 예로서, AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금)막과 은(Ag)막의 삼중 적층막은 평판표시장치에서 화소전극(Pixel Electrode)으로 많이 검토되고 있다. 특히, AZO막(알루미늄산화아연 합금막)은 저항이 낮아 투명 전극으로서 주목 받고 있다. In the field of flat panel display devices such as TFT-LCDs and OLEDs, a transparent conductive film such as ITO (indium tin oxide) film or IZO (indium zinc oxide) film is widely used as a pixel electrode. However, since the ITO film and the IZO film are considerably expensive, development of a new transparent electrode has been searched for variously. As a representative example, AZO (Aluminum-Doped Zinc Oxide; Aluminum oxide zinc alloy) film and a silver (Ag) film are widely studied as a pixel electrode in a flat panel display. In particular, the AZO film (aluminum oxide zinc alloy film) has attracted attention as a transparent electrode because of its low resistance.

그런데, AZO막에 대한 에칭액은 아직 개발되어 있지 않기 때문에, 현재, ITO막과 은(Ag)막의 삼중막에 대한 인산계 에칭액을 AZO막에 대한 에칭액으로 사용하고 있다. 그러나, 이와 같은 인산계 에칭액을 상기 AZO막 또는 AZO막과 은막으로 구성되는 이중막 또는 삼중막에 적용하는 경우에, 에칭속도를 제어하기가 매우 어려운 것으로 알려져 있다. However, since an etching solution for the AZO film has not been developed yet, a phosphoric acid etching solution for the triple film of the ITO film and the silver (Ag) film is currently used as an etching solution for the AZO film. However, it is known that it is very difficult to control the etching rate when such a phosphate-based etching solution is applied to a double film or a triple film composed of the AZO film or the AZO film and the silver film.

본 발명은 종래기술의 상기와 같은 문제를 해결하기 위한 것으로서, AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금) 또는 은(Ag)의 단일막 뿐아니라, 이들로 구성되는 이중막 또는 삼중막을 효율적으로 에칭할 수 있는 조성물을 제공하는 것을 목적으로 한다. The present invention has been made to solve the above-mentioned problems of the prior art, Zinc Oxide; Aluminum oxide zinc alloy) or silver (Ag), as well as a composition capable of efficiently etching a double film or a triple film composed of these.

본 발명은 조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물을 제공한다. The present invention relates to a composition comprising, based on the total weight of the composition, from 0.5 to 15% by weight of hydrogen peroxide; 1 to 15% by weight of nitrate; From 0.05 to 10% by weight of organic acids, inorganic acids or mixtures thereof; 0.1 to 10% by weight of an organic acid salt; And a single film of AZO or silver (Ag) containing a residual amount of water, or a dual film or triple film composed of these.

또한, 본 발명은 상기 에칭액 조성물을 사용하여 식각된 화소전극을 포함하는 액정표시장치용 어레이 기판을 제공한다.The present invention also provides an array substrate for a liquid crystal display including the pixel electrodes etched using the etchant composition.

본 발명의 에칭액은 AZO 또는 은(Ag)의 단일막 뿐아니라, 이들로 구성되는 이중막 또는 삼중막도 한꺼번에 용이하게 에칭할 수 있으며, 에칭된 막의 테이퍼 프로파일이 우수하며, 잔사가 남지 않는 우수한 에칭 특성을 나타낸다. 따라서, AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막을 사용하는 평판표시장치의 제조 효율을 크게 향상시킬 수 있다. The etching solution of the present invention can easily etch not only a single film of AZO or silver (Ag), but also a double film or a triple film composed of the same at the same time. The etched film has excellent taper profile of the etched film, Lt; / RTI > Therefore, the manufacturing efficiency of a flat panel display using a single film of AZO or silver (Ag), or a double film or a triple film composed of these films can be greatly improved.

본 발명은 조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물에 관한 것이다.The present invention relates to a composition comprising, based on the total weight of the composition, from 0.5 to 15% by weight of hydrogen peroxide; 1 to 15% by weight of nitrate; From 0.05 to 10% by weight of organic acids, inorganic acids or mixtures thereof; 0.1 to 10% by weight of an organic acid salt; And a single film of AZO or silver (Ag) containing a residual amount of water, or a double film or triple film composed thereof.

본 발명의 에칭액에서 과산화수소(H2O2)는 금속막을 식각하는 주 산화제로 사용되며, 금속막에 대한 식각 선택성이 우수한 특성을 갖는다. In the etching solution of the present invention, hydrogen peroxide (H 2 O 2 ) is used as a main oxidizing agent for etching a metal film, and has an excellent property of etching selectivity for a metal film.

상기 과산화수소의 함량은 0.5 내지 15중량%가 바람직하며, 더욱 바람직하게는 1 내지 10중량%이다. 상기 과산수소의 함량이0.5중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않을 수 있으며, 15중량%를 초과하면 역테이퍼가 생겨 프로파일이 나빠질 수 있다.The content of the hydrogen peroxide is preferably 0.5 to 15% by weight, more preferably 1 to 10% by weight. If the content of hydrogen peroxide is less than 0.5 wt%, the etching force may be insufficient and sufficient etching may not be performed. If the content of hydrogen peroxide is more than 15 wt%, reverse taper may occur and the profile may deteriorate.

본 발명의 에칭액에서 질산염은 은을 에칭하여 용액내에서 안정화 시켜주는 역할을 하며, 질산염으로는 질산칼륨, 질산나트륨, 질산암모늄, 질산알루미늄, 질산철 등을 들 수 있다. 또한, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. In the etching solution of the present invention, nitrate serves to stabilize the solution in the solution by etching silver, and examples of the nitrate include potassium nitrate, sodium nitrate, ammonium nitrate, aluminum nitrate, and iron nitrate. These may be used singly or in combination of two or more.

상기 질산염의 함량은 1 내지 15중량%가 바람직하며, 1중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않을 수 있으며, 15중량%를 초과하면 프로파일이 나빠지는 문제가 발생될 수 있다. The nitrate content is preferably from 1 to 15% by weight, and if it is less than 1% by weight, the etching force may be insufficient and sufficient etching may not be performed. If it exceeds 15% by weight, the profile may be deteriorated.

본 발명의 에칭액에서 유기산, 무기산 또는 이들의 혼합물은 AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금)막을 에칭하는 역할을 하며, 유기산으로는 글리콜산(Glycolic Acid), 초산(Acetic Acid), 젖산(Lactic Acid), 글루콘산(Gluconic Acid), 개미산(Formic Acid), 구연산(Citric Acid), 옥살산(Oxalic Acid), 말론산(Malonic Acid) 등을 들 수 있으며, 무기산으로는 질산, 황산, 과염소산 등을 들 수 있다. 상기 유기산 또는 무기산은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. In the etching solution of the present invention, the organic acid, inorganic acid, or a mixture thereof may be AZO (Aluminum - Doped Zinc Oxide; Aluminum oxide zinc oxide) film. The organic acid may be selected from the group consisting of Glycolic Acid, Acetic Acid, Lactic Acid, Gluconic Acid, Formic Acid, Citric Acid, Acid, Oxalic Acid and Malonic Acid. Examples of the inorganic acid include nitric acid, sulfuric acid, perchloric acid, and the like. The organic acid or inorganic acid may be used singly or in combination of two or more.

상기 유기산, 무기산 또는 이들의 혼합물의 함량은 0.05 내지 10중량%가 바람직하며, 0.05중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않는 문제가 발생될 수 있으며, 10중량%를 초과하면 프로파일이 나빠지는 문제가 발생될 수 있다.The content of the organic acid, the inorganic acid or the mixture thereof is preferably 0.05 to 10% by weight. If the content is less than 0.05% by weight, etching may not be performed due to insufficient etching force, The problem may be worse.

본 발명의 에칭액에서 유기산염은 에칭속도를 조절할 뿐아니라, 약액의 pH조절하여 삼중막이 균일하게 에칭되게 하는 역할을 한다. 상기 유기산염으로는 개미산, 초산, 구연산암모늄, 옥살산 및 말론산의 암모늄염, 나트륨염 및 칼륨염 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다.In the etching solution of the present invention, the organic acid salt not only controls the etching rate but also controls the pH of the chemical solution to uniformly etch the triple layer. Examples of the organic acid salt include ammonium salts, sodium salts and potassium salts of formic acid, acetic acid, ammonium citrate, oxalic acid and malonic acid, and these may be used singly or in combination of two or more.

상기 유기산염의 함량은 0.1 내지 10중량%가 바람직하며, 0.1중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않는 문제가 발생될 수 있으며, 10중량%를 초과하면 식각속도가 느려져 충분한 식각성능을 발휘하지 못 하는 문제가 발생될 수 있다.The content of the organic acid salt is preferably from 0.1 to 10% by weight. If the content of the organic acid salt is less than 0.1% by weight, the etching force may be insufficient and sufficient etching may not be performed. If the content is more than 10% by weight, A problem that can not be exhibited may occur.

본 발명의 에칭액에서 물은 특별히 한정되는 것은 아니나, 탈이온수를 사용하는 것이 바람직하며, 물속에 이온이 제거된 정도를 보여주는 물의 비저항 값이 18㏁/㎝이상인 탈이온수를 사용하는 것이 더욱 바람직하다.In the etching solution of the present invention, water is not particularly limited, but it is preferable to use deionized water. It is more preferable to use deionized water having a specific resistance of water of 18 M? / Cm or more to show the degree of removal of ions in water.

본 발명에서 사용되는 과산화수소, 질산염, 유기산, 무기산 및 유기산염은 통상적으로 공지된 방법에 따라 제조가능하며, 특히 반도체 공정용 순도를 가지는 것이 바람직하다.The hydrogen peroxide, The nitrate, organic acid, inorganic acid and organic acid salt can be prepared according to a conventionally known method, and particularly preferably have purity for semiconductor processing.

본 발명의 에칭액 조성물은 에칭 성능을 향상시키기 위하여 당업계에 공지되어 있는 임의의 첨가제를 더 포함할 수 있다. 첨가제로는 계면 활성제, 금속이온 봉쇄제, 및 부식 방지제 등을 들 수 있으며 이에 한정되는 것은 아니다.The etchant composition of the present invention may further include any additive known in the art to improve the etching performance. The additives include surfactants, metal ion sequestrants, corrosion inhibitors, and the like, but are not limited thereto.

계면 활성제는 표면장력을 저하시켜 식각의 균일성을 증가시키는 역할을 한다. 이러한 계면활성제로는 식각액에 견딜 수 있고 상용성이 있는 형태의 계면활성제가 바람직하며, 예를 들면, 임의의 음이온성, 양이온성, 양쪽 이온성 또는 비이온성 계면 활성제 등을 들 수 있다. 또한, 계면활성제로서 불소계 계면활성제를 사용할 수도 있다. Surfactants decrease the surface tension and increase the uniformity of etching. As such a surfactant, a surfactant which is resistant to an etching solution and is in a compatible form is preferable, and examples thereof include any anionic, cationic, amphoteric or nonionic surfactant and the like. Further, a fluorine-based surfactant may be used as a surfactant.

이하, 본 발명을 실시예를 이용하여 더욱 상세하게 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것으로서 본 발명은 하기 실시예에 의해 한정되지 않고 다양하게 수정 및 변경될 수 있다.Hereinafter, the present invention will be described in more detail with reference to examples. However, the following examples are intended to illustrate the present invention, and the present invention is not limited by the following examples, but may be variously modified and changed.

실시예 1 내지 12.Examples 1-12.

(1) 에칭액의 제조(1) Preparation of etching solution

하기 표 1 기재된 성분 및 함량에 따라 과산화수소, 질산염, 유기산, 유기산염 및 잔량의 물로 구성된 에칭액을 제조하였다.An etchant consisting of hydrogen peroxide, nitrate, organic acid, organic acid salt and residual water was prepared according to the ingredients and contents shown in Table 1 below.

(2) 에칭 특성 테스트(2) Etching characteristic test

유리기판 위에 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)을 증착하고, 통상의 방법으로, 포토레지스트를 코팅, 노광 및 현상하여 포토레지스트가 배선모양으로 패터닝된 기판을 준비하였다. 이 기판을 상기에서 제조된 에칭액을 사용하여 30~40℃의 온도에서 스프레이 타입의 장비로 분사하여 에칭하고, 탈이온수로 세정한 후 건조하여 SEM으로 에칭 특성을 분석하고, 그 결과를 하기 표 1 및 도 1에 나타내었다.A triple film (AZO / Ag / AZO) composed of an AZO film and a silver film was deposited on a glass substrate, and a photoresist was coated, exposed and developed by a conventional method to prepare a substrate having a photoresist patterned in a wiring pattern. This substrate was sprayed with spray type equipment at a temperature of 30 to 40 캜 using the above-prepared etching solution, washed with deionized water, dried, and analyzed by SEM. The results are shown in the following Table 1 And Fig.

NoNo 조 성(중량%)Composition (% by weight) 에칭여부Etching 에칭 프로파일Etching profile 과산화수소Hydrogen peroxide 질산암모늄Ammonium nitrate 구연산Citric acid 초산암모늄Ammonium acetate 물water 1One 33 1One 0.10.1 0.10.1 잔량Balance 양호Good 양호Good 22 33 33 0.50.5 0.50.5 잔량Balance 양호Good 양호Good 33 33 55 0.70.7 1One 잔량Balance 양호Good 양호Good 44 33 1010 1One 22 잔량Balance 양호Good 양호Good 55 55 33 0.30.3 1One 잔량Balance 양호Good 양호Good 66 55 55 0.50.5 22 잔량Balance 양호Good 양호Good 77 55 77 1One 33 잔량Balance 양호Good 양호Good 88 55 1010 33 55 잔량Balance 양호Good 양호Good 99 1010 55 1One 22 잔량Balance 양호Good 양호Good 1010 1010 77 22 44 잔량Balance 양호Good 양호Good 1111 1010 1010 55 66 잔량Balance 양호Good 양호Good 1212 1010 1515 1010 1010 잔량Balance 양호Good 양호Good

상기 실시예 1 내지 12의 에칭액에 대한 테스트 결과, 표 1에 나타난 바와 같이, 모두 양호한 에칭 속도와 에칭 프로파일을 나타냄을 확인하였다. 특히, 구연산과 초산암모늄의 함량을 조절하여 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)의 에칭속도 및 프로파일 상태를 컨트롤할 수 있음을 확인하였다. SEM 평가 결과에서도 상기 실시예으 에칭액이 양호한 에칭 특성을 나타냄을 확인하였다(도 1 참조).As a result of the tests on the etching solutions of Examples 1 to 12, it was confirmed that all of them showed good etching rates and etching profiles, as shown in Table 1. Especially, it was confirmed that the etching rate and profile state of the triple layer (AZO / Ag / AZO) composed of AZO film and silver film can be controlled by controlling the contents of citric acid and ammonium acetate. As a result of the SEM evaluation, it was confirmed that the etching solution of the above example exhibited good etching characteristics (see FIG. 1).

비교예 1 내지 4.Comparative Examples 1 to 4.

하기 표 2 기재된 성분 및 함량에 따라 에칭액을 제조한 후, 그 에칭액의 에칭 특성을 상기 실시예와 동일한 조건에서 테스트 하였다.After the etching solution was prepared according to the ingredients and contents shown in Table 2 below, the etching characteristics of the etching solution were tested under the same conditions as those of the above examples.

NoNo 조 성(중량%)Composition (% by weight) 에칭여부Etching 에칭 프로파일Etching profile 과산화수소Hydrogen peroxide 질산암모늄Ammonium nitrate 구연산Citric acid 초산암모늄Ammonium acetate 물water 1One 1010 88 1One 00 잔량Balance XX -- 22 00 55 1One 1One 잔량Balance XX -- 33 33 55 00 1One 잔량Balance XX -- 44 1010 88 0.020.02 1One 잔량Balance △△ 불량Bad

그 결과, 상기 표 2에 나타난 바와 같이, 상기 실시예의 조성에 포함되어 있는 특정 성분을 넣지 않은 에칭액의 경우(비교예 1, 2 및 3), 에칭이 되지 않았으며, 유기산의 함량을 낮게 넣은(비교예 4) 경우에는 에칭은 어느 정도 가능했으나, 프로파일이 불량한 결과를 나타내었다. As a result, as shown in Table 2, in the case of an etchant containing no specific components (Comparative Examples 1, 2 and 3) contained in the composition of the embodiment, etching was not performed and the content of organic acid In the case of Comparative Example 4), etching was possible to a certain extent, but the profile showed poor results.

도 1은. 본 발명의 실시예 6의 에칭액 조성물로 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)을 식각한 결과를 나타내는 SEM 이미지이다.Fig. SEM image showing the result of etching the triple layer (AZO / Ag / AZO) composed of the AZO film and the silver film with the etchant composition of Example 6 of the present invention.

도 2는 상기 비교예 4의 에칭액 조성물로 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)을 식각한 결과를 나타내는 SEM 이미지이다.2 is an SEM image showing the result of etching a triple layer (AZO / Ag / AZO) composed of an AZO film and a silver film with the etchant composition of Comparative Example 4. FIG.

Claims (5)

조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO/Ag/AZO 삼중막용 에칭액 조성물. Relative to the total weight of the composition, from 0.5 to 15% by weight of hydrogen peroxide; 1 to 15% by weight of nitrate; From 0.05 to 10% by weight of organic acids, inorganic acids or mixtures thereof; 0.1 to 10% by weight of an organic acid salt; And an amount of residual water. 청구항 1에 있어서, 상기 질산염이 질산칼륨, 질산나트륨, 질산암모늄, 질산알루미늄 및 질산철로 이루어지는 군으로부터 선택되는 1종 이상으로 구성되는 것을 특징으로 하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물. A single film of AZO or silver (Ag), characterized in that the nitrate is composed of at least one selected from the group consisting of potassium nitrate, sodium nitrate, ammonium nitrate, aluminum nitrate and iron nitrate, Wherein the etchant composition for the double-layer or triple-layer structure comprises the composition. 청구항 1에 있어서, 상기 유기산은 글리콜산(Glycolic Acid), 초산(Acetic Acid), 젖산(Lactic Acid), 글루콘산(Gluconic Acid), 개미산(Formic Acid), 구연산(Citric Acid), 옥살산(Oxalic Acid) 및 말론산(Malonic Acid)으로 이루어지는 군으로부터 선택되는 1종 이상이며, 무기산은 질산, 황산 및 과염소산으로 이루어지는 군으로부터 선택되는 1종 이상으로 구성되는 것을 특징으로 하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물.The method of claim 1, wherein the organic acid is selected from the group consisting of Glycolic Acid, Acetic Acid, Lactic Acid, Gluconic Acid, Formic Acid, Citric Acid, Oxalic Acid, ) And malonic acid, and the inorganic acid is at least one selected from the group consisting of nitric acid, sulfuric acid and perchloric acid. Film, or a double-layer film or a triple-layer film composed of the same. 청구항 1에 있어서, 상기 유기산염은 개미산, 초산, 구연산암모늄, 옥살 산 및 말론산의 암모늄염, 나트륨염 및 칼륨염으로 이루어진 군으로부터 선택되는 1종 이상으로 구성되는 것을 특징으로 하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물. The organic acid salt according to claim 1, wherein the organic acid salt is at least one selected from the group consisting of formic acid, acetic acid, ammonium citrate, oxalic acid and malonic acid ammonium salt, sodium salt and potassium salt. ), Or a double-layer film or a triple-layer film composed of the same. 청구항 1 내지 4 중 어느 한 항의 에칭액 조성물을 사용하여 식각된 화소전극을 포함하는 액정표시장치용 어레이 기판.An array substrate for a liquid crystal display comprising a pixel electrode that is etched using the etchant composition of any one of claims 1 to 4.
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