KR20100048144A - Chemical etching composition for metal layer - Google Patents

Chemical etching composition for metal layer Download PDF

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KR20100048144A
KR20100048144A KR1020080107172A KR20080107172A KR20100048144A KR 20100048144 A KR20100048144 A KR 20100048144A KR 1020080107172 A KR1020080107172 A KR 1020080107172A KR 20080107172 A KR20080107172 A KR 20080107172A KR 20100048144 A KR20100048144 A KR 20100048144A
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acid
film
nitrate
etching
azo
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KR1020080107172A
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KR101518055B1 (en
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이재연
이창모
양승재
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동우 화인켐 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
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Abstract

PURPOSE: An etching composition for metal layer is provided to easily enable etching monolayer of AZO or silver and bilayer or trilayer thereof at the same time without residue. CONSTITUTION: An etching composition for monolayer of AZO or silver and bilayer or trilayer thereof contains 0.5-15 weight% of hydrogen peroxide, 1-15 weight% of nitrate, 0.05-10 weight% of organic acid, inorganic acid or mixture thereof, 0.1-10 weight% of organic acid salt, and residual amount of water. The nitrate is selected from potassium nitrate, sodium nitrate, ammonium nitrate, aluminum nitrate and ferric nitrate. The organic acid salt is selected from formic acid, acetic acid, oxalic acid, and malonic acid.

Description

금속막 에칭액 조성물{Chemical Etching Composition For Metal Layer}Metal Etching Composition {Chemical Etching Composition For Metal Layer}

본 발명은 TFT-LCD 및 OLED와 같은 평판표시장치 제조용 에칭액 조성물에 관한 것으로서, AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금) 또는 은(Ag)의 단일막뿐만 아니라, 이들로 구성되는 이중 또는 삼중막을 동시에 에칭할 수 있는 습식 에칭액 조성물에 관한 것이다. The present invention relates to a flat panel display device for producing the etching solution composition, such as a TFT-LCD and OLED, AZO (Aluminum - Doped Zinc Oxide; Aluminum zinc oxide alloy) or silver (Ag), as well as a wet etching liquid composition capable of simultaneously etching a double or triple film composed of them.

TFT-LCD 및 OLED와 같은 평판표시장치 분야에서 화소전극으로는 ITO(인듐 주석 산화물)막, IZO(인듐 아연 산화물)막 등의 투명 도전막이 넓게 사용하게 되고 있다. 그러나, ITO막 및 IZO막은 상당히 고가이기 때문에, 새로운 투명 전극의 개발이 다양하게 모색되고 있다. 대표적인 예로서, AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금)막과 은(Ag)막의 삼중 적층막은 평판표시장치에서 화소전극(Pixel Electrode)으로 많이 검토되고 있다. 특히, AZO막(알루미늄산화아연 합금막)은 저항이 낮아 투명 전극으로서 주목 받고 있다. Background Art In the field of flat panel display devices such as TFT-LCDs and OLEDs, transparent conductive films such as ITO (indium tin oxide) film and IZO (indium zinc oxide) film are widely used. However, since the ITO film and the IZO film are quite expensive, development of new transparent electrodes has been sought variously. As a representative example, Aluminum-Doped Zinc Oxide (AZO); The triple layered film of an aluminum zinc oxide alloy) film and a silver (Ag) film has been considered as a pixel electrode in a flat panel display device. In particular, the AZO film (aluminum zinc oxide alloy film) has a low resistance and attracts attention as a transparent electrode.

그런데, AZO막에 대한 에칭액은 아직 개발되어 있지 않기 때문에, 현재, ITO막과 은(Ag)막의 삼중막에 대한 인산계 에칭액을 AZO막에 대한 에칭액으로 사용하고 있다. 그러나, 이와 같은 인산계 에칭액을 상기 AZO막 또는 AZO막과 은막으로 구성되는 이중막 또는 삼중막에 적용하는 경우에, 에칭속도를 제어하기가 매우 어려운 것으로 알려져 있다. By the way, since the etching liquid with respect to an AZO film is not yet developed, the phosphoric acid etching liquid with respect to the triple film of an ITO film and a silver (Ag) film is currently used as an etching liquid with respect to an AZO film. However, when such a phosphate etching solution is applied to the AZO film or the double film or triple film composed of the AZO film and the silver film, it is known that the etching rate is very difficult to control.

본 발명은 종래기술의 상기와 같은 문제를 해결하기 위한 것으로서, AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금) 또는 은(Ag)의 단일막 뿐아니라, 이들로 구성되는 이중막 또는 삼중막을 효율적으로 에칭할 수 있는 조성물을 제공하는 것을 목적으로 한다. The present invention is to solve the above problems of the prior art, AZO (Aluminum-Doped) Zinc Oxide; It is an object to provide a composition capable of efficiently etching not only a single film of aluminum zinc oxide alloy) or silver (Ag), but also a double film or a triple film composed of them.

본 발명은 조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물을 제공한다. The present invention is 0.5 to 15% by weight of hydrogen peroxide relative to the total weight of the composition; Nitrate 1-15 wt%; 0.05-10% by weight of organic acid, inorganic acid or mixtures thereof; 0.1 to 10 weight percent organic acid salt; And a single film of AZO or silver (Ag) containing a residual amount of water, or a double film or triple film etching liquid composition composed thereof.

또한, 본 발명은 상기 에칭액 조성물을 사용하여 식각된 화소전극을 포함하는 액정표시장치용 어레이 기판을 제공한다.In addition, the present invention provides an array substrate for a liquid crystal display device including a pixel electrode etched using the etching liquid composition.

본 발명의 에칭액은 AZO 또는 은(Ag)의 단일막 뿐아니라, 이들로 구성되는 이중막 또는 삼중막도 한꺼번에 용이하게 에칭할 수 있으며, 에칭된 막의 테이퍼 프로파일이 우수하며, 잔사가 남지 않는 우수한 에칭 특성을 나타낸다. 따라서, AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막을 사용하는 평판표시장치의 제조 효율을 크게 향상시킬 수 있다. The etching solution of the present invention can easily etch not only a single film of AZO or silver (Ag), but also a double film or a triple film composed thereof, and has excellent taper profile of the etched film. Characteristics. Therefore, the manufacturing efficiency of a flat panel display device using a single film of AZO or silver (Ag), or a double film or triple film composed thereof can be greatly improved.

본 발명은 조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물에 관한 것이다.The present invention is 0.5 to 15% by weight of hydrogen peroxide relative to the total weight of the composition; Nitrate 1-15 wt%; 0.05-10% by weight of organic acid, inorganic acid or mixtures thereof; 0.1 to 10 weight percent organic acid salt; And a single film of AZO or silver (Ag) containing a residual amount of water, or an etching solution composition for a double film or a triple film composed thereof.

본 발명의 에칭액에서 과산화수소(H2O2)는 금속막을 식각하는 주 산화제로 사용되며, 금속막에 대한 식각 선택성이 우수한 특성을 갖는다. In the etching solution of the present invention, hydrogen peroxide (H 2 O 2 ) is used as a main oxidizing agent for etching the metal film, and has an excellent etching selectivity to the metal film.

상기 과산화수소의 함량은 0.5 내지 15중량%가 바람직하며, 더욱 바람직하게는 1 내지 10중량%이다. 상기 과산수소의 함량이0.5중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않을 수 있으며, 15중량%를 초과하면 역테이퍼가 생겨 프로파일이 나빠질 수 있다.The content of the hydrogen peroxide is preferably 0.5 to 15% by weight, more preferably 1 to 10% by weight. If the content of the hydrogen peroxide is less than 0.5% by weight may not be enough etching due to the lack of etching power, if more than 15% by weight may cause a reverse taper to worsen the profile.

본 발명의 에칭액에서 질산염은 은을 에칭하여 용액내에서 안정화 시켜주는 역할을 하며, 질산염으로는 질산칼륨, 질산나트륨, 질산암모늄, 질산알루미늄, 질산철 등을 들 수 있다. 또한, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. In the etching solution of the present invention, the nitrate serves to stabilize the solution by etching the silver, and the nitrate may include potassium nitrate, sodium nitrate, ammonium nitrate, aluminum nitrate, iron nitrate, and the like. In addition, these may be used alone or in combination of two or more.

상기 질산염의 함량은 1 내지 15중량%가 바람직하며, 1중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않을 수 있으며, 15중량%를 초과하면 프로파일이 나빠지는 문제가 발생될 수 있다. The content of the nitrate is preferably 1 to 15% by weight, insufficient etching may occur when less than 1% by weight, and when the content exceeds 15% by weight, a problem may occur that the profile is bad.

본 발명의 에칭액에서 유기산, 무기산 또는 이들의 혼합물은 AZO(Aluminum-Doped Zinc Oxide; 알루미늄산화아연 합금)막을 에칭하는 역할을 하며, 유기산으로는 글리콜산(Glycolic Acid), 초산(Acetic Acid), 젖산(Lactic Acid), 글루콘산(Gluconic Acid), 개미산(Formic Acid), 구연산(Citric Acid), 옥살산(Oxalic Acid), 말론산(Malonic Acid) 등을 들 수 있으며, 무기산으로는 질산, 황산, 과염소산 등을 들 수 있다. 상기 유기산 또는 무기산은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. In the etching solution of the present invention, an organic acid, an inorganic acid or a mixture thereof is AZO (Aluminum - Doped). Zinc Oxide; Zinc Oxide (Aluminum Zinc Alloy) film is etched, and organic acids include glycolic acid, acetic acid, lactic acid, gluconic acid, formic acid, and citric acid. Acid), oxalic acid (Oxalic Acid), malonic acid (Malonic Acid) and the like, and examples of the inorganic acid, nitric acid, sulfuric acid, perchloric acid and the like. The organic or inorganic acid may be used alone or in combination of two or more.

상기 유기산, 무기산 또는 이들의 혼합물의 함량은 0.05 내지 10중량%가 바람직하며, 0.05중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않는 문제가 발생될 수 있으며, 10중량%를 초과하면 프로파일이 나빠지는 문제가 발생될 수 있다.The content of the organic acid, inorganic acid or a mixture thereof is preferably 0.05 to 10% by weight, and less than 0.05% by weight may cause a problem that insufficient etching occurs due to insufficient etching power. This deterioration problem can occur.

본 발명의 에칭액에서 유기산염은 에칭속도를 조절할 뿐아니라, 약액의 pH조절하여 삼중막이 균일하게 에칭되게 하는 역할을 한다. 상기 유기산염으로는 개미산, 초산, 구연산암모늄, 옥살산 및 말론산의 암모늄염, 나트륨염 및 칼륨염 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다.The organic acid salt in the etching solution of the present invention not only controls the etching rate, but also serves to uniformly etch the triple layer by adjusting the pH of the chemical solution. Examples of the organic acid salt include formic acid, acetic acid, ammonium citrate, ammonium salts of oxalic acid and malonic acid, sodium salts and potassium salts, and these may be used alone or in combination of two or more.

상기 유기산염의 함량은 0.1 내지 10중량%가 바람직하며, 0.1중량% 미만이면 식각력이 부족하여 충분한 식각이 이루어지지 않는 문제가 발생될 수 있으며, 10중량%를 초과하면 식각속도가 느려져 충분한 식각성능을 발휘하지 못 하는 문제가 발생될 수 있다.The content of the organic acid salt is preferably 0.1 to 10% by weight, and less than 0.1% by weight may cause a problem that insufficient etching is not performed due to lack of etching power, and when the content exceeds 10% by weight, the etching rate is slowed to sufficient etching performance. This may cause problems.

본 발명의 에칭액에서 물은 특별히 한정되는 것은 아니나, 탈이온수를 사용하는 것이 바람직하며, 물속에 이온이 제거된 정도를 보여주는 물의 비저항 값이 18㏁/㎝이상인 탈이온수를 사용하는 것이 더욱 바람직하다.In the etching solution of the present invention, water is not particularly limited, but deionized water is preferably used, and more preferably, deionized water having a specific resistance value of 18 kV / cm or more that shows the degree of ions removed from the water.

본 발명에서 사용되는 과산화수소, 질산염, 유기산, 무기산 및 유기산염은 통상적으로 공지된 방법에 따라 제조가능하며, 특히 반도체 공정용 순도를 가지는 것이 바람직하다.Hydrogen peroxide used in the present invention, Nitrates, organic acids, inorganic acids and organic acid salts can be prepared according to commonly known methods, and it is particularly desirable to have a purity for semiconductor processing.

본 발명의 에칭액 조성물은 에칭 성능을 향상시키기 위하여 당업계에 공지되어 있는 임의의 첨가제를 더 포함할 수 있다. 첨가제로는 계면 활성제, 금속이온 봉쇄제, 및 부식 방지제 등을 들 수 있으며 이에 한정되는 것은 아니다.The etchant composition of the present invention may further include any additive known in the art to improve etching performance. The additives include, but are not limited to, surfactants, metal ion sequestrants, and corrosion inhibitors.

계면 활성제는 표면장력을 저하시켜 식각의 균일성을 증가시키는 역할을 한다. 이러한 계면활성제로는 식각액에 견딜 수 있고 상용성이 있는 형태의 계면활성제가 바람직하며, 예를 들면, 임의의 음이온성, 양이온성, 양쪽 이온성 또는 비이온성 계면 활성제 등을 들 수 있다. 또한, 계면활성제로서 불소계 계면활성제를 사용할 수도 있다. The surfactant serves to lower the surface tension to increase the uniformity of the etching. Such surfactants are preferably surfactants which are resistant to etching liquids and are compatible, and examples thereof include any anionic, cationic, zwitterionic or nonionic surfactant. Moreover, a fluorine-type surfactant can also be used as surfactant.

이하, 본 발명을 실시예를 이용하여 더욱 상세하게 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것으로서 본 발명은 하기 실시예에 의해 한정되지 않고 다양하게 수정 및 변경될 수 있다.Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following examples are provided to illustrate the present invention, and the present invention is not limited to the following examples and may be variously modified and changed.

실시예 1 내지 12.Examples 1-12.

(1) 에칭액의 제조(1) Preparation of Etching Liquid

하기 표 1 기재된 성분 및 함량에 따라 과산화수소, 질산염, 유기산, 유기산염 및 잔량의 물로 구성된 에칭액을 제조하였다.An etching solution consisting of hydrogen peroxide, nitrate, organic acid, organic acid salt and residual amount of water was prepared according to the ingredients and contents shown in Table 1 below.

(2) 에칭 특성 테스트(2) etching characteristic test

유리기판 위에 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)을 증착하고, 통상의 방법으로, 포토레지스트를 코팅, 노광 및 현상하여 포토레지스트가 배선모양으로 패터닝된 기판을 준비하였다. 이 기판을 상기에서 제조된 에칭액을 사용하여 30~40℃의 온도에서 스프레이 타입의 장비로 분사하여 에칭하고, 탈이온수로 세정한 후 건조하여 SEM으로 에칭 특성을 분석하고, 그 결과를 하기 표 1 및 도 1에 나타내었다.A triple layer (AZO / Ag / AZO) consisting of an AZO film and a silver film was deposited on the glass substrate, and a photoresist patterned substrate was prepared by coating, exposing and developing the photoresist in a conventional manner. The substrate was sprayed and etched by spraying equipment at a temperature of 30 to 40 ° C. using the etching solution prepared above, washed with deionized water and dried to analyze etching characteristics by SEM, and the results are shown in Table 1 below. And shown in FIG. 1.

NoNo 조 성(중량%)Composition (% by weight) 에칭여부Etching 에칭 프로파일Etching profile 과산화수소Hydrogen peroxide 질산암모늄Ammonium Nitrate 구연산Citric acid 초산암모늄Ammonium acetate 물water 1One 33 1One 0.10.1 0.10.1 잔량Balance 양호Good 양호Good 22 33 33 0.50.5 0.50.5 잔량Balance 양호Good 양호Good 33 33 55 0.70.7 1One 잔량Balance 양호Good 양호Good 44 33 1010 1One 22 잔량Balance 양호Good 양호Good 55 55 33 0.30.3 1One 잔량Balance 양호Good 양호Good 66 55 55 0.50.5 22 잔량Balance 양호Good 양호Good 77 55 77 1One 33 잔량Balance 양호Good 양호Good 88 55 1010 33 55 잔량Balance 양호Good 양호Good 99 1010 55 1One 22 잔량Balance 양호Good 양호Good 1010 1010 77 22 44 잔량Balance 양호Good 양호Good 1111 1010 1010 55 66 잔량Balance 양호Good 양호Good 1212 1010 1515 1010 1010 잔량Balance 양호Good 양호Good

상기 실시예 1 내지 12의 에칭액에 대한 테스트 결과, 표 1에 나타난 바와 같이, 모두 양호한 에칭 속도와 에칭 프로파일을 나타냄을 확인하였다. 특히, 구연산과 초산암모늄의 함량을 조절하여 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)의 에칭속도 및 프로파일 상태를 컨트롤할 수 있음을 확인하였다. SEM 평가 결과에서도 상기 실시예으 에칭액이 양호한 에칭 특성을 나타냄을 확인하였다(도 1 참조).As a result of the test on the etching solutions of Examples 1 to 12, it was confirmed that all exhibited good etching rates and etching profiles. In particular, it was confirmed that by controlling the content of citric acid and ammonium acetate it is possible to control the etching rate and profile state of the triple layer (AZO / Ag / AZO) consisting of AZO film and silver film. Also in the SEM evaluation result, it confirmed that the said etching liquid showed the favorable etching characteristic in the said Example (refer FIG. 1).

비교예 1 내지 4.Comparative Examples 1 to 4.

하기 표 2 기재된 성분 및 함량에 따라 에칭액을 제조한 후, 그 에칭액의 에칭 특성을 상기 실시예와 동일한 조건에서 테스트 하였다.After the etching solution was prepared according to the components and contents shown in Table 2 below, the etching characteristics of the etching solution were tested under the same conditions as in the above examples.

NoNo 조 성(중량%)Composition (% by weight) 에칭여부Etching 에칭 프로파일Etching profile 과산화수소Hydrogen peroxide 질산암모늄Ammonium Nitrate 구연산Citric acid 초산암모늄Ammonium acetate 물water 1One 1010 88 1One 00 잔량Balance XX -- 22 00 55 1One 1One 잔량Balance XX -- 33 33 55 00 1One 잔량Balance XX -- 44 1010 88 0.020.02 1One 잔량Balance △△ 불량Bad

그 결과, 상기 표 2에 나타난 바와 같이, 상기 실시예의 조성에 포함되어 있는 특정 성분을 넣지 않은 에칭액의 경우(비교예 1, 2 및 3), 에칭이 되지 않았으며, 유기산의 함량을 낮게 넣은(비교예 4) 경우에는 에칭은 어느 정도 가능했으나, 프로파일이 불량한 결과를 나타내었다. As a result, as shown in Table 2, in the case of the etching solution without the specific components included in the composition of the embodiment (Comparative Examples 1, 2 and 3), the etching was not performed, and the content of the organic acid was lowered ( In Comparative Example 4), etching was possible to some extent, but the profile was poor.

도 1은. 본 발명의 실시예 6의 에칭액 조성물로 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)을 식각한 결과를 나타내는 SEM 이미지이다.1 is. SEM image showing a result of etching a triple film (AZO / Ag / AZO) composed of an AZO film and a silver film using the etching solution composition of Example 6 of the present invention.

도 2는 상기 비교예 4의 에칭액 조성물로 AZO막과 은막으로 구성된 삼중막(AZO/Ag/AZO)을 식각한 결과를 나타내는 SEM 이미지이다.FIG. 2 is an SEM image showing a result of etching a triple layer (AZO / Ag / AZO) composed of an AZO film and a silver film using the etching solution composition of Comparative Example 4. FIG.

Claims (5)

조성물 총중량에 대하여, 과산화수소 0.5 내지 15중량%; 질산염 1 내지 15중량%; 유기산, 무기산 또는 이들의 혼합물 0.05 내지 10중량%; 유기산염 0.1 내지 10중량%; 및 잔량의 물을 포함하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물. 0.5-15% hydrogen peroxide, based on the total weight of the composition; Nitrate 1-15 wt%; 0.05-10% by weight of organic acid, inorganic acid or mixtures thereof; 0.1 to 10 weight percent organic acid salt; And a single film of AZO or silver (Ag) containing a residual amount of water, or an etching solution composition for a double film or triple film. 청구항 1에 있어서, 상기 질산염이 질산칼륨, 질산나트륨, 질산암모늄, 질산알루미늄 및 질산철로 이루어지는 군으로부터 선택되는 1종 이상으로 구성되는 것을 특징으로 하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물. The single film of AZO or silver (Ag) according to claim 1, wherein the nitrate is composed of one or more selected from the group consisting of potassium nitrate, sodium nitrate, ammonium nitrate, aluminum nitrate and iron nitrate. The etching liquid composition for double films or triple films comprised. 청구항 1에 있어서, 상기 유기산은 글리콜산(Glycolic Acid), 초산(Acetic Acid), 젖산(Lactic Acid), 글루콘산(Gluconic Acid), 개미산(Formic Acid), 구연산(Citric Acid), 옥살산(Oxalic Acid) 및 말론산(Malonic Acid)으로 이루어지는 군으로부터 선택되는 1종 이상이며, 무기산은 질산, 황산 및 과염소산으로 이루어지는 군으로부터 선택되는 1종 이상으로 구성되는 것을 특징으로 하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물.The method of claim 1, wherein the organic acid is glycolic acid (Glycolic Acid), acetic acid (Acetic Acid), lactic acid (Lactic Acid), gluconic acid (Gluconic Acid), formic acid (Formic Acid), citric acid, (Oxalic Acid) ) And malonic acid (Malonic Acid) is at least one member selected from the group consisting of AZO or silver (Ag), characterized in that composed of at least one member selected from the group consisting of nitric acid, sulfuric acid and perchloric acid. The etching liquid composition for a film | membrane or the double film | membrane or triple film which consists of these. 청구항 1에 있어서, 상기 유기산염은 개미산, 초산, 구연산암모늄, 옥살 산 및 말론산의 암모늄염, 나트륨염 및 칼륨염으로 이루어진 군으로부터 선택되는 1종 이상으로 구성되는 것을 특징으로 하는 AZO 또는 은(Ag)의 단일막, 또는 이들로 구성되는 이중막 또는 삼중막용 에칭액 조성물. The AZO or silver (Ag) according to claim 1, wherein the organic acid salt is composed of at least one selected from the group consisting of ammonium, sodium and potassium salts of formic acid, acetic acid, ammonium citrate, oxalic acid and malonic acid. Etching liquid composition for a single film | membrane of these), or the double film | membrane or triple film which consist of these. 청구항 1 내지 4 중 어느 한 항의 에칭액 조성물을 사용하여 식각된 화소전극을 포함하는 액정표시장치용 어레이 기판.An array substrate for a liquid crystal display device comprising a pixel electrode etched using the etching solution composition of claim 1.
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