TWI831116B - 封裝結構及其製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000003989 dielectric material Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 claims description 34
- 239000005022 packaging material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 69
- 238000013461 design Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 235000017550 sodium carbonate Nutrition 0.000 description 2
- 239000002335 surface treatment layer Substances 0.000 description 2
- 229930188620 butyrolactone Natural products 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Abstract
封裝結構包含基板、多個導電墊、發光二極體、感光型介電材料以及遮光層。基板包含上表面。導電墊位在基板的上表面。發光二極體位在導電墊上。感光型介電材料位在發光二極體與基板的上表面之間以及導電墊之間。發光二極體在基板上的垂直投影與感光型介電材料在基板上的垂直投影重疊。遮光層位在基板的上表面以及導電墊上。
Description
本揭露是有關於一種封裝結構及封裝結構的製造方法。
發光二極體具有發光效率高以及生命週期長等優點。發光二極體裝置應用廣泛,例如消費性電子裝置、車用燈具以及照明或裝飾等。
發光二極體的封裝結構及製程上仍面臨許多挑戰,例如如何增加發光二極體接合時的平整性及可靠度,尤其是針對微發光二極體巨量轉移技術來說更為重要。在傳統的發光二極體封裝結構中,通常利用遮光層(Black Matrix)遮蔽來自發光二極體下方的導電墊的反射。然而,目前對於遮光層的曝光顯影技術仍具有較大的公差(約100微米),使導電墊無法完全被遮蔽。因此,自遮光層露出的導電墊容易反射發光二極體發出的光線導致對比度下降。
有鑑於此,如何提供一種可解決上述問題的封裝結構,仍是目前業界亟需研究的目標之一。
本揭露之一技術態樣為一種封裝結構。
在一實施例中,封裝結構包含基板、多個導電墊、發光二極體、感光型介電材料以及遮光層。基板包含上表面。導電墊位在基板的上表面。發光二極體位在導電墊上。感光型介電材料位在發光二極體與基板的上表面之間以及導電墊之間。發光二極體在基板上的垂直投影與感光型介電材料在基板上的垂直投影重疊。遮光層位在基板的上表面以及導電墊上。
在一實施例中,感光型介電材料接觸發光二極體面對基板的下表面。
在一實施例中,遮光層接觸發光二極體的側壁。
在一實施例中,封裝結構還包含封裝材料,位在遮光層與發光二極體上。
在一實施例中,遮光層隔開封裝材料導電墊。
本揭露之另一技術態樣為一種封裝結構製造方法。
在一實施例中,製造方法包含形成多個導電墊於基板的上表面;設置半固化的感光型介電材料於基板的上表面以及導電墊之間;接合發光二極體於導電墊上,使得發光二極體在基板上的垂直投影與感光型介電材料在基板上的垂直投影重疊;形成遮光層以覆蓋導電墊與發光二極體;以及形成封裝材料以覆蓋遮光層與發光二極體。
在一實施例中,設置感光型介電材料的步驟包含塗佈未固化的感光型介電材料層;以及圖案化感光型介電材料層以形成半固化的感光型介電材料。
在一實施例中,接合發光二極體的步驟還包含同時固化感光型介電材料,並使得發光二極體面對基板的下表面接觸固化後的感光型介電材料。
在一實施例中,形成遮光層的步驟還包含塗佈遮光層材料以覆蓋基板與發光二極體,使得遮光層圍繞發光二極體並接觸發光二極體的一側壁;以及減少遮光層的厚度,使得發光二極體背對基板的上表面自遮光層露出。
在一實施例中,減少遮光層的厚度的步驟還包含使發光二極體的側壁的一部分自遮光層露出。
在上述實施例中,本揭露藉由設置感光型介電材料於發光二極體與基板之間,使感光型介電材料輔助黏合發光二極體至基板上。這樣的設計可提升封裝結構的可靠度及平整性。本揭露藉由使遮光層覆蓋導電墊,可使得發光二極體顯示器具有高對比度色彩表現。此外,接合發光二極體的步驟與固化感光型介電材料的步驟可同時達成,因此可無需於接合步驟後再增加額外的加熱程序。
以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。且為了清楚起見,圖式中之層和區域的厚度可能被誇大,並且在圖式的描述中相同的元件符號表示相同的元件。
第1圖為根據本揭露一實施例之封裝結構100的上視圖。第2圖為第1圖之封裝結構100省略遮光層150的上視圖。第3圖為沿著第1圖的線段3-3的剖面圖。為了方便說明,遮光層150於第1圖及第2圖中省略。同時參照第1圖至第3圖。封裝結構100包含基板110、導電墊120、感光型介電材料130、發光二極體140、142、144以及遮光層150。發光二極體140、142、144可以是微發光二極體(Micro LED)或次毫米發光二極體(Mini LED)。本實施例中的發光二極體140、142、144可以分別為紅色、綠色及藍色的光源,但不以此為限。
如第3圖所示,基板110包含上表面112,且多個導電墊120位在基板110的上表面112。發光二極體140、142、144位在導電墊120上。感光型介電材料130位在發光二極體140、142、144與基板110的上表面112之間以及導電墊120之間。如第2圖所示,發光二極體140、142、144在基板110上的垂直投影與感光型介電材料130在基板110上的垂直投影重疊。發光二極體142與導電墊120電性連接,感光型介電材料130填滿導電墊120、發光二極體140、142、144與基板110之間的空隙。
如第1圖及第3圖所示,遮光層150位在基板110的上表面112以及導電墊120上。遮光層150圍繞發光二極體142,且遮光層150接觸發光二極體142的側壁1426。具體來說,導電墊120被遮光層150完整地覆蓋。也就是說,只有發光二極體140、142、144自遮光層150露出,且遮光層150與發光二極體142之間無縫隙。如此一來,可避免導電墊120反射發光二極體140、142、144發出的光線而造成對比度下降。因此,本揭露的封裝結構100可使得發光二極體顯示器具有高對比度色彩表現。
在習知的封裝結構中,在塗佈遮光層材料之後仍有空隙存在於發光二極體與基板之間。即便有遮光層材料被填入此空隙中,也會因後續製程中的高溫而產生氣泡。這樣的問題會導致產品可靠度下降或是影響微發光二極體巨量轉移的效果。如第3圖所示,在本揭露的封裝結構100中,發光二極體142與基板110之間的空隙被感光型介電材料130填滿。感光型介電材料130接觸發光二極體142面對基板110的下表面1424,使感光型介電材料130輔助黏合發光二極體142至基板110上。藉由這樣的設計,可提升封裝結構100的可靠度及平整性。
第4圖至第9圖為根據本揭露一實施例之封裝結構100a的製造方法的剖面圖。如第4圖所示,首先提供基板110。基板110放置於載板160上。多個導電墊120形成於基板110背對載板160的上表面112。在本實施例中,基板110包含重分佈層114。在其他實施例中,基板110也可為印刷電路板PCB。
如第5圖所示,接著將半固化(b-stage)的感光型介電材料130B設置於基板110的上表面112以及導電墊120之間。具體來說,在此步驟中,未固化的感光型介電材料層首先塗佈於基板110以及導電墊120上。接著執行圖案化(曝光及顯影)的步驟,留下位在導電墊120之間的區域感光型介電材料層。如同前述,半固化的感光型介電材料130B是放置在後續步驟中接合的發光二極體140、142、144的位置下方。此處所指的區域是指用來電性連接同一個發光二極體的兩個導電墊120之間的空隙。接著,透過加熱使此區域的感光型介電材料達到半固化狀態。換句話說,此步驟中半固化的感光型介電材料130B仍具有黏性且可因受壓而產生形變。感光型介電材料130可根據溶劑種類區分,例如以環戊酮(Cyclopetanone)、四甲基氫氧化銨(TMAOH)、丁內酯(GBL)與丙二醇甲醚(PGMEA)混合物、碳酸鈉(Na2CO3與碳酸鉀(K2CO3)混合物為基底的材料。
如第6圖所示,接著將發光二極體 140、142、144接合至導電墊120以及感光型介電材料130上。具體來說,導電墊120上包含表面處理層170,用以避免導電墊120氧化。接合發光二極體 140、142、144的步驟可透過巨量轉移(Mass transfer)方式執行。在執行接合步驟時,來自轉移頭(Transfer head)、腔體或是平台的溫度可同時讓半固化的感光型介電材料130B受熱而固化。舉例來說,周圍環境可升高到約150度至260度。如此一來,接合的步驟與固化感光型介電材料130的步驟可同時達成,因此可無需於接合步驟後再增加額外的加熱程序。此外,將發光二極體 140、142、144接合至導電墊120以及感光型介電材料130上時所施加的壓力可擠壓半固化的感光型介電材料130B,藉此使得發光二極體140、142、144面對基板110的下表面1404、1424、1444接觸固化後的感光型介電材料130。如此一來,可使感光型介電材料130輔助黏合發光二極體140、142、144至基板110上。藉由這樣的設計提升可封裝結構100a的可靠度及平整性。
如第7圖所示,接著塗佈遮光層材料150M以覆蓋導電墊120以及發光二極體140、142、144。由於發光二極體140、142、144與基板110之間的空隙已經由感光型介電材料130填滿,因此遮光層材料150M不會填入至此空隙中。如同前述,這樣的方法可避免遮光層材料150M因後續製程中的高溫而產生氣泡,導致產品可靠度下降或是影響微發光二極體140、142、144巨量轉移的效果。
如第7圖及第8圖所示,接著減少遮光層材料150M的厚度。如第8圖所示,發光二極體140、142、144背對基板110的上表面1402、1422、1442自遮光層150露出。在本實施例中,減薄遮光層材料150M可藉由化學機械平坦化製程(Chemical-Mechanical Planarization, CMP)或研磨製程(Grinding)達成。減薄後的遮光層150的上表面152與發光二極體140、142、144的上表面1402、1422、1442齊平。由此可知,本揭露的製造方法,無需利用曝光顯影製程使發光二極體140、142、144的上表面1402、1422、1442自遮光層150露出。
在習知的方法中,由於遮光層的曝光及顯影技術的公差(tolerance)大約100微米,導致導電墊120無法完整地被圖案化後的遮光層覆蓋。換句話說,遮光層與發光二極體之間具有縫隙,導電墊會反射發光二極體發出的光線而導致對比度下降。
同時參照第2圖與第8圖,本揭露的製造方法中省略了對遮光層材料150M執行曝光及顯影的步驟,因此遮光層150可接觸發光二極體140、142、144的側壁1406、1426、1446。本揭露的製造方法可使得遮光層150圍繞發光二極體140、142、144,且遮光層150與發光二極體140、142、144之間無縫隙。
如第9圖所示,接著形成封裝材料180以覆蓋遮光層150與發光二極體140、142、144。由於遮光層150完整地覆蓋導電墊120,因此封裝材料180與導電墊120之間可由遮光層150隔開。如同前述,這樣的設計可避免導電墊120反射發光二極體140、142、144發出的光線而造成對比度下降,可使得發光二極體顯示器具有高對比度色彩。在形成封裝材料180後,接續進行載板160脫離以及裁切等製程,於此不贅述。
第10圖至第11圖為根據本揭露另一實施例之封裝結構100b的製造方法的剖面圖。封裝結構100b的製造方法與前述第4圖至第7圖所述的步驟內容相同,封裝結構100b的製造方法前述封裝結構100a的製造方法之間的差異在於減少遮光層材料150M的厚度的步驟。
如第10圖所示,在本實施例中,在執行塗佈遮光層材料150M的步驟(第7圖所示),接著減少遮光層材料150M的厚度。減薄遮光層材料150M可藉由雷射蝕刻或電漿蝕刻達成。減薄後的遮光層150a的上表面152a低於發光二極體140、142、144的上表面1402、1422、1442。發光二極體140、142、144的側壁1406、1426、1446的一部分自遮光層150a露出。舉例來說,發光二極體140、142、144凸出於遮光層150a的厚度大約為1微米至2微米。由此可知,在本實施例的製造方法中也無需利用曝光顯影製程使發光二極體140、142、144的上表面1402、1422、1442自遮光層150a露出。
如第11圖所示,接著形成封裝材料180以覆蓋遮光層150a與發光二極體140、142、144。在本實施例中,封裝材料180接觸發光二極體140、142、144的側壁1406、1426、1446。由於遮光層150a完整地覆蓋導電墊120,因此封裝材料180與導電墊120之間可由遮光層150a隔開。封裝結構100b具有與封裝結構100a相同的技術功效,於此不再贅述。
綜上所述,本揭露藉由設置感光型介電材料於發光二極體與基板之間,使感光型介電材料輔助黏合發光二極體至基板上。藉由這樣的設計提升封裝結構的可靠度及平整性。本揭露藉由使遮光層與發光二極體之間無縫隙,可使得發光二極體顯示器具有高對比度色彩表現。此外,接合發光二極體的步驟與固化感光型介電材料的步驟可同時達成,因此可無需於接合步驟後再增加額外的加熱程序。
雖然本揭露已以實施方式揭露如上,然其並非用以限定本揭露,任何熟習此技藝者,在不脫離本揭露之精神和範圍內,當可作各種之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。
100,100a,100b:封裝結構
110:基板
112:上表面
114:重分佈層
120:導電墊
130:感光型介電材料
130B:半固化的感光型介電材料
140,142,144:發光二極體
1402,1422,1442:上表面
1404,1424,1444:下表面
1406,1426,1446:側壁
150,150a:遮光層
150M:遮光層材料
152,152a:上表面
160:載板
170:表面處理層
180:封裝材料
3-3:線段
第1圖為根據本揭露一實施例之封裝結構的上視圖。
第2圖為第1圖之封裝結構省略遮光層的上視圖。
第3圖為沿著第1圖的線段3-3的剖面圖。
第4圖至第9圖為根據本揭露一實施例之封裝結構的製造方法的剖面圖。
第10圖至第11圖為根據本揭露另一實施例之封裝結構的製造方法的剖面圖。
100:封裝結構
110:基板
120:導電墊
130:感光型介電材料
140,142,144:發光二極體
1426:側壁
Claims (10)
- 一種封裝結構,包含: 一基板,包含一上表面; 複數個導電墊,位在該基板的該上表面; 一發光二極體,位在該些導電墊上; 一感光型介電材料,位在該發光二極體與該基板的該上表面之間以及該些導電墊之間,其中該發光二極體在該基板上的垂直投影與感光型介電材料在該基板上的垂直投影重疊;以及 一遮光層,位在該基板的該上表面以及該些導電墊上。
- 如請求項1所述之封裝結構,其中該感光型介電材料接觸該發光二極體面對該基板的一下表面。
- 如請求項1所述之封裝結構,其中該遮光層接觸該發光二極體的一側壁。
- 如請求項1所述之封裝結構,還包含: 一封裝材料,位在該遮光層與該發光二極體上。
- 如請求項4所述之封裝結構,其中該遮光層隔開該封裝材料與該些導電墊。
- 一種封裝結構的製造方法,包含: 形成複數個導電墊於一基板的一上表面; 設置半固化的一感光型介電材料於該基板的該上表面以及該些導電墊之間; 接合一發光二極體於該些導電墊上,使得該發光二極體在該基板上的垂直投影與該感光型介電材料在該基板上的垂直投影重疊; 形成一遮光層以覆蓋該些導電墊與該發光二極體;以及 形成一封裝材料以覆蓋該遮光層與該發光二極體。
- 如請求項6所述之封裝結構的製造方法,其中該設置該感光型介電材料的步驟包含: 塗佈未固化的一感光型介電材料層;以及 圖案化該感光型介電材料層以形成半固化的該感光型介電材料。
- 如請求項6所述之封裝結構的製造方法,其中該接合該發光二極體的步驟還包含: 同時固化該感光型介電材料,並使得該發光二極體面對該基板的一下表面接觸固化後的該感光型介電材料。
- 如請求項6所述之封裝結構的製造方法,其中該形成該遮光層的步驟還包含: 塗佈一遮光層材料以覆蓋該基板與該發光二極體,使得該遮光層接觸該發光二極體的一側壁;以及 減少該遮光層的厚度,使得該發光二極體背對該基板的一上表面自該遮光層露出。
- 如請求項9所述之封裝結構的製造方法,其中該減少該遮光層的厚度的步驟還包含: 使該發光二極體的該側壁的一部分自該遮光層露出。
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