TWI830764B - Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film - Google Patents

Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film Download PDF

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TWI830764B
TWI830764B TW108128195A TW108128195A TWI830764B TW I830764 B TWI830764 B TW I830764B TW 108128195 A TW108128195 A TW 108128195A TW 108128195 A TW108128195 A TW 108128195A TW I830764 B TWI830764 B TW I830764B
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layer
mass
terminal
adhesive
terminals
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TW108128195A
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TW202017464A (en
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坂東沙也香
佐藤明徳
中石康喜
岡本直也
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日商琳得科股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/022—Mechanical properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)

Abstract

The present invention relates to a terminal protecting tape (1) used in a step of forming an electromagnetic wave shielding film on a terminal-attached semiconductor device, the terminal protecting tape comprises a viscoelastic layer (12), in which a value of tan δ at 50°C is 0.2 or more in the dynamic viscoelasticity measurement of the viscoelastic layer (12), and a thickness of the viscoelastic layer (12) is 80 to 800 μm.

Description

端子保護用膠帶以及附電磁波屏蔽膜之半導體裝置的製造方法Terminal protection tape and method for manufacturing semiconductor device with electromagnetic wave shielding film

本發明係關於一種端子保護用膠帶以及使用該端子保護用膠帶之附電磁波屏蔽膜之半導體裝置的製造方法。 The present invention relates to a terminal protective tape and a method of manufacturing a semiconductor device with an electromagnetic wave shielding film using the terminal protective tape.

本申請案係基於2018年8月8日於日本提出申請之日本專利申請案2018-149699號而主張優先權，將該申請案之內容援用至本文中。 This application claims priority based on Japanese Patent Application No. 2018-149699 filed in Japan on August 8, 2018, and the contents of this application are incorporated into this article.

先前，於將用於MPU(Micro Processor Unit；微處理單元)或閘陣列(gate array)等的多接腳之LSI(Large Scale Integration；大型積體電路)封裝(package)安裝於印刷配線基板之情形時，作為具有多個電子零件之半導體裝置，係使用於該半導體裝置之連接墊部形成有由共晶焊料、高溫焊料、金等所構成之凸狀電極(以下，於本說明書中稱為「端子」)者。而且，採用使該等端子面向、接觸於晶片搭載用基板上之相對應之端子部並進行熔融/擴散接合的安裝方法。 Previously, a multi-pin LSI (Large Scale Integration) package used for an MPU (Micro Processor Unit) or a gate array was mounted on a printed wiring board. In this case, as a semiconductor device having a plurality of electronic components, a bump-shaped electrode made of eutectic solder, high-temperature solder, gold, etc. is formed on the connection pad portion of the semiconductor device (hereinafter, referred to in this specification as "Terminal"). Furthermore, a mounting method is adopted in which the terminals face and contact corresponding terminal portions on the chip mounting substrate and are melted/diffused bonded.

網際網路(Internet)隨著個人電腦之普及而變得普遍，當前，智慧型手機(smartphone)或平板終端亦連接於網際網路，藉由無線通訊技術將經數位化之影像、音樂、照片、文字資訊等經由網際網路傳播之場景日益增加。進而，IoT(Internet of Things；物聯網)普及，將對用以在家電、汽車等各種應用領域中更為智能地使用感測器、RFID(Radio frequency identifier；無線射頻識別器)、MEMS(Micro Electro Mechanical Systems；微機電系統)、無線組件(wireless component)等半導體元件之封裝技術帶來革新的變革。 The Internet has become common with the popularization of personal computers. Currently, smartphones or tablet terminals are also connected to the Internet, using wireless communication technology to digitize images, music, and photos. , text information, etc. are increasingly spread through the Internet. Furthermore, the spread of IoT (Internet of Things; Internet of Things) will lead to more intelligent use of sensors, RFID (Radio frequency) in various application fields such as home appliances and automobiles. The packaging technology of semiconductor components such as identifier (RFID), MEMS (Micro Electro Mechanical Systems; micro-electromechanical systems), and wireless components has brought about innovative changes.

於如此般電子機器持續進化之過程中，對半導體元件之要求水準逐年提高。尤其若欲響應針對高性能化、小型化、高積體化、低消耗電力化、低成本化之需求，則熱對策、雜訊對策兩者成為要點。 As electronic machines continue to evolve, the requirements for semiconductor components are increasing year by year. Especially if we want to respond to the demands for high performance, miniaturization, high integration, low power consumption, and low cost, both thermal countermeasures and noise countermeasures become key points.

對應於此種熱對策、雜訊對策，例如專利文獻1所揭示般，正採用藉由導電材料將電子零件模組包覆而形成屏蔽層之方法。專利文獻1中，將塗佈於經單片化之電子零件模組之頂面及側面之導電性樹脂加熱而進行硬化，形成屏蔽層。 In response to such thermal and noise countermeasures, for example, as disclosed in Patent Document 1, a method of covering an electronic component module with a conductive material to form a shielding layer is being adopted. In Patent Document 1, conductive resin coated on the top and side surfaces of a singulated electronic component module is heated and hardened to form a shielding layer.

作為藉由導電材料將附端子之半導體裝置包覆而形成屏蔽層之方法，亦已知有濺鍍、離子鍍、噴塗等方法。 As a method of covering a semiconductor device with terminals with a conductive material to form a shielding layer, methods such as sputtering, ion plating, and spray coating are also known.

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Document]

專利文獻1：日本特開2011-151372號公報。 Patent Document 1: Japanese Patent Application Publication No. 2011-151372.

專利文獻1所揭示之電子零件的製造方法中，設於集合基板之背面之外部端子電極係以嵌埋於黏著性片材之狀態而塗佈導電性樹脂。因於黏著性片材之預定位置設有遮蔽部，故而可防止外部端子電極與電磁波屏蔽膜電性短路。 In the manufacturing method of electronic components disclosed in Patent Document 1, the external terminal electrodes provided on the back surface of the collective substrate are coated with conductive resin in a state of being embedded in an adhesive sheet. Since the shielding portion is provided at a predetermined position of the adhesive sheet, electrical short circuit between the external terminal electrode and the electromagnetic wave shielding film can be prevented.

但是，視外部端子電極之高度或形狀不同，有時無法保持外部端子電極充分嵌埋於黏著性片材之狀態，而有外部端子電極與電磁波屏 蔽膜電性短路之虞。另外，於黏著性片材之預定位置設置遮蔽部係於步驟上繁雜。 However, depending on the height or shape of the external terminal electrodes, it may not be possible to keep the external terminal electrodes fully embedded in the adhesive sheet, and the external terminal electrodes and the electromagnetic wave shield may not be fully embedded. The shielding film may cause electrical short circuit. In addition, setting the shielding portion at a predetermined position of the adhesive sheet is complicated in steps.

因此，本發明之目的在於提供一種端子保護用膠帶以及使用該端子保護用膠帶之附電磁波屏蔽膜之半導體裝置的製造方法，上述端子保護用膠帶係用於對附端子之半導體裝置形成電磁波屏蔽膜之步驟，並且，即便為焊料球等具有凹凸而容易產生浮起之端子電極亦可嵌埋。 Therefore, an object of the present invention is to provide a terminal protection tape for forming an electromagnetic wave shielding film on a semiconductor device with terminals and a method of manufacturing a semiconductor device with an electromagnetic wave shielding film using the terminal protection tape. Furthermore, even terminal electrodes such as solder balls that have unevenness and are prone to floating can be embedded.

亦即，本發明提供以下之端子保護用膠帶以及使用該端子保護用膠帶之附電磁波屏蔽膜之半導體裝置的製造方法。 That is, the present invention provides the following terminal protection tape and a method of manufacturing a semiconductor device with an electromagnetic wave shielding film using the terminal protection tape.

[1]一種端子保護用膠帶，係用於對附端子之半導體裝置形成電磁波屏蔽膜之步驟中；前述端子保護用膠帶具有黏彈性層；於前述黏彈性層之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，前述黏彈性層之厚度為80μm至800μm。 [1] A terminal protection tape used in the step of forming an electromagnetic wave shielding film for a semiconductor device with terminals; the terminal protection tape has a viscoelastic layer; in the dynamic viscoelasticity measurement of the viscoelastic layer, at 50 The value of tanδ at ℃ is above 0.2, and the thickness of the aforementioned viscoelastic layer is 80 μm to 800 μm.

[2]如前述[1]所記載之端子保護用膠帶，其中前述黏彈性層於50℃之儲存彈性模量G’(50℃)(MPa)、前述端子之高度h0(μm)及前述黏彈性層之厚度d1(μm)滿足下述式(1)及式(2)。 [2] The terminal protection tape as described in the aforementioned [1], wherein the storage elastic modulus G' (50°C) (MPa) of the aforementioned viscoelastic layer at 50°C, the height h0 (μm) of the aforementioned terminal and the aforementioned adhesive The thickness d1 (μm) of the elastic layer satisfies the following formulas (1) and (2).

0.01MPa≦G’(50℃)≦15MPa…(1) 0.01MPa≦G’(50℃)≦15MPa…(1)

1.2≦d1/h0≦5.0…(2) 1.2≦d1/h0≦5.0…(2)

[3]如前述[1]或[2]所記載之端子保護用膠帶，其中前述黏彈性層於25℃之儲存彈性模量G’(25℃)(MPa)滿足下述式(3)。 [3] The terminal protection tape according to the above [1] or [2], wherein the storage elastic modulus G' (25°C) (MPa) of the viscoelastic layer at 25°C satisfies the following formula (3).

0.05MPa≦G’(25℃)≦20MPa…(3) 0.05MPa≦G’(25℃)≦20MPa…(3)

[4]如前述[1]至[3]中任一項所記載之端子保護用膠帶，其中前述黏彈性層具有嵌埋層及黏著劑層。 [4] The terminal protection tape according to any one of [1] to [3] above, wherein the viscoelastic layer has an embedding layer and an adhesive layer.

[5]如前述[4]所記載之端子保護用膠帶，其中係依序具有前述黏著劑層、前述嵌埋層及基材。 [5] The terminal protection tape according to the above [4], which has the above-mentioned adhesive layer, the above-mentioned embedding layer and a base material in this order.

[6]如前述[5]所記載之端子保護用膠帶，其為依序具有前述黏著劑層、前述嵌埋層、前述基材及第二黏著劑層之雙面膠帶。 [6] The terminal protection tape according to the above [5], which is a double-sided tape having the adhesive layer, the embedding layer, the base material and the second adhesive layer in this order.

[7]一種附電磁波屏蔽膜之半導體裝置的製造方法，係包括：使前述附端子之半導體裝置之端子埋設於如前述[1]至[6]中任一項所記載之端子保護用膠帶之黏彈性層的步驟；以及於未埋設於前述端子保護用膠帶之黏彈性層的前述附端子之半導體裝置之露出面形成電磁波屏蔽膜的步驟。 [7] A method of manufacturing a semiconductor device with an electromagnetic wave shielding film, which includes burying terminals of the semiconductor device with terminals in the terminal protection tape according to any one of the above [1] to [6]. The steps of forming a viscoelastic layer; and the step of forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals that is not embedded in the viscoelastic layer of the terminal protective tape.

[8]一種附電磁波屏蔽膜之半導體裝置的製造方法，係包括：使附端子之半導體裝置集合體之端子埋設於如前述[1]至[6]中任一項所記載之端子保護用膠帶之黏彈性層的步驟；將前述附端子之半導體裝置集合體切割，將前述附端子之半導體裝置集合體製成使端子埋設於前述端子保護用膠帶之黏彈性層的附端子之半導體裝置的步驟；以及於未埋設於前述端子保護用膠帶之黏彈性層的前述附端子之半導體裝置之露出面形成電磁波屏蔽膜的步驟。 [8] A method of manufacturing a semiconductor device with an electromagnetic wave shielding film, which includes embedding terminals of a semiconductor device assembly with terminals in the terminal protection tape according to any one of the above [1] to [6] the step of cutting the aforementioned viscoelastic layer of the terminal-attached semiconductor device assembly, and forming the aforementioned terminal-attached semiconductor device assembly into a semiconductor device with terminals such that the terminals are embedded in the viscoelastic layer of the aforementioned terminal-protecting tape; ; and the step of forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals that is not embedded in the viscoelastic layer of the terminal protective tape.

根據本發明，提供一種端子保護用膠帶以及使用該端子保護用膠帶之附電磁波屏蔽膜之半導體裝置的製造方法，上述端子保護用膠帶係用於對附端子之半導體裝置形成電磁波屏蔽膜之步驟，並且，即便為焊料球等容易產生浮起之端子電極亦可嵌埋。 According to the present invention, there is provided a terminal protection tape and a method of manufacturing a semiconductor device with an electromagnetic wave shielding film using the terminal protection tape. The terminal protection tape is a step for forming an electromagnetic wave shielding film on a semiconductor device with a terminal. In addition, even terminal electrodes that are prone to floating, such as solder balls, can be embedded.

1、2、3:端子保護用膠帶 1, 2, 3: Terminal protection tape

6:附端子之半導體裝置集合體 6: Semiconductor device assembly with terminals

10:電磁波屏蔽膜 10: Electromagnetic wave shielding film

11:基材 11:Substrate

12:黏彈性層 12:Viscoelastic layer

13:嵌埋層 13: Embedded layer

14:黏著劑層 14: Adhesive layer

15:第二黏著劑層(貼合黏著劑層) 15: Second adhesive layer (fitting adhesive layer)

20、21、22:剝離膜 20, 21, 22: peeling film

30:支撐體 30:Support

60:半導體裝置集合體 60: Semiconductor device assembly

60a、63a:端子形成面 60a, 63a: Terminal forming surface

61、62:電子零件 61, 62: Electronic parts

63:電路基板 63:Circuit substrate

64:密封樹脂層 64:Sealing resin layer

65:附端子之半導體裝置 65: Semiconductor device with terminals

66:附電磁波屏蔽膜之半導體裝置 66: Semiconductor device with electromagnetic wave shielding film

91:端子 91:Terminal

101:導電性樹脂 101:Conductive resin

圖1為示意性地表示本發明之端子保護用膠帶之一實施形態的剖面圖。 FIG. 1 is a cross-sectional view schematically showing one embodiment of the terminal protective tape of the present invention.

圖2為示意性地表示本發明之端子保護用膠帶之其他實施形態的剖面圖。 2 is a cross-sectional view schematically showing another embodiment of the terminal protective tape of the present invention.

圖3為示意性地表示本發明之端子保護用膠帶之其他實施形態的剖面圖。 3 is a cross-sectional view schematically showing another embodiment of the terminal protection tape of the present invention.

圖4為示意性地表示本發明之端子保護用膠帶之其他實施形態的剖面圖。 4 is a cross-sectional view schematically showing another embodiment of the terminal protective tape of the present invention.

圖5為示意性地表示本發明之附電磁波屏蔽膜之半導體裝置的製造方法之一實施形態的剖面圖。 5 is a cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present invention.

圖6為示意性地表示本發明之附電磁波屏蔽膜之半導體裝置的製造方法之其他實施形態的剖面圖。 6 is a cross-sectional view schematically showing another embodiment of a method for manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present invention.

圖7為示意性地表示比較例之附電磁波屏蔽膜之半導體裝置的製造方法之例的剖面圖。 7 is a cross-sectional view schematically showing an example of a method of manufacturing a semiconductor device with an electromagnetic wave shielding film according to a comparative example.

圖1為示意性地表示本發明之端子保護用膠帶之一實施形態的剖面圖。再者，關於以下之說明中所用之圖，有時為了容易地理解本發明之特徵，為方便起見而將成為主要部之部分放大表示，各構成要素之尺寸比率等未必與實際相同。 FIG. 1 is a cross-sectional view schematically showing one embodiment of the terminal protective tape of the present invention. In addition, in the drawings used in the following description, in order to easily understand the characteristics of the present invention, the main parts may be enlarged for convenience, and the dimensional ratio of each component may not be the same as the actual one.

圖1所示之端子保護用膠帶1係用於對附端子之半導體裝置形成電磁波屏蔽膜之步驟，並且，具有由嵌埋層13及黏著劑層14所構成之黏彈性層12。於黏彈性層12之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層12之厚度為80μm至800μm。 The terminal protection tape 1 shown in FIG. 1 is used to form an electromagnetic wave shielding film on a semiconductor device with terminals, and has a viscoelastic layer 12 composed of an embedding layer 13 and an adhesive layer 14. In the dynamic viscoelasticity measurement of the viscoelastic layer 12, the value of tan δ at 50°C is above 0.2, and the thickness of the viscoelastic layer 12 is 80 μm to 800 μm.

本實施形態之端子保護用膠帶如圖1所示，亦可於黏彈性層12之嵌埋層13之側之最表層具備剝離膜21，亦可於黏彈性層12之黏著劑層14之側之最表層具備剝離膜20。 The terminal protection tape of this embodiment is as shown in Figure 1. It can also have a peeling film 21 on the outermost layer of the viscoelastic layer 12 on the side of the embedded layer 13, or it can also be provided on the side of the adhesive layer 14 of the viscoelastic layer 12. The outermost layer is provided with a peeling film 20 .

本實施形態之端子保護用膠帶不限於圖1所示者，亦可於不損及本發明之功效之範圍內，於圖1所示者中變更、刪除或追加一部分構成。 The terminal protection tape of this embodiment is not limited to what is shown in FIG. 1 , and part of the structure may be changed, deleted, or added to what is shown in FIG. 1 within the scope that does not impair the effect of the present invention.

圖1所示之端子保護用膠帶1可用於下述步驟：將兩方的剝離膜20、剝離膜21剝離，載置於支撐體上，自該端子保護用膠帶1上將附端子之半導體裝置以端子之側為下而按壓，將端子埋設於黏彈性層12，進而自該附端子之半導體裝置上形成電磁波屏蔽膜。於黏彈性層12之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層12之厚度為80μm至800μm，故而於附端子之半導體裝置之端子埋設於黏彈性層12時，即便為焊料球等具有凹凸而容易產生浮起之端子電極亦可埋設，可使作為對象之附端子之半導體裝置之端子形成面密接於黏彈性層12。結果可防止端子電極與電磁波屏蔽膜電性短路，亦無需設置於步驟上繁雜之遮蔽部等。 The terminal protection tape 1 shown in FIG. 1 can be used in the following steps: peel off the release film 20 and the release film 21 on both sides, place it on a support, and remove the semiconductor device with terminals from the terminal protection tape 1 Press with the side of the terminal facing down to bury the terminal in the viscoelastic layer 12, and then form an electromagnetic wave shielding film on the semiconductor device with the terminal. In the dynamic viscoelasticity measurement of the viscoelastic layer 12, the value of tan δ at 50°C is above 0.2, and the thickness of the viscoelastic layer 12 is 80 μm to 800 μm. Therefore, when the terminals of the semiconductor device with terminals are buried in the viscoelastic layer 12 , even terminal electrodes such as solder balls that have unevenness and are prone to float can be buried, so that the terminal formation surface of the target semiconductor device with terminals can be closely contacted with the viscoelastic layer 12 . As a result, electrical short circuit between the terminal electrode and the electromagnetic wave shielding film can be prevented, and there is no need to install complicated shielding parts in the steps.

本實施形態之端子保護用膠帶亦可如圖2之端子保護用膠帶2所示，為依序具有黏著劑層14、嵌埋層13及基材11之構成，亦可於黏彈性層12之黏著劑層14之側之最表層具備剝離膜20。 The terminal protection tape of this embodiment can also be composed of an adhesive layer 14 , an embedding layer 13 and a base material 11 in sequence as shown in the terminal protection tape 2 of FIG. 2 , or it can also have a viscoelastic layer 12 The outermost layer on the side of the adhesive layer 14 is provided with a release film 20 .

圖2所示之端子保護用膠帶2可用於下述步驟：將剝離膜20剝離，將附端子之半導體裝置以端子之側為下而按壓於作為支撐體之基材11上之黏彈性層12，於黏彈性層12埋設端子，進而自該附端子之半導體裝置上形成電磁波屏蔽膜。於黏彈性層12之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層12之厚度為80μm至800μm，故而於將附端子之半導體裝置之端子埋設於黏彈性層12時，即便為焊料球等具有凹凸而容易產生浮起之端子電極亦可埋設，可使作為對象之附端子之半導體裝置之端子形成面密接於黏彈性層12。結果，可防止端子電極與電磁波屏蔽膜電性短路，亦無需設置於步驟上繁雜之遮蔽部等。 The terminal protection tape 2 shown in Figure 2 can be used in the following steps: peel off the release film 20, and press the semiconductor device with terminals against the viscoelastic layer 12 on the base material 11 as the support with the terminal side facing down. , embedding terminals in the viscoelastic layer 12, and then forming an electromagnetic wave shielding film on the semiconductor device with terminals. In the dynamic viscoelasticity measurement of the viscoelastic layer 12, the value of tan δ at 50°C is above 0.2, and the thickness of the viscoelastic layer 12 is 80 μm to 800 μm. Therefore, the terminals of the semiconductor device with terminals are buried in the viscoelastic layer 12. In this case, even terminal electrodes such as solder balls that have unevenness and are prone to float can be buried, so that the terminal formation surface of the target semiconductor device with terminals can be closely contacted with the viscoelastic layer 12 . As a result, electrical short circuit between the terminal electrode and the electromagnetic wave shielding film can be prevented, and there is no need to provide a complicated shielding part in the process.

本實施形態之端子保護用膠帶亦可如圖3之端子保護用膠帶 3所示，為依序具有黏著劑層14、嵌埋層13及基材11之構成，且於黏彈性層12之黏著劑層14之側之最表層具備剝離膜20，亦可於基材11中之與黏彈性層12相反之側具備用以貼合於支撐體之第二黏著劑層15(亦即，貼合黏著劑層)，亦可為於第二黏著劑層15之側之最表層具備剝離膜22之雙面膠帶。 The terminal protection tape of this embodiment can also be the terminal protection tape shown in Figure 3 As shown in 3, it is composed of an adhesive layer 14, an embedded layer 13 and a base material 11 in sequence, and a peeling film 20 is provided on the outermost layer of the viscoelastic layer 12 on the side of the adhesive layer 14. It can also be provided on the base material. The side opposite to the viscoelastic layer 12 in 11 is provided with a second adhesive layer 15 (that is, a bonding adhesive layer) for bonding to the support, or it can also be on the side of the second adhesive layer 15 The outermost layer is a double-sided tape with a release film 22 .

圖3所示之端子保護用膠帶3可用於下述步驟：將剝離膜22剝離，如圖4所示般固定於支撐體30，進而將剝離膜20剝離，將附端子之半導體裝置以端子之側為下而按壓於黏彈性層12，於黏彈性層12埋設端子，進而自該附端子之半導體裝置上形成電磁波屏蔽膜。於黏彈性層12之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層12之厚度為80μm至800μm，故而於將附端子之半導體裝置的端子埋設於黏彈性層12時，即便為焊料球等容易產生浮起之端子電極亦可埋設，可使作為對象之附端子之半導體裝置之端子形成面密接於黏彈性層12。結果，可防止端子電極與電磁波屏蔽膜電性短路，亦無需設置於步驟上繁雜之遮蔽部等。 The terminal protection tape 3 shown in Figure 3 can be used in the following steps: peel off the release film 22, fix it to the support 30 as shown in Figure 4, then peel off the release film 20, and remove the semiconductor device with terminals from the terminals. With the side facing down, the viscoelastic layer 12 is pressed, terminals are embedded in the viscoelastic layer 12, and an electromagnetic wave shielding film is formed on the semiconductor device with terminals. In the dynamic viscoelasticity measurement of the viscoelastic layer 12, the value of tan δ at 50°C is above 0.2, and the thickness of the viscoelastic layer 12 is 80 μm to 800 μm. Therefore, the terminals of the semiconductor device with terminals are buried in the viscoelastic layer 12. In this case, even terminal electrodes that are prone to floating, such as solder balls, can be buried, so that the terminal formation surface of the target semiconductor device with terminals can be brought into close contact with the viscoelastic layer 12 . As a result, electrical short circuit between the terminal electrode and the electromagnetic wave shielding film can be prevented, and there is no need to provide a complicated shielding part in the process.

繼而，對構成本實施形態之端子保護用膠帶之各層進行說明。 Next, each layer constituting the terminal protection tape of this embodiment will be described.

◎黏彈性層 ◎Viscoelastic layer

於本實施形態之端子保護用膠帶中，黏彈性層係用於保護附端子之半導體裝置之端子形成面(換言之為電路面)、及設於該端子形成面上之端子，於黏彈性層之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層之厚度為80μm至800μm。 In the terminal protection tape of this embodiment, the viscoelastic layer is used to protect the terminal forming surface (in other words, the circuit surface) of the semiconductor device with terminals and the terminals provided on the terminal forming surface. In the dynamic viscoelasticity measurement, the value of tan δ at 50°C is above 0.2, and the thickness of the viscoelastic layer is 80 μm to 800 μm.

於黏彈性層之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層之厚度為80μm至800μm，藉此，利用黏彈性層之適度之黏性，即便為焊料球等之容易產生各種形狀、大小浮起之端子電極亦可埋設。另外，黏彈性層較佳為具有嵌埋層及黏著劑層。藉由黏彈性層具有嵌埋層及 黏著劑層，而容易設為上述合適之動態黏彈性，並且，可對端子形成面及端子賦予合適之接著性。 In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50°C is above 0.2, and the thickness of the viscoelastic layer is 80 μm to 800 μm. By taking advantage of the moderate viscosity of the viscoelastic layer, even for solder balls, etc. Terminal electrodes that are prone to floating in various shapes and sizes can also be buried. In addition, the viscoelastic layer preferably has an embedding layer and an adhesive layer. The viscoelastic layer has an embedded layer and The adhesive layer can be easily set to the above-mentioned appropriate dynamic viscoelasticity, and can provide appropriate adhesion to the terminal formation surface and the terminal.

於本說明書中，「於50℃之黏彈性層之tanδ」可將於50℃之黏彈性層之損失彈性模量G”(50℃)除以儲存彈性模量G’(50℃)而獲得。另外，後述的「於25℃之黏彈性層之tanδ」可將於25℃之黏彈性層之損失彈性模量G”(25℃)除以儲存彈性模量G’(25℃)而獲得。 In this specification, "tan δ of the viscoelastic layer at 50°C" can be obtained by dividing the loss elastic modulus G" (50°C) of the viscoelastic layer at 50°C by the storage elastic modulus G' (50°C) . In addition, the "tan δ of the viscoelastic layer at 25°C" mentioned later can be obtained by dividing the loss elastic modulus G" (25°C) of the viscoelastic layer at 25°C by the storage elastic modulus G' (25°C) .

另外，於本說明書中，黏彈性層之「損失彈性模量G”」及「儲存彈性模量G’」可藉由利用剪切黏度測定裝置以頻率：1Hz、升溫速度：10℃/min之測定條件自室溫升溫至100℃，對黏彈性層進行測定而獲得。 In addition, in this specification, the "loss elastic modulus G" and "storage elastic modulus G'" of the viscoelastic layer can be determined by using a shear viscosity measuring device with a frequency of 1 Hz and a heating rate of 10°C/min. The measurement conditions are obtained by heating the viscoelastic layer from room temperature to 100°C.

因此，於黏彈性層之動態黏彈性測定中，於50℃之tanδ之值必須為0.2以上，較佳為0.3以上，更佳為0.5以上。藉由於50℃之tanδ之值為前述下限值以上，而可確保對端子電極之追隨性及黏彈性層之流動性，故而端子電極之埋設性(以下，亦稱為嵌埋性)提高。於50℃之tanδ之值可設為3.5以下，可設為3.0以下，可設為2.5以下。 Therefore, in the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 50° C. must be 0.2 or more, preferably 0.3 or more, and more preferably 0.5 or more. Since the value of tan δ at 50° C. is equal to or higher than the aforementioned lower limit, the followability to the terminal electrode and the fluidity of the viscoelastic layer can be ensured, so the embedding properties of the terminal electrodes (hereinafter also referred to as embedding properties) are improved. The value of tan δ at 50°C can be set to 3.5 or less, to 3.0 or less, or to 2.5 or less.

於50℃之tanδ之上限值與下限值可任意組合。 The upper limit and lower limit of tan δ at 50°C can be combined arbitrarily.

例如，於50℃之tanδ較佳為0.2以上至3.5以下，更佳為0.3以上至3.0以下，進而佳為0.5以上至2.5以下。 For example, tan δ at 50° C. is preferably from 0.2 to 3.5, more preferably from 0.3 to 3.0, further preferably from 0.5 to 2.5.

黏彈性層之厚度必須為80μm至800μm，較佳為100μm至790μm，更佳為130μm至780μm。 The thickness of the viscoelastic layer must be 80 μm to 800 μm, preferably 100 μm to 790 μm, more preferably 130 μm to 780 μm.

藉由黏彈性層之厚度為前述下限值以上，而即便為焊料球等容易產生浮起之端子電極亦可嵌埋。另外，藉由嵌埋層之厚度為前述上限值以下，而抑制端子保護用膠帶成為過剩之厚度。 By setting the thickness of the viscoelastic layer to be above the aforementioned lower limit, even terminal electrodes that are prone to floating, such as solder balls, can be embedded. In addition, since the thickness of the embedding layer is equal to or less than the aforementioned upper limit, the terminal protection tape is suppressed from becoming excessively thick.

此處，所謂「黏彈性層之厚度」，意指黏彈性層整體之厚度，由嵌埋層及黏著劑層之多層所構成之黏彈性層之厚度意指嵌埋層及黏著劑層之合計厚度。 Here, the so-called "thickness of the viscoelastic layer" means the thickness of the entire viscoelastic layer, and the thickness of the viscoelastic layer composed of multiple layers of the embedding layer and the adhesive layer means the total of the embedding layer and the adhesive layer. thickness.

於本說明書中，「層之厚度」能以於隨機選擇之5處測定厚度並平均表示之值之形式，依據JIS(Japanese Industrial Standard；日本工業標準)K77130使用定壓厚度測定器進行測定。 In this specification, the "thickness of a layer" can be measured using a constant pressure thickness measuring device in accordance with JIS (Japanese Industrial Standard; Japanese Industrial Standard) K77130 in the form of measuring the thickness at 5 randomly selected places and averaging the value.

較佳為前述黏彈性層於50℃之儲存彈性模量G’(50℃)(MPa)滿足下述式(1)。 Preferably, the storage elastic modulus G’ (50°C) (MPa) of the viscoelastic layer at 50°C satisfies the following formula (1).

0.01MPa≦G’(50℃)≦15MPa…(1) 0.01MPa≦G’(50℃)≦15MPa…(1)

藉由滿足式(1)，即便為焊料球等之容易產生各種形狀、大小浮起之端子電極亦更容易埋設。 By satisfying equation (1), it is easier to bury even terminal electrodes such as solder balls that are prone to floating in various shapes and sizes.

G’(50℃)較佳為0.01MPa至15MPa，更佳為0.02MPa至12.5MPa，進而佳為0.03MPa至10MPa。 G' (50°C) is preferably 0.01MPa to 15MPa, more preferably 0.02MPa to 12.5MPa, still more preferably 0.03MPa to 10MPa.

前述黏彈性層之厚度d1(μm)較佳為與前述端子之高度h0(μm)之間滿足下述式(2)。 It is preferable that the thickness d1 (μm) of the viscoelastic layer and the height h0 (μm) of the terminal satisfy the following formula (2).

1.2≦d1/h0≦5.0…(2) 1.2≦d1/h0≦5.0…(2)

藉由滿足式(2)，即便為焊料球等之容易產生各種形狀、大小浮起之端子電極亦更容易埋設。 By satisfying equation (2), it is easier to bury even terminal electrodes such as solder balls that are prone to floating in various shapes and sizes.

d1/h0較佳為1.2至5.0，更佳為1.3至5.0，進而佳為1.4至5.0。 d1/h0 is preferably 1.2 to 5.0, more preferably 1.3 to 5.0, further preferably 1.4 to 5.0.

本實施形態之端子保護用膠帶較佳為前述黏彈性層於25℃之儲存彈性模量G’(25℃)(MPa)滿足下述式(3)。 In the terminal protection tape of this embodiment, it is preferable that the storage elastic modulus G’ (25°C) (MPa) of the viscoelastic layer at 25°C satisfies the following formula (3).

0.05MPa≦G’(25℃)≦20MPa…(3) 0.05MPa≦G’(25℃)≦20MPa…(3)

藉由滿足式(3)，而容易保持端子保護用膠帶於常溫之形狀，容易抑制向嵌埋層之端部之滲出。 By satisfying the formula (3), it is easy to maintain the shape of the terminal protection tape at normal temperature, and it is easy to suppress bleeding to the end of the embedded layer.

G’(25℃)較佳為0.05MPa至20MPa，更佳為0.06MPa至15MPa，進而佳為0.07MPa至10MPa。 G' (25°C) is preferably 0.05MPa to 20MPa, more preferably 0.06MPa to 15MPa, still more preferably 0.07MPa to 10MPa.

於黏彈性層之動態黏彈性測定中，於25℃之tanδ之值亦可為0.10至1.4，較佳為0.20至1.0，更佳為0.30至0.8。 In the dynamic viscoelasticity measurement of the viscoelastic layer, the value of tan δ at 25° C. can also be 0.10 to 1.4, preferably 0.20 to 1.0, and more preferably 0.30 to 0.8.

於使附端子之半導體裝置之端子形成面密接於黏彈性層12時，較佳為使附端子之半導體裝置之端子形成面直接密接於黏彈性層12之黏著劑層14。 When the terminal forming surface of the semiconductor device with terminals is in close contact with the viscoelastic layer 12 , it is preferable that the terminal forming surface of the semiconductor device with terminals is directly in close contact with the adhesive layer 14 of the viscoelastic layer 12 .

此時，為了於端子形成面及端子防止殘糊，黏著劑層14較佳為設定得較嵌埋層13更硬。 At this time, in order to prevent residue on the terminal formation surface and terminals, the adhesive layer 14 is preferably set to be harder than the embedding layer 13 .

○嵌埋層 ○Embedded layer

於本實施形態之端子保護用膠帶中，嵌埋層係指黏彈性層中的埋設附端子之半導體裝置之端子而進行保護的層。 In the terminal protection tape of this embodiment, the embedding layer refers to a layer in the viscoelastic layer that buries and protects the terminals of a semiconductor device with terminals.

嵌埋層為片材狀或膜狀，只要滿足前述條件之關係，則該嵌埋層之構成材料並無特別限定。於本說明書中，所謂「片材狀或膜狀」，係指為薄的膜狀且面內之厚度偏差小，具有可撓性者。 The embedded layer is in the form of a sheet or a film, and the material constituting the embedded layer is not particularly limited as long as it satisfies the aforementioned conditions. In this specification, "sheet-like or film-like" means a thin film-like film with small in-plane thickness variation and flexibility.

例如，於覆蓋成為保護對象的附端子之半導體裝置之端子形成面的黏彈性層反映出存在於半導體表面之端子之形狀，由此於為了抑制黏彈性層變形之情形時，作為前述嵌埋層之較佳構成材料，就嵌埋層之貼附性進一步提高之方面而言，可列舉(甲基)丙烯酸胺基甲酸酯樹脂、丙烯酸系樹脂等。 For example, in order to suppress the deformation of the viscoelastic layer by reflecting the shape of the terminals existing on the semiconductor surface, the viscoelastic layer covering the terminal formation surface of the semiconductor device with terminals to be protected is used as the embedding layer. Preferable constituent materials include (meth)acrylic urethane resin, acrylic resin, and the like, in terms of further improving the adhesion of the embedded layer.

嵌埋層可為僅一層(單層)，亦可為兩層以上之多層，於為多層之情形時，該等多層可彼此相同亦可不同，該等多層之組合並無特別限定。 The embedded layer may be only one layer (single layer), or may be multiple layers of two or more. In the case of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

再者，於本說明書中，不限於嵌埋層之情形，所謂「多層可彼此相同亦可不同」，意指「可使所有之層相同，亦可使所有之層不同，亦可僅一部分層相同」，進而所謂「多層互不相同」，意指「各層之構成材料及厚度之至少一者互不相同」。 Furthermore, in this specification, it is not limited to the case of embedded layers. The so-called "multiple layers can be the same or different from each other" means "all the layers can be the same, all the layers can be different, or only some of the layers can be "The same", and furthermore, "multiple layers are different from each other" means "at least one of the constituent materials and thickness of each layer is different from each other."

嵌埋層之厚度可於黏彈性層之厚度成為80μm至800μm之範圍內，根據成為保護對象的附端子之半導體裝置之端子形成面之端子之高度而適當調節，就高度相對較高之端子之影響亦可容易地吸收之方面而言，較佳為50μm至600μm，更佳為70μm至550μm，尤佳為80μm至500μm。藉由嵌埋層之厚度為前述下限值以上，而可形成端子之保護性能更高之黏彈性層。另外，藉由嵌埋層之厚度為前述上限值以下，而生產性及以輥形狀之捲取適性提高。 The thickness of the embedded layer can be in the range of 80 μm to 800 μm, and can be appropriately adjusted according to the height of the terminals on the terminal forming surface of the semiconductor device with terminals to be protected. For terminals with relatively high heights, In terms of easily absorbing the influence, the thickness is preferably from 50 μm to 600 μm, more preferably from 70 μm to 550 μm, and particularly preferably from 80 μm to 500 μm. By setting the thickness of the embedded layer above the aforementioned lower limit, a viscoelastic layer with higher protective performance for the terminal can be formed. In addition, when the thickness of the embedded layer is equal to or less than the aforementioned upper limit, productivity and winding suitability in a roll shape are improved.

此處，所謂「嵌埋層之厚度」，意指嵌埋層整體之厚度，例如所謂由多層所構成之嵌埋層之厚度，意指構成嵌埋層之所有層之合計厚度。 Here, the "thickness of the embedding layer" means the thickness of the entire embedding layer. For example, the thickness of the embedding layer composed of multiple layers means the total thickness of all the layers constituting the embedding layer.

嵌埋層較佳為具有與埋設端子相應的柔軟性質，較佳為較黏著劑層更為柔軟。 The embedded layer preferably has soft properties corresponding to the embedded terminals, and is preferably softer than the adhesive layer.

(嵌埋層形成用組成物) (Composition for forming embedded layer)

嵌埋層可使用含有該嵌埋層之構成材料之嵌埋層形成用組成物而形成。 The embedding layer can be formed using an embedding layer-forming composition containing the constituent material of the embedding layer.

例如，於嵌埋層之形成對象面塗敷嵌埋層形成用組成物，視需要進行乾燥，藉由照射能量線而硬化，藉此可於目標部位形成嵌埋層。另外，於剝離膜塗敷嵌埋層形成用組成物，視需要進行乾燥，藉由照射能量線而硬化，藉此可形成目標厚度之嵌埋層，亦可將嵌埋層轉印至目標部位。嵌埋層之更具體之形成方法將與其他層之形成方法一併於下文中詳細說明。嵌埋層形成用組成物中的於常溫不氣化之成分彼此之含量之比率通常與嵌埋 層之前述成分彼此之含量之比率相同。此處，所謂「常溫」，意指不特別冷或熱之溫度，亦即平常之溫度，例如可列舉15℃至30℃之溫度等。 For example, the embedding layer forming composition can be applied to the surface to be formed of the embedding layer, dried if necessary, and hardened by irradiation with energy rays, whereby the embedding layer can be formed at the target site. In addition, the embedding layer-forming composition is applied to the release film, dried if necessary, and hardened by irradiation with energy rays. This allows the embedding layer to have a target thickness to be formed, and the embedding layer can be transferred to the target site. . A more specific formation method of the embedded layer will be described in detail below along with the formation methods of other layers. The ratio of the contents of the components that do not vaporize at room temperature in the embedding layer forming composition is usually the same as that of the embedding layer. The ratio of the contents of the aforementioned components to each other in the layers is the same. Here, the so-called "normal temperature" means a temperature that is not particularly cold or hot, that is, an ordinary temperature. For example, a temperature of 15°C to 30°C can be cited.

嵌埋層形成用組成物之塗敷只要藉由公知之方法進行即可，例如可列舉：使用氣刀塗佈機、刮刀塗佈機、棒式塗佈機、凹版塗佈機、輥式塗佈機、輥刀塗佈機、簾幕式塗佈機、模頭塗佈機、刀片塗佈機、網版塗佈機、線棒塗佈機、吻合式塗佈機等各種塗佈機之方法。 The coating of the embedded layer forming composition may be carried out by a known method, for example, using an air knife coater, a knife coater, a rod coater, a gravure coater, or a roller coater. Coating machine, roller knife coater, curtain coater, die coater, blade coater, screen coater, wire bar coater, dosing coater and other various coating machines method.

嵌埋層形成用組成物之乾燥條件並無特別限定，嵌埋層形成用組成物於含有後述的溶劑之情形時，較佳為進行加熱乾燥，於該情形時，例如較佳為以70℃至130℃、10秒鐘至5分鐘之條件乾燥。 The drying conditions of the embedding layer-forming composition are not particularly limited. When the embedding layer-forming composition contains a solvent described below, it is preferable to heat-dry it. In this case, it is preferable to dry it at, for example, 70°C. Dry at 130°C for 10 seconds to 5 minutes.

嵌埋層形成用組成物於具有能量線硬化性之情形時，較佳為藉由照射能量線而硬化。 When the composition for forming the embedded layer has energy ray hardenability, it is preferably hardened by irradiation with energy rays.

作為嵌埋層形成用組成物，例如可列舉含有丙烯酸系樹脂之嵌埋層形成用組成物(I)等。 Examples of the embedding layer forming composition include the embedding layer forming composition (I) containing an acrylic resin.

{嵌埋層形成用組成物(I)} {Composition (I) for forming embedded layer}

嵌埋層形成用組成物(I)含有丙烯酸系樹脂。 The embedding layer forming composition (I) contains an acrylic resin.

作為嵌埋層形成用組成物(I)，可將後述的第一黏著劑組成物(I-1)中之含有作為丙烯酸系樹脂之黏著性樹脂(I-1a)及能量線硬化性化合物之組成物、及第一黏著劑組成物(I-2)中之含有於作為丙烯酸系樹脂之黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a)之組成物用作嵌埋層形成用組成物(I)。 As the embedding layer forming composition (I), a first adhesive composition (I-1) to be described later containing an adhesive resin (I-1a) that is an acrylic resin and an energy ray curable compound can be used. The composition, and the energy ray curable adhesive resin (I-1a) containing an unsaturated group introduced into the side chain of the adhesive resin (I-1a) which is an acrylic resin in the first adhesive composition (I-2) The composition of 1-2a) is used as the embedded layer forming composition (I).

嵌埋層形成用組成物(I)中所用之黏著性樹脂(I-1a)及能量線硬化性化合物與後述的第一黏著劑組成物(I-1)中所用之黏著性樹脂(I-1a)及能量線硬化性化合物之說明相同。 The adhesive resin (I-1a) and energy ray curable compound used in the embedded layer forming composition (I) and the adhesive resin (I-) used in the first adhesive composition (I-1) described below 1a) is the same as the explanation for the energy ray curable compound.

嵌埋層形成用組成物(I)中所用之黏著性樹脂(I-2a)與後述的第一黏著劑組成物(I-2)中所用之黏著性樹脂(I-2a)之說明相同。 The description of the adhesive resin (I-2a) used in the embedded layer forming composition (I) is the same as that of the adhesive resin (I-2a) used in the first adhesive composition (I-2) described below.

嵌埋層形成用組成物(I)較佳為進而含有交聯劑。嵌埋層形成用組成物(I)中所用之交聯劑與後述的第一黏著劑組成物(I-1)、第一黏著劑組成物(I-2)中所用之交聯劑之說明相同。 The embedding layer forming composition (I) preferably further contains a crosslinking agent. Description of the cross-linking agent used in the embedded layer forming composition (I) and the cross-linking agent used in the first adhesive composition (I-1) and first adhesive composition (I-2) described below same.

嵌埋層形成用組成物(I)亦可進而含有光聚合起始劑、其他添加劑。嵌埋層形成用組成物(I)中所用之光聚合起始劑、其他添加劑與後述的第一黏著劑組成物(I-1)、第一黏著劑組成物(I-2)中所用之光聚合起始劑、其他添加劑之說明相同。 The embedded layer forming composition (I) may further contain a photopolymerization initiator and other additives. The photopolymerization initiator and other additives used in the embedded layer forming composition (I) and the first adhesive composition (I-1) and first adhesive composition (I-2) described below The descriptions of photopolymerization initiator and other additives are the same.

嵌埋層形成用組成物(I)亦可含有溶劑。嵌埋層形成用組成物(I)中所用之溶劑與後述的第一黏著劑組成物(I-1)、第一黏著劑組成物(I-2)中所用之溶劑之說明相同。 The embedding layer forming composition (I) may contain a solvent. The solvent used in the embedded layer forming composition (I) is the same as the solvent used in the first adhesive composition (I-1) and the first adhesive composition (I-2) described later.

藉由調整嵌埋層形成用組成物(I)中黏著性樹脂(I-1a)之分子量及能量線硬化性化合物之分子量中的任一者或兩者，而能以嵌埋層具有與埋設端子相應的柔軟性質之方式設計。 By adjusting either or both the molecular weight of the adhesive resin (I-1a) and the molecular weight of the energy ray curable compound in the embedding layer forming composition (I), the embedding layer can have and embed The terminals are designed in a manner corresponding to their soft nature.

另外，藉由調整嵌埋層形成用組成物(I)中交聯劑之含量，而能以嵌埋層具有與埋設端子相應的柔軟性質之方式設計。 In addition, by adjusting the content of the crosslinking agent in the embedding layer forming composition (I), the embedding layer can be designed to have soft properties corresponding to the embedded terminals.

<<嵌埋層形成用組成物的製造方法>> <<Production method of composition for forming embedded layer>>

嵌埋層形成用組成物(I)等嵌埋層形成用組成物係藉由將用以構成該嵌埋層形成用組成物之各成分調配而獲得。 Compositions for forming an embedded layer such as the composition for forming an embedded layer (I) are obtained by blending the respective components constituting the composition for forming an embedded layer.

調配各成分時之添加順序並無特別限定，亦可同時添加兩種以上之成分。 The order in which the ingredients are added is not particularly limited, and two or more ingredients may be added at the same time.

於使用溶劑之情形時，可藉由將溶劑與溶劑以外之任一調配成分混合將該調配成分預先稀釋而使用，亦可不將溶劑以外之任一調配成分預先稀釋，而藉由將溶劑與該等調配成分混合而使用。 When a solvent is used, the solvent may be mixed with any preparation component other than the solvent to dilute the preparation component in advance before use, or the solvent may not be pre-diluted with any preparation component other than the solvent, and the solvent may be mixed with the preparation component. Mix the ingredients before use.

於調配時混合各成分之方法並無特別限定，只要自下述方法中適當選擇即可：使攪拌子或攪拌翼等旋轉而進行混合之方法；使用混合器進行混合之方法；施加超音波進行混合之方法等公知之方法。 The method of mixing each component during preparation is not particularly limited, as long as it is appropriately selected from the following methods: mixing by rotating a stirrer or stirring blade, mixing with a mixer, or applying ultrasonic waves. Mixing methods and other well-known methods.

各成分之添加及混合時之溫度以及時間只要各調配成分不劣化則並無特別限定，適當調節即可，溫度較佳為15℃至30℃。 The temperature and time for adding and mixing each component are not particularly limited as long as the components are not deteriorated and can be adjusted appropriately. The temperature is preferably 15°C to 30°C.

{嵌埋層之組成} {Composition of embedded layer}

本實施形態中之嵌埋層之組成係自上述嵌埋層形成用組成物(I)中去掉溶劑而成。 The composition of the embedded layer in this embodiment is obtained by removing the solvent from the above-mentioned embedded layer forming composition (I).

於嵌埋層形成用組成物(I)為後述的第一黏著劑組成物(I-1)中之含有作為丙烯酸系樹脂之黏著性樹脂(I-1a)及能量線硬化性化合物之組成物之情形時的嵌埋層(1)中，作為丙烯酸系樹脂之黏著性樹脂(I-1a)相對於嵌埋層(1)之總質量的含有比率較佳為50質量%至99質量%，更佳為55質量%至95質量%，進而佳為60質量%至90質量%。作為本發明之另一方面，作為丙烯酸系樹脂之黏著性樹脂(I-1a)相對於嵌埋層(1)之總質量的含有比率亦可為45質量%至90質量%，亦可為50質量%至85質量%。另外，能量線硬化性化合物相對於嵌埋層(1)之總質量的含有比率較佳為0.5質量%至50質量%，進而佳為5質量%至45質量%。於嵌埋層(1)含有交聯劑之情形時，交聯劑相對於嵌埋層(1)之總質量的含有比率較佳為0.1質量%至10質量%，更佳為0.2質量%至9質量%，進而佳為0.3質量%至8質量%。 The embedded layer forming composition (I) is a composition containing an adhesive resin (I-1a) that is an acrylic resin and an energy ray curable compound in a first adhesive composition (I-1) described below. In the case of the embedding layer (1), the content ratio of the adhesive resin (I-1a) which is an acrylic resin relative to the total mass of the embedding layer (1) is preferably 50 mass % to 99 mass %. More preferably, it is 55 mass % to 95 mass %, and still more preferably 60 mass % to 90 mass %. As another aspect of the present invention, the content ratio of the adhesive resin (I-1a) as the acrylic resin relative to the total mass of the embedding layer (1) may be 45 mass % to 90 mass %, or 50 mass %. mass% to 85 mass%. In addition, the content ratio of the energy ray curable compound relative to the total mass of the embedding layer (1) is preferably 0.5 mass% to 50 mass%, and more preferably 5 mass% to 45 mass%. When the embedding layer (1) contains a cross-linking agent, the content ratio of the cross-linking agent relative to the total mass of the embedding layer (1) is preferably 0.1 mass % to 10 mass %, more preferably 0.2 mass % to 9% by mass, more preferably 0.3% by mass to 8% by mass.

於嵌埋層形成用組成物(1)為含有於作為丙烯酸系樹脂之黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a) 之組成物之情形時的嵌埋層(2)中，於側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a)相對於嵌埋層之總質量的含有比率較佳為10質量%至70質量%，更佳為15質量%至65質量%，進而佳為20質量%至60質量%。於嵌埋層(2)含有交聯劑之情形時，交聯劑相對於嵌埋層(2)之總質量的含有比率較佳為0.1質量%至10質量%，更佳為0.2質量%至9質量%，進而佳為0.3質量%至8質量%。本實施形態之嵌埋層(2)亦可進而含有作為前述丙烯酸系樹脂之黏著性樹脂(I-1a)。於該情形時，作為丙烯酸系樹脂之黏著性樹脂(I-1a)相對於嵌埋層(2)之總質量的含有比率較佳為45質量%至95質量%，更佳為50質量%至90質量%，進而佳為55質量%至85質量%。另外，作為本發明之另一方面，作為丙烯酸系樹脂之黏著性樹脂(I-1a)相對於嵌埋層(2)之總質量的含有比率亦可為25質量%至80質量%，亦可為30質量%至75質量%，亦可為35質量%至70質量%。另外，於本實施形態之嵌埋層(2)進而含有作為前述丙烯酸系樹脂之黏著性樹脂(I-1a)之情形時，前述黏著性樹脂(1-1a)相對於前述黏著性樹脂(1-2a)100質量份的含量較佳為100質量份至200質量份，更佳為110質量份至180質量份，進而佳為120質量份至170質量份。 The embedding layer forming composition (1) is an energy-beam curable adhesive resin (1-2a) in which an unsaturated group is introduced into the side chain of an acrylic resin adhesive resin (I-1a). In the case of the composition, the content ratio of the energy-ray curable adhesive resin (1-2a) having unsaturated groups introduced into the side chains of the embedded layer (2) relative to the total mass of the embedded layer is preferably The content is 10 mass% to 70 mass%, more preferably 15 mass% to 65 mass%, and still more preferably 20 mass% to 60 mass%. When the embedding layer (2) contains a cross-linking agent, the content ratio of the cross-linking agent relative to the total mass of the embedding layer (2) is preferably 0.1 mass % to 10 mass %, more preferably 0.2 mass % to 9% by mass, more preferably 0.3% by mass to 8% by mass. The embedding layer (2) of this embodiment may further contain the adhesive resin (I-1a) as the acrylic resin. In this case, the content ratio of the adhesive resin (I-1a) as the acrylic resin relative to the total mass of the embedding layer (2) is preferably 45 to 95 mass %, more preferably 50 to 95 mass %. 90% by mass, more preferably 55% by mass to 85% by mass. In addition, as another aspect of the present invention, the content ratio of the adhesive resin (I-1a) as the acrylic resin relative to the total mass of the embedding layer (2) may be 25% by mass to 80% by mass, or may be It is 30 mass % to 75 mass %, and may be 35 mass % to 70 mass %. In addition, when the embedding layer (2) of this embodiment further contains the adhesive resin (I-1a) as the acrylic resin, the adhesive resin (1-1a) is smaller than the adhesive resin (1-1a). The content of 100 parts by mass of -2a) is preferably 100 to 200 parts by mass, more preferably 110 to 180 parts by mass, and further preferably 120 to 170 parts by mass.

關於嵌埋層(1)所含的作為丙烯酸系樹脂之黏著性樹脂(I-1a)、能量線硬化性化合物、嵌埋層(2)所含的於黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a)之組成等，亦可與後述的第一黏著劑組成物(I-1)中所用之作為丙烯酸系樹脂之黏著性樹脂(I-1a)、能量線硬化性化合物、於黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a)之說明相同。 About the adhesive resin (I-1a) which is an acrylic resin contained in the embedding layer (1), the energy ray curable compound, and the side of the adhesive resin (I-1a) contained in the embedding layer (2) The composition of the energy-beam curable adhesive resin (1-2a) in which unsaturated groups are introduced into the chain can also be used as an adhesive with the acrylic resin used in the first adhesive composition (I-1) described later. The descriptions of the resin (I-1a), the energy ray curable compound, and the energy ray curable adhesive resin (1-2a) in which an unsaturated group is introduced into the side chain of the adhesive resin (I-1a) are the same.

於本實施形態中，較佳為含有黏著性樹脂(1-2a)、黏著性樹脂(1-1a)及交聯劑之嵌埋層(2)。於該情形時，黏著性樹脂(1-1a)較佳為具有源自(甲基)丙烯酸烷基酯之結構單元、及源自含羧基之單體之單元的丙烯 酸系聚合物。另外，黏著性樹脂(1-2a)較佳為使具有異氰酸酯基及能量線聚合性不飽和基之含不飽和基之化合物，與具有源自(甲基)丙烯酸烷基酯之結構單元、及源自含羥基之單體之單元的丙烯酸系聚合物反應而獲得的丙烯酸系聚合物。交聯劑可使用後述的第一黏著劑組成物(I-1)中例示之化合物，尤佳為使用甲苯二異氰酸酯。 In this embodiment, the embedding layer (2) containing adhesive resin (1-2a), adhesive resin (1-1a) and cross-linking agent is preferred. In this case, the adhesive resin (1-1a) is preferably propylene having a structural unit derived from an alkyl (meth)acrylate and a unit derived from a carboxyl group-containing monomer. Acid polymer. In addition, the adhesive resin (1-2a) is preferably an unsaturated group-containing compound having an isocyanate group and an energy-ray polymerizable unsaturated group, and a structural unit derived from an alkyl (meth)acrylate, and Acrylic polymer obtained by reacting an acrylic polymer with units derived from hydroxyl-containing monomers. As the cross-linking agent, compounds exemplified in the first adhesive composition (I-1) described below can be used, and toluene diisocyanate is particularly preferred.

源自(甲基)丙烯酸烷基酯之結構單元相對於黏著性樹脂(1-1a)之總質量的含有比率較佳為75質量%至99質量%，更佳為80質量%至98質量%，進而佳為85質量%至97質量%。作為本發明之另一方面，源自(甲基)丙烯酸烷基酯之結構單元相對於黏著性樹脂(1-1a)之總質量的含有比率亦可為70質量%至95質量%，亦可為80質量%至95質量%。含羧基之單體之結構單元相對於黏著性樹脂(1-1a)之總質量的含有比率較佳為1.0質量%至30質量%，更佳為2.0質量%至25質量%，進而佳為3.0質量%至20質量%。作為本發明之另一方面，含羧基之單體之結構單元相對於黏著性樹脂(1-1a)之總質量的含有比率亦可為3.0質量%至20質量%，亦可為5.0質量%至15質量%。黏著性樹脂(1-1a)中之(甲基)丙烯酸烷基酯較佳為烷基之碳數為4至12，更佳為4至8。另外，於黏著性樹脂(1-1a)中，較佳為丙烯酸烷基酯。其中，前述(甲基)丙烯酸烷基酯尤佳為丙烯酸正丁酯。另外，作為黏著性樹脂(1-1a)中之含羧基之單體，可列舉乙烯性不飽和單羧酸、乙烯性不飽和二羧酸、乙烯性不飽和二羧酸之酸酐，其中較佳為乙烯性不飽和單羧酸，更佳為(甲基)丙烯酸，尤佳為丙烯酸。 The content ratio of the structural unit derived from alkyl (meth)acrylate relative to the total mass of the adhesive resin (1-1a) is preferably 75 mass % to 99 mass %, more preferably 80 mass % to 98 mass % , more preferably 85 mass% to 97 mass%. As another aspect of the present invention, the content ratio of the structural unit derived from the alkyl (meth)acrylate relative to the total mass of the adhesive resin (1-1a) may be 70% by mass to 95% by mass, or may be It is 80 mass % to 95 mass %. The content ratio of the structural unit of the carboxyl group-containing monomer relative to the total mass of the adhesive resin (1-1a) is preferably 1.0 mass% to 30 mass%, more preferably 2.0 mass% to 25 mass%, and still more preferably 3.0 mass% to 20 mass%. As another aspect of the present invention, the content ratio of the structural unit of the carboxyl group-containing monomer relative to the total mass of the adhesive resin (1-1a) may be 3.0% by mass to 20% by mass, or may be 5.0% by mass to 5.0% by mass. 15% by mass. The alkyl (meth)acrylate in the adhesive resin (1-1a) preferably has a carbon number of 4 to 12 in the alkyl group, more preferably 4 to 8. In addition, among the adhesive resins (1-1a), alkyl acrylate is preferred. Among them, the alkyl (meth)acrylate is particularly preferably n-butyl acrylate. Examples of the carboxyl group-containing monomer in the adhesive resin (1-1a) include ethylenically unsaturated monocarboxylic acid, ethylenically unsaturated dicarboxylic acid, and anhydride of ethylenically unsaturated dicarboxylic acid, among which the preferred ones are It is ethylenically unsaturated monocarboxylic acid, more preferably (meth)acrylic acid, especially acrylic acid.

本實施形態之黏著性樹脂(1-1a)之重量平均分子量較佳為100,000至800,000，更佳為150,000至700,000，進而佳為200,000至600,000。 The weight average molecular weight of the adhesive resin (1-1a) of this embodiment is preferably 100,000 to 800,000, more preferably 150,000 to 700,000, and even more preferably 200,000 to 600,000.

再者，於本說明書中，所謂「重量平均分子量」，只要無特別說明，則為藉由GPC(Gel Permeation Chromatography；凝膠滲透層析)法測定之聚苯乙烯換算值。 In addition, in this specification, the so-called "weight average molecular weight" is a polystyrene-converted value measured by GPC (Gel Permeation Chromatography) method unless otherwise specified.

源自(甲基)丙烯酸烷基酯之結構單元相對於黏著性樹脂(1-2a)之總質量的含有比率較佳為1.0質量%至95質量%，更佳為2.0質量%至90質量%，進而佳為3.0質量%至85質量%。源自含羥基之單體之單元相對於黏著性樹脂(1-2a)之總質量的含有比率較佳為1.0質量%至50質量%，更佳為2.0質量%至45質量%，進而佳為3.0質量%至40質量%。黏著性樹脂(1-2a)中之(甲基)丙烯酸烷基酯較佳為烷基之碳數為1至12，更佳為1至4。黏著性樹脂(1-2a)較佳為具有兩種以上之源自(甲基)丙烯酸烷基酯之結構單元，更佳為具有源自(甲基)丙烯酸甲酯及(甲基)丙烯酸正丁酯之結構單元，進而佳為具有源自甲基丙烯酸甲酯及丙烯酸正丁酯之結構單元。作為黏著性樹脂(1-2a)中之含羥基之單體，可使用後述的第一黏著劑組成物(I-1)中例示者，尤佳為使用丙烯酸2-羥基乙酯。作為具有異氰酸酯基及能量線聚合性不飽和基之含不飽和基之化合物，可使用後述的第一黏著劑組成物(I-2)中例示之化合物，尤佳為使用2-甲基丙烯醯氧基乙基異氰酸酯。將源自前述含羥基之單體的總羥基設為100mol時的前述具有異氰酸酯基及能量線聚合性不飽和基之含不飽和基之化合物之使用量較佳為10mol至150mol，更佳為20mol至140mol，進而佳為30mol至130mol。 The content ratio of the structural unit derived from alkyl (meth)acrylate relative to the total mass of the adhesive resin (1-2a) is preferably 1.0 mass% to 95 mass%, more preferably 2.0 mass% to 90 mass% , and more preferably 3.0 mass% to 85 mass%. The content ratio of the unit derived from the hydroxyl-containing monomer relative to the total mass of the adhesive resin (1-2a) is preferably 1.0 mass% to 50 mass%, more preferably 2.0 mass% to 45 mass%, and still more preferably 3.0% by mass to 40% by mass. The alkyl (meth)acrylate in the adhesive resin (1-2a) preferably has a carbon number of 1 to 12 in the alkyl group, more preferably 1 to 4. The adhesive resin (1-2a) preferably has two or more structural units derived from alkyl (meth)acrylate, and more preferably has a structural unit derived from methyl (meth)acrylate and n-(meth)acrylic acid. The structural unit of butyl ester is more preferably a structural unit derived from methyl methacrylate and n-butyl acrylate. As the hydroxyl group-containing monomer in the adhesive resin (1-2a), those exemplified in the first adhesive composition (I-1) described later can be used, and 2-hydroxyethyl acrylate is particularly preferably used. As the unsaturated group-containing compound having an isocyanate group and an energy-beam polymerizable unsaturated group, compounds exemplified in the first adhesive composition (I-2) described below can be used, and 2-methacrylamide is particularly preferred. Oxyethyl isocyanate. When the total hydroxyl group derived from the hydroxyl-containing monomer is 100 mol, the usage amount of the unsaturated group-containing compound having an isocyanate group and an energy beam polymerizable unsaturated group is preferably 10 mol to 150 mol, more preferably 20 mol. to 140 mol, more preferably 30 mol to 130 mol.

本實施形態之黏著性樹脂(1-2a)之重量平均分子量較佳為10,000至500,000，更佳為20,000至400,000，進而佳為30,000至300,000。 The weight average molecular weight of the adhesive resin (1-2a) of this embodiment is preferably 10,000 to 500,000, more preferably 20,000 to 400,000, and even more preferably 30,000 to 300,000.

○黏著劑層 ○Adhesive layer

以下，有時將構成黏彈性層的黏著劑層與後述的用以貼合於支撐體的第二黏著劑層相區分而稱為「第一黏著劑層」。 Hereinafter, the adhesive layer constituting the viscoelastic layer and the second adhesive layer for bonding to the support described below may be distinguished and referred to as the "first adhesive layer".

第一黏著劑層為片材狀或膜狀，含有黏著劑。 The first adhesive layer is in the form of a sheet or film and contains an adhesive.

作為前述黏著劑，例如可列舉：丙烯酸系樹脂(由具有(甲基)丙烯醯基之樹脂所構成之黏著劑)、胺基甲酸酯系樹脂(由具有胺基甲酸酯鍵之樹脂所構成之黏著劑)、橡膠系樹脂(由具有橡膠結構之樹脂所構成之黏著劑)、聚矽氧系樹脂(由具有矽氧烷鍵之樹脂所構成之黏著劑)、環氧系樹脂(由具有環氧基之樹脂所構成之黏著劑)、聚乙烯醚、聚碳酸酯等黏著性樹脂，較佳為丙烯酸系樹脂。 Examples of the adhesive include acrylic resins (adhesives composed of resins having (meth)acrylyl groups) and urethane resins (adhesives composed of resins having urethane bonds). Adhesives composed of resins), rubber resins (adhesives composed of resins with rubber structures), polysilicone resins (adhesives composed of resins with siloxane bonds), epoxy resins (adhesives composed of resins with siloxane bonds) Adhesive resins composed of resins with epoxy groups), polyvinyl ether, polycarbonate and other adhesive resins are preferably acrylic resins.

再者，於本發明中，所謂「黏著性樹脂」，為包含具有黏著性之樹脂與具有接著性之樹脂兩者的概念，例如，不僅為樹脂自身具有黏著性者，而且亦包含藉由與添加劑等其他成分併用而顯示黏著性之樹脂、或藉由熱或水等觸發因素之存在而顯示接著性之樹脂等。 Furthermore, in the present invention, the so-called "adhesive resin" is a concept that includes both resins with adhesive properties and resins with adhesiveness. For example, not only resins that have adhesive properties by themselves, but also resins with adhesive properties are included. Resin that exhibits adhesiveness by using other ingredients such as additives, or resin that exhibits adhesiveness by the presence of trigger factors such as heat or water.

第一黏著劑層可為僅一層(單層)，亦可為兩層以上之多層，於為多層之情形時，該等多層可彼此相同亦可不同，該等多層之組合並無特別限定。 The first adhesive layer may be only one layer (single layer), or may be multiple layers of two or more. In the case of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

第一黏著劑層之厚度較佳為1μm至800μm，更佳為2μm至100μm，尤佳為8μm至20μm。 The thickness of the first adhesive layer is preferably 1 μm to 800 μm, more preferably 2 μm to 100 μm, especially 8 μm to 20 μm.

此處，所謂「第一黏著劑層之厚度」，意指第一黏著劑層整體之厚度，例如所謂由多層所構成之第一黏著劑層之厚度，意指構成第一黏著劑層之所有層之合計厚度。 Here, the so-called "thickness of the first adhesive layer" means the thickness of the entire first adhesive layer. For example, the so-called thickness of the first adhesive layer composed of multiple layers means all the components constituting the first adhesive layer. The total thickness of the layers.

第一黏著劑層可使用能量線硬化性黏著劑而形成，亦可使用非能量線硬化性黏著劑而形成。使用能量線硬化性黏著劑而形成之第一黏著劑層係可容易地調節硬化前及硬化後之物性。 The first adhesive layer can be formed using an energy ray curable adhesive or a non-energy ray curable adhesive. The first adhesive layer formed using an energy ray curable adhesive can easily adjust the physical properties before and after curing.

於本發明中，所謂「能量線」，意指電磁波或帶電粒子束中具有能量量子者，作為該能量線之例，可列舉紫外線、電子束等。 In the present invention, "energy rays" mean electromagnetic waves or charged particle beams that have energy quanta. Examples of such energy rays include ultraviolet rays and electron beams.

紫外線例如可藉由使用高壓水銀燈、融合H燈(Fusion H lamp)或氙燈等作為紫外線源而照射。電子束可照射藉由電子束加速器等而產生者。 Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a Fusion H lamp, a xenon lamp, or the like as an ultraviolet source. Electron beam irradiation can be generated by an electron beam accelerator or the like.

於本發明中，所謂「能量線硬化性」，意指藉由照射能量線而硬化之性質，所謂「非能量線硬化性」，意指即便照射能量線亦不硬化之性質。 In the present invention, "energy ray hardenability" means the property of being hardened by irradiation with energy rays, and "non-energy ray hardenability" means the property of not being hardened even if energy rays are irradiated.

{{第一黏著劑組成物}} {{First adhesive composition}}

第一黏著劑層可使用含有黏著劑之第一黏著劑組成物而形成。例如，於第一黏著劑層之形成對象面塗敷第一黏著劑組成物，視需要進行乾燥，藉此可於目標部位形成第一黏著劑層。另外，於剝離膜塗敷第一黏著劑組成物，視需要進行乾燥，藉此可形成目標厚度之第一黏著劑層，亦可將第一黏著劑層轉印至目標部位。第一黏著劑層之更具體之形成方法將與其他層之形成方法一併於下文中詳細說明。第一黏著劑組成物中的於常溫不氣化之成分彼此之含量之比率通常與第一黏著劑層之前述成分彼此之含量之比率相同。再者，於本實施形態中，所謂「常溫」，意指不特別冷或熱之溫度，亦即平常之溫度，例如可列舉15℃至25℃之溫度等。 The first adhesive layer can be formed using a first adhesive composition containing an adhesive. For example, the first adhesive composition can be applied to the surface to be formed of the first adhesive layer and dried if necessary, thereby forming the first adhesive layer at the target site. In addition, the first adhesive composition is applied to the release film and dried if necessary, thereby forming a first adhesive layer with a target thickness and transferring the first adhesive layer to a target site. A more specific formation method of the first adhesive layer will be described in detail below together with the formation methods of other layers. The ratio of the contents of the components that do not vaporize at normal temperature in the first adhesive composition to each other is usually the same as the ratio of the contents of the aforementioned components to each other in the first adhesive layer. In addition, in this embodiment, "normal temperature" means a temperature that is not particularly cold or hot, that is, an ordinary temperature. Examples thereof include a temperature of 15°C to 25°C.

第一黏著劑組成物之塗敷只要藉由公知之方法進行即可，例如可列舉：使用氣刀塗佈機、刮刀塗佈機、棒式塗佈機、凹版塗佈機、輥式塗佈機、輥刀塗佈機、簾幕式塗佈機、模頭塗佈機、刀片塗佈機、網版塗佈機、線棒塗佈機、吻合式塗佈機等各種塗佈機之方法。 Coating of the first adhesive composition can be carried out by a known method, for example: using an air knife coater, a blade coater, a rod coater, a gravure coater, and a roller coater. Machines, roller knife coaters, curtain coaters, die coaters, blade coaters, screen coaters, wire rod coaters, dosing coaters and other coating machine methods .

第一黏著劑組成物之乾燥條件並無特別限定，第一黏著劑組成物於含有後述的溶劑之情形時，較佳為進行加熱乾燥，於該情形時，例如較佳為以70℃至130℃、10秒鐘至5分鐘之條件進行乾燥。 The drying conditions of the first adhesive composition are not particularly limited. When the first adhesive composition contains a solvent described later, it is preferably heated and dried. In this case, for example, it is preferably dried at 70°C to 130°C. ℃, 10 seconds to 5 minutes for drying.

於第一黏著劑層為能量線硬化性之情形時，作為含有能量線硬化性黏著劑之第一黏著劑組成物，亦即能量線硬化性之第一黏著劑組成物，例如可列舉：含有非能量線硬化性之黏著性樹脂(I-1a)(以下有時簡稱 為「黏著性樹脂(I-1a)」)及能量線硬化性化合物之第一黏著劑組成物(I-1)；含有於非能量線硬化性之黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(I-2a)(以下有時簡稱為「黏著性樹脂(I-2a)」)之第一黏著劑組成物(I-2)；含有前述黏著性樹脂(I-2a)及能量線硬化性低分子化合物之第一黏著劑組成物(I-3)等。 When the first adhesive layer is energy ray curable, the first adhesive composition containing the energy ray curable adhesive, that is, the energy ray curable first adhesive composition, may include, for example: Non-energy ray curable adhesive resin (I-1a) (hereinafter sometimes referred to as The first adhesive composition (I-1) which is "adhesive resin (I-1a)") and an energy ray curable compound; contained in the side chain of the non-energy ray curable adhesive resin (I-1a) A first adhesive composition (I-2) into which an energy-beam-curable adhesive resin (I-2a) (hereinafter sometimes referred to as "adhesive resin (I-2a)") into which unsaturated groups are introduced; contains The aforementioned adhesive resin (I-2a) and the first adhesive composition (I-3) of the energy ray curable low molecular compound, etc.

{第一黏著劑組成物(I-1)} {First adhesive composition (I-1)}

第一黏著劑組成物(I-1)如上所述，含有非能量線硬化性之黏著性樹脂(I-1a)及能量線硬化性化合物。 As mentioned above, the first adhesive composition (I-1) contains a non-energy ray curable adhesive resin (I-1a) and an energy ray curable compound.

(黏著性樹脂(I-1a)) (Adhesive resin (I-1a))

前述黏著性樹脂(I-1a)較佳為丙烯酸系樹脂。 The adhesive resin (I-1a) is preferably an acrylic resin.

作為前述丙烯酸系樹脂，例如可列舉至少具有源自(甲基)丙烯酸烷基酯之結構單元之丙烯酸系聚合物。 Examples of the acrylic resin include an acrylic polymer having at least a structural unit derived from an alkyl (meth)acrylate.

前述丙烯酸系樹脂所具有之結構單元可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The acrylic resin may have only one type of structural unit, or may have two or more types of structural units. In the case of two or more types, the combination and ratio of these units may be selected arbitrarily.

作為前述(甲基)丙烯酸烷基酯，例如可列舉構成烷基酯之烷基之碳數為1至20者，前述烷基較佳為直鏈狀或支鏈狀。 Examples of the alkyl (meth)acrylate include those in which the alkyl group constituting the alkyl ester has 1 to 20 carbon atoms. The alkyl group is preferably linear or branched.

作為(甲基)丙烯酸烷基酯，更具體而言可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸二級丁酯、(甲基)丙烯酸三級丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯(亦稱為(甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯(亦稱為(甲基)丙烯酸肉豆蔻 酯)、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯(亦稱為(甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯(亦稱為(甲基)丙烯酸硬脂酯)、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等。 More specifically, the (meth)acrylic acid alkyl esters include: (meth)acrylic acid methyl ester, (meth)acrylic acid ethyl ester, (meth)acrylic acid n-propyl ester, (meth)acrylic acid isopropyl ester , n-butyl (meth)acrylate, isobutyl (meth)acrylate, secondary butyl (meth)acrylate, tertiary butyl (meth)acrylate, amyl (meth)acrylate, (meth)acrylate )Hexyl acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate Ester, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (also known as lauryl (meth)acrylate ester), tridecyl (meth)acrylate, myristyl (meth)acrylate (also known as myristyl (meth)acrylate ester), pentadecyl (meth)acrylate, cetyl (meth)acrylate (also known as palmityl (meth)acrylate), heptadecyl (meth)acrylate, (meth)acrylate stearyl (meth)acrylate (also known as stearyl (meth)acrylate), nonadecyl (meth)acrylate, eicosanyl (meth)acrylate, etc.

就第一黏著劑層之黏著力提高之方面而言，前述丙烯酸系聚合物較佳為具有源自前述烷基之碳數為4以上的(甲基)丙烯酸烷基酯之結構單元。而且，就第一黏著劑層之黏著力進一步提高之方面而言，前述烷基之碳數較佳為4至12，更佳為4至8。另外，前述烷基之碳數為4以上的(甲基)丙烯酸烷基酯較佳為丙烯酸烷基酯。 In order to improve the adhesive force of the first adhesive layer, the acrylic polymer preferably has a structural unit derived from an alkyl (meth)acrylate having a carbon number of 4 or more in the alkyl group. Furthermore, in order to further improve the adhesive force of the first adhesive layer, the carbon number of the alkyl group is preferably 4 to 12, and more preferably 4 to 8. In addition, the (meth)acrylic acid alkyl ester having a carbon number of 4 or more in the alkyl group is preferably an acrylic acid alkyl ester.

前述丙烯酸系聚合物較佳為除了源自(甲基)丙烯酸烷基酯之結構單元以外，進而具有源自含官能基之單體之結構單元。 The acrylic polymer preferably has a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from alkyl (meth)acrylate.

作為前述含官能基之單體，例如可列舉：藉由前述官能基與後述的交聯劑反應而成為交聯之起點，或藉由前述官能基與含不飽和基之化合物中之不飽和基反應而可於丙烯酸系聚合物之側鏈導入不飽和基者。 Examples of the functional group-containing monomer include: the functional group reacts with a cross-linking agent to be described later to become a starting point for cross-linking; or the functional group reacts with an unsaturated group in a compound containing an unsaturated group. Reaction can introduce unsaturated groups into the side chains of acrylic polymers.

作為含官能基之單體中之前述官能基，例如可列舉：羥基、羧基、胺基、環氧基等。 Examples of the functional group in the functional group-containing monomer include hydroxyl group, carboxyl group, amino group, epoxy group, and the like.

亦即，作為含官能基之單體，例如可列舉：含羥基之單體、含羧基之單體、含胺基之單體、含環氧基之單體等。 That is, examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amine group-containing monomer, an epoxy group-containing monomer, and the like.

作為前述含羥基之單體，例如可列舉：(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等(甲基)丙烯酸羥基烷基酯；乙烯醇、烯丙醇等非(甲基)丙烯酸系不飽和醇(亦即，不具有(甲基)丙烯醯基骨架之不飽和醇)等。 Examples of the hydroxyl-containing monomer include: (meth)acrylic acid hydroxymethyl ester, (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 3- Hydroxyalkyl (meth)acrylate, such as hydroxypropyl ester, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, etc.; vinyl alcohol, Non-(meth)acrylic unsaturated alcohols such as allyl alcohol (that is, unsaturated alcohols that do not have a (meth)acrylyl skeleton), etc.

作為前述含羧基之單體，例如可列舉：(甲基)丙烯酸、丁烯 酸等乙烯性不飽和單羧酸(具有乙烯性不飽和鍵之單羧酸)；富馬酸、衣康酸、馬來酸、檸康酸等乙烯性不飽和二羧酸(具有乙烯性不飽和鍵之二羧酸)；前述乙烯性不飽和二羧酸之酸酐；甲基丙烯酸2-羧基乙酯等(甲基)丙烯酸羧基烷基酯等。 Examples of the carboxyl group-containing monomer include: (meth)acrylic acid, butene Acids and other ethylenically unsaturated monocarboxylic acids (monocarboxylic acids with ethylenically unsaturated bonds); fumaric acid, itaconic acid, maleic acid, citraconic acid and other ethylenically unsaturated dicarboxylic acids (with ethylenically unsaturated bonds) Saturated dicarboxylic acid); anhydride of the aforementioned ethylenically unsaturated dicarboxylic acid; (meth)acrylic acid carboxyalkyl esters such as 2-carboxyethyl methacrylate, etc.

含官能基之單體較佳為含羥基之單體、含羧基之單體，更佳為含羥基之單體。 The functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxyl group-containing monomer, and more preferably a hydroxyl group-containing monomer.

構成前述丙烯酸系聚合物之含官能基之單體可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The functional group-containing monomer constituting the acrylic polymer may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of these monomers may be selected arbitrarily.

於前述丙烯酸系聚合物中，相對於結構單元之總量，源自含官能基之單體之結構單元之含量較佳為1質量%至35質量%，更佳為3質量%至32質量%，尤佳為5質量%至30質量%。 In the aforementioned acrylic polymer, the content of structural units derived from functional group-containing monomers is preferably 1 to 35 mass%, more preferably 3 to 32 mass%, relative to the total amount of structural units. , especially preferably 5% by mass to 30% by mass.

前述丙烯酸系聚合物亦可除了源自(甲基)丙烯酸烷基酯之結構單元及源自含官能基之單體之結構單元以外，進而具有源自其他單體之結構單元。 The acrylic polymer may further have structural units derived from other monomers in addition to structural units derived from alkyl (meth)acrylate and functional group-containing monomers.

前述其他單體只要可與(甲基)丙烯酸烷基酯等共聚合，則並無特別限定。 The aforementioned other monomers are not particularly limited as long as they can be copolymerized with alkyl (meth)acrylate and the like.

作為前述其他單體，例如可列舉：苯乙烯、α-甲基苯乙烯、乙烯基甲苯、甲酸乙烯酯、乙酸乙烯酯、丙烯腈、丙烯醯胺等。 Examples of the other monomer include styrene, α-methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide, and the like.

構成前述丙烯酸系聚合物之前述其他單體可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The other monomers constituting the acrylic polymer may be one type, or two or more types. In the case of two or more types, the combination and ratio of these monomers may be selected arbitrarily.

前述丙烯酸系聚合物可用作上述非能量線硬化性之黏著性樹脂(I-1a)。 The acrylic polymer can be used as the non-energy ray curable adhesive resin (I-1a).

另一方面，使具有能量線聚合性不飽和基(能量線聚合性基)之含不飽和基之化合物與前述丙烯酸系聚合物中之官能基反應而成者可用作上述能量線硬化性之黏著性樹脂(I-2a)。 On the other hand, an unsaturated group-containing compound having an energy ray polymerizable unsaturated group (energy ray polymerizable group) reacted with a functional group in the acrylic polymer can be used as the energy ray curable compound. Adhesive resin (I-2a).

再者，於本發明中，所謂「能量線聚合性」，意指藉由照射能量線而聚合之性質。 In addition, in the present invention, "energy ray polymerizability" means the property of polymerizing by irradiating energy rays.

第一黏著劑組成物(I-1)所含有之黏著性樹脂(I-1a)可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The adhesive resin (I-1a) contained in the first adhesive composition (I-1) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of the adhesive resins (I-1a) may be Take your pick.

於第一黏著劑組成物(I-1)中，相對於第一黏著劑組成物(I-1)之總質量，黏著性樹脂(I-1a)之含量較佳為5質量%至99質量%，更佳為10質量%至95質量%，尤佳為15質量%至90質量%。 In the first adhesive composition (I-1), the content of the adhesive resin (I-1a) is preferably 5% by mass to 99% by mass relative to the total mass of the first adhesive composition (I-1) %, more preferably 10 mass% to 95 mass%, particularly preferably 15 mass% to 90 mass%.

(能量線硬化性化合物) (Energy ray curing compound)

作為第一黏著劑組成物(I-1)所含有之前述能量線硬化性化合物，可列舉具有能量線聚合性不飽和基且藉由照射能量線而可硬化之單體或低聚物。 Examples of the energy ray curable compound contained in the first adhesive composition (I-1) include monomers or oligomers that have an energy ray polymerizable unsaturated group and are curable by irradiation with energy rays.

能量線硬化性化合物中，作為單體，例如可列舉：三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇(甲基)丙烯酸酯等多元(甲基)丙烯酸酯；(甲基)丙烯酸胺基甲酸酯；聚酯(甲基)丙烯酸酯；聚醚(甲基)丙烯酸酯；環氧(甲基)丙烯酸酯等。 Among the energy ray curable compounds, examples of monomers include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, and dipentaerythritol hexa(meth)acrylate. (meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate and other poly(meth)acrylates; (meth)acrylic acid aminomethyl Acid ester; polyester (meth)acrylate; polyether (meth)acrylate; epoxy (meth)acrylate, etc.

能量線硬化性化合物中，作為低聚物，例如可列舉上述所例示之單體聚合而成之低聚物等。 Among the energy ray curable compounds, examples of the oligomer include oligomers obtained by polymerizing the monomers exemplified above.

能量線硬化性化合物就分子量相對較大，不易使第一黏著劑層之儲存彈性模量降低之方面而言，較佳為(甲基)丙烯酸胺基甲酸酯、(甲基)丙烯酸胺基甲酸酯低聚物。 The energy ray curable compound has a relatively large molecular weight and is less likely to reduce the storage elastic modulus of the first adhesive layer. Preferable compounds are (meth)acrylic urethane and (meth)acrylic amine. Formate oligomers.

於本說明書中，所謂「低聚物」，意指重量平均分子量或式量為5,000以下之物質。 In this specification, the so-called "oligomer" means a substance with a weight average molecular weight or formula weight of 5,000 or less.

第一黏著劑組成物(I-1)所含有之前述能量線硬化性化合物可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The energy ray curable compound contained in the first adhesive composition (I-1) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of these compounds may be selected arbitrarily. .

於第一黏著劑組成物(I-1)中，相對於第一黏著劑組成物(I-1)之總質量，前述能量線硬化性化合物之含量較佳為1質量%至95質量%，更佳為5質量%至90質量%，尤佳為10質量%至85質量%。 In the first adhesive composition (I-1), relative to the total mass of the first adhesive composition (I-1), the content of the aforementioned energy ray curable compound is preferably 1 mass % to 95 mass %, More preferably, it is 5 mass % to 90 mass %, especially 10 mass % to 85 mass %.

(交聯劑) (cross-linking agent)

於使用除了源自(甲基)丙烯酸烷基酯之結構單元以外進而具有源自含官能基之單體之結構單元的前述丙烯酸系聚合物作為黏著性樹脂(I-1a)之情形時，第一黏著劑組成物(I-1)較佳為進而含有交聯劑。 When the aforementioned acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the first An adhesive composition (I-1) preferably further contains a cross-linking agent.

前述交聯劑例如與前述官能基反應，將黏著性樹脂(I-1a)彼此交聯。 For example, the crosslinking agent reacts with the functional group to crosslink the adhesive resins (I-1a).

作為交聯劑，例如可列舉：甲苯二異氰酸酯、六亞甲基二異氰酸酯、二甲苯二異氰酸酯、該等二異氰酸酯之加合物等異氰酸酯系交聯劑(具有異氰酸酯基之交聯劑)；乙二醇縮水甘油醚等環氧系交聯劑(具有縮水甘油基之交聯劑)；六[1-(2-甲基)-氮丙啶基]三磷三嗪等氮丙啶系交聯劑(具有氮丙啶基之交聯劑)；鋁螯合物等金屬螯合物系交聯劑(具有金屬螯合物結構之交聯劑)；異氰脲酸酯系交聯劑(具有異氰脲酸骨架之交聯劑)等。 Examples of the cross-linking agent include isocyanate-based cross-linking agents (cross-linking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylene diisocyanate, and adducts of these diisocyanates; B Epoxy cross-linking agents (cross-linking agents with glycidyl groups) such as glycol glycidyl ether; aziridine cross-linking agents such as hexa[1-(2-methyl)-aziridinyl]triphosphotriazine agent (cross-linking agent with aziridine group); aluminum chelate and other metal chelate-based cross-linking agents (cross-linking agent with metal chelate structure); isocyanurate-based cross-linking agent (with Isocyanuric acid skeleton cross-linking agent), etc.

就提高黏著劑之凝聚力而提高第一黏著劑層之黏著力之方面、及容易獲取等方面而言，交聯劑較佳為異氰酸酯系交聯劑。 The cross-linking agent is preferably an isocyanate-based cross-linking agent in terms of improving the cohesion of the adhesive and improving the adhesion of the first adhesive layer and being easy to obtain.

第一黏著劑組成物(I-1)所含有之交聯劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The cross-linking agent contained in the first adhesive composition (I-1) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of the cross-linking agents may be selected arbitrarily.

於第一黏著劑組成物(I-1)中，相對於黏著性樹脂(I-1a)之含量100質量份，交聯劑之含量較佳為0.01質量份至50質量份，更佳為0.1質量份至20質量份，尤佳為1質量份至10質量份。 In the first adhesive composition (I-1), the content of the cross-linking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1, relative to 100 parts by mass of the adhesive resin (I-1a). Parts by mass to 20 parts by mass, preferably 1 part by mass to 10 parts by mass.

(光聚合起始劑) (Photopolymerization initiator)

第一黏著劑組成物(I-1)亦可進而含有光聚合起始劑。含有光聚合起始劑之第一黏著劑組成物(I-1)即便照射紫外線等能量相對較低之能量線，亦充分進行硬化反應。 The first adhesive composition (I-1) may further contain a photopolymerization initiator. Even if the first adhesive composition (I-1) containing a photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction fully proceeds.

作為前述光聚合起始劑，例如可列舉：安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基縮酮等安息香化合物；苯乙酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯乙酮化合物；雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等醯基氧化膦化合物；苄基苯基硫醚、一硫化四甲基秋蘭姆等硫醚化合物；1-羥基環己基苯基酮等α-縮酮化合物；偶氮雙異丁腈等偶氮化合物；二茂鈦等二茂鈦化合物；噻噸酮等噻噸酮化合物；過氧化物化合物；二乙醯等二酮化合物；苯偶醯、二苯偶醯、二苯甲酮、2,4-二乙基噻噸酮、1,2-二苯基甲烷、2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮、2-氯蒽醌等。 Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal. ; Acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethan-1-one and other phenylethanes Ketone compounds; bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and other hydroxyphosphine oxide compounds; benzyl Phylphenyl sulfide, tetramethylthiuram monosulfide and other sulfide compounds; α-ketal compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene and other dioxins Titanocene compounds; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diethyl chloride; benzoyl chloride, diphenyl chloride, benzophenone, 2,4-diethylthioxanthone , 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]acetone, 2-chloroanthraquinone, etc.

另外，作為前述光聚合起始劑，例如亦可使用：1-氯蒽醌等醌化合物；胺等光增感劑等。 In addition, as the photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, etc. can also be used.

第一黏著劑組成物(I-1)所含有之光聚合起始劑可為僅一 種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The photopolymerization initiator contained in the first adhesive composition (I-1) can be only one There can also be two or more types. In the case of two or more situations, the combination and ratio of these can be selected arbitrarily.

於第一黏著劑組成物(I-1)中，相對於前述能量線硬化性化合物之含量100質量份，光聚合起始劑之含量較佳為0.01質量份至20質量份，更佳為0.03質量份至10質量份，尤佳為0.05質量份至5質量份。 In the first adhesive composition (I-1), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass, more preferably 0.03 parts by mass relative to 100 parts by mass of the energy ray curable compound. Parts by mass to 10 parts by mass, preferably 0.05 parts by mass to 5 parts by mass.

(其他添加劑) (Other additives)

第一黏著劑組成物(I-1)亦可於不損及本發明之功效之範圍內，含有不相當於上述任一成分之其他添加劑。 The first adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above components within the scope that does not impair the efficacy of the present invention.

作為前述其他添加劑，例如可列舉：抗靜電劑、抗氧化劑、軟化劑(塑化劑)、填充劑(填料)、防銹劑、著色劑(顏料、染料)、增感劑、增黏劑、反應延遲劑、交聯促進劑(觸媒)等公知之添加劑。 Examples of the aforementioned other additives include antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, and tackifiers. Well-known additives such as reaction retardants and cross-linking accelerators (catalysts).

再者，所謂反應延遲劑，例如為抑制下述情況者：由於混入至第一黏著劑組成物(I-1)中之觸媒之作用，而於保存中之第一黏著劑組成物(I-1)中進行非目標之交聯反應。作為反應延遲劑，例如可列舉藉由對觸媒之螯合而形成螯合錯合物者，更具體而言，可列舉於一分子中具有2個以上之羰基(-C(=O)-)者。 Furthermore, the so-called reaction delaying agent is, for example, one that suppresses the reaction of the first adhesive composition (I-1) during storage due to the action of the catalyst mixed into the first adhesive composition (I-1). -1) Perform non-target cross-linking reactions. Examples of the reaction retardant include those that form a chelate complex by chelating a catalyst. More specifically, those having two or more carbonyl groups (-C(=O)- in one molecule) can be used. )By.

第一黏著劑組成物(I-1)所含有之其他添加劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The number of other additives contained in the first adhesive composition (I-1) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these additives may be selected arbitrarily.

於第一黏著劑組成物(I-1)中，其他添加劑之含量並無特別限定，只要根據該其他添加劑之種類而適當選擇即可。 In the first adhesive composition (I-1), the content of other additives is not particularly limited, as long as it is appropriately selected according to the types of the other additives.

(溶劑) (solvent)

第一黏著劑組成物(I-1)亦可含有溶劑。第一黏著劑組成物(I-1)藉由含有溶劑，而對塗敷對象面之塗敷適性提高。 The first adhesive composition (I-1) may also contain a solvent. By containing a solvent, the first adhesive composition (I-1) improves its coating suitability for the surface to be coated.

前述溶劑較佳為有機溶劑，作為前述有機溶劑，例如可列 舉：甲基乙基酮、丙酮等酮；乙酸乙酯等酯(羧酸酯)；四氫呋喃、二噁烷等醚；環己烷、正己烷等脂肪族烴；甲苯、二甲苯等芳香族烴；1-丙醇、2-丙醇等醇等。 The aforementioned solvent is preferably an organic solvent. Examples of the aforementioned organic solvent include Examples: ketones such as methyl ethyl ketone and acetone; esters (carboxylic acid esters) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; aliphatic hydrocarbons such as cyclohexane and n-hexane; aromatic hydrocarbons such as toluene and xylene ; 1-propanol, 2-propanol and other alcohols, etc.

作為前述溶劑，例如可將製造黏著性樹脂(I-1a)時所用者不自黏著性樹脂(I-1a)中去掉而直接於第一黏著劑組成物(I-1)中使用，亦可於製造第一黏著劑組成物(I-1)時另行添加種類與製造黏著性樹脂(I-1a)時所用者相同或不同之溶劑。 As the aforementioned solvent, for example, the solvent used when manufacturing the adhesive resin (I-1a) can be used directly in the first adhesive composition (I-1) without being removed from the adhesive resin (I-1a), or it can be used directly in the first adhesive composition (I-1). When manufacturing the first adhesive composition (I-1), a solvent that is the same or different from that used when manufacturing the adhesive resin (I-1a) is additionally added.

第一黏著劑組成物(I-1)所含有之溶劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The solvent contained in the first adhesive composition (I-1) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of the solvents may be selected arbitrarily.

於第一黏著劑組成物(I-1)中，溶劑之含量並無特別限定，只要適當調節即可。 In the first adhesive composition (I-1), the content of the solvent is not particularly limited, as long as it is appropriately adjusted.

{第一黏著劑組成物(I-2)} {First adhesive composition (I-2)}

第一黏著劑組成物(I-2)如上所述，含有於非能量線硬化性之黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(I-2a)。 The first adhesive composition (I-2), as described above, contains an energy ray curable adhesive resin (I) in which an unsaturated group is introduced into the side chain of a non-energy ray curable adhesive resin (I-1a). -2a).

(黏著性樹脂(I-2a)) (Adhesive resin (I-2a))

前述黏著性樹脂(I-2a)例如係藉由使具有能量線聚合性不飽和基之含不飽和基之化合物與黏著性樹脂(I-1a)中之官能基反應而獲得。 The adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy ray polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

前述含不飽和基之化合物為除了前述能量線聚合性不飽和基以外，進而具有藉由與黏著性樹脂(I-1a)中之官能基反應而可與黏著性樹脂(I-1a)鍵結之基的化合物。 The aforementioned unsaturated group-containing compound, in addition to the aforementioned energy-beam polymerizable unsaturated group, further has the ability to bond with the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a). the base compound.

作為前述能量線聚合性不飽和基，例如可列舉：(甲基)丙烯醯基、乙烯基(亦稱為乙烯基(ethenyl))、烯丙基(亦稱為2-丙烯基)等，較佳為(甲基)丙烯醯基。 Examples of the energy ray polymerizable unsaturated group include: (meth)acrylyl group, vinyl group (also called ethenyl), allyl group (also called 2-propenyl group), etc. Preferred is (meth)acrylyl.

作為可與黏著性樹脂(I-1a)中之官能基鍵結之基，例如可列舉：可與羥基或胺基鍵結之異氰酸酯基及縮水甘油基、以及可與羧基或環氧基鍵結之羥基及胺基等。 Examples of the group that can be bonded to the functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group that can be bonded to a hydroxyl group or an amine group, and a carboxyl group or an epoxy group. hydroxyl and amine groups, etc.

作為前述含不飽和基之化合物，例如可列舉：(甲基)丙烯醯氧基乙基異氰酸酯、(甲基)丙烯醯基異氰酸酯、(甲基)丙烯酸縮水甘油酯等，較佳為(甲基)丙烯醯氧基乙基異氰酸酯，其中尤佳為2-甲基丙烯醯氧基乙基異氰酸酯。 Examples of the aforementioned unsaturated group-containing compound include: (meth)acryloxyethyl isocyanate, (meth)acryloxyethyl isocyanate, (meth)glycidyl acrylate, etc., and (meth)acryloxyethyl isocyanate is preferred. ) acryloyloxyethyl isocyanate, of which 2-methacryloyloxyethyl isocyanate is particularly preferred.

前述異氰酸酯化合物可與黏著性樹脂(I-1a)中之羥基鍵結，將黏著性樹脂(I-1a)中之總羥基設為100mol時的前述異氰酸酯化合物之使用量較佳為10mol至150mol，更佳為20mol至140mol，進而佳為30mol至130mol。 The aforementioned isocyanate compound can bond with the hydroxyl groups in the adhesive resin (I-1a). When the total hydroxyl groups in the adhesive resin (I-1a) are set to 100 mol, the usage amount of the aforementioned isocyanate compound is preferably 10 mol to 150 mol. More preferably, it is 20 mol to 140 mol, still more preferably 30 mol to 130 mol.

第一黏著劑組成物(I-2)所含有之黏著性樹脂(I-2a)可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The adhesive resin (I-2a) contained in the first adhesive composition (I-2) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of the adhesive resins (I-2a) may be Take your pick.

於第一黏著劑組成物(I-2)中，相對於第一黏著劑組成物(I-2)之總質量，黏著性樹脂(I-2a)之含量較佳為5質量%至99質量%，更佳為10質量%至95質量%，尤佳為10質量%至90質量%。 In the first adhesive composition (I-2), the content of the adhesive resin (I-2a) is preferably 5% by mass to 99% by mass relative to the total mass of the first adhesive composition (I-2) %, more preferably 10 mass% to 95 mass%, particularly preferably 10 mass% to 90 mass%.

(交聯劑) (cross-linking agent)

例如於使用與黏著性樹脂(I-1a)中者相同的具有源自含官能基之單體之結構單元之前述丙烯酸系聚合物作為黏著性樹脂(I-2a)之情形時，第一黏著劑組成物(I-2)亦可進而含有交聯劑。 For example, when the acrylic polymer having the same structural unit derived from a functional group-containing monomer as the adhesive resin (I-1a) is used as the adhesive resin (I-2a), the first adhesive resin The agent composition (I-2) may further contain a cross-linking agent.

作為第一黏著劑組成物(I-2)中之前述交聯劑，可列舉與第一黏著劑組成物(I-1)中之交聯劑相同者。 Examples of the cross-linking agent in the first adhesive composition (I-2) include the same cross-linking agents as those in the first adhesive composition (I-1).

第一黏著劑組成物(I-2)所含有之交聯劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The cross-linking agent contained in the first adhesive composition (I-2) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio may be selected arbitrarily.

於第一黏著劑組成物(I-2)中，相對於黏著性樹脂(I-2a)之含量100質量份，交聯劑之含量較佳為0.01質量份至50質量份，更佳為0.1質量份至20質量份，尤佳為1質量份至10質量份。 In the first adhesive composition (I-2), the content of the cross-linking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1, relative to 100 parts by mass of the adhesive resin (I-2a). Parts by mass to 20 parts by mass, preferably 1 part by mass to 10 parts by mass.

(光聚合起始劑) (Photopolymerization initiator)

第一黏著劑組成物(I-2)亦可進而含有光聚合起始劑。含有光聚合起始劑之第一黏著劑組成物(I-2)即便照射紫外線等能量相對較低之能量線，亦充分進行硬化反應。 The first adhesive composition (I-2) may further contain a photopolymerization initiator. Even if the first adhesive composition (I-2) containing a photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction fully proceeds.

作為第一黏著劑組成物(I-2)中之前述光聚合起始劑，可列舉與第一黏著劑組成物(I-1)中之光聚合起始劑相同者。 The photopolymerization initiator in the first adhesive composition (I-2) may be the same as the photopolymerization initiator in the first adhesive composition (I-1).

第一黏著劑組成物(I-2)所含有之光聚合起始劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The photopolymerization initiator contained in the first adhesive composition (I-2) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio may be selected arbitrarily.

於第一黏著劑組成物(I-2)中，相對於黏著性樹脂(I-2a)之含量100質量份，光聚合起始劑之含量較佳為0.01質量份至20質量份，更佳為0.03質量份至10質量份，尤佳為0.05質量份至5質量份。 In the first adhesive composition (I-2), the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a), more preferably The amount is 0.03 parts by mass to 10 parts by mass, particularly preferably 0.05 parts by mass to 5 parts by mass.

(其他添加劑) (Other additives)

第一黏著劑組成物(I-2)亦可於不損及本發明之功效之範圍內，含有不相當於上述任一成分之其他添加劑。 The first adhesive composition (I-2) may also contain other additives that are not equivalent to any of the above components within the scope that does not impair the efficacy of the present invention.

作為第一黏著劑組成物(I-2)中之前述其他添加劑，可列舉與第一黏著劑組成物(I-1)中之其他添加劑相同者。 Examples of the aforementioned other additives in the first adhesive composition (I-2) include the same additives as those in the first adhesive composition (I-1).

第一黏著劑組成物(I-2)所含有之其他添加劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The number of other additives contained in the first adhesive composition (I-2) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these additives may be selected arbitrarily.

於第一黏著劑組成物(I-2)中，其他添加劑之含量並無特別限定，只要根據該其他添加劑之種類而適當選擇即可。 In the first adhesive composition (I-2), the content of other additives is not particularly limited, as long as it is appropriately selected according to the types of the other additives.

(溶劑) (solvent)

第一黏著劑組成物(I-2)亦能以與第一黏著劑組成物(I-1)之情形相同之目的而含有溶劑。 The first adhesive composition (I-2) may also contain a solvent for the same purpose as the first adhesive composition (I-1).

作為第一黏著劑組成物(I-2)中之前述溶劑，可列舉與第一黏著劑組成物(I-1)中之溶劑相同者。 Examples of the solvent in the first adhesive composition (I-2) include the same solvents as those used in the first adhesive composition (I-1).

第一黏著劑組成物(I-2)所含有之溶劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The solvent contained in the first adhesive composition (I-2) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of the solvents may be selected arbitrarily.

於第一黏著劑組成物(I-2)中，溶劑之含量並無特別限定，只要適當調節即可。 In the first adhesive composition (I-2), the content of the solvent is not particularly limited, as long as it is appropriately adjusted.

{第一黏著劑組成物(I-3)} {First adhesive composition (I-3)}

第一黏著劑組成物(I-3)如上所述，含有前述黏著性樹脂(I-2a)及能量線硬化性低分子化合物。 The first adhesive composition (I-3) contains the aforementioned adhesive resin (I-2a) and an energy ray curable low molecular compound as described above.

於第一黏著劑組成物(I-3)中，相對於第一黏著劑組成物(I-3)之總質量，黏著性樹脂(I-2a)之含量較佳為5質量%至99質量%，更佳為10質量%至95質量%，尤佳為15質量%至90質量%。 In the first adhesive composition (I-3), the content of the adhesive resin (I-2a) is preferably 5% by mass to 99% by mass relative to the total mass of the first adhesive composition (I-3) %, more preferably 10 mass% to 95 mass%, particularly preferably 15 mass% to 90 mass%.

(能量線硬化性低分子化合物) (Energy ray hardening low molecular compound)

作為第一黏著劑組成物(I-3)所含有之前述能量線硬化性低分子化合物，可列舉具有能量線聚合性不飽和基且藉由照射能量線而可硬化之單體及低聚物，可列舉與第一黏著劑組成物(I-1)所含有之能量線硬化性化合物相同者。 Examples of the energy ray curable low molecular compound contained in the first adhesive composition (I-3) include monomers and oligomers that have an energy ray polymerizable unsaturated group and are curable by irradiation with energy rays. , the same ones as the energy ray curable compound contained in the first adhesive composition (I-1) can be mentioned.

第一黏著劑組成物(I-3)所含有之前述能量線硬化性低分子化合物可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The energy ray curable low molecular compound contained in the first adhesive composition (I-3) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of these compounds may be Take your pick.

於第一黏著劑組成物(I-3)中，相對於黏著性樹脂(I-2a)之含量100質量份，前述能量線硬化性低分子化合物之含量較佳為0.01質量份至 300質量份，更佳為0.03質量份至200質量份，尤佳為0.05質量份至100質量份。 In the first adhesive composition (I-3), the content of the energy ray curable low molecular compound is preferably 0.01 to 0.01 parts by mass relative to 100 parts by mass of the adhesive resin (I-2a). 300 parts by mass, more preferably 0.03 to 200 parts by mass, particularly preferably 0.05 to 100 parts by mass.

(光聚合起始劑) (Photopolymerization initiator)

第一黏著劑組成物(I-3)亦可進而含有光聚合起始劑。含有光聚合起始劑之第一黏著劑組成物(I-3)即便照射紫外線等能量相對較低之能量線，亦充分進行硬化反應。 The first adhesive composition (I-3) may further contain a photopolymerization initiator. Even if the first adhesive composition (I-3) containing a photopolymerization initiator is irradiated with relatively low-energy energy rays such as ultraviolet rays, the curing reaction fully proceeds.

作為第一黏著劑組成物(I-3)中之前述光聚合起始劑，可列舉與第一黏著劑組成物(I-1)中之光聚合起始劑相同者。 The photopolymerization initiator in the first adhesive composition (I-3) may be the same as the photopolymerization initiator in the first adhesive composition (I-1).

第一黏著劑組成物(I-3)所含有之光聚合起始劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The photopolymerization initiator contained in the first adhesive composition (I-3) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio may be selected arbitrarily.

於第一黏著劑組成物(I-3)中，相對於黏著性樹脂(I-2a)及前述能量線硬化性低分子化合物之總含量100質量份，光聚合起始劑之含量較佳為0.01質量份至20質量份，更佳為0.03質量份至10質量份，尤佳為0.05質量份至5質量份。 In the first adhesive composition (I-3), the content of the photopolymerization initiator is preferably: 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, particularly preferably 0.05 to 5 parts by mass.

(其他添加劑) (Other additives)

第一黏著劑組成物(I-3)亦可於不損及本發明之功效之範圍內，含有不相當於上述任一成分之其他添加劑。 The first adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above components within the scope that does not impair the efficacy of the present invention.

作為前述其他添加劑，可列舉與第一黏著劑組成物(I-1)中之其他添加劑相同者。 Examples of the aforementioned other additives include the same additives as those in the first adhesive composition (I-1).

第一黏著劑組成物(I-3)所含有之其他添加劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The number of other additives contained in the first adhesive composition (I-3) may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these additives may be selected arbitrarily.

於第一黏著劑組成物(I-3)中，其他添加劑之含量並無特別限定，只要根據該其他添加劑之種類而適當選擇即可。 In the first adhesive composition (I-3), the content of other additives is not particularly limited, as long as it is appropriately selected according to the types of the other additives.

(溶劑) (solvent)

第一黏著劑組成物(I-3)亦能以與第一黏著劑組成物(I-1)之情形相同之目的而含有溶劑。 The first adhesive composition (I-3) may also contain a solvent for the same purpose as the first adhesive composition (I-1).

作為第一黏著劑組成物(I-3)中之前述溶劑，可列舉與第一黏著劑組成物(I-1)中之溶劑相同者。 Examples of the solvent in the first adhesive composition (I-3) include the same solvents as those used in the first adhesive composition (I-1).

第一黏著劑組成物(I-3)所含有之溶劑可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The solvent contained in the first adhesive composition (I-3) may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of the solvents may be selected arbitrarily.

於第一黏著劑組成物(I-3)中，溶劑之含量並無特別限定，只要適當調節即可。 In the first adhesive composition (I-3), the content of the solvent is not particularly limited, as long as it is appropriately adjusted.

{第一黏著劑組成物(I-1)至第一黏著劑組成物(I-3)以外之第一黏著劑組成物} {The first adhesive composition other than the first adhesive composition (I-1) to the first adhesive composition (I-3)}

至此為止，主要對第一黏著劑組成物(I-1)、第一黏著劑組成物(I-2)及第一黏著劑組成物(I-3)進行了說明，但作為該等之含有成分而說明者，即便於該等三種第一黏著劑組成物以外之所有第一黏著劑組成物(於本實施形態中，稱為「第一黏著劑組成物(I-1)至第一黏著劑組成物(I-3)以外之第一黏著劑組成物」)中亦可同樣地使用。 So far, the first adhesive composition (I-1), the first adhesive composition (I-2), and the first adhesive composition (I-3) have been mainly described. However, as the content of these Those that are described as components include all first adhesive compositions (in this embodiment, referred to as "first adhesive composition (I-1)) to first adhesive compositions other than these three first adhesive compositions. It can also be used in the same manner as the first adhesive composition other than the adhesive composition (I-3).

作為第一黏著劑組成物(I-1)至第一黏著劑組成物(I-3)以外之第一黏著劑組成物，除了能量線硬化性之第一黏著劑組成物以外，亦可列舉非能量線硬化性之第一黏著劑組成物。 As the first adhesive composition other than the first adhesive composition (I-1) to the first adhesive composition (I-3), in addition to the energy ray curable first adhesive composition, there may also be mentioned The first non-energy ray curable adhesive composition.

作為非能量線硬化性之第一黏著劑組成物，例如可列舉：含有丙烯酸系樹脂(具有(甲基)丙烯醯基之樹脂)、胺基甲酸酯系樹脂(具有胺基甲酸酯鍵之樹脂)、橡膠系樹脂(具有橡膠結構之樹脂)、聚矽氧系樹脂(具有矽氧烷鍵之樹脂)、環氧系樹脂(具有環氧基之樹脂)、聚乙烯醚或聚碳酸酯等黏著性樹脂者，較佳為含有丙烯酸系樹脂者。 Examples of the non-energy ray curable first adhesive composition include acrylic resins (resins having (meth)acryl groups) and urethane resins (resins having urethane bonds). Resin), rubber resin (resin with rubber structure), polysilicone resin (resin with siloxane bonds), epoxy resin (resin with epoxy group), polyvinyl ether or polycarbonate Adhesive resins such as those containing acrylic resin are preferred.

第一黏著劑組成物(I-1)至第一黏著劑組成物(I-3)以外之第一 黏著劑組成物較佳為含有一種或兩種以上之交聯劑，該交聯劑之含量可設為與上述第一黏著劑組成物(I-1)等之情形相同。 The first adhesive composition other than the first adhesive composition (I-1) to the first adhesive composition (I-3) The adhesive composition preferably contains one or more cross-linking agents, and the content of the cross-linking agent can be the same as in the above-mentioned first adhesive composition (I-1).

<第一黏著劑組成物的製造方法> <Production method of first adhesive composition>

第一黏著劑組成物(I-1)至第一黏著劑組成物(I-3)等前述第一黏著劑組成物係藉由將前述黏著劑、及視需要的前述黏著劑以外之成分等用以構成第一黏著劑組成物之各成分調配而獲得。 The first adhesive compositions such as the first adhesive composition (I-1) to the first adhesive composition (I-3) are prepared by combining the aforementioned adhesive and, if necessary, components other than the aforementioned adhesive. The components used to constitute the first adhesive composition are prepared by blending.

調配各成分時之添加順序並無特別限定，亦可同時添加兩種以上之成分。 The order in which the ingredients are added is not particularly limited, and two or more ingredients may be added at the same time.

於使用溶劑之情形時，可藉由將溶劑與溶劑以外之任一調配成分混合將該調配成分預先稀釋而使用，亦可不將溶劑以外之任一調配成分預先稀釋，而藉由將溶劑與該等調配成分混合而使用。 When a solvent is used, the solvent may be mixed with any preparation component other than the solvent to dilute the preparation component in advance before use, or the solvent may not be pre-diluted with any preparation component other than the solvent, and the solvent may be mixed with the preparation component. Mix the ingredients before use.

於調配時混合各成分之方法並無特別限定，只要自下述方法中適當選擇即可：使攪拌子或攪拌翼等旋轉而進行混合之方法；使用混合器進行混合之方法；施加超音波進行混合之方法等公知之方法。 The method of mixing each component during preparation is not particularly limited, as long as it is appropriately selected from the following methods: mixing by rotating a stirrer or stirring blade, mixing with a mixer, or applying ultrasonic waves. Mixing methods and other well-known methods.

各成分之添加及混合時之溫度以及時間只要各調配成分不劣化，則並無特別限定，適當調節即可，溫度較佳為15℃至30℃。 The temperature and time for adding and mixing each component are not particularly limited as long as the components do not deteriorate and can be adjusted appropriately. The temperature is preferably 15°C to 30°C.

{第一黏著劑層之組成} {Composition of the first adhesive layer}

本實施形態中之第一黏著劑層之組成係自上述第一黏著劑層組成物中去掉溶劑而成。 The composition of the first adhesive layer in this embodiment is obtained by removing the solvent from the above-mentioned first adhesive layer composition.

於第一黏著劑層組成物為前述第一黏著劑組成物(I-1)之情形時的第一黏著劑層(I-1)中，黏著性樹脂(I-1a)相對於第一黏著劑層(I-1)之總質量的含有比率較佳為50質量%至99質量%，更佳為55質量%至95質量%，進而佳為60質量%至90質量%。另外，作為本發明之另一方面，黏著性樹脂(I-1a)相對於第一黏著劑層(I-1)之總質量的含有比率亦可為25質量%至80質量%，亦 可為30質量%至75質量%，亦可為35質量%至70質量%。另外，能量線硬化性化合物相對於第一黏著劑層(I-1)之總質量的含有比率較佳為1質量%至50質量%，更佳為2質量%至48質量%，進而佳為5質量%至45質量%。於第一黏著劑層(I-1)含有交聯劑之情形時，交聯劑相對於第一黏著劑層(I-1)之總質量的含有比率較佳為0.1質量%至10質量%，更佳為0.2質量%至9質量%，進而佳為0.3質量%至8質量%。 In the case where the first adhesive layer composition is the aforementioned first adhesive composition (I-1), in the first adhesive layer (I-1), the adhesive resin (I-1a) is The content ratio of the total mass of the agent layer (I-1) is preferably 50 mass% to 99 mass%, more preferably 55 mass% to 95 mass%, further preferably 60 mass% to 90 mass%. In addition, as another aspect of the present invention, the content ratio of the adhesive resin (I-1a) to the total mass of the first adhesive layer (I-1) may be 25% by mass to 80% by mass, or It may be 30 mass % to 75 mass %, or 35 mass % to 70 mass %. In addition, the content ratio of the energy ray curable compound relative to the total mass of the first adhesive layer (I-1) is preferably 1 mass % to 50 mass %, more preferably 2 mass % to 48 mass %, and still more preferably 5% by mass to 45% by mass. When the first adhesive layer (I-1) contains a cross-linking agent, the content ratio of the cross-linking agent relative to the total mass of the first adhesive layer (I-1) is preferably 0.1% by mass to 10% by mass. , more preferably 0.2 mass% to 9 mass%, further preferably 0.3 mass% to 8 mass%.

於第一黏著劑層組成物為前述第一黏著劑組成物(I-2)之情形時的第一黏著劑層(I-2)中，黏著性樹脂(I-2a)相對於第一黏著劑層(I-2)之總質量的含有比率較佳為50質量%至99質量%，更佳為60質量%至98質量%，進而佳為70質量%至97質量%。於第一黏著劑層(I-2)含有交聯劑之情形時，交聯劑相對於第一黏著劑層(I-2)之總質量的含有比率較佳為0.1質量%至10質量%，更佳為0.2質量%至9質量%，進而佳為0.3質量%至8質量%。 In the case where the first adhesive layer composition is the aforementioned first adhesive composition (I-2), in the first adhesive layer (I-2), the adhesive resin (I-2a) is The content ratio of the total mass of the agent layer (I-2) is preferably 50 mass% to 99 mass%, more preferably 60 mass% to 98 mass%, further preferably 70 mass% to 97 mass%. When the first adhesive layer (I-2) contains a cross-linking agent, the content ratio of the cross-linking agent relative to the total mass of the first adhesive layer (I-2) is preferably 0.1% by mass to 10% by mass. , more preferably 0.2 mass% to 9 mass%, further preferably 0.3 mass% to 8 mass%.

於第一黏著劑層組成物為前述第一黏著劑組成物(I-3)之情形時的第一黏著劑層(I-3)中，黏著性樹脂(I-2a)相對於第一黏著劑層(I-3)之總質量的含有比率較佳為50質量%至99質量%，更佳為55質量%至95質量%，進而佳為60質量%至90質量%。另外，能量線硬化性低分子化合物相對於第一黏著劑層(I-3)之總質量的含有比率較佳為1質量%至50質量%，更佳為2質量%至48質量%，進而佳為5質量%至45質量%。於第一黏著劑層(I-3)含有交聯劑之情形時，交聯劑相對於第一黏著劑層(I-3)之總質量的含有比率較佳為0.1質量%至10質量%，更佳為0.2質量%至9質量%，進而佳為0.3質量%至8質量%。 In the case where the first adhesive layer composition is the aforementioned first adhesive composition (I-3), in the first adhesive layer (I-3), the adhesive resin (I-2a) is The content ratio of the total mass of the agent layer (I-3) is preferably 50 mass% to 99 mass%, more preferably 55 mass% to 95 mass%, further preferably 60 mass% to 90 mass%. In addition, the content ratio of the energy ray curable low molecular compound relative to the total mass of the first adhesive layer (I-3) is preferably 1 mass % to 50 mass %, more preferably 2 mass % to 48 mass %, and further Preferably, it is 5 mass % to 45 mass %. When the first adhesive layer (I-3) contains a cross-linking agent, the content ratio of the cross-linking agent relative to the total mass of the first adhesive layer (I-3) is preferably 0.1% by mass to 10% by mass. , more preferably 0.2 mass% to 9 mass%, further preferably 0.3 mass% to 8 mass%.

於本實施形態中，較佳為含有黏著性樹脂(1-2a)及交聯劑之第一黏著劑層(I-2)。於該情形時，黏著性樹脂(1-2a)較佳為使具有異氰酸酯基及能量線聚合性不飽和基之含不飽和基之化合物來與具有源自(甲基)丙 烯酸烷基酯之結構單元、及源自含羥基之單體之單元的丙烯酸系聚合物反應而獲得之丙烯酸系聚合物。交聯劑可使用第一黏著劑組成物(I-1)中例示之化合物，尤佳為使用甲苯二異氰酸酯。 In this embodiment, the first adhesive layer (I-2) containing an adhesive resin (1-2a) and a cross-linking agent is preferred. In this case, the adhesive resin (1-2a) is preferably an unsaturated group-containing compound having an isocyanate group and an energy-beam polymerizable unsaturated group and a compound having a compound derived from (methyl)propyl An acrylic polymer obtained by reacting an acrylic polymer with a structural unit of an alkyl alkyl ester and a unit derived from a hydroxyl-containing monomer. As the cross-linking agent, the compounds exemplified in the first adhesive composition (I-1) can be used, and toluene diisocyanate is particularly preferably used.

源自(甲基)丙烯酸烷基酯之結構單元相對於黏著性樹脂(1-2a)之總質量的含有比率較佳為50質量%至99質量%，更佳為60質量%至98質量%，進而佳為70質量%至97質量%。源自含羥基之單體之單元相對於黏著性樹脂(1-2a)之總質量的含有比率較佳為0.5質量%至15質量%，更佳為1.0質量%至10質量%，進而佳為2.0質量%至10質量%。黏著性樹脂(1-2a)中之(甲基)丙烯酸烷基酯較佳為烷基之碳數為1至12，更佳為1至4。黏著性樹脂(1-2a)較佳為具有兩種以上之源自(甲基)丙烯酸烷基酯之結構單元，更佳為具有源自(甲基)丙烯酸甲酯及(甲基)丙烯酸正丁酯之結構單元，進而佳為具有源自甲基丙烯酸甲酯及丙烯酸正丁酯之結構單元。作為黏著性樹脂(1-2a)中之含羥基之單體，可使用前述第一黏著劑組成物(I-1)中所例示者，尤佳為使用丙烯酸2-羥基乙酯。作為具有異氰酸酯基及能量線聚合性不飽和基之含不飽和基之化合物，可使用第一黏著劑組成物(I-2)中所例示之化合物，尤佳為使用2-甲基丙烯醯氧基乙基異氰酸酯。將源自前述含羥基之單體之總羥基設為100mol時的前述具有異氰酸酯基及能量線聚合性不飽和基之含不飽和基之化合物之使用量較佳為20mol至80mol，更佳為25mol至75mol，進而佳為30mol至70mol。 The content ratio of the structural unit derived from alkyl (meth)acrylate relative to the total mass of the adhesive resin (1-2a) is preferably 50 mass% to 99 mass%, more preferably 60 mass% to 98 mass% , more preferably 70 mass% to 97 mass%. The content ratio of the unit derived from the hydroxyl-containing monomer relative to the total mass of the adhesive resin (1-2a) is preferably 0.5 mass% to 15 mass%, more preferably 1.0 mass% to 10 mass%, and still more preferably 2.0% by mass to 10% by mass. The alkyl (meth)acrylate in the adhesive resin (1-2a) preferably has a carbon number of 1 to 12 in the alkyl group, more preferably 1 to 4. The adhesive resin (1-2a) preferably has two or more structural units derived from alkyl (meth)acrylate, and more preferably has a structural unit derived from methyl (meth)acrylate and n-(meth)acrylic acid. The structural unit of butyl ester is more preferably a structural unit derived from methyl methacrylate and n-butyl acrylate. As the hydroxyl-containing monomer in the adhesive resin (1-2a), those exemplified in the first adhesive composition (I-1) can be used, and 2-hydroxyethyl acrylate is particularly preferred. As the unsaturated group-containing compound having an isocyanate group and an energy ray polymerizable unsaturated group, the compounds illustrated in the first adhesive composition (I-2) can be used, and 2-methacryloxy is particularly preferred. Ethyl isocyanate. When the total hydroxyl group derived from the hydroxyl-containing monomer is 100 mol, the usage amount of the unsaturated group-containing compound having an isocyanate group and an energy beam polymerizable unsaturated group is preferably 20 mol to 80 mol, more preferably 25 mol. to 75 mol, more preferably 30 mol to 70 mol.

◎基材 ◎Substrate

基材為片材狀或膜狀，作為該基材之構成材料，例如可列舉各種樹脂。 The base material is in the form of a sheet or film, and examples of the constituent material of the base material include various resins.

作為前述樹脂，例如可列舉：低密度聚乙烯(亦稱為LDPE；Low Density Polyethylene)、直鏈低密度聚乙烯(亦稱為LLDPE；Linear Low Density Polyethylene)、高密度聚乙烯(亦稱為HDPE；High Density Polyethylene)等 聚乙烯；聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、降莰烯樹脂等聚乙烯以外之聚烯烴；乙烯-乙酸乙烯酯共聚物(亦稱為EVA；Ethylene-Vinyl Acetate)、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-降莰烯共聚物等乙烯系共聚物(亦即，使用乙烯作為單體所得之共聚物)；聚氯乙烯、氯乙烯共聚物等氯乙烯系樹脂(亦即，使用氯乙烯作為單體所得之樹脂)；聚苯乙烯；聚環烯烴；聚對苯二甲酸乙二酯(亦稱為PET；Polyethylene Terephthalate)、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚間苯二甲酸乙二酯、聚2,6-萘二甲酸乙二酯、所有結構單元為具有芳香族環式基之全芳香族聚酯等聚酯；兩種以上之前述聚酯之共聚物；聚(甲基)丙烯酸酯；聚胺基甲酸酯；聚丙烯酸胺基甲酸酯；聚醯亞胺；聚醯胺；聚碳酸酯；氟樹脂；聚縮酸；改性聚苯醚；聚苯硫醚；聚碸；聚醚酮等。 Examples of the resin include low-density polyethylene (also called LDPE; Low Density Polyethylene), linear low-density polyethylene (also called LLDPE; Linear Low Density Polyethylene), and high-density polyethylene (also called HDPE). ;High Density Polyethylene), etc. Polyethylene; polyolefins other than polyethylene such as polypropylene, polybutylene, polybutadiene, polymethylpentene, norbornene resin; ethylene-vinyl acetate copolymer (also known as EVA; Ethylene-Vinyl Acetate ), ethylene-based copolymers (that is, copolymers using ethylene as a monomer) such as ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, and ethylene-norbornene copolymer; Vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymer (that is, resins obtained by using vinyl chloride as a monomer); polystyrene; polycyclic olefin; polyethylene terephthalate (also known as PET; Polyethylene Terephthalate), polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene 2,6-naphthalate, all structural units have aromatic rings Polyesters such as fully aromatic polyesters; copolymers of two or more of the above-mentioned polyesters; poly(meth)acrylate; polyurethane; polyacrylic urethane; polyimide ;Polyamide; polycarbonate; fluororesin; polyacetic acid; modified polyphenylene ether; polyphenylene sulfide; polypropylene; polyetherketone, etc.

另外，作為前述樹脂，例如亦可列舉前述聚酯與該聚酯以外之樹脂的混合物等聚合物合金。前述聚酯與該聚酯以外之樹脂的聚合物合金較佳為聚酯以外之樹脂之量為相對少量。 Examples of the resin include polymer alloys such as mixtures of the polyester and resins other than the polyester. The polymer alloy of the polyester and the resin other than the polyester preferably contains a relatively small amount of the resin other than the polyester.

另外，作為前述樹脂，例如亦可列舉：至此為止所例示之前述樹脂之一種或兩種以上交聯而成之交聯樹脂；使用至此為止所例示之前述樹脂之一種或兩種以上的離子聚合物等改性樹脂。 Examples of the resin include: a cross-linked resin obtained by cross-linking one or more of the above-described resins; and an ion polymerization using one or two or more of the above-described resins. Materials and other modified resins.

再者，於本說明書中，所謂「(甲基)丙烯酸」，係設為包含「丙烯酸」及「甲基丙烯酸」兩者之概念。關於與(甲基)丙烯酸類似之用語亦相同，例如，所謂「(甲基)丙烯酸酯」為包含「丙烯酸酯」及「甲基丙烯酸酯」兩者之概念，所謂「(甲基)丙烯醯基」為包含「丙烯醯基」及「甲基丙烯醯基」兩者之概念。 In addition, in this specification, the term "(meth)acrylic acid" is a concept including both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth)acrylic acid. For example, the so-called "(meth)acrylate" is a concept that includes both "acrylate" and "methacrylate". The so-called "(meth)acrylate" "Group" is a concept that includes both "acrylyl group" and "methacrylyl group".

構成基材之樹脂可為僅一種，亦可為兩種以上，於為兩種以上之情形時，該等之組合及比率可任意選擇。 The number of resins constituting the base material may be only one type, or two or more types. In the case of two or more types, the combination and ratio may be selected arbitrarily.

基材可為僅一層(單層)，亦可為兩層以上之多層，於為多層之情形時，該等多層可彼此相同亦可不同，該等多層之組合並無特別限定。 The base material may be only one layer (single layer), or may be multiple layers of two or more. In the case of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

基材之厚度較佳為5μm至1000μm，更佳為10μm至500μm，進而佳為15μm至300μm，尤佳為20μm至150μm。 The thickness of the base material is preferably 5 μm to 1000 μm, more preferably 10 μm to 500 μm, further preferably 15 μm to 300 μm, particularly preferably 20 μm to 150 μm.

此處，所謂「基材之厚度」，意指基材整體之厚度，例如所謂由多層所構成之基材之厚度，意指構成基材之所有層之合計厚度。 Here, the "thickness of the base material" means the thickness of the entire base material. For example, the thickness of the base material composed of multiple layers means the total thickness of all the layers constituting the base material.

基材較佳為厚度之精度高，亦即與部位無關而厚度之偏差得到抑制。上述構成材料中，作為可用於構成此種厚度之精度高之基材的材料，例如可列舉：聚乙烯、聚乙烯以外之聚烯烴、聚對苯二甲酸乙二酯、乙烯-乙酸乙烯酯共聚物(EVA)等。 It is preferable that the base material has high thickness accuracy, that is, thickness variation is suppressed regardless of the location. Among the above-mentioned constituent materials, examples of materials that can be used to form a substrate with such a high thickness accuracy include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, and ethylene-vinyl acetate copolymer. Objects (EVA), etc.

基材亦可除了前述樹脂等主要構成材料以外，含有填充材料、著色劑、抗靜電劑、抗氧化劑、有機潤滑劑、觸媒、軟化劑(塑化劑)等公知之各種添加劑。 In addition to the main constituent materials such as the aforementioned resin, the base material may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), and the like.

基材可為透明，亦可為不透明，亦可根據目的而著色，亦可蒸鍍有其他層。 The base material can be transparent or opaque, can be colored according to the purpose, and can be evaporated with other layers.

於前述黏彈性層為能量線硬化性之情形時，基材較佳為使能量線透過。 When the viscoelastic layer is energy ray hardenable, it is preferable that the base material transmits energy rays.

基材可藉由公知之方法製造。例如，含有樹脂之基材可藉由將含有前述樹脂之樹脂組成物成形而製造。 The base material can be produced by known methods. For example, a base material containing a resin can be produced by molding a resin composition containing the aforementioned resin.

◎剝離膜 ◎Peel-off film

前述剝離膜可為該領域中公知者。 The aforementioned release film may be one well-known in the field.

作為較佳之前述剝離膜，例如可列舉：藉由聚矽氧處理等將聚對苯二甲酸乙二酯等樹脂製膜之至少一個表面進行剝離處理而成者；膜之至少一個表面成為由聚烯烴所構成之剝離面者等。 Preferable examples of the release film include those in which at least one surface of a film made of a resin such as polyethylene terephthalate is subjected to a release treatment by polysiloxane treatment or the like, and at least one surface of the film is made of polyethylene terephthalate. The peeling surface composed of olefins, etc.

剝離膜之厚度較佳為與基材之厚度相同。 The thickness of the release film is preferably the same as the thickness of the base material.

◎第二黏著劑層 ◎Second adhesive layer

第二黏著劑層(亦即，貼合黏著劑層)為用以將本實施形態之端子保護用膠帶貼合於支撐體之黏著劑層。 The second adhesive layer (that is, the bonding adhesive layer) is an adhesive layer for bonding the terminal protection tape of this embodiment to the support.

前述第二黏著劑層可為該領域中公知者，可自上述第一黏著劑層中所說明者中配合支撐體而適當選擇。 The aforementioned second adhesive layer may be one well known in the field, and may be appropriately selected from those described in the aforementioned first adhesive layer in conjunction with the support.

用以形成第二黏著劑層之第二黏著劑組成物與前述第一黏著劑組成物相同，第二黏著劑組成物的製造方法亦與前述第一黏著劑組成物的製造方法相同。 The second adhesive composition used to form the second adhesive layer is the same as the first adhesive composition, and the manufacturing method of the second adhesive composition is also the same as the manufacturing method of the first adhesive composition.

◇端子保護用膠帶的製造方法 ◇How to manufacture terminal protection tape

前述端子保護用膠帶可藉由將上述各層以成為對應之位置關係之方式依序積層而製造。各層之形成方法如上文所說明。 The terminal protection tape can be manufactured by sequentially stacking the above-mentioned layers so as to have a corresponding positional relationship. Each layer is formed as described above.

例如，於剝離膜之剝離處理面上塗敷上述嵌埋層形成用組成物，視需要進行乾燥，藉此積層嵌埋層。於另一剝離膜之剝離處理面上塗敷上述第一黏著劑組成物，視需要進行乾燥，藉此積層第一黏著劑層。藉由將剝離膜上之嵌埋層與另一剝離膜上之第一黏著劑層貼合，而獲得依序積層有剝離膜、嵌埋層、第一黏著劑層及剝離膜之端子保護用膠帶。剝離膜只要於使用端子保護用膠帶時去掉即可。 For example, the embedding layer forming composition is applied to the release-treated surface of the release film and dried if necessary, thereby laminating the embedding layer. The above-mentioned first adhesive composition is applied to the release-treated surface of another release film, and dried if necessary, thereby laminating the first adhesive layer. By laminating the embedded layer on the peeling film and the first adhesive layer on another peeling film, a terminal protection layer in which the peeling film, the embedded layer, the first adhesive layer and the peeling film are sequentially laminated is obtained. Tape. The peeling film only needs to be removed when using the terminal protection tape.

另外，於基材上將嵌埋層及第一黏著劑層依序於該等之厚度方向積層的端子保護用膠帶可藉由以下所示之方法而製造。 In addition, a terminal protective tape in which an embedding layer and a first adhesive layer are sequentially laminated in the thickness direction on a base material can be produced by the method shown below.

例如，將上述依序積層有剝離膜、嵌埋層、第一黏著劑層及剝離膜之端子保護用膠帶的嵌埋層之側之剝離膜剝離，將該端子保護用膠帶與基材貼合，藉此可獲得於基材上依序積層有嵌埋層、第一黏著劑層及剝離膜之端子保護用膠帶。剝離膜只要於使用端子保護用膠帶時去掉即可。 For example, the peeling film on the side of the embedding layer of the terminal protection tape in which the peeling film, the embedding layer, the first adhesive layer and the peeling film are laminated in this order is peeled off, and the terminal protection tape is bonded to the base material. , thereby obtaining a terminal protection tape in which an embedding layer, a first adhesive layer and a release film are sequentially laminated on a base material. The peeling film only needs to be removed when using the terminal protection tape.

另外，例如對基材進行嵌埋層形成用組成物之擠出成形，藉 此於基材上積層嵌埋層。於剝離膜之剝離處理面上塗敷上述第一黏著劑組成物，視需要進行乾燥，藉此積層第一黏著劑層。繼而，藉由將該剝離膜上之第一黏著劑層與基材上之嵌埋層貼合，而亦可獲得於基材上依序積層有嵌埋層、第一黏著劑層及剝離膜之端子保護用膠帶。剝離膜只要於使用端子保護用膠帶時去掉即可。 In addition, for example, the base material is subjected to extrusion molding of the embedding layer forming composition. This builds up an embedded layer on the base material. The above-mentioned first adhesive composition is applied to the release-treated surface of the release film and dried if necessary, thereby laminating the first adhesive layer. Then, by laminating the first adhesive layer on the release film and the embedded layer on the base material, the embedded layer, the first adhesive layer and the release film are sequentially laminated on the base material. Terminal protection tape. The peeling film only needs to be removed when using the terminal protection tape.

另外，將第二黏著劑層、基材、嵌埋層及第一黏著劑層依序於該等之厚度方向積層的雙面膠帶之形態的端子保護用膠帶可藉由以下所示之方法而製造。 In addition, a terminal protection tape in the form of a double-sided tape in which the second adhesive layer, the base material, the embedded layer and the first adhesive layer are laminated in this order in the thickness direction can be produced by the method shown below. manufacturing.

例如，準備上述於基材上依序積層有嵌埋層、第一黏著劑層及剝離膜之端子保護用膠帶。於另一剝離膜之剝離處理面上塗敷上述第二黏著劑組成物，視需要進行乾燥，藉此積層第二黏著劑層。繼而，藉由將該剝離膜上之第二黏著劑層與前述端子保護用膠帶之基材貼合，而可獲得依序積層有剝離膜、第二黏著劑層、基材、嵌埋層、第一黏著劑層及剝離膜之端子保護用膠帶。剝離膜只要於使用端子保護用膠帶時去掉即可。 For example, prepare the above-described terminal protection tape in which an embedding layer, a first adhesive layer, and a release film are sequentially laminated on a base material. The above-mentioned second adhesive composition is applied to the release-treated surface of another release film and dried if necessary, thereby laminating a second adhesive layer. Then, by laminating the second adhesive layer on the release film to the base material of the terminal protection tape, a release film, the second adhesive layer, the base material, the embedding layer, and the like can be obtained in this order. Terminal protection tape for the first adhesive layer and release film. The peeling film only needs to be removed when using the terminal protection tape.

具備上述各層以外之其他層的端子保護用膠帶可藉由下述方式製造：於上述製造方法中，以前述其他層之積層位置成為適當位置之方式，適當追加進行前述其他層之形成步驟及積層步驟中之任一者或兩者。 A terminal protective tape having layers other than the above-mentioned layers can be produced by appropriately adding the steps of forming and laminating the other layers in the above-mentioned manufacturing method so that the lamination positions of the other layers become appropriate positions. Either or both of the steps.

◇附電磁波屏蔽膜之半導體裝置的製造方法 ◇Method for manufacturing semiconductor device with electromagnetic wave shielding film

本實施形態之端子保護用膠帶例如可用於以下之附電磁波屏蔽膜之半導體裝置的製造方法。 The terminal protection tape of this embodiment can be used, for example, in the following method of manufacturing a semiconductor device with an electromagnetic wave shielding film.

圖5為示意性地表示本實施形態之附電磁波屏蔽膜之半導體裝置的製造方法之一實施形態的剖面圖，上述附電磁波屏蔽膜之半導體裝置的製造方法係將依序具有黏著劑層14、嵌埋層13及基材11之端子保護用膠帶3如圖4所示般固定於支撐體30而進行。 5 is a cross-sectional view schematically showing an embodiment of a method of manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present embodiment. The above method of manufacturing a semiconductor device with an electromagnetic wave shielding film sequentially includes an adhesive layer 14, The embedding layer 13 and the terminal protection tape 3 of the base material 11 are fixed to the support 30 as shown in FIG. 4 .

首先，如圖5(a)、圖5(b)所示，將附端子之半導體裝置65以端子91之側，亦即電路基板63之端子形成面63a為下而按壓於端子保護用膠帶之黏彈性層12，使端子91埋設於黏彈性層12。 First, as shown in FIGS. 5(a) and 5(b) , the semiconductor device 65 with terminals is pressed against the terminal protection tape with the terminal 91 side, that is, the terminal formation surface 63a of the circuit board 63 facing down. The viscoelastic layer 12 embeds the terminal 91 in the viscoelastic layer 12 .

此時，使黏彈性層12與附端子之半導體裝置65之端子91接觸，將附端子之半導體裝置65按壓於端子保護用膠帶。藉此，使黏彈性層12之黏著劑層14之側之最表面依序壓接於端子91之表面及電路基板63之端子形成面63a。此時，藉由將黏彈性層12加熱，而黏彈性層12軟化，以覆蓋端子91之方式於端子91間擴展，密接於端子形成面63a，並且覆蓋端子91之表面，尤其是端子形成面63a之附近部位之表面，而埋設端子91。 At this time, the viscoelastic layer 12 is brought into contact with the terminals 91 of the semiconductor device with terminals 65, and the semiconductor device with terminals 65 is pressed against the terminal protection tape. Thereby, the outermost surface of the viscoelastic layer 12 on the adhesive layer 14 side is sequentially pressed against the surface of the terminal 91 and the terminal forming surface 63 a of the circuit substrate 63 . At this time, by heating the viscoelastic layer 12, the viscoelastic layer 12 softens, expands between the terminals 91 to cover the terminals 91, is in close contact with the terminal forming surface 63a, and covers the surface of the terminals 91, especially the terminal forming surface. The terminal 91 is buried on the surface of the vicinity of 63a.

作為使附端子之半導體裝置65壓接於端子保護用膠帶之方法，可應用使對象物壓接於各種片材並貼附之公知之方法，例如可列舉使用層壓輥或真空層壓機之方法等。 As a method for press-bonding the semiconductor device 65 with terminals to the terminal protection tape, a known method of press-bonding an object to various sheets and attaching them can be applied, for example, using a lamination roller or a vacuum laminator. Methods etc.

使附端子之半導體裝置65壓接於端子保護用膠帶時之壓力並無特別限定，較佳為0.1MPa至1.5MPa，更佳為0.3MPa至1.3MPa。加熱溫度較佳為30℃至70℃，更佳為35℃至65℃，尤佳為40℃至60℃。另外，較佳為將黏彈性層12之黏著劑層14貼合於端子形成面63a。 The pressure when crimping the semiconductor device 65 with terminals to the terminal protective tape is not particularly limited, but is preferably 0.1MPa to 1.5MPa, more preferably 0.3MPa to 1.3MPa. The heating temperature is preferably 30°C to 70°C, more preferably 35°C to 65°C, and particularly preferably 40°C to 60°C. In addition, it is preferable to bond the adhesive layer 14 of the viscoelastic layer 12 to the terminal formation surface 63a.

於附端子之半導體裝置65之露出面塗佈導電性樹脂101(圖5(c))，進而進行熱硬化，藉此形成由導電材料所構成之電磁波屏蔽膜10(圖5(d))。作為藉由導電材料進行包覆而形成電磁波屏蔽膜10之方法，亦可使用濺鍍、離子鍍、噴塗等方法。 The conductive resin 101 is coated on the exposed surface of the semiconductor device 65 with terminals (Fig. 5(c)) and then thermally cured, thereby forming the electromagnetic wave shielding film 10 made of the conductive material (Fig. 5(d)). As a method of forming the electromagnetic wave shielding film 10 by coating with a conductive material, methods such as sputtering, ion plating, and spray coating may also be used.

前述端子保護用膠帶於黏彈性層12之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層12之厚度為80μm至800μm，故而於將附端子之半導體裝置之端子埋設於黏彈性層12時，即便為焊料球等容易產生浮起之端子電極亦可埋設，可使電路基板63之端子形成面63a密接於黏彈 性層12。結果，可防止作為端子電極之端子91與電磁波屏蔽膜10電性短路，亦無需設置於步驟上繁雜之遮蔽部等。 In the dynamic viscoelasticity measurement of the viscoelastic layer 12 of the aforementioned terminal protection tape, the value of tan δ at 50°C was more than 0.2, and the thickness of the viscoelastic layer 12 was 80 μm to 800 μm. Therefore, it is buried in the terminals of the semiconductor device with terminals. In the viscoelastic layer 12, even terminal electrodes that are prone to floating, such as solder balls, can be buried, so that the terminal forming surface 63a of the circuit substrate 63 can be closely connected to the viscoelastic layer 12. Sexual layer 12. As a result, the terminal 91 serving as the terminal electrode and the electromagnetic wave shielding film 10 can be prevented from being electrically short-circuited, and there is no need to provide a shielding portion that is complicated in steps.

藉由自具有黏彈性層12之端子保護用膠帶3拾取附電磁波屏蔽膜之半導體裝置66，而可將經電磁波屏蔽膜10包覆之附端子之半導體裝置65取出(圖5(e))。 By picking up the semiconductor device 66 with the electromagnetic wave shielding film from the terminal protection tape 3 having the viscoelastic layer 12, the semiconductor device 65 with the terminal covered with the electromagnetic wave shielding film 10 can be taken out (Fig. 5(e)).

圖5所示之附電磁波屏蔽膜之半導體裝置的製造方法中，成為電磁波屏蔽對象之附端子之半導體裝置65可為個別地製造之附端子之半導體裝置65，亦可為藉由切割法而單片化之附端子之半導體裝置65。 In the method of manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. 5 , the semiconductor device with a terminal 65 that is an object of electromagnetic wave shielding may be a semiconductor device with a terminal 65 that is manufactured individually, or may be individually manufactured by a cutting method. Chip-based semiconductor device 65 with terminals.

圖5所示之附電磁波屏蔽膜之半導體裝置的製造方法中，顯示了使用端子保護用膠帶3對經單片化並利用密封樹脂64將各個電子零件61、62密封的附端子之半導體裝置65進行電磁波屏蔽的方法，但亦可如下般，自單片化之前的附端子之半導體裝置集合體6使用端子保護用膠帶2對附端子之半導體裝置65進行電磁波屏蔽。 The manufacturing method of a semiconductor device with an electromagnetic wave shielding film shown in FIG. 5 shows a pair of semiconductor devices with terminals 65 that are singulated using terminal protection tapes 3 and each electronic component 61 and 62 is sealed with a sealing resin 64 The electromagnetic wave shielding method may be as follows: using the terminal protective tape 2 to shield the terminal-attached semiconductor device 65 from the terminal-attached semiconductor device assembly 6 before singulation.

圖6為示意性地表示本實施形態之附電磁波屏蔽膜之半導體裝置的製造方法的其他實施形態的剖面圖，上述附電磁波屏蔽膜之半導體裝置的製造方法使用依序具有黏著劑層14、嵌埋層13及基材11之端子保護用膠帶2對附端子之半導體裝置65進行電磁波屏蔽。 6 is a cross-sectional view schematically showing another embodiment of the method for manufacturing a semiconductor device with an electromagnetic wave shielding film according to the present embodiment. The method for manufacturing a semiconductor device with an electromagnetic wave shielding film uses an adhesive layer 14, an inlay, and an adhesive layer 14 in sequence. The terminal protection tape 2 of the buried layer 13 and the base material 11 shields the semiconductor device 65 with terminals from electromagnetic waves.

首先，如圖6(a)、圖6(b)所示，將藉由電路基板63而連結的附端子之半導體裝置集合體6以端子91之側，亦即電路基板63之端子形成面63a為下而按壓於端子保護用膠帶之黏彈性層12，與前述圖5(a)、圖5(b)之時同樣地，使端子91埋設於黏彈性層12。 First, as shown in FIGS. 6(a) and 6(b) , the semiconductor device assembly 6 with terminals connected by the circuit board 63 is placed on the side of the terminal 91, that is, the terminal formation surface 63a of the circuit board 63. The viscoelastic layer 12 of the terminal protection tape is pressed down, and the terminal 91 is embedded in the viscoelastic layer 12 in the same manner as in the aforementioned FIGS. 5(a) and 5(b) .

此時，一邊對附端子之半導體裝置集合體6自上側施加壓力，一邊與前述圖5(a)、圖5(b)之時同樣地，使端子91埋設於端子保護用膠帶之黏彈性層12。 At this time, while applying pressure to the semiconductor device assembly 6 with terminals from the upper side, the terminals 91 are buried in the viscoelastic layer of the terminal protective tape in the same manner as in the case of FIGS. 5(a) and 5(b) . 12.

另外，藉由一邊將黏彈性層12加熱一邊貼合，而可使黏彈性層12軟化，使黏彈性層12密接於電路基板63之端子形成面63a。使附端子之半導體裝置集合體6壓接於端子保護用膠帶時之壓力並無特別限定，較佳為0.1MPa至1.5MPa，更佳為0.3MPa至1.3MPa。加熱溫度較佳為30℃至70℃，更佳為35℃至65℃，尤佳為40℃至60℃。另外，較佳為將黏彈性層12之黏著劑層14貼合於端子形成面63a。 In addition, by laminating the viscoelastic layer 12 while heating, the viscoelastic layer 12 can be softened, so that the viscoelastic layer 12 is in close contact with the terminal formation surface 63 a of the circuit board 63 . The pressure when crimping the semiconductor device assembly 6 with terminals to the terminal protective tape is not particularly limited, but is preferably 0.1MPa to 1.5MPa, more preferably 0.3MPa to 1.3MPa. The heating temperature is preferably 30°C to 70°C, more preferably 35°C to 65°C, and particularly preferably 40°C to 60°C. In addition, it is preferable to bond the adhesive layer 14 of the viscoelastic layer 12 to the terminal formation surface 63a.

繼而，切割附端子之半導體裝置集合體6，製成附端子之半導體裝置65(圖6(c))。形成電磁波屏蔽膜之步驟中所用的本實施形態之端子保護用膠帶兼作附端子之半導體裝置集合體6之切割膠帶。而且，圖5所示之附電磁波屏蔽膜之半導體裝置的製造方法中，於成為電磁波屏蔽對象之附端子之半導體裝置65為藉由切割法而經單片化的附端子之半導體裝置65時，需要拾取切割膠帶上之附端子之半導體裝置並改貼於端子保護用膠帶的作業(圖5(a))。另一方面，圖6所示之附電磁波屏蔽膜之半導體裝置的製造方法中，可省略將切割膠帶上之附端子之半導體裝置65改貼於端子保護用膠帶的作業。 Next, the semiconductor device assembly 6 with terminals is cut to produce a semiconductor device 65 with terminals (Fig. 6(c)). The terminal protection tape of this embodiment used in the step of forming the electromagnetic wave shielding film also serves as a dicing tape for the semiconductor device assembly 6 with terminals. Furthermore, in the method of manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. 5 , when the semiconductor device with a terminal 65 that is a target of electromagnetic wave shielding is a semiconductor device with a terminal 65 that has been singulated by a dicing method, It is necessary to pick up the semiconductor device with terminals on the cutting tape and reattach it to the terminal protection tape (Figure 5 (a)). On the other hand, in the method of manufacturing a semiconductor device with an electromagnetic wave shielding film shown in FIG. 6 , the operation of attaching the semiconductor device with terminals 65 on the dicing tape to the terminal protection tape can be omitted.

於附端子之半導體裝置65之露出面塗佈導電性樹脂101(圖6(d))。此時，於附端子之半導體裝置集合體6的各附端子之半導體裝置65之邊界部分中當導電性樹脂101之分離不充分之情形時，亦可使用擴展(expand)裝置等將端子保護用膠帶延伸。可於經單片化之附端子之半導體裝置65各自之側面塗佈有導電性樹脂101之狀態下，將各個附端子之半導體裝置65單片化。進而，將塗佈於經單片化之附端子之半導體裝置65之頂面及側面的導電性樹脂101加熱而進行硬化，於附端子之半導體裝置65之露出面形成由導電材料所構成之電磁波屏蔽膜10(圖6(e))。亦可於附端子之半導體裝置65(圖6(c))直接濺鍍導電材料而形成電磁波屏蔽膜10(圖6(e))。 The conductive resin 101 is applied to the exposed surface of the semiconductor device 65 with terminals (Fig. 6(d)). At this time, when separation of the conductive resin 101 is insufficient in the boundary portion of each terminal-attached semiconductor device 65 of the terminal-attached semiconductor device assembly 6, an expansion device or the like may be used to protect the terminals. Tape extension. Each of the semiconductor devices with terminals 65 may be singulated in a state where the side surfaces of the semiconductor devices with terminals 65 are coated with the conductive resin 101 . Furthermore, the conductive resin 101 applied to the top and side surfaces of the singulated semiconductor device with terminals 65 is heated and hardened, and an electromagnetic wave composed of the conductive material is formed on the exposed surface of the semiconductor device with terminals 65 . Shielding film 10 (Fig. 6(e)). The conductive material can also be directly sputtered on the semiconductor device 65 with terminals (Fig. 6(c)) to form the electromagnetic wave shielding film 10 (Fig. 6(e)).

前述端子保護用膠帶於黏彈性層12之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，黏彈性層12之厚度為80μm至800μm，故而於將附端子之半導體裝置集合體6之端子埋設於黏彈性層12時，即便為焊料球等容易產生浮起之端子電極亦可埋設，可使電路基板63之端子形成面63a密接於黏彈性層12。結果，可防止作為端子電極之端子91與電磁波屏蔽膜10電性短路，亦無需設置於步驟上繁雜之遮蔽部等。 In the dynamic viscoelasticity measurement of the viscoelastic layer 12 of the aforementioned terminal protection tape, the value of tan δ at 50° C. was more than 0.2, and the thickness of the viscoelastic layer 12 was 80 μm to 800 μm. Therefore, it is suitable for use in the semiconductor device assembly 6 to which terminals will be attached. When the terminals are embedded in the viscoelastic layer 12, even terminal electrodes that are prone to floating such as solder balls can be embedded, so that the terminal forming surface 63a of the circuit substrate 63 can be closely connected to the viscoelastic layer 12. As a result, the terminal 91 serving as the terminal electrode and the electromagnetic wave shielding film 10 can be prevented from being electrically short-circuited, and there is no need to provide a shielding portion that is complicated in steps.

藉由自具有黏彈性層12之端子保護用膠帶拾取附電磁波屏蔽膜之半導體裝置66，而可取出經電磁波屏蔽膜10包覆之附端子之半導體裝置65(圖6(f))。 By picking up the semiconductor device 66 with the electromagnetic wave shielding film from the terminal protection tape having the viscoelastic layer 12, the semiconductor device 65 with the terminals covered with the electromagnetic wave shielding film 10 can be taken out (FIG. 6(f)).

於本實施形態之端子保護用膠帶中，端子91之高度h0較佳為低於黏彈性層12之厚度d1，較佳為1.2≦d1/h0≦5.0。具體而言，較佳為50μm至300μm，更佳為60μm至270μm，尤佳為80μm至240μm。藉由端子91之高度為前述下限值以上，而可進一步提高端子91之功能。另外，藉由端子91之高度為前述上限值以下，而更加提高抑制黏彈性層12於端子91上部之殘存的效果。 In the terminal protection tape of this embodiment, the height h0 of the terminal 91 is preferably lower than the thickness d1 of the viscoelastic layer 12, and is preferably 1.2≦d1/h0≦5.0. Specifically, 50 μm to 300 μm is preferred, 60 μm to 270 μm is more preferred, and 80 μm to 240 μm is particularly preferred. By setting the height of the terminal 91 above the lower limit, the function of the terminal 91 can be further improved. In addition, since the height of the terminal 91 is below the aforementioned upper limit, the effect of suppressing the viscoelastic layer 12 from remaining on the upper portion of the terminal 91 is further enhanced.

再者，於本說明書中，所謂「端子之高度」，意指端子中存在於距端子形成面最高的位置之部位之高度。於附端子之半導體裝置集合體6及附端子之半導體裝置65具有多個端子91之情形時，端子91之高度h0可設為該等之平均。端子之高度例如可藉由非接觸型三維光干涉式表面粗糙度計(日本Veeco公司製造，商品名：Wyko NT1100)進行測定。 Furthermore, in this specification, the "height of the terminal" means the height of the portion of the terminal that is located at the highest position from the terminal formation surface. In the case where the semiconductor device assembly 6 with terminals and the semiconductor device 65 with terminals have a plurality of terminals 91 , the height h0 of the terminals 91 may be the average of these terminals. The height of the terminal can be measured, for example, with a non-contact three-dimensional optical interference surface roughness meter (manufactured by Veeco Japan, trade name: Wyko NT1100).

端子91之寬度並無特別限定，較佳為170μm至350μm，更佳為200μm至320μm，尤佳為230μm至290μm。藉由端子91之寬度為前述下限值以上，則可進一步提高端子91之功能。另外，藉由端子91之寬度為前述上限值以下，而更加提高抑制黏彈性層12於端子91上部之殘存的效果。 The width of the terminal 91 is not particularly limited, but is preferably 170 μm to 350 μm, more preferably 200 μm to 320 μm, and particularly preferably 230 μm to 290 μm. By setting the width of the terminal 91 above the aforementioned lower limit, the function of the terminal 91 can be further improved. In addition, since the width of the terminal 91 is below the aforementioned upper limit, the effect of suppressing the viscoelastic layer 12 from remaining on the upper portion of the terminal 91 is further enhanced.

再者，於本說明書中，所謂「端子之寬度」，意指自對端子形成面垂直方向往下俯視端子時，以直線連結端子表面上之不同2點之間所得的線段之最大值。於端子為球形或半球形時，所謂「端子之寬度」，係指往下俯視端子時的該端子之最大直徑(端子徑)。 Furthermore, in this specification, the so-called "width of the terminal" means the maximum value of a line segment connecting two different points on the surface of the terminal with a straight line when looking down at the terminal from a direction perpendicular to the surface where the terminal is formed. When the terminal is spherical or hemispherical, the so-called "width of the terminal" refers to the maximum diameter (terminal diameter) of the terminal when the terminal is viewed downward.

相鄰端子91間之距離(亦即，端子間之間距)並無特別限定，較佳為250μm至800μm，更佳為300μm至600μm，尤佳為350μm至500μm。藉由前述距離為前述下限值以上，而可進一步提高端子91之嵌埋性。另外，藉由前述距離為前述上限值以下，而更加提高抑制黏彈性層12於端子91上部之殘存的效果。 The distance between adjacent terminals 91 (that is, the distance between terminals) is not particularly limited, but is preferably 250 μm to 800 μm, more preferably 300 μm to 600 μm, and particularly preferably 350 μm to 500 μm. By setting the distance above the lower limit, the embedding property of the terminal 91 can be further improved. In addition, since the distance is equal to or less than the upper limit, the effect of suppressing the viscoelastic layer 12 from remaining on the upper portion of the terminal 91 is further enhanced.

再者，於本說明書中，所謂「相鄰端子間之距離」，意指相鄰端子彼此的表面間之距離之最小值。 Furthermore, in this specification, the so-called "distance between adjacent terminals" means the minimum distance between the surfaces of adjacent terminals.

[實施例] [Example]

以下，藉由具體之實施例對本發明進行更詳細說明。然而，本發明絲毫不限定於以下所示之實施例。 Below, the present invention will be described in more detail through specific embodiments. However, the present invention is not limited to the Examples shown below at all.

<單體> <Single>

將簡稱之單體之正式名稱示於以下。 The official name of the abbreviated unit is shown below.

HEA：丙烯酸2-羥基乙酯 HEA: 2-hydroxyethyl acrylate

BA：丙烯酸正丁酯 BA: n-butyl acrylate

MMA：甲基丙烯酸甲酯 MMA: methyl methacrylate

AAc：丙烯酸 AAc: Acrylic

(貼合黏著劑層形成用組成物A之製造) (Production of composition A for forming adhesive layer)

添加由BA 90質量份及AAc 10質量份所構成之丙烯酸系共聚物(重量平均分子量(Mw)為400,000)33.6質量份、作為溶劑之乙基甲基酮66.4質量份、作為交聯劑之多元環氧化合物(三菱瓦斯化學股份有限公司製造，製品名 「TETRAD-C」)0.2質量份，進行30分鐘攪拌而製備貼合黏著劑層形成用組成物A。 33.6 parts by mass of an acrylic copolymer (weight average molecular weight (Mw): 400,000) consisting of 90 parts by mass of BA and 10 parts by mass of AAc, 66.4 parts by mass of ethyl methyl ketone as a solvent, and polyvinyl alcohol as a cross-linking agent were added Epoxy compound (manufactured by Mitsubishi Gas Chemical Co., Ltd., product name "TETRAD-C") 0.2 parts by mass, and stirred for 30 minutes to prepare a composition A for forming a bonding adhesive layer.

(貼合黏著劑層A之製造) (Production of laminating adhesive layer A)

於藉由聚矽氧處理將聚對苯二甲酸乙二酯製膜之單面進行剝離處理而成的剝離膜(琳得科(Lintec)公司製造之「SP-PET381031」，厚度38μm)之剝離處理面，塗敷前述貼合黏著劑層形成用組成物A，於100℃加熱乾燥1分鐘，藉此製造厚度20μm之貼合黏著劑層A。 Peeling of a release film ("SP-PET381031" manufactured by Lintec, thickness 38 μm) made by peeling one side of a polyethylene terephthalate film through polysiloxane treatment On the treated surface, the aforementioned composition A for forming a bonding adhesive layer was applied and heated and dried at 100° C. for 1 minute to produce a bonding adhesive layer A with a thickness of 20 μm.

(黏著劑層形成用組成物B之製造) (Production of composition B for adhesive layer formation)

製備對由BA 74質量份、MMA 20質量份及HEA 6質量份所構成之丙烯酸系共聚物加成2-甲基丙烯醯氧基乙基異氰酸酯(相對於HEA而為約50莫耳%)而成的樹脂之溶液(黏著劑主劑，固形物為35質量%)。相對於該黏著劑主劑100質量份，添加作為交聯劑之甲苯二異氰酸酯(東洋化學(Toyo-Chem)股份有限公司製造，製品名「BHS-8515」，固形物濃度：37.5%)0.5質量份，進行30分鐘攪拌而製備黏著劑層形成用組成物B。 Preparation: 2-methacryloxyethyl isocyanate (about 50 mol% relative to HEA) was added to an acrylic copolymer consisting of 74 parts by mass of BA, 20 parts by mass of MMA, and 6 parts by mass of HEA. The resulting resin solution (adhesive main agent, solid content is 35% by mass). To 100 parts by mass of the main adhesive agent, 0.5 mass parts of toluene diisocyanate (manufactured by Toyo-Chem Co., Ltd., product name "BHS-8515", solid concentration: 37.5%) was added as a cross-linking agent. portion and stirred for 30 minutes to prepare composition B for forming an adhesive layer.

(黏著劑層B之製造) (Manufacture of adhesive layer B)

於藉由聚矽氧處理將聚對苯二甲酸乙二酯製膜之單面進行剝離處理而成的剝離膜(琳得科(Lintcc)公司製造之「SP-PET381031」，厚度38μm)之剝離處理面，塗敷前述黏著劑層形成用組成物B，於100℃加熱乾燥1分鐘，藉此製造厚度20μm之黏著劑層B。 Peeling of a release film ("SP-PET381031" manufactured by Lintcc Co., Ltd., thickness 38 μm) made by peeling one side of a polyethylene terephthalate film through polysiloxane treatment The above-mentioned composition B for forming an adhesive layer was applied to the treated surface, and the adhesive layer B was heated and dried at 100° C. for 1 minute to produce an adhesive layer B with a thickness of 20 μm.

(嵌埋層形成用組成物A之製造) (Production of embedded layer forming composition A)

添加由BA 90質量份及AAc 10質量份所構成之丙烯酸系共聚物(重量平均分子量(Mw)400,000)之溶液(固形物為33.6質量%)100質量份、對由BA 62質量份及MMA 10質量份以及HEA 28質量份所構成之丙烯酸系共聚物以相對於HEA 100mol%而加成率成為80mol%之方式加成2-甲基丙烯醯氧基乙 基異氰酸酯而成的樹脂(平均重量分子量(Mw)100,000)之溶液(固形物為45質量%)50質量份、以及作為交聯劑之甲苯二異氰酸酯(東洋化學(Toyo-Chem)股份有限公司製造，製品名「BHS-8515」，固形物濃度：37.5%)2.5質量份，攪拌30分鐘而製備嵌埋層形成用組成物A。 100 parts by mass of a solution of an acrylic copolymer (weight average molecular weight (Mw) 400,000) (solid content: 33.6 mass %) consisting of 90 parts by mass of BA and 10 parts by mass of AAc was added, and 62 parts by mass of BA and 10 parts by mass of MMA were added. 2-methacryloxyethyl was added to an acrylic copolymer consisting of 28 parts by mass and 28 parts by mass of HEA so that the addition rate became 80 mol% relative to 100 mol% of HEA. 50 parts by mass of a solution (solid content: 45% by mass) of a resin made of isocyanate (average molecular weight (Mw) 100,000), and toluene diisocyanate as a cross-linking agent (manufactured by Toyo-Chem Co., Ltd. , product name "BHS-8515", solid content concentration: 37.5%) 2.5 parts by mass, and stirred for 30 minutes to prepare a composition A for forming an embedded layer.

(嵌埋層形成用組成物B之製造) (Production of embedded layer forming composition B)

添加由BA 90質量份及AAc 10質量份所構成之丙烯酸系共聚物(重量平均分子量(Mw)400,000)33.6質量份、作為溶劑之乙基甲基酮66.4質量份、以及作為交聯劑之多元環氧化合物(三菱瓦斯化學股份有限公司製造，製品名「TETRAD-C」)0.2質量份，進行30分鐘攪拌而製備嵌埋層形成用組成物B。 33.6 parts by mass of an acrylic copolymer (weight average molecular weight (Mw) 400,000) consisting of 90 parts by mass of BA and 10 parts by mass of AAc, 66.4 parts by mass of ethyl methyl ketone as a solvent, and polyvinyl alcohol as a cross-linking agent were added 0.2 parts by mass of an epoxy compound (manufactured by Mitsubishi Gas Chemical Co., Ltd., product name "TETRAD-C") was stirred for 30 minutes to prepare a composition B for forming an embedded layer.

(基材) (Substrate)

將聚對苯二甲酸乙二酯(PET)膜(製品名「Cosmoshine A4100」，厚度50μm，東洋紡公司製造)用於基材11。 A polyethylene terephthalate (PET) film (product name "Cosmoshine A4100", thickness 50 μm, manufactured by Toyobo Co., Ltd.) was used as the base material 11 .

(附端子之半導體裝置之準備) (Preparation of semiconductor device with terminals)

於評價實施例及比較例之端子保護用膠帶之嵌埋性時，準備以下之附端子之半導體裝置。 To evaluate the embedding properties of the terminal protective tapes of Examples and Comparative Examples, the following semiconductor devices with terminals were prepared.

．附端子之半導體裝置(1) ． Semiconductor device with terminals(1)

半導體裝置之大小：10mm×10mm Semiconductor device size: 10mm×10mm

端子之高度：200μm Terminal height: 200μm

端子徑：250μm Terminal diameter: 250μm

端子間之間距：400μm Spacing between terminals: 400μm

端子之個數：10×10=100個 Number of terminals: 10×10=100

．附端子之半導體裝置(2) ． Semiconductor device with terminals(2)

半導體裝置之大小：10mm×10mm Semiconductor device size: 10mm×10mm

端子之高度：100μm Terminal height: 100μm

端子徑：250μm Terminal diameter: 250μm

端子間之間距：400μm Spacing between terminals: 400μm

端子之個數：10×10=100個 Number of terminals: 10×10=100

<嵌埋性評價> <Evaluation of embeddedness>

將圖3之形態的端子保護用膠帶3的貼合黏著劑層15側之剝離膜22剝離，並接著於SUS(Stainless Steel；不銹鋼)板30上，製作圖4之形態的嵌埋性評價用之試樣，將黏著劑層14側之剝離膜20剝離，以該SUS板30之側為下而設置於溫度經調節為50℃之加熱板上。繼而，如圖5(a)般，以前述附端子之半導體裝置之端子之側為下，以壓製壓力(負重1.1MPa)、壓製時間40s、加熱溫度50℃而按壓於該黏彈性層12。對9個附端子之半導體裝置實施該嵌埋性評價。 The release film 22 on the adhesive layer 15 side of the terminal protective tape 3 shown in Figure 3 was peeled off, and then attached to the SUS (Stainless Steel; stainless steel) plate 30 to produce a test material for embedding property evaluation in the form shown in Figure 4 For the sample, the release film 20 on the adhesive layer 14 side was peeled off, and the SUS plate 30 side was placed on a hot plate whose temperature was adjusted to 50°C. Then, as shown in FIG. 5(a) , with the terminal side of the semiconductor device with terminals as the downward direction, the viscoelastic layer 12 was pressed with a pressing pressure (load 1.1 MPa), a pressing time of 40 s, and a heating temperature of 50°C. This embedding property evaluation was performed on nine semiconductor devices with terminals.

於剛壓製後，橫向觀察而確認嵌埋性，將所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到之情況評價為剛壓製後之嵌埋性良好(A)。將至少一個附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子之情況評價為剛壓製後之嵌埋性不良(B)。 Immediately after pressing, observe the embedding properties laterally and attach the lower side of all semiconductor devices with terminals to the terminal protection tape. If the terminals are hidden by the terminal protection tape and cannot be observed, the embedding property immediately after pressing is evaluated. Good buryability (A). When the lower side of at least one semiconductor device with terminals is raised from the terminal protection tape, and terminals can be observed between the terminal protection tape and the semiconductor device body, it is evaluated as poor embedding properties immediately after pressing (B).

然後，針對於常溫放置冷卻而經過1小時後之附端子之半導體裝置，橫向觀察而確認嵌埋性，將所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到之情況評價為壓製1小時後之嵌埋性良好(A)。將至少一個附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子之情況評價為壓製1小時後之嵌埋性不良(B)。 Then, the semiconductor devices with terminals that had been left to cool at room temperature for 1 hour were observed laterally to confirm the embedding properties. The lower sides of all the semiconductor devices with terminals were attached to terminal protection tape, and the terminals were hidden in the terminal protection tape. If the adhesive tape cannot be observed, the embedding property after pressing for 1 hour is considered to be good (A). When the lower side of at least one semiconductor device with terminals is lifted from the terminal protection tape and the terminals can be observed between the terminal protection tape and the semiconductor device body, it is evaluated as poor embedding property (B) after 1 hour of pressing. .

[實施例1] [Example 1]

<端子保護用膠帶之製造> <Manufacturing of terminal protection tape>

於藉由聚矽氧處理將聚對苯二甲酸乙二酯製膜之單面進行剝離處理而成的剝離膜(琳得科(Lintec)公司製造之「SP-PET381031」，厚度38μm)之剝離處理面塗敷嵌埋層形成用組成物A，於100℃加熱乾燥1分鐘後，於嵌埋層形成用組成物A之上層壓藉由聚矽氧處理將聚對苯二甲酸乙二酯製膜之單面進行剝離處理而成的剝離膜(琳得科(Lintec)公司製造之「SP-PET382150」，厚度38μm)之剝離處理面，製造厚度50μm之嵌埋層。 Peeling of a release film ("SP-PET381031" manufactured by Lintec, thickness 38 μm) made by peeling one side of a polyethylene terephthalate film through polysiloxane treatment The treated surface is coated with the embedding layer forming composition A, and after heating and drying at 100°C for 1 minute, the embedding layer forming composition A is laminated onto the treated surface. Polyethylene terephthalate is treated with polysiloxane. A peel-off film ("SP-PET382150" manufactured by Lintec, thickness 38 μm) was peeled off on one side of the film to produce an embedded layer with a thickness of 50 μm.

將前述嵌埋層中的將所層壓之剝離膜剝去的面彼此貼合，製作厚度100μm之嵌埋層。同樣地將嵌埋層貼合而積層，製作厚度300μm之嵌埋層A。 The surfaces of the embedding layers from which the laminated release films were peeled off were bonded together to prepare an embedding layer with a thickness of 100 μm. The embedded layers were bonded and laminated in the same manner to prepare an embedded layer A with a thickness of 300 μm.

於厚度20μm之黏著劑層B貼合厚度300μm之嵌埋層A，製造具有圖1所示之形態的厚度320μm之黏彈性層12的實施例1之端子保護用膠帶1。 The 300 μm thick embedding layer A was bonded to the 20 μm thick adhesive layer B to produce the terminal protection tape 1 of Example 1 having the 320 μm thick viscoelastic layer 12 in the form shown in FIG. 1 .

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

將該實施例1之端子保護用膠帶1中之兩剝離膜剝離，將厚度320μm之黏彈性層12積層三層，藉此形成厚度960μm之黏彈性層。由該黏彈性層製作直徑8mm、厚度960μm之圓柱形狀之評價用試樣，將該試樣設置於剪切黏度測定裝置。此時，於測定裝置之設置部位載置前述試樣，自試樣之上表面按壓測定夾具，由此將試樣固定並設置於前述設置部位。 The two release films in the terminal protective tape 1 of Example 1 were peeled off, and three viscoelastic layers 12 with a thickness of 320 μm were laminated to form a viscoelastic layer with a thickness of 960 μm. A cylindrical evaluation sample having a diameter of 8 mm and a thickness of 960 μm was prepared from the viscoelastic layer, and the sample was set in a shear viscosity measuring device. At this time, the sample is placed on the installation site of the measurement device, and the measurement jig is pressed from the upper surface of the sample to fix the sample and install it on the installation site.

以頻率：1Hz、升溫速度：10℃/min之測定條件，測定自室溫至100℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 The shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') from room temperature to 100°C were measured under the measurement conditions of frequency: 1Hz and heating rate: 10°C/min. Among them , calculate the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') at 25°C and 50°C. The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

將實施例1之端子保護用膠帶1的嵌埋層A之側之剝離膜剝離，與作為基材之聚對苯二甲酸乙二酯(PET)膜(製品名「Cosmoshine A4100」，厚度50μm，東洋紡公司製造)之易接著處理側貼合，製造圖2所示的具有基材11 /嵌埋層13/黏著劑層14之形態的黏彈性層12的實施例1之端子保護用膠帶2。 Peel off the release film on the embedded layer A side of the terminal protective tape 1 of Example 1, and use it as a base material with a polyethylene terephthalate (PET) film (product name "Cosmoshine A4100", thickness 50 μm, (manufactured by Toyobo Co., Ltd.) is bonded on the easy-adhesion side to produce the base material 11 shown in Figure 2 The terminal protection tape 2 of Example 1 has the viscoelastic layer 12 in the form of /embedded layer 13/adhesive layer 14.

進而，於實施例1之端子保護用膠帶2之基材中的與嵌埋層A相反之側積層前述貼合黏著劑層A，製造具有圖3所示之形態的黏彈性層12的實施例1之端子保護用膠帶3。 Furthermore, the above-mentioned bonding adhesive layer A is laminated on the side opposite to the embedded layer A in the base material of the terminal protective tape 2 of Example 1 to produce an embodiment of the viscoelastic layer 12 having the form shown in FIG. 3 1. Terminal protection tape 3.

將實施例1之端子保護用膠帶3的貼合黏著劑層A之側之剝離膜剝離，並接著於SUS板上，製作圖4之形態的嵌埋性評價用之試樣，將黏著劑層B之側之剝離膜剝離，以該SUS板之側為下而設置於溫度經調節為50℃之加熱板上。繼而，如圖5(a)般，以端子之高度為h0=200μm的前述附端子之半導體裝置(1)之端子之側為下，以壓製壓力(負重1.1MPa)、壓製時間40s、加熱溫度50℃而按壓於實施例1之端子保護用膠帶3。對9個附端子之半導體裝置實施該嵌埋性評價。黏彈性層12之厚度d1(μm)與端子之高度h0(μm)之比(d1/h0)為1.6。 Peel off the release film on the adhesive layer A side of the terminal protective tape 3 of Example 1 and attach it to the SUS board to prepare a sample for embedding property evaluation in the form shown in Figure 4, and remove the adhesive layer. The release film on side B was peeled off, and the SUS plate was placed on a hot plate whose temperature was adjusted to 50° C. with the side of the SUS plate facing down. Then, as shown in Figure 5(a), with the terminal side of the aforementioned semiconductor device (1) with terminals (1) having a terminal height of h0 = 200 μm as the bottom, the pressing pressure (load 1.1 MPa), pressing time 40 s, and heating temperature 50° C. and pressed onto the terminal protection tape 3 of Example 1. This embedding property evaluation was performed on nine semiconductor devices with terminals. The ratio (d1/h0) of the thickness d1 (μm) of the viscoelastic layer 12 to the height h0 (μm) of the terminal is 1.6.

於剛壓製後，橫向觀察而確認嵌埋性，結果所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(剛壓製後之嵌埋性良好(A))。將結果示於表1。 Immediately after pressing, the embedding properties were confirmed by horizontal observation. As a result, the bottom side of all semiconductor devices with terminals was attached to the terminal protection tape. The terminals were hidden in the terminal protection tape and could not be observed (the embedding properties immediately after pressing were good). (A)). The results are shown in Table 1.

然後，針對於常溫放置冷卻而經過1小時後之附端子之半導體裝置，橫向觀察而確認嵌埋性，結果如圖5(b)般，所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(壓製1小時後之嵌埋性良好(A))。將結果示於表1。 Then, the semiconductor devices with terminals that had been left to cool at room temperature for 1 hour were observed laterally to confirm the embedding properties. As shown in Figure 5(b), the lower side of all semiconductor devices with terminals was connected to the terminal protection Tape, the terminal is hidden in the terminal protection tape and cannot be seen (embedding property after pressing for 1 hour is good (A)). The results are shown in Table 1.

[實施例2] [Example 2]

<端子保護用膠帶之製造> <Manufacturing of terminal protection tape>

變更嵌埋層A之厚度，除此以外，以與實施例1相同之方式於剝離膜之剝離處理面製造厚度470μm之嵌埋層A。 Except for changing the thickness of the embedding layer A, the embedding layer A with a thickness of 470 μm was produced on the release-treated surface of the release film in the same manner as in Example 1.

於厚度20μm之黏著劑層B積層厚度470μm之嵌埋層A，製造具有圖1所示之形態的厚度490μm之黏彈性層12的實施例2之端子保護用膠帶1。 An embedding layer A with a thickness of 470 μm was laminated on the adhesive layer B with a thickness of 20 μm to produce the terminal protection tape 1 of Example 2 having a viscoelastic layer 12 with a thickness of 490 μm in the form shown in FIG. 1 .

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

繼而，將該實施例2之端子保護用膠帶1中之兩剝離膜剝離，將厚度490μm之黏彈性層12積層兩片，藉此形成厚度980μm之黏彈性層。繼而，以與實施例1相同之方式，對實施例2之端子保護用膠帶1中之黏彈性層12測定剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 Then, the two peeling films in the terminal protection tape 1 of Example 2 were peeled off, and two viscoelastic layers 12 with a thickness of 490 μm were laminated to form a viscoelastic layer with a thickness of 980 μm. Then, in the same manner as in Example 1, the shear storage elastic modulus G′ and tan δ (loss elastic modulus G″/storage elastic modulus) were measured for the viscoelastic layer 12 in the terminal protective tape 1 of Example 2. G'). Among them, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') at 25°C and 50°C are calculated. The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

以與實施例1相同之方式，使用實施例2之端子保護用膠帶1，製造具有圖2所示之形態的黏彈性層12的實施例2之端子保護用膠帶2。 In the same manner as in Example 1, the terminal protective tape 1 of Example 2 was used to produce the terminal protective tape 2 of Example 2 having the viscoelastic layer 12 in the form shown in FIG. 2 .

進而，以與實施例1相同之方式，使用實施例2之端子保護用膠帶2，製造具有圖3所示之形態的黏彈性層12的實施例2之端子保護用膠帶3。 Furthermore, in the same manner as in Example 1, the terminal protective tape 2 of Example 2 was used to produce the terminal protective tape 3 of Example 2 having the viscoelastic layer 12 in the form shown in FIG. 3 .

針對實施例2之端子保護用膠帶3，使用端子之高度為h0=100μm的前述附端子之半導體裝置(2)，確認剛壓製後之嵌埋性((d1/h0)為4.9)，結果如圖5(b)般，所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(剛壓製後之嵌埋性良好(A))。將結果示於表1。另外，確認壓製1小時後之嵌埋性，結果如圖5(b)般，所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(壓製1小時後之嵌埋性良好(A))。將結果示於表1。 Regarding the terminal protection tape 3 of Example 2, the aforementioned semiconductor device with terminals (2) having a terminal height of h0 = 100 μm was used to confirm the embedding property ((d1/h0) of 4.9) immediately after pressing. The results are as follows As shown in Figure 5(b), the lower side of all semiconductor devices with terminals is attached to the terminal protection tape, and the terminals are hidden by the terminal protection tape and cannot be observed (embedding properties immediately after pressing are good (A)). The results are shown in Table 1. In addition, the embedding properties after pressing for 1 hour were confirmed. As shown in Figure 5(b), the lower side of all semiconductor devices with terminals was attached to the terminal protective tape, and the terminals were hidden in the terminal protective tape and could not be observed (pressed The embedding property after 1 hour is good (A)). The results are shown in Table 1.

[實施例3] [Example 3]

<端子保護用膠帶之製造> <Manufacturing of terminal protection tape>

變更嵌埋層A之厚度，除此以外，以與實施例1相同之方式於剝離膜之剝離處理面製造厚度770μm之嵌埋層A。 Except for changing the thickness of the embedding layer A, the embedding layer A with a thickness of 770 μm was produced on the release-treated surface of the release film in the same manner as in Example 1.

於厚度20μm之黏著劑層B積層厚度770μm之嵌埋層A，製造具有圖1所示之形態的厚度790μm之黏彈性層12的實施例3之端子保護用膠帶1。 An embedding layer A with a thickness of 770 μm was laminated on the adhesive layer B with a thickness of 20 μm to produce the terminal protection tape 1 of Example 3 having a viscoelastic layer 12 with a thickness of 790 μm in the form shown in FIG. 1 .

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

繼而，將該實施例3之端子保護用膠帶1中之兩剝離膜剝離，以與實施例1相同之方式，對實施例3之端子保護用膠帶1中的厚度790μm之黏彈性層12測定剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 Then, the two peeling films in the terminal protective tape 1 of Example 3 were peeled off, and the shear strength of the viscoelastic layer 12 with a thickness of 790 μm in the terminal protective tape 1 of Example 3 was measured in the same manner as in Example 1. Shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G'). Among them, the shear storage elastic modulus G' and tan δ (loss elastic modulus G') at 25°C and 50°C are obtained. Amount G"/storage elastic modulus G'). The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

以與實施例1相同之方式，使用實施例3之端子保護用膠帶1，製造具有圖2所示之形態的黏彈性層12的實施例3之端子保護用膠帶2。 In the same manner as in Example 1, the terminal protective tape 1 of Example 3 was used to produce the terminal protective tape 2 of Example 3 having the viscoelastic layer 12 in the form shown in FIG. 2 .

進而，以與實施例1相同之方式，使用實施例3之端子保護用膠帶2，製造具有圖3所示之形態的黏彈性層12的實施例3之端子保護用膠帶3。 Furthermore, in the same manner as in Example 1, the terminal protective tape 2 of Example 3 was used to produce the terminal protective tape 3 of Example 3 having the viscoelastic layer 12 in the form shown in FIG. 3 .

針對實施例3之端子保護用膠帶3，使用端子之高度為h0=200μm的前述附端子之半導體裝置(1)，確認剛壓製後之嵌埋性((d1/h0)為4.0)，結果如圖5(b)般，所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(剛壓製後之嵌埋性良好(A))。另外，確認壓製1小時後之嵌埋性，結果如圖5(b)般，所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(壓製1小時後之嵌埋性良好(A))。將結果示於表1。 Regarding the terminal protection tape 3 of Example 3, the aforementioned semiconductor device (1) with terminals having a terminal height of h0 = 200 μm was used to confirm the embedding properties immediately after pressing ((d1/h0) was 4.0). The results are as follows: As shown in Figure 5(b), the lower side of all semiconductor devices with terminals is attached to the terminal protection tape, and the terminals are hidden by the terminal protection tape and cannot be observed (embedding properties immediately after pressing are good (A)). In addition, the embedding properties after pressing for 1 hour were confirmed. As shown in Figure 5(b), the lower side of all semiconductor devices with terminals was attached to the terminal protective tape, and the terminals were hidden in the terminal protective tape and could not be observed (pressed The embedding property after 1 hour is good (A)). The results are shown in Table 1.

[實施例4] [Example 4]

<端子保護用膠帶之製造> <Manufacturing of terminal protection tape>

變更嵌埋層A之厚度，除此以外，以與實施例1相同之方式於剝離膜之剝離處理面製造厚度120μm之嵌埋層A。 Except for changing the thickness of the embedding layer A, the embedding layer A with a thickness of 120 μm was produced in the same manner as in Example 1 on the release-treated surface of the release film.

於厚度20μm之黏著劑層B積層厚度120μm之嵌埋層A，製造具有圖1所示之形態的厚度140μm之黏彈性層12的實施例4之端子保護用膠帶1。 An embedding layer A with a thickness of 120 μm was laminated on the adhesive layer B with a thickness of 20 μm to produce a terminal protection tape 1 of Example 4 having a viscoelastic layer 12 with a thickness of 140 μm as shown in FIG. 1 .

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

繼而，將該實施例4之端子保護用膠帶1中之兩剝離膜剝離，將厚度140μm之黏彈性層12積層七片，藉此形成厚度980μm之黏彈性層。繼而，以與實施例1相同之方式，對實施例4之端子保護用膠帶1中之黏彈性層12測定剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 Then, the two peeling films of the terminal protection tape 1 of Example 4 were peeled off, and seven pieces of the viscoelastic layer 12 with a thickness of 140 μm were laminated, thereby forming a viscoelastic layer with a thickness of 980 μm. Then, in the same manner as in Example 1, the shear storage elastic modulus G′ and tan δ (loss elastic modulus G″/storage elastic modulus) were measured for the viscoelastic layer 12 in the terminal protective tape 1 of Example 4. G'). Among them, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') at 25°C and 50°C are calculated. The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

以與實施例1相同之方式，使用實施例4之端子保護用膠帶1，製造具有圖2所示之形態的黏彈性層12的實施例4之端子保護用膠帶2。 In the same manner as Example 1, the terminal protective tape 1 of Example 4 was used to produce the terminal protective tape 2 of Example 4 having the viscoelastic layer 12 in the form shown in FIG. 2 .

進而，以與實施例1相同之方式，使用實施例4之端子保護用膠帶2，製造具有圖3所示之形態的黏彈性層12的實施例4之端子保護用膠帶3。 Furthermore, in the same manner as in Example 1, the terminal protective tape 2 of Example 4 was used to produce the terminal protective tape 3 of Example 4 having the viscoelastic layer 12 in the form shown in FIG. 3 .

針對實施例4之端子保護用膠帶3，使用端子之高度為h0=100μm之前述附端子之半導體裝置(2)，確認剛壓製後之嵌埋性((d1/h0)為1.4)，結果如圖5(b)般，所有附端子之半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(剛壓製後之嵌埋性良好(A))。另外，確認壓製1小時後之嵌埋性，結果如圖5(b)般，所有附端子之 半導體裝置之下側面接著於端子保護用膠帶，端子隱蔽於端子保護用膠帶而無法觀察到(壓製1小時後之嵌埋性良好(A))。將結果示於表1。 Regarding the terminal protection tape 3 of Example 4, the semiconductor device (2) with the terminals having the height of h0 = 100 μm was used to confirm the embedding properties immediately after pressing ((d1/h0) was 1.4). The results are as follows: As shown in Figure 5(b), the lower side of all semiconductor devices with terminals is attached to the terminal protection tape, and the terminals are hidden by the terminal protection tape and cannot be observed (embedding properties immediately after pressing are good (A)). In addition, the embedding properties were confirmed after pressing for 1 hour. The results were as shown in Figure 5(b). The lower side of the semiconductor device was adhered to the terminal protection tape, and the terminals were hidden by the terminal protection tape and could not be observed (embedding property after pressing for 1 hour was good (A)). The results are shown in Table 1.

[比較例1] [Comparative example 1]

<端子保護用膠帶> <Terminal protection tape>

將厚度20μm之黏著劑層B用作比較例1之端子保護用膠帶。 The adhesive layer B with a thickness of 20 μm was used as the terminal protection tape of Comparative Example 1.

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

將厚度20μm之黏著劑層B積層多片，藉此形成厚度1000μm之黏彈性層。由該黏彈性層製作直徑8mm、厚度1000μm之圓柱形狀之評價用試樣，使用該試樣，以與實施例1相同之方式測定剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 A plurality of adhesive layers B with a thickness of 20 μm were laminated to form a viscoelastic layer with a thickness of 1000 μm. A cylindrical evaluation sample with a diameter of 8 mm and a thickness of 1000 μm was prepared from the viscoelastic layer. Using this sample, the shear storage elastic modulus G' and tan δ (loss elastic modulus G were measured in the same manner as in Example 1 "/storage elastic modulus G'). Among them, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') at 25°C and 50°C are obtained. The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

將厚度20μm之黏著劑層B積層於前述基材A之易接著處理面之側，於該基材A中的與黏著劑層B相反之側積層前述貼合黏著劑層A，製造比較例1之端子保護用膠帶。 The adhesive layer B with a thickness of 20 μm was laminated on the side of the easy-to-adhesion surface of the aforementioned base material A, and the aforementioned bonding adhesive layer A was laminated on the opposite side of the base material A to the adhesive layer B to produce Comparative Example 1. Terminal protection tape.

將比較例1之端子保護用膠帶的貼合黏著劑層A之側之剝離膜剝離，並接著於SUS板上後，將黏著劑層B之側之剝離膜剝離，以該SUS板之側為下而設置於溫度經調節為50℃之加熱板上。繼而，如圖7(a)般，以端子之高度為h0=200μm的前述附端子之半導體裝置(1)之端子之側為下，以1.1MPa之壓製壓力、壓製時間40s、加熱溫度50℃而按壓於比較例1之端子保護用膠帶。對9個附端子之半導體裝置實施該嵌埋性評價。黏彈性層之厚度d1(μm)與端子之高度h0(μm)之比(d1/h0)為0.1。 Peel off the release film on the side of the adhesive layer A of the terminal protection tape of Comparative Example 1 and stick it on the SUS board. Then peel off the release film on the side of the adhesive layer B. The side of the SUS board is and placed on a heating plate whose temperature was adjusted to 50°C. Then, as shown in Figure 7(a), with the terminal side of the aforementioned semiconductor device (1) with terminals (1) having a terminal height of h0 = 200 μm as the bottom, a pressing pressure of 1.1 MPa, a pressing time of 40 s, and a heating temperature of 50°C were used. And press the terminal protection tape of Comparative Example 1. This embedding property evaluation was performed on nine semiconductor devices with terminals. The ratio (d1/h0) of the thickness d1 (μm) of the viscoelastic layer to the height h0 (μm) of the terminal is 0.1.

於剛壓製後，橫向觀察而確認嵌埋性，結果如圖7(b)般，所有附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠 帶與半導體裝置本體之間可觀察到端子(剛壓製後之嵌埋性不良(B))。將結果示於表1。 Immediately after pressing, the embedding properties were confirmed by horizontal observation. As shown in Figure 7(b), the bottom side of all semiconductor devices with terminals floated from the terminal protection tape, and the terminal protection tape was removed from the terminal protection tape. Terminals can be observed between the tape and the semiconductor device body (embedding failure immediately after pressing (B)). The results are shown in Table 1.

然後，針對於常溫放置冷卻而經過1小時後之附端子之半導體裝置，橫向觀察而確認嵌埋性，結果如圖7(b)般，所有附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子(壓製1小時後之嵌埋性不良(B))。 Then, the semiconductor devices with terminals that had been left to cool at room temperature for 1 hour were observed laterally to confirm the embedding properties. As shown in Figure 7(b), the bottom side of all semiconductor devices with terminals was removed from the terminal protection tape. It floated, and the terminal was observed between the terminal protection tape and the semiconductor device body (embedding defect after 1 hour of pressing (B)).

[比較例2] [Comparative example 2]

<端子保護用膠帶之製造> <Manufacturing of terminal protection tape>

於藉由聚矽氧處理將聚對苯二甲酸乙二酯製膜之單面進行剝離處理而成的剝離膜(琳得科(Lintec)公司製造之「SP-PET381031」，厚度38μm)之剝離處理面，塗敷上述所得之嵌埋層形成用組成物B，於120℃加熱乾燥2分鐘，藉此製造厚度300μm之嵌埋層B。 Peeling of a release film ("SP-PET381031" manufactured by Lintec, thickness 38 μm) made by peeling one side of a polyethylene terephthalate film through polysiloxane treatment The embedding layer forming composition B obtained above was applied to the treated surface, and the embedding layer B was heated and dried at 120° C. for 2 minutes to produce an embedding layer B with a thickness of 300 μm.

於厚度20μm之黏著劑層B積層厚度300μm之嵌埋層B，製造具有圖1所示之形態的厚度320μm之黏彈性層12的比較例2之端子保護用膠帶1。 An embedding layer B with a thickness of 300 μm was laminated on an adhesive layer B with a thickness of 20 μm to produce a terminal protection tape 1 of Comparative Example 2 having a viscoelastic layer 12 with a thickness of 320 μm as shown in FIG. 1 .

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

繼而，將該比較例2之端子保護用膠帶1中之兩剝離膜剝離，將厚度320μm之黏彈性層12積層多片，藉此形成厚度960μm之黏彈性層。繼而，以與實施例1相同之方式，對比較例2之端子保護用膠帶1中之黏彈性層12測定剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 Next, the two peeling films of the terminal protective tape 1 of Comparative Example 2 were peeled off, and a plurality of viscoelastic layers 12 with a thickness of 320 μm were laminated to form a viscoelastic layer with a thickness of 960 μm. Then, in the same manner as in Example 1, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus were measured compared with the viscoelastic layer 12 in the terminal protective tape 1 of Comparative Example 2. G'). Among them, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') at 25°C and 50°C are calculated. The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

將比較例2之端子保護用膠帶1的嵌埋層B之側之剝離膜剝離，積層於前述基材A之易接著處理之側，於該基材A中的與嵌埋層B相反之側積層前述貼合黏著劑層A，製造圖3所示之形態的比較例2之端子保護用膠帶3。 Peel off the release film on the side of the embedded layer B of the terminal protective tape 1 of Comparative Example 2, and laminate it on the side of the base material A that is easy to be bonded, and on the side of the base material A opposite to the embedded layer B. The above-mentioned bonding adhesive layer A was laminated to produce the terminal protection tape 3 of Comparative Example 2 having the form shown in FIG. 3 .

將比較例2之端子保護用膠帶3的貼合黏著劑層A之側之剝離膜剝離，並接著於SUS板上，製作圖4之形態的嵌埋性評價用之試樣，將黏著劑層B之側之剝離膜剝離，以該SUS板之側為下而設置於溫度經調節為50℃之加熱板上。繼而，以端子之高度為h0=200μm的前述附端子之半導體裝置(1)之端子之側為下，以1.1MPa之壓製壓力、壓製時間40s、加熱溫度50℃而按壓於比較例2之端子保護用膠帶3。對9個附端子之半導體裝置實施該嵌埋性評價。黏彈性層之厚度d1(μm)與端子之高度h0(μm)之比(d1/h0)為1.6。 Peel off the release film on the adhesive layer A side of the terminal protective tape 3 of Comparative Example 2 and attach it to the SUS board to prepare a sample for embedding property evaluation in the form shown in Figure 4, and remove the adhesive layer. The release film on side B was peeled off, and the SUS plate was placed on a hot plate whose temperature was adjusted to 50° C. with the side of the SUS plate facing down. Then, with the terminal side of the aforementioned semiconductor device with terminals (1) having a terminal height h0 = 200 μm as the downward direction, the terminals of Comparative Example 2 were pressed with a pressing pressure of 1.1 MPa, a pressing time of 40 s, and a heating temperature of 50°C. Protective tape 3. This embedding property evaluation was performed on nine semiconductor devices with terminals. The ratio (d1/h0) of the thickness d1 (μm) of the viscoelastic layer to the height h0 (μm) of the terminal is 1.6.

於剛壓製後，橫向觀察而確認嵌埋性，結果所有附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子(剛壓製後之嵌埋性不良(B))。將結果示於表1。 Immediately after pressing, the embedding properties were confirmed by horizontal observation. As a result, the lower side of all the semiconductor devices with terminals floated from the terminal protection tape, and the terminals could be observed between the terminal protection tape and the semiconductor device body (just after pressing). Poor embeddedness (B)). The results are shown in Table 1.

然後，針對於常溫放置冷卻而經過1小時後之附端子之半導體裝置，橫向觀察而確認嵌埋性，結果所有附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子(剛壓製後之嵌埋性不良(B))。將結果示於表1。 Then, the semiconductor devices with terminals that had been left to cool at room temperature for 1 hour were observed laterally to confirm the embedding properties. As a result, the lower sides of all the semiconductor devices with terminals were lifted from the terminal protection tape, and the bottom side of the terminal protection tape was lifted from the terminal protection tape. Terminals can be observed between the semiconductor device body (embedding defect immediately after pressing (B)). The results are shown in Table 1.

[比較例3] [Comparative example 3]

<端子保護用膠帶之製造> <Manufacturing of terminal protection tape>

於藉由聚矽氧處理將聚對苯二甲酸乙二酯製膜之單面進行剝離處理而成的剝離膜(琳得科(Lintec)公司製造之「SP-PET381031」，厚度38μm)之剝離處理面，塗敷上述所得之嵌埋層形成用組成物B，於120℃加熱乾燥2分鐘，藉此製造厚度150μm之嵌埋層B。 Peeling of a release film ("SP-PET381031" manufactured by Lintec, thickness 38 μm) made by peeling one side of a polyethylene terephthalate film through polysiloxane treatment The embedding layer forming composition B obtained above was applied to the treated surface, and the embedding layer B was heated and dried at 120° C. for 2 minutes to produce an embedding layer B with a thickness of 150 μm.

於厚度20μm之黏著劑層B積層厚度150μm之嵌埋層B，製造具有圖1所示之形態的厚度170μm之黏彈性層12的比較例3之端子保護用膠帶1。 An embedding layer B with a thickness of 150 μm was laminated on the adhesive layer B with a thickness of 20 μm to produce a terminal protection tape 1 of Comparative Example 3 having a viscoelastic layer 12 with a thickness of 170 μm as shown in FIG. 1 .

<黏彈性層之剪切儲存彈性模量測定> <Measurement of shear storage elastic modulus of viscoelastic layer>

繼而，將該比較例3之端子保護用膠帶1中之兩剝離膜剝離，將厚度170μm之黏彈性層12積層多片，藉此形成厚度1020μm之黏彈性層。繼而，以與實施例1相同之方式，對比較例3之端子保護用膠帶1中之黏彈性層12測定剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。其中，求出於25℃及50℃之剪切儲存彈性模量G’及tanδ(損失彈性模量G”/儲存彈性模量G’)。將結果示於表1。 Next, the two peeling films of the terminal protective tape 1 of Comparative Example 3 were peeled off, and a plurality of viscoelastic layers 12 with a thickness of 170 μm were laminated to form a viscoelastic layer with a thickness of 1020 μm. Then, in the same manner as in Example 1, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus were measured against the viscoelastic layer 12 in the terminal protective tape 1 of Comparative Example 3. G'). Among them, the shear storage elastic modulus G' and tan δ (loss elastic modulus G"/storage elastic modulus G') at 25°C and 50°C are calculated. The results are shown in Table 1.

<嵌埋性評價> <Evaluation of embeddedness>

將比較例3之端子保護用膠帶1的嵌埋層B之側之剝離膜剝離，積層於前述基材A之易接著處理面之側，於該基材A中的與嵌埋層相反之側積層前述貼合黏著劑層A，製造圖3所示之形態的比較例3之端子保護用膠帶3。 Peel off the release film on the side of the embedded layer B of the terminal protective tape 1 of Comparative Example 3, and laminate it on the side of the easy-adhesion surface of the aforementioned base material A, on the side opposite to the embedded layer in the base material A. The above-mentioned bonding adhesive layer A was laminated to produce the terminal protection tape 3 of Comparative Example 3 having the form shown in FIG. 3 .

將比較例3之端子保護用膠帶3的貼合黏著劑層A之側之剝離膜剝離，並接著於SUS板上，製作圖4之形態的嵌埋性評價用之試樣，將黏著劑層B之側之剝離膜剝離，以該SUS板之側為下而設置於溫度經調節為50℃之加熱板上。繼而，以端子之高度為h0=200μm的前述附端子之半導體裝置(1)之端子之側為下，以1.1MPa之壓製壓力、壓製時間40s、加熱溫度50℃而按壓於比較例3之端子保護用膠帶3。對9個附端子之半導體裝置實施該嵌埋性評價。黏彈性層之厚度d1(μm)與端子之高度h0(μm)之比(d1/h0)為0.9。 Peel off the release film on the adhesive layer A side of the terminal protective tape 3 of Comparative Example 3 and attach it to the SUS board to prepare a sample for embedding property evaluation in the form shown in Figure 4, and remove the adhesive layer. The release film on side B was peeled off, and the SUS plate was placed on a hot plate whose temperature was adjusted to 50° C. with the side of the SUS plate facing down. Then, with the terminal side of the aforementioned semiconductor device with terminals (1) having a terminal height h0 = 200 μm as the downward direction, the terminals of Comparative Example 3 were pressed with a pressing pressure of 1.1 MPa, a pressing time of 40 seconds, and a heating temperature of 50°C. Protective tape 3. This embedding property evaluation was performed on nine semiconductor devices with terminals. The ratio (d1/h0) of the thickness d1 (μm) of the viscoelastic layer to the height h0 (μm) of the terminal is 0.9.

於剛壓製後，橫向觀察而確認嵌埋性，結果所有附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子(剛壓製後之嵌埋性不良(B))。將結果示於表1。 Immediately after pressing, the embedding properties were confirmed by horizontal observation. As a result, the lower side of all the semiconductor devices with terminals floated from the terminal protection tape, and the terminals could be observed between the terminal protection tape and the semiconductor device body (just after pressing). Poor embeddedness (B)). The results are shown in Table 1.

然後，針對於常溫放置冷卻而經過1小時後之附端子之半導體裝置，橫向觀察而確認嵌埋性，結果所有附端子之半導體裝置之下側面自端子保護用膠帶浮起，於端子保護用膠帶與半導體裝置本體之間可觀察到端子(剛壓製後之嵌埋性不良(B))。將結果示於表1。 Then, the semiconductor devices with terminals that had been left to cool at room temperature for 1 hour were observed laterally to confirm the embedding properties. As a result, the lower sides of all the semiconductor devices with terminals were lifted from the terminal protection tape, and the bottom side of the terminal protection tape was lifted from the terminal protection tape. Terminals can be observed between the semiconductor device body (embedding defect immediately after pressing (B)). The results are shown in Table 1.

Figure 108128195-A0305-02-0059-1
Figure 108128195-A0305-02-0059-1

根據表1所示之結果，於使用本實施形態之實施例之端子保護用膠帶對附端子之半導體裝置進行電磁波屏蔽時，於黏彈性層之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，前述黏彈性層之厚度為80μm至800μm，故而可將容易產生浮起之凸塊埋設於黏彈性層12，可使半導體裝置之端子形成面密接於黏彈性層。結果，可防止作為端子電極之凸塊與電磁波屏蔽膜電性短路，亦無需設置於步驟上繁雜之遮蔽部等。 According to the results shown in Table 1, when the terminal protective tape according to the example of this embodiment was used to shield a semiconductor device with terminals from electromagnetic waves, the value of tan δ at 50° C. was measured in the dynamic viscoelasticity of the viscoelastic layer. is 0.2 or above, and the thickness of the viscoelastic layer is 80 μm to 800 μm. Therefore, bumps that are prone to floating can be buried in the viscoelastic layer 12, and the terminal forming surface of the semiconductor device can be closely connected to the viscoelastic layer. As a result, it is possible to prevent the bumps serving as terminal electrodes from being electrically short-circuited with the electromagnetic wave shielding film, and there is no need to provide complicated shielding portions in steps.

(產業可利用性) (industrial availability)

本實施形態之端子保護用膠帶可用於在對附端子之半導體裝置進行電磁波屏蔽時，保護附端子之半導體裝置之端子的用途。可使用本實施形態之端子保護用膠帶對附端子之半導體裝置進行電磁波屏蔽，可製造附電磁波屏蔽膜之半導體裝置。 The terminal protection tape of this embodiment can be used to protect the terminals of the semiconductor device with terminals when shielding the semiconductor device with terminals from electromagnetic waves. The terminal protection tape of this embodiment can be used to shield a semiconductor device with terminals from electromagnetic waves, and a semiconductor device with an electromagnetic wave shielding film can be manufactured.

1:端子保護用膠帶 1: Tape for terminal protection

12:黏彈性層 12:Viscoelastic layer

13:嵌埋層 13: Embedded layer

14:黏著劑層 14: Adhesive layer

20、21:剝離膜 20, 21: peeling film

Claims (9)

一種端子保護用膠帶，係用於對附端子之半導體裝置形成電磁波屏蔽膜之步驟中；前述端子保護用膠帶具有黏彈性層，其中前述黏彈性層具有嵌埋層及黏著劑層；前述嵌埋層含有於作為丙烯酸系樹脂之黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a)、作為丙烯酸系樹脂之黏著性樹脂(1-1a)、以及交聯劑；前述黏著劑層含有於作為丙烯酸系樹脂之黏著性樹脂(I-1a)之側鏈導入有不飽和基的能量線硬化性之黏著性樹脂(1-2a)、以及交聯劑；於前述黏彈性層之動態黏彈性測定中，於50℃之tanδ之值為0.2以上，前述黏彈性層之厚度為80μm至800μm。 A terminal protection tape is used in the step of forming an electromagnetic wave shielding film for a semiconductor device with terminals; the terminal protection tape has a viscoelastic layer, wherein the viscoelastic layer has an embedding layer and an adhesive layer; the embedding The layer contains an energy-beam curable adhesive resin (1-2a) in which an unsaturated group is introduced into the side chain of an acrylic resin adhesive resin (I-1a), and an acrylic resin adhesive resin (1- 1a), and a cross-linking agent; the aforementioned adhesive layer contains an energy-ray curable adhesive resin (1-2a) in which an unsaturated group is introduced into the side chain of the adhesive resin (I-1a) which is an acrylic resin, and a cross-linking agent; in the dynamic viscoelasticity measurement of the aforementioned viscoelastic layer, the value of tan δ at 50°C is above 0.2, and the thickness of the aforementioned viscoelastic layer is 80 μm to 800 μm. 如請求項1所記載之端子保護用膠帶，其中前述黏彈性層於50℃之儲存彈性模量G’(50℃)(MPa)、前述端子之高度h0(μm)及前述黏彈性層之厚度d1(μm)滿足下述式(I)及式(2)：0.01MPa≦G’(50℃)≦15MPa…(I) 1.2≦d1/h0≦5.0…(2)。 The terminal protection tape as described in claim 1, wherein the storage elastic modulus G' (50°C) (MPa) of the aforementioned viscoelastic layer at 50°C, the height h0 (μm) of the aforementioned terminal, and the thickness of the aforementioned viscoelastic layer d1 (μm) satisfies the following formulas (I) and (2): 0.01MPa≦G'(50℃)≦15MPa…(I) 1.2≦d1/h0≦5.0…(2). 如請求項1所記載之端子保護用膠帶，其中前述黏彈性層於25℃之儲存彈性模量G’(25℃)(MPa)滿足下述式(3)；0.05MPa≦G’(25℃)≦20MPa…(3)。 The terminal protection tape described in claim 1, wherein the storage elastic modulus G' (25°C) (MPa) of the viscoelastic layer at 25°C satisfies the following formula (3); 0.05MPa≦G' (25°C )≦20MPa…(3). 如請求項2所記載之端子保護用膠帶，其中前述黏彈性層於25℃之儲存彈性模量G’(25℃)(MPa)滿足下述式(3)；0.05MPa≦G’(25℃)≦20MPa‧‧‧(3)。 The terminal protection tape described in claim 2, wherein the storage elastic modulus G' (25°C) (MPa) of the viscoelastic layer at 25°C satisfies the following formula (3); 0.05MPa≦G' (25°C )≦20MPa‧‧‧(3). 如請求項1至4中任一項所記載之端子保護用膠帶，其中前述嵌埋層中，前述黏著性樹脂(1-1a)相對於前述黏著性樹脂(1-2a)100質量份的含量為100質量份至200質量份。 The terminal protection tape according to any one of claims 1 to 4, wherein the content of the adhesive resin (1-1a) in the embedded layer is 100 parts by mass of the adhesive resin (1-2a). It is 100 parts by mass to 200 parts by mass. 如請求項5所記載之端子保護用膠帶，係依序具有前述黏著劑層、前述嵌埋層及基材。 The terminal protection tape described in claim 5 has the adhesive layer, the embedding layer and the base material in this order. 如請求項6所記載之端子保護用膠帶，係依序具有前述黏著劑層、前述嵌埋層、前述基材及第二黏著劑層之雙面膠帶。 The terminal protection tape described in claim 6 is a double-sided tape having the adhesive layer, the embedding layer, the base material and the second adhesive layer in this order. 一種附電磁波屏蔽膜之半導體裝置的製造方法，係包括：使前述附端子之半導體裝置之端子埋設於如請求項1至7中任一項所記載之端子保護用膠帶之前述黏彈性層的步驟；以及於未埋設於前述端子保護用膠帶之前述黏彈性層的前述附端子之半導體裝置之露出面形成電磁波屏蔽膜的步驟。 A method of manufacturing a semiconductor device with an electromagnetic wave shielding film, which includes the step of burying the terminals of the semiconductor device with terminals in the viscoelastic layer of the terminal protective tape according to any one of claims 1 to 7. ; and the step of forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals that is not embedded in the viscoelastic layer of the terminal protective tape. 一種附電磁波屏蔽膜之半導體裝置的製造方法，係包括：使附端子之半導體裝置集合體之端子埋設於如請求項1至7中任一項所記載之端子保護用膠帶之前述黏彈性層的步驟；將前述附端子之半導體裝置集合體切割，將前述附端子之半導體裝置集合體製成使端子埋設於前述端子保護用膠帶之前述黏彈性層的附端子之半導體裝置的步驟；以及於未埋設於前述端子保護用膠帶之前述黏彈性層的前述附端子之半導體裝置之露出面形成電磁波屏蔽膜的步驟。 A method of manufacturing a semiconductor device with an electromagnetic wave shielding film, which includes burying terminals of a semiconductor device assembly with terminals in the viscoelastic layer of a terminal protective tape according to any one of claims 1 to 7. Steps; cutting the semiconductor device assembly with terminals, forming the semiconductor device assembly with terminals into the semiconductor device with terminals of the viscoelastic layer before embedding the terminals in the terminal protective tape; and in the next step The step of forming an electromagnetic wave shielding film on the exposed surface of the semiconductor device with terminals embedded in the viscoelastic layer of the terminal protective tape.
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