TWI829844B - 處理方法及電漿處理裝置 - Google Patents
處理方法及電漿處理裝置 Download PDFInfo
- Publication number
- TWI829844B TWI829844B TW109100466A TW109100466A TWI829844B TW I829844 B TWI829844 B TW I829844B TW 109100466 A TW109100466 A TW 109100466A TW 109100466 A TW109100466 A TW 109100466A TW I829844 B TWI829844 B TW I829844B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- peripheral member
- edge ring
- plasma
- mentioned
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 57
- 238000003672 processing method Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims abstract description 99
- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims description 86
- 238000005530 etching Methods 0.000 claims description 56
- 238000012937 correction Methods 0.000 claims description 30
- 230000015654 memory Effects 0.000 claims description 15
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 17
- 235000012431 wafers Nutrition 0.000 description 55
- 239000007789 gas Substances 0.000 description 54
- 238000000151 deposition Methods 0.000 description 17
- 239000006227 byproduct Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000012544 monitoring process Methods 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010202 multivariate logistic regression analysis Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019003760 | 2019-01-11 | ||
| JP2019-003760 | 2019-01-11 | ||
| JP2020-000944 | 2020-01-07 | ||
| JP2020000944A JP7401313B2 (ja) | 2019-01-11 | 2020-01-07 | 処理方法及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202101578A TW202101578A (zh) | 2021-01-01 |
| TWI829844B true TWI829844B (zh) | 2024-01-21 |
Family
ID=71580285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109100466A TWI829844B (zh) | 2019-01-11 | 2020-01-07 | 處理方法及電漿處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7401313B2 (ko) |
| KR (1) | KR20200087694A (ko) |
| CN (1) | CN111435636B (ko) |
| TW (1) | TWI829844B (ko) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050230049A1 (en) * | 2004-04-14 | 2005-10-20 | Ryoji Nishio | Method and apparatus for plasma processing |
| US20070224709A1 (en) * | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
| TW201303998A (zh) * | 2011-03-25 | 2013-01-16 | Tokyo Electron Ltd | 電漿處理裝置及電漿處理方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000183038A (ja) | 1998-12-14 | 2000-06-30 | Hitachi Ltd | プラズマ処理装置 |
| JP4486372B2 (ja) | 2003-02-07 | 2010-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4846190B2 (ja) * | 2003-05-16 | 2011-12-28 | 東京エレクトロン株式会社 | プラズマ処理装置およびその制御方法 |
| JP4672455B2 (ja) * | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体 |
| JP4566789B2 (ja) * | 2005-03-07 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| JP4884047B2 (ja) | 2006-03-23 | 2012-02-22 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP5281309B2 (ja) | 2008-03-28 | 2013-09-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体 |
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置，プラズマ処理方法，プログラム |
| JP6396699B2 (ja) | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6510922B2 (ja) * | 2015-07-22 | 2019-05-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| JP6770848B2 (ja) * | 2016-03-29 | 2020-10-21 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
-
2020
- 2020-01-02 KR KR1020200000347A patent/KR20200087694A/ko unknown
- 2020-01-07 TW TW109100466A patent/TWI829844B/zh active
- 2020-01-07 JP JP2020000944A patent/JP7401313B2/ja active Active
- 2020-01-10 CN CN202010027068.4A patent/CN111435636B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050230049A1 (en) * | 2004-04-14 | 2005-10-20 | Ryoji Nishio | Method and apparatus for plasma processing |
| US20070224709A1 (en) * | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
| TW201303998A (zh) * | 2011-03-25 | 2013-01-16 | Tokyo Electron Ltd | 電漿處理裝置及電漿處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7401313B2 (ja) | 2023-12-19 |
| KR20200087694A (ko) | 2020-07-21 |
| CN111435636B (zh) | 2024-04-19 |
| TW202101578A (zh) | 2021-01-01 |
| JP2020113759A (ja) | 2020-07-27 |
| CN111435636A (zh) | 2020-07-21 |
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