TWI827832B - Substrate processing device - Google Patents
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- TWI827832B TWI827832B TW109111570A TW109111570A TWI827832B TW I827832 B TWI827832 B TW I827832B TW 109111570 A TW109111570 A TW 109111570A TW 109111570 A TW109111570 A TW 109111570A TW I827832 B TWI827832 B TW I827832B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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Abstract
Description
本發明係關於一種基板處理系統及基板處理裝置。 The invention relates to a substrate processing system and a substrate processing device.
專利文獻1揭露了一種基板清洗裝置,係對基板(例如,玻璃基板)照射紫外線,而去除附著於基板之表面的有機物之異物或是殘渣。
[專利文獻1]國際公開第2009/022429號 [Patent Document 1] International Publication No. 2009/022429
本發明係說明一種基板處理系統及基板處理裝置,可有效率地處理基板之兩面。 The present invention describes a substrate processing system and a substrate processing device that can efficiently process both sides of a substrate.
依本發明之一個觀點的基板處理系統包含:搬運裝置,用以搬運基板,該基板包含第一主面及作為第一主面之背面的第二主面;及基板處理裝置,在其與搬運裝置之間傳接基板。基板處理裝置包含:固持部,將藉由搬運裝置搬運之基板加以固持;處理部,對第一主面及第二主面中之一者進行既定處理;驅動部,驅動固持部及處理部中的至少一者,而使固持於固持部之基板對於處理部相對移動;翻轉部,用於使基板翻轉;及殼體,收納固持部、處理部、驅動部及翻轉部。 A substrate processing system according to an aspect of the present invention includes: a transport device for transporting a substrate, the substrate including a first main surface and a second main surface as a back surface of the first main surface; and a substrate processing device configured to transport the substrate. Transferring substrates between devices. The substrate processing device includes: a holding part that holds the substrate conveyed by the conveying device; a processing part that performs predetermined processing on one of the first main surface and the second main surface; and a driving part that drives the holding part and the processing part. At least one of them is used to move the substrate held in the holding part relative to the processing part; the flipping part is used to flip the substrate; and the housing is used to accommodate the holding part, the processing part, the driving part and the flipping part.
根據依本發明之基板處理系統及基板處理裝置,可有效率地處理基板的兩面。 According to the substrate processing system and the substrate processing device according to the present invention, both sides of the substrate can be processed efficiently.
1:基板處理系統 1:Substrate processing system
2:搬運裝置 2:Transportation device
2a:搬運臂 2a:Carrying arm
2b:殼體 2b: Shell
2c:閘部 2c: Gate
3:基板處理裝置 3:Substrate processing device
10:殼體 10: Shell
20:升降部 20:Lifting part
21:致動器 21: Actuator
22:升降銷 22: Lift pin
30:固持部 30: Holding part
31:框體 31:Frame
32:支撐片 32:Support piece
40:驅動部 40:Drive Department
41:軌道 41:Orbit
42:滑件 42:Sliding piece
43:支撐構件 43:Supporting members
50:翻轉部 50: Turning part
51:基座 51:Pedestal
52:夾持構件 52: Clamping member
53:夾持驅動部 53: Clamping drive part
54:翻轉驅動部 54: Flip drive unit
55:連接構件 55:Connection components
56:突起部 56:Protrusion
60:光照射部 60:Light irradiation part
61:殼體 61: Shell
62:光源 62:Light source
70:刷具 70:Brush tools
A1,A2,A3:箭頭 A1,A2,A3: arrow
Ctr:控制器(控制部) Ctr: Controller (Control Department)
W:晶圓(基板) W: Wafer (substrate)
Wa:主面(第一主面) Wa: Main side (first main side)
Wb:主面(第二主面) Wb: Main side (second main side)
圖1係顯示從側方觀察基板處理系統之一例的概略圖。 FIG. 1 is a schematic diagram showing an example of the substrate processing system viewed from the side.
圖2係顯示從上方觀察基板處理系統之一例的概略圖。 FIG. 2 is a schematic diagram showing an example of the substrate processing system viewed from above.
圖3係顯示從斜上方觀察基板處理裝置之一例的概略圖。 FIG. 3 is a schematic diagram showing an example of the substrate processing apparatus viewed from diagonally above.
圖4係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 4 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖5係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 5 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖6係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 6 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖7係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 7 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖8係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 8 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖9係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 9 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖10係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 10 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖11係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 11 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖12係用於說明藉由圖1之基板處理系統所執行之基板處理方法的圖式。 FIG. 12 is a diagram for explaining a substrate processing method performed by the substrate processing system of FIG. 1 .
圖13係顯示從側方觀察基板處理系統之另一例的概略圖。 FIG. 13 is a schematic diagram showing another example of the substrate processing system viewed from the side.
以下,參照圖面並更詳細地說明依本發明之實施態樣之一例。在以下的說明中,對於具有相同元素或是相同功能的元素使用相同符號,並省略重複之說明。 Hereinafter, an example of an embodiment of the present invention will be described in more detail with reference to the drawings. In the following description, the same symbols are used for elements with the same elements or the same functions, and repeated explanations are omitted.
[基板處理系統] [Substrate processing system]
首先,參照圖1~圖3,說明基板處理系統1的構成。基板處理系統1包含:搬運裝置2、基板處理裝置3及控制器Ctr(控制部)。
First, the structure of the
如圖1及圖2所示,搬運裝置2係對基板處理裝置3搬入晶圓W(基板)。搬運裝置2係將在基板處理裝置3處理過之晶圓W從基板處理裝置3搬出。搬運裝置2包含:搬運臂2a,為了對基板處理裝置3搬入搬出晶圓W而使用;及殼體2b,收納搬運臂2a。
As shown in FIGS. 1 and 2 , the
搬運臂2a係基於來自控制器Ctr的控制訊號,而固持晶圓W,同時可在基板處理裝置3與基板處理系統1之其他位置之間移動。作為基板處理系統1之其他位置可列舉例如:在密封狀態下收納晶圓W的載具(未圖示)、進行晶圓W之熱處理的熱處理裝置(未圖示)、及將各種塗布液或是處理液供給至晶圓W的液體處理裝置(未圖示)等。以下,係以「搬運臂2a在晶圓W的其中一個主面Wa(第一主面)朝向頂面,且晶圓W的另一個主面Wb(第二主面)朝向下方的狀態下,搬運晶圓W」為例來加以說明。然而,藉由搬運臂2a所進行之搬運時的晶圓W之姿態,並無特別限定。
The
殼體2b係作為搬運臂2a的通路(搬運路徑)而發揮功能。殼體2b係與基板處理裝置3鄰接,並經由閘部2c而與基板處理裝置3的殼體10(之後敘述)連通。閘部2c係基於來自控制器Ctr的控制訊號而開閉。在閘部2c開放的狀態下,搬運臂2a可在殼體2b與殼體10之間移動。
The
在基板處理系統1中處理的晶圓W,可呈圓板狀,亦可在圓形的一部形成有缺口,亦可呈矩形、多角形等圓形以外的形狀。以下,係以晶圓W呈矩形的態樣來加以說明。晶圓W例如亦可為半導體基板、玻璃基板、遮罩基板、FPD(Flat Panel Display:平面顯示器)基板等其他各種基板。
The wafer W processed in the
基板處理裝置3係對晶圓W的各主面Wa、Wb,進行既定處理。如圖1~圖3所示,基板處理裝置3包含:殼體10、升降部20、固持部30、驅動部40、翻轉部50及光照射部60(處理部)。
The
殼體10係將升降部20、固持部30、驅動部40、翻轉部50及光照射部60收納於同一收納空間內。亦即,細節係於之後敘述,但藉由翻轉部50所進行之晶圓W的處理及藉由光照射部60所進行之晶圓W的處理,均在殼體10內進行。
The
升降部20包含致動器21、及複數升降銷22。致動器21係基於來自控制器Ctr的控制訊號而動作,並使複數升降銷22上下移動(參照圖1及圖3的箭頭A1)。當複數升降銷22上升時(例如,位於上死點時),可在複數升降銷22的前端上載置晶圓W。載置於複數升降銷22之前端上的晶圓W,係伴隨著複數升降銷22的上下移動而升降。
The lifting
特別如圖2及圖3所示,固持部30包含:框體31及四個支撐片32。框體31朝向閘部2c之側係呈開放的C字形。在框體31之內側的空間內可配置晶圓W。框體31例如可由不鏽鋼等金屬材料而形成。
Especially as shown in FIGS. 2 and 3 , the holding
四個支撐片32係分別安裝於框體31之內緣的四個角落。各支撐片32係呈略L字形,並可支撐晶圓W的底面側。矩形之晶圓W的各角部係載置於分別對應的各支撐片32,藉此進行晶圓W的對準。四個支撐片32例如可由PEEK(聚醚醚酮)等樹脂材料而形成。
The four
特別如圖3所示,驅動部40包含:軌道41、滑件42及支撐構件43。軌道41係在殼體10的底面上從殼體10的一端側(閘部2c側)延伸到另一端側(與閘部2c相反側)。滑件42係基於來自控制器Ctr的動作訊號,而可沿著軌道41移動。滑件42的移動速度例如可為40mm/sec左右。支撐構件43係沿著垂直方向延伸,以連接滑件42與框體31。因此,若滑件42在晶圓W被固持於固持部30的狀態下,於軌道41上移動,則晶圓W亦會沿著軌道41而水平移動(參照圖1~圖3的箭頭A2)。
Especially as shown in FIG. 3 , the driving
翻轉部50係基於來自控制器Ctr的控制訊號而動作,並夾持及翻轉晶圓W。特別如圖2及圖3所示,翻轉部50包含:基座51、一對夾持構件52、夾持驅動部53及翻轉驅動部54。
The flipping
基座51係在靜止狀態下沿著垂直方向而延伸。一對夾持構件52係分別經由連接構件55而與基座51連接。一對夾持構件52可分別相對於基座51而在其延伸方向上移動。夾持構件52在圖2及圖3所示的例子中,呈略十字形,但只要可夾持晶圓W,夾持構件52的形狀並不特別限定。
The
在夾持構件52的各角落中,設有朝另一夾持構件52突出的突起部56。如圖1所示,突起部56可呈現將圓柱與圓錐台加以組合而成的形狀。晶圓W係在突起部56之圓錐台的斜面上受到支撐。突起部56例如可由PEEK(聚醚醚酮)等樹脂材料形成。
In each corner of the clamping
夾持驅動部53係基於來自控制器Ctr的控制訊號而動作,以使一對夾持構件52分別相對於基座51移動(參照圖1及圖3的箭頭A3)。夾持驅動部53例如可將一對夾持構件52之間隔,在「夾持晶圓W的夾持位置」與「未夾持晶圓W的釋放位置」之間加以變更。夾持驅動部53例如可為直線運動式氣缸等。
The
翻轉驅動部54係基於來自控制器Ctr的控制訊號而動作,以使基座51繞著與基座51之延伸方向交叉的旋轉軸翻轉(參照圖2及圖3箭頭A4)。若在藉由一對夾持構件52夾持晶圓W的狀態下,使翻轉驅動部54動作,則會將晶圓W的上下加以翻轉。亦即,在主面Wa為頂面且主面Wb為底面的情況下,會成為主面Wa為底面且主面Wb為頂面。翻轉驅動部54例如可為馬達等。
The
如圖1~圖3所示,光照射部60係位於殼體10的內側(與閘部2c相反側)。光照射部60包含:殼體61及光源62。殼體61係將光源62收納於內部。
As shown in FIGS. 1 to 3 , the
光源62係對該主面Wa、Wb照射用於將附著於晶圓W之主面Wa、Wb之有機物進行灰化的處理光。該處理光例如可為波長10nm~300nm左右的紫外線。光源62例如呈直管型,並能以相對於晶圓W之主面Wa、Wb平行的方式,在殼體61內延伸。
The
控制器Ctr例如基於記錄於記錄媒體(未圖示)之程式或是來自操作員的操作輸入等,而產生用於使基板處理系統1之各部動作的指示訊號,並分別將該指示訊號傳輸至基板處理系統1之各部。
The controller Ctr generates instruction signals for operating each part of the
[基板處理方法] [Substrate processing method]
接著,參照圖4~圖12,說明晶圓W的處理方法。又,在晶圓W不存在於殼體10內的情況下,固持部30係位於光照射部60側而不與升降部20重疊,並且光照射部60的光源62不會點燈。
Next, the processing method of the wafer W will be described with reference to FIGS. 4 to 12 . In addition, when the wafer W does not exist in the
首先,控制器Ctr控制閘部2c,而開放閘部2c,並成為使殼體2b、10連通的狀態。接著,控制器Ctr控制搬運臂2a,使固持晶圓W之搬運臂2a在殼體10內移動,以使晶圓W位於升降部20的上方。
First, the controller Ctr controls the
接著,控制器Ctr控制致動器21,而使升降銷22升高。此時,升降銷22係避開搬運臂2a而上升,並在晶圓W之主面Wa為頂面的狀態下,將晶圓W載置於升降銷22的前端(參照圖4)。
Next, the controller Ctr controls the
接著,控制器Ctr控制搬運臂2a,而使搬運臂2a移動至殼體2b。接著,控制器Ctr控制閘部2c,而關閉閘部2c,使殼體2b與殼體10成為不連通的狀態(參照圖5)。
Next, the controller Ctr controls the
接著,控制器Ctr控制致動器21,而使升降銷22下降。藉此,晶圓W會與升降銷22一起下降,並且晶圓W會被位於下側之夾持構件52的突起部56所支撐(參照圖5)。
Next, the controller Ctr controls the
接著,控制器Ctr控制夾持驅動部53,而使一對夾持構件52移動至夾持位置。藉此,晶圓W係在主面Wa為頂面且主面Wb為底面的狀態下,被一對夾持構件52所夾持(參照圖6)。
Next, the controller Ctr controls the clamping
接著,控制器Ctr控制翻轉驅動部54,而使基座51與一對夾持構件52一起翻轉,亦即使它們旋轉180°(參照圖7)。藉此,晶圓W會成為主面Wa為底面且主面Wb為頂面的狀態。
Next, the controller Ctr controls the
接著,控制器Ctr控制夾持驅動部53,而使一對夾持構件52移動至釋放位置。此時,晶圓W係在主面Wb為頂面的狀態下,被位於下側的夾持構件52之突起部56所支撐(參照圖8)。
Next, the controller Ctr controls the
接著,控制器Ctr控制致動器21,而使升降銷22升高。此時,在晶圓W之主面Wb為頂面的狀態下,將晶圓W載置於升降銷22的前端(參照圖8)。
Next, the controller Ctr controls the
接著,控制器Ctr控制滑件42,而使固持部30移動至軌道41之一端側(閘部2c側)。此時,由於框體31係呈C字形,因此框體31可避開上升的升降銷22而位於與晶圓W重疊的位置(參照圖8)。
Next, the controller Ctr controls the
接著,控制器Ctr控制致動器21,而使升降銷22下降。藉此,晶圓W會與升降銷22一起下降,並藉由位於下側的固持部30之支撐片32支撐晶圓W(參照圖9)。
Next, the controller Ctr controls the
接著,控制器Ctr控制滑件42,而使固持部30移動,以使晶圓W位於光照射部60之附近且不與光源62重疊的待命位置。接著,控制器Ctr控制光源62,而使光源62點燈。此時,由於晶圓W位於待命位置,因此從光源62照射之紫外線不會照射至晶圓W(參照圖9)。
Next, the controller Ctr controls the
在光源62的準備完成後,控制器Ctr控制滑件42,而使固持部30移動至軌道41的另一端側(與閘部2c相反側)。此時,由於晶圓W會通過光源62的正下方,因此紫外線會照射至晶圓W的主面Wb。藉此,去除附著於主面Wb的有機物(UV清洗)(參照圖10)。
After the preparation of the
接著,控制器Ctr控制光源62,而使光源62熄燈。在此狀態下,控制器Ctr會控制滑件42,而使固持部30移動至軌道41的一端側(閘部2c側)。接著,控制器Ctr係使升降銷22升高。此時,在晶圓W之主面Wb為頂面的狀態下,將晶圓W載置於升降銷22的前端(參照圖11)。
Next, the controller Ctr controls the
接著,控制器Ctr控制滑件42,而使固持部30移動至固持部30不與升降部20重疊的位置(參照圖12)。接著,控制器Ctr控制致動器21,而使升降銷22下降。藉此,晶圓W會與升降銷22一起下降,並藉由位於下側之夾持構件52的突起部56支撐晶圓W。
Next, the controller Ctr controls the
接著,控制器Ctr控制夾持驅動部53,而使一對夾持構件52移動至夾持位置。藉此,晶圓W會在主面Wa為底面且主面Wb為頂面的狀態下,被一對夾持構件52所夾持。
Next, the controller Ctr controls the clamping
接著,控制器Ctr控制翻轉驅動部54,而使基座51與一對夾持構件52一起翻轉,亦即使它們旋轉180°(參照圖12)。藉此,晶圓W會成為主面Wa為頂面且主面Wb為底面的狀態。
Next, the controller Ctr controls the
之後,控制器Ctr係控制基板處理系統1之各部,而重複執行與圖8~圖11相同的製程。亦即,在晶圓W通過光源62的正下方時,對晶圓W的主面Wa照射紫外線,以去除附著於主面Wa的有機物(UV清洗)。其後,開放閘部2c,晶圓W係在主面Wa為頂面且主面Wb為底面的狀態下,被傳遞至搬運臂2a。搬運臂2a係將在基板處理裝置3中處理過之晶圓W搬運至後續的製程。
Thereafter, the controller Ctr controls each part of the
[作用] [effect]
此外,作為用於將晶圓W之兩面進行UV清洗的一個方法,一般認為係使基板通過一對紫外線燈之間。此情況下,必須具有用於照射晶圓W之表面的紫外線燈、及用於照射晶圓W之背面的紫外線燈,因而會使裝置複雜化,並增加高價之紫外線燈的維修頻率。因此,會導致用於晶圓W之處理的成本增加。 In addition, as a method for UV cleaning both sides of the wafer W, it is generally considered that the substrate is passed between a pair of ultraviolet lamps. In this case, it is necessary to have an ultraviolet lamp for irradiating the surface of the wafer W and an ultraviolet lamp for irradiating the back surface of the wafer W. This complicates the device and increases the frequency of maintenance of the expensive ultraviolet lamp. Therefore, the cost for processing the wafer W increases.
作為用於處理晶圓W之兩面的另一方法,一般認為係在處理完晶圓W之其中之一個主面後,翻轉晶圓W,再處理晶圓W的另一個主面。此情況下,係以使晶 圓W依序通過用於處理晶圓W之其中之一個主面的單元、用於使晶圓W翻轉的單元、及用於處理晶圓W之另一個主面的單元的方式,構成基板清洗裝置。在同時處理多數晶圓W的基板清洗裝置中,若以使晶圓W複數次通過相同單元的方式構成基板處理裝置,則會使得晶圓W的搬運路徑複雜化,或使得該裝置的控制複雜化。為此,必須具有複數單元、及兩個紫外線燈,亦會導致用於晶圓W之處理的成本增加。 As another method for processing both sides of the wafer W, it is generally considered that after processing one of the main surfaces of the wafer W, the wafer W is turned over, and then the other main surface of the wafer W is processed. In this case, the crystal The circle W sequentially passes through a unit for processing one of the main surfaces of the wafer W, a unit for flipping the wafer W, and a unit for processing the other main surface of the wafer W, constituting substrate cleaning. device. In a substrate cleaning apparatus that processes a plurality of wafers W at the same time, if the substrate processing apparatus is configured so that the wafers W pass through the same unit multiple times, the transport path of the wafers W will be complicated, or the control of the apparatus will be complicated. change. For this purpose, a plurality of units and two ultraviolet lamps must be provided, which will also increase the cost of processing the wafer W.
相對於此,根據依上述例子的基板處理裝置3,係在同一殼體10內,進行晶圓W之各主面Wa、Wb的處理、及晶圓W的翻轉。因此,並不需要為了處理晶圓W的各主面Wa、Wb,而將晶圓W搬運至其他單元。從而,可有效率地處理晶圓W的兩面。又,由於能以一個處理部進行晶圓W之各面的處理,故可實現基板處理裝置3的小型化、低成本化及光照射部60之維修的簡化。
On the other hand, according to the
根據上述的例子,係在將晶圓W翻轉一次而處理完主面Wb後,將晶圓W再次翻轉而處理主面Wa。因此,在以主面Wa為頂面的方式將晶圓W搬入基板處理裝置3的情況下,當處理完晶圓W的兩面之後,亦可在與搬入時相同即主面Wa為頂面的狀態下,將晶圓W從基板處理裝置3搬出。從而,對晶圓W而言,較容易進行後續的處理。
According to the above example, after the wafer W is turned over once to process the main surface Wb, the wafer W is turned over again to process the main surface Wa. Therefore, when the wafer W is loaded into the
根據上述的例子,直到光源62的準備完成為止,係處於使晶圓W位於待命位置的狀態。因此,在使晶圓W盡可能地接近光照射部60之後,才進行來自光照射部60之光的照射。從而,可降低在光照射部60消耗的能量。
According to the above example, the wafer W is placed in the standby position until the preparation of the
根據上述的例子,晶圓W的待命位置係與藉由翻轉部50翻轉晶圓W的位置不同。因此,可在避免翻轉部50及晶圓W與光照射部60的接觸的同時,實現在光照射部60中的節能。
According to the above example, the standby position of the wafer W is different from the position where the wafer W is turned over by the turning
根據上述的例子,翻轉部50係在晶圓W從搬運臂2a經由升降部20而傳遞至固持部30的傳遞位置上,使晶圓W翻轉。因此,不需使晶圓W從傳遞位置移動至翻轉位置。從而,可實現基板處理裝置3的更小型化。
According to the above example, the flipping
根據上述的例子,係藉由以支撐片32支撐晶圓W的底面側,而將晶圓W固持於固持部30。因此,晶圓W的頂面側並不會被固持部30所覆蓋。從而,在執行藉由光照射部60所進行之晶圓W之處理時,在晶圓W較不易產生未處理區域(未照射光的區域)。其結果,可將晶圓W之各主面Wa、Wb的整面加以處理。另一方面,支撐片32中支撐晶圓W的部分,係被晶圓W所覆蓋。因此,在執行藉由光照射部60所進行之晶圓W之處理時,來自光照射部60的光不會照射至支撐片32的該部分。從而,可抑制伴隨光之照射而導致的支撐片32之劣化。
According to the above example, the bottom surface side of the wafer W is supported by the supporting
[變形例] [Modification]
以上,係詳細說明依本發明之實施態樣,但只要在不脫離申請專利範圍及其主旨的範圍內,亦可對上述實施態樣施加各種變形。 The embodiments according to the present invention have been described in detail above. However, various modifications may be made to the embodiments described above as long as they do not deviate from the scope of the patent application and its gist.
(1)在上述的例子中,係在將晶圓W翻轉一次而處理完主面Wb之後,將晶圓W再次翻轉而處理主面Wa,但亦可在未翻轉晶圓W的情況下先處理主面Wa,並在使晶圓W翻轉後,處理主面Wb。此情況下,在基板處理裝置3中處理過的晶圓W,係在主面Wa為底面且主面Wb為頂面的狀態下,被傳遞至搬運臂2a。如此一來,藉由翻轉部50所進行之晶圓W的翻轉僅需一次便能處理晶圓W的兩面。因此,可縮短為了處理晶圓W之兩面所需要的時間。
(1) In the above example, after the wafer W is turned over once to process the main surface Wb, the wafer W is turned over again to process the main surface Wa. However, the wafer W can also be turned over first without turning over the wafer W. The main surface Wa is processed, and after the wafer W is turned over, the main surface Wb is processed. In this case, the wafer W processed in the
(2)在基板處理裝置3中,亦可僅選擇性地處理晶圓W之其中之一面。
(2) In the
(3)在上述的例子中,翻轉部50係在夾持晶圓W的狀態下使晶圓W翻轉,但亦可在吸附晶圓W的狀態下使晶圓W翻轉。
(3) In the above example, the turning
(4)在上述的例子中,係藉由使晶圓W相對於光照射部60移動,而對晶圓W的整個頂面照射光,但亦可係使光照射部60相對於晶圓W移動,亦可係使光照射部60及固持部30雙方移動。
(4) In the above example, the entire top surface of the wafer W is irradiated with light by moving the wafer W relative to the
(5)在上述的例子中,係說明了對晶圓W照射光而去除晶圓W之主面Wa、Wb之有機物的處理,但亦可如圖13所示,使刷具70等直接接觸於晶圓W的主面Wa、Wb,而去除晶圓W之主面Wa、Wb的有機物。
(5) In the above example, the process of irradiating the wafer W with light to remove the organic matter on the main surfaces Wa and Wb of the wafer W has been explained. However, as shown in FIG. 13 , the
(6)控制器Ctr亦可在光照射部60處理主面Wa時,控制驅動部40而使得晶圓W以第一速度對光照射部60相對移動,並在光照射部60處理主面Wb時,控制驅動
部40而使得晶圓W以和第一速度不同之第二速度對光照射部60相對移動。例如,控制器Ctr亦可在光照射部60處理主面Wa時,控制驅動部40而使得上述滑件42以第一速度移動,並在光照射部60處理主面Wb時,控制驅動部40而使得上述滑件42以第二速度移動。例如,在主面Wa為晶圓W之表面(電路形成面),主面Wb為晶圓W之背面的情況,應從主面Wb去除之異物(例如有機物、殘渣等)有時係少於應從主面Wa去除之異物。如此之情況,第二速度亦可低於第一速度。藉此,可縮短對主面Wb的處理時間。又,可縮短對主面Wb之處理中的光源62之點燈時間,並抑制光源62的劣化。藉此,可降低光源62的更換頻率。
(6) When the
[例示] [Example]
例1. 依本發明之一例的基板處理系統包含:搬運裝置,用以搬運基板,該基板包含第一主面及作為第一主面之背面的第二主面;及基板處理裝置,在其與搬運裝置之間傳接基板。基板處理裝置包含:固持部,將藉由搬運裝置搬運之基板加以固持;處理部,對第一主面及第二主面中的一者進行既定處理;驅動部,驅動固持部及處理部中的至少一者,以使固持於固持部之基板對處理部相對移動;翻轉部,用於使基板翻轉;及殼體,將固持部、處理部、驅動部及翻轉部加以收納。此情況,係在同一殼體內,進行基板之各主面的處理及基板的翻轉。因此,不需要為了處理基板的各面,而將基板搬運至其他單元。從而,可有效率地處理基板的兩面。又,由於能以一個處理部進行基板之各面的處理,故可實現基板處理裝置的小型化、低成本化及處理部之維修的簡化。 Example 1. A substrate processing system according to an example of the present invention includes: a transport device for transporting a substrate, the substrate including a first main surface and a second main surface serving as the back surface of the first main surface; and a substrate processing device in which Transfer the substrate to and from the transport device. The substrate processing device includes: a holding part that holds the substrate conveyed by the conveying device; a processing part that performs predetermined processing on one of the first main surface and the second main surface; and a driving part that drives the holding part and the processing part. At least one of them is used to move the substrate held in the holding part relative to the processing part; the turning part is used to turn the substrate over; and the housing is used to house the holding part, the processing part, the driving part and the turning part. In this case, the main surfaces of the substrate are processed and the substrate is turned over in the same housing. Therefore, there is no need to transport the substrate to other units in order to process each side of the substrate. Therefore, both sides of the substrate can be processed efficiently. In addition, since each surface of the substrate can be processed by one processing unit, it is possible to reduce the size and cost of the substrate processing apparatus and simplify the maintenance of the processing unit.
例2. 依本發明之另一例的基板處理裝置包含:固持部,將藉由外部的搬運裝置搬運之基板加以固持;處理部,對基板之第一主面及作為第一主面之背面的基板之第二主面中的一者進行既定處理;驅動部,驅動固持部及處理部中的至少一者,以使固持於固持部之基板對處理部相對移動;翻轉部,用於使基板翻轉;及殼體,將固持部、處理部、驅動部及翻轉部加以收納。根據例2的裝置,亦可發揮與例1相同的效果。 Example 2. A substrate processing device according to another example of the present invention includes: a holding part that holds a substrate transported by an external transportation device; and a processing part that handles the first main surface of the substrate and the back surface of the first main surface. One of the second main surfaces of the substrate performs a predetermined process; the driving part drives at least one of the holding part and the processing part so that the substrate held in the holding part moves relative to the processing part; the turning part is used to move the substrate Flip; and a housing to store the holding part, the processing part, the driving part and the flipping part. According to the device of Example 2, the same effect as that of Example 1 can also be exerted.
例3. 例2的裝置更包含控制部,用於控制處理部、驅動部及翻轉部;控制部亦可依序執行以下步驟:控制處理部及驅動部,以藉由處理部處理第一主面;控制翻轉部,以藉由基板之翻轉而交換第一主面與第二主面的朝向;及控制處理部及驅動部,以藉由處理部處理第二主面。此情況下,藉由翻轉部所進行之基板的翻轉僅需一次便能處理基板之兩面。因此,可縮短為了處理基板之兩面所需要的時間。 Example 3. The device of Example 2 further includes a control part for controlling the processing part, the driving part and the flipping part; the control part may also perform the following steps in sequence: controlling the processing part and the driving part to process the first main subject through the processing part. surface; control the flipping part to exchange the orientations of the first main surface and the second main surface through the flipping of the substrate; and control the processing part and the driving part to process the second main surface through the processing part. In this case, both sides of the substrate can be processed by flipping the substrate only once by the flipping unit. Therefore, the time required to process both sides of the substrate can be shortened.
例4. 例2的裝置更包含控制部,用於控制處理部、驅動部及翻轉部;控制部亦可依序執行以下步驟:控制翻轉部,以藉由基板的翻轉而交換第一主面與第二主面的朝向;控制處理部及驅動部,以藉由處理部處理第二主面;控制翻轉部,以藉由基板的翻轉而交換第一主面與第二主面的朝向;控制處理部及驅動部,以藉由處理部處理第一主面。此情況下,係在將基板翻轉一次而處理完第二主面之後,將基板再次翻轉而處理第一主面。因此,例如,在以第一主面為頂面的方式將基板搬入基板處理裝置時,當處理完基板的兩面之後,係在與搬入時相同即第 一主面為頂面的狀態下,將基板從基板處理裝置搬出。從而,較容易對基板進行後續的處理。 Example 4. The device of Example 2 further includes a control part for controlling the processing part, the driving part and the flipping part; the control part can also perform the following steps in sequence: control the flipping part to exchange the first main surface by flipping the substrate and the orientation of the second main surface; control the processing part and the driving part to process the second main surface through the processing part; control the flipping part to exchange the orientations of the first main surface and the second main surface through flipping of the substrate; The processing part and the driving part are controlled so that the first main surface is processed by the processing part. In this case, after the substrate is turned over once to process the second main surface, the substrate is turned over again to process the first main surface. Therefore, for example, when a substrate is loaded into a substrate processing apparatus with the first main surface serving as the top surface, after both sides of the substrate are processed, the first main surface is processed in the same manner as when the substrate was loaded in. With one main surface being the top surface, the substrate is carried out from the substrate processing apparatus. Therefore, it is easier to perform subsequent processing on the substrate.
例5. 例2~4中的任一裝置更包含控制部,用於控制處理部、驅動部及翻轉部;處理部係對基板之第一或是第二主面照射光的光照射部,控制部亦可更執行以下步驟:控制驅動部,以使基板位於來自光照射部之光不會照射到基板的待命位置,並控制光照射部,在基板於待命位置中待命的狀態下,開始光的照射。此情況下,係在使基板盡可能地接近光照射部之後,才進行來自光照射部之光的照射。因此,可降低在光照射部中消耗的能量。 Example 5. Any device in Examples 2 to 4 further includes a control part for controlling the processing part, the driving part and the turning part; the processing part is a light irradiation part that irradiates the first or second main surface of the substrate with light, The control unit may further perform the following steps: control the driving unit so that the substrate is in a standby position where light from the light irradiation unit does not irradiate the substrate, and control the light irradiation unit to start with the substrate in the standby position. Illumination of light. In this case, the light irradiation from the light irradiation part is performed only after the substrate is brought as close as possible to the light irradiation part. Therefore, the energy consumed in the light irradiation part can be reduced.
例6. 在例5的裝置中,待命位置亦可與藉由翻轉部翻轉基板的位置不同。此情況下,可避免翻轉部及基板與光照射部的接觸,並同時實現光照射部中的節能。 Example 6. In the device of Example 5, the standby position may also be different from the position where the substrate is turned over by the turning part. In this case, it is possible to avoid the contact between the flipping part and the substrate and the light irradiation part, and at the same time, energy saving in the light irradiation part is achieved.
例7. 在例5或是例6的裝置中,處理部亦可係對基板之第一或是第二主面照射紫外線的光照射部。此情況下,可藉由紫外線的照射,而去除附著於基板之各面的有機物之異物、殘渣等。 Example 7. In the apparatus of Example 5 or Example 6, the processing unit may be a light irradiation unit that irradiates ultraviolet rays to the first or second main surface of the substrate. In this case, organic foreign matters, residues, etc. attached to each surface of the substrate can be removed by ultraviolet irradiation.
例8. 控制部亦可在處理部處理第一主面時,控制驅動部,以使基板以第一速度對處理部相對移動,並在處理部處理第二主面時,控制驅動部,以使基板以和第一速度不同之第二速度對處理部相對移動。此情況下,係配合第一主面所需之處理時間與第二主面所需之處理時間的差異,而使第一速度與第二速度不同,藉 此可針對各主面而將處理時間最佳化。又,藉由各主面之處理時間的最佳化,亦可縮短第一主面之處理時間與第二主面之處理時間的總時間,並減輕處理部的負擔。 Example 8. The control unit may also control the driving unit when the processing unit processes the first main surface so that the substrate moves relative to the processing unit at a first speed, and when the processing unit processes the second main surface, control the driving unit to cause the substrate to move relative to the processing unit at a first speed. The substrate is relatively moved toward the processing unit at a second speed that is different from the first speed. In this case, the first speed and the second speed are different according to the difference between the processing time required for the first main surface and the processing time required for the second main surface. This optimizes processing time for each facet. In addition, by optimizing the processing time of each main surface, the total time of the processing time of the first main surface and the processing time of the second main surface can also be shortened, and the burden on the processing unit can be reduced.
例9. 在例2~例8中的任一裝置中,翻轉部亦可在將基板從搬運裝置傳遞至固持部的傳遞位置上,使基板翻轉。此情況下,不需要使基板從傳遞位置移動至翻轉位置。因此,可實現基板處理裝置的更小型化。 Example 9. In any of the devices in Examples 2 to 8, the turning unit may turn the substrate over at a transfer position where the substrate is transferred from the conveying device to the holding unit. In this case, it is not necessary to move the substrate from the transfer position to the turning position. Therefore, the substrate processing apparatus can be further miniaturized.
例10. 在例2~例9中的任一裝置中,翻轉部亦可夾持或是吸附基板並使基板翻轉。 Example 10. In any of the devices in Examples 2 to 9, the turning portion can also clamp or adsorb the substrate and turn the substrate over.
例11. 在例2~例10中的任一裝置中,固持部亦可在不覆蓋第一及第二主面中藉由處理部處理之面的情況下,固持基板。此情況下,在藉由處理部所進行之基板的處理時,較不容易於基板產生未處理區域。因此,可處理基板之各面的整面。 Example 11. In any of the devices in Examples 2 to 10, the holding part may hold the substrate without covering the surface processed by the processing part among the first and second main surfaces. In this case, when the substrate is processed by the processing unit, it is less likely to produce an unprocessed area on the substrate. Therefore, the entire surface of each surface of the substrate can be processed.
1:基板處理系統 1:Substrate processing system
2:搬運裝置 2:Transportation device
2a:搬運臂 2a:Carrying arm
2b:殼體 2b: Shell
2c:閘部 2c: Gate
3:基板處理裝置 3:Substrate processing device
10:殼體 10: Shell
20:升降部 20:Lifting part
21:致動器 21: Actuator
22:升降銷 22: Lift pin
30:固持部 30: Holding part
32:支撐片 32:Support piece
50:翻轉部 50: Turning part
52:夾持構件 52: Clamping member
56:突起部 56:Protrusion
60:光照射部 60:Light irradiation part
61:殼體 61: Shell
62:光源 62:Light source
A1,A2,A3:箭頭 A1,A2,A3: arrow
Ctr:控制器(控制部) Ctr: Controller (Control Department)
W:晶圓(基板) W: Wafer (substrate)
Wa:主面(第一主面) Wa: Main side (first main side)
Wb:主面(第二主面) Wb: Main side (second main side)
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09199458A (en) * | 1996-01-22 | 1997-07-31 | Dainippon Screen Mfg Co Ltd | Substrate treatment device |
JP2001244229A (en) * | 2000-02-28 | 2001-09-07 | Shibaura Mechatronics Corp | Substrate-treating device |
JP2017092304A (en) * | 2015-11-12 | 2017-05-25 | 株式会社Screenホールディングス | Substrate processing apparatus |
JP2018085354A (en) * | 2016-11-21 | 2018-05-31 | 株式会社荏原製作所 | Reversing machine, reversing unit, inversion method and substrate processing method |
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JP2005254186A (en) * | 2004-03-15 | 2005-09-22 | Sony Corp | Foreign matter removal apparatus |
JP2008177361A (en) * | 2007-01-18 | 2008-07-31 | Nec Electronics Corp | Uv irradiation device |
JP5014811B2 (en) * | 2007-01-22 | 2012-08-29 | 東京エレクトロン株式会社 | Substrate processing method |
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JPH09199458A (en) * | 1996-01-22 | 1997-07-31 | Dainippon Screen Mfg Co Ltd | Substrate treatment device |
JP2001244229A (en) * | 2000-02-28 | 2001-09-07 | Shibaura Mechatronics Corp | Substrate-treating device |
JP2017092304A (en) * | 2015-11-12 | 2017-05-25 | 株式会社Screenホールディングス | Substrate processing apparatus |
JP2018085354A (en) * | 2016-11-21 | 2018-05-31 | 株式会社荏原製作所 | Reversing machine, reversing unit, inversion method and substrate processing method |
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