TWI826554B - 用於鎢之化學機械拋光組成物及方法 - Google Patents

用於鎢之化學機械拋光組成物及方法 Download PDF

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Publication number
TWI826554B
TWI826554B TW108137639A TW108137639A TWI826554B TW I826554 B TWI826554 B TW I826554B TW 108137639 A TW108137639 A TW 108137639A TW 108137639 A TW108137639 A TW 108137639A TW I826554 B TWI826554 B TW I826554B
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TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
tungsten
polishing composition
substrate
Prior art date
Application number
TW108137639A
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English (en)
Chinese (zh)
Other versions
TW202016231A (zh
Inventor
彭嘉德
何藺蓁
紀柏享
Original Assignee
美商羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 美商羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 美商羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW202016231A publication Critical patent/TW202016231A/zh
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Publication of TWI826554B publication Critical patent/TWI826554B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/01—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor for combined grinding of surfaces of revolution and of adjacent plane surfaces on work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/04—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of metal, e.g. skate blades
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW108137639A 2018-10-20 2019-10-18 用於鎢之化學機械拋光組成物及方法 TWI826554B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/166,085 2018-10-20
US16/166,085 US10597558B1 (en) 2018-10-20 2018-10-20 Chemical mechanical polishing composition and method for tungsten

Publications (2)

Publication Number Publication Date
TW202016231A TW202016231A (zh) 2020-05-01
TWI826554B true TWI826554B (zh) 2023-12-21

Family

ID=69902732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108137639A TWI826554B (zh) 2018-10-20 2019-10-18 用於鎢之化學機械拋光組成物及方法

Country Status (5)

Country Link
US (1) US10597558B1 (https=)
JP (1) JP7548689B2 (https=)
KR (1) KR102808842B1 (https=)
CN (1) CN111074281B (https=)
TW (1) TWI826554B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4214286A4 (en) * 2020-09-18 2024-10-23 CMC Materials LLC SILICA-BASED SLURRY FOR SELECTIVE POLISHING OF CARBON-BASED FILMS
TWI849377B (zh) * 2021-01-26 2024-07-21 美商Ｃｍｃ材料有限責任公司 用於拋光硼摻雜之多晶矽之組合物及方法
JP7145351B1 (ja) 2022-03-25 2022-09-30 富士フイルム株式会社 組成物、半導体素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
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TW201631112A (zh) * 2015-02-12 2016-09-01 氣體產品及化學品股份公司 於鎢化學機械硏磨降低淺盤效應

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US6083838A (en) 1998-05-20 2000-07-04 Lucent Technologies Inc. Method of planarizing a surface on a semiconductor wafer
US7004819B2 (en) 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US7247567B2 (en) 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US7923552B2 (en) * 2004-10-18 2011-04-12 SGF Holdings, LLC High yield method of producing pure rebaudioside A
MX2009000119A (es) 2006-06-23 2009-01-26 Akzo Nobel Nv Procedimiento para la preparacion de alquilaminas/alquil eter aminas alcoxiladas con distribucion en punta.
JP2008235481A (ja) * 2007-03-19 2008-10-02 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物、その製造方法、及び研磨加工方法
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JP5361306B2 (ja) 2008-09-19 2013-12-04 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
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CN101629130B (zh) * 2009-08-14 2011-06-15 福建省晋江新德美化工有限公司 一种织物同浴除油剂
CN102108260B (zh) * 2009-12-25 2015-05-27 安集微电子（上海）有限公司 一种用于多晶硅抛光的化学机械抛光液
CN104107664B (zh) * 2013-04-16 2016-08-03 中国石油化工股份有限公司 高界面效率表面活性剂及其制备方法
PL3080079T3 (pl) * 2013-12-11 2018-12-31 Basf Se Utlenianie 2-merkaptoetanolu
CN103739826B (zh) * 2013-12-17 2016-05-25 陕西科技大学 一种聚氨酯型两性表面活性剂的制备方法
JP2017509587A (ja) * 2013-12-27 2017-04-06 ノーバス・インターナショナル・インコーポレイテッドＮｏｖｕｓ Ｉｎｔｅｒｎａｔｉｏｎａｌ，Ｉｎｃ． エトキシル化界面活性剤
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US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten

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TW201631112A (zh) * 2015-02-12 2016-09-01 氣體產品及化學品股份公司 於鎢化學機械硏磨降低淺盤效應

Also Published As

Publication number Publication date
JP2020068378A (ja) 2020-04-30
CN111074281A (zh) 2020-04-28
US10597558B1 (en) 2020-03-24
KR102808842B1 (ko) 2025-05-15
KR20200045419A (ko) 2020-05-04
CN111074281B (zh) 2021-12-14
TW202016231A (zh) 2020-05-01
JP7548689B2 (ja) 2024-09-10

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