TWI824604B - 帶電粒子光學裝置、帶電粒子設備及方法 - Google Patents
帶電粒子光學裝置、帶電粒子設備及方法 Download PDFInfo
- Publication number
- TWI824604B TWI824604B TW111125240A TW111125240A TWI824604B TW I824604 B TWI824604 B TW I824604B TW 111125240 A TW111125240 A TW 111125240A TW 111125240 A TW111125240 A TW 111125240A TW I824604 B TWI824604 B TW I824604B
- Authority
- TW
- Taiwan
- Prior art keywords
- array
- charged particle
- lens array
- control
- sample
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 132
- 238000000034 method Methods 0.000 title abstract description 40
- 238000007493 shaping process Methods 0.000 claims abstract description 152
- 230000003287 optical effect Effects 0.000 claims description 101
- 238000003491 array Methods 0.000 claims description 17
- 238000001514 detection method Methods 0.000 description 79
- 238000010894 electron beam technology Methods 0.000 description 58
- 239000000758 substrate Substances 0.000 description 22
- 230000004075 alteration Effects 0.000 description 21
- 238000007689 inspection Methods 0.000 description 21
- 230000007547 defect Effects 0.000 description 18
- 230000000670 limiting effect Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000011144 upstream manufacturing Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 10
- 238000004626 scanning electron microscopy Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
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- 238000013461 design Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005405 multipole Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
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- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 239000012467 final product Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1501—Beam alignment means or procedures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/145—Combinations of electrostatic and magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Beam Exposure (AREA)
- Electron Sources, Ion Sources (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21184294.3 | 2021-07-07 | ||
| EP21184294.3A EP4117012A1 (de) | 2021-07-07 | 2021-07-07 | Optische vorrichtung für geladene teilchen, gerät und verfahren für geladene teilchen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202309965A TW202309965A (zh) | 2023-03-01 |
| TWI824604B true TWI824604B (zh) | 2023-12-01 |
Family
ID=76829472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111125240A TWI824604B (zh) | 2021-07-07 | 2022-07-06 | 帶電粒子光學裝置、帶電粒子設備及方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4117012A1 (de) |
| CN (1) | CN117836892A (de) |
| IL (1) | IL309681A (de) |
| TW (1) | TWI824604B (de) |
| WO (1) | WO2023280552A1 (de) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004220832A (ja) * | 2003-01-10 | 2004-08-05 | Keyence Corp | 電子顕微鏡、電子顕微鏡の対物レンズ絞り判別方法、電子顕微鏡の対物レンズ絞り判別プログラムおよびコンピュータで読み取り可能な記録媒体 |
| TW201250759A (en) * | 2011-03-23 | 2012-12-16 | Kla Tencor Corp | Multiple-beam system for high-speed electron-beam inspection |
| JP2014107401A (ja) * | 2012-11-27 | 2014-06-09 | Canon Inc | 描画装置、それを用いた物品の製造方法 |
| US20150311035A1 (en) * | 2014-04-28 | 2015-10-29 | Canon Kabushiki Kaisha | Lithography apparatus, and method of manufacturing an article |
| TW201918796A (zh) * | 2017-08-08 | 2019-05-16 | 荷蘭商瑪波微影Ｉｐ公司 | 帶電粒子阻擋元件、包括此元件的曝光裝置以及使用此曝光裝置的方法 |
| TW202044310A (zh) * | 2019-03-28 | 2020-12-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 具有整合電流量測之孔徑陣列 |
| US20210005423A1 (en) * | 2018-02-27 | 2021-01-07 | Carl Zeiss Multisem Gmbh | Charged particle beam system and method |
| US20210116398A1 (en) * | 2019-10-18 | 2021-04-22 | Asml Netherlands B.V. | Systems and methods for voltage contrast defect detection |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02295040A (ja) * | 1989-05-10 | 1990-12-05 | Hitachi Ltd | 集束イオンビーム装置 |
| WO2004081910A2 (en) | 2003-03-10 | 2004-09-23 | Mapper Lithography Ip B.V. | Apparatus for generating a plurality of beamlets |
| NL1036912C2 (en) | 2009-04-29 | 2010-11-01 | Mapper Lithography Ip Bv | Charged particle optical system comprising an electrostatic deflector. |
| TWI497557B (zh) | 2009-04-29 | 2015-08-21 | Mapper Lithography Ip Bv | 包含靜電偏轉器的帶電粒子光學系統 |
| NL2007604C2 (en) | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| US10395887B1 (en) | 2018-02-20 | 2019-08-27 | Technische Universiteit Delft | Apparatus and method for inspecting a surface of a sample, using a multi-beam charged particle column |
| US10504687B2 (en) | 2018-02-20 | 2019-12-10 | Technische Universiteit Delft | Signal separator for a multi-beam charged particle inspection apparatus |
| US10748739B2 (en) | 2018-10-12 | 2020-08-18 | Kla-Tencor Corporation | Deflection array apparatus for multi-electron beam system |
| US10978270B2 (en) | 2018-12-19 | 2021-04-13 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, interchangeable multi-aperture arrangement for a charged particle beam device, and method for operating a charged particle beam device |
| IL294401A (en) * | 2020-01-06 | 2022-08-01 | Asml Netherlands Bv | Charged particle evaluation tool, test method |
-
2021
- 2021-07-07 EP EP21184294.3A patent/EP4117012A1/de not_active Withdrawn
-
2022
- 2022-06-17 WO PCT/EP2022/066631 patent/WO2023280552A1/en active Application Filing
- 2022-06-17 CN CN202280054925.7A patent/CN117836892A/zh active Pending
- 2022-06-17 IL IL309681A patent/IL309681A/en unknown
- 2022-07-06 TW TW111125240A patent/TWI824604B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004220832A (ja) * | 2003-01-10 | 2004-08-05 | Keyence Corp | 電子顕微鏡、電子顕微鏡の対物レンズ絞り判別方法、電子顕微鏡の対物レンズ絞り判別プログラムおよびコンピュータで読み取り可能な記録媒体 |
| TW201250759A (en) * | 2011-03-23 | 2012-12-16 | Kla Tencor Corp | Multiple-beam system for high-speed electron-beam inspection |
| JP2014107401A (ja) * | 2012-11-27 | 2014-06-09 | Canon Inc | 描画装置、それを用いた物品の製造方法 |
| US20150311035A1 (en) * | 2014-04-28 | 2015-10-29 | Canon Kabushiki Kaisha | Lithography apparatus, and method of manufacturing an article |
| TW201918796A (zh) * | 2017-08-08 | 2019-05-16 | 荷蘭商瑪波微影Ｉｐ公司 | 帶電粒子阻擋元件、包括此元件的曝光裝置以及使用此曝光裝置的方法 |
| US20210005423A1 (en) * | 2018-02-27 | 2021-01-07 | Carl Zeiss Multisem Gmbh | Charged particle beam system and method |
| TW202044310A (zh) * | 2019-03-28 | 2020-12-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 具有整合電流量測之孔徑陣列 |
| US20210116398A1 (en) * | 2019-10-18 | 2021-04-22 | Asml Netherlands B.V. | Systems and methods for voltage contrast defect detection |
Also Published As
| Publication number | Publication date |
|---|---|
| IL309681A (en) | 2024-02-01 |
| WO2023280552A1 (en) | 2023-01-12 |
| CN117836892A (zh) | 2024-04-05 |
| US20240136147A1 (en) | 2024-04-25 |
| TW202309965A (zh) | 2023-03-01 |
| EP4117012A1 (de) | 2023-01-11 |
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