TWI824268B - 電漿處理裝置 - Google Patents
電漿處理裝置 Download PDFInfo
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- TWI824268B TWI824268B TW110125452A TW110125452A TWI824268B TW I824268 B TWI824268 B TW I824268B TW 110125452 A TW110125452 A TW 110125452A TW 110125452 A TW110125452 A TW 110125452A TW I824268 B TWI824268 B TW I824268B
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- 238000009832 plasma treatment Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 description 80
- 239000007789 gas Substances 0.000 description 56
- 230000002093 peripheral effect Effects 0.000 description 29
- 238000001020 plasma etching Methods 0.000 description 22
- 230000007423 decrease Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 230000008859 change Effects 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 230000010355 oscillation Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- 238000010791 quenching Methods 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
WOPCT/JP2020/032428 | 2020-08-27 | ||
PCT/JP2020/032428 WO2022044216A1 (ja) | 2020-08-27 | 2020-08-27 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202209408A TW202209408A (zh) | 2022-03-01 |
TWI824268B true TWI824268B (zh) | 2023-12-01 |
Family
ID=80354908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110125452A TWI824268B (zh) | 2020-08-27 | 2021-07-12 | 電漿處理裝置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US12009180B2 (ko) |
JP (1) | JP7201805B2 (ko) |
KR (1) | KR20220027803A (ko) |
CN (1) | CN114521283A (ko) |
TW (1) | TWI824268B (ko) |
WO (1) | WO2022044216A1 (ko) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008044633A1 (fr) * | 2006-10-06 | 2008-04-17 | Tokyo Electron Limited | Dispositif et procédé de gravure au plasma |
US20110230038A1 (en) * | 2010-03-19 | 2011-09-22 | Shigenori Hayashi | Plasma doping method |
WO2014174650A1 (ja) * | 2013-04-26 | 2014-10-30 | 株式会社 日立ハイテクノロジーズ | プラズマ処理方法 |
JP2014220360A (ja) * | 2013-05-08 | 2014-11-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
TW201526099A (zh) * | 2013-12-16 | 2015-07-01 | Hitachi High Tech Corp | 電漿處理裝置及電漿處理方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947733A (ja) | 1982-09-13 | 1984-03-17 | Hitachi Ltd | プラズマプロセス方法および装置 |
JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
US11417501B2 (en) | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
JP6043852B2 (ja) * | 2015-10-01 | 2016-12-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6976228B2 (ja) | 2018-07-23 | 2021-12-08 | 株式会社日立ハイテク | プラズマ処理装置 |
-
2020
- 2020-08-27 JP JP2021524472A patent/JP7201805B2/ja active Active
- 2020-08-27 WO PCT/JP2020/032428 patent/WO2022044216A1/ja active Application Filing
- 2020-08-27 US US17/435,509 patent/US12009180B2/en active Active
- 2020-08-27 KR KR1020217027245A patent/KR20220027803A/ko not_active Application Discontinuation
- 2020-08-27 CN CN202080020805.6A patent/CN114521283A/zh active Pending
-
2021
- 2021-07-12 TW TW110125452A patent/TWI824268B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008044633A1 (fr) * | 2006-10-06 | 2008-04-17 | Tokyo Electron Limited | Dispositif et procédé de gravure au plasma |
US20110230038A1 (en) * | 2010-03-19 | 2011-09-22 | Shigenori Hayashi | Plasma doping method |
JP2011198983A (ja) * | 2010-03-19 | 2011-10-06 | Panasonic Corp | プラズマドーピング方法 |
WO2014174650A1 (ja) * | 2013-04-26 | 2014-10-30 | 株式会社 日立ハイテクノロジーズ | プラズマ処理方法 |
JP2014220360A (ja) * | 2013-05-08 | 2014-11-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
TW201526099A (zh) * | 2013-12-16 | 2015-07-01 | Hitachi High Tech Corp | 電漿處理裝置及電漿處理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN114521283A (zh) | 2022-05-20 |
TW202209408A (zh) | 2022-03-01 |
JPWO2022044216A1 (ko) | 2022-03-03 |
WO2022044216A1 (ja) | 2022-03-03 |
KR20220027803A (ko) | 2022-03-08 |
US12009180B2 (en) | 2024-06-11 |
US20240014007A1 (en) | 2024-01-11 |
JP7201805B2 (ja) | 2023-01-10 |
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