TWI821590B - Substrate processing system, valve elements and working methods - Google Patents

Substrate processing system, valve elements and working methods Download PDF

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Publication number
TWI821590B
TWI821590B TW109128062A TW109128062A TWI821590B TW I821590 B TWI821590 B TW I821590B TW 109128062 A TW109128062 A TW 109128062A TW 109128062 A TW109128062 A TW 109128062A TW I821590 B TWI821590 B TW I821590B
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Taiwan
Prior art keywords
valve
opening
transfer port
substrate
processing system
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TW109128062A
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Chinese (zh)
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TW202119527A (en
Inventor
仲禮 雷
王謙
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大陸商中微半導體設備(上海)股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber

Abstract

A substrate processing system includes: a first chamber provided with a first substrate transmission port; a second chamber with a second substrate transmission port; a sealing case disposed between the first chamber and the second chamber and including a first opening corresponding to the first substrate transmission port and a second opening corresponding to the second substrate transmission port, the sealing case connected to the first substrate transmission port and the second substrate transmission port, a first step located on the surrounding of the first substrate transmission port or the first opening; a first gate valve disposed in the sealing case; a second gate valve disposed in the sealing case; a driving device driving the first gate valve and/or the second gate valve to move to let first gate valve seal the first step, and/or let second gate valve seal the second substrate transmission port. The efficiency of the substrate processing system is elevated.

Description

基板處理系統、閥門元件及工作方法 Substrate handling systems, valve components and methods of operation

本發明涉及半導體領域,尤其涉及一種基板處理系統、閥門元件及其基板處理系統的工作方法。 The invention relates to the field of semiconductors, and in particular to a substrate processing system, a valve component and a working method of the substrate processing system.

現有的基板處理系統通常為真空集群設備(Cluster),真空集群設備包括設備前端模組、載入/載出腔(Load Lock Chamber)、第二腔以及包圍第二腔的第一腔。其中,第二腔內安裝有機械臂(Robot),機械臂用於將待處理基板從載入/載出腔內取出,並放置到任意一個第一腔中,在第一腔內,對待處理基板進行處理,待處理基板處理完成後,機械臂再將處理完的基板從第一腔內取出,並將處理完的基板傳送到外界大氣環境中。 Existing substrate processing systems are usually vacuum cluster equipment. The vacuum cluster equipment includes a front-end module of the equipment, a load/unload chamber (Load Lock Chamber), a second chamber, and a first chamber surrounding the second chamber. Among them, a robot arm (Robot) is installed in the second cavity. The robot arm is used to take out the substrate to be processed from the loading/unloading cavity and place it into any first cavity. In the first cavity, the substrate to be processed is The substrate is processed. After the processing of the substrate to be processed is completed, the robot arm takes out the processed substrate from the first chamber and transfers the processed substrate to the outside atmospheric environment.

現有的基板處理系統中,傳輸腔與製程腔、以及傳輸腔與載入/載出腔之間均設置有一個閥門。當閥門需要更換時,拆除閥門將破壞傳輸腔、製程腔和載入/載出腔的真空環境,使得基板處理系統難以繼續對待處理基板進行處理,因此,現有基板處理系統的當機頻率較高,對待處理基板的處理效率較低。 In the existing substrate processing system, a valve is provided between the transfer chamber and the process chamber, and between the transfer chamber and the loading/unloading chamber. When the valve needs to be replaced, removing the valve will destroy the vacuum environment of the transfer chamber, process chamber and loading/unloading chamber, making it difficult for the substrate processing system to continue processing the substrates to be processed. Therefore, the existing substrate processing system has a high crash frequency. , the processing efficiency of the substrate to be processed is low.

本發明解決的技術問題是提供一種基板處理系統、閥門元件及其基板處理系統的工作方法,以提高基板處理系統對基板的處理效率。 The technical problem solved by the present invention is to provide a substrate processing system, a valve component and a working method of the substrate processing system, so as to improve the substrate processing efficiency of the substrate processing system.

為解決上述技術問題,本發明提供一種基板處理系統,其包括:第一腔,第一腔具有第一基板傳輸口;第二腔,第二腔具有第二基板傳輸口;密封殼,位於第一腔與第二腔之間,密封殼包括第一開口和第二開口,第一開口對應於第一基板傳輸口,第二開口對應於第二基板傳輸口,密封殼與第一基板傳輸口和第二基板傳輸口連通,第一基板傳輸口或第一開口周圍設置第一臺階;第一閥門位於密封殼內;第二閥門位於密封殼內;驅動裝置,驅動第一閥門和/或第二閥門運動,使第一閥門密封第一臺階,和/或使第二閥門密封第二基板傳輸口。 In order to solve the above technical problems, the present invention provides a substrate processing system, which includes: a first chamber having a first substrate transfer port; a second chamber having a second substrate transfer port; a sealing shell located at the first substrate transfer port; Between the first cavity and the second cavity, the sealing shell includes a first opening and a second opening. The first opening corresponds to the first substrate transfer port, and the second opening corresponds to the second substrate transfer port. The sealing shell and the first substrate transfer port It is connected with the second substrate transmission port, and a first step is provided around the first substrate transmission port or the first opening; the first valve is located in the sealing shell; the second valve is located in the sealing shell; the driving device drives the first valve and/or the third The two valves move to make the first valve seal the first step, and/or make the second valve seal the second substrate transfer port.

在本發明的實施例中,當第一開口的開口面積大於第一基板傳輸口的開口面積時,第一基板傳輸口周圍具有第一臺階,第一閥門密封第一基板傳輸口或者第一開口周圍的第一臺階。 In an embodiment of the present invention, when the opening area of the first opening is larger than the opening area of the first substrate transfer port, there is a first step around the first substrate transfer port, and the first valve seals the first substrate transfer port or the first opening. Around the first steps.

在本發明的實施例中,當第一開口的開口面積小於等於第一基板傳輸口的開口面積時,第一開口的周圍具有第一臺階,第一閥門用於密封第一開口周圍的第一臺階。 In an embodiment of the present invention, when the opening area of the first opening is less than or equal to the opening area of the first substrate transfer port, there is a first step around the first opening, and the first valve is used to seal the first step around the first opening. steps.

在本發明的實施例中,當第二開口的開口面積大於第二基板傳輸口的開口面積時,第二閥門密封第二基板傳輸口或者第二開口。 In an embodiment of the present invention, when the opening area of the second opening is larger than the opening area of the second substrate transfer port, the second valve seals the second substrate transfer port or the second opening.

在本發明的實施例中,當第二開口的開口面積小於等於第二基板傳輸口的開口面積時,第二閥門密封第二開口。 In an embodiment of the present invention, when the opening area of the second opening is less than or equal to the opening area of the second substrate transfer port, the second valve seals the second opening.

在本發明的實施例中,第二閥門的側壁密封第二基板傳輸口。 In an embodiment of the invention, the side wall of the second valve seals the second substrate transfer port.

在本發明的實施例中,第二基板傳輸口周圍或者第二開口周圍具有第二臺階,第二閥門密封第二臺階。 In an embodiment of the present invention, there is a second step around the second substrate transfer port or the second opening, and the second valve seals the second step.

在本發明的實施例中,第一閥門與第二閥門的尺寸相同或者不同。 In an embodiment of the invention, the first valve and the second valve have the same or different sizes.

在本發明的實施例中,第一腔為製程腔,第二腔為傳輸腔。 In an embodiment of the present invention, the first chamber is a process chamber, and the second chamber is a transmission chamber.

在本發明的實施例中,製程腔的數目大於1個,各製程腔環繞傳輸腔;各製程腔與傳輸腔之間均具有第一閥門、第二閥門和密封殼。 In an embodiment of the present invention, the number of process chambers is greater than one, and each process chamber surrounds the transmission chamber; a first valve, a second valve and a sealing shell are disposed between each process chamber and the transmission chamber.

在本發明的實施例中,第一腔為真空腔,第二腔為傳輸腔。 In an embodiment of the invention, the first chamber is a vacuum chamber, and the second chamber is a transmission chamber.

在本發明的實施例中,驅動裝置包括動力裝置和與動力裝置連接的驅動桿,第一閥門和第二閥門固定於驅動桿上。 In an embodiment of the present invention, the driving device includes a power device and a driving rod connected to the power device, and the first valve and the second valve are fixed on the driving rod.

相應的,本發明還提供一種用於基板處理系統的閥門元件包括:第一閥門;第二閥門;閥外殼包圍第一閥門和第二閥門,閥外殼具有第一開口和第二開口,第一開口周圍具有第一臺階;驅動裝置,使第一閥門運動以密封第一臺階,和/或使第二閥門運動以密封第二開口。 Correspondingly, the present invention also provides a valve component for a substrate processing system including: a first valve; a second valve; a valve housing surrounding the first valve and the second valve, the valve housing having a first opening and a second opening, the first There is a first step around the opening; a driving device moves the first valve to seal the first step, and/or moves the second valve to seal the second opening.

在本發明的實施例中,第二閥門的側壁密封第二開口。 In an embodiment of the invention, the side wall of the second valve seals the second opening.

在本發明的實施例中,第二開口周圍設置有第二臺階,第二閥門密封第二臺階。 In an embodiment of the invention, a second step is provided around the second opening, and the second valve seals the second step.

在本發明的實施例中,驅動裝置使第一閥門向上移動以密封第一臺階,和/或使第二閥門朝向第二開口移動以密封第二開口。 In an embodiment of the invention, the driving device moves the first valve upward to seal the first step, and/or moves the second valve toward the second opening to seal the second opening.

相應的,本發明還提供一種基板處理系統的工作方法,包括:提供上述基板處理系統;利用驅動裝置使第一閥門運動和/或第二閥門運動,使所述第一閥門密封第一臺階,和/或使第二閥門密封第二基板傳輸口。 Correspondingly, the present invention also provides a working method of a substrate processing system, which includes: providing the above substrate processing system; using a driving device to move the first valve and/or the second valve so that the first valve seals the first step, and/or causing the second valve to seal the second substrate transfer port.

在本發明的實施例中,當第一閥門密封第一基板傳輸口時,更換第二閥門;或者,當第二閥門密封第二基板傳輸口時,更換第一閥門。 In an embodiment of the present invention, when the first valve seals the first substrate transfer port, the second valve is replaced; or when the second valve seals the second substrate transfer port, the first valve is replaced.

與現有技術相比,本發明實施例的技術方案具有以下有益效果:本發明技術方案提供的基板處理系統中,第一閥門用於密封第一臺階,有利於確保第一腔內維持真空環境;第二閥門用於密封第二基板傳輸口,有利於確保第二腔內維持真空環境。當第一閥門需要維護時,使第二閥門密封第二基板傳輸口,則第二腔內仍能維持真空環境,當第二閥門需要維護時,使第一閥門密封第一基板傳輸口,則第一腔內仍能維持真空環境。當第一腔或者第二腔內仍能維持真空環境,使得第一腔或者第二腔內仍能繼續進行製程處理而無需停機,因此,有利於降低當機頻率,提高待處理基板的處理效率。另外,利用驅動裝置使第一閥門密封第一臺階時,所施加的驅動力不會被第一閥門的板材削減,而是全部傳遞至第一閥門頂部的密封裝置,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第一閥門密封第一臺階,對第一閥門材質的剛性要求較低。 Compared with the existing technology, the technical solution of the embodiment of the present invention has the following beneficial effects: In the substrate processing system provided by the technical solution of the present invention, the first valve is used to seal the first step, which is beneficial to ensuring that the vacuum environment is maintained in the first chamber; The second valve is used to seal the second substrate transfer port, which is beneficial to ensuring that a vacuum environment is maintained in the second chamber. When the first valve needs maintenance, make the second valve seal the second substrate transfer port, then the vacuum environment can still be maintained in the second chamber. When the second valve needs maintenance, make the first valve seal the first substrate transfer port, then A vacuum environment can still be maintained in the first chamber. When the vacuum environment can still be maintained in the first cavity or the second cavity, the process processing can still be continued in the first cavity or the second cavity without shutting down. Therefore, it is beneficial to reduce the frequency of machine crashes and improve the processing efficiency of the substrate to be processed. . In addition, when the driving device is used to seal the first step of the first valve, the driving force applied will not be reduced by the plate of the first valve, but will be completely transmitted to the sealing device at the top of the first valve. Therefore, only a small amount of force is required. The driving force can achieve better sealing effect. Moreover, by using the first valve to seal the first step, the rigidity requirement for the material of the first valve is low.

100:製程腔 100: Process chamber

101:傳輸腔 101:Transmission cavity

102:真空腔 102: Vacuum chamber

200、300:第一腔 200, 300: first cavity

201、301:第一基板傳輸口 201, 301: First substrate transmission port

202、302:第二腔 202, 302: Second cavity

203、303:第二基板傳輸口 203, 303: Second substrate transmission port

204、304、400、500:密封殼 204, 304, 400, 500: sealed shell

205、305、401、501:第一閥門 205, 305, 401, 501: first valve

205a、206a、305a、401a、501a:板材 205a, 206a, 305a, 401a, 501a: Plate

205b、206b、305b、401b、501b、502b:密封裝置 205b, 206b, 305b, 401b, 501b, 502b: sealing device

206、306、402、502:第二閥門 206, 306, 402, 502: Second valve

207:驅動桿 207:Driving rod

208:蓋板 208:Cover

209、309、405、505:第一開口 209, 309, 405, 505: first opening

210、310、406、506:第二開口 210, 310, 406, 506: Second opening

211、311、404、504:第一臺階 211, 311, 404, 504: the first step

212、407:第二臺階 212, 407: The second step

230:第一螺釘 230:First screw

240:第二螺釘 240:Second screw

307、403、503:驅動裝置 307, 403, 503: driving device

第1圖是一種基板處理系統的俯視圖;第2圖是本發明一種基板處理系統的剖面結構示意圖;第3圖是第2圖基板處理系統中第一閥門密封第一基板傳輸口的結構示意圖;第4圖和第5圖是第2圖基板處理系統中第二閥門密封第二基板傳輸口各步驟的結構示意圖; 第6圖是第2圖基板處理系統卸載第一閥門的結構示意圖;第7圖是本發明另一種基板處理系統的剖面結構示意圖;第8圖是第7圖基板處理系統中第一閥門密封第一基板傳輸口的結構示意圖;第9圖是第7圖基板處理系統中第二閥門密封第二基板傳輸口的結構示意圖;第10圖是本發明一種用於基板處理系統的閥門元件的結構示意圖;第11圖是第10圖閥門組件中第一閥門的側視圖;第12圖是本發明另一種用於基板處理系統的閥門元件的結構示意圖;第13圖是第12圖閥門元件中第二閥門的側視圖;第14圖是本發明基板處理系統工作方法的流程圖。 Figure 1 is a top view of a substrate processing system; Figure 2 is a schematic cross-sectional structural diagram of a substrate processing system of the present invention; Figure 3 is a schematic structural diagram of the first valve sealing the first substrate transfer port in the substrate processing system of Figure 2; Figures 4 and 5 are structural schematic diagrams of each step of sealing the second substrate transfer port with the second valve in the substrate processing system in Figure 2; Figure 6 is a schematic structural diagram of the first valve unloading in the substrate processing system of Figure 2; Figure 7 is a schematic cross-sectional structural diagram of another substrate processing system of the present invention; Figure 8 is a seal of the first valve in the substrate processing system of Figure 7 A schematic structural diagram of a substrate transfer port; Figure 9 is a schematic structural diagram of the second valve sealing the second substrate transfer port in the substrate processing system of Figure 7; Figure 10 is a schematic structural diagram of a valve component used in the substrate processing system of the present invention ; Figure 11 is a side view of the first valve in the valve assembly in Figure 10; Figure 12 is a structural schematic diagram of another valve component used in the substrate processing system of the present invention; Figure 13 is a second valve component in Figure 12 Side view of the valve; Figure 14 is a flow chart of the working method of the substrate processing system of the present invention.

正如背景技術所述,現有基板處理系統對基板的處理效率較低,為解決所述技術問題,本發明技術方案提供一種真空密封裝置,包括:第一腔,第一腔具有第一基板傳輸口;第二腔,第二腔具有第二基板傳輸口,第二腔與第一腔沿水平方向設置;密封殼位於第一腔與第二腔之間,密封殼與第一基板傳輸口和第二基板傳輸口連通;第一閥門位於密封殼內的;第二閥門位於密封殼內,第二閥門與第一閥門沿水平方向設置;驅動裝置,驅動第一閥門和/或第二閥門運動,使第一閥門密封第一基板傳輸口,和/或使第二閥門密封第二基板傳輸口。基板處理系統對基板的處理效率較高。 As mentioned in the background art, the existing substrate processing system has low processing efficiency for substrates. In order to solve the above technical problem, the technical solution of the present invention provides a vacuum sealing device, including: a first cavity, and the first cavity has a first substrate transfer port. ; The second cavity has a second substrate transfer port, and the second cavity and the first cavity are arranged in the horizontal direction; the sealing shell is located between the first cavity and the second cavity, and the sealing shell is connected with the first substrate transfer port and the third cavity. The two substrate transmission ports are connected; the first valve is located in the sealing shell; the second valve is located in the sealing shell, and the second valve and the first valve are arranged in the horizontal direction; the driving device drives the movement of the first valve and/or the second valve, The first valve is caused to seal the first substrate transfer port, and/or the second valve is caused to seal the second substrate transfer port. The substrate processing system has high efficiency in processing substrates.

為使本發明的上述目的、特徵和有益效果能夠更為明顯易懂,下面結合附圖對本發明的具體實施例做詳細的說明 In order to make the above objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

第1圖是一種基板處理系統的俯視圖。 Figure 1 is a top view of a substrate processing system.

請參考第1圖,基板處理系統包括:製程腔100、傳輸腔101和真空腔102,工藝腔100和真空腔102包圍傳輸腔101。 Please refer to Figure 1. The substrate processing system includes: a process chamber 100, a transfer chamber 101 and a vacuum chamber 102. The process chamber 100 and the vacuum chamber 102 surround the transfer chamber 101.

製程腔(Process Module,PM)100內為真空環境,用於對待處理基板進行半導體製程。 The process chamber (Process Module, PM) 100 is a vacuum environment and is used for semiconductor processing on the substrate to be processed.

傳輸腔(Transfer Module,TM)101內為真空環境,且傳輸腔101內具有機械手臂,用於將傳輸腔101內的待處理基板傳入其中一個製程腔100內。 The transfer chamber (Transfer Module, TM) 101 is in a vacuum environment, and there is a robotic arm in the transfer chamber 101 for transferring the substrate to be processed in the transfer chamber 101 into one of the process chambers 100 .

真空腔(Loadlock)102用於實現大氣環境與真空環境之間進行切換。 The vacuum chamber (Loadlock) 102 is used to switch between the atmospheric environment and the vacuum environment.

第2圖是本發明一種基板處理系統的剖面結構示意圖。 Figure 2 is a schematic cross-sectional structural diagram of a substrate processing system of the present invention.

請參考圖2,第一腔200具有第一基板傳輸口201;第二腔202具有第二基板傳輸口203;密封殼204位於第一腔200與第二腔202之間,密封殼204包括第一開口209和第二開口210,第一開口209與第一基板傳輸口201對應,第二開口210與第二基板傳輸口203對應,密封殼204與第一基板傳輸口201和第二基板傳輸口203連通,第一基板傳輸口201或第一開口209周圍設置第一臺階211;第一閥門205位於密封殼204內;第二閥門206位於密封殼204內;驅動裝置,驅動第一閥門205和/或第二閥門206運動,使第一閥門205密封第一臺階211,和/或使第二閥門206密封第二基板傳輸口203。 Please refer to Figure 2. The first chamber 200 has a first substrate transfer port 201; the second chamber 202 has a second substrate transfer port 203; the sealing shell 204 is located between the first cavity 200 and the second cavity 202, and the sealing shell 204 includes a An opening 209 and a second opening 210. The first opening 209 corresponds to the first substrate transfer port 201, the second opening 210 corresponds to the second substrate transfer port 203, and the sealing shell 204 corresponds to the first substrate transfer port 201 and the second substrate transfer port. The first substrate transfer port 201 or the first opening 209 is connected with the first step 211; the first valve 205 is located in the sealing shell 204; the second valve 206 is located in the sealing shell 204; the driving device drives the first valve 205 And/or the second valve 206 moves, causing the first valve 205 to seal the first step 211, and/or causing the second valve 206 to seal the second substrate transfer port 203.

在一種實施例中,第一腔200為製程腔(Process Module,PM),製程腔內為真空環境,在第一腔200內對待處理基板進行半導體製程,半導體製 程包括:等離子體刻蝕製程,第一腔200的第一基板傳輸口201用於傳入或者傳出待處理基板;第二腔202為傳輸腔(Transfer Modul,TM),傳輸腔內為真空環境,第二腔202內具有機械手臂(圖中未示出),機械手臂用於抓取基板通過第二基板傳輸口203傳入或者傳出基板。 In one embodiment, the first cavity 200 is a process module (PM), and the process cavity is in a vacuum environment. The substrate to be processed is subjected to a semiconductor process in the first cavity 200. The semiconductor process is The process includes: a plasma etching process, the first substrate transfer port 201 of the first cavity 200 is used to transfer in or out the substrate to be processed; the second cavity 202 is a transfer cavity (Transfer Modul, TM), and the transfer cavity is a vacuum Environment, there is a robot arm (not shown in the figure) in the second chamber 202, and the robot arm is used to grab the substrate and transfer the substrate in or out through the second substrate transfer port 203.

在另一種實施例中,第一腔200為傳輸腔,第二腔202為真空腔(Loadlock)。 In another embodiment, the first chamber 200 is a transfer chamber, and the second chamber 202 is a vacuum chamber (Loadlock).

在本實施例中,驅動裝置包括動力裝置(圖中未示出)和與動力裝置連接的驅動桿207。 In this embodiment, the driving device includes a power device (not shown in the figure) and a driving rod 207 connected with the power device.

在本實施例中,驅動裝置使第一閥門205向上移動,使第一閥門205密封第一臺階211,使第一腔200內為真空環境。當第二閥門206需要更換或者維護時,使第一閥門205密封第一臺階211,有利於確保第一腔200內為真空環境,使得第一腔200內的半導體製程不被中斷,有利於提高基板處理系統對基板的處理效率。 In this embodiment, the driving device moves the first valve 205 upward so that the first valve 205 seals the first step 211 and makes the first chamber 200 a vacuum environment. When the second valve 206 needs to be replaced or maintained, the first valve 205 seals the first step 211, which is beneficial to ensuring a vacuum environment in the first chamber 200, so that the semiconductor process in the first chamber 200 is not interrupted, which is beneficial to improving the efficiency of the process. The substrate processing efficiency of the substrate processing system.

在本實施例中,驅動裝置使第二閥門206朝向第二基板傳輸口203,並使第二閥門206運動以密封第二基板傳輸口203,使第二腔202內為真空環境。當第一閥門205需要更換或者維護時,使第二閥門206密封第二基板傳輸口203,有利於確保第二腔202內為真空環境,使得第二腔202的半導體製程不被破壞,有利於提高基板處理系統對基板的處理效率。 In this embodiment, the driving device moves the second valve 206 toward the second substrate transfer port 203 and moves the second valve 206 to seal the second substrate transfer port 203 so that the second chamber 202 becomes a vacuum environment. When the first valve 205 needs to be replaced or maintained, the second valve 206 seals the second substrate transfer port 203, which is beneficial to ensuring a vacuum environment in the second chamber 202, so that the semiconductor process in the second chamber 202 is not destroyed, which is beneficial to Improve the substrate processing efficiency of the substrate processing system.

在本實施例中,第一閥門205的尺寸與第二閥門206的尺寸不同。在其他實施例中,所述第一閥門與第二閥門的尺寸相同。 In this embodiment, the size of the first valve 205 is different from the size of the second valve 206 . In other embodiments, the first valve and the second valve are the same size.

在本實施例中,當第一腔200為製程腔,第二腔202為傳輸腔,若製程腔的數目大於1個,多個製程腔環繞傳輸腔,且每個製程腔與傳輸腔之間均具有第一閥門205、第二閥門206和密封殼204。 In this embodiment, when the first cavity 200 is a process cavity and the second cavity 202 is a transfer cavity, if the number of process cavities is greater than 1, multiple process cavities surround the transfer cavity, and there is a gap between each process cavity and the transfer cavity. Both have a first valve 205, a second valve 206 and a sealing shell 204.

第3圖是第2圖基板處理系統中第一閥門密封第一基板傳輸口的結構示意圖。 Figure 3 is a schematic structural diagram of the first valve sealing the first substrate transfer port in the substrate processing system of Figure 2.

在本實施例中,第一開口209的開口面積與第一基板傳輸口201的開口面積相等,第一開口209周圍具有第一臺階211,第一閥門205用於密封第一臺階211。利用驅動裝置使第一閥門205與第一臺階211匹配,第一閥門205密封第一臺階211。 In this embodiment, the opening area of the first opening 209 is equal to the opening area of the first substrate transfer port 201. There is a first step 211 around the first opening 209, and the first valve 205 is used to seal the first step 211. The first valve 205 is matched with the first step 211 using a driving device, and the first valve 205 seals the first step 211 .

在本實施例中,第一閥門205包括板材205a和密封裝置205b,板材205a包括豎直部和由豎直部一端向外延伸的延伸部,密封裝置205b位於豎直部的另一端上方和延伸部上方。利用驅動裝置,使第一閥門205密封第一臺階211時,所施加的驅動力不會被板材削減,能夠被完全傳遞至密封裝置上,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第一閥門205密封第一臺階211,對第一閥門205材質的剛性要求較低。 In this embodiment, the first valve 205 includes a plate 205a and a sealing device 205b. The plate 205a includes a vertical portion and an extension portion extending outward from one end of the vertical portion. The sealing device 205b is located above and extends from the other end of the vertical portion. above the head. When the driving device is used to seal the first step 211 of the first valve 205, the driving force applied will not be reduced by the plate and can be completely transmitted to the sealing device. Therefore, only a smaller driving force is required to achieve better results. sealing effect. Moreover, by using the first valve 205 to seal the first step 211, the rigidity requirement of the material of the first valve 205 is low.

在其他實施例中,第一開口的開口面積小於第一基板傳輸口的開口面積,第一開口周圍具有第一臺階,驅動裝置使第一閥門密封第一開口;或者,第一開口的開口面積大於第一基板傳輸口的開口面積,第一基板傳輸口周圍或者第一開口周圍具有第一臺階,驅動裝置使第一閥門密封第一基板傳輸口或者第一開口。 In other embodiments, the opening area of the first opening is smaller than the opening area of the first substrate transfer port, there is a first step around the first opening, and the driving device causes the first valve to seal the first opening; or, the opening area of the first opening is The opening area is larger than the opening area of the first substrate transfer port, and there is a first step around the first substrate transfer port or the first opening, and the driving device causes the first valve to seal the first substrate transfer port or the first opening.

在本實施例中,當第二閥門206需要維護或者更換時,第一閥門205密封第一臺階211,有利於確保第一腔200內的真空環境,使第一腔200內的半導體製程不被中斷,因此,有利於提高基板處理系統的處理效率。 In this embodiment, when the second valve 206 needs to be maintained or replaced, the first valve 205 seals the first step 211, which is beneficial to ensuring the vacuum environment in the first chamber 200 and preventing the semiconductor process in the first chamber 200 from being destroyed. Interruption, therefore, helps improve the processing efficiency of the substrate processing system.

第4圖和第5圖是第2圖基板處理系統中第二閥門密封第二基板傳輸口各步驟的結構示意圖。 Figures 4 and 5 are schematic structural diagrams of each step of sealing the second substrate transfer port with the second valve in the substrate processing system in Figure 2.

驅動裝置使第二閥門206密封第二基板傳輸口203的方法包括:(1)利用驅動裝置使第二閥門206朝向第二基板傳輸口203。(2)第二閥門206朝向第二基板傳輸口203之後,利用驅動裝置使第二閥門206向第二基板傳輸口203運動以密封第二基板傳輸口203。其中,第4圖對應利用驅動裝置使第二閥門206朝向第二基板傳輸口203的結構示意圖,第5圖對應利用驅動裝置使第二閥門206向第二基板傳輸口203運動以密封第二基板傳輸口203。 The method of driving the device to cause the second valve 206 to seal the second substrate transfer port 203 includes: (1) using the drive device to drive the second valve 206 toward the second substrate transfer port 203 . (2) After the second valve 206 moves toward the second substrate transfer port 203, the driving device is used to move the second valve 206 toward the second substrate transfer port 203 to seal the second substrate transfer port 203. Among them, Figure 4 corresponds to the structural schematic diagram of using the driving device to move the second valve 206 toward the second substrate transfer port 203, and Figure 5 corresponds to using the driving device to move the second valve 206 toward the second substrate transfer port 203 to seal the second substrate. Transmission port 203.

在本實施例中,第二開口210的開口面積與第二基板傳輸口203的開口面積相等,第二開口210周圍具有第二臺階212,第二閥門206密封第二臺階212。利用驅動裝置使第二閥門206與第二臺階212匹配,第二閥門206用於實現第二臺階212的密封。 In this embodiment, the opening area of the second opening 210 is equal to the opening area of the second substrate transfer port 203. There is a second step 212 around the second opening 210, and the second valve 206 seals the second step 212. The second valve 206 is matched with the second step 212 using a driving device, and the second valve 206 is used to achieve sealing of the second step 212 .

在本實施例中,第二閥門206包括板材206a和密封裝置206b,板材206a包括豎直部和由豎直部一端向外延伸的延伸部,密封裝置206b位於豎直部的另一端上方和延伸部上方,利用所述驅動裝置,使第二閥門206密封第二臺階212時,所施加的驅動力不會被板材削減,能夠被完全傳遞至密封裝置上,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第二閥門206密封第二臺階212,對第二閥門206材質的剛性要求較低。 In this embodiment, the second valve 206 includes a plate 206a and a sealing device 206b. The plate 206a includes a vertical portion and an extension extending outward from one end of the vertical portion. The sealing device 206b is located above and extends from the other end of the vertical portion. When the driving device is used to seal the second step 212 above the second valve 206, the driving force applied will not be reduced by the plate and can be completely transmitted to the sealing device. Therefore, only a small driving force is required. A better sealing effect can be achieved. Moreover, the second valve 206 is used to seal the second step 212, and the rigidity requirement of the material of the second valve 206 is low.

在其他實施例中,第二開口的開口面積小於第二基板傳輸口的開口面積,第二開口周圍具有第二臺階,驅動裝置使第二閥門密封第二開口;或者,第二開口的開口面積大於第二基板傳輸口的開口面積,第二基板傳輸口周圍或者第二開口周圍具有第二臺階,驅動裝置使第二閥門密封第二基板傳輸口或者第二開口。 In other embodiments, the opening area of the second opening is smaller than the opening area of the second substrate transfer port, there is a second step around the second opening, and the driving device causes the second valve to seal the second opening; or, the opening area of the second opening is Larger than the opening area of the second substrate transfer port, there is a second step around the second substrate transfer port or the second opening, and the driving device causes the second valve to seal the second substrate transfer port or the second opening.

在本實施例中,當第一閥門205需要維護或者更換時,第二閥門206密封第二開口210,有利於確保第二腔202內的真空環境,使第二腔202內的處理不被中斷,因此,有利於提高基板處理系統的處理效率。 In this embodiment, when the first valve 205 needs maintenance or replacement, the second valve 206 seals the second opening 210, which is beneficial to ensuring the vacuum environment in the second chamber 202 so that the processing in the second chamber 202 is not interrupted. , Therefore, it is beneficial to improve the processing efficiency of the substrate processing system.

以下以卸載第一閥門為例進行說明:第6圖是第2圖基板處理系統卸載第一閥門的結構示意圖。 The following is an example of unloading the first valve: Figure 6 is a schematic structural diagram of the substrate processing system in Figure 2 unloading the first valve.

第一閥門205和第二閥門206固定於驅動桿207上,具體的,第一閥門205通過第一螺釘230固定於驅動桿207上,第二閥門206通過第二螺釘240固定於驅動桿207上。 The first valve 205 and the second valve 206 are fixed on the driving rod 207. Specifically, the first valve 205 is fixed on the driving rod 207 through the first screw 230, and the second valve 206 is fixed on the driving rod 207 through the second screw 240. .

基板處理系統還包括:蓋合密封殼頂部的蓋板208,當需要拆卸第一閥門205或者第二閥門206時,需打開蓋板208。 The substrate processing system also includes: a cover plate 208 that covers the top of the sealing shell. When it is necessary to disassemble the first valve 205 or the second valve 206, the cover plate 208 needs to be opened.

拆卸第一閥門205的方法包括:(1)使第二閥門206密封第二基板傳輸口203。(2)使第二閥門206密封第二基板傳輸口203之後,打開蓋板208。(3)打開蓋板208之後,拆卸第一螺釘230,使第一閥門205與驅動桿207分離。 The method of disassembling the first valve 205 includes: (1) making the second valve 206 seal the second substrate transfer port 203 . (2) After the second valve 206 seals the second substrate transfer port 203, open the cover 208. (3) After opening the cover 208, remove the first screw 230 to separate the first valve 205 from the driving rod 207.

在拆卸第一閥門205的過程中,第二閥門206密封第二基板傳輸口203,使第二腔202內仍為真空環境,使得第二腔202內仍能夠進行相應的半導體製程,因此,有利於提高基板處理系統的處理效率。 During the process of disassembling the first valve 205, the second valve 206 seals the second substrate transfer port 203, so that the second chamber 202 is still in a vacuum environment, so that the corresponding semiconductor process can still be performed in the second chamber 202. Therefore, it is beneficial To improve the processing efficiency of the substrate processing system.

拆卸第二閥門206的方法包括:(1)使第一閥門205密封第一基板傳輸口201。(2)使第一閥門205密封第一基板傳輸口201之後,打開蓋板208。(3)打開蓋板208之後,拆卸第二螺釘240,使第二閥門206與驅動桿207分離。 The method of disassembling the second valve 206 includes: (1) making the first valve 205 seal the first substrate transfer port 201 . (2) After the first valve 205 seals the first substrate transfer port 201, open the cover 208. (3) After opening the cover 208, remove the second screw 240 to separate the second valve 206 from the driving rod 207.

第7圖是本發明另一種基板處理系統的剖面結構示意圖。 Figure 7 is a schematic cross-sectional structural diagram of another substrate processing system of the present invention.

請參考第7圖,第一腔300具有第一基板傳輸口301;第二腔302具有第二基板傳輸口303;密封殼304位於第一腔300與第二腔302之間,密封殼304包括第一開口309和第二開口310,第一開口309與第一基板傳輸口301對應,第二開口310與第二基板傳輸口303對應,密封殼304與第一基板傳輸口301和第二基板傳輸口303連通,第一基板傳輸口301或所述第一開口309周圍設置第一臺階311;第一閥門305位於密封殼304內;第二閥門306位於密封殼304內;驅動裝置307,驅動第一閥門305和/或第二閥門306運動,使第一閥門305密封第一臺階311,和/或使第二閥門306密封第二基板傳輸口303。 Please refer to Figure 7. The first cavity 300 has a first substrate transfer port 301; the second cavity 302 has a second substrate transfer port 303; the sealing shell 304 is located between the first cavity 300 and the second cavity 302, and the sealing shell 304 includes The first opening 309 and the second opening 310, the first opening 309 corresponds to the first substrate transfer port 301, the second opening 310 corresponds to the second substrate transfer port 303, and the sealing shell 304 corresponds to the first substrate transfer port 301 and the second substrate The transmission port 303 is connected, and a first step 311 is set around the first substrate transmission port 301 or the first opening 309; the first valve 305 is located in the sealing shell 304; the second valve 306 is located in the sealing shell 304; the driving device 307 drives The first valve 305 and/or the second valve 306 move, so that the first valve 305 seals the first step 311, and/or the second valve 306 seals the second substrate transfer port 303.

第一閥門305密封第一臺階311,有利於確保第一腔300內維持真空環境;第二閥門306用於密封第二基板傳輸口303,有利於確保第二腔302內維持真空環境。當第一閥門305需要維護時,使第二閥門306密封第二基板傳輸口203,則第二腔302內仍能維持真空環境,當第二閥門306需要維護時,使第一閥門305密封第一臺階311,則第一腔300內仍能維持真空環境。由於第一腔300或者第二腔302內仍能維持真空環境,使得第一腔300或者第二腔302內仍能繼續進行半導體製程而無需停機,因此,有利於降低當機頻率,提高待處理基板的處理效率。 The first valve 305 seals the first step 311 to ensure that the vacuum environment is maintained in the first chamber 300; the second valve 306 is used to seal the second substrate transfer port 303 to ensure that the vacuum environment is maintained in the second chamber 302. When the first valve 305 needs maintenance, the second valve 306 is made to seal the second substrate transfer port 203, so that the vacuum environment can still be maintained in the second chamber 302. When the second valve 306 needs maintenance, the first valve 305 is made to seal the second substrate transfer port 203. With a step 311, the vacuum environment can still be maintained in the first chamber 300. Since the vacuum environment can still be maintained in the first cavity 300 or the second cavity 302, the semiconductor process can still be continued in the first cavity 300 or the second cavity 302 without shutting down. Therefore, it is beneficial to reduce the crash frequency and improve the processing time. substrate processing efficiency.

第8圖是第7圖基板處理系統中第一閥門密封第一基板傳輸口的結構示意圖。 Figure 8 is a schematic structural diagram of the first valve sealing the first substrate transfer port in the substrate processing system of Figure 7.

在本實施例中,第一開口309的開口面積與第一基板傳輸口301的開口面積相等,第一開口309周圍具有第一臺階311,第一閥門305密封第一臺階311。利用驅動裝置使第一閥門305與第一臺階311匹配,第一閥門305密封第一臺階311。 In this embodiment, the opening area of the first opening 309 is equal to the opening area of the first substrate transfer port 301. There is a first step 311 around the first opening 309, and the first valve 305 seals the first step 311. The first valve 305 is matched with the first step 311 using a driving device, and the first valve 305 seals the first step 311 .

在本實施例中,第一閥門305包括板材305a和密封裝置305b,板材305a包括豎直部和由豎直部一端向外延伸的延伸部,密封裝置305b位於豎直部的另一端上方和延伸部上方,利用驅動裝置,使第一閥門305密封第一臺階311時,所施加的驅動力不會被板材削減,能夠被完全傳遞至密封裝置上,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第一閥門305密封第一臺階311,對第一閥門305材質的剛性要求較低。 In this embodiment, the first valve 305 includes a plate 305a and a sealing device 305b. The plate 305a includes a vertical portion and an extension extending outward from one end of the vertical portion. The sealing device 305b is located above and extends from the other end of the vertical portion. When the driving device is used to seal the first step 311 above the first step 311, the driving force applied will not be reduced by the plate and can be completely transmitted to the sealing device. Therefore, only a small driving force is required to seal the first step 311. Achieve better sealing effect. Moreover, the first valve 305 is used to seal the first step 311, and the rigidity requirements for the material of the first valve 305 are low.

在其他實施例中,第一開口的開口面積小於第一基板傳輸口的開口面積,第一開口周圍具有第一臺階,驅動裝置使第一閥門密封第一開口;或者,第一開口的開口面積大於第一基板傳輸口的開口面積,第一基板傳輸口周圍具有第一臺階,驅動裝置使第一閥門密封第一基板傳輸口或者第一開口。 In other embodiments, the opening area of the first opening is smaller than the opening area of the first substrate transfer port, there is a first step around the first opening, and the driving device causes the first valve to seal the first opening; or, the opening area of the first opening is The opening area is larger than the opening area of the first substrate transfer port, and there is a first step around the first substrate transfer port, and the driving device causes the first valve to seal the first substrate transfer port or the first opening.

第9圖是第7圖基板處理系統中第二閥門密封第二基板傳輸口的結構示意圖。 Figure 9 is a schematic structural diagram of the second valve sealing the second substrate transfer port in the substrate processing system of Figure 7.

在本實施例中,第二開口310的開口面積與第二基板傳輸口303的開口面積相等,驅動裝置307使第二閥門306的側壁密封第二開口310。 In this embodiment, the opening area of the second opening 310 is equal to the opening area of the second substrate transfer port 303 , and the driving device 307 causes the side wall of the second valve 306 to seal the second opening 310 .

在其他實施例中,第二開口的開口面積小於第二基板傳輸口的開口面積,驅動裝置使第二閥門的側壁密封第一開口;或者,第二開口的開口面積大於第二基板傳輸口的開口面積,驅動裝置使第二閥門的側壁密封第二基板傳輸口或者第二開口。 In other embodiments, the opening area of the second opening is smaller than the opening area of the second substrate transfer port, and the driving device causes the side wall of the second valve to seal the first opening; or, the opening area of the second opening is larger than that of the second substrate transfer port. The opening area is such that the driving device causes the side wall of the second valve to seal the second substrate transfer port or the second opening.

第10圖是本發明一種用於基板處理系統的閥門元件的結構示意圖;第11圖是第10圖閥門組件中第一閥門的側視圖。 Figure 10 is a schematic structural diagram of a valve component used in a substrate processing system of the present invention; Figure 11 is a side view of the first valve in the valve assembly of Figure 10.

請參考第10圖,本發明之用於基板處理系統的閥門元件,其包括:第一閥門401;第二閥門402;密封殼400位於第一閥門401和第二閥門402的周圍,密封殼400具有第一開口405和第二開口406,第一開口405周圍具有第一臺階404;驅動裝置403,使第一閥門401運動以密封第一臺階404,和/或使第二閥門402運動以密封第二開口406。 Please refer to Figure 10. The valve component used in the substrate processing system of the present invention includes: a first valve 401; a second valve 402; a sealing shell 400 located around the first valve 401 and the second valve 402. The sealing shell 400 There is a first opening 405 and a second opening 406, and a first step 404 is provided around the first opening 405; the driving device 403 moves the first valve 401 to seal the first step 404, and/or moves the second valve 402 to seal Second opening 406.

在本實施例中,利用驅動裝置403密封第一開口405的方法包括:利用驅動裝置403,使第一閥門401向上移動,使第一閥門401密封第一臺階404。 In this embodiment, the method of using the driving device 403 to seal the first opening 405 includes: using the driving device 403 to move the first valve 401 upward so that the first valve 401 seals the first step 404 .

在本實施例中,第二開口405周圍具有第二臺階407;利用驅動裝置403密封第二開口406的方法包括:(1)利用驅動裝置403,使第二閥門402朝向第二臺階407。(2)使第二閥門402朝向第二臺階407之後,使第二閥門402密封第二臺階407。 In this embodiment, there is a second step 407 around the second opening 405; the method of using the driving device 403 to seal the second opening 406 includes: (1) using the driving device 403 to move the second valve 402 toward the second step 407. (2) After moving the second valve 402 toward the second step 407, the second valve 402 is made to seal the second step 407.

在本實施例中,第一閥門401的形狀與第二閥門402的形狀相同。以第一閥門401的形狀為例進行說明,請參考第11圖,第11圖是第10圖閥門組件中第一閥門的側視圖。 In this embodiment, the first valve 401 has the same shape as the second valve 402 . Taking the shape of the first valve 401 as an example for explanation, please refer to Figure 11. Figure 11 is a side view of the first valve in the valve assembly of Figure 10.

第一閥門401包括板材401a和密封裝置401b,板材401a包括豎直部和由豎直部一端向外延伸的延伸部,密封裝置401b位於豎直部的另一端上方和延伸部上方,利用驅動裝置,使第一閥門401密封第一臺階時,所施加的驅動力不會被板材削減,能夠被完全傳遞至密封裝置上,因此,只需較小的驅動力就能達到較好的密封效果。並且,利用第一閥門401密封第一臺階,對第一閥門401材質的剛性要求較低。 The first valve 401 includes a plate 401a and a sealing device 401b. The plate 401a includes a vertical part and an extension extending outward from one end of the vertical part. The sealing device 401b is located above the other end of the vertical part and above the extension. Using a driving device , when the first valve 401 seals the first step, the driving force applied will not be reduced by the plate and can be completely transmitted to the sealing device. Therefore, only a smaller driving force is needed to achieve a better sealing effect. Moreover, using the first valve 401 to seal the first step requires low rigidity of the material of the first valve 401 .

第12圖是本發明另一種用於基板處理系統的閥門元件的結構示意圖;第13圖是第12圖閥門元件中第二閥門的側視圖。 Figure 12 is a schematic structural diagram of another valve component used in a substrate processing system of the present invention; Figure 13 is a side view of the second valve in the valve component of Figure 12.

請參考圖12,本發明之用於基板處理系統的閥門元件,其包括:第一閥門501;第二閥門502;密封殼500位於第一閥門501和第二閥門502周圍,密封殼500具有第一開口505和第二開口506,第一開口505具有第一臺階504;驅動裝置503,用於使第一閥門501運動以密封第一臺階504,和/或使第二閥門502運動以密封第二開口506。 Please refer to Figure 12. The valve component used in the substrate processing system of the present invention includes: a first valve 501; a second valve 502; a sealing shell 500 located around the first valve 501 and the second valve 502, and the sealing shell 500 has a third An opening 505 and a second opening 506. The first opening 505 has a first step 504; the driving device 503 is used to move the first valve 501 to seal the first step 504, and/or to move the second valve 502 to seal the first step 504. Two openings 506.

在本實施例中,第一閥門501的形狀與第11圖所示實施例中第一閥門的形狀相同。 In this embodiment, the shape of the first valve 501 is the same as the shape of the first valve in the embodiment shown in FIG. 11 .

在本實施例中,第二閥門502密封第二開口506時,第二閥門502的側壁密封第二開口506。 In this embodiment, when the second valve 502 seals the second opening 506, the side wall of the second valve 502 seals the second opening 506.

在本實施例中,第一閥門501的構造與第二閥門502的形狀不同,其中,第一閥門501的形狀與圖11所示實施例相同。第二閥門502的形狀請參考第13圖。 In this embodiment, the structure of the first valve 501 is different from the shape of the second valve 502, wherein the shape of the first valve 501 is the same as that of the embodiment shown in FIG. 11 . Please refer to Figure 13 for the shape of the second valve 502.

請參考第13圖,第13圖是第12圖閥門元件中第二閥門的側視圖。 Please refer to Figure 13, which is a side view of the second valve in the valve assembly of Figure 12.

第二閥門502包括密封裝置502b,密封裝置502b位於第二閥門502的側壁。 The second valve 502 includes a sealing device 502b located on a side wall of the second valve 502 .

第14圖是本發明基板處理系統工作方法的流程圖。 Figure 14 is a flow chart of the working method of the substrate processing system of the present invention.

請參考第14圖,步驟S1:提供上述基板處理系統;步驟S2:利用驅動裝置使第一閥門運動和/或第二閥門運動,使第一閥門密封第一臺階,和/或使第二閥門密封第二基板傳輸口。 Please refer to Figure 14, step S1: provide the above substrate processing system; step S2: use the driving device to move the first valve and/or the second valve, so that the first valve seals the first step, and/or the second valve Seal the second substrate transfer port.

第一閥門用於密封第一臺階,有利於確保第一腔內維持真空環境;第二閥門用於密封第二基板傳輸口,有利於確保第二腔內維持真空環境。當第一閥門需要維護時,使第二閥門密封第二基板傳輸口,則第二腔內仍能維持真空環境,當第二閥門需要維護時,使第一閥門密封第一基板傳輸口,則第一腔內仍能維持真空環境。當第一腔或者第二腔內仍能維持真空環境,使得第一腔或者第二腔內仍能繼續進行半導體製程而無需停機,因此,有利於降低當機頻率,提高待處理基板的處理效率。 The first valve is used to seal the first step, which is beneficial to ensuring that the vacuum environment is maintained in the first cavity; the second valve is used to seal the second substrate transfer port, which is beneficial to ensuring that the vacuum environment is maintained in the second cavity. When the first valve needs maintenance, make the second valve seal the second substrate transfer port, then the vacuum environment can still be maintained in the second chamber. When the second valve needs maintenance, make the first valve seal the first substrate transfer port, then A vacuum environment can still be maintained in the first chamber. When the vacuum environment can still be maintained in the first cavity or the second cavity, the semiconductor process can still be continued in the first cavity or the second cavity without shutting down. Therefore, it is beneficial to reduce the frequency of downtime and improve the processing efficiency of the substrate to be processed. .

雖然本發明揭露如上,但本發明並非限定於此。任何本領域技術人員,在不脫離本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以申請專利範圍所限定的範圍為准。 Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the protection scope of the invention should be subject to the scope defined by the patent application.

200:第一腔 200: first cavity

201:第一基板傳輸口 201: First substrate transmission port

202:第二腔 202:Second chamber

203:第二基板傳輸口 203: Second substrate transmission port

204:密封殼 204:Sealed shell

205:第一閥門 205:First valve

206:第二閥門 206:Second valve

209:第一開口 209:First opening

210:第二開口 210:Second opening

211:第一臺階 211:The first step

Claims (18)

一種基板處理系統,其包括:一第一腔,該第一腔具有一第一基板傳輸口;一第二腔,該第二腔具有一第二基板傳輸口;一密封殼,位於該第一腔與該第二腔之間,該密封殼頂部具有一蓋板,該密封殼包括一第一開口和一第二開口,該第一開口對應於該第一基板傳輸口,該第二開口對應於該第二基板傳輸口,該密封殼與該第一基板傳輸口和該第二基板傳輸口連通,該第一基板傳輸口或該第一開口周圍設置一第一臺階;一第一閥門,位於該密封殼內;一第二閥門,位於該密封殼內;一驅動裝置,驅動該第一閥門和/或該第二閥門移動,使該第一閥門密封該第一臺階,和/或使該第二閥門密封該第二基板傳輸口。 A substrate processing system, which includes: a first chamber having a first substrate transfer port; a second chamber having a second substrate transfer port; a sealing shell located in the first Between the cavity and the second cavity, the top of the sealing shell has a cover plate. The sealing shell includes a first opening and a second opening. The first opening corresponds to the first substrate transfer port, and the second opening corresponds to In the second substrate transfer port, the sealing shell is connected to the first substrate transfer port and the second substrate transfer port, and a first step is provided around the first substrate transfer port or the first opening; a first valve, is located in the sealing shell; a second valve is located in the sealing shell; a driving device drives the first valve and/or the second valve to move, so that the first valve seals the first step, and/or makes the The second valve seals the second substrate transfer port. 如請求項1所述的基板處理系統,當該第一開口的開口面積大於該第一基板傳輸口的開口面積時,該第一閥門密封該第一基板傳輸口或者該第一開口周圍的該第一臺階。 As in the substrate processing system of claim 1, when the opening area of the first opening is larger than the opening area of the first substrate transfer port, the first valve seals the first substrate transfer port or the first substrate transfer port around the first opening. The first step. 如請求項1所述的基板處理系統,當該第一開口的開口面積小於等於該第一基板傳輸口的開口面積時,該第一閥門密封該第一開口周圍的該第一臺階。 As in the substrate processing system of claim 1, when the opening area of the first opening is less than or equal to the opening area of the first substrate transfer port, the first valve seals the first step around the first opening. 如請求項1所述的基板處理系統,當該第二開口的開口面積 大於該第二基板傳輸口的開口面積時,該第二閥門密封該第二基板傳輸口或該第二開口。 The substrate processing system according to claim 1, when the opening area of the second opening When the opening area is larger than the opening area of the second substrate transfer port, the second valve seals the second substrate transfer port or the second opening. 如請求項1所述的基板處理系統,當該第二開口的開口面積小於等於該第二基板傳輸口的開口面積時,該第二閥門密封該第二開口。 In the substrate processing system of claim 1, when the opening area of the second opening is less than or equal to the opening area of the second substrate transfer port, the second valve seals the second opening. 如請求項1所述的基板處理系統,其中,該第二閥門的側壁密封該第二基板傳輸口。 The substrate processing system of claim 1, wherein the side wall of the second valve seals the second substrate transfer port. 如請求項1所述的基板處理系統,當該第二基板傳輸口周圍或者該第二開口周圍具有一第二臺階,該第二閥門密封該第二臺階。 As in the substrate processing system of claim 1, when there is a second step around the second substrate transfer port or around the second opening, the second valve seals the second step. 如請求項1所述的基板處理系統,其中,該第一閥門與第二閥門的尺寸相同或者不同。 The substrate processing system of claim 1, wherein the first valve and the second valve have the same or different sizes. 如請求項1所述的基板處理系統,其中,該第一腔為製程腔,該第二腔為傳輸腔。 The substrate processing system of claim 1, wherein the first chamber is a process chamber and the second chamber is a transfer chamber. 如請求項9所述的基板處理系統,當該製程腔的數目大於1個,各該製程腔環繞傳輸腔,各該製程腔與該傳輸腔之間均具有該第一閥門、該第二閥門和該密封殼。 As for the substrate processing system described in claim 9, when the number of the process chambers is greater than 1, each process chamber surrounds the transfer chamber, and the first valve and the second valve are arranged between each process chamber and the transfer chamber. and the sealed shell. 如請求項1所述的基板處理系統,該第一腔為真空腔,該第二腔為傳輸腔。 As for the substrate processing system of claim 1, the first chamber is a vacuum chamber, and the second chamber is a transfer chamber. 如請求項1所述的基板處理系統,其中,該驅動裝置包括一動力裝置和與該動力裝置連接的一驅動桿,該第一閥門和該第二閥門固定於該驅動桿上。 The substrate processing system of claim 1, wherein the driving device includes a power device and a driving rod connected to the power device, and the first valve and the second valve are fixed on the driving rod. 一種用於基板處理系統的閥門元件,其包括: 一第一閥門;一第二閥門;一密封殼,包圍該第一閥門和該第二閥門,該密封殼具有一第一開口和一第二開口,該第一開口周圍具有一第一臺階,該密封殼頂部具有一蓋板;一驅動裝置,使該第一閥門移動以密封該第一臺階,和/或使該第二閥門移動以密封該第二開口。 A valve component for a substrate processing system, comprising: a first valve; a second valve; a sealing shell surrounding the first valve and the second valve, the sealing shell having a first opening and a second opening, and a first step surrounding the first opening, The top of the sealing shell has a cover plate; a driving device moves the first valve to seal the first step, and/or moves the second valve to seal the second opening. 如請求項13所述的閥門元件,其中,該第二閥門的側壁密封該第二開口。 The valve component of claim 13, wherein the side wall of the second valve seals the second opening. 如請求項13所述的閥門元件,其中,該第二開口周圍設置一第二臺階,該第二閥門密封該第二臺階。 The valve component of claim 13, wherein a second step is provided around the second opening, and the second valve seals the second step. 如請求項13所述的閥門元件,其中,該驅動裝置使該第一閥門向上移動以密封該第一臺階,和/或使該第二閥門朝向該第二開口移動以密封該第二開口。 The valve element of claim 13, wherein the driving device moves the first valve upward to seal the first step, and/or moves the second valve toward the second opening to seal the second opening. 一種基板處理系統的工作方法,其包括:提供如請求項1至請求項12所述的基板處理系統;利用該驅動裝置使該第一閥門運動和/或該第二閥門運動,使該第一閥門密封該第一臺階,和/或使該第二閥門密封該第二基板傳輸口。 A working method of a substrate processing system, which includes: providing the substrate processing system as described in claim 1 to claim 12; using the driving device to move the first valve and/or the second valve to cause the first valve to move. The valve seals the first step, and/or the second valve seals the second substrate transfer port. 如請求項17所述的工作方法,當該第一閥門密封該第一基板傳輸口時,更換該第二閥門;當該第二閥門密封該第二基板傳輸口時,更換該第一閥門。 In the working method described in claim 17, when the first valve seals the first substrate transfer port, the second valve is replaced; when the second valve seals the second substrate transfer port, the first valve is replaced.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060182534A1 (en) * 2004-12-17 2006-08-17 Tokyo Electron Limited Gate valve apparatus of vacuum processing system
US20140003892A1 (en) * 2011-03-18 2014-01-02 Tokyo Electron Limited Gate valve unit, substrate processing device and substrate processing method thereof
US20160351429A1 (en) * 2015-05-27 2016-12-01 Advanced Micro-Fabrication Equipment Inc, Shanghai Processing chamber, combination of processing chamber and loadlock, and system for processing substrates
TW201725649A (en) * 2015-10-22 2017-07-16 蘭姆研究公司 Automated replacement of consumable parts using interfacing chambers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913243B1 (en) * 2000-03-30 2005-07-05 Lam Research Corporation Unitary slot valve actuator with dual valves
US7494107B2 (en) * 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
JP4079157B2 (en) * 2005-04-12 2008-04-23 東京エレクトロン株式会社 Gate valve device and processing system
US7806383B2 (en) * 2007-06-01 2010-10-05 Applied Materials, Inc. Slit valve
JP5005512B2 (en) * 2007-11-07 2012-08-22 東京エレクトロン株式会社 A gate valve device, a vacuum processing device, and a method for opening a valve body in the gate valve device.
TWI462208B (en) * 2007-11-23 2014-11-21 Jusung Eng Co Ltd Slot valve assembly and method of operating the same
JP5725782B2 (en) * 2010-09-30 2015-05-27 株式会社ブイテックス Valve device
JP3198694U (en) * 2014-05-29 2015-07-16 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Device to reduce impact in slit valve door
KR20160119643A (en) * 2015-04-06 2016-10-14 주식회사 퓨젠 Rectangular gate vacuum valve and controlling method therefor, and semiconductor manufacturing apparatus
KR101597818B1 (en) * 2015-06-19 2016-02-25 주식회사 퓨젠 Rectangular gate vacuum valve
CN206301757U (en) * 2016-11-17 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 Cavity seal and semiconductor processing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060182534A1 (en) * 2004-12-17 2006-08-17 Tokyo Electron Limited Gate valve apparatus of vacuum processing system
US20140003892A1 (en) * 2011-03-18 2014-01-02 Tokyo Electron Limited Gate valve unit, substrate processing device and substrate processing method thereof
US20160351429A1 (en) * 2015-05-27 2016-12-01 Advanced Micro-Fabrication Equipment Inc, Shanghai Processing chamber, combination of processing chamber and loadlock, and system for processing substrates
TW201725649A (en) * 2015-10-22 2017-07-16 蘭姆研究公司 Automated replacement of consumable parts using interfacing chambers

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