CN206301757U - Cavity seal and semiconductor processing equipment - Google Patents
Cavity seal and semiconductor processing equipment Download PDFInfo
- Publication number
- CN206301757U CN206301757U CN201621245425.XU CN201621245425U CN206301757U CN 206301757 U CN206301757 U CN 206301757U CN 201621245425 U CN201621245425 U CN 201621245425U CN 206301757 U CN206301757 U CN 206301757U
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- cavity
- gate valve
- ring
- cavity seal
- valve plate
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Abstract
The utility model provides a kind of cavity seal, including gate valve, the gate valve includes body, valve plate and sealing ring, passage is formed with the body, the valve plate can be lifted in the body, and for opening and closing the passage, the sealing ring is arranged at the position that the valve plate is in contact with the body, shading ring is additionally provided between chamber and the gate valve, for isolating the accessory substance of the chamber generation and the sealing surface of the gate valve.Cavity seal and semiconductor processing equipment that the utility model is provided, can solve the problem that accessory substance forms solid granulates and ultimately results in the ring wear destruction of gate valve and cause process cavity vacuum leak problem at the sealing surface of gate valve.
Description
Technical field
The utility model belongs to semiconductor equipment manufacturing technology field, and in particular to a kind of cavity seal and semiconductor
Process equipment.
Background technology
Fig. 1 is the structural representation of existing etching apparatus, refers to Fig. 1, and the etching apparatus includes a transmission cavity TM
With a process cavity PM, transmission cavity TM is connected with process cavity PM, manipulator is provided with transmission cavity TM, for process cavity
PM transmits wafer or by the wafer transfer in process cavity PM；It is provided with the position that transmission cavity TM is connected with process cavity PM
Gate valve, gate valve includes body 11, valve plate 12 and sealing ring 13, and body 11 is fixedly installed, and transmission channel, valve are provided with body 11
Plate 12 is arranged in body 11, and can be lifted to open or close transmission channel in body 11, to ensure the work of process cavity PM
Skill vacuum sealing environment；Sealing ring 13 is used to seal the gap between valve plate 12 and body 11；In addition, in gate valve and process cavity PM
Between be additionally provided with resin thermal insulation board 2, resin thermal insulation board 2 towards the metal that the thin-wall construction in process cavity PM is hard sun treatment
Aluminium ring, the effect of resin thermal insulation board 2 is to keep apart temperature process cavity PM higher and gate valve, prevents high temperature to be transferred to transmission cavity
TM；The effect of metal aluminium ring is to prevent process gas from corrosion is caused to resin division board.
The main working process of above-mentioned etching apparatus is substantially：Before technique is carried out, controlling the valve plate 12 of gate valve will pass
Defeated passage is opened, by the manipulator inside transmission cavity TM by transmission channel by wafer transfer to process cavity PM, afterwards, machine
Tool hand channel is crossed transmission channel and is back in transmission cavity TM, then controls the valve plate 12 inside gate valve to close transmission channel, to work
Skill chamber PM is vacuumized and is carried out build-up of luminance technique, and when technique is carried out, gate valve is closed all the time.
Above-mentioned etching apparatus finds in actual applications：The easy broken invalid of sealing ring 13, causes the sealing of process cavity PM
Go wrong；Also it is accomplished by frequently changing gate valve, so as to have a strong impact on normal production and the stability of equipment of technique.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art, it is proposed that a kind of cavity seal
Structure and semiconductor processing equipment, can solve the problem that accessory substance forms solid granulates and ultimately results in gate valve at the sealing surface of gate valve
Ring wear destruction and cause process cavity vacuum leak problem.
One of to solve the above problems, the utility model provides a kind of cavity seal, including gate valve, the gate valve
Including body, valve plate and sealing ring, passage is formed with the body, the valve plate can be lifted in the body, for beating
The open and close passage, the sealing ring is arranged at the position that the valve plate is in contact with the body, in chamber and institute
State and be additionally provided with shading ring between gate valve, the sealing surface for isolating accessory substance that the chamber produces and the gate valve.
Preferably, it is formed with ring baffle on the shading ring；The ring baffle is arranged in the passage and close
At the position of the valve plate；The ring baffle is set along the stop accessory substance direction of motion.
Preferably, the shading ring is made of Heat Conduction Material.
Preferably, the Heat Conduction Material includes metal material.
Preferably, the metal material includes aluminium alloy.
Preferably, the surface of the shading ring is to carry out the surface after hard anodizing treatment.
The utility model also provides a kind of semiconductor processing equipment, including interconnected process cavity and transmission cavity, setting
Cavity seal at the communicating position of process cavity and transmission cavity, described cavity seal the utility model provides above-mentioned
Cavity seal.
Preferably, the process cavity is plasma chamber.
The utility model has the advantages that：
The utility model cavity seal, by being additionally provided with shading ring, shading ring between chamber and the gate valve
For isolating the accessory substance of the chamber generation and the sealing surface of the gate valve, can solve the problem that accessory substance at the sealing surface of gate valve
Form solid granulates and ultimately result in the ring wear destruction of gate valve and cause process cavity vacuum leak problem.
The semiconductor processing equipment that the utility model is provided, the shading ring of the utility model offer is used due to it, therefore,
Can solve the problem that accessory substance to form solid granulates at the sealing surface of gate valve and ultimately result in the ring wear destruction of gate valve and lead
Cause process cavity vacuum leak problem.
Brief description of the drawings
Fig. 1 is the structural representation of existing etching apparatus；
Fig. 2 is the partial structurtes of the semiconductor processing equipment of cavity seal provided using the utility model embodiment
Schematic diagram.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, come below in conjunction with the accompanying drawings to this
The cavity seal and semiconductor processing equipment that utility model is provided are described in detail.
Fig. 2 is for using the part of the semiconductor processing equipment of the cavity seal provided using the utility model embodiment
Structural representation, refers to Fig. 2, and the semiconductor processing equipment includes an a transmission cavity TM and process cavity PM, the transmission cavity
TM is connected with process cavity PM, and cavity seal is arranged between transmission cavity TM and process cavity PM；It is provided with transmission cavity TM
Manipulator, for transmitting wafer or by the wafer transfer in process cavity PM to process cavity PM.
Cavity seal includes gate valve, and gate valve includes body 11, valve plate 12 and sealing ring 13, is formed with body 11 logical
Road, valve plate 12 can be lifted in body 11, and for opening and closing passage, sealing ring 13 is arranged on valve plate 12 and connects with body 11
At tactile position, for sealing gap therebetween；Shading ring 14 is additionally provided between chamber (process cavity PM) and gate valve,
For isolating the accessory substance of chamber generation and the sealing surface of gate valve.
Before the technical problem of sealing ring the cracky how shading ring that description the utility model is provided solves gate valve,
First to for sealing ring cracky the reason for, is analyzed：Technical process constantly is carried out with reaction chamber TM, also just constantly
Ground generation accessory substance, simultaneously because communicated between reaction chamber TM and the left side of gate valve, therefore, gaseous accessory substance can be continuous
Ground is penetrated on sealing surface by the gap between the valve plate 12 and body 11 of gate valve, and because the close transmission cavity TM of gate valve
Side (i.e. right side in Fig. 2) temperature is relatively low, and easily quickly cooling condenses life at the sealing surface of sealing ring 13 to cause accessory substance
Into solid granulates and viscous at the sealing surface, so, the valve plate 12 of gate valve carries out athletic meeting so that sealing ring 13 and sealing surface
The solid granulates at place constantly rub, and ultimately result in sealing ring damage.
The utility model cavity seal, by shading ring is additionally provided between chamber and gate valve, shading ring 14 is used
The accessory substance and the sealing surface of gate valve produced in isolation chamber, can solve the problem that accessory substance forms solid-state at the sealing surface of gate valve
Grain and ultimately result in the wear-out failure of sealing ring 13 of gate valve and cause process cavity vacuum leak problem.
In the present embodiment, specifically, it is formed with ring baffle 141 on shading ring 14；Ring baffle 141 is arranged on passage
At the position of interior and close valve plate 12；Ring baffle 141 is set along the stop accessory substance direction of motion, as shown in Fig. 2 therefore, can
To be effectively physically separated accessory substance and sealing surface, such that it is able to avoid accessory substance that solid-state is formed at sealing surface
Grain.
It is appreciated that in actual applications, should make ring baffle 141 do not contacted in other words with valve plate 12 exist it is certain between
Gap, to avoid the elevating movement on valve plate 12 from producing influence.In addition, the internal diameter size of ring baffle 141 should be ensured that to machine
The process of tool hand transmission wafer does not produce influence.
Preferably, shading ring 141 is made of Heat Conduction Material, and this temperature that can aid in process cavity PM is transferred to gate valve
Left part so that the temperature of gate valve left part is higher, so, can avoid to a certain extent accessory substance cool down condense
Generation solid granulates.
Specifically, Heat Conduction Material includes but is not limited to metal material.
Further specifically, metal material includes but is not limited to aluminium alloy.
Preferably, the surface of shading ring 14 is to carry out the surface after hard anodizing treatment, can so avoid technique
Gas in the PM of chamber corrodes to the surface of shading ring 14.
It is that the radial cross-sectional shape of shading ring 14 is related to the passage in the body 11 of gate valve to need described herein, if
The radial direction interface of the passage is circle, then the radial cross-sectional shape annulus of shading ring 14；If the radial direction interface of the passage is rectangle,
The then radial cross-sectional shape straight-flanked ring of shading ring 14.
Used as another technical scheme, the utility model also provides a kind of semiconductor processing equipment, as shown in Fig. 2 bag
Include interconnected process cavity PM and transmission cavity TM, the cavity seal being arranged at the communicating position of process cavity PM and transmission cavity TM
Structure, the cavity seal that cavity seal is provided using the utility model above-described embodiment.
Specifically, above-mentioned process cavity includes but is not limited to be plasma chamber, or chemical vapor deposition chamber,
Physical vapor deposition chamber etc..
The semiconductor processing equipment that the utility model is provided, the cavity seal knot of above-described embodiment offer is used due to it
Structure, the sealing ring 13 for forming solid granulates at the sealing surface of gate valve and ultimately resulting in gate valve therefore, it is possible to solve accessory substance grinds
Damage destruction and cause process cavity PM vacuum leak problems.
It is understood that embodiment of above be merely to illustrate that principle of the present utility model and use it is exemplary
Implementation method, but the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case of the spirit and essence of utility model, various changes and modifications can be made therein, and these variations and modifications are also considered as this reality
With new protection domain.
Claims (8)
1. a kind of cavity seal, including gate valve, the gate valve includes being formed in body, valve plate and sealing ring, the body
There is passage, the valve plate can be lifted in the body, for opening and closing the passage, the sealing ring is arranged on described
At the position that valve plate is in contact with the body, it is characterised in that shading ring is additionally provided between chamber and the gate valve, use
In the accessory substance and the sealing surface of the gate valve of isolating the chamber generation.
2. cavity seal according to claim 1, ring baffle is formed with the shading ring；
The ring baffle is arranged in the passage and at the position of the valve plate；
The ring baffle is set along the stop accessory substance direction of motion.
3. cavity seal according to claim 1, it is characterised in that the shading ring is made of Heat Conduction Material.
4. cavity seal according to claim 3, it is characterised in that the Heat Conduction Material includes metal material.
5. cavity seal according to claim 4, it is characterised in that the metal material includes aluminium alloy.
6. cavity seal according to claim 4, it is characterised in that the surface of the shading ring is to carry out hard sun
Surface after the oxidation processes of pole.
7. a kind of semiconductor processing equipment, including interconnected process cavity and transmission cavity, it is arranged on process cavity and transmission cavity
Cavity seal at communicating position, it is characterised in that the cavity seal uses claim 1-6 any one institute
The cavity seal stated.
8. semiconductor processing equipment according to claim 7, it is characterised in that the process cavity is plasma chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621245425.XU CN206301757U (en) | 2016-11-17 | 2016-11-17 | Cavity seal and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621245425.XU CN206301757U (en) | 2016-11-17 | 2016-11-17 | Cavity seal and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206301757U true CN206301757U (en) | 2017-07-04 |
Family
ID=59211841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621245425.XU Active CN206301757U (en) | 2016-11-17 | 2016-11-17 | Cavity seal and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206301757U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556308A (en) * | 2018-06-01 | 2019-12-10 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| CN111326385A (en) * | 2018-12-13 | 2020-06-23 | 江苏鲁汶仪器有限公司 | Vacuum chamber |
| CN112530829A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Substrate processing system, valve plate assembly and working method of substrate processing system |
| CN112530830A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Substrate processing system, valve plate assembly and working method of substrate processing system |
| CN114352171A (en) * | 2021-12-30 | 2022-04-15 | 苏州子山半导体科技有限公司 | Novel vacuum sealing door plate structure |
| WO2023284018A1 (en) * | 2021-07-16 | 2023-01-19 | 长鑫存储技术有限公司 | Gate valve device, cleaning method, and mechanical equipment |
| CN116553094A (en) * | 2023-06-28 | 2023-08-08 | 天津力矩自动化科技有限公司 | Power transmission mechanism suitable for reversing movement of sliding part |
| US11933416B2 (en) | 2021-07-16 | 2024-03-19 | Changxin Memory Technologies, Inc. | Gate valve device, cleaning method and mechanical apparatus |
-
2016
- 2016-11-17 CN CN201621245425.XU patent/CN206301757U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556308A (en) * | 2018-06-01 | 2019-12-10 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| CN110556308B (en) * | 2018-06-01 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| CN111326385A (en) * | 2018-12-13 | 2020-06-23 | 江苏鲁汶仪器有限公司 | Vacuum chamber |
| CN112530829A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Substrate processing system, valve plate assembly and working method of substrate processing system |
| CN112530830A (en) * | 2019-09-18 | 2021-03-19 | 中微半导体设备(上海)股份有限公司 | Substrate processing system, valve plate assembly and working method of substrate processing system |
| WO2023284018A1 (en) * | 2021-07-16 | 2023-01-19 | 长鑫存储技术有限公司 | Gate valve device, cleaning method, and mechanical equipment |
| US11933416B2 (en) | 2021-07-16 | 2024-03-19 | Changxin Memory Technologies, Inc. | Gate valve device, cleaning method and mechanical apparatus |
| CN114352171A (en) * | 2021-12-30 | 2022-04-15 | 苏州子山半导体科技有限公司 | Novel vacuum sealing door plate structure |
| CN116553094A (en) * | 2023-06-28 | 2023-08-08 | 天津力矩自动化科技有限公司 | Power transmission mechanism suitable for reversing movement of sliding part |
| CN116553094B (en) * | 2023-06-28 | 2023-09-08 | 天津力矩自动化科技有限公司 | Power transmission mechanism suitable for reversing movement of sliding part |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |