TWI820776B - Fluorine detection in a gas discharge light source - Google Patents

Fluorine detection in a gas discharge light source Download PDF

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TWI820776B
TWI820776B TW111124478A TW111124478A TWI820776B TW I820776 B TWI820776 B TW I820776B TW 111124478 A TW111124478 A TW 111124478A TW 111124478 A TW111124478 A TW 111124478A TW I820776 B TWI820776 B TW I820776B
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fluorine
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TW202242376A (en
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歐瑪 祖里塔
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美商希瑪有限責任公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
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    • G01N33/0013Sample conditioning by a chemical reaction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
    • G01N33/0052Gaseous halogens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/03Constructional details of gas laser discharge tubes
    • H01S3/036Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258F2, i.e. molecular fluoride is comprised for lasing around 157 nm

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Abstract

A method includes: receiving at least a portion of a mixed gas from a gas discharge chamber, wherein the mixed gas includes fluorine; reacting the fluorine in the mixed gas portion with a hydroxide to form a new gas mixture including oxygen and water; sensing a concentration of water within the new gas mixture; and estimating a concentration of fluorine within the mixed gas portion based on the sensed concentration of water.

Description

氣體放電光源中之氟偵測Fluorine detection in gas discharge light source

所揭示主題係關於混合氣體中之氟之偵測。The disclosed subject matter relates to the detection of fluorine in mixed gases.

在光微影中所使用之一種類型的氣體放電光源稱為準分子光源或雷射。準分子光源通常使用一或多種稀有氣體,諸如氬氣、氪氣或氙氣與反應氣體(諸如氟或氯)之組合。準分子光源之名稱衍生自在電刺激(所供應能量)及(氣體混合物之)高壓的適當條件下產生稱為準分子之偽分子的實情,其僅以供能狀態存在且在紫外線範圍內產生經放大光。One type of gas discharge light source used in photolithography is called an excimer light source or laser. Excimer light sources typically use a combination of one or more rare gases, such as argon, krypton, or xenon, and a reactive gas, such as fluorine or chlorine. The name of the excimer light source is derived from the fact that under appropriate conditions of electrical stimulation (supplied energy) and high pressure (of the gas mixture) pseudo-molecules called excimers are produced, which exist only in an energized state and produce effects in the ultraviolet range. Amplify the light.

準分子光源產生具有在深紫外線(DUV)範圍內之波長的光束,且此光束用以使光微影設備中之半導體基板(或晶圓)圖案化。可使用單個氣體放電腔室或使用複數個氣體放電腔室來建構準分子光源。Excimer light sources generate beams with wavelengths in the deep ultraviolet (DUV) range, and this beam is used to pattern semiconductor substrates (or wafers) in photolithography equipment. An excimer light source can be constructed using a single gas discharge chamber or using a plurality of gas discharge chambers.

在一些通用態樣中,一種方法包括:自一氣體放電腔室接收一混合氣體之至少一部分,該混合氣體包括氟;使該混合氣體部分中之該氟與一氫氧化物反應以形成包括氧氣及水之一新氣體混合物;感測該新氣體混合物內之水之一濃度;及基於水之感測到的濃度估計該混合氣體部分內之氟之一濃度。In some general aspects, a method includes: receiving at least a portion of a mixed gas including fluorine from a gas discharge chamber; reacting the fluorine in the mixed gas portion with a hydroxide to form a gas mixture including oxygen and a new gas mixture of water; sensing a concentration of water in the new gas mixture; and estimating a concentration of fluorine in the mixed gas portion based on the sensed concentration of water.

實施可包括以下特徵中之一或多者。舉例而言,該氫氧化物可包括一鹼土金屬氫氧化物。該氫氧化物可缺少一鹼金屬及碳。Implementations may include one or more of the following features. For example, the hydroxide may include an alkaline earth metal hydroxide. The hydroxide may lack an alkali metal and carbon.

該混合氣體可為包括一增益介質與一緩衝氣體之至少一混合物之一準分子雷射氣體。The mixed gas may be an excimer laser gas including at least a mixture of a gain medium and a buffer gas.

該方法亦可包括:基於該混合氣體部分中之氟之經估計濃度調整來自一組氣體供應器之一氣體混合物中之氟之一相對濃度;及藉由將經調整氣體混合物自該等氣體供應器添加至該氣體放電腔室來進行一氣體更新。可藉由利用一增益介質及一緩衝氣體以及氟之一混合物填充該氣體放電腔室來進行該氣體更新。可藉由利用一增益介質填充該氣體放電腔室來利用該增益介質與該緩衝氣體之該混合物填充該氣體放電腔室,該增益介質包括一稀有氣體及一鹵素,及包括一惰性氣體之一緩衝氣體。該稀有氣體可包括氬氣、氪氣或氙氣;該鹵素可包括氟;且該惰性氣體可包括氦氣或氖氣。可藉由以下操作以利用該增益介質及該緩衝氣體以及氟之該混合物填充該氣體放電腔室:將該增益介質及該緩衝氣體以及氟之該混合物添加至該氣體放電腔室中之一現有混合氣體;或至少利用該增益介質與該緩衝氣體以及氟之該混合物替換該氣體放電腔室中之一現有混合氣體。可藉由進行一氣體再填充方案或一氣體注入方案中之一或多者來進行該氣體更新。The method may also include adjusting a relative concentration of fluorine in a gas mixture from a set of gas supplies based on an estimated concentration of fluorine in the portion of the mixed gas; and by transferring the adjusted gas mixture from the gas supplies A device is added to the gas discharge chamber to perform a gas update. The gas renewal may be performed by filling the gas discharge chamber with a gain medium and a mixture of buffer gas and fluorine. The gas discharge chamber may be filled with the mixture of the gain medium and the buffer gas by filling the gas discharge chamber with a gain medium, the gain medium including a rare gas and a halogen, and including one of an inert gas Buffer gas. The rare gas may include argon, krypton, or xenon; the halogen may include fluorine; and the inert gas may include helium or neon. The gas discharge chamber may be filled with the gain medium and the mixture of buffer gas and fluorine by adding the gain medium and the mixture of buffer gas and fluorine to an existing gas discharge chamber. Mixed gas; or at least replace one of the existing mixed gases in the gas discharge chamber with the mixture of the gain medium, the buffer gas and fluorine. The gas renewal may be performed by performing one or more of a gas refilling protocol or a gas injection protocol.

可藉由在對該氣體放電腔室進行一氣體更新之前接收該混合氣體部分而自該氣體放電腔室接收該混合氣體之該部分。該氣體更新可包括將一氣體混合物自一組氣體供應器添加至該氣體放電腔室,該氣體混合物包括至少一些氟。The portion of the mixed gas may be received from the gas discharge chamber by receiving the portion of the mixed gas prior to performing a gas update to the gas discharge chamber. The gas refresh may include adding a gas mixture from a set of gas suppliers to the gas discharge chamber, the gas mixture including at least some fluorine.

可藉由進行一氣體再填充方案或一氣體注入方案中之一或多者來進行該氣體更新。The gas renewal may be performed by performing one or more of a gas refilling protocol or a gas injection protocol.

可藉由自該氣體放電腔室放出該混合氣體及將所放出之混合氣體引導至容納該氫氧化物之一反應容器而自該氣體放電腔室接收該混合氣體之該部分。該方法亦可包括:將該新氣體混合物自該反應容器轉移至一量測容器,其中該感測該新氣體混合物內之水之該濃度包含感測在該量測容器內之該新氣體混合物內之水之該濃度。可藉由將該量測容器內之一感測器暴露於該新氣體混合物來感測該新氣體混合物內之水之該濃度。The portion of the mixed gas may be received from the gas discharge chamber by releasing the mixed gas from the gas discharge chamber and directing the released mixed gas to a reaction vessel containing the hydroxide. The method may also include: transferring the new gas mixture from the reaction vessel to a measurement vessel, wherein sensing the concentration of water in the new gas mixture includes sensing the new gas mixture in the measurement vessel The concentration of the water inside. The concentration of water in the new gas mixture can be sensed by exposing a sensor in the measurement vessel to the new gas mixture.

該方法亦可包括:在已估計該混合氣體部分內之氟之該濃度之後,自該量測容器排出該新氣體混合物。The method may also include discharging the new gas mixture from the measurement vessel after the concentration of fluorine in the mixed gas portion has been estimated.

可藉由在不利用另一材料稀釋該混合氣體部分之情況下感測該新氣體混合物內之水之該濃度來感測該新氣體混合物內之水之該濃度。The concentration of water in the new gas mixture can be sensed by sensing the concentration of water in the new gas mixture without diluting the portion of the mixed gas with another material.

該混合氣體部分可藉由形成加上水之一無機氟化物化合物來與該氫氧化物反應以形成包括水之該新氣體混合物。該氫氧化物可包括氫氧化鈣,且該無機氟化物化合物可包括氟化鈣。The mixed gas portion may react with the hydroxide by forming an inorganic fluoride compound plus water to form the new gas mixture including water. The hydroxide may include calcium hydroxide, and the inorganic fluoride compound may include calcium fluoride.

可藉由在該反應開始之後僅在已過去一預定時間段之後才感測該新氣體混合物內之水之該濃度來感測該新氣體混合物內之水之該濃度。The concentration of water in the new gas mixture may be sensed by sensing the concentration of water in the new gas mixture only after a predetermined period of time has elapsed after the reaction has begun.

該混合氣體部分可為一排出氣體且該混合氣體部分可藉由自該排出氣體移除氟而與該氫氧化物反應以形成包括水之該新氣體混合物。The mixed gas portion can be a vent gas and the mixed gas portion can react with the hydroxide to form the new gas mixture including water by removing fluorine from the vent gas.

可藉由僅基於水之該感測到的濃度及該混合氣體部分中之氟與該氫氧化物之間的化學反應來估計而基於水之該感測到的濃度估計該混合氣體部分內之氟之該濃度。The gas mixture within the gas mixture portion may be estimated based on the sensed concentration of water by estimating based solely on the sensed concentration of water and the chemical reaction between the fluorine and the hydroxide in the gas mixture portion. The concentration of fluorine.

該混合氣體部分中之氟之該濃度可為約百萬分之500至2000。The concentration of fluorine in the mixed gas portion may be about 500 to 2000 parts per million.

形成包括水之該新氣體混合物的該混合氣體部分中之該氟與該氫氧化物之該反應為穩定的。The reaction of the fluorine and the hydroxide in the portion of the mixed gas forming the new gas mixture including water is stable.

該混合氣體部分中之該氟可藉由進行一反應而與該氫氧化物反應以形成包括水之該氣體混合物,該反應為線性且提供該混合氣體部分中之氟之該濃度與該新氣體混合物中該水之該濃度之間的一直接相關性。The fluorine in the mixed gas portion can react with the hydroxide to form the gas mixture including water by performing a reaction that is linear and provides the concentration of fluorine in the mixed gas portion and the new gas There is a direct correlation between the concentration of water in a mixture.

該方法亦可包括感測該新氣體混合物內之氧氣之一濃度,且估計該混合氣體部分內之氟之該濃度可另外基於氧氣之感測到的濃度。The method may also include sensing a concentration of oxygen within the new gas mixture, and estimating the concentration of fluorine within the mixed gas portion may further be based on the sensed concentration of oxygen.

在其他通用態樣中,一種方法包括:藉由將一第一氣體混合物自一組氣體供應器添加至一氣體放電腔室來進行一第一氣體更新;在該第一氣體更新之後移除來自該氣體放電腔室之一混合氣體之至少一部分,該混合氣體包括氟;使經移除之混合氣體部分之該氟與一反應物反應以形成包括氧氣及水之一新氣體混合物;感測該新氣體混合物內之水之一濃度;基於水之感測到的濃度估計該經移除之混合氣體部分內之氟之一濃度;基於該經移除之混合氣體中之氟之經估計濃度調整來自該組氣體供應器之一第二氣體混合物中之氟之一相對濃度;及藉由將經調整第二氣體混合物自該等氣體供應器添加至該氣體放電腔室來進行一第二氣體更新。In other general aspects, a method includes performing a first gas refresh by adding a first gas mixture from a set of gas suppliers to a gas discharge chamber; removing the gas from the gas discharge chamber after the first gas refresh. at least a portion of a mixed gas in the gas discharge chamber, the mixed gas including fluorine; reacting the fluorine in the removed portion of the mixed gas with a reactant to form a new gas mixture including oxygen and water; sensing the a concentration of water in the new gas mixture; an estimate of a concentration of fluorine in the removed portion of the gas mixture based on the sensed concentration of water; an adjustment based on the estimated concentration of fluorine in the removed gas mixture a relative concentration of fluorine in a second gas mixture from the set of gas suppliers; and performing a second gas update by adding an adjusted second gas mixture from the gas suppliers to the gas discharge chamber .

實施可包括以下特徵中之一或多者。舉例而言,該反應物可包括氫氧化物。該氣體放電腔室中之該混合氣體可包括一準分子雷射氣體,該準分子雷射氣體包括一增益介質與一緩衝氣體之至少一混合物。Implementations may include one or more of the following features. For example, the reactants may include hydroxides. The mixed gas in the gas discharge chamber may include an excimer laser gas including at least a mixture of a gain medium and a buffer gas.

可藉由在不量測該經移除之混合氣體部分內之該氟濃度之情況下估計該經移除之混合氣體部分內之該氟濃度來基於水之該感測到的濃度估計該經移除之混合氣體部分內之氟之該濃度。The fluorine concentration in the removed mixed gas portion can be estimated based on the sensed concentration of water by estimating the fluorine concentration in the removed mixed gas portion without measuring the fluorine concentration in the removed mixed gas portion. This concentration of fluorine in the portion of the mixed gas removed.

在其他通用態樣中,一種設備包括:一偵測設備,其流體地連接至一準分子氣體放電系統之每一氣體放電腔室;及一控制系統,其連接至該偵測設備。每一偵測設備包括:一容器,其界定容納一氫氧化物且流體地連接至該氣體放電腔室以用於自該反應空腔中之該氣體放電腔室接收包括氟之混合氣體之一反應空腔;及一水感測器。該容器使得接收到之混合氣體之該氟與該氫氧化物之間的一反應能夠形成包括氧氣及水之一新氣體混合物。該水感測器經組態以流體地連接至該新氣體混合物,且當流體地連接至該新氣體混合物時,感測該新氣體混合物內之水之一量。該控制系統經組態以:自該水感測器接收輸出且估計自該氣體放電腔室接收到之該混合氣體中之氟之一濃度;判定是否應基於該混合氣體中之氟之該經估計濃度而調整來自一氣體維持系統之一氣體供應系統的一氣體混合物中之氟之一濃度;及將一信號發送至該氣體維持系統,指示該氣體維持系統在對該氣體放電腔室之一氣體更新期間調整自該氣體維持系統之該氣體供應系統供應至該氣體放電腔室之一氣體混合物中之氟之該相對濃度。In other general aspects, an apparatus includes: a detection device fluidly connected to each gas discharge chamber of an excimer gas discharge system; and a control system connected to the detection device. Each detection device includes: a container defined to contain a hydroxide and fluidly connected to the gas discharge chamber for receiving one of the mixed gases including fluorine from the gas discharge chamber in the reaction cavity a reaction cavity; and a water sensor. The container enables a reaction between the fluorine and the hydroxide of the received mixed gas to form a new gas mixture including oxygen and water. The water sensor is configured to be fluidly connected to the new gas mixture and, when fluidly connected to the new gas mixture, sense an amount of water within the new gas mixture. The control system is configured to: receive an output from the water sensor and estimate a concentration of fluorine in the mixed gas received from the gas discharge chamber; determine whether the concentration of fluorine in the mixed gas should be based on the concentration of fluorine in the mixed gas. Estimating the concentration to adjust a concentration of fluorine in a gas mixture from a gas supply system of a gas maintenance system; and sending a signal to the gas maintenance system instructing the gas maintenance system to operate in one of the gas discharge chambers The relative concentration of fluorine in a gas mixture supplied from the gas supply system of the gas maintenance system to the gas discharge chamber is adjusted during gas updating.

實施可包括以下特徵中之一或多者。舉例而言,該準分子氣體放電系統之每一氣體放電腔室可容納一能量源且可含有包括一準分子雷射氣體之一氣體混合物,該準分子雷射氣體包括一增益介質及氟。Implementations may include one or more of the following features. For example, each gas discharge chamber of the excimer gas discharge system may contain an energy source and may contain a gas mixture including an excimer laser gas including a gain medium and fluorine.

該偵測設備亦可包括一量測容器,其流體地連接至該反應容器之該反應空腔且界定經組態以接收該新氣體混合物之一量測空腔。該水感測器可經組態以感測該量測空腔中之該新氣體混合物內之水之一量。The detection device may also include a measurement vessel fluidly connected to the reaction cavity of the reaction vessel and defining a measurement cavity configured to receive the new gas mixture. The water sensor may be configured to sense an amount of water in the new gas mixture in the measurement cavity.

該經移除之混合氣體部分中之氟之該濃度可為約百萬分之500至2000。The concentration of fluorine in the removed portion of the mixed gas may be about 500 to 2000 parts per million.

該準分子氣體放電系統可包括複數個氣體放電腔室,且該偵測設備可流體地連接至該複數個氣體放電腔室中之每一氣體放電腔室。該偵測設備可包括複數個容器,每一容器界定容納該氫氧化物之一反應空腔,且每一容器流體地連接至該等氣體放電腔室中之一者且該偵測設備包括複數個水感測器,每一水感測器均與一個容器相關聯。該偵測設備可包括複數個容器,每一容器界定容納該氫氧化物之一反應空腔,且每一容器流體地連接至該等氣體放電腔室中之一者且該偵測設備包括與所有該等容器流體地連接之單個水感測器。The excimer gas discharge system may include a plurality of gas discharge chambers, and the detection device may be fluidly connected to each of the plurality of gas discharge chambers. The detection device may include a plurality of containers, each container defining a reaction cavity containing the hydroxide, and each container fluidly connected to one of the gas discharge chambers and the detection device may include a plurality of water sensors, each water sensor is associated with a container. The detection device may include a plurality of vessels, each vessel defining a reaction cavity containing the hydroxide, and each vessel being fluidly connected to one of the gas discharge chambers and the detection device including A single water sensor with all such containers fluidly connected.

參考圖1,設備100包括偵測設備105,其經組態以使用市售氟感測器量測或估計腔室110內之氣體混合物107中之氟(F)之濃度而無需直接量測氣體混合物107中之氟之濃度。在室溫下,氟為雙原子分子之氣體且由其分子結構F 2表示。如本文所使用之術語「氟」因此係指分子氟F 2。腔室110中之氟分子F 2之濃度在過高而不准許氟之直接偵測的範圍內。舉例而言,腔室110中之氟之濃度大於約百萬分之(ppm)500且可為約1000 ppm或至多約2000 ppm。然而,市售氟感測器通常在10 ppm下飽和,因此使得使用市售氟感測器直接量測腔室110中之氟之濃度係不現實的。實際上,偵測設備105實現將來自腔室110之氟轉化成一或多個組分(其包括水)之化學反應,該一或多個組分中之每一者可利用感測設備116之市售感測器115偵測到及量測。偵測設備105可基於在化學反應之後存在之水之量(如由感測器115所供應)且基於關於該化學反應之資訊計算或估計在開始該化學反應之前存在多少氟。 Referring to FIG. 1 , apparatus 100 includes a detection apparatus 105 configured to measure or estimate the concentration of fluorine (F) in gas mixture 107 within chamber 110 using a commercially available fluorine sensor without directly measuring the gas. Fluorine concentration in mixture 107. At room temperature, fluorine is a diatomic molecule gas and is represented by its molecular structure F2 . The term "fluorine" as used herein therefore refers to molecular fluorine F2 . The concentration of fluorine molecules F2 in chamber 110 is in a range that is too high to allow direct detection of fluorine. For example, the concentration of fluorine in chamber 110 is greater than about 500 parts per million (ppm) and may be about 1000 ppm or up to about 2000 ppm. However, commercially available fluorine sensors usually saturate at 10 ppm, making it impractical to use commercially available fluorine sensors to directly measure the fluorine concentration in the chamber 110 . In effect, detection device 105 implements a chemical reaction that converts fluorine from chamber 110 into one or more components (including water), each of which may utilize the sensing device 116 Commercially available sensors 115 detect and measure. The detection device 105 may calculate or estimate how much fluorine was present before starting the chemical reaction based on the amount of water present after the chemical reaction (as supplied by the sensor 115) and based on information about the chemical reaction.

為了使此估計準確,偵測設備105可假定將來自腔室110之氟轉化成組分的化學反應為線性反應,其中在開始化學反應之前氟之濃度與在結束化學反應時水之濃度之間存在直接相關性。或,偵測設備105可假定完成氟之轉化(且因此,在化學反應之後氣體中不存在殘餘分子氟F 2)。 To make this estimate accurate, detection device 105 may assume that the chemical reaction that converts fluorine from chamber 110 into components is a linear reaction, where the concentration of fluorine before starting the chemical reaction and the concentration of water at the end of the chemical reaction are between There is a direct correlation. Alternatively, the detection device 105 may assume that the conversion of fluorine is complete (and therefore, no residual molecular fluorine F2 is present in the gas after the chemical reaction).

設備100與氣體維持系統120連通,該氣體維持系統120至少包括經由套管系統127流體地連接至腔室110之氣體供應系統。如下文詳細論述,氣體維持系統120包括一或多個氣體供應器及控制單元(其亦包括閥系統)以用於控制來自供應器之氣體中之哪些經由套管系統127轉移進入或離開腔室110。The apparatus 100 is in communication with a gas maintenance system 120 that includes at least a gas supply system fluidly connected to the chamber 110 via a cannula system 127 . As discussed in detail below, the gas maintenance system 120 includes one or more gas suppliers and a control unit (which also includes a valve system) for controlling which of the gases from the suppliers are transferred into or out of the chamber via the casing system 127 110.

設備100包括控制器130,該控制器130自水感測器115接收輸出且計算在開始化學反應之前存在多少氟以估計氣體混合物107中之氟之量。控制器130使用此資訊以判定是否需要調整氣體混合物107中之氟之濃度。控制器130因此基於該判定來判定如何調整氣體維持系統120之供應器中待轉移進入或離開腔室110之氣體之相對量。控制器130將信號發送至氣體維持系統120,指示其在對腔室110之氣體更新期間調整氣體混合物107中之氟之相對濃度。The apparatus 100 includes a controller 130 that receives output from the water sensor 115 and calculates how much fluorine is present before starting a chemical reaction to estimate the amount of fluorine in the gas mixture 107 . Controller 130 uses this information to determine whether the fluorine concentration in gas mixture 107 needs to be adjusted. Controller 130 therefore determines how to adjust the relative amounts of gas in the supplies of gas maintenance system 120 to be transferred into or out of chamber 110 based on this determination. Controller 130 sends a signal to gas maintenance system 120 instructing it to adjust the relative concentration of fluorine in gas mixture 107 during gas refresh of chamber 110 .

偵測設備105包括界定容納氫氧化物Σ(-OH) 145之反應空腔140之反應容器135,其中Σ為金屬。反應空腔140經由套管137流體地連接至腔室110以自腔室110接收包括氟之混合氣體150。儘管未展示,但一或多個流體控制裝置(諸如閥)可置放於套管137中以控制混合氣體150何時引導至反應空腔140之時序,以及控制混合氣體150流動至反應容器135中之速率。以此方式,反應空腔140使得接收到之混合氣體150之氟與氫氧化物145之間的化學反應能夠形成新氣體混合物155。界定反應空腔140之反應容器135之內部應由非反應性材料製成以免干擾或更改接收到之混合氣體150之氟與氫氧化物145之間的化學反應。舉例而言,反應容器135之內部可由諸如不鏽鋼或蒙納合金(Monel metal)之非反應性金屬製成。The detection device 105 includes a reaction vessel 135 defining a reaction cavity 140 containing a hydroxide Σ(-OH) 145, where Σ is a metal. Reaction cavity 140 is fluidly connected to chamber 110 via sleeve 137 to receive mixed gas 150 including fluorine from chamber 110 . Although not shown, one or more fluid control devices (such as valves) may be placed in cannula 137 to control the timing of when mixed gas 150 is directed to reaction cavity 140 , and to control the flow of mixed gas 150 into reaction vessel 135 the rate. In this manner, the reaction cavity 140 enables a chemical reaction between the fluorine and the hydroxide 145 of the received mixed gas 150 to form a new gas mixture 155 . The interior of the reaction vessel 135 defining the reaction cavity 140 should be made of non-reactive material so as not to interfere with or alter the chemical reaction between the fluorine and the hydroxide 145 of the received mixed gas 150 . For example, the interior of reaction vessel 135 may be made of non-reactive metal such as stainless steel or Monel metal.

水感測器115流體地連接以接收新氣體混合物155且感測新氣體混合物155內之水之量。水感測器115可為能夠偵測在歸因於化學反應而預期之濃度範圍內之水之濃度的市售水感測器。舉例而言,水感測器115感測新氣體混合物155內之在200至1000 ppm範圍內之水。Water sensor 115 is fluidly connected to receive new gas mixture 155 and sense the amount of water within new gas mixture 155 . Water sensor 115 may be a commercially available water sensor capable of detecting a concentration of water within a range of expected concentrations due to chemical reactions. For example, water sensor 115 senses water in the new gas mixture 155 in the range of 200 to 1000 ppm.

水感測器115 (且視情況,氧氣感測器117)可在量測容器170之量測空腔175內部。量測空腔175經由套管177流體地連接至反應空腔140。儘管圖1中未展示,但一或多個流體控制裝置(諸如閥)可置放於套管177中以控制新氣體混合物155何時引導至量測空腔175之時序,以及控制新氣體混合物155流動至量測容器170中之速率。The water sensor 115 (and optionally the oxygen sensor 117 ) may be inside the measurement cavity 175 of the measurement container 170 . Measuring cavity 175 is fluidly connected to reaction cavity 140 via cannula 177 . Although not shown in FIG. 1 , one or more fluid control devices (such as valves) may be placed in cannula 177 to control the timing of when new gas mixture 155 is directed to measurement cavity 175 , as well as to control the timing of new gas mixture 155 The rate of flow into the measurement container 170.

在一些實施中,水感測器115可為濕度計,其量測空腔175中之水蒸氣之量或濕度。量測濕度之工具通常亦量測溫度、壓力、質量或甚至吸收濕氣之物質中之機械或電氣變化,此係由於彼等因素亦可影響濕度。藉由校準及計算,此等經量測之量可引起濕度之量測。濕度計可為使用冷凝溫度(亦稱為露點)、物質之完全蒸氣飽和點的電子裝置。濕度計可為偵測及量測物質之電容或電阻之變化以判定濕度之裝置。濕度計可為量測物質保持靜電荷之能力之變化的電阻性濕度計。濕度計可為量測物質傳輸電之能力之變化的基於電容器之濕度計。In some implementations, water sensor 115 may be a hygrometer that measures the amount of water vapor or humidity in cavity 175 . Tools that measure humidity often also measure mechanical or electrical changes in temperature, pressure, mass, or even substances that absorb moisture, since these factors can also affect humidity. Through calibration and calculation, these measured quantities can lead to measurements of humidity. A hygrometer can be an electronic device that uses the condensation temperature (also called the dew point), the point of complete vapor saturation of a substance. A hygrometer is a device that detects and measures changes in the capacitance or resistance of a substance to determine humidity. A hygrometer may be a resistive hygrometer that measures changes in a substance's ability to hold an electrostatic charge. A hygrometer may be a capacitor-based hygrometer that measures changes in a substance's ability to transmit electricity.

在一些實施中,儘管未要求,但感測設備116包括第二感測器117,其可為感測新氣體混合物155內之在百萬分之(ppm) 200至1000範圍內之氧氣的氧氣感測器117。In some implementations, although not required, the sensing device 116 includes a second sensor 117 , which may be for sensing oxygen in the new gas mixture 155 in the range of 200 to 1000 parts per million (ppm). Sensor 117.

合適於此濃度範圍之氧氣感測器117之一個實例為氧氣分析儀,其利用精密二氧化鋯感測器以偵測氧氣。二氧化鋯感測器包括由高純度、高密度、穩定的氧化鋯陶瓷製成之單元。二氧化鋯感測器產生指示新氣體混合物155之氧氣濃度之電壓信號。此外,二氧化鋯感測器之輸出由氧氣感測器117內之高速微處理器分析(例如轉換及線性化)以提供直接數位讀出以供控制器130使用。習知二氧化鋯單元包括在其內表面及外表面上電鍍有多孔鉑電極之二氧化鋯陶瓷管。當二氧化鋯感測器經加熱至高於特定溫度(例如600 C或1112°F)時,其變成氧離子傳導電解質。電極為氧分子O 2至氧離子及氧離子至氧分子之變化提供催化表面。單元之高濃度參考氣體側上之氧分子獲得電子以變成進入電解質之離子。同時,在內電極處,氧離子失去電子且作為氧分子自表面釋放。當二氧化鋯感測器之每一側上之氧氣濃度不同時,氧離子自高濃度側遷移至低濃度側。此離子流產生電子不平衡,導致跨電極之DC電壓。此電壓為感測器溫度及感測器之每一側上之氧氣分壓(濃度)之比率的函數。此電壓隨後由氧氣感測器117內之高速微處理器分析以由控制器130直接讀出。 An example of an oxygen sensor 117 suitable for this concentration range is an oxygen analyzer, which utilizes a precision zirconium dioxide sensor to detect oxygen. Zirconia sensors include units made of high-purity, high-density, stable zirconia ceramics. The zirconium dioxide sensor generates a voltage signal indicative of the oxygen concentration of the new gas mixture 155 . Additionally, the output of the zirconium dioxide sensor is analyzed (eg, converted and linearized) by a high-speed microprocessor within oxygen sensor 117 to provide a direct digital readout for use by controller 130 . A conventional zirconium dioxide unit includes a zirconium dioxide ceramic tube with porous platinum electrodes electroplated on its inner and outer surfaces. When a zirconium dioxide sensor is heated above a certain temperature (such as 600 C or 1112°F), it becomes an oxygen ion conducting electrolyte. The electrode provides a catalytic surface for the change of oxygen molecules O2 to oxygen ions and oxygen ions to oxygen molecules. Oxygen molecules on the high-concentration reference gas side of the cell gain electrons to become ions that enter the electrolyte. At the same time, at the inner electrode, the oxygen ions lose their electrons and are released from the surface as oxygen molecules. When the oxygen concentration on each side of the zirconium dioxide sensor is different, oxygen ions migrate from the high concentration side to the low concentration side. This ion flow creates an electron imbalance, resulting in a DC voltage across the electrodes. This voltage is a function of the sensor temperature and the ratio of the oxygen partial pressure (concentration) on each side of the sensor. This voltage is then analyzed by a high-speed microprocessor within the oxygen sensor 117 to be read directly by the controller 130 .

由於氟與氫氧化物之間的化學反應為易於實施及控制的化學計量上簡單之化學反應而使混合氣體150中之氟與氫氧化物145反應。此外,化學反應之經控制化學計量比率為固定的。另外,氟與氫氧化物之間的化學反應為穩定的化學反應。若化學反應並未逆轉且新氣體混合物之組分並不與新氣體混合物中之任何其他物反應以形成氟,則化學反應可為穩定的。接下來論述穩定且具有經控制化學計量比率的混合氣體150中之氟與氫氧化物145之間的一個合適的化學反應。Since the chemical reaction between fluorine and hydroxide is a stoichiometrically simple chemical reaction that is easy to implement and control, the fluorine in the mixed gas 150 reacts with the hydroxide 145 . Furthermore, the controlled stoichiometric ratios of chemical reactions are fixed. In addition, the chemical reaction between fluorine and hydroxide is a stable chemical reaction. A chemical reaction may be stable if it is not reversed and the components of the new gas mixture do not react with anything else in the new gas mixture to form fluorine. Next, a suitable chemical reaction between fluorine and hydroxide 145 in a stable and controlled stoichiometric gas mixture 150 is discussed.

在一些實施中,氫氧化物145呈顆粒、固體、粉末形式。此外,呈顆粒形式之氫氧化物145可緊密封裝至反應容器135 (其可為管)中,使得氫氧化物145之粉末中之粒子不存在移動。氫氧化物145之粉末外部及反應容器135內之空間中之區域或體積視為孔,且藉由使用呈顆粒形式之氫氧化物145,有可能確保存在較大表面積以允許氫氧化物145與氟之間的充分化學反應。在一些實施中,且取決於特定氫氧化物,將氫氧化物145及反應容器135維持在室溫下,且氫氧化物145與氟之間的反應繼續進行而不需催化劑。In some implementations, hydroxide 145 is in particulate, solid, or powder form. Additionally, hydroxide 145 in particulate form can be tightly packed into reaction vessel 135 (which can be a tube) such that there is no movement of the particles in the powder of hydroxide 145 . The areas or volumes outside the powder of hydroxide 145 and in the space within reaction vessel 135 are considered pores, and by using hydroxide 145 in particulate form, it is possible to ensure that a larger surface area is present to allow hydroxide 145 to interact with Full chemical reaction between fluorine. In some implementations, and depending on the particular hydroxide, hydroxide 145 and reaction vessel 135 are maintained at room temperature, and the reaction between hydroxide 145 and fluorine proceeds without the need for a catalyst.

氫氧化物145可填充反應容器135內之反應空腔140。反應容器135之形狀(且因此反應空腔140)不限於特定形式。Hydroxide 145 may fill reaction cavity 140 within reaction vessel 135. The shape of reaction vessel 135 (and thus reaction cavity 140) is not limited to a particular form.

氫氧化物145包括金屬Σ,其可為鹼土金屬。此外,氫氧化物145缺少鹼金屬及碳。因此,氫氧化物145可為氫氧化鈣[Ca(OH) 2] (在此實例中,Σ為Ca)。氫氧化鈣呈顆粒及固體形式且具有足夠的孔以提供足夠表面積以允許與氟氣體之化學反應。氫氧化鈣之粒子之間的空間足夠大以准許氟氣體流動至氫氧化鈣中以實現化學反應。舉例而言,氫氧化鈣可呈顆粒形式,該顆粒封裝成一行且封裝之水平取決於待分析之混合氣體150中之氟濃度之水平。使混合氣體150傳遞(例如,流動)通過或跨越氫氧化物145以實現氟與氫氧化鈣之間的化學反應。 Hydroxide 145 includes metal Σ, which may be an alkaline earth metal. In addition, hydroxide 145 lacks alkali metals and carbon. Thus, hydroxide 145 may be calcium hydroxide [Ca(OH) 2 ] (in this example, Σ is Ca). Calcium hydroxide is in particulate and solid form and is sufficiently porous to provide sufficient surface area to allow chemical reaction with fluorine gas. The spaces between the particles of calcium hydroxide are large enough to allow fluorine gas to flow into the calcium hydroxide to achieve chemical reactions. For example, the calcium hydroxide may be in the form of particles that are packed into a row and the level of packing depends on the level of fluorine concentration in the gas mixture 150 to be analyzed. Mixed gas 150 is passed (eg, flowed) through or across hydroxide 145 to effect a chemical reaction between fluorine and calcium hydroxide.

在混合氣體150內存在氟氣體(F 2)之情況下,若氫氧化物為氟化鈣Ca(OH) 2,則發生以下兩步驟化學反應: 1) 2F 2+ Ca(OH) 2= CaF 2+ OF 2+ H 2O; 2) OF 2+ Ca(OH) 2= CaF 2+ O 2+ H 2O。 對於與氫氧化鈣[Ca(OH) 2] 145之分子相互作用之氟(F 2)之每兩個分子,輸出無機氟化物化合物(氟化鈣或CaF 2)之兩個分子、氧氣(O 2)之一個分子及水(H 2O)之兩個分子。此化學反應為線性且化學計量上簡單之反應。因此,為了僅聚焦於氟及水,對於輸入至化學反應中之氟F 2之每一個分子,自化學反應輸出水H 2O之一個分子。寫此之另一方式為,對於輸入至化學反應中之每一個莫耳(mole)之氟F 2,自化學反應輸出一個莫耳之H 2O。因此,若將2莫耳之氟F 2輸入至化學反應中,則在化學反應之後釋放2莫耳之水H 2O。此水藉由水感測器115偵測到。因此,舉例而言,由於控制器130 (自所儲存記憶體中存取資料)已知在此化學反應中之氟與水的比率為1:1,故若藉由感測器115偵測到0.6莫耳之水,則控制器130判定氣體混合物107中存在0.6莫耳之氟。在其他實施中,偵測設備105可假定完成氟之轉化(且因此,在化學反應之後氣體中並不存在殘餘分子氟F 2)。舉例而言,若在開始化學反應之後已過去足夠時間,則此假定可為有效假定。 In the case where fluorine gas (F 2 ) exists in the mixed gas 150, if the hydroxide is calcium fluoride Ca(OH) 2 , the following two-step chemical reaction occurs: 1) 2F 2 + Ca(OH) 2 = CaF 2 + OF 2 + H 2 O; 2) OF 2 + Ca(OH) 2 = CaF 2 + O 2 + H 2 O. For every two molecules of fluorine (F 2 ) interacting with molecules of calcium hydroxide [Ca(OH) 2 ] 145, output two molecules of the inorganic fluoride compound (calcium fluoride or CaF 2 ), oxygen (O One molecule of 2 ) and two molecules of water (H 2 O). This chemical reaction is a linear and stoichiometrically simple reaction. Therefore, to focus only on fluorine and water, for every molecule of fluorine F2 input into the chemical reaction, one molecule of water H2O is output from the chemical reaction. Another way of writing this is that for every mole of fluorine F2 input into the chemical reaction, one mole of H2O is output from the chemical reaction. Therefore, if 2 moles of fluorine F2 are input into a chemical reaction, 2 moles of water H2O are released after the chemical reaction. This water is detected by water sensor 115. Therefore, for example, since the controller 130 (accessing data from the stored memory) knows that the ratio of fluorine to water in this chemical reaction is 1:1, if the sensor 115 detects 0.6 moles of water, the controller 130 determines that there are 0.6 moles of fluorine in the gas mixture 107 . In other implementations, the detection device 105 may assume that the conversion of fluorine is complete (and therefore, no residual molecular fluorine F2 is present in the gas after the chemical reaction). For example, this assumption may be valid if sufficient time has elapsed since the chemical reaction was initiated.

在此實例中,若感測設備116亦包括氧氣感測器117,則來自氧氣感測器117之氧氣之濃度之量測可與來自水感測器115之水之量測結合使用。因此,若將4莫耳之氟F 2輸入至化學反應中,則在化學反應之後釋放2莫耳之氧氣O 2。此氧氣藉由氧氣感測器117偵測到。作為實例,由於控制器130已知在此化學反應中之氟與氧氣的比率為2:1,故若藉由感測器117偵測到0.3莫耳之氧氣,則控制器判定氣體混合物107中存在0.6莫耳之氟。控制器130可使用來自氧氣感測器117及水感測器115兩者之資料來估計存在於氣體混合物107中之氟之濃度(此係由於氧氣、水及氟之重量或質量為已知的)。舉例而言,可使用兩個資料集進行氟之更準確判定。額外校準及校正亦可藉由控制器來使用(例如以考慮氟、氧氣或水之消耗或低效偵測),如由熟習此項技術者將理解的。 In this example, if the sensing device 116 also includes an oxygen sensor 117 , the measurement of the concentration of oxygen from the oxygen sensor 117 may be used in conjunction with the measurement of water from the water sensor 115 . Therefore, if 4 moles of fluorine F 2 are input into a chemical reaction, 2 moles of oxygen O 2 are released after the chemical reaction. This oxygen is detected by oxygen sensor 117. As an example, since the controller 130 knows that the ratio of fluorine to oxygen in this chemical reaction is 2:1, if 0.3 moles of oxygen are detected by the sensor 117, the controller determines that the gas mixture 107 contains 0.6 moles of fluorine are present. Controller 130 may use data from both oxygen sensor 117 and water sensor 115 to estimate the concentration of fluorine present in gas mixture 107 (since the weights or masses of oxygen, water, and fluorine are known ). For example, two data sets can be used to make a more accurate determination of fluorine. Additional calibrations and corrections may also be used by the controller (eg to account for fluorine, oxygen or water consumption or inefficient detection), as will be understood by those skilled in the art.

在一些實施中,氫氧化物145與混合氣體150中之氟之間的反應在一或多個特定設計的條件下發生。舉例而言,氫氧化物145與混合氣體150中之氟之間的反應可在存在一或多種催化劑下發生,該一或多種催化劑為改變化學反應之速率但在結束化學反應時在化學上不改變之物質。作為另一實例,氫氧化物145與混合氣體150中之氟之間的反應可在諸如溫度受控環境或濕度受控環境之受控環境下發生。In some implementations, the reaction between the hydroxide 145 and the fluorine in the gas mixture 150 occurs under one or more specifically designed conditions. For example, the reaction between the hydroxide 145 and the fluorine in the mixed gas 150 may occur in the presence of one or more catalysts that alter the rate of the chemical reaction but are chemically inert at the end of the chemical reaction. The substance of change. As another example, the reaction between the hydroxide 145 and the fluorine in the mixed gas 150 may occur in a controlled environment such as a temperature-controlled environment or a humidity-controlled environment.

參考圖2,設備100可例如在紫外線(UV)或深紫外線(DUV)光源200內實施,該光源200產生引導至光微影設備222以用於使晶圓上之微電子特徵圖案化之光束211。光源200包括連接至光源200之各種元件以實現光束211之產生之控制系統290。儘管控制系統290展示為單塊,但其可由複數個子組件製成,該等子組件中之任何一或多者可自其他子組件移除或在光源200內之元件本端。此外,控制器130可視為控制系統290之一部分或設備100之一部分。Referring to FIG. 2 , the apparatus 100 may be implemented, for example, within an ultraviolet (UV) or deep ultraviolet (DUV) light source 200 that generates a beam of light directed to a photolithography apparatus 222 for patterning microelectronic features on a wafer. 211. The light source 200 includes a control system 290 connected to various components of the light source 200 to achieve generation of the light beam 211. Although control system 290 is shown as a single piece, it may be made from a plurality of sub-assemblies, any one or more of which may be removable from other sub-assemblies or local components within light source 200 . Additionally, controller 130 may be considered part of control system 290 or part of device 100 .

在此實施中,設備100經組態以計算產生光源200之光束211的準分子氣體放電系統225之氣體放電腔室210中之一或多者內之氟之濃度。儘管僅展示一個氣體放電腔室210,但準分子氣體放電系統225可包括複數個氣體放電腔室210,其中之任何一或多者與設備100之偵測設備105以及其他元件(諸如光學元件、度量衡裝置及機電元件)流體連通以用於控制光束211之態樣,此類其他元件未在圖2中展示。此外,圖2中僅展示與設備100相關之光源200之組件。舉例而言,光源200可包括置放於最後一個氣體放電腔室210之輸出處之光束製備系統以調整引導至光微影設備222之光束211之一或多個性質。In this implementation, the apparatus 100 is configured to calculate the concentration of fluorine within one or more of the gas discharge chambers 210 of the excimer gas discharge system 225 that generates the beam 211 of the light source 200 . Although only one gas discharge chamber 210 is shown, the excimer gas discharge system 225 may include a plurality of gas discharge chambers 210 , any one or more of which are associated with the detection device 105 of the device 100 and other components such as optical components, Metrology devices and electromechanical components) are in fluid communication for controlling the light beam 211, such other components are not shown in Figure 2. Furthermore, only components of the light source 200 associated with the device 100 are shown in FIG. 2 . For example, the light source 200 may include a beam preparation system placed at the output of the last gas discharge chamber 210 to adjust one or more properties of the beam 211 directed to the photolithography apparatus 222 .

氣體放電腔室210容納能量源230且含有氣體混合物207。能量源230將能量之來源提供至氣體混合物207;特定而言,能量源230將足夠能量提供至氣體混合物207以致使粒子數反轉,從而經由腔室210內之受激發射實現增益。在一些實例中,能量源230為藉由置放於氣體放電腔室210內之一對電極提供之放電。在其他實例中,能量源230為光學泵浦源。Gas discharge chamber 210 houses an energy source 230 and contains a gas mixture 207 . Energy source 230 provides a source of energy to gas mixture 207; specifically, energy source 230 provides sufficient energy to gas mixture 207 to cause population inversion, thereby achieving gain via stimulated emission within chamber 210. In some examples, energy source 230 is a discharge provided by a counter electrode placed within gas discharge chamber 210 . In other examples, energy source 230 is an optical pump source.

氣體混合物207包括增益介質,其包括稀有氣體及鹵素,諸如氟。在DUV光源200之操作期間,消耗氣體放電腔室210內之氣體混合物207 (其為光放大提供增益介質)之氟,且隨著時間推移,此減少光放大之量且因此改變由光源200產生之光束211之特性。相較於在初始氣體再填充程序下設定之氟之濃度,光微影設備222試圖將氣體放電腔室210中之氣體混合物207內之氟之濃度維持在某一容限內。由此,按常規步調且在氣體維持系統120之控制下,將額外氟添加至氣體放電腔室210。氟消耗量在氣體放電腔室之間有所不同,故封閉迴路控制用以判定在每一機會下推動或注入至氣體放電腔室210中之氟之量。設備100用以判定氣體放電腔室210中剩餘之氟之濃度,且因此用於判定推動或注入至氣體放電腔室210中之氟之量的總體方案中。Gas mixture 207 includes gain media including noble gases and halogens, such as fluorine. During operation of the DUV light source 200 , fluorine is consumed in the gas mixture 207 within the gas discharge chamber 210 (which provides the gain medium for light amplification), and over time this reduces the amount of light amplification and therefore changes produced by the light source 200 Characteristics of the beam 211. The photolithography apparatus 222 attempts to maintain the fluorine concentration in the gas mixture 207 in the gas discharge chamber 210 within a certain tolerance compared to the fluorine concentration set during the initial gas refill procedure. Thus, additional fluorine is added to the gas discharge chamber 210 at a regular pace and under the control of the gas maintenance system 120 . Fluorine consumption varies between gas discharge chambers, so closed loop control is used to determine the amount of fluorine to push or inject into gas discharge chamber 210 at each opportunity. The apparatus 100 is used in an overall scheme to determine the concentration of fluorine remaining in the gas discharge chamber 210 and therefore the amount of fluorine to be pushed or injected into the gas discharge chamber 210 .

如所提及,氣體混合物207包括增益介質,其包括稀有氣體及氟。氣體混合物207可包括其他氣體,諸如緩衝氣體。該增益介質為氣體混合物207內之雷射主動實體,且增益介質可由單個原子、分子或偽分子構成。因此,粒子數反轉在增益介質中藉由自能量源230抽吸具有放電之氣體混合物207 (且因此增益介質)經由受激發射產生。如上文所提及,增益介質通常包括稀有氣體及鹵素,而緩衝氣體通常包括惰性氣體。稀有氣體包括例如氬氣、氪氣或氙氣。鹵素包括例如氟。惰性氣體包括例如氦氣或氖氣。氣體混合物207內除氟之外的氣體為惰性的(稀薄氣體或稀有氣體),且由此,假定在混合氣體150與氫氧化物145之間進行之唯一化學反應為混合氣體150中之氟與氫氧化物145之間的反應。As mentioned, gas mixture 207 includes a gain medium including noble gases and fluorine. Gas mixture 207 may include other gases, such as buffer gases. The gain medium is a laser active entity within the gas mixture 207, and the gain medium can be composed of single atoms, molecules or pseudo-molecules. Thus, population inversion is produced in the gain medium by pumping the gas mixture 207 (and therefore the gain medium) with a discharge from the energy source 230 via stimulated emission. As mentioned above, the gain medium usually includes rare gases and halogens, and the buffer gas usually includes inert gases. Rare gases include, for example, argon, krypton or xenon. Halogen includes, for example, fluorine. Inert gases include, for example, helium or neon. The gases other than fluorine in the gas mixture 207 are inert (rare gases or noble gases), and therefore, it is assumed that the only chemical reaction occurring between the mixed gas 150 and the hydroxide 145 is the fluorine in the mixed gas 150 and the hydroxide 145 . Reactions between hydroxides 145.

再次參考圖1,氣體維持系統120為用於調整特性(諸如氣體混合物107或207內之組分之相對濃度或壓力)之氣體管理系統。Referring again to FIG. 1 , gas maintenance system 120 is a gas management system for adjusting characteristics such as the relative concentration or pressure of components within gas mixture 107 or 207 .

參考圖3,在感測設備包括與水感測器115結合使用以判定或估計氣體混合物107中之氟之濃度之氧氣感測器117的一些實施中,設備為設備300且偵測設備105為包括氟感測器360之偵測設備305,該氟感測器360流體地連接至反應空腔140且經組態以判定新氣體混合物155中之氟之濃度何時降至低於下限值。氟感測器360可為在高於氟之濃度下飽和之市售氟感測器,該氟之濃度太低而無法用於混合氣體150中之氟之直接量測。然而,氟感測器360具有最小偵測臨限值且可用以由此偵測新氣體混合物155中之氟之濃度何時降至低於下限值。舉例而言,氟感測器360可在10 ppm濃度下飽和,但其可具有約0.05 ppm之最小偵測臨限值,且可在新氣體混合物155中之氟之濃度降至低於0.1 ppm之後開始偵測新氣體混合物155中之氟。Referring to Figure 3, in some implementations in which the sensing device includes an oxygen sensor 117 used in conjunction with a water sensor 115 to determine or estimate the concentration of fluorine in the gas mixture 107, the device is device 300 and the detection device 105 is A detection device 305 includes a fluorine sensor 360 fluidly connected to the reaction cavity 140 and configured to determine when the concentration of fluorine in the new gas mixture 155 falls below a lower limit value. The fluorine sensor 360 may be a commercially available fluorine sensor that saturates at a concentration higher than fluorine, which is too low for direct measurement of fluorine in the mixed gas 150 . However, the fluorine sensor 360 has a minimum detection threshold and can be used to thereby detect when the concentration of fluorine in the new gas mixture 155 drops below the lower limit. For example, the fluorine sensor 360 may saturate at a concentration of 10 ppm, but may have a minimum detection threshold of approximately 0.05 ppm and may reduce the fluorine concentration in the new gas mixture 155 to less than 0.1 ppm. Then detection of fluorine in the new gas mixture 155 begins.

控制器130經組態為自氟感測器360接收輸出之控制器330。控制器330包括沿將新氣體混合物155輸送至氧氣感測器117之線路與流動控制裝置365相互作用之模組。流動控制裝置365可為諸如閘閥或其他流體控制閥之裝置。Controller 130 is configured to receive output from fluorine sensor 360 . Controller 330 includes modules that interact with flow control device 365 along the line that delivers new gas mixture 155 to oxygen sensor 117 . Flow control device 365 may be a device such as a gate valve or other fluid control valve.

控制器330將信號發送至流動控制裝置365以僅在自氟感測器360之輸出判定新氣體混合物155中之氟之濃度降至低於下限值(例如,0.1 ppm)時才使得新氣體混合物155能夠流動至氧氣感測器117。以此方式,若氟之濃度降至低於下限值,則氧氣感測器117僅暴露於新氣體混合物155,由此保護氧氣感測器117以免氟水平不可接受。下限值可為基於氧氣感測器117之損壞臨限值而判定之值。因此,在高於下限值之氟之濃度下,可能對氧氣感測器117造成損壞。下限值可為基於氧氣感測器117之誤差臨限值而判定之值。因此,在高於下限值之氟之濃度下,量測誤差可影響氧氣感測器117之準確度。Controller 330 sends a signal to flow control device 365 to enable fresh gas only when the concentration of fluorine in fresh gas mixture 155 is determined to have fallen below a lower limit value (eg, 0.1 ppm) from the output of fluorine sensor 360 Mixture 155 can flow to oxygen sensor 117 . In this manner, oxygen sensor 117 is only exposed to new gas mixture 155 if the fluorine concentration drops below the lower limit, thereby protecting oxygen sensor 117 from unacceptable fluorine levels. The lower limit value may be a value determined based on the damage threshold of the oxygen sensor 117 . Therefore, at a fluorine concentration higher than the lower limit value, the oxygen sensor 117 may be damaged. The lower limit value may be a value determined based on the error threshold of the oxygen sensor 117 . Therefore, at a fluorine concentration higher than the lower limit, the measurement error may affect the accuracy of the oxygen sensor 117 .

偵測設備305亦包括流體地連接至反應容器135之反應空腔140之量測容器370。量測容器370界定經組態以接收新氣體混合物155之量測空腔375。此外,水感測器115及氧氣感測器117容納於量測空腔375內。量測容器370為含有新氣體混合物155以使得水感測器115能夠感測新氣體混合物155中之水之濃度且使得氧氣感測器115能夠感測新氣體混合物155中之氧氣之濃度的任何容器。界定量測空腔375之量測容器370之內部應由非反應性材料製成以免改變新氣體混合物155之組成。舉例而言,量測容器370之內部可由非反應性金屬製成。The detection device 305 also includes a measurement vessel 370 fluidly connected to the reaction cavity 140 of the reaction vessel 135 . Measuring vessel 370 defines a measuring cavity 375 configured to receive new gas mixture 155 . In addition, the water sensor 115 and the oxygen sensor 117 are accommodated in the measurement cavity 375 . The measurement container 370 is any container that contains the new gas mixture 155 such that the water sensor 115 can sense the concentration of water in the new gas mixture 155 and the oxygen sensor 115 can sense the concentration of oxygen in the new gas mixture 155 . container. The interior of the measuring vessel 370 defining the measuring cavity 375 should be made of non-reactive material so as not to change the composition of the new gas mixture 155 . For example, the interior of measurement container 370 may be made of non-reactive metal.

參考圖4,在一些實施中,設備100經設計為設備400且偵測設備105經設計為偵測設備405,該偵測設備405包括緩衝容器470,該緩衝容器470自反應容器135所需之流速解耦來自腔室110之排氣之流速。以此方式,緩衝容器470經由偵測設備405實現氟量測,而不影響由氣體維持系統120進行之氣體交換之穩態操作。Referring to FIG. 4 , in some implementations, device 100 is designed as device 400 and detection device 105 is designed as detection device 405 , which includes a buffer vessel 470 from the reaction vessel 135 required. The flow rate decouples the flow rate of the exhaust gas from chamber 110 . In this manner, the buffer vessel 470 achieves fluorine measurement via the detection device 405 without affecting the steady-state operation of gas exchange by the gas maintenance system 120 .

在一個實例中,腔室110內氟之濃度為約1000 ppm,腔室110之體積為36公升(L),且腔室110內之壓力為200至400千帕斯卡(kPa)。緩衝容器470之內部空腔具有約0.1 L之體積及200至400 kPa之壓力。量測空腔175具有0.1 L之體積、約200至400 kPa之壓力、1000 ppm之水濃度及約500 ppm之氧氣濃度。在水感測器115進行水濃度之量測(且視情況,氧氣感測器117進行氧濃度之量測)且將資料輸出至控制器130之後,隨後量測空腔175可以受控方式清空。In one example, the concentration of fluorine in the chamber 110 is about 1000 ppm, the volume of the chamber 110 is 36 liters (L), and the pressure in the chamber 110 is 200 to 400 kPa. The internal cavity of the buffer container 470 has a volume of approximately 0.1 L and a pressure of 200 to 400 kPa. The measurement cavity 175 has a volume of 0.1 L, a pressure of approximately 200 to 400 kPa, a water concentration of 1000 ppm, and an oxygen concentration of approximately 500 ppm. After the water sensor 115 measures the water concentration (and optionally the oxygen sensor 117 measures the oxygen concentration) and outputs the data to the controller 130 , the measurement cavity 175 may then be emptied in a controlled manner. .

如上文參考圖1所提及,設備100經組態以量測或估計腔室110中之氣體混合物107中之氟之濃度。在一些實施中,如圖5中所展示,設備100經設計為設備500且偵測設備105經設計為偵測設備505,該偵測設備505經組態以量測或估計各別腔室510_1、510_2…510_i中之氣體混合物507_1、507_2…507_i中之氟之濃度,其中i為大於1之整數。在偵測設備505中,存在與各別腔室510_1、510_2…510_i相關聯之獨立或專用感測設備516_1、516_2…516_i。以此方式,每一感測設備516_1、516_2…516_i可用以量測各別腔室510_1、510_2…510_i中之氟濃度。As mentioned above with reference to FIG. 1 , the apparatus 100 is configured to measure or estimate the concentration of fluorine in the gas mixture 107 in the chamber 110 . In some implementations, as shown in Figure 5, device 100 is designed as device 500 and detection device 105 is designed as detection device 505 configured to measure or estimate respective chambers 510_1 , the concentration of fluorine in the gas mixture 507_1, 507_2...507_i in 510_2...510_i, where i is an integer greater than 1. Within the detection device 505, there are independent or dedicated sensing devices 516_1, 516_2...516_i associated with the respective chambers 510_1, 510_2...510_i. In this manner, each sensing device 516_1, 516_2...516_i can be used to measure the fluorine concentration in the respective chamber 510_1, 510_2...510_i.

偵測設備505連接至氣體維持系統520,該氣體維持系統520包括經由各別套管系統527_1、527_3…527_i流體地連接至每一腔室510_1、510_2…510_i之氣體供應系統,該各別套管系統527_1、527_3…527_i為主套管系統527之一部分。氣體維持系統520包括一或多個氣體供應器及控制單元以用於控制來自供應器之氣體中之哪些查看主套管系統527轉移進入及離開各別腔室510_1、510_2…510_i。偵測設備505包括經由各別套管537_1、537_2…537_i自各別腔室510_1、510_2…510_i接收混合氣體550_1、550_2…550_i (其包括氟)之各別反應容器535_1、535_2…535_i。隨後將由在各別反應容器535_1、535_2…535_i中接收到之混合氣體550_1、550_2…550_i之氟與氫氧化物545_1、545_2…545_i之間的化學反應形成之新氣體混合物555_1、555_2…555_i引導至各別感測設備516_1、516_2…516_i。The detection device 505 is connected to a gas maintenance system 520 that includes a gas supply system fluidly connected to each chamber 510_1, 510_2...510_i via a respective sleeve system 527_1, 527_3...527_i, the respective sleeve Pipe systems 527_1, 527_3...527_i are part of the main casing system 527. The gas maintenance system 520 includes one or more gas suppliers and a control unit for controlling which of the gases from the suppliers the view main casing system 527 transfers into and out of the respective chambers 510_1, 510_2...510_i. The detection device 505 includes respective reaction vessels 535_1, 535_2...535_i that receive mixed gases 550_1, 550_2...550_i (including fluorine) from respective chambers 510_1, 510_2...510_i via respective sleeves 537_1, 537_2...537_i. New gas mixtures 555_1, 555_2...555_i are then conducted from the chemical reaction between the fluorine and hydroxides 545_1, 545_2...545_i of the mixed gases 550_1, 550_2...550_i received in the respective reaction vessels 535_1, 535_2...535_i. to respective sensing devices 516_1, 516_2...516_i.

偵測設備505亦包括連接至氣體維持系統520且連接至感測設備516_1、516_2…516_i中之每一者的控制器530。如控制器530,控制器530自感測設備516_1、516_2…516_i接收輸出且計算或估計在反應容器535_1、535_2…535_i中開始化學反應之前存在多少氟以估計各別氣體混合物507_1、507_2…507_i中之氟之量。Detection device 505 also includes a controller 530 connected to gas maintenance system 520 and to each of sensing devices 516_1, 516_2...516_i. Like controller 530, controller 530 receives output from sensing devices 516_1, 516_2...516_i and calculates or estimates how much fluorine is present before starting a chemical reaction in reaction vessels 535_1, 535_2...535_i to estimate respective gas mixtures 507_1, 507_2...507_i The amount of fluorine in it.

在其他實施中,有可能使用量測所有腔室510_1、510_2…510_i中之氟之單個感測設備516,只要偵測設備505包括腔室510_1、510_2…510_i與偵測設備505之間的合適的管道以防止針對腔室510_1、510_2…510_i中之每一者藉由感測設備516進行之量測之間存在串音。此外,若一次僅對一個腔室510進行氣體交換,則單個感測設備516設計可起作用,且因此控制器530可在任一時刻量測單個腔室510中之氟。In other implementations, it is possible to use a single sensing device 516 that measures fluorine in all chambers 510_1, 510_2...510_i, as long as the detection device 505 includes appropriate coordination between the chambers 510_1, 510_2...510_i and the detection device 505 ducting to prevent crosstalk between measurements made by sensing device 516 for each of chambers 510_1, 510_2...510_i. Additionally, if only one chamber 510 is gas exchanged at a time, a single sensing device 516 design may function, and thus the controller 530 may measure fluorine in a single chamber 510 at any one time.

參考圖6,展示併有諸如偵測設備105之偵測設備605及諸如圖1、3、4或5之控制器130之控制器630之例示性DUV光源600。DUV光源600包括為雙載物台脈衝輸出設計之準分子氣體放電系統625。氣體放電系統625具有兩個載物台:第一載物台601,其為輸出脈衝經放大光束606之主控振盪器(MO);及第二載物台602,其為自第一載物台601接收光束606之功率放大器(PA)。第一載物台601包括MO氣體放電腔室610_1且第二載物台602包括PA氣體放電腔室610_2。MO氣體放電腔室610_1包括作為其能量源之兩個細長電極630_1。電極630_1將能量之來源提供至腔室610_1內之氣體混合物607_1。PA氣體放電腔室610_2包括作為其能量源之兩個細長電極630_2,該等兩個細長電極630_2將能量之來源提供至腔室610_2內之氣體混合物607_2。Referring to FIG. 6 , an exemplary DUV light source 600 is shown with a detection device 605 such as detection device 105 and a controller 630 such as controller 130 of FIGS. 1 , 3 , 4 or 5 . The DUV light source 600 includes an excimer gas discharge system 625 designed for dual stage pulse output. The gas discharge system 625 has two stages: a first stage 601, which is a master oscillator (MO) that outputs a pulsed amplified beam 606; and a second stage 602, which is an amplified beam from the first stage. Station 601 receives the power amplifier (PA) of beam 606. The first stage 601 includes an MO gas discharge chamber 610_1 and the second stage 602 includes a PA gas discharge chamber 610_2. The MO gas discharge chamber 610_1 includes two elongated electrodes 630_1 as its energy source. Electrode 630_1 provides a source of energy to gas mixture 607_1 within chamber 610_1. The PA gas discharge chamber 610_2 includes two elongated electrodes 630_2 as its energy source. The two elongated electrodes 630_2 provide the source of energy to the gas mixture 607_2 in the chamber 610_2.

MO 601將光束606 (其可稱作種子光束)提供至PA 602。MO氣體放電腔室610_1容納包括其中發生放大之增益介質之氣體混合物607_1,且MO 601亦包括光學回饋機構,諸如形成於MO氣體放電腔室610_1之一側上之光譜特徵選擇系統680與MO氣體放電腔室610_1之第二側上之輸出耦合器681之間的光學諧振器。MO 601 provides beam 606, which may be referred to as a seed beam, to PA 602. MO gas discharge chamber 610_1 houses a gas mixture 607_1 including a gain medium in which amplification occurs, and MO 601 also includes optical feedback mechanisms, such as a spectral feature selection system 680 formed on one side of MO gas discharge chamber 610_1 and the MO gas The optical resonator between the output coupler 681 on the second side of the discharge chamber 610_1.

PA氣體放電腔室610_2容納包括增益介質607_2之氣體混合物607_2,其中在撒佈有來自MO 601之種子光束606時發生放大。若PA 602經設計為再生環諧振器,則將其描述為功率環放大器(PRA),且在此狀況下,可提供來自環設計之足夠光學回饋。PA 602包括返回光束682,其(例如經由反射)使光束返回至PA氣體放電腔室610_2中以形成循環及封閉迴路路徑,其中至環放大器中之輸入在光束耦合設備683處與離開環放大器之輸出相交。PA gas discharge chamber 610_2 contains a gas mixture 607_2 including a gain medium 607_2 in which amplification occurs when seed beam 606 from MO 601 is spread. If the PA 602 is designed as a regenerative ring resonator, it is described as a power ring amplifier (PRA), and in this case can provide sufficient optical feedback from the ring design. PA 602 includes a return beam 682 that returns the beam (eg, via reflection) into the PA gas discharge chamber 610_2 to form a circulating and closed loop path, where input into the loop amplifier is at beam coupling device 683 and exits the loop amplifier. The outputs intersect.

MO 601使得能夠在相對低的輸出脈衝能量(當與PA 602之輸出相比較時)下精密調諧光譜參數,諸如中心波長及頻寬。PA自MO 601接收種子光束606且放大此輸出以獲得對於輸出光束211必需之功率以供用於諸如光微影設備222之輸出設備中。藉由反覆地穿過PA 602來放大種子光束606且藉由MO 601之組態判定種子光束606之光譜特徵。MO 601 enables fine tuning of spectral parameters, such as center wavelength and bandwidth, at relatively low output pulse energies (when compared to the output of PA 602). The PA receives seed beam 606 from MO 601 and amplifies this output to obtain the necessary power for output beam 211 for use in an output device such as photolithography device 222. The seed beam 606 is amplified by repeatedly passing through the PA 602 and the spectral characteristics of the seed beam 606 are determined by the configuration of the MO 601 .

各別氣體放電腔室610_1、610_2中所使用之氣體混合物607_1、607_2可為用於產生約為所需波長及頻寬之經放大光束(諸如種子光束606及輸出光束211)之合適的氣體之組合。舉例而言,氣體混合物607_1、607_2可包括氟化氬(ArF),其發射波長約為193奈米(nm)之光,或氟化氪(KrF),其發射波長約為248 nm之光。The gas mixtures 607_1, 607_2 used in the respective gas discharge chambers 610_1, 610_2 may be those of suitable gases for producing amplified beams of approximately the desired wavelength and bandwidth, such as the seed beam 606 and the output beam 211. combination. For example, gas mixtures 607_1, 607_2 may include argon fluoride (ArF), which emits light at a wavelength of approximately 193 nanometers (nm), or krypton fluoride (KrF), which emits light at a wavelength of approximately 248 nm.

偵測設備605包括氣體維持系統620,其為用於準分子氣體放電系統625且尤其用於氣體放電腔室610_1及610_2之氣體管理系統。氣體維持系統620包括一或多個氣體源651A、651B、651C等(諸如密封氣體瓶或罐)及閥系統652。一或多個氣體源651A、651B、651C等經由閥系統652內之閥之集合連接至MO氣體放電腔室610_1及PA氣體放電腔室610_2。以此方式,可以氣體混合物內之組分之特定相對量將氣體注入至各別氣體放電腔室610_1或610_2中。儘管未展示,但氣體維持系統620亦可包括一或多個其他組件,諸如流量限制器、排氣閥、壓力感測器、量規及測試埠。The detection device 605 includes a gas maintenance system 620, which is a gas management system for the excimer gas discharge system 625 and in particular for the gas discharge chambers 610_1 and 610_2. Gas maintenance system 620 includes one or more gas sources 651A, 651B, 651C, etc. (such as sealed gas bottles or tanks) and valve system 652. One or more gas sources 651A, 651B, 651C, etc. are connected to the MO gas discharge chamber 610_1 and the PA gas discharge chamber 610_2 via a collection of valves within a valve system 652. In this manner, gas may be injected into the respective gas discharge chamber 610_1 or 610_2 in specific relative amounts of the components within the gas mixture. Although not shown, gas maintenance system 620 may also include one or more other components, such as flow restrictors, vent valves, pressure sensors, gauges, and test ports.

氣體放電腔室610_1及610_2中之每一者含有氣體之混合物(氣體混合物607_1、607_2)。作為實例,氣體混合物607_1、607_2含有鹵素,諸如氟,以及其他氣體,諸如氬氣、氖氣,且可能含有呈總計為總壓力之不同分壓之其他氣體。舉例而言,若氣體放電腔室610_1、610_2中所使用之增益介質為氟化氬(ArF),則氣體源651A含有包括鹵素氟、稀有氣體氬氣及一或多種其他稀薄氣體,諸如緩衝氣體(其可為惰性氣體,諸如氖氣)之氣體混合物。氣體源651A內之此種混合物可稱作三合氣體,由於其含有三種類型的氣體。在此實例中,另一氣體源651B可含有包括氬氣及一或多種其他氣體但無氟之氣體混合物。氣體源651B中之此種混合物可稱作雙合氣體,由於其含有兩種類型的氣體。Each of the gas discharge chambers 610_1 and 610_2 contains a mixture of gases (gas mixtures 607_1, 607_2). As an example, gas mixtures 607_1, 607_2 contain halogens, such as fluorine, and other gases, such as argon, neon, and possibly other gases at different partial pressures that add up to the total pressure. For example, if the gain medium used in the gas discharge chambers 610_1 and 610_2 is argon fluoride (ArF), the gas source 651A contains halogen fluorine, rare gas argon and one or more other rare gases, such as buffer gases. (which may be a gas mixture of inert gases such as neon). This mixture within gas source 651A may be referred to as triple gas since it contains three types of gases. In this example, another gas source 651B may contain a gas mixture including argon and one or more other gases but no fluorine. This mixture in gas source 651B may be called a binary gas since it contains two types of gases.

氣體維持系統620可包括閥控制器653,其經組態以將一或多個信號發送至閥系統652以致使閥系統652在氣體更新中將氣體自特定氣體源651A、651B、651C等轉移至該等氣體放電腔室610_1、610_2中。氣體更新可為對氣體放電腔室內之氣體混合物607之再填充,其中至少利用增益介質及緩衝氣體以及氟之混合物替換氣體放電腔室中之現有混合氣體。氣體更新可為注入方案,其中將增益介質及緩衝氣體以及氟之混合物添加至氣體放電腔室中之現有混合氣體。Gas maintenance system 620 may include valve controller 653 configured to send one or more signals to valve system 652 to cause valve system 652 to divert gas from particular gas sources 651A, 651B, 651C, etc., in a gas update. in the gas discharge chambers 610_1 and 610_2. The gas refresh may be a refill of the gas mixture 607 in the gas discharge chamber, wherein at least the existing mixed gas in the gas discharge chamber is replaced with a mixture of gain medium and buffer gas and fluorine. The gas refresh may be an injection scheme in which a mixture of gain medium and buffer gas and fluorine is added to the existing gas mixture in the gas discharge chamber.

替代地或另外,閥控制器653可將一或多個信號至發送閥系統652以致使閥系統652在必要時自放電腔室610_1、610_2放出氣體,且此類所放出氣體可排出至表示為689之氣體傾卸。在一些實施中,所放出氣體替代地饋入至偵測設備605係可能的,如圖7中所展示。Alternatively or in addition, the valve controller 653 may send one or more signals to the valve system 652 to cause the valve system 652 to bleed gas from the discharge chambers 610_1, 610_2 as necessary, and such bleed gas may be vented to the 689 gas dumping. In some implementations, it is possible that the evolved gas is instead fed to detection device 605, as shown in Figure 7.

在DUV光源600之操作期間,消耗氣體放電腔室610_1、610_2內之氬(或氪)氟化物分子(其為光放大提供增益介質)之氟,且隨時間推移,此減小光放大之量且因此減小由光微影設備222用於晶圓處理之光束211之能量。此外,在DUV光源600之操作過程中,污染物可進入氣體放電腔室610_1、610_2。因此,有必要將氣體自氣體源651A、651B、651C等中之一或多者注入至氣體放電腔室610_1、610_2中,以便沖洗污染物或補充失去之氟。During operation of the DUV light source 600, fluorine is consumed from the argon (or krypton) fluoride molecules (which provide the gain medium for light amplification) within the gas discharge chambers 610_1, 610_2, and this reduces the amount of light amplification over time. and thus reducing the energy of the beam 211 used by the photolithography apparatus 222 for wafer processing. In addition, during operation of the DUV light source 600, contaminants may enter the gas discharge chambers 610_1, 610_2. Therefore, it is necessary to inject gas from one or more of the gas sources 651A, 651B, 651C, etc. into the gas discharge chambers 610_1, 610_2 in order to flush contaminants or replenish lost fluorine.

需要複數個氣體源651A、651B、651C等,此係由於氣體源651A中之氟處於通常高於雷射操作所要之分壓的特定分壓下。為了在所要較低分壓下將氟添加至氣體腔室610_1或610_2,氣體源651A中之氣體可經稀釋,且氣體源651B中不含有鹵素之氣體可用於此目的。A plurality of gas sources 651A, 651B, 651C, etc. are required because the fluorine in gas source 651A is at a specific partial pressure that is typically higher than that required for laser operation. In order to add fluorine to gas chamber 610_1 or 610_2 at a desired lower partial pressure, the gas in gas source 651A can be diluted, and a halogen-free gas in gas source 651B can be used for this purpose.

儘管未展示,但閥系統652之閥可包括指派給氣體放電腔室610_1及610_2中之每一者的複數個閥。舉例而言,可使用允許氣體以第一流速進入及離開每一氣體放電腔室610_1、610_2之注入閥。作為另一實例,可使用允許氣體以不同於第一流速(例如,更快)之第二流速進入及離開每一氣體放電腔室610_1、610_2之腔室填充閥。Although not shown, the valves of valve system 652 may include a plurality of valves assigned to each of gas discharge chambers 610_1 and 610_2. For example, an injection valve that allows gas to enter and exit each gas discharge chamber 610_1, 610_2 at a first flow rate may be used. As another example, a chamber filling valve may be used that allows gas to enter and exit each gas discharge chamber 610_1, 610_2 at a second flow rate that is different from the first flow rate (eg, faster).

在對氣體放電腔室610_1或610_2進行再填充方案時,例如藉由清空氣體放電腔室610_1或610_2 (藉由將氣體混合物放出至氣體傾卸689)且接著利用新鮮氣體混合物再填充氣體放電腔室610_1或610_2來替換氣體放電腔室610_1或610_2中之所有氣體。進行再填充從而在氣體放電腔室610_1或610_2中獲得特定壓力及氟之濃度。當對氣體放電腔室610_1或610_2進行注入方案時,在將氣體混合物注入至氣體放電腔室中之前氣體放電腔室並未清空或僅放出少量。在兩種氣體更新中,偵測設備605 (其類似於偵測設備105而設計)可接收放出之氣體混合物中之一些作為混合氣體150以供偵測設備605內之分析,從而判定氣體放電腔室610_1或610_2內氟之濃度以便判定如何執行氣體更新。In a refilling scheme for gas discharge chamber 610_1 or 610_2, for example by clearing gas discharge chamber 610_1 or 610_2 (by venting the gas mixture to gas dump 689) and then refilling the gas discharge chamber with fresh gas mixture Chamber 610_1 or 610_2 to replace all the gas in the gas discharge chamber 610_1 or 610_2. Refilling is performed to obtain a specific pressure and fluorine concentration in the gas discharge chamber 610_1 or 610_2. When the gas discharge chamber 610_1 or 610_2 is subjected to an injection scheme, the gas discharge chamber is not emptied or only emits a small amount before the gas mixture is injected into the gas discharge chamber. In the two-gas update, the detection device 605 (which is designed similarly to the detection device 105) may receive some of the released gas mixture as the mixed gas 150 for analysis in the detection device 605, thereby determining the gas discharge chamber. The concentration of fluorine in chamber 610_1 or 610_2 is used to determine how to perform gas renewal.

閥控制器653與偵測設備605 (且尤其與偵測設備605中之控制器130)介接。另外,閥控制器653可與為控制系統690之一部分的其他控制模組及子組件介接,該控制系統接下來論述。Valve controller 653 interfaces with detection device 605 (and in particular with controller 130 in detection device 605). Additionally, valve controller 653 may interface with other control modules and subcomponents that are part of control system 690, discussed next.

參考圖7,以方塊圖展示為DUV光源(諸如光源200或600)之一部分的控制系統790 (其可為控制系統290或690)。提供關於控制系統790之細節,其係關於本文中所描述之偵測設備105/605及關於氣體控制及氟濃度估計之方法之態樣。此外,控制系統790可包括圖7中未展示之其他特徵。一般而言,控制系統790包括數位電子電路、電腦硬體、韌體及軟體中之一或多者。Referring to Figure 7, a control system 790 (which may be control system 290 or 690) that is part of a DUV light source (such as light source 200 or 600) is shown in a block diagram. Details are provided regarding the control system 790 with respect to the detection device 105/605 described herein and with respect to the methods of gas control and fluorine concentration estimation. Additionally, control system 790 may include other features not shown in FIG. 7 . Generally speaking, the control system 790 includes one or more of digital electronic circuits, computer hardware, firmware, and software.

控制系統790包括記憶體700,其可為唯讀記憶體及/或隨機存取記憶體。適合於有形地體現電腦程式指令及資料之儲存裝置包括所有形式之非揮發性記憶體,包括(藉助於實例)半導體記憶體裝置,諸如EPROM、EEPROM及快閃記憶體裝置;磁碟,諸如內部硬碟及可移磁碟;磁光碟;及CD-ROM磁碟。控制系統790亦可包括一或多個輸入裝置705 (諸如,鍵盤、觸控螢幕、麥克風、滑鼠、手持式輸入裝置等)及一或多個輸出裝置710 (諸如,揚聲器或監視器)。Control system 790 includes memory 700, which may be read-only memory and/or random access memory. Storage devices suitable for tangibly embodying computer program instructions and data include all forms of non-volatile memory, including (by way of example) semiconductor memory devices, such as EPROM, EEPROM, and flash memory devices; magnetic disks, such as internal Hard drives and removable disks; magneto-optical disks; and CD-ROM disks. Control system 790 may also include one or more input devices 705 (such as keyboards, touch screens, microphones, mice, handheld input devices, etc.) and one or more output devices 710 (such as speakers or monitors).

控制系統790包括一或多個可程式化處理器715及有形地體現於用於藉由可程式化處理器(諸如,處理器715)執行之機器可讀儲存裝置中的一或多個電腦程式產品720。一或多個可程式化處理器715可各自執行程式之指令以藉由對輸入資料進行操作及產生適當輸出來進行所要功能。大體而言,處理器715自記憶體700接收指令及資料。可藉由經專門設計之ASIC (特殊應用積體電路)補充前文中之任一者或前文中之任一者可併入於經專門設計之ASIC中。Control system 790 includes one or more programmable processors 715 and one or more computer programs tangibly embodied in a machine-readable storage device for execution by a programmable processor, such as processor 715 Product 720. One or more programmable processors 715 can each execute program instructions to perform desired functions by operating on input data and producing appropriate output. Generally speaking, processor 715 receives instructions and data from memory 700 . Any of the foregoing may be supplemented by or incorporated into a specially designed ASIC (Application Special Integrated Circuit).

控制系統790亦可在其他組件或模組中包括偵測設備105之控制器130、330、530 (在圖7中表示為方框730)及與氣體維持系統620之閥控制器653介接之氣體維持模組731。此等模組中之每一者可為藉由諸如處理器715之一或多個處理器執行之一組電腦程式產品。此外,控制器730/模組731中之任一者可存取儲存於記憶體700內之資料。The control system 790 may also include, among other components or modules, the controllers 130, 330, 530 of the detection device 105 (shown as block 730 in Figure 7) and interface with the valve controller 653 of the gas maintenance system 620. Gas maintenance module 731. Each of these modules may be a set of computer program products executed by one or more processors, such as processor 715 . In addition, any one of the controller 730/module 731 can access the data stored in the memory 700.

控制系統790內之控制器/特徵/模組之間及控制系統790內之控制器/特徵/模組與設備100之其他組件(其可為DUV光源600)之間的連接可為有線或無線的。Connections between controllers/features/modules within control system 790 and between controllers/features/modules within control system 790 and other components of device 100 (which may be DUV light source 600 ) may be wired or wireless. of.

儘管圖7中僅展示幾個模組,但控制系統790有可能包括其他模組。另外,儘管控制系統790表示為所有組件看起來共置之方框,但控制系統790有可能由空間或時間上彼此實體遠離的組件組成。舉例而言,控制器730可與感測設備116或氣體維持系統120實體地共置。作為另一實例,氣體維持模組731可與氣體維持系統620之閥控制器653實體地共置,且可與控制系統790之其他組件分開。Although only a few modules are shown in Figure 7, control system 790 may include other modules. Additionally, although control system 790 is shown as a block in which all components appear to be co-located, control system 790 may be composed of components that are physically remote from each other in space or time. For example, controller 730 may be physically co-located with sensing device 116 or gas maintenance system 120 . As another example, gas maintenance module 731 may be physically co-located with valve controller 653 of gas maintenance system 620 and may be separate from other components of control system 790 .

另外,控制系統790可包括微影模組732,其自光微影設備222之微影控制器接收指令,例如量測或估計腔室110之氣體混合物107內氟之濃度的指令。Additionally, the control system 790 may include a lithography module 732 that receives instructions from the lithography controller of the photolithography apparatus 222 , such as instructions to measure or estimate the concentration of fluorine in the gas mixture 107 of the chamber 110 .

參考圖8,在一些實施中,設備100經設計為設備800且偵測設備105經設計為與氟洗滌器804並行工作之偵測設備805,該氟洗滌器804與氣體維持系統820流體地連通。氟洗滌器804與氣體維持系統820結合使用以藉由在化學上使氣體混合物807內之氟反應以形成可例如經由排氣裝置安全地處理之化學物質而恰當地自腔室110排出氣體混合物807。Referring to Figure 8, in some implementations, device 100 is designed as device 800 and detection device 105 is designed as detection device 805 operating in parallel with fluorine scrubber 804, which is in fluid communication with gas maintenance system 820 . The fluorine scrubber 804 is used in conjunction with the gas maintenance system 820 to properly vent the gas mixture 807 from the chamber 110 by chemically reacting the fluorine within the gas mixture 807 to form chemicals that can be safely processed, such as via an exhaust device. .

將放出氣體維持系統820之混合氣體150之一部分引導至緩衝容器870,且隨後引導至包括氫氧化物845之另一氟洗滌器835。混合氣體150中之氟在化學上與氟洗滌器835中之氫氧化物845反應(以上文所論述之方式)且轉化為包括氧氣之新氣體混合物155。將新氣體混合物155引導至感測設備116,在此感測該新氣體混合物155。控制器130估計混合氣體150及氣體混合物107內之氧氣之濃度以及氟濃度且判定如何調整氣體維持系統820以進行氣體更新。在此實例中,氣體維持系統820包括流體地連接至三合氣體源851A及雙合氣體源851B之閥系統852。沿著線置放各種控制閥891以控制流速且控制引導穿過該等線之氣體之量。A portion of the mixed gas 150 released from the gas maintenance system 820 is directed to a buffer vessel 870 and then to another fluorine scrubber 835 including a hydroxide 845. The fluorine in the gas mixture 150 chemically reacts with the hydroxide 845 in the fluorine scrubber 835 (in the manner discussed above) and is converted into a new gas mixture 155 including oxygen. The new gas mixture 155 is directed to the sensing device 116 where it is sensed. The controller 130 estimates the oxygen concentration and the fluorine concentration in the mixed gas 150 and the gas mixture 107 and determines how to adjust the gas maintenance system 820 for gas renewal. In this example, gas maintenance system 820 includes valve system 852 fluidly connected to triple gas source 851A and dual gas source 851B. Various control valves 891 are placed along the lines to control the flow rate and control the amount of gas directed across the lines.

參考圖9,藉由設備100進行程序900以用於偵測腔室110之氣體混合物107中之氟之濃度。參考圖1之設備,但程序900同樣適用於參考圖2至8所描述之設備。偵測設備105自氣體放電腔室110接收包括氟之混合氣體150之一部分(905)。混合氣體150中之氟在化學上與氫氧化物145反應以形成包括水之新氣體混合物155 (910)。例如利用感測器115感測新氣體混合物155中之水之濃度(915)。且,基於水之感測到的濃度估計混合氣體150中之氟之濃度(920)。舉例而言,控制器130可基於來自水感測器115之輸出估計混合氣體150中之氟之濃度。Referring to FIG. 9 , a process 900 is performed by the apparatus 100 for detecting the concentration of fluorine in the gas mixture 107 of the chamber 110 . Reference is made to the device of Figure 1, but the process 900 is equally applicable to the device described with reference to Figures 2-8. The detection device 105 receives a portion of the mixed gas 150 including fluorine from the gas discharge chamber 110 (905). The fluorine in the gas mixture 150 chemically reacts with the hydroxide 145 to form a new gas mixture 155 including water (910). For example, the sensor 115 is used to sense the concentration of water in the new gas mixture 155 (915). And, the concentration of fluorine in the mixed gas 150 is estimated based on the sensed concentration of water (920). For example, the controller 130 may estimate the concentration of fluorine in the mixed gas 150 based on the output from the water sensor 115 .

偵測設備105可藉由自腔室110放出氣體混合物107 (釋放負壓)而接收混合氣體150 (905)。舉例而言,氣體維持系統120可包括使得氣體混合物107能夠自腔室110放出且隨後作為混合氣體150引導至偵測設備105之一系列閥。腔室110中之壓力可用以例如藉由使用一系列閥及真空泵產生負壓而對反應容器135或緩衝容器470加壓,將氣體混合物107推動離開腔室110且到達偵測設備105。反應容器135中所需之混合氣體150之量可基於水感測器115為得到精確且穩定的讀數之需求而判定。對混合氣體150之量之限制因素為反應空腔140中氫氧化物145之氟轉化容量。舉例而言,需要具有來自水感測器115之精確讀數,但亦需要使總氣流最小化,使得氫氧化物145可具有最大使用壽命。Detection device 105 may receive gas mixture 150 by venting gas mixture 107 from chamber 110 (releasing negative pressure) (905). For example, gas maintenance system 120 may include a series of valves that enable gas mixture 107 to be released from chamber 110 and subsequently directed as mixed gas 150 to detection device 105 . The pressure in the chamber 110 can be used to pressurize the reaction vessel 135 or the buffer vessel 470 , such as by using a series of valves and vacuum pumps to create negative pressure, pushing the gas mixture 107 out of the chamber 110 and to the detection device 105 . The amount of mixed gas 150 required in the reaction vessel 135 may be determined based on the requirements of the water sensor 115 to obtain accurate and stable readings. The limiting factor on the amount of mixed gas 150 is the fluorine conversion capacity of hydroxide 145 in reaction cavity 140 . For example, there is a need to have accurate readings from the water sensor 115, but also to minimize the total air flow so that the hydroxide 145 can have maximum service life.

藉由偵測設備105接收到(905)之混合氣體150可為自腔室110朝向氟洗滌器排出之混合氣體150,且因此混合氣體150可視為排出氣體。在圖8中展示此實施,其中混合氣體150中之氟在化學上與氟洗滌器835中之氫氧化物845反應且轉化成包括氧氣之新氣體混合物155。The mixed gas 150 received (905) by the detection device 105 may be the mixed gas 150 discharged from the chamber 110 toward the fluorine scrubber, and therefore the mixed gas 150 may be regarded as the exhaust gas. This implementation is shown in Figure 8, where the fluorine in the mixed gas 150 chemically reacts with the hydroxide 845 in the fluorine scrubber 835 and is converted into a new gas mixture 155 including oxygen.

可進行程序900以預測氣體更新,諸如氣體再填充或氣體注入。舉例而言,可藉由將第一氣體混合物自氣體維持系統120添加至腔室110而進行第一氣體更新,且在使用腔室110一定時間段之後,可進行程序900。在進行程序900之後,隨後可藉由將經調整第二氣體混合物自氣體維持系統120添加至腔室110而進行第二氣體更新。經調整第二氣體混合物具有可基於藉由程序900進行之量測的氟之濃度(或氟之量)。Process 900 may be performed to predict gas updates, such as gas refills or gas injections. For example, the first gas refresh may be performed by adding the first gas mixture from the gas maintenance system 120 to the chamber 110, and after using the chamber 110 for a certain period of time, the process 900 may be performed. After performing process 900, a second gas refresh may then occur by adding an adjusted second gas mixture from the gas maintenance system 120 to the chamber 110. The adjusted second gas mixture has a concentration of fluorine (or an amount of fluorine) that may be based on measurements made by process 900 .

可藉由形成加上水及氧氣之無機氟化物化合物使氟在化學上與氫氧化物145反應(910)。此無機氟化物化合物(其存在於新氣體混合物155中)並不與水感測器115相互作用。Fluorine can chemically react with hydroxide 145 (910) by forming an inorganic fluoride compound coupled with water and oxygen. This inorganic fluoride compound (which is present in the new gas mixture 155 ) does not interact with the water sensor 115 .

在使氟在化學上與氫氧化物145反應以形成新氣體混合物155 (910)之後,可將新氣體混合物155自反應容器135轉移至量測容器170中,以使得能夠感測新氣體混合物155中之水之濃度(915)。因此可藉由將量測容器170內之感測器115暴露於新氣體混合物155來感測新氣體混合物155中之水之濃度(915)。感測新氣體混合物155中之水之濃度(915)而不必利用另一材料稀釋混合氣體150。After chemically reacting fluorine with hydroxide 145 to form new gas mixture 155 (910), new gas mixture 155 may be transferred from reaction vessel 135 to measurement vessel 170 to enable sensing of new gas mixture 155 The concentration of water in (915). The concentration of water in the new gas mixture 155 can therefore be sensed by exposing the sensor 115 in the measurement container 170 to the new gas mixture 155 (915). The concentration of water in the new gas mixture 155 is sensed (915) without having to dilute the gas mixture 150 with another material.

此外,在化學反應(910)開始之後,直至已過去預定時間段或僅在已過去預定時間段之後才可適合於等待感測新氣體混合物155中之水之濃度(915)。此將確保在將水感測器115暴露於新氣體混合物155之前混合氣體150中之足夠的氟已轉化成水及無機氟化物化合物。取決於混合氣體150中之氟之相對量及氫氧化物145之總體積,可能會花費若干秒或若干分鐘以將氟完全轉化成水。Furthermore, after the chemical reaction (910) has started, it may be appropriate to wait for sensing the concentration of water in the new gas mixture 155 (915) until or only after a predetermined time period has elapsed. This will ensure that sufficient fluorine in the gas mixture 150 has been converted to water and inorganic fluoride compounds before the water sensor 115 is exposed to the new gas mixture 155 . Depending on the relative amounts of fluorine in the gas mixture 150 and the total volume of hydroxide 145, it may take several seconds or several minutes to completely convert the fluorine into water.

在一些實施中,可藉由使低速率(例如約0.1 slpm或更低)下之混合氣體150跨越或通過氫氧化物145以形成特定流速下之新氣體混合物155來實施化學反應(910)係有可能的。在此狀況下,可以連續方式感測水(915)。可自在一段時間內感測到的水量測值(915)之積分或感測到的水量測值(915)何時已達至穩定狀態來估計氟之濃度(920)。In some implementations, the chemical reaction (910) system may be performed by passing the mixed gas 150 at a low velocity (eg, about 0.1 slpm or less) across or through the hydroxide 145 to form a new gas mixture 155 at a specific flow rate. possible. In this situation, water can be sensed in a continuous manner (915). The concentration of fluorine (920) may be estimated from the integration of the sensed water measurements (915) over a period of time or when the sensed water measurements (915) have reached a steady state.

基於感測到的水之濃度(915)且亦基於將混合氣體150中之氟轉化成水之化學反應之瞭解來估計新氣體混合物155中之氟(920)。The fluorine in the new gas mixture 155 is estimated (920) based on the sensed concentration of water (915) and also based on knowledge of the chemical reactions that convert the fluorine in the gas mixture 150 to water.

在完成程序900後(亦即,在已在920處估計混合氣體150內氟之濃度之後),隨後自量測容器170排出(移除)新氣體混合物155以准許同樣對新批次之混合氣體150進行程序900。After completion of procedure 900 (ie, after the concentration of fluorine in the gas mixture 150 has been estimated at 920), the new gas mixture 155 is then drained (removed) from the measurement vessel 170 to permit the same for a new batch of the gas mixture. 150 proceeds to procedure 900.

參考圖10,一旦估計氟濃度(920)且在完成程序900後,藉由設備100進行程序1000。氣體維持系統120自偵測設備105之控制器130接收輸出,且基於氟之經估計濃度調整來自一組氣體供應器(諸如氣體源651A、651B、651C等)之氣體混合物中之氟之相對濃度(1005)。氣體維持系統120藉由經由套管系統127將經調整氣體混合物添加至腔室110來進行氣體更新(1010)直至腔室110內之壓力達至所需水平。可藉由監視氣體維持系統120內之閥之時序來完成及追蹤氣體更新。Referring to Figure 10, once the fluorine concentration is estimated (920) and after process 900 is completed, process 1000 is performed by device 100. Gas maintenance system 120 receives output from controller 130 of detection device 105 and adjusts the relative concentration of fluorine in the gas mixture from a set of gas suppliers (such as gas sources 651A, 651B, 651C, etc.) based on the estimated concentration of fluorine. (1005). The gas maintenance system 120 performs gas renewal (1010) by adding a modified gas mixture to the chamber 110 through the casing system 127 until the pressure within the chamber 110 reaches the desired level. Gas updates may be accomplished and tracked by monitoring the timing of valves within the gas maintenance system 120 .

舉例而言,參考圖2,氣體更新(1010)可包括利用增益介質及緩衝氣體以及氟之混合物填充氣體放電腔室210,其中該增益介質包括稀有氣體及氟且緩衝氣體包括惰性氣體。有可能相對於何時進行氟濃度估計(900)而延遲氣體更新(1010)之進行。在一些實施中,若控制器130判定氣體混合物107中之氟之濃度已降至低於可接受水平,則可緊接地在估計(900)之後進行調整(1005)及氣體更新(1010)。在一些實施中,有可能延遲氟之調整(1005)直至判定氣體混合物107中之氟之濃度已降至低於可接受水平。舉例而言,若控制器130判定氣體混合物107中之氟之濃度仍然較高,但設備100出於其他原因必須進行氣體更新,則有可能進行氣體更新而不需要以提高氣體混合物107中之氟之水平為目標。For example, referring to Figure 2, gas updating (1010) may include filling the gas discharge chamber 210 with a mixture of a gain medium including a noble gas and a buffer gas and fluorine, where the gain medium includes a noble gas and fluorine and the buffer gas includes an inert gas. It is possible to delay the gas update (1010) relative to when the fluorine concentration estimate (900) is made. In some implementations, if the controller 130 determines that the concentration of fluorine in the gas mixture 107 has dropped below an acceptable level, the estimation (900) may be followed by an adjustment (1005) and a gas update (1010). In some implementations, it may be possible to delay fluorine adjustment (1005) until it is determined that the concentration of fluorine in gas mixture 107 has dropped below an acceptable level. For example, if the controller 130 determines that the concentration of fluorine in the gas mixture 107 is still high, but the device 100 must perform a gas refresh for other reasons, it may be possible to perform a gas refresh without increasing the fluorine in the gas mixture 107 level as the target.

參考圖11,在一些實施中,偵測設備305進行程序1100而非程序900以估計混合氣體150中之氟之濃度。程序1100類似於程序900,包括以下步驟:自氣體放電腔室110接收包括氟之混合氣體150之部分(905);及使混合氣體150中之氟在化學上與氫氧化物145反應以形成包括水及氧氣之新氣體混合物155 (910)。程序1100判定新氣體混合物155中之氟之濃度是否降至低於下限值(1112)。舉例而言,流體地連接至反應空腔140之氟感測器360可進行此判定(1112)且控制器330可向前繼續進行僅在新氣體混合物155中之氟之濃度已降至低於下限值時(1112)才指示感測設備116感測新氣體混合物155中之水之濃度(經由感測器115)及氧氣之濃度(經由感測器117)兩者(915)的步驟。如前所述,基於氧氣之感測到的濃度估計混合氣體150中之氟之濃度(920)。Referring to FIG. 11 , in some implementations, the detection device 305 performs process 1100 instead of process 900 to estimate the fluorine concentration in the mixed gas 150 . Process 1100 is similar to process 900 and includes the following steps: receiving a portion of the mixed gas 150 including fluorine from the gas discharge chamber 110 (905); and chemically reacting the fluorine in the mixed gas 150 with the hydroxide 145 to form a mixture including fluorine and fluorine. New gas mixtures of water and oxygen 155 (910). Process 1100 determines whether the fluorine concentration in new gas mixture 155 has fallen below a lower limit (1112). For example, fluorine sensor 360 fluidly connected to reaction cavity 140 may make this determination (1112) and controller 330 may proceed only if the concentration of fluorine in new gas mixture 155 has dropped below The step of instructing the sensing device 116 to sense both the concentration of water (via the sensor 115 ) and the concentration of oxygen (via the sensor 117 ) in the new gas mixture 155 ( 915 ) is only when the lower limit value is reached ( 1112 ). As previously described, the concentration of fluorine in the mixed gas 150 is estimated based on the sensed concentration of oxygen (920).

在一些實施中,下限值為基於感測器115之損壞臨限值而判定之值。在其他實施中,下限值為基於該感測器115之誤差臨限值而判定之值。舉例而言,下限值可為0.1 ppm。In some implementations, the lower limit value is a value determined based on a damage threshold of sensor 115 . In other implementations, the lower limit value is a value determined based on the error threshold of the sensor 115 . For example, the lower limit value may be 0.1 ppm.

在以下編號條項中陳述本發明之其他態樣。 1.一種方法,其包含: 自一氣體放電腔室接收一混合氣體之至少一部分,其中該混合氣體包括氟; 使該混合氣體部分中之該氟與一氫氧化物反應以形成包括氧氣及水之一新氣體混合物; 感測該新氣體混合物內之水之一濃度;及 基於水之感測到的濃度估計該混合氣體部分內之氟之一濃度。 2.如條項1之方法,其中該氫氧化物包括一鹼土金屬氫氧化物。 3.如條項1之方法,其中該氫氧化物缺少一鹼金屬及碳。 4.如條項1之方法,其中該混合氣體為包含一增益介質與一緩衝氣體之至少一混合物之一準分子雷射氣體。 5.如條項1之方法,其進一步包含: 基於該混合氣體部分中之氟之經估計濃度調整來自一組氣體供應器之一氣體混合物中之氟之一相對濃度;及 藉由將經調整氣體混合物自該等氣體供應器添加至該氣體放電腔室來進行一氣體更新。 6.如條項5之方法,其中進行該氣體更新包含:利用一增益介質及一緩衝氣體以及氟之一混合物填充該氣體放電腔室。 7.如條項6之方法,其中利用該增益介質與該緩衝氣體之該混合物填充該氣體放電腔室包含:利用一增益介質填充該氣體放電腔室,該增益介質包括一稀有氣體及一鹵素,及包括一惰性氣體之一緩衝氣體。 8.如條項7之方法,其中該稀有氣體包括氬氣、氪氣或氙氣;該鹵素包括氟;且該惰性氣體包括氦氣或氖氣。 9.如條項6之方法,其中利用該增益介質及該緩衝氣體以及氟之該混合物填充該氣體放電腔室包含: 將該增益介質及該緩衝氣體以及氟之該混合物添加至該氣體放電腔室中之一現有混合氣體;或 至少利用該增益介質與該緩衝氣體以及氟之該混合物替換該氣體放電腔室中之一現有混合氣體。 10.如條項5之方法,其中進行該氣體更新包含:進行一氣體再填充方案或一氣體注入方案中之一或多者。 11.如條項1之方法,其中自該氣體放電腔室接收該混合氣體之至少該部分包含:在對該氣體放電腔室進行一氣體更新之前接收該混合氣體部分,其中該氣體更新包含將一氣體混合物自一組氣體供應器添加至該氣體放電腔室,其中該氣體混合物包括至少一些氟。 12.如條項11之方法,其中進行該氣體更新包含:進行一氣體再填充方案或一氣體注入方案中之一或多者。 13.如條項1之方法,其中自該氣體放電腔室接收該混合氣體之至少該部分包含:自該氣體放電腔室放出該混合氣體;及將所放出之混合氣體引導至容納該氫氧化物之一反應容器。 14.如條項13之方法,其進一步包含將該新氣體混合物自該反應容器轉移至一量測容器,其中該感測該新氣體混合物內之水之該濃度包含感測該量測容器內之該新氣體混合物內之水之該濃度。 15.如條項13之方法,其中感測該新氣體混合物內之水之該濃度包含將該量測容器內之一感測器暴露於該新氣體混合物。 16.如條項1之方法,其進一步包含在已估計該混合氣體部分內之氟之該濃度之後,自該量測容器排出該新氣體混合物。 17.如條項1之方法,其中感測該新氣體混合物內之水之該濃度包含在不利用另一材料稀釋該混合氣體部分之情況下感測該新氣體混合物內之水之該濃度。 18.如條項1之方法,其中使該混合氣體部分與該氫氧化物反應以形成包括水之該新氣體混合物包含形成加上水之一無機氟化物化合物。 19.如條項18之方法,其中該氫氧化物包含氫氧化鈣,且該無機氟化物化合物包含氟化鈣。 20.如條項1之方法,其中感測該新氣體混合物內之水之該濃度包含:在該反應開始之後僅在已過去一預定時間段之後才感測該新氣體混合物內之水之該濃度。 21.如條項1之方法,其中該混合氣體部分為一排出氣體且使該混合氣體部分與該氫氧化物反應以形成包括水之該新氣體混合物包含自該排出氣體移除氟。 22.如條項1之方法,其中基於水之該感測到的濃度估計該混合氣體部分內之氟之該濃度包含:僅基於水之該感測到的濃度及該混合氣體部分中之氟與該氫氧化物之間的化學反應來估計。 23.如條項1之方法,其中該混合氣體部分中之氟之該濃度為約百萬分之500至2000。 24.如條項1之方法,其中形成包括水之該新氣體混合物的該混合氣體部分中之該氟與該氫氧化物之該反應為穩定的。 25.如條項1之方法,其中使該混合氣體部分中之該氟與該氫氧化物反應以形成包括水之該新氣體混合物包含:進行一反應,該反應為線性且提供該混合氣體部分中之氟之該濃度與該新氣體混合物中之該水之該濃度之間的一直接相關性。 26.如條項1之方法,其進一步包含感測該新氣體混合物內之氧氣之一濃度,其中估計該混合氣體部分內之氟之該濃度亦基於氧氣之該感測到的濃度。 27.一種方法,其包含: 藉由將一第一氣體混合物自一組氣體供應器添加至一氣體放電腔室來進行一第一氣體更新; 在該第一氣體更新之後移除來自該氣體放電腔室之一混合氣體之至少一部分,其中該混合氣體包括氟; 使經移除之混合氣體部分之該氟與一反應物反應以形成包括氧氣及水之一新氣體混合物; 感測該新氣體混合物內之水之一濃度; 基於水之感測到的濃度估計該經移除之混合氣體部分內之氟之一濃度; 基於該經移除之混合氣體部分中之氟之經估計濃度調整來自該組氣體供應器之一第二氣體混合物中之氟之一相對濃度;及 藉由將經調整第二氣體混合物自該等氣體供應器添加至該氣體放電腔室來進行一第二氣體更新。 28.如條項27之方法,其中該反應物包含氫氧化物。 29.如條項27之方法,其中該氣體放電腔室中之該混合氣體包含一準分子雷射氣體,該準分子雷射氣體包括一增益介質與一緩衝氣體之至少一混合物。 30.如條項27之方法,其中基於水之該感測到的濃度估計該經移除之混合氣體部分內之氟之該濃度包含:在不量測該經移除之混合氣體部分內之該氟濃度之情況下估計該經移除之混合氣體部分內之該氟濃度。 31.一種設備,其包含 一偵測設備,其流體地連接至一準分子氣體放電系統之每一氣體放電腔室,其中每一偵測設備包含: 一容器,其界定容納一氫氧化物之一反應空腔且流體地連接至用於在該反應空腔中自該氣體放電腔室接收包括氟之混合氣體之該氣體放電腔室,該容器使得接收到之混合氣體之該氟與該氫氧化物之間的一反應能夠形成包括氧氣及水之一新氣體混合物;及 一水感測器,其經組態以流體地連接至該新氣體混合物,且當流體地連接至該新氣體混合物時,感測該新氣體混合物內之水之一量;及 一控制系統,其連接至該偵測設備,該控制系統經組態以: 自該水感測器接收輸出且估計自該氣體放電腔室接收到之該混合氣體中之氟之一濃度; 判定是否應基於該混合氣體中之氟之該經估計濃度而調整來自一氣體維持系統之一氣體供應系統的一氣體混合物中之氟之一濃度;及 將一信號發送至該氣體維持系統,指示該氣體維持系統在對該氣體放電腔室之一氣體更新期間調整自該氣體維持系統之該氣體供應系統供應至該氣體放電腔室之一氣體混合物中之氟之該相對濃度。 32.如條項31之設備,其中該準分子氣體放電系統之每一氣體放電腔室容納一能量源且含有包括一準分子雷射氣體之一氣體混合物,該準分子雷射氣體包括一增益介質及氟。 33.如條項31之設備,其中: 該偵測設備進一步包含一量測容器,其流體地連接至該反應容器之該反應空腔且界定經組態以接收該新氣體混合物之一量測空腔;且 該水感測器經組態以感測該量測空腔中之該新氣體混合物內之水之一量。 34.如條項31之設備,其中該經移除之混合氣體部分中之氟之該濃度為約百萬分之500至2000。 35.如條項31之設備,其中該準分子氣體放電系統包括複數個氣體放電腔室,且該偵測設備流體地連接至該複數個氣體放電腔室中之每一氣體放電腔室,其中該偵測設備包括複數個容器,每一容器界定容納該氫氧化物之一反應空腔,且每一容器流體地連接至該等氣體放電腔室中之一者且該偵測設備包括複數個水感測器,每一氧氣感測器均與一個容器相關聯。 36.如條項31之設備,其中該準分子氣體放電系統包括複數個氣體放電腔室,且該偵測設備流體地連接至該複數個氣體放電腔室中之每一氣體放電腔室,其中該偵測設備包括複數個容器,每一容器界定容納該氫氧化物之一反應空腔,且每一容器流體地連接至該等氣體放電腔室中之一者且該偵測設備包括與所有該等容器流體地連接之單個水感測器。 Other aspects of the invention are set forth in the following numbered items. 1. A method comprising: receiving at least a portion of a mixed gas from a gas discharge chamber, wherein the mixed gas includes fluorine; reacting the fluorine in the mixed gas portion with a hydroxide to form a new gas mixture including oxygen and water; sensing a concentration of water in the new gas mixture; and A concentration of fluorine within the mixed gas portion is estimated based on the sensed concentration of water. 2. The method of clause 1, wherein the hydroxide includes an alkaline earth metal hydroxide. 3. The method of item 1, wherein the hydroxide lacks an alkali metal and carbon. 4. The method of item 1, wherein the mixed gas is an excimer laser gas including at least a mixture of a gain medium and a buffer gas. 5. The method of item 1, which further includes: Adjust the relative concentration of fluorine in a gas mixture from a set of gas supplies based on the estimated concentration of fluorine in that portion of the gas mixture; and A gas refresh is performed by adding an adjusted gas mixture from the gas suppliers to the gas discharge chamber. 6. The method of clause 5, wherein performing the gas updating includes filling the gas discharge chamber with a gain medium and a mixture of buffer gas and fluorine. 7. The method of clause 6, wherein filling the gas discharge chamber with the mixture of the gain medium and the buffer gas includes: filling the gas discharge chamber with a gain medium, the gain medium including a rare gas and a halogen , and a buffer gas including an inert gas. 8. The method of clause 7, wherein the rare gas includes argon, krypton or xenon; the halogen includes fluorine; and the inert gas includes helium or neon. 9. The method of clause 6, wherein filling the gas discharge chamber with the mixture of the gain medium and the buffer gas and fluorine includes: Add the mixture of the gain medium and the buffer gas and fluorine to an existing gas mixture in the gas discharge chamber; or Replace at least one of the existing mixed gases in the gas discharge chamber with the mixture of the gain medium and the buffer gas and fluorine. 10. The method of clause 5, wherein performing the gas renewal includes: performing one or more of a gas refilling program or a gas injection program. 11. The method of clause 1, wherein receiving at least the portion of the mixed gas from the gas discharge chamber includes: receiving the portion of the mixed gas before performing a gas update on the gas discharge chamber, wherein the gas update includes A gas mixture is added to the gas discharge chamber from a set of gas supplies, wherein the gas mixture includes at least some fluorine. 12. The method of clause 11, wherein performing the gas update includes: performing one or more of a gas refilling program or a gas injection program. 13. The method of clause 1, wherein receiving at least the portion of the mixed gas from the gas discharge chamber includes: releasing the mixed gas from the gas discharge chamber; and directing the released mixed gas to accommodate the hydrogen oxidation chamber. A reaction vessel. 14. The method of clause 13, further comprising transferring the new gas mixture from the reaction vessel to a measurement vessel, wherein sensing the concentration of water in the new gas mixture comprises sensing the concentration of water in the measurement vessel. the concentration of water in the new gas mixture. 15. The method of clause 13, wherein sensing the concentration of water in the new gas mixture includes exposing a sensor in the measurement vessel to the new gas mixture. 16. The method of clause 1, further comprising discharging the new gas mixture from the measuring container after estimating the concentration of fluorine in the mixed gas portion. 17. The method of clause 1, wherein sensing the concentration of water in the new gas mixture comprises sensing the concentration of water in the new gas mixture without diluting the portion of the mixed gas with another material. 18. The method of clause 1, wherein reacting the mixed gas portion with the hydroxide to form the new gas mixture including water includes forming an inorganic fluoride compound plus water. 19. The method of clause 18, wherein the hydroxide comprises calcium hydroxide and the inorganic fluoride compound comprises calcium fluoride. 20. The method of clause 1, wherein sensing the concentration of water in the new gas mixture comprises sensing the concentration of water in the new gas mixture only after a predetermined period of time has elapsed after the reaction has begun. concentration. 21. The method of clause 1, wherein the mixed gas portion is a vent gas and reacting the mixed gas portion with the hydroxide to form the new gas mixture including water includes removing fluorine from the vent gas. 22. The method of clause 1, wherein estimating the concentration of fluorine in the mixed gas portion based on the sensed concentration of water includes: based solely on the sensed concentration of water and fluorine in the mixed gas portion The chemical reaction with the hydroxide is estimated. 23. The method of clause 1, wherein the concentration of fluorine in the mixed gas portion is about 500 to 2000 parts per million. 24. The method of clause 1, wherein the reaction of the fluorine and the hydroxide in the mixed gas portion forming the new gas mixture including water is stable. 25. The method of clause 1, wherein reacting the fluorine and the hydroxide in the mixed gas portion to form the new gas mixture including water includes: performing a reaction that is linear and provides the mixed gas portion There is a direct correlation between the concentration of fluorine in the new gas mixture and the concentration of the water in the new gas mixture. 26. The method of clause 1, further comprising sensing a concentration of oxygen in the new gas mixture, wherein estimating the concentration of fluorine in the mixed gas portion is also based on the sensed concentration of oxygen. 27. A method comprising: performing a first gas update by adding a first gas mixture from a set of gas suppliers to a gas discharge chamber; removing at least a portion of a mixed gas from the gas discharge chamber after the first gas refresh, wherein the mixed gas includes fluorine; reacting the fluorine in the removed portion of the mixed gas with a reactant to form a new gas mixture including oxygen and water; sensing a concentration of water in the new gas mixture; Estimating a concentration of fluorine in the removed portion of the mixed gas based on the sensed concentration of water; Adjust the relative concentration of fluorine in a second gas mixture from the set of gas suppliers based on the estimated concentration of fluorine in the removed portion of the mixed gas; and A second gas update is performed by adding an adjusted second gas mixture from the gas suppliers to the gas discharge chamber. 28. The method of clause 27, wherein the reactant comprises a hydroxide. 29. The method of clause 27, wherein the mixed gas in the gas discharge chamber includes an excimer laser gas including at least a mixture of a gain medium and a buffer gas. 30. The method of clause 27, wherein estimating the concentration of fluorine in the removed mixed gas portion based on the sensed concentration of water includes: without measuring the fluorine in the removed mixed gas portion. The fluorine concentration in the removed mixed gas portion is estimated given the fluorine concentration. 31. A device comprising A detection device fluidly connected to each gas discharge chamber of an excimer gas discharge system, wherein each detection device includes: A container defining a reaction cavity containing a hydroxide and fluidly connected to the gas discharge chamber for receiving a mixed gas including fluorine from the gas discharge chamber in the reaction cavity, the container such that A reaction between the fluorine and the hydroxide of the received mixed gas can form a new gas mixture including oxygen and water; and a water sensor configured to be fluidly connected to the new gas mixture and, when fluidly connected to the new gas mixture, sense an amount of water within the new gas mixture; and A control system connected to the detection device, the control system configured to: receiving an output from the water sensor and estimating a concentration of fluorine in the mixed gas received from the gas discharge chamber; determine whether a concentration of fluorine in a gas mixture from a gas supply system of a gas maintenance system should be adjusted based on the estimated concentration of fluorine in the gas mixture; and Send a signal to the gas maintenance system, instructing the gas maintenance system to adjust the gas mixture supplied from the gas supply system of the gas maintenance system to the gas discharge chamber during a gas update period of the gas discharge chamber The relative concentration of fluorine. 32. The apparatus of clause 31, wherein each gas discharge chamber of the excimer gas discharge system contains an energy source and contains a gas mixture including an excimer laser gas, the excimer laser gas including a gain Medium and fluorine. 33. Equipment as specified in item 31, wherein: The detection device further includes a measurement vessel fluidly connected to the reaction cavity of the reaction vessel and defining a measurement cavity configured to receive the new gas mixture; and The water sensor is configured to sense an amount of water in the new gas mixture in the measurement cavity. 34. The equipment of clause 31, wherein the concentration of fluorine in the removed portion of the mixed gas is about 500 to 2000 parts per million. 35. The device of clause 31, wherein the excimer gas discharge system includes a plurality of gas discharge chambers, and the detection device is fluidly connected to each of the plurality of gas discharge chambers, wherein The detection device includes a plurality of containers, each container defining a reaction cavity containing the hydroxide, and each container is fluidly connected to one of the gas discharge chambers and the detection device includes a plurality of Water sensors, each oxygen sensor is associated with a container. 36. The device of clause 31, wherein the excimer gas discharge system includes a plurality of gas discharge chambers, and the detection device is fluidly connected to each of the plurality of gas discharge chambers, wherein The detection device includes a plurality of containers, each container defining a reaction cavity containing the hydroxide, and each container is fluidly connected to one of the gas discharge chambers and the detection device includes and all A single water sensor that is fluidly connected to the containers.

其他實施係在以下申請專利範圍之範疇內。Other implementations are within the scope of the following patent applications.

100:設備 105:偵測設備 107:氣體混合物 110:腔室 115:水感測器 116:感測設備 117:氧氣感測器 120:氣體維持系統 127:套管系統 130:控制器 135:反應容器 137:套管 140:反應空腔 145:氫氧化物 150:混合氣體 155:新氣體混合物 170:量測容器 175:量測空腔 177:套管 200:光源 207:氣體混合物 210:氣體放電腔室 211:光束 222:光微影設備 225:準分子氣體放電系統 230:能量源 290:控制系統 300:設備 305:偵測設備 330:控制器 360:氟感測器 365:流動控制裝置 370:量測容器 375:量測空腔 400:設備 405:偵測設備 470:緩衝容器 500:設備 505:偵測設備 507_1,507_2…507_i:氣體混合物 510:腔室 510_1,510_2…510_i:腔室 516:感測設備 516_1,516_2…516_i:感測設備 520:氣體維持系統 527:主套管系統 527_1,527_3…527_i:套管系統 530:控制器 535_1,535_2…535_i:反應容器 537_1,537_2…537_i:套管 545_1,545_2…545_i:氫氧化物 550_1,550_2…550_i:混合氣體 555_1,555_2…555_i:新氣體混合物 600:DUV光源 601:第一載物台 602:第二載物台 605:偵測設備 606:光束 607_1:氣體混合物 607_2:氣體混合物 610_1:MO氣體放電腔室 610_2:PA氣體放電腔室 620:氣體維持系統 625:氣體放電系統 630:控制器 630_1:細長電極 630_2:細長電極 651A:氣體源 651B:氣體源 651C:氣體源 652:閥系統 653:閥控制器 680:光譜特徵選擇系統 681:輸出耦合器 682:返回光束 683:光束耦合設備 689:氣體傾卸 690:控制系統 700:記憶體 705:輸入裝置 710:輸出裝置 715:處理器 720:電腦程式產品 730:控制器 731:氣體維持模組 732:微影模組 790:控制系統 800:設備 804:氟洗滌器 805:偵測設備 807:氣體混合物 820:氣體維持系統 835:氟洗滌器 845:氫氧化物 820:氣體維持系統 851A:三合氣體源 851B:雙合氣體源 852:閥系統 870:緩衝器 891:閥 900:程序 905:步驟 910:步驟 915:步驟 920:步驟 1000:程序 1005:步驟 1010:步驟 1100:程序 1112:步驟 100:Equipment 105:Detection equipment 107: Gas mixture 110: Chamber 115:Water sensor 116: Sensing equipment 117: Oxygen sensor 120:Gas maintenance system 127: Casing system 130:Controller 135: Reaction vessel 137: Casing 140: Reaction cavity 145:Hydroxide 150:Mixed gas 155:New gas mixture 170: Measuring container 175: Measure the cavity 177: Casing 200:Light source 207: Gas mixture 210:Gas discharge chamber 211:Beam 222:Light lithography equipment 225: Excimer gas discharge system 230:Energy source 290:Control system 300:Equipment 305:Detection equipment 330:Controller 360:Fluorine sensor 365:Flow control device 370: Measuring container 375: Measure the cavity 400:Equipment 405:Detection equipment 470:Buffer container 500:Equipment 505:Detection equipment 507_1,507_2…507_i: Gas mixture 510: Chamber 510_1,510_2…510_i: Chamber 516: Sensing equipment 516_1,516_2…516_i: Sensing device 520:Gas maintenance system 527: Main casing system 527_1,527_3…527_i: Casing system 530:Controller 535_1,535_2…535_i: Reaction vessel 537_1,537_2…537_i: Casing 545_1,545_2…545_i:hydroxide 550_1,550_2…550_i: mixed gas 555_1,555_2…555_i: New gas mixture 600:DUV light source 601:First stage 602: Second stage 605:Detection equipment 606:Beam 607_1: Gas mixture 607_2: Gas mixture 610_1:MO gas discharge chamber 610_2:PA gas discharge chamber 620:Gas maintenance system 625:Gas discharge system 630:Controller 630_1: Slender electrode 630_2: Slender electrode 651A:Gas source 651B:Gas source 651C:Gas source 652:Valve system 653:Valve controller 680:Spectral Feature Selection System 681:Output coupler 682:Return beam 683: Beam coupling equipment 689:Gas dumping 690:Control system 700:Memory 705:Input device 710:Output device 715: Processor 720:Computer program products 730:Controller 731:Gas maintenance module 732:Micro shadow module 790:Control system 800:Equipment 804:Fluorine scrubber 805:Detection equipment 807: Gas mixture 820:Gas maintenance system 835:Fluorine scrubber 845:Hydroxide 820:Gas maintenance system 851A: Triple gas source 851B: Double gas source 852:Valve system 870:Buffer 891:Valve 900:Program 905:Step 910: Steps 915: Steps 920: Steps 1000:Program 1005: Steps 1010: Steps 1100:Program 1112: Steps

圖1為包括經組態以量測腔室內之氣體混合物中之氟之濃度之偵測設備之設備的方塊圖;1 is a block diagram of an apparatus including a detection device configured to measure the concentration of fluorine in a gas mixture within a chamber;

圖2為實施為產生引導至光微影設備之光束之深紫外線(DUV)光源之一部分的圖1之設備之方塊圖;Figure 2 is a block diagram of the apparatus of Figure 1 implemented as part of a deep ultraviolet (DUV) light source that generates a beam directed to the photolithography apparatus;

圖3為圖1之設備之偵測設備之實施之方塊圖,其中該偵測設備包括氟感測器;Figure 3 is a block diagram of an implementation of the detection device of the device of Figure 1, wherein the detection device includes a fluorine sensor;

圖4為圖1之設備之實施之方塊圖,其中該偵測設備包括緩衝容器;Figure 4 is a block diagram of an implementation of the device of Figure 1, wherein the detection device includes a buffer container;

圖5為圖1之設備之實施之方塊圖,其中該偵測設備包括複數個反應容器,每一反應容器與複數個腔室中之一者相關聯;Figure 5 is a block diagram of an implementation of the apparatus of Figure 1, wherein the detection apparatus includes a plurality of reaction vessels, each reaction vessel being associated with one of a plurality of chambers;

圖6為圖2之設備之實施之方塊圖,其中展示例示性DUV光源之細節;Figure 6 is a block diagram of an implementation of the apparatus of Figure 2 showing details of an exemplary DUV light source;

圖7為圖2或6中所展示之DUV光源之一部分的控制系統之實施之方塊圖;Figure 7 is a block diagram of an implementation of a control system for a portion of the DUV light source shown in Figure 2 or 6;

圖8為圖1之設備之另一實施之方塊圖,其中該設備結合氟洗滌器實施;Figure 8 is a block diagram of another implementation of the equipment of Figure 1, wherein the equipment is implemented in conjunction with a fluorine scrubber;

圖9為藉由用於偵測腔室之氣體混合物中之氟之濃度之偵測設備進行之程序的流程圖;Figure 9 is a flow chart of a process performed by a detection device for detecting the concentration of fluorine in a gas mixture in a chamber;

圖10為一旦估計氟濃度且在完成圖9之程序後藉由設備進行之程序之流程圖;及Figure 10 is a flowchart of the process performed by the device once the fluorine concentration is estimated and after completion of the process of Figure 9; and

圖11為用以估計腔室中之氣體混合物中之氟之濃度之藉由偵測設備進行之程序而非圖9之程序的流程圖。FIG. 11 is a flow chart of a process by a detection device for estimating the concentration of fluorine in a gas mixture in a chamber instead of the process of FIG. 9 .

107:氣體混合物 107: Gas mixture

110:腔室 110: Chamber

115:水感測器 115:Water sensor

116:感測設備 116: Sensing equipment

117:氧氣感測器 117: Oxygen sensor

120:氣體維持系統 120:Gas maintenance system

127:套管系統 127: Casing system

130:控制器 130:Controller

135:反應容器 135: Reaction vessel

137:套管 137: Casing

140:反應空腔 140: Reaction cavity

145:氫氧化物 145:Hydroxide

150:混合氣體 150:Mixed gas

155:新氣體混合物 155:New gas mixture

170:量測容器 170: Measuring container

175:量測空腔 175: Measure the cavity

177:套管 177: Casing

400:設備 400:Equipment

405:偵測設備 405:Detection equipment

470:緩衝容器 470:Buffer container

Claims (14)

一種用於氣體偵測之設備,其包含 一偵測設備,其流體地連接至一準分子氣體放電系統之至少一氣體放電腔室,該偵測設備包含: 一容器,其界定容納一氫氧化物之一反應空腔且流體地連接至用於在該反應空腔中自該氣體放電腔室接收包括氟之混合氣體之該氣體放電腔室,該容器使得接收到之混合氣體之該氟與該氫氧化物之間的一反應能夠形成包括氧氣及水之一新氣體混合物;及 一水感測器,其流體地連接至該新氣體混合物並經調適以感測該新氣體混合物內之水之一量;及 一控制系統,其經組態以基於由該水感測器所感測之該新氣體混合物內之水之該量估計自該氣體放電腔室接收到之該混合氣體中之氟之一濃度。 A device for gas detection, which includes A detection device fluidly connected to at least one gas discharge chamber of an excimer gas discharge system, the detection device comprising: A container defining a reaction cavity containing a hydroxide and fluidly connected to the gas discharge chamber for receiving a mixed gas including fluorine from the gas discharge chamber in the reaction cavity, the container such that A reaction between the fluorine and the hydroxide of the received mixed gas can form a new gas mixture including oxygen and water; and a water sensor fluidly connected to the new gas mixture and adapted to sense an amount of water within the new gas mixture; and A control system configured to estimate a concentration of fluorine in the mixed gas received from the gas discharge chamber based on the amount of water in the new gas mixture sensed by the water sensor. 如請求項1之設備,其中該準分子氣體放電系統之每一氣體放電腔室容納一能量源且含有包括一準分子雷射氣體之一氣體混合物,該準分子雷射氣體包括一增益介質及氟。The device of claim 1, wherein each gas discharge chamber of the excimer gas discharge system contains an energy source and contains a gas mixture including an excimer laser gas, the excimer laser gas includes a gain medium and fluorine. 如請求項1之設備,其中: 該偵測設備進一步包含一量測容器,其流體地連接至該反應容器之該反應空腔且界定經組態以接收該新氣體混合物之一量測空腔;且 該水感測器經組態以感測該量測空腔中之該新氣體混合物內之水之一量。 Such as the equipment of request item 1, where: The detection device further includes a measurement vessel fluidly connected to the reaction cavity of the reaction vessel and defining a measurement cavity configured to receive the new gas mixture; and The water sensor is configured to sense an amount of water in the new gas mixture in the measurement cavity. 如請求項1之設備,其中該準分子氣體放電系統包括該等氣體放電腔室之複數者,且該偵測設備流體地連接至該複數個氣體放電腔室中之每一氣體放電腔室,其中該偵測設備包括複數個容器,每一容器界定容納該氫氧化物之一反應空腔,且每一容器流體地連接至該等氣體放電腔室中之一者且該偵測設備包括複數個水感測器,每一氧氣感測器均與一個容器相關聯。The device of claim 1, wherein the excimer gas discharge system includes a plurality of the gas discharge chambers, and the detection device is fluidly connected to each of the plurality of gas discharge chambers, wherein the detection device includes a plurality of containers, each container defines a reaction cavity containing the hydroxide, and each container is fluidly connected to one of the gas discharge chambers and the detection device includes a plurality of water sensors, each oxygen sensor is associated with a container. 如請求項1之設備,其中該準分子氣體放電系統包括該等氣體放電腔室之複數者,且該偵測設備流體地連接至該複數個氣體放電腔室中之每一氣體放電腔室,其中該偵測設備包括複數個容器,每一容器界定容納該氫氧化物之一反應空腔,且每一容器流體地連接至該等氣體放電腔室中之一者且該偵測設備包括與所有該等容器流體地連接之單個水感測器。The device of claim 1, wherein the excimer gas discharge system includes a plurality of the gas discharge chambers, and the detection device is fluidly connected to each of the plurality of gas discharge chambers, Wherein the detection device includes a plurality of containers, each container defines a reaction cavity containing the hydroxide, and each container is fluidly connected to one of the gas discharge chambers and the detection device includes and A single water sensor with all such containers fluidly connected. 如請求項1之設備,其中該混合氣體部分為該氣體放電腔室之一排出氣體且形成包括氧氣及水之該新氣體混合物之該經接收混合氣體之該氟與該氫氧化物間之該反應包含自該排出氣體移除氟。The device of claim 1, wherein the mixed gas portion is an exhaust gas of one of the gas discharge chambers and forms the new gas mixture including oxygen and water between the fluorine and the hydroxide of the received mixed gas. The reaction involves removing fluorine from the exhaust gas. 如請求項6之設備,其中該經移除之混合氣體部分中之氟之該濃度為約百萬分之500至2000。The equipment of claim 6, wherein the concentration of fluorine in the removed portion of the mixed gas is about 500 to 2000 parts per million. 如請求項1之設備,其中該氫氧化物包括一鹼土金屬氫氧化物。The device of claim 1, wherein the hydroxide includes an alkaline earth metal hydroxide. 如請求項1之設備,其中該氫氧化物缺少一鹼金屬及碳。Such as the equipment of claim 1, wherein the hydroxide lacks an alkali metal and carbon. 如請求項1之設備,其中該混合氣體為包含一增益介質與一緩衝氣體之至少一混合物之一準分子雷射氣體。The device of claim 1, wherein the mixed gas is an excimer laser gas including at least a mixture of a gain medium and a buffer gas. 如請求項1之設備,其中該氫氧化物包含氫氧化鈣,且該無機氟化物化合物包含氟化鈣。The device of claim 1, wherein the hydroxide includes calcium hydroxide, and the inorganic fluoride compound includes calcium fluoride. 如請求項1之設備,其中該控制系統經進一步組態以: 判定是否應基於該混合氣體中之氟之該經估計濃度而調整來自一氣體維持系統之一氣體供應系統的一氣體混合物中之氟之一濃度;及 將一信號發送至該氣體維持系統,指示該氣體維持系統在藉由利用一增益介質及一緩衝氣體以及氟之一混合物填充該氣體放電腔室而對該氣體放電腔室進行之一氣體更新期間調整自該氣體維持系統之該氣體供應系統供應至該氣體放電腔室之一氣體混合物中之氟之該相對濃度。 Such as the equipment of claim 1, wherein the control system is further configured to: determine whether a concentration of fluorine in a gas mixture from a gas supply system of a gas maintenance system should be adjusted based on the estimated concentration of fluorine in the gas mixture; and Send a signal to the gas maintenance system instructing the gas maintenance system during a gas refresh of the gas discharge chamber by filling the gas discharge chamber with a gain medium and a mixture of buffer gas and fluorine The relative concentration of fluorine in a gas mixture supplied to the gas discharge chamber from the gas supply system of the gas maintenance system is adjusted. 如請求項12之設備,其中一增益介質及一緩衝氣體以及氟之一混合物包含包括一稀有氣體及一鹵素之該增益介質及包括一惰性氣體之該緩衝氣體。The device of claim 12, wherein a mixture of a gain medium and a buffer gas and fluorine includes the gain medium including a rare gas and a halogen and the buffer gas including an inert gas. 如請求項13之設備,其中該稀有氣體包括氬氣、氪氣或氙氣;該鹵素包括氟;且該惰性氣體包括氦氣或氖氣。The device of claim 13, wherein the rare gas includes argon, krypton or xenon; the halogen includes fluorine; and the inert gas includes helium or neon.
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