TWI818842B - Die ejecting apparatus and die ejecting method - Google Patents

Abstract

The wafer ejection method of the present disclosure includes: a step of providing suction pressure to the adhesive layer through a wafer ejector; during the period of providing suction pressure to the adhesive layer, the wafer ejector moves relative to the adhesive layer, so that The step of overlapping the edge portion and the center portion of the wafer with the wafer ejector in sequence; and the step of providing injection pressure to the adhesive layer through the wafer ejector.

Description

Wafer ejection device and wafer ejection method

The technical idea of the present disclosure relates to a wafer ejection device and a wafer ejection method. More specifically, it relates to a wafer ejection device for separating a wafer from an adhesive layer and a wafer ejection method using the wafer ejection device.

To prevent separation of multiple wafers singulated during the dicing process, an adhesive layer can be adhered to one surface of the wafer. In addition, multiple wafers singulated through the cutting process can be separated from the adhesive layer by a wafer ejection device. Recently, as the thickness of the wafer adhered to the adhesive layer becomes thinner, research is being conducted on a wafer ejection device and a wafer ejection method that can easily separate the wafer from the adhesive layer while reducing the risk of wafer breakage. Actively proceed.

One of the problems to be solved by the technical idea of the present disclosure is to provide a wafer ejection device and a wafer ejection method that can easily separate the wafer from the adhesive layer.

One of the problems to be solved by the technical idea of the present disclosure is to provide a wafer ejection device and a wafer ejection method that can quickly separate the wafer from the adhesive layer.

In order to achieve the above object, as an exemplary embodiment of the present disclosure, a wafer ejection method is provided for separating a wafer from an adhesive layer, including the following steps: arranging the adhesive layer on a wafer ejector, so that The central part of the wafer is horizontally spaced apart from the wafer ejector; suction pressure is provided to the adhesive layer through the wafer ejector; and the wafer ejector is relatively moved toward a first direction relative to the adhesive layer , causing a first edge portion, a central portion and a second edge portion opposite to the first edge portion of the wafer to overlap with the wafer ejector in the vertical direction; positioning the wafer ejector relative to the bonding device The layer moves toward a second direction opposite to the first direction to align the wafer and the wafer ejector; and, spray pressure is provided to the adhesive layer through the wafer ejector.

In addition, as an exemplary embodiment of the present disclosure, a wafer ejection method is provided for separating a wafer from an adhesive layer, including the following steps: providing suction pressure to the adhesive layer through a wafer ejector; While the adhesive layer provides suction pressure, the wafer ejector is relatively moved relative to the adhesive layer so that the edge portion and the center portion of the wafer overlap with the wafer ejector in sequence; The adhesive layer provides the spray pressure.

In addition, as an exemplary embodiment of the present disclosure, a wafer ejection device is provided to separate a wafer from an adhesive layer, including: a housing disposed under the adhesive layer, the housing providing an internal space; a wafer ejector disposed in the internal space of the housing and providing at least one of a suction pressure and an ejection pressure to the adhesive layer; a pressure regulating device connected to the wafer ejector, and Adjust at least one of a pressure type and a strength provided by the wafer ejector to the adhesive layer; a wafer ejector driving device to move the wafer ejector in a horizontal direction; a lifting member configured on the wafer ejector In the internal space of the housing, a portion of the adhesive layer is disposed below the adhesive layer to support the adhesive layer; a lifting member driving device is connected to the lifting member to move the lifting member in the vertical direction; and a controller, With the pressure regulating device and the wafer ejector drive The device is connected to the lifting member driving device, and the controller controls the pressure regulating device to provide the suction pressure to the adhesive layer. In the state of providing the suction pressure to the adhesive layer, the controller controls the wafer top The wafer ejector is driven by an ejector driving device to move the wafer ejector in the horizontal direction, so that an edge portion and a central portion of the wafer pass through the wafer ejector in sequence. In a state where the wafer and the wafer ejector are aligned, The controller controls the pressure regulating device to provide spray pressure to the adhesive layer.

10: Wafer ejection device

110: Shell

120:wafer ejector

130: Pressure regulating device

140: Wafer ejector driving device

150:Lifting component

160: Lifting member driving device

170: Carrier stage

180: Stage drive device

190: Bonding head

200:Controller

AL: adhesive layer

D:pink

D_c: Center part

D_e1: first edge part

D_e2: second edge part

S100: Wafer ejection method

S1100~S1700: steps

S1300a_I, S1300b_I, S1300c_I: steps

S1300a_II, S1300b_II, S1300c_II: steps

S1400_I, S1400_II: steps

S200: Wafer ejection method

S2100~S2700: steps

[Fig. 1] is a cross-sectional view of a wafer ejection device according to an exemplary embodiment of the present disclosure.

[Fig. 2] is a signal flow diagram of the wafer ejection device according to an exemplary embodiment of the present disclosure.

[Fig. 3] is a flowchart showing the step flow of the wafer ejection method according to the exemplary embodiment of the present disclosure.

[FIG. 4] to [FIG. 11] are diagrams showing respective steps of the wafer ejection method according to the exemplary embodiment of the present disclosure.

[Fig. 12] is a flowchart showing the step flow of the wafer ejection method according to the exemplary embodiment of the present disclosure.

[FIG. 13] to [FIG. 19] are diagrams showing respective steps of the wafer ejection method according to the exemplary embodiment of the present disclosure.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view of a wafer ejection device 10 according to an exemplary embodiment of the present disclosure. In addition, FIG. 2 is a signal flow diagram of the wafer ejection device 10 according to an exemplary embodiment of the present disclosure.

Referring to FIGS. 1 and 2 simultaneously, the wafer ejection device 10 according to the exemplary embodiment of the present disclosure may include a housing 110 , a wafer ejector 120 , a pressure regulating device 130 , a wafer ejector driving device 140 , and a lifting device 130 . The lowering member 150, the lifting member driving device 160, the stage 170, the stage driving device 180, the bonding head 190, the controller 200, and the like.

The wafer ejection device 10 of the exemplary embodiment of the present disclosure is a device that separates a plurality of wafers D that are singulated in a sawing process from the adhesive layer AL.

Recently, as the thickness of the wafer D adhered to the adhesive layer AL gradually becomes thinner, there is a need for a wafer ejection device that can easily and quickly separate the wafer D from the adhesive layer AL while reducing the risk of damage to the wafer D.

Hereinafter, the horizontal direction may be defined as a direction parallel to the direction in which the adhesive layer AL extends (for example, a direction parallel to the direction in which the X-Y plane extends), and the vertical direction may be defined as a direction perpendicular to the direction in which the adhesive layer AL extends (for example, a direction parallel to the direction in which the X-Y plane extends). direction parallel to the Z direction).

The housing 110 is disposed under the adhesive layer AL and can provide an internal space for arranging the wafer ejector 120 and the lifting member 150 described later.

In an exemplary embodiment, the area of the upper surface of the housing 110 may be set larger than the area of the wafer D. Thereby, the wafer D can be placed on the upper surface of the housing 110 .

The wafer ejector 120 is disposed in the internal space of the housing 110, and can provide at least any one of a suction pressure and an ejection pressure to a portion of the adhesive layer AL exposed to the wafer ejector 120 to separate the wafer D with the wafer ejector 120. The adhesive layer AL separates.

The suction pressure may be a pressure for moving the adhesive layer AL exposed to the wafer ejector 120 downward, and the ejection pressure may be a pressure for moving the adhesive layer AL exposed to the wafer ejector 120 upward.

In an exemplary embodiment, wafer ejector 120 may include a conduit that provides a path for air ejected or drawn from pressure regulating device 130 .

In addition, when the wafer ejector 120 is viewed from a planar angle, the wafer ejector 120 may have a ring shape having holes. The shape of the hole of the wafer ejector 120 may be set to correspond to the shape of the wafer D. For example, when the wafer D has a square shape, the shape of the hole of the wafer ejector 120 may be set to a square shape. However, the shape of the hole of the wafer ejector 120 is not limited to the above.

That is, the wafer ejector 120 may provide at least one of the suction pressure and the ejection pressure to a portion of the adhesive layer AL exposed by the hole of the wafer ejector 120 .

The pressure adjusting device 130 is connected to the wafer ejector 120 and adjusts at least one of the pressure type and pressure intensity provided by the wafer ejector 120 to the adhesive layer AL.

In an exemplary embodiment, the pressure regulating device 130 may include at least any one of a pressure pump, a pressure reduction pump, a pressure line, a pressure reduction line, a pressure valve, and a pressure reduction valve to control the wafer ejector 120 to provide Give the pressure type and pressure intensity to the adhesive layer AL.

In an exemplary embodiment, the pressure regulating device 130 can control the air flow inside the wafer ejector 120 so that the wafer ejector 120 provides either a suction pressure or an ejection pressure to the adhesive layer AL.

For example, the pressure regulating device 130 can operate a pressure reducing pump and a pressure reducing valve so that air remaining in the pressure reducing line can be discharged to the outside, so that the wafer ejector 120 provides suction pressure to the adhesive layer AL. In addition, the pressure regulating device 130 can operate the pressure pump and the pressure valve so that air can flow into the pressure line, so that the wafer ejector 120 provides injection pressure to the adhesive layer AL.

The wafer ejector driving device 140 is connected to at least any one of the wafer ejector 120 and the housing 110 to move the wafer ejector 120 in a horizontal direction (for example, the direction in which the X-Y plane extends).

In an exemplary embodiment, the wafer ejector drive device 140 may include a motor and a switching device. For example, the wafer ejector driving device 140 may include a linear actuator that converts the rotational force of the motor into a linear motion of the wafer ejector 120 in the horizontal direction. For example, the conversion device may include a rack and pinion.

Since the wafer ejector 120 can move in the horizontal direction by the wafer ejector driving device 140, alignment can be performed between the wafer D and the wafer ejector 120. In addition, the wafer ejector 120 can provide suction pressure and ejection pressure to the adhesive layer AL arranged under the plurality of wafers D while moving in the horizontal direction. Thereby, the plurality of wafers D can be separated from the adhesive layer AL in sequence.

The lifting member 150 is arranged in the internal space of the housing 110 and supports a part of the adhesive layer AL arranged at the lower part of the wafer D based on movement in the vertical direction. In an exemplary embodiment, the lifting member 150 may be a lifting pin that moves in a vertical direction to support a portion of the adhesive layer AL.

The lifting member driving device 160 is connected to the lifting member 150 to move the lifting member 150 in a vertical direction (for example, the direction in which the Z-axis extends).

In an exemplary embodiment, the lifting member driving device 160 may include an electric motor and a conversion device. For example, the lifting member driving device 160 may include a linear actuator that converts the rotational force of the motor into linear motion of the lifting member 150 in the vertical direction. For example, the conversion device may include a rack and pinion.

The stage 170 is arranged outside the housing 110 and can support the adhesive layer AL to which the wafer D is adhered. In addition, the stage 170 can be moved in the horizontal direction by the stage driving device 180 while supporting the adhesive layer AL to which the wafer D is adhered.

The stage driving device 180 is connected to the stage 170 to move the stage 170 in the horizontal direction (for example, the direction in which the X-Y plane extends).

In an exemplary embodiment, the stage drive device 180 may include a motor and a conversion device. For example, the stage driving device 180 may include a linear actuator that converts the rotational force of the motor into a linear motion of the stage 170 in the horizontal direction.

The bonding head 190 is disposed above the wafer ejector 120 and picks up the wafer D from the bonding layer AL.

In an exemplary embodiment, the bonding head 190 may bond the wafer D separated from the bonding layer AL to the substrate disposed on the operating table after picking up the wafer D. The substrate may be a wafer or a printed circuit board (PCB). However, the type of the substrate is not limited to the above.

In an exemplary embodiment, the bonding head 190 may pick up the wafer D from the adhesive layer AL by providing vacuum pressure to an upper surface of the wafer D, and may adhere the picked wafer D to the substrate.

The controller 200 comprehensively controls the actions of the wafer ejection device 10 . The controller 200 is connected to the pressure regulating device 130 , the wafer ejector driving device 140 , the lifting member driving device 160 and the stage driving device 180 , and can control the pressure regulating device 130 , the wafer ejector driving device 140 , the lifting member 160 and the stage driving device 180 . At least one of the component driving device 160 and the stage driving device 180 .

In an exemplary embodiment, the controller 200 may be implemented by hardware, firmware, software, or any combination thereof. For example, the controller 200 may be a workstation computer, a desktop computer, a notebook computer, a tablet computer, or other computing device. The controller 200 may also be a processor, dedicated hardware or firmware composed of a simple controller, a complex processor such as a microprocessor, a CPU, or a GPU, or software. The controller 200 may be, for example, a general-purpose computer or a digital signal processor (Digital Signal Process, DSP), a field programmable gate array (Field Programmable Gate Array, FPGA), and an application specific integrated circuit (Application Specific Integrated Circuit, ASIC). Wait for application-specific hardware to be implemented.

In an exemplary embodiment, operations of controller 200 may be implemented by instructions stored on a machine-readable medium, which may be read and executed by more than one processor. Here, machine-readable media may include any mechanism that stores and/or transmits information in a form readable by a machine (eg, a computing device). For example, machine-readable media may include read only memory (ROM), random access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, electronics, Optical, acoustic or other forms of propagated signals (e.g. carrier waves, infrared signals, digital signals, etc.) and any other signals.

The controller 200 can be implemented through firmware, software, routines and instructions for operating the wafer ejection device 10 . For example, the controller 200 may be implemented by software that receives data for feedback, generates signals for operating the wafer ejection device 10, and performs predetermined operations.

In an exemplary embodiment, the controller 200 may control the pressure adjustment device 130 to adjust the pressure type and pressure intensity provided by the wafer ejector 120 to the adhesive layer AL.

In an exemplary embodiment, the controller 200 may control the pressure adjustment device 130 so that the wafer ejector 120 provides suction pressure to the adhesive layer AL. In addition, the controller 200 may control the pressure adjustment device 130 to adjust the intensity of the suction pressure provided by the wafer ejector 120 to the adhesive layer AL.

In addition, the controller 200 may control the pressure adjustment device 130 so that the wafer ejector 120 provides ejection pressure to the adhesive layer AL. In addition, the controller 200 may control the pressure adjustment device 130 to adjust the intensity of the ejection pressure provided by the wafer ejector 120 to the adhesive layer AL.

In an exemplary embodiment, the controller 200 may control the wafer ejector driving device 140 to move the wafer ejector 120 in the horizontal direction. For example, the controller 200 may control the wafer ejector driving device 140 to move the wafer ejector 120 in the horizontal direction so that the center portion of the wafer D and the center of the wafer ejector 120 overlap in the horizontal direction.

In an exemplary embodiment, the controller 200 may control the lifting member driving device 160 to move the lifting member 150 in the vertical direction.

In addition, in an exemplary embodiment, the controller 200 may control the stage driving device 180 to move the stage 170 in the horizontal direction. For example, the controller 200 may move the stage 170 by controlling the stage driving device 180 so that the center portion of the wafer D and the center of the wafer ejector 120 overlap in the horizontal direction.

In an exemplary embodiment, the controller 200 may control at least any one of the wafer ejector driving device 140 and the stage driving device 180 . For example, the controller 200 may control the wafer ejector drive 140 but not the stage drive 180 . In addition, the controller 200 may not control the wafer ejector driving device 140 but may control the stage driving device 180 . However, it is not limited thereto, and the controller 200 may control the wafer ejector driving device 140 and the stage driving device 180 .

In an exemplary embodiment, the controller 200 may control the pressure adjustment device 130 to provide suction pressure to the adhesive layer AL. In addition, before the controller 200 controls the pressure adjusting device 130 to provide the suction pressure to the adhesive layer AL, the controller 200 controls at least one of the wafer ejector driving device 140 and the stage driving device 180 so that the center portion of the wafer D is aligned with the The centers of the wafer ejector 120 are spaced apart in the horizontal direction.

In addition, while the suction pressure is provided to the adhesive layer AL, the controller 200 can control the wafer ejector driving device 140 to move the wafer ejector 120 in the horizontal direction, so that the edge portion and the center portion of the wafer D are sequentially Pass through the center of the wafer ejector 120 .

However, it is not limited to this. In a state where the suction pressure is provided to the adhesive layer AL, the controller 200 controls the stage driving device 180 to move the stage 170 in the horizontal direction, so that the edge portion of the wafer D The divided and central portions pass through the center of the wafer ejector 120 in sequence. Thereby, the adhesive force between the wafer D and the adhesive layer AL can be weakened for the first time.

In an exemplary embodiment, after the edge portion and the center portion of the wafer D pass through the center of the wafer ejector 120 in sequence, the controller 200 may control at least any one of the wafer ejector driving device 140 and the stage driving device 180 , so that the center portion of the wafer D and the center of the wafer ejector 120 overlap in the vertical direction. That is, the controller 200 can align the wafer D and the wafer ejector 120 by controlling at least one of the wafer ejector driving device 140 and the stage driving device 180 .

In an exemplary embodiment, in a state where the wafer D and the wafer ejector 120 are aligned, the controller 200 may control the lifting member driving device 160 so that the adhesive layer AL disposed under the edge portion of the wafer D passes through the lifting member. 150 moves up. In addition, when the lifting member 150 moves upward so that the lifting member 150 supports a part of the adhesive layer AL, the controller 200 may control the pressure regulating device 130 to continue to provide suction pressure to the adhesive layer AL.

In addition, in an exemplary embodiment, when the wafer D and the wafer ejector 120 are aligned, the controller 200 may control the pressure adjustment device 130 to provide injection pressure to the adhesive layer AL.

During the period when the wafer ejector 120 provides suction pressure to the lower part of the adhesive layer AL, the wafer ejector 10 of the exemplary embodiment of the present disclosure relatively moves the wafer ejector 120 in the horizontal direction relative to the adhesive layer AL, so that the wafer ejector 120 moves relatively in the horizontal direction. The edge portion and the center portion of the wafer D pass through the center of the wafer ejector 120 in sequence. Thus, the wafer ejection device 10 can separate the wafer D and the adhesive layer AL for the first time.

In addition, after the wafer ejection device 10 separates the wafer D and the adhesive layer AL for the first time, it provides injection pressure to the lower part of the adhesive layer AL to separate the wafer D and the adhesive layer AL for the second time.

Therefore, the wafer ejection device 10 of the present disclosure can easily separate the wafer D from the adhesive layer AL.

FIG. 3 is a flowchart illustrating the step flow of the wafer ejection method S100 according to an exemplary embodiment of the present disclosure. In addition, FIGS. 4 to 11 are diagrams illustrating various steps of the wafer ejection method S100 according to an exemplary embodiment of the present disclosure.

The wafer ejection method S100 according to an exemplary embodiment of the present disclosure will be described below with reference to FIGS. 3 to 11 . Referring to FIG. 3 , the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include: step S1100 , disposing the adhesive layer AL on the wafer ejector 120 so that the central portion D_c of the wafer D is in contact with the wafer ejector 120 . separated in the horizontal direction; step S1200, provide suction pressure to the adhesive layer AL through the wafer ejector 120; step S1300, the wafer ejector 120 moves relatively to the first direction relative to the adhesive layer AL, so that the first The edge portion D_e1, the center portion D_c and the second edge portion D_e2 sequentially overlap with the wafer ejector 120 in the vertical direction; step S1400, the wafer ejector 120 moves relatively to the second direction relative to the adhesive layer AL, so that the wafer D and The wafer ejector 120 is aligned; step S1500, move a part of the adhesive layer AL upward through the vertical movement of the lifting member 150; step S1600, provide injection pressure to the adhesive layer AL through the wafer ejector 120; and step S1700, by The bonding head 190 disposed on the wafer ejector 120 picks up the wafer D from the bonding layer AL.

Referring to FIGS. 3 and 4 simultaneously, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include: step S1100, disposing the adhesive layer AL on the wafer ejector 120 so that the central portion D_c of the wafer D is in contact with the wafer ejector 120. The extractors 120 are spaced horizontally.

Hereinafter, the first edge portion D_e1 of the wafer D may be a portion of the edge of the wafer D adjacent to the center of the wafer ejector 120 , and the second edge portion D_e2 may be the portion of the wafer opposite to the first edge portion D_e1 part of the edge of D. In addition, the center portion D_c of the wafer D may be a portion of the wafer D disposed between the first edge portion D_e1 and the second edge portion D_e2.

Referring to FIGS. 3 and 5 simultaneously, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include step S1200 of providing suction pressure to the adhesive layer AL through the wafer ejector 120 .

In step S1200, the controller 200 (FIG. 2) may control the pressure adjustment device 130 so that the wafer ejector 120 provides suction pressure to the adhesive layer AL. In addition, in step S1200, the controller 200 may control the pressure adjustment device 130 to adjust the intensity of the suction pressure. For example, in step S1200, the controller 200 receives a signal related to the intensity of the suction pressure from a sensor (not shown), and controls the pressure adjustment device 130 based on the signal, so that the intensity of the suction pressure can be adjusted in real time.

3 and 6a to 6c, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include: step S1300, the wafer ejector 120 moves relatively to the first direction relative to the adhesive layer AL, so that the wafer D The first edge portion D_e1, the center portion D_c and the second edge portion D_e2 are sequentially overlapped with the wafer ejector 120 in the vertical direction.

That is, step S1300 may be that the wafer ejector 120 moves relatively to the first direction relative to the adhesive layer AL, so that the first edge part D_e1, the center part D_c and the second edge part D_e2 of the wafer D pass through the wafer ejector in sequence. 120 steps in center.

Step S1300 may include: step S1300a_I, the wafer ejector 120 moves in the horizontal direction through the wafer ejector driving device 140, so that the first edge portion D_e1 of the wafer D overlaps the wafer ejector 120 in the vertical direction; step S1300b_I, The wafer ejector 120 moves in the horizontal direction through the wafer ejector driving device 140, so that the central portion D_c of the wafer D overlaps the wafer ejector 120 in the vertical direction; and step S1300c_1, the wafer ejector 120 moves through the wafer ejector 120 in the vertical direction. The ejector driving device 140 moves in the horizontal direction so that the second edge portion D_e2 of the wafer D overlaps the wafer ejector 120 in the vertical direction. In steps S1300a_I to S1300c_I, the stage 170 supporting the adhesive layer AL may be fixed.

That is, in step S1300, while providing suction pressure to the lower part of the adhesive layer AL, the wafer ejector 120 moves in the horizontal direction, so that the wafer D and the adhesive layer AL can be separated for the first time. As the wafer ejector 120 moves in the horizontal direction, the first edge portion D_e1, the center portion D_c, and the second edge portion D_e2 of the wafer D may be separated from the adhesive layer AL for the first time in sequence.

3 and 7a to 7c, step S1300 may include: step S1300a_II, the stage 170 moves in the horizontal direction through the stage driving device 180, so that the first edge portion D_e1 of the wafer D is in a vertical position with the wafer ejector 120. overlap in the direction; step S1300b_II, the stage 170 moves in the horizontal direction through the stage driving device 180, so that the central portion D_c of the wafer D overlaps the wafer ejector 120 in the vertical direction; and step S1300c_II, the stage 170 passes through the stage The driving device 180 moves in the horizontal direction so that the second edge portion D_e2 of the wafer D overlaps the wafer ejector 120 in the vertical direction. In steps S1300a_II to S1300c_II, the wafer ejector 120 may be fixed.

That is, in step S1300, the stage 170 moves in the horizontal direction while providing suction pressure to the lower part of the adhesive layer AL, so that the wafer D and the adhesive layer AL can be separated for the first time. As the stage 170 moves in the horizontal direction, the first edge portion D_e1, the center portion D_c, and the second edge portion D_e2 of the wafer D may be separated from the adhesive layer AL for the first time in sequence.

Referring to FIGS. 3 and 8A simultaneously, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include: step S1400, the wafer ejector 120 moves relative to the adhesive layer AL in a second direction opposite to the first direction, The wafer D and the wafer ejector 120 are aligned.

In an exemplary embodiment, step S1400 may include: step S1400_I, the wafer ejector 120 moves in the horizontal direction through the wafer ejector driving device 140, so that the central portion D_c of the wafer D is in the vertical direction with the wafer ejector 120 overlap. The moving direction of the wafer ejector 120 in step S1400_I That is, the second direction may be a direction opposite to the moving direction of the wafer ejector 120 in steps S1300a_I to S1300c_I, that is, the first direction.

In an exemplary embodiment, during step S1400, the wafer ejector 120 may continue to provide suction pressure to the central portion D_c of the wafer D through the pressure adjusting device 130. Thereby, the center portion D_c of the wafer D can be separated from the adhesive layer AL.

However, it is not limited thereto. During the execution of step S1400, since the operation of the pressure regulating device 130 is interrupted, the wafer ejector 120 may not provide suction pressure to the central portion D_c of the wafer D.

3 and 8 b, step S1400 may include: step S1400_II, the stage 170 moves in the horizontal direction through the stage driving device 180, so that the central portion D_c of the wafer D overlaps the wafer ejector 120 in the vertical direction. The moving direction of the stage 170 in step S1400_II, that is, the second direction, may be the opposite direction to the direction of movement of the stage 170, that is, the first direction in steps S1300a_II to S1300c_II.

3 and 9 simultaneously, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include: step S1500, moving a part of the adhesive layer AL upward by moving the lifting member 150 in the vertical direction.

In an exemplary embodiment, step S1500 may include step S1500 of moving a part of the adhesive layer AL upward by moving the lifting member 150 in the vertical direction.

In an exemplary embodiment, in step S1500, the lifting member 150 may move upward through the lifting member driving device 160, so that the adhesive layer AL disposed at the lower portion of the first edge portion D_e1 and the second edge portion D_e2 of the wafer D moves upward. .

In an exemplary embodiment, during step S1500, the wafer ejector 120 may continue to provide suction pressure to the central portion D_c of the wafer D through the pressure adjusting device 130.

However, the step S1500 may also be omitted in the wafer ejection method S100 of the exemplary embodiment of the present disclosure.

Referring to FIGS. 3 and 10 simultaneously, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include step S1600 of providing injection pressure to the adhesive layer AL through the wafer ejector 120 .

In step S1600, the controller 200 (FIG. 2) may control the pressure adjustment device 130 so that the wafer ejector 120 provides injection pressure to the adhesive layer AL. In addition, in step S1600, the controller 200 may control the pressure adjustment device 130 to adjust the intensity of the injection pressure. For example, in step S1600, the controller 200 receives a signal related to the intensity of the injection pressure from a sensor (not shown), and controls the pressure adjustment device 130 based on the signal, so that the intensity of the injection pressure can be adjusted in real time.

By performing step S1600, the first edge portion D_e1 and the second edge portion D_e2 of the wafer D may be separated from the adhesive layer AL.

3 and 11 simultaneously, the wafer ejection method S100 according to the exemplary embodiment of the present disclosure may include: step S1700, picking up the wafer D from the adhesive layer AL through the bonding head 190 configured on the wafer ejector 120.

In step S1700, the bonding head 190 provides vacuum pressure to the upper surface of the wafer D so that the wafer D can be picked up from the bonding layer AL. In addition, the bonding head 190 can bond the picked wafer D to the substrate on the operating table. For example, the substrate may include a wafer or a printed circuit board (PCB).

In the wafer ejection method S100 of the exemplary embodiment of the present disclosure, while the wafer ejector 120 provides suction pressure to the lower part of the adhesive layer AL, the wafer ejector 120 can be relatively moved in the horizontal direction relative to the adhesive layer AL, So that the edge part and the center part of the wafer D pass through the center of the wafer ejector 120 in sequence. Therefore, the wafer ejection method S100 of the present disclosure can separate the wafer D and the adhesive layer AL for the first time.

In addition, after the wafer ejection method S100 of the present disclosure separates the wafer D and the adhesive layer AL for the first time, the injection pressure can be provided to the lower part of the adhesive layer AL to separate the wafer D and the adhesive layer AL for the second time.

Therefore, the wafer ejection method S100 of the present disclosure can easily separate the wafer D from the adhesive layer AL.

FIG. 12 is a flowchart illustrating the step flow of the wafer ejection method S200 according to an exemplary embodiment of the present disclosure. In addition, FIGS. 13 to 19 are diagrams illustrating various steps of the wafer ejection method S200 according to an exemplary embodiment of the present disclosure.

The wafer ejection method S200 according to an exemplary embodiment of the present disclosure will be described below with reference to FIGS. 12 to 19 .

Referring to FIG. 12 , the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include: step S2100 , disposing the adhesive layer AL on the wafer ejector 120 so that the central portion D_c of the wafer D is in contact with the wafer ejector 120 . separated in the horizontal direction; step S2200, provide suction pressure to the adhesive layer AL through the wafer ejector 120; step S2300, the wafer ejector 120 moves relative to the adhesive layer AL, so that the first edge portion D_e1 of the wafer D and The central part D_c overlaps with the wafer ejector 120 in sequence; step S2400, interrupt the movement of the wafer ejector 120 to align the wafer D and the wafer ejector 120; step S2500, move the lifting member 150 in the vertical direction to cause the bonding A part of the layer AL moves upward; step S2600, providing ejection pressure to the adhesive layer AL through the wafer ejector 120; and step S2700, picking up the wafer D from the adhesive layer AL through the bonding head 190 disposed on the wafer ejector 120.

Referring to FIGS. 12 and 13 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include: step S2100, disposing the adhesive layer AL on the wafer ejector 120 so that the central portion D_c of the wafer D is in contact with the wafer ejector 120. The extractors 120 are spaced horizontally.

As mentioned above, the first edge portion D_e1 of the wafer D may be a portion of the edge of the wafer D adjacent to the center of the wafer ejector 120, and the second edge portion D_e2 may be the opposite edge portion of the wafer D_e1 to the first edge portion D_e1. part of the edge of D. In addition, the center portion D_c of the wafer D may be a portion of the wafer D disposed between the first edge portion D_e1 and the second edge portion D_e2.

Referring to FIGS. 12 and 14 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include step S2200 of providing suction pressure to the adhesive layer AL through the wafer ejector 120 .

In step S2200, the controller 200 (FIG. 2) may control the pressure adjustment device 130 so that the wafer ejector 120 provides suction pressure to the adhesive layer AL. In addition, in step S2200, the controller 200 may control the pressure adjustment device 130 to adjust the intensity of the suction pressure. For example, in step S2200, the controller 200 receives a signal related to the intensity of the suction pressure from a sensor (not shown), and controls the pressure adjustment device 130 based on the signal, so that the intensity of the suction pressure can be adjusted in real time.

12 and 15 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include: step S2300, the wafer ejector 120 moves relatively with respect to the adhesive layer AL, so that the first edge portion D_e1 of the wafer D and The central portion D_c in turn overlaps the wafer ejector 120 in the vertical direction.

That is, step S2300 may be a step in which the wafer ejector 120 moves relative to the adhesive layer AL so that the first edge portion D_e1 and the central portion D_c of the wafer D pass through the center of the wafer ejector 120 in sequence.

In step S2300, while the stage 170 is fixed, the wafer ejector 120 can move in the horizontal direction through the wafer ejector driving device 140. However, it is not limited to this. In step S1300, while the wafer ejector 120 is fixed, the stage 170 can move in the horizontal direction through the stage driving device 180. In addition, in step S1300, the wafer ejector 120 and the stage 170 may also move simultaneously.

In step S2300, in a state where suction pressure is provided to the lower part of the adhesive layer AL, since the wafer ejector 120 can move relative to the adhesive layer AL, the wafer D can be separated from the adhesive layer AL for the first time. That is, as the wafer ejector 120 moves relatively along the horizontal direction, the first edge portion D_e1 and the central portion D_c of the wafer D may be separated from the adhesive layer AL for the first time in sequence.

12 and 16 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include: step S2400, interrupting the relative movement of the wafer ejector 120 with respect to the adhesive layer AL, so that the wafer D and the wafer ejector 120 Entire column.

In an exemplary embodiment, step S2400 may include a step of interrupting the relative movement of the wafer ejector 120 in the horizontal direction when the central portion D_c of the wafer D overlaps the wafer ejector 120 in the vertical direction. In other words, in step S2300, when the wafer ejector 120 moves in the first direction, in step S2400, the wafer ejector 120 can interrupt the movement in the first direction to align wafer D and the wafer ejector 120. .

12 and 17 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include: step S2500, moving a part of the adhesive layer AL upward by moving the lifting member 150 in the vertical direction.

In an exemplary embodiment, step S2500 may include: step S2500, moving a part of the adhesive layer AL upward by moving the lifting member 150 in the vertical direction.

In an exemplary embodiment, in step S2500, the lifting member 150 may move upward through the lifting member driving device 160, so that the adhesive layer AL disposed at the lower portion of the first edge portion D_e1 and the second edge portion D_e2 of the wafer D moves upward. .

In an exemplary embodiment, during step S2500, the wafer ejector 120 may continue to provide suction pressure to the central portion D_c of the wafer D through the pressure adjusting device 130.

However, the step S2500 may also be omitted in the wafer ejection method S200 according to the exemplary embodiment of the present disclosure.

Referring to FIGS. 12 and 18 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include step S2600 of providing injection pressure to the adhesive layer AL through the wafer ejector 120 .

In step S2600, the controller 200 (FIG. 2) may control the pressure adjustment device 130 so that the wafer ejector 120 provides injection pressure to the adhesive layer AL. In addition, in step S2600, the controller 200 may control the pressure adjustment device 130 to adjust the intensity of the injection pressure. For example, in step S2600, the controller 200 receives a signal related to the intensity of the injection pressure from a sensor (not shown), and controls the pressure adjustment device 130 based on the signal, so that the intensity of the injection pressure can be adjusted in real time.

By performing step S2600, the first edge portion D_e1 and the second edge portion D_e2 of the wafer D may be separated from the adhesive layer AL.

12 and 19 simultaneously, the wafer ejection method S200 according to the exemplary embodiment of the present disclosure may include: step S2600, picking up the wafer D from the adhesive layer AL through the bonding head 190 configured on the wafer ejector 120.

In step S2600, the bonding head 190 provides vacuum pressure to the upper surface of the wafer D so that the wafer D can be picked up from the bonding layer AL. In addition, the bonding head 190 can bond the picked wafer D to the substrate on the operating table. For example, the substrate may include a wafer or a printed circuit board (PCB).

In the wafer ejection method S200 of the exemplary embodiment of the present disclosure, while the wafer ejector 120 provides suction pressure to the lower part of the adhesive layer AL, the wafer ejector 120 can be relatively moved in the horizontal direction with respect to the adhesive layer AL, so as to The edge portion and the center portion of the wafer D are caused to pass through the center of the wafer ejector 120 in sequence. Therefore, the wafer ejection method S200 of the present disclosure can separate the wafer D and the adhesive layer AL for the first time.

In addition, after the wafer ejection method S200 of the present disclosure separates the wafer D and the adhesive layer AL for the first time, the injection pressure can be provided to the lower part of the adhesive layer AL to separate the wafer D and the adhesive layer AL for the second time.

Therefore, the wafer ejection method S200 of the present disclosure can easily separate the wafer D from the adhesive layer AL.

In addition, the wafer ejection method S200 of the exemplary embodiment of the present disclosure can provide suction pressure and ejection pressure to the adhesive layer AL while moving the wafer ejector 120 only in a specific direction (eg, +X direction), thereby Separate the wafer D from the adhesive layer AL. Therefore, the wafer ejection method S200 of the present disclosure can quickly separate the wafer D from the adhesive layer AL.

10: Wafer ejection device 110: Shell 120: Wafer ejector 130: Pressure regulating device 140: Wafer ejector driving device 150: Lifting component 160: Lifting member driving device 170: Carrier stage 180: Stage drive device 190: Bonding head AL: Adhesion layer D: chip

Claims (20)

A wafer ejection method used to separate a wafer from an adhesive layer, including the following steps: disposing the adhesive layer on a wafer ejector so that the central portion of the wafer is horizontally spaced apart from the wafer ejector; Provide suction pressure to the adhesive layer through the wafer ejector; The wafer ejector is relatively moved toward a first direction relative to the adhesive layer, so that a first edge portion, a center portion, and a second edge portion opposite to the first edge portion of the wafer are sequentially aligned in the vertical direction. Overlap with the wafer ejector; Move the wafer ejector relative to the adhesive layer toward a second direction opposite to the first direction to align the wafer and the wafer ejector; and Jet pressure is provided to the adhesive layer through the wafer ejector. The wafer ejection method according to claim 1, wherein the step of moving the wafer ejector relative to the adhesive layer toward the first direction further includes the following steps: with the adhesive layer fixed on a stage , the wafer ejector moves in the horizontal direction. The wafer ejection method according to claim 1, wherein the step of moving the wafer ejector relative to the adhesive layer toward the first direction further includes the following steps: in a state where the wafer ejector is fixed, supporting A carrier of the adhesive layer moves in a horizontal direction. The wafer ejection method according to claim 1, wherein before performing the step of providing the ejection pressure toward the adhesive layer through the wafer ejector, the method further includes the following steps: through a lifting member disposed at the lower part of the adhesive layer The movement in the vertical direction causes a portion of the adhesive layer disposed under the first edge portion and the second edge portion of the wafer to move upward. The wafer ejection method according to claim 4, wherein during the step of moving a portion of the adhesive layer upward through the lifting member, the wafer ejector pushes the adhesive layer disposed below the central portion of the wafer. layer provides suction pressure. The wafer ejection method of claim 1 further includes the following step: picking up the wafer from the adhesive layer through a bonding head disposed on the wafer ejector. The wafer ejection method of claim 1, wherein during the step of aligning the wafer and the wafer ejector, the wafer ejector provides suction pressure to the adhesive layer. The wafer ejection method of claim 1, wherein during the step of aligning the wafer and the wafer ejector, the wafer ejector interrupts providing suction pressure to the adhesive layer. A wafer ejection method used to separate a wafer from an adhesive layer, including the following steps: Provide suction pressure to the adhesive layer through a wafer ejector; During the period of providing the suction pressure to the adhesive layer, the wafer ejector is relatively moved relative to the adhesive layer so that an edge portion and a central portion of the wafer overlap with the wafer ejector in sequence; and A jet pressure is provided to the adhesive layer through the wafer ejector. The wafer ejection method as described in claim 9, further comprising the following steps: when the central part of the wafer overlaps the wafer ejector in the vertical direction, interrupting the relative movement of the wafer ejector, so that the wafer ejector In line with the wafer ejector, The step of providing the injection pressure to the adhesive layer through the wafer ejector is performed after the step of aligning the wafer and the wafer ejector. The wafer ejection method of claim 10, wherein during the step of aligning the wafer and the wafer ejector, the wafer ejector provides suction pressure to the adhesive layer. The wafer ejection method according to claim 9, wherein the step of relatively moving the wafer ejector relative to the adhesive layer further includes the following steps: with the adhesive layer fixed on a carrier, the wafer ejection The device moves in the horizontal direction. The wafer ejection method as described in claim 9, wherein the step of relatively moving the wafer ejector relative to the adhesive layer further includes the following steps: in a fixed state, a loader supporting the adhesive layer is provided. The stage moves in the horizontal direction. The wafer ejection method according to claim 9, wherein before performing the step of providing the injection pressure to the adhesive layer through the wafer ejector, it further includes the following steps: through a lifting member arranged at the lower part of the adhesive layer The movement in the vertical direction causes a part of the adhesive layer disposed under the edge portion of the wafer to move upward. The wafer ejection method of claim 9 further includes the following step: picking up the wafer from the adhesive layer through a bonding head disposed on the wafer ejector. A wafer ejection device that separates a wafer from an adhesive layer, including: A shell is arranged at the lower part of the adhesive layer, and the shell provides an internal space; a wafer ejector, disposed in the internal space of the housing, and providing at least one of a suction pressure and an ejection pressure to the adhesive layer; a pressure regulating device, connected to the wafer ejector, and adjusting at least any one of a pressure type and an intensity provided by the wafer ejector to the adhesive layer; a wafer ejector driving device to move the wafer ejector in a horizontal direction; a lifting member, arranged in the internal space of the housing, and arranged at the lower part of the adhesive layer to support a part of the adhesive layer; A lifting member driving device is connected to the lifting member to move the lifting member in the vertical direction; and A controller is connected to the pressure regulating device, the wafer ejector driving device and the lifting member driving device, the controller controls the pressure regulating device to provide the suction pressure to the adhesive layer, Wherein, in the state of providing the suction pressure to the adhesive layer, the controller controls the wafer ejector driving device to move the wafer ejector in the horizontal direction, so that an edge portion and a central portion of the wafer are sequentially After passing through the wafer ejector, In a state where the wafer and the wafer ejector are aligned, the controller controls the pressure regulating device to provide injection pressure to the adhesive layer. The wafer ejection device as described in claim 16 also includes: a carrier to support the adhesive layer; and A stage driving device is connected with the controller to move the stage in a horizontal direction. The wafer ejection device of claim 16, wherein when the lifting member moves in the vertical direction and supports a portion of the adhesive layer disposed under the edge portion of the wafer, the controller controls the pressure adjustment device to A portion of the adhesive layer disposed under the central portion of the wafer provides the suction pressure. The wafer ejection device of claim 16, wherein before providing the suction pressure to the adhesive layer through the pressure regulating device, the controller controls the wafer ejector driving device to make the central part of the wafer and the wafer The ejector is spaced apart in the horizontal direction. The wafer ejection device as claimed in claim 16, further comprising: a bonding head disposed on the wafer ejector for picking up the wafer from the bonding layer.