TWI818661B - Single crystal furnace - Google Patents

Single crystal furnace Download PDF

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TWI818661B
TWI818661B TW111129665A TW111129665A TWI818661B TW I818661 B TWI818661 B TW I818661B TW 111129665 A TW111129665 A TW 111129665A TW 111129665 A TW111129665 A TW 111129665A TW I818661 B TWI818661 B TW I818661B
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exhaust pipe
crucible
furnace body
silicon melt
away
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TW111129665A
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TW202246600A (en
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全弘湧
吳永林
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大陸商西安奕斯偉材料科技股份有限公司
大陸商西安奕斯偉矽片技術有限公司
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本發明關於一種單晶爐,包括爐體,該爐體限定的腔室內設置有坩堝,該爐體的底部設置有與排氣管連通的排氣口,該排氣口上設置有防止坩堝洩露的矽熔體進入該排氣口的第一防護結構。The invention relates to a single crystal furnace, which includes a furnace body. A crucible is provided in a cavity defined by the furnace body. An exhaust port connected to an exhaust pipe is provided at the bottom of the furnace body. The exhaust port is provided with a device to prevent leakage of the crucible. The silicon melt enters the first protective structure of the exhaust port.

Description

單晶爐Single crystal furnace

本發明屬於矽片產品製作技術領域,尤其關於一種單晶爐。The invention belongs to the technical field of silicon wafer product production, and particularly relates to a single crystal furnace.

生產單晶晶棒時,在石英坩堝內裝入多晶矽,然後熔化多晶矽,熔液溫度穩定,再使籽晶與熔液接觸的方式生長晶棒的方法被廣泛使用。將多晶矽進行熔融過程中,多晶矽突然發生下陷,或側傾,或者晶棒生長過程中由於技術不穩定,導致晶棒墜落時對石英坩堝造成衝擊,因此導致石英坩堝發生產生裂痕,導致石英坩堝內部矽熔體洩漏的事故時有發生。如果矽熔體洩漏,設備下部隔熱材料、排氣口管道、crucible Mechanism(坩堝機械結構)將發生嚴重損傷。When producing single crystal ingots, the method of filling polycrystalline silicon into a quartz crucible, then melting the polycrystalline silicon, stabilizing the temperature of the melt, and then growing the ingot by bringing the seed crystal into contact with the melt is widely used. During the melting process of polycrystalline silicon, the polycrystalline silicon suddenly sinks or tilts sideways, or due to technical instability during the crystal rod growth process, the crystal rod falls and impacts the quartz crucible, thus causing cracks in the quartz crucible and causing cracks inside the quartz crucible. Accidents of silicon melt leakage occur from time to time. If the silicon melt leaks, the insulation material at the bottom of the equipment, the exhaust pipe, and the crucible mechanism will be seriously damaged.

為了解決上述技術問題,本發明提供一種單晶爐,解決矽熔體洩露導致的晶棒生產部件的損傷等問題。In order to solve the above technical problems, the present invention provides a single crystal furnace to solve problems such as damage to crystal ingot production components caused by leakage of silicon melt.

為了達到上述目的,本發明實施例採用的技術方案是:一種單晶爐,包括爐體,該爐體限定的腔室內設置有坩堝,該爐體的底部設置有與排氣管連通的排氣口,該排氣口上設置有防止坩堝洩露的矽熔體進入該排氣口的第一防護結構。In order to achieve the above object, the technical solution adopted in the embodiment of the present invention is: a single crystal furnace, including a furnace body, a crucible is provided in a cavity defined by the furnace body, and an exhaust gas connected to the exhaust pipe is provided at the bottom of the furnace body. The exhaust port is provided with a first protective structure to prevent the leaked silicon melt from the crucible from entering the exhaust port.

可選的,該第一防護結構包括套設於該排氣口上的延伸套筒。Optionally, the first protective structure includes an extension sleeve sleeved on the exhaust port.

可選的,該延伸套筒遠離該排氣口的一端設置有向外延伸的凸緣。Optionally, an end of the extension sleeve away from the exhaust port is provided with an outwardly extending flange.

可選的,該延伸套筒為可伸縮的套筒。Optionally, the extension sleeve is a telescopic sleeve.

可選的,該排氣管的內壁上設置有減緩矽熔體流速的緩衝結構。Optionally, the inner wall of the exhaust pipe is provided with a buffer structure that slows down the flow rate of the silicon melt.

可選的,該緩衝結構包括沿該排氣管的延伸方向間隔且交錯設置於該排氣管的內壁上的多個阻擋板,多個該阻擋板包括在該排氣管的延伸方向上相鄰的第一擋板和第二擋板,該第一擋板在該排氣管的延伸方向上的正投影,與該第二擋板在該排氣管的延伸方向上的正投影部分重疊。Optionally, the buffer structure includes a plurality of baffle plates spaced and staggered along the extension direction of the exhaust pipe, and a plurality of the baffle plates are included in the extension direction of the exhaust pipe. The adjacent first baffle and the second baffle, the orthographic projection of the first baffle in the extension direction of the exhaust pipe, and the orthographic projection of the second baffle in the extension direction of the exhaust pipe overlap.

可選的,沿著該排氣管的延伸方向,多個該阻擋板呈螺旋狀環繞排布於該排氣管的內壁上。Optionally, along the extension direction of the exhaust pipe, a plurality of the baffle plates are arranged in a spiral shape around the inner wall of the exhaust pipe.

可選的,該阻擋板遠離該排氣管內壁的一端向靠近該排氣口的方向傾斜延伸設置。Optionally, the end of the baffle plate away from the inner wall of the exhaust pipe is inclined and extended in a direction close to the exhaust port.

可選的,該爐體的底部的中心穿設有坩堝軸,該坩堝軸遠離該爐體的底部的一端固定有該坩堝,該坩堝軸上套設有防止該坩堝洩露的矽熔體流入該爐體的底部遠離該坩堝的一側的第二防護結構。Optionally, a crucible shaft is passed through the center of the bottom of the furnace body. The crucible is fixed on one end of the crucible shaft away from the bottom of the furnace body. The crucible shaft is covered with a sleeve to prevent the silicon melt from leaking from flowing into the furnace body. The bottom of the furnace body is a second protective structure on one side away from the crucible.

可選的,該第二防護結構包括套設於該坩堝軸的外側的防護套,該防護套包括靠近該爐體的底部的第一部分和遠離該爐體的底部的第二部分,該第二部分的內壁與該坩堝軸緊密接觸,該第二部分的外壁為作為導向面的曲面結構,該第二部分遠離該第一部分的一端的端面的面積小於該第二部分靠近該第一部分的一端的端面的面積。Optionally, the second protective structure includes a protective sleeve placed on the outside of the crucible shaft. The protective sleeve includes a first part close to the bottom of the furnace body and a second part far away from the bottom of the furnace body. The second part The inner wall of the second part is in close contact with the crucible shaft. The outer wall of the second part is a curved structure serving as a guide surface. The area of the end surface of the second part away from the first part is smaller than the end of the second part close to the first part. The area of the end face.

可選的,該第一部分為可伸縮結構。Optionally, the first part is a scalable structure.

本發明的有益效果是:通過該第一防護結構的設置,防止洩露的矽熔體進入到排氣管中。The beneficial effect of the present invention is: through the arrangement of the first protective structure, leaked silicon melt is prevented from entering the exhaust pipe.

為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效,茲將本發明配合附圖及附件,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍,合先敘明。In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.

在本發明實施例的描述中,需要理解的是,術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“豎直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明實施例和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" ", "horizontal", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience and simplicity in describing the embodiments of the present invention. The description does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore is not to be construed as a limitation of the invention.

此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中,“多個”的含義是兩個或兩個以上,除非另有明確具體的限定。In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.

在本發明實施例中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言,可以根據具體情況理解上述術語在本發明實施例中的具體含義。In the embodiments of the present invention, unless otherwise expressly stipulated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a removable connection. Disassembly and connection, or integration; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

參考圖1,矽熔體100洩露,大部分矽熔體100流入坩堝軸40、排氣管2,對排氣管2、以及位於坩堝軸40下方的機械結構造成損害。Referring to FIG. 1 , the silicon melt 100 leaks, and most of the silicon melt 100 flows into the crucible shaft 40 and the exhaust pipe 2 , causing damage to the exhaust pipe 2 and the mechanical structure located below the crucible shaft 40 .

參考圖2,針對上述問題,本實施例提供一種單晶爐,包括爐體10,該爐體10限定的腔室20內設置有坩堝30,該爐體10的底部設置有與排氣管2連通的排氣口,該排氣口上設置有防止坩堝30洩露的矽熔體進入該排氣口的第一防護結構50。Referring to Figure 2, to address the above problems, this embodiment provides a single crystal furnace, which includes a furnace body 10. A crucible 30 is provided in a chamber 20 defined by the furnace body 10, and an exhaust pipe 2 is provided at the bottom of the furnace body 10. A connected exhaust port is provided with a first protective structure 50 to prevent silicon melt leaked from the crucible 30 from entering the exhaust port.

若矽熔體洩露,大部分流入排氣口,並流入排氣管2,從而對排氣管2造成損傷,該第一防護結構50的設置,防止矽熔體進入該排氣口,從而對排氣管2起到保護作用。If the silicon melt leaks, most of it will flow into the exhaust port and into the exhaust pipe 2, thereby causing damage to the exhaust pipe 2. The first protective structure 50 is provided to prevent the silicon melt from entering the exhaust port, thereby causing damage to the exhaust pipe 2. The exhaust pipe 2 plays a protective role.

該第一防護結構50的具體結構形式可以有多種,只要可以防止矽熔體進入到排氣口即可,本實施例的一些實施方式中,該第一防護結構50包括套設於該排氣口上的延伸套筒。The first protective structure 50 can have a variety of specific structural forms, as long as it can prevent the silicon melt from entering the exhaust port. In some implementations of this embodiment, the first protective structure 50 includes a structure that is sleeved on the exhaust port. Extension sleeve over the mouth.

該延伸套筒的設置增加了該排氣口的高度,若發生矽熔體洩露,由於該延伸套筒的設置,阻止了矽熔體流入該排氣口內。The arrangement of the extension sleeve increases the height of the exhaust port. If the silicon melt leaks, the arrangement of the extension sleeve prevents the silicon melt from flowing into the exhaust port.

示例性的,該延伸套筒和該排氣口的邊緣為一體結構,增加該延伸套筒和該排氣口之間的密封性。For example, the edge of the extension sleeve and the exhaust port is an integral structure, which increases the sealing between the extension sleeve and the exhaust port.

本實施例的一些實施方式中,為了進一步的有效的防止矽熔體流入該排氣口,該延伸套筒遠離該排氣口的一端設置有向外延伸的凸緣51。In some implementations of this embodiment, in order to further effectively prevent the silicon melt from flowing into the exhaust port, an outwardly extending flange 51 is provided at one end of the extension sleeve away from the exhaust port.

本實施例的一些實施方式中,該延伸套筒為可伸縮的套筒。In some implementations of this embodiment, the extension sleeve is a telescopic sleeve.

不同的階段產生矽熔體洩露,洩露的矽熔體的體積不同,不同的坩堝30可容納的矽熔體的容量也不同,則可以適應性的調整該延伸套筒的高度,有效的防止洩露的矽熔體流入該排氣口。Silicon melt leakage occurs at different stages, the volume of the leaked silicon melt is different, and the capacity of the silicon melt that can be accommodated by different crucibles 30 is also different, the height of the extension sleeve can be adjusted adaptively to effectively prevent leakage. The silicon melt flows into the exhaust port.

該可伸縮的套筒的具體的結構形式可以有多種,例如,該延伸套筒可以包括可伸縮設置的多個套設連接的子套筒。該延伸套筒還可以包括折疊壁,和伸縮桿,伸縮桿伸縮使得該折疊壁展開或者折疊,從而調節該延伸套筒的高度。The telescopic sleeve may have a variety of specific structural forms. For example, the extension sleeve may include a plurality of telescopically arranged sub-sleeves connected by sleeves. The extension sleeve may also include a folding wall and a telescopic rod. The telescopic rod telescopes to expand or fold the folding wall, thereby adjusting the height of the extension sleeve.

本實施例的一些實施方式中,該排氣管2的內壁上設置有減緩矽熔體流速的緩衝結構。In some implementations of this embodiment, the inner wall of the exhaust pipe 2 is provided with a buffer structure that slows down the flow rate of the silicon melt.

存在矽熔體流入該排氣管2時,通過該緩衝結構的設置減緩矽熔體的流速,並逐漸凝固,從而減小對排氣管2的損害。When the silicon melt flows into the exhaust pipe 2 , the buffer structure slows down the flow rate of the silicon melt and gradually solidifies, thereby reducing damage to the exhaust pipe 2 .

該緩衝結構的具體結構形式可以有多種,本實施例的一些實施方式中,該緩衝結構包括沿該排氣管2的延伸方向間隔且交錯設置於該排氣管2的內壁上的多個阻擋板60,多個該阻擋板60包括在該排氣管2的延伸方向上相鄰的第一擋板和第二擋板,該第一擋板在該排氣管2的延伸方向上的正投影,與該第二擋板在該排氣管2的延伸方向上的正投影部分重疊。The buffer structure may have a variety of specific structural forms. In some implementations of this embodiment, the buffer structure includes a plurality of buffer structures spaced apart along the extension direction of the exhaust pipe 2 and staggered on the inner wall of the exhaust pipe 2 . Baffle plates 60, a plurality of the baffle plates 60 include first baffle plates and second baffle plates adjacent in the extension direction of the exhaust pipe 2, the first baffle plate in the extension direction of the exhaust pipe 2 The orthographic projection partially overlaps with the orthographic projection of the second baffle in the extension direction of the exhaust pipe 2 .

多個該阻擋板60的設置,減緩的矽熔體的流速,延長了矽熔體的流動時間,從而使得矽熔體在流通過程中逐漸凝固,避免矽熔體進一步流入其他區域對其他部分造成損害。The arrangement of multiple blocking plates 60 slows down the flow rate of the silicon melt and prolongs the flow time of the silicon melt, thereby causing the silicon melt to gradually solidify during the circulation process and preventing the silicon melt from further flowing into other areas and causing damage to other parts. damage.

示例性的,該排氣管2包括靠近該排氣口的第一區域,該緩衝結構設置於該第一區域,最大限度的減小矽熔體對排氣管2等部件的損害。For example, the exhaust pipe 2 includes a first area close to the exhaust port, and the buffer structure is disposed in the first area to minimize damage to components such as the exhaust pipe 2 by the silicon melt.

本實施例的一些實施方式中,沿著該排氣管2的延伸方向,多個該阻擋板60呈螺旋狀環繞排布於該排氣管2的內壁上。In some implementations of this embodiment, along the extension direction of the exhaust pipe 2, a plurality of the baffle plates 60 are arranged in a spiral shape around the inner wall of the exhaust pipe 2.

矽熔體從該排氣口進入該排氣管2的位置並不一定是固定的,且排氣管2的截面是環形的,則為了有效的阻止矽熔體,使得多個該阻擋板60呈螺旋狀環繞排布於該排氣管2的內壁上。The position where the silicon melt enters the exhaust pipe 2 from the exhaust port is not necessarily fixed, and the cross-section of the exhaust pipe 2 is annular. In order to effectively prevent the silicon melt, multiple blocking plates 60 are provided. They are arranged in a spiral shape on the inner wall of the exhaust pipe 2 .

本實施例的一些實施方式中,該阻擋板60遠離該排氣管2內壁的一端向靠近該排氣口的方向傾斜延伸設置。In some implementations of this embodiment, the end of the baffle plate 60 away from the inner wall of the exhaust pipe 2 is inclined and extended in a direction close to the exhaust port.

傾斜設置的該阻擋板60,可以有效的延長矽熔體流入下一阻擋板60的時間,有效的減緩矽熔體的流速,縮短矽熔體流經該排氣管2的區域,有效的保護排氣管2等部件。The obliquely arranged blocking plate 60 can effectively extend the time for the silicon melt to flow into the next blocking plate 60, effectively slow down the flow rate of the silicon melt, shorten the area where the silicon melt flows through the exhaust pipe 2, and effectively protect Exhaust pipe 2 and other components.

本實施例的一些實施方式中,該爐體10的底部的中心穿設有坩堝軸40,該坩堝軸40遠離該爐體10的底部的一端固定有該坩堝30,該坩堝軸40上套設有防止該坩堝30洩露的矽熔體流入該爐體10的底部遠離該坩堝30的一側的第二防護結構70。In some implementations of this embodiment, a crucible shaft 40 is passed through the center of the bottom of the furnace body 10 , and the crucible 30 is fixed at one end of the crucible shaft 40 away from the bottom of the furnace body 10 . The crucible shaft 40 is sleeved with There is a second protective structure 70 on the side of the bottom of the furnace body 10 away from the crucible 30 to prevent the leaked silicon melt from the crucible 30 from flowing into the furnace body 10 .

若發生矽熔體洩露,部分矽熔體會流經該坩堝軸40,從經該坩堝軸40流入該爐體10底部遠離該坩堝30的一側的機械結構上(例如升降、旋轉等機械結構),並對其造成損害,該第二防護結構70的設置,防止矽熔體流入該爐體10底部遠離該坩堝30的一側,對位於該爐體10底部遠離該坩堝30的一側的機械結構起到保護作用。If the silicon melt leaks, part of the silicon melt will flow through the crucible shaft 40 and flow from the crucible shaft 40 into the mechanical structure on the side of the bottom of the furnace body 10 away from the crucible 30 (such as lifting, rotating, etc. mechanical structures) , and cause damage to it. The arrangement of the second protective structure 70 prevents the silicon melt from flowing into the side of the bottom of the furnace body 10 away from the crucible 30 and to the machinery located on the side of the bottom of the furnace body 10 away from the crucible 30 . The structure plays a protective role.

該第二防護結構70的具體結構形式可以有多種,本實施例的一些實施方式中,該第二防護結構70包括套設於該坩堝軸40的外側的防護套,該防護套包括靠近該爐體10的底部的第一部分和遠離該爐體10的底部的第二部分,該第二部分的內壁與該坩堝軸40緊密接觸,該第二部分的外壁為作為導向面的曲面結構,該第二部分遠離該第一部分的一端的端面的面積小於該第二部分靠近該第一部分的一端的端面的面積。The second protective structure 70 can have a variety of specific structural forms. In some implementations of this embodiment, the second protective structure 70 includes a protective sleeve set on the outside of the crucible shaft 40 , and the protective sleeve includes a protective sleeve close to the furnace. The first part of the bottom of the body 10 and the second part away from the bottom of the furnace body 10. The inner wall of the second part is in close contact with the crucible shaft 40. The outer wall of the second part is a curved surface structure serving as a guide surface. The area of the end surface of the second part away from the first part is smaller than the area of the end surface of the second part close to the first part.

該防護套的設置,使得洩露的矽熔體經由該導向面流向該坩堝軸40的週邊,避免洩露的矽熔體順著該坩堝軸40流入該爐體10底部遠離該坩堝30的一側。The protective sleeve is arranged so that the leaked silicon melt flows to the periphery of the crucible shaft 40 through the guide surface, and prevents the leaked silicon melt from flowing along the crucible shaft 40 into the side of the bottom of the furnace body 10 away from the crucible 30 .

本實施例中,該防護套與該坩堝軸40緊密接觸,以有效的將洩露的矽熔體導入該坩堝軸40的週邊。In this embodiment, the protective sleeve is in close contact with the crucible shaft 40 to effectively guide the leaked silicon melt into the periphery of the crucible shaft 40 .

示例性的,該防護套的第二部分在該坩堝軸40的延伸方向上的截面為對稱設置的三角形。For example, the cross section of the second part of the protective sleeve in the extending direction of the crucible shaft 40 is a symmetrically arranged triangle.

本實施例的一些實施方式中,該第一部分為可伸縮結構。In some implementations of this embodiment, the first part is a retractable structure.

該可伸縮結構的設置,可以調整該防護套的該第二部分與該坩堝軸40的相對位置關係,以更有效的防止洩露的矽熔體流入到該爐體10底部遠離該坩堝30的一側。The arrangement of the telescopic structure can adjust the relative positional relationship between the second part of the protective sleeve and the crucible shaft 40 to more effectively prevent the leaked silicon melt from flowing into the bottom of the furnace body 10 away from the crucible 30 side.

該可伸縮結構的具體結構形式可以有多種,例如,該第一部分包括伸縮桿。The telescopic structure may have various specific structural forms. For example, the first part includes a telescopic rod.

以上僅為本發明之較佳實施例,並非用來限定本發明之實施範圍,如果不脫離本發明之精神和範圍,對本發明進行修改或者等同替換,均應涵蓋在本發明申請專利範圍的保護範圍當中。The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.

2:排氣管 10:爐體 20:腔室 30:坩堝 40:坩堝軸 50:第一防護結構 51:凸緣 60:阻擋板 70:第二防護結構步驟 2:Exhaust pipe 10: Furnace body 20: Chamber 30:Crucible 40: Crucible shaft 50:First protective structure 51:Flange 60:Blocking plate 70: Second protective structure step

圖1表示相關技術中矽熔體洩露的狀態示意圖; 圖2表示本發明實施例中單晶爐的結構示意圖。 Figure 1 shows a schematic diagram of the state of silicon melt leakage in the related art; Figure 2 shows a schematic structural diagram of a single crystal furnace in an embodiment of the present invention.

2:排氣管 2:Exhaust pipe

10:爐體 10: Furnace body

20:腔室 20: Chamber

30:坩堝 30:Crucible

40:坩堝軸 40: Crucible shaft

50:第一防護結構 50:First protective structure

51:凸緣 51:Flange

60:阻擋板 60:Blocking plate

70:第二防護結構步驟 70: Second protective structure step

Claims (5)

一種單晶爐,包括爐體,該爐體限定的腔室內設置有坩堝,該爐體的底部設置有與排氣管連通的排氣口,該排氣口上設置有防止坩堝洩露的矽熔體進入該排氣口的第一防護結構;該第一防護結構包括套設於該排氣口上的延伸套筒;該延伸套筒為可伸縮的套筒;該排氣管的內壁上設置有減緩矽熔體流速的緩衝結構;該緩衝結構包括沿該排氣管的延伸方向間隔且交錯設置於該排氣管的內壁上的多個阻擋板,多個該阻擋板包括在該排氣管的延伸方向上相鄰的第一擋板和第二擋板,該第一擋板在該排氣管的延伸方向上的正投影,與該第二擋板在該排氣管的延伸方向上的正投影部分重疊;沿著該排氣管的延伸方向,多個該阻擋板呈螺旋狀環繞排布於該排氣管的內壁上;該阻擋板遠離該排氣管內壁的一端向靠近該排氣口的方向傾斜延伸設置。 A single crystal furnace includes a furnace body. A crucible is provided in a cavity defined by the furnace body. An exhaust port connected to an exhaust pipe is provided at the bottom of the furnace body. A silicon melt is provided on the exhaust port to prevent leakage of the crucible. Enter the first protective structure of the exhaust port; the first protective structure includes an extension sleeve sleeved on the exhaust port; the extension sleeve is a telescopic sleeve; the inner wall of the exhaust pipe is provided with A buffer structure that slows down the flow rate of the silicon melt; the buffer structure includes a plurality of baffle plates spaced along the extension direction of the exhaust pipe and staggered on the inner wall of the exhaust pipe, and the plurality of baffle plates are included in the exhaust pipe. The first baffle and the second baffle are adjacent in the extension direction of the exhaust pipe, the orthographic projection of the first baffle in the extension direction of the exhaust pipe, and the orthographic projection of the second baffle in the extension direction of the exhaust pipe. The orthographic projections on the exhaust pipe partially overlap; along the extension direction of the exhaust pipe, a plurality of the blocking plates are arranged in a spiral shape on the inner wall of the exhaust pipe; one end of the blocking plate is away from the inner wall of the exhaust pipe It is arranged to extend obliquely in the direction close to the exhaust port. 如請求項1所述之單晶爐,其中,該延伸套筒遠離該排氣口的一端設置有向外延伸的凸緣。 The single crystal furnace of claim 1, wherein an end of the extension sleeve away from the exhaust port is provided with an outwardly extending flange. 如請求項1所述之單晶爐,其中,該爐體的底部的中心穿設有坩堝軸,該坩堝軸遠離該爐體的底部的一端固定有該坩堝,該坩堝軸上套設有防止該坩堝洩露的矽熔體流入該爐體的底部遠離該坩堝的一側的第二防護結構。 The single crystal furnace as described in claim 1, wherein a crucible shaft is passed through the center of the bottom of the furnace body, and the crucible is fixed on one end of the crucible shaft away from the bottom of the furnace body, and a protective ring is set on the crucible shaft. The silicon melt leaked from the crucible flows into the second protective structure on the side of the bottom of the furnace body away from the crucible. 如請求項3所述之單晶爐,其中,該第二防護結構包括套設於該坩堝軸的外側的防護套,該防護套包括靠近該爐體的底部的第一部分和遠離該爐體的底部的第二部分,該第二部分的內壁與該坩堝軸緊密接觸,該第二部分的外壁為作為導向面的曲面結構,該第二部分遠離該第一部分的一端的端面的面積小於該第二部分靠近該第一部分的一端的端面的面積。 The single crystal furnace according to claim 3, wherein the second protective structure includes a protective sleeve placed on the outside of the crucible shaft, and the protective sleeve includes a first part close to the bottom of the furnace body and a first part away from the furnace body. The second part of the bottom, the inner wall of the second part is in close contact with the crucible shaft, the outer wall of the second part is a curved structure serving as a guide surface, and the area of the end surface of the second part away from the first part is smaller than the The area of the end surface of the second part adjacent to one end of the first part. 如請求項4所述之單晶爐,其中,該第一部分為可伸縮結構。 The single crystal furnace according to claim 4, wherein the first part is a retractable structure.
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