TWI812511B - Single crystal diameter control method and device, single crystal silicon crystal pulling furnace - Google Patents

Abstract

The invention provides a single crystal diameter control method and device, a single crystal silicon pulling furnace, and belongs to the field of semiconductor technology. The single crystal diameter control device includes: a diameter detection module for image sampling at the interface between the polycrystalline melt and the crystal to obtain an original image, and binarizing the original image to obtain a black and white image. Calculate the area ratio of the white area to the black area in the black and white image, and obtain the diameter data value of the crystal based on the area ratio; the control module is used to compare the diameter data value with the preset diameter data value, and based on the comparison The result controls the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater.

Description

Single crystal diameter control method and device, single crystal silica crystal pulling furnace

The invention belongs to the field of semiconductor technology, and in particular refers to a method and device for controlling the diameter of a single crystal, and a single crystal silicon pulling furnace.

As a semiconductor material, single crystal silicon is generally used to manufacture integrated circuits and other electronic components. In the process of preparing silicon single crystal, a seed crystal with a smaller diameter is immersed in a silicon melt, and a section of fine crystal with a smaller diameter is grown through seeding to expel dislocations to achieve the purpose of growing zero-dislocation crystals. Afterwards, the crystal will grow from fine crystals to the target diameter through the shoulder releasing process, and then the crystal of the required size will be obtained through equal diameter growth. Finally, through the finishing step, the crystal rod will be separated from the liquid surface to obtain a complete crystal.

The equal diameter process is an extremely critical step in the crystal growth process and is also the key to ensuring crystal quality and yield. The diameter of the crystal is the prerequisite to ensure the stability of crystal growth and the guarantee of product yield; the automatic crystal diameter control device is the key to ensuring automatic diameter control during the crystal growth process; currently, optical pyrometer sensors and charge-coupled devices are mainly used (Charge Coupled Device, CCD) optical camera is used to detect the crystal diameter. The former is widely used in complex thermal field structure systems because of its small lighting viewing angle and small interference from thermal field components. Crystal diameter The working principle of the automatic control device is to monitor the brightness value of the aperture generated during the crystal growth process through an optical sensor, and monitor the position of the sensor for diameter control; simply speaking, it controls the diameter through a fixed position (corresponding to the target diameter of the crystal). Corresponding) sensor monitoring to feed back information on changes in crystal diameter. However, in the actual production process, as the length of the crystal changes and the internal structure of the thermal field changes, the aperture signal value between the crystal and the liquid surface will change greatly. This is mainly due to the aperture brightness value collected by the sensor. In fact, the meniscus formed by surface tension at the intersection of the crystal and the liquid surface forms an aperture with a certain brightness due to the optical reflection of the melt and the inner wall of the quartz crucible or other thermal field components; within the monitoring range of the diameter monitoring sensor On the one hand, the change in the brightness value of the aperture is due to the fluctuation of the actual diameter; on the other hand, it is due to the change in the internal brightness of the light source - that is, the thermal field, which causes the change in the brightness value reflected by the meniscus; and, the light source - that is, the thermal field The main reason for the change in internal brightness is that during the actual growth process of the crystal, parameters such as the amount of remaining melt in the crucible, the exposed area of the inner wall of the crucible, the heater power, and the distance between the liquid level and the guide tube during the growth process will all change. As the crystal grows, the brightness value reflected to the sensor through the meniscus will also change greatly. In this case, it will greatly affect the diameter control of the equipment and ultimately affect the growth rate and product. Quality.

The technical problem to be solved by the present invention is to provide a single crystal diameter control method and device, and a single crystal silica pulling furnace, which can monitor the diameter of the crystal during the crystal generation process and ensure the stable controllability of the crystal quality.

In order to solve the above technical problems, embodiments of the present invention provide the following technical solutions: On the one hand, embodiments of the present invention provide a single crystal diameter control device for use in a single crystal silica pulling furnace. The single crystal silica pulling furnace includes a furnace body. The furnace body is provided with a crucible and a heater, and a furnace located above the crucible. Seed crystal pulling structure, the crucible is used to hold polycrystalline melt, the single crystal diameter control device includes: The diameter detection module is used to sample the image at the interface between the polycrystalline melt and the crystal, obtain the original image, perform binarization processing on the original image, obtain a black and white image, and calculate the The area ratio of the white area to the black area, and the diameter data value of the crystal is obtained based on this area ratio; The control module is used to compare the diameter data value with the preset diameter data value, and control the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater according to the comparison results.

In some embodiments, the control module is specifically used to increase the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater when the diameter data value is greater than the preset diameter data value; When the data value is less than the preset diameter data value, the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater is reduced.

In some embodiments, it also includes: A guide rail provided above the crucible; The diameter detection module is arranged on the guide rail and can move along the guide rail.

In some embodiments, the diameter detection module includes: a camera unit, used for image sampling at the interface between the polycrystalline melt and the crystal to obtain the original image; The calculation unit is used to binarize the original image to obtain a black and white image, and calculate the area ratio L of the white area to the black area in the black and white image, L=S1/S2, where S1 is the area of the white area. , S2 is the area of the black area; The correction unit is used to correct the area ratio using the correction coefficient to obtain the diameter data value.

Embodiments of the present invention also provide a single crystal silicon crystal pulling furnace, which includes a furnace body. The furnace body is provided with a crucible and a heater, and a seed crystal pulling structure located above the crucible. The crucible is used to contain polycrystalline melt. The liquid also includes a single crystal diameter control device as described above.

Embodiments of the present invention also provide a method for controlling the diameter of a single crystal, which is applied to a single crystal silica pulling furnace. The single crystal silica pulling furnace includes a furnace body with a crucible and a heater, and a furnace located above the crucible. The seed crystal pulling structure is used to hold the polycrystalline melt. The single crystal diameter control method includes: Image sampling is performed at the interface between the polycrystalline melt and the crystal to obtain the original image. The original image is binarized to obtain a black and white image. The area of the white area and the black area in the black and white image is calculated. Ratio, based on the area ratio, the diameter data value of the crystal is obtained; The diameter data value is compared with a preset diameter data value, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater is controlled according to the comparison result.

In some embodiments, the method specifically includes: When the diameter data value is greater than the preset diameter data value, increase the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater; when the diameter data value is less than the preset diameter data value, decrease The crystal pulling speed of the seed crystal pulling structure and/or the power of the heater.

In some embodiments, obtaining the diameter data value of the crystal based on the area ratio includes: Use the correction coefficient to correct the area ratio to obtain the diameter data value.

Embodiments of the present invention also provide a computer-readable storage medium. The computer-readable storage medium stores a computer program. When the computer program is executed by a processor, the steps of the single crystal diameter control method as described above are implemented.

Embodiments of the present invention have the following beneficial effects: In the above scheme, by monitoring the interface between the polycrystalline melt and the crystal, the diameter of the crystal during the crystal generation process can be monitored, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be adjusted in real time, so that The diameter of the crystal can reach the target diameter. This embodiment can ensure the authenticity of the crystal diameter obtained during the crystal growth process, ensure the stability of the crystal pulling speed, and improve the stability and controllability of the crystal quality.

In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.

In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" The orientations or positional relationships indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description. , rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be construed as a limitation of the present invention.

In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.

Embodiments of the present invention provide a method and device for controlling the diameter of a single crystal, and a single crystal silicon pulling furnace, which can monitor the diameter of the crystal during the crystal generation process and ensure stable controllability of the crystal quality.

Embodiments of the present invention provide a single crystal diameter control device for use in a single crystal silicon pulling furnace. The single crystal silicon pulling furnace includes a furnace body, as shown in Figure 1. The furnace body is provided with a crucible 30 and a heater (not shown). (shown), and a seed crystal pulling structure (not shown) located above the crucible 30. The crucible 30 is used to hold the polycrystalline melt 40. The single crystal diameter control device 10 includes: The diameter detection module is used to sample the image at the junction 60 of the polycrystalline melt 40 and the crystal 50 to obtain an original image, perform binarization processing on the original image to obtain a black and white image, and calculate the black and white image. The area ratio of the white area to the black area in the image, and the diameter data value of the crystal is obtained based on this area ratio; The control module is used to compare the diameter data value with the preset diameter data value, and control the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater according to the comparison result.

In this embodiment, by monitoring the interface between the polycrystalline melt and the crystal, the diameter of the crystal during the crystal generation process can be monitored, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be adjusted in real time. Allowing the diameter of the crystal to reach the target diameter, this embodiment can ensure the authenticity of the crystal diameter obtained during the crystal growth process, ensure the stability of the crystal pulling speed, and improve the stability and controllability of the crystal quality.

During the crystal pulling process, polycrystalline silicon is put into the crucible 30 and heated and melted to become a polycrystalline melt 40. A crystal with a specific crystal orientation is fixed at the lower end of the seed chuck structure. When pulling a single crystal silicon rod, first The crystal is welded to the polycrystalline melt and begins to enter the seeding stage; then by adjusting the temperature of the polycrystalline melt, the upward lifting speed of the crystal, etc., the single crystal silicon continues to grow through the shoulder-releasing stage and the shoulder-turning stage, and is finally drawn Single crystal silicon rod is produced. Among them, the flow guide tube 20 is used to separate the liquid surface temperature from the crystal rod's peripheral environment to ensure a suitable temperature gradient for crystal growth; the crucible 30 can be made of quartz or dock, and the inner wall is relatively smooth and has a certain light reflection. Function: The crystal edge 501 (including protruding crystal lines) of the grown crystal 50 is welded to the polycrystalline melt 40.

During the crystal growth process, at the junction 60 of the crystal 50 and the polycrystalline melt 40, the solid-liquid surface forms a meniscus structure due to the surface tension of the melt. Due to the latent heat of crystallization and the surrounding light environment, when viewed from a certain angle, the meniscus structure The moon surface structure will emit light with a brightness higher than that of the surrounding area, which is called an aperture. The diameter detection module performs image sampling on the junction 60 of the polycrystalline melt 40 and the crystal 50 , that is, image sampling of the aperture.

As shown in FIG. 2 , the single crystal diameter control device 10 includes a guide rail 102 disposed above the crucible. The diameter detection module 101 is disposed on the guide rail 102 and can move along the guide rail 102 .

In some embodiments, the diameter detection module includes: a camera unit, used for image sampling at the interface between the polycrystalline melt and the crystal to obtain the original image; The calculation unit is used to binarize the original image to obtain a black and white image, and calculate the area ratio L of the white area to the black area in the black and white image, L=S1/S2, where S1 is the area of the white area. , S2 is the area of the black area; The correction unit is used to correct the area ratio using the correction coefficient to obtain the diameter data value.

In this embodiment, the diameter detection module 101 is fixedly arranged on the guide rail 102 according to the target angle. The position of the diameter detection module 101 on the guide rail 102 can be determined according to the set target diameter of the crystal. The diameter detection module can be adjusted according to actual needs. Position of group 101 on rail 102. During the working process of the diameter detection module 101, the camera unit samples the aperture part, that is, the solid-liquid interface, to obtain the original image. Figure 3 is a schematic diagram of a crystal radial cross section (including edges and crystal lines) and a detection field of view according to an embodiment of the present invention, which includes crystal edges 501 and protruding crystal lines 502. As shown in Figure 4, the original image 1031 is an original image obtained within the detection field of view 103 of the diameter detection module 101. The original image 1031 is binarized, that is, a grayscale threshold is set, and the original image is The grayscale value of each primitive in image 1031 is compared with the grayscale threshold. If the grayscale value of the primitive is greater than or equal to the grayscale threshold, the primitive is adjusted to a white primitive. If the grayscale value of the primitive is If the gray-scale value is less than the gray-scale threshold, the primitive will be adjusted to a black primitive; or if the gray-scale value of the primitive is greater than the gray-scale threshold, the primitive will be adjusted to a white primitive. If the gray-scale value of the primitive If the grayscale value is less than or equal to the grayscale threshold, the primitive is adjusted to a black primitive, and a black and white image 1032 is obtained. Combined with the difference between black and white primitive points, the boundary of the black and white area is fitted. It can be seen that the black and white image in the detection field of view consists of black and white parts. Calculate the area ratio L of the white area to the black area, L=S1/S2, Among them, S1 is the area of the white area, S2 is the area of the black area, S1 represents the part occupied by the crystal in the detection field of view, S2 represents the part outside the crystal in the detection field of view, and L can reflect the diameter of the crystal. In this embodiment, by performing binary processing on the original image to obtain a black and white image, the data noise reduction function can be achieved and the interference of the crystal lines on the crystal surface on the detection results can be avoided.

In some embodiments, in order to reduce the amount of data processing, the background in the original image can be removed before binarizing the original image.

When the diameter detection module 101 is fixed at the set position of the guide rail 102 at a set angle, it is considered that at this position, the liquid level point detected by the diameter detection module 101 corresponds to the target diameter. Referring to the position shown in Figure 1, the detected The area ratio of the white area to the black area in the field of view is the standard value, recorded as L1. When the crystal diameter is larger, the white area in the detection field of view will increase. At this time, L>L1, conversely, L<L1. Since the decrease in the amount of melt and the change in ambient light in the thermal field caused by the change in the position of the crucible will interfere with the detection results, a correction coefficient can be introduced to correct the area ratio and obtain the diameter data value. For example, the coefficient α can be introduced to amplify L, and the diameter data value D=α , through coefficient correction, the interference on the detection results caused by changes in ambient light in the thermal field caused by the reduction in melt volume and changes in the position of the crucible can be minimized.

After obtaining the diameter data value, the crystal generation process can be controlled based on the diameter data value. In some embodiments, the control module is specifically used to increase the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater when the diameter data value is greater than the preset diameter data value; When the data value is less than the preset diameter data value, the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater is reduced.

When the diameter data value is greater than the preset diameter data value, it means that the actual diameter of the crystal is greater than the target diameter. The crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be increased to ensure that the actual diameter is consistent with the target diameter. The diameters are similar or equal; when the diameter data value is smaller than the preset diameter data value, it means that the actual diameter of the crystal is smaller than the target diameter, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be reduced. Ensure that the actual diameter is close to or equal to the target diameter.

Embodiments of the present invention also provide a single crystal silicon crystal pulling furnace, which includes a furnace body. The furnace body is provided with a crucible and a heater, and a seed crystal pulling structure located above the crucible. The crucible is used to contain polycrystalline melt. The liquid also includes a single crystal diameter control device as described above.

Embodiments of the present invention also provide a method for controlling the diameter of a single crystal, which is applied to a single crystal silica pulling furnace. The single crystal silica pulling furnace includes a furnace body with a crucible and a heater, and a furnace located above the crucible. Seed crystal pulling structure, the crucible is used to hold polycrystalline melt, as shown in Figure 5. The single crystal diameter control method includes: Step S01: Perform image sampling at the interface between the polycrystalline melt and the crystal to obtain an original image, perform binarization processing on the original image to obtain a black and white image, and calculate the difference between the white area and the black area in the black and white image. The area ratio of the region, based on which the diameter data value of the crystal is obtained; Step S02: Compare the diameter data value with the preset diameter data value, and control the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater according to the comparison result.

In this embodiment, by monitoring the interface between the polycrystalline melt and the crystal, the diameter of the crystal during the crystal generation process can be monitored, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be adjusted in real time. Allowing the diameter of the crystal to reach the target diameter, this embodiment can ensure the authenticity of the crystal diameter obtained during the crystal growth process, ensure the stability of the crystal pulling speed, and improve the stability and controllability of the crystal quality.

During the crystal pulling process, polycrystalline silicon is put into the crucible 30 and heated and melted to become a polycrystalline melt 40. A crystal with a specific crystal orientation is fixed at the lower end of the seed chuck structure. When pulling a single crystal silicon rod, first The crystal is welded to the polycrystalline melt and begins to enter the seeding stage; then by adjusting the temperature of the polycrystalline melt, the upward lifting speed of the crystal, etc., the single crystal silicon continues to grow through the shoulder-releasing stage and the shoulder-turning stage, and is finally drawn Single crystal silicon rod is produced. Among them, the flow guide tube 20 is used to separate the liquid surface temperature from the crystal rod's peripheral environment to ensure a suitable temperature gradient for crystal growth; the crucible 30 can be made of quartz or dock, and the inner wall is relatively smooth and has a certain light reflection. Function: The crystal edge 501 (including protruding crystal lines) of the grown crystal 50 is welded to the polycrystalline melt 40.

During the crystal growth process, at the junction 60 of the crystal 50 and the polycrystalline melt 40, the solid-liquid surface forms a meniscus structure due to the surface tension of the melt. Due to the latent heat of crystallization and the surrounding light environment, when viewed from a certain angle, the meniscus structure The moon surface structure will emit light with a brightness higher than that of the surrounding area, which is called an aperture. The diameter detection module performs image sampling on the junction 60 of the polycrystalline melt 40 and the crystal 50 , that is, image sampling of the aperture.

As shown in FIG. 2 , the single crystal diameter control device 10 includes a guide rail 102 disposed above the crucible. The diameter detection module 101 is disposed on the guide rail 102 and can move along the guide rail 102 .

In this embodiment, the diameter detection module 101 is fixedly arranged on the guide rail 102 according to the target angle. The position of the diameter detection module 101 on the guide rail 102 can be determined according to the set target diameter of the crystal. The diameter detection module can be adjusted according to actual needs. Position of group 101 on rail 102. During the working process of the diameter detection module 101, the camera unit samples the aperture part, that is, the solid-liquid interface, to obtain the original image. Figure 3 is a schematic diagram of a crystal radial cross section (including edges and crystal lines) and a detection field of view according to an embodiment of the present invention, which includes crystal edges 501 and protruding crystal lines 502. As shown in Figure 4, the original image 1031 is an original image obtained within the detection field of view 103 of the diameter detection module 101. The original image 1031 is binarized, that is, a grayscale threshold is set, and the original image is The grayscale value of each primitive in image 1031 is compared with the grayscale threshold. If the grayscale value of the primitive is greater than or equal to the grayscale threshold, the primitive is adjusted to a white primitive. If the grayscale value of the primitive is If the gray-scale value is less than the gray-scale threshold, the primitive will be adjusted to a black primitive; or if the gray-scale value of the primitive is greater than the gray-scale threshold, the primitive will be adjusted to a white primitive. If the gray-scale value of the primitive If the grayscale value is less than or equal to the grayscale threshold, the primitive is adjusted to a black primitive, and a black and white image 1032 is obtained. Combined with the difference between black and white primitive points, the boundary of the black and white area is fitted. It can be seen that the black and white image in the detection field of view consists of black and white parts. Calculate the area ratio L of the white area to the black area, L=S1/S2, Among them, S1 is the area of the white area, S2 is the area of the black area, S1 represents the part occupied by the crystal in the detection field of view, S2 represents the part outside the crystal in the detection field of view, and L can reflect the diameter of the crystal. In this embodiment, by performing binary processing on the original image to obtain a black and white image, the data noise reduction function can be achieved and the interference of the crystal lines on the crystal surface on the detection results can be avoided.

In some embodiments, in order to reduce the amount of data processing, the background in the original image can be removed before binarizing the original image.

When the diameter detection module 101 is fixed at the set position of the guide rail 102 at a set angle, it is considered that at this position, the liquid level point detected by the diameter detection module 101 corresponds to the target diameter. Referring to the position shown in Figure 1, the detected The area ratio of the white area to the black area in the field of view is the standard value, recorded as L1. When the crystal diameter is larger, the white area in the detection field of view will increase. At this time, L>L1, conversely, L<L1. Since the decrease in the amount of melt and the change in ambient light in the thermal field caused by the change in the position of the crucible will interfere with the detection results, a correction coefficient can be introduced to correct the area ratio and obtain the diameter data value. For example, the coefficient α can be introduced to amplify L, and the diameter data value D=α , through coefficient correction, the interference on the detection results caused by changes in ambient light in the thermal field caused by the reduction in melt volume and changes in the position of the crucible can be minimized.

After obtaining the diameter data value, the crystal generation process can be controlled based on the diameter data value. In some embodiments, the method specifically includes: When the diameter data value is greater than the preset diameter data value, increase the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater; when the diameter data value is less than the preset diameter data value, decrease The crystal pulling speed of the seed crystal pulling structure and/or the power of the heater.

When the diameter data value is greater than the preset diameter data value, it means that the actual diameter of the crystal is greater than the target diameter. The crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be increased to ensure that the actual diameter is consistent with the target diameter. The diameters are similar or equal; when the diameter data value is smaller than the preset diameter data value, it means that the actual diameter of the crystal is smaller than the target diameter, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater can be reduced. Ensure that the actual diameter is close to or equal to the target diameter.

Embodiments of the present invention also provide a computer-readable storage medium. The computer-readable storage medium stores a computer program. When the computer program is executed by a processor, the steps of the single crystal diameter control method as described above are implemented.

The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.

10:Single crystal diameter control device 20: guide tube 30:Crucible 40:Polycrystalline melt 50:Crystal 60:junction 101: Diameter detection module 102: Guide rail 103: Detection field of view 501: Crystal edge 502:Protruding crystal line 1031:Original image 1032: black and white image S01-S02: Steps

Figure 1 is a schematic diagram of crystal growth according to an embodiment of the present invention; Figure 2 is a schematic structural diagram of a single crystal diameter control device according to an embodiment of the present invention; Figure 3 is a schematic diagram of the radial cross section of the crystal (including edges and crystal lines) and the detection field of view according to the embodiment of the present invention; Figure 4 is a schematic diagram of processing images within the detection field of view according to an embodiment of the present invention; Figure 5 is a schematic flowchart of a single crystal diameter control method according to an embodiment of the present invention.

S01-S02: Steps

Claims (9)

A single crystal diameter control device applied to a single crystal silicon crystal pulling furnace. The single crystal silicon crystal pulling furnace includes a furnace body. The furnace body is provided with a crucible and a heater, and a seed crystal pulling structure located above the crucible. The crucible Used to hold polycrystalline melt, the single crystal diameter control device includes: The diameter detection module is used to sample the image at the interface between the polycrystalline melt and the crystal, obtain the original image, perform binarization processing on the original image, obtain a black and white image, and calculate the The area ratio of the white area to the black area, and the diameter data value of the crystal is obtained based on this area ratio; The control module is used to compare the diameter data value with the preset diameter data value, and control the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater according to the comparison results. The single crystal diameter control device as claimed in claim 1, wherein, The control module is specifically used to increase the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater when the diameter data value is greater than the preset diameter data value; when the diameter data value is less than the preset diameter data value, When the diameter data value is set, the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater is reduced. The single crystal diameter control device as described in claim 1 also includes: A guide rail provided above the crucible; The diameter detection module is arranged on the guide rail and can move along the guide rail. The single crystal diameter control device according to claim 1, wherein the diameter detection module includes: a camera unit, used for image sampling at the interface between the polycrystalline melt and the crystal to obtain the original image; The calculation unit is used to binarize the original image to obtain a black and white image, and calculate the area ratio L of the white area to the black area in the black and white image, L=S1/S2, where S1 is the area of the white area. , S2 is the area of the black area; The correction unit is used to correct the area ratio using the correction coefficient to obtain the diameter data value. A single crystal silicon crystal pulling furnace includes a furnace body, the furnace body is provided with a crucible and a heater, and a seed crystal pulling structure located above the crucible. The crucible is used to hold polycrystalline melt, and also includes claim 1 The single crystal diameter control device described in any one of 4 to 4. A single crystal diameter control method applied to a single crystal silicon crystal pulling furnace. The single crystal silicon crystal pulling furnace includes a furnace body. The furnace body is provided with a crucible and a heater, and a seed crystal pulling structure located above the crucible. The crucible Used to hold polycrystalline melt, the single crystal diameter control method includes: Image sampling is performed at the interface between the polycrystalline melt and the crystal to obtain the original image. The original image is binarized to obtain a black and white image. The area of the white area and the black area in the black and white image is calculated. Ratio, based on the area ratio, the diameter data value of the crystal is obtained; The diameter data value is compared with a preset diameter data value, and the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater is controlled according to the comparison result. The single crystal diameter control method as described in claim 6, the method specifically includes: When the diameter data value is greater than the preset diameter data value, increase the crystal pulling speed of the seed crystal pulling structure and/or the power of the heater; when the diameter data value is less than the preset diameter data value, decrease The crystal pulling speed of the seed crystal pulling structure and/or the power of the heater. The method for controlling the diameter of a single crystal as described in claim 6, wherein obtaining the diameter data value of the crystal based on the area ratio includes: Use the correction coefficient to correct the area ratio to obtain the diameter data value. A computer-readable storage medium. A computer program is stored on the computer-readable storage medium. When the computer program is executed by a processor, the steps of the single crystal diameter control method described in any one of claims 6 to 8 are implemented.